CN217182187U - Power module packaging structure - Google Patents
Power module packaging structure Download PDFInfo
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- CN217182187U CN217182187U CN202220650062.7U CN202220650062U CN217182187U CN 217182187 U CN217182187 U CN 217182187U CN 202220650062 U CN202220650062 U CN 202220650062U CN 217182187 U CN217182187 U CN 217182187U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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Abstract
The application provides a power module packaging structure which comprises a shell and a power module main body packaged in the shell, wherein the power module main body comprises a power terminal, a signal terminal, a copper bottom plate and a DBC substrate assembly arranged on the copper bottom plate; the DBC substrate assembly comprises a first DBC substrate arranged on the copper base plate and a second DBC substrate arranged on one side, back to the copper base plate, of the first DBC substrate; a diode chip and a power chip are arranged on the surface, facing the second DBC substrate, of the first DBC substrate, the first DBC substrate comprises a printed circuit, the diode chip and the power chip are electrically connected with the printed circuit, and the printed circuit is electrically connected with the signal terminal through a bonding wire; and molybdenum sheets are arranged on the surfaces of the diode chip and the power chip facing the second DBC substrate and are used for electrically connecting the power terminal and the signal terminal. The power module has solved current and can produce a large amount of heats at heavy current during operation, influences the problem that its current-carrying capacity promotes.
Description
Technical Field
The present disclosure relates to electronic devices, and particularly to a power module package structure.
Background
A power module is a power driver that combines power electronics and integrated circuit technology. The intelligent power module gains a bigger and bigger market due to the advantages of high integration level, high reliability and the like, is particularly suitable for frequency converters of driving motors and various inverter power supplies, and is a common power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances.
For a wide bandgap semiconductor power device, the size of the wide bandgap semiconductor power device is greatly reduced compared to other types of power semiconductor devices, and in order to increase the power density of the wide bandgap semiconductor power device to meet the application requirements of the wide bandgap semiconductor power device, the current carrying capacity of the wide bandgap semiconductor power device needs to be increased. At present, a power module is connected with a power terminal by a bonding wire, and because the sectional area of the bonding wire is small, a large amount of heat can be generated during large-current work, so that the temperature of the bonding wire is high, and the further improvement of the working current of the power module is influenced.
SUMMERY OF THE UTILITY MODEL
The embodiment of the application provides a power module packaging structure, has solved current power module and can produce a large amount of heats when heavy current work, influences the problem that its current-carrying capacity promotes.
The utility model discloses a power module packaging structure, which comprises a shell and a power module main body packaged in the shell, wherein the power module main body comprises a power terminal, a signal terminal, a copper bottom plate and a DBC substrate component arranged on the copper bottom plate; the DBC substrate assembly comprises a first DBC substrate arranged on the copper base plate and a second DBC substrate arranged on one side, back to the copper base plate, of the first DBC substrate; a diode chip and a power chip are arranged on the surface, facing the second DBC substrate, of the first DBC substrate, the first DBC substrate comprises a printed circuit, the diode chip and the power chip are both electrically connected with the printed circuit, and the printed circuit is electrically connected with the signal terminal through a bonding wire; and molybdenum sheets are arranged on the surfaces of the diode chip and the power chip facing the second DBC substrate and are used for electrically connecting the power terminal and the signal terminal.
According to the power module packaging structure provided by the embodiment of the application, the diode chip and the power chip are arranged between the first DBC substrate and the second DBC substrate, and the molybdenum sheet is connected on the diode chip and the power chip, because the first DBC substrate is provided with the etched printed circuit, the diode chip and the power chip can be directly and electrically connected with the printed circuit, and then the printed circuit is electrically connected with the signal terminal through the bonding wire, the molybdenum sheet is used for connecting the power terminal and the signal terminal, compared with the traditional method that the diode chip and the power chip are connected with the signal terminal and the power terminal through the bonding wire, the application greatly reduces the using amount of the bonding wire, and the sectional area of the molybdenum sheet is larger than that of the bonding wire, therefore, the heat generated by the bonding wire and the molybdenum sheet in the high-current work is greatly reduced, and the current carrying capacity of the power module is favorably improved, thereby increasing the power density of the power module.
In one embodiment, a surface of the DBC substrate assembly on a side away from the copper base plate is provided with a heat sink.
In one embodiment, the first DBC substrate includes a first ceramic board, a copper layer provided at one side of the first ceramic board, and the printed circuit provided at the other side of the first ceramic board;
the copper layer and the copper bottom plate are welded through welding flux;
the diode chip is welded on the printed circuit through solder, the surface of the power chip with the source electrode is welded on the printed circuit through solder, and the gate level and the emitter electrode of the power chip are electrically connected with the printed circuit through bonding wires.
In one embodiment, the molybdenum sheets are respectively welded with the diode chip and the power chip through solders;
and the molybdenum sheet and the second DBC substrate are welded through a solder.
In one embodiment, the copper base plate is rectangular, and the power terminal and the signal terminal are both located on two sides of the copper base plate in the width direction;
the power chip is close to the power terminal and the signal terminal relative to the diode chip;
the molybdenum sheet welded with the power chip extends towards the power terminal and the signal terminal in an arc shape.
In one embodiment, the sum of the thicknesses of the diode chip and the molybdenum sheet soldered on the diode chip is equal to the sum of the thicknesses of the power chip and the molybdenum sheet soldered on the power chip.
In one embodiment, the top of the shell is provided with a first mounting hole and a second mounting hole;
the top of the power terminal passes through the first mounting hole and extends to the outside of the housing, and the top of the signal terminal passes through the second mounting hole and extends to the outside of the housing.
In one embodiment, a convex block protruding upwards is arranged on the top of the shell at a position corresponding to the second mounting hole;
the lug is provided with a through hole communicated with the second mounting hole along the protruding direction, and the top of the signal terminal penetrates through the through hole.
In one embodiment, the solder is a solder paste, a silver paste or nano silver.
In one embodiment, the solder is 10 microns thick.
In one embodiment, the power module body is a wide bandgap three-phase full-bridge power module.
The application provides a power module packaging structure's beneficial effect lies in: compared with the prior art, the diode chip and the power chip are arranged between the first DBC substrate and the second DBC substrate, so that the diode chip and the power chip can be directly and electrically connected with the printed circuit of the first DBC substrate, then the printed circuit is electrically connected with the signal terminal through the bonding wire, meanwhile, the diode chip and the power chip are also connected with the molybdenum sheet, and the molybdenum sheet is used for connecting the power terminal and the signal terminal, so that the electrical connection between the diode chip and the power terminal and the signal terminal are respectively realized, compared with the traditional method that the diode chip and the power chip are electrically connected with the signal terminal and the power terminal through the bonding wire, the number of the used bonding wires is greatly reduced, and the sectional area of the molybdenum sheet is larger than that of the bonding wire, therefore, the heat generated by the bonding wire and the molybdenum sheet in the large-current work is greatly reduced, the current carrying capacity of the power module is improved, and therefore the power density of the power module is improved.
Drawings
Fig. 1 is a schematic overall structure diagram of a power module package structure provided in an embodiment of the present application;
fig. 2 is a schematic structural diagram of a power module package structure provided in an embodiment of the present application without a heat sink;
fig. 3 is a schematic diagram illustrating arrangement positions of a diode chip and a power chip in a power module package structure provided in an embodiment of the present application;
fig. 4 is a schematic structural diagram of a power module main body in a power module package structure provided in an embodiment of the present application;
fig. 5 is a schematic structural diagram of a DBC substrate assembly in a power module package structure provided in an embodiment of the present application;
fig. 6 is a schematic structural diagram of a first DBC substrate of the DBC substrate assembly;
FIG. 7 is a top view of FIG. 6;
FIG. 8 is a bottom view of FIG. 6;
fig. 9 is a schematic structural view of a second DBC substrate of the DBC substrate assembly;
FIG. 10 is a top view of FIG. 9;
FIG. 11 is a bottom view of FIG. 9;
fig. 12 is a schematic structural diagram of a copper backplane in a power module package structure provided in an embodiment of the present application;
fig. 13 is a schematic structural diagram of a heat sink in a power module package structure provided in an embodiment of the present application;
fig. 14 is a schematic structural diagram of a housing in a power module package structure provided in an embodiment of the present application;
fig. 15 is a schematic circuit diagram of a power module provided in an embodiment of the present application, where the power module body is a three-phase full-bridge power module.
Reference numerals: 1. a housing; 2. a power module main body;
10. a power terminal; 20. a signal terminal;
30. a copper base plate;
40. a DBC substrate assembly; 41. a first DBC substrate; 411. a first ceramic plate; 42. a second DBC substrate; 421. a second ceramic plate;
51. a diode chip; 52. a power chip;
60. a molybdenum sheet;
70. a heat sink;
101. a first mounting hole; 102. a second mounting hole; 103. and (4) a bump.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings that is solely for the purpose of facilitating the description and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be considered as limiting the present application.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
It should be noted that the same reference numerals are used to denote the same components or parts in the embodiments of the present application, and for the same parts in the embodiments of the present application, only one of the parts or parts may be given the reference numeral, and it should be understood that the reference numerals are also applicable to the other same parts or parts.
The embodiment of the application provides a power module packaging structure, has solved current power module and can produce a large amount of heats when heavy current work, influences the problem that its current-carrying capacity promotes.
Referring to fig. 2, the power module package structure provided in the embodiment of the present application includes a housing 1 and a power module main body 2 packaged in the housing 1, where the power module main body 2 includes a power terminal 10, a signal terminal 20, a copper base plate 30, and a DBC substrate assembly 40 disposed on the copper base plate 30; the DBC substrate assembly 40 includes a first DBC substrate 41 disposed on the copper base plate 30 and a second DBC substrate 42 disposed on a side of the first DBC substrate 41 opposite to the copper base plate 30; a diode chip 51 and a power chip 52 are arranged on the surface of the first DBC substrate 41 facing the second DBC substrate 42, the first DBC substrate 41 includes a printed circuit, the diode chip 51 and the power chip 52 are both electrically connected to the printed circuit, and the printed circuit is electrically connected to the signal terminal 20 through a bonding wire; the surfaces of the diode chip 51 and the power chip 52 facing the second DBC substrate 42 are each provided with a molybdenum sheet 60, and the molybdenum sheets 60 are used to electrically connect the power terminals 10 and the signal terminals 20.
It can be understood that the power module is formed by combining power electronic devices according to certain functions and then encapsulating the power electronic devices into a module. The DBC substrate is a Copper-clad ceramic substrate (Direct Bonding coater), which is called a ceramic Copper clad laminate (Centrotherm DBC) for short, and the ceramic Copper clad laminate has the characteristics of high heat conduction, high electrical insulation, high mechanical strength, low expansion and the like of ceramic, has the high conductivity and excellent welding performance of oxygen-free Copper, and can be etched into various patterns like a PCB (printed circuit board).
The printed circuit is etched on the first DBC substrate 41, the diode chip 51 and the power chip 52 are attached to the printed circuit, so that the electrical connection between the diode chip 51 and the power chip 52 and the printed circuit can be realized, and then the printed circuit is electrically connected with the signal terminal 20 through the bonding wire.
Because the first DBC substrate 41 and the second DBC substrate 42 have high thermal conductivity, the diode chip 51 and the power chip 52 are disposed between the first DBC substrate 41 and the second DBC substrate 42, so that heat generated by the operation of the diode chip 51 and the power chip 52 can be dissipated, which is beneficial to rapidly reducing the temperature of the power module and improving the power density of the power module.
Specifically, the diode chip 51 adopted in the embodiment of the present application is an autonomous diode chip, the volume of which is 10.60mm × 6.20mm × 0.22mm, and the power chip 52 is a power MOSFET chip.
It should be noted that, in the embodiment of the present application, the housing 1 encloses the power module body around the power module body, so that there is no obstacle to influence the heat dissipation of the first DBC substrate 41 and the second DBC substrate 42, so that the heat dissipation effect of the first DBC substrate 41 and the second DBC substrate 42 is better, and the temperature of the power module can be rapidly reduced.
The bonding wire used in the embodiment of the present application is a core material for semiconductor packaging, a component for connecting a pin and a silicon wafer and transmitting an electrical signal, and an indispensable core material in semiconductor production. Is a super wire with the diameter of only 1/4 microns, and the production of a bonding wire needs high-strength ultra-precision and high-temperature resistant technical capability.
According to the power module package structure provided by the embodiment of the present application, the diode chip 51 and the power chip 52 are disposed between the first DBC substrate 41 and the second DBC substrate 42, and the molybdenum sheet 60 is connected on the diode chip 51 and the power chip 52, because the first DBC substrate 41 has a printed circuit etched, the diode chip 51 and the power chip 52 can be directly electrically connected to the printed circuit, and then the printed circuit is electrically connected to the signal terminal 20 through the bonding wire, the molybdenum sheet 60 is used for connecting the power terminal 10 and the signal terminal 20, compared with the conventional diode chip 51 and the conventional power chip 52 which are connected to the signal terminal 20 and the power terminal 10 through the bonding wire, the present application greatly reduces the number of bonding wires used, and the cross-sectional area of the molybdenum sheet 60 is larger than that of the bonding wire, so that the heat generated by the bonding wire and the molybdenum sheet 60 during the large current operation is greatly reduced, the current carrying capacity of the power module is improved, and therefore the power density of the power module is improved.
In other embodiments, referring to fig. 1, a side surface of the DBC substrate assembly 40 away from the copper base plate 30 is provided with a heat sink 70. That is, a new heat dissipation channel is created above the power module body, and the heat dissipated by the diode chip 51 and the power chip 52 is directly transferred to the heat dissipation member 70 for heat dissipation, so that the heat dissipated by the diode chip 51 and the power chip 52 has two heat dissipation channels, one of which is heat dissipation through the first DBC substrate 41, and the other is heat dissipation through the diode chip 51 and the power chip 52 to the second DBC substrate 42, and is dissipated through the heat dissipation member 70, and the heat dissipation is performed from the upper direction and the lower direction respectively, thereby greatly increasing the heat dissipation capability of the power module body and improving the power density of the power module.
The heat sink 70 may be a water-cooled plate or a heat sink plate having a plurality of heat dissipation fins, which is not limited in the embodiments of the present application. In order to make the heat dissipation effect of the heat dissipation member 70 better, the heat dissipation member 70 needs to be attached to the surface of the side of the DBC substrate assembly 40 away from the copper base plate 30 as close as possible, and meanwhile, the heat dissipation surface of the heat dissipation member 70 needs to be larger as possible, so that a layer of copper plate can be arranged on the surface of the side of the DBC substrate assembly 40 away from the copper base plate 30, the DBC substrate assembly 40 is completely covered by the copper plate, and then the heat dissipation member 70 is attached to the copper plate, wherein the surface area of the side of the heat dissipation member 70 away from the copper plate is larger than the surface area of the heat dissipation member 70 attached to the copper plate, so that the heat dissipation area can be increased, and the heat dissipation effect is better.
Referring to fig. 13, fig. 13 is a schematic structural diagram of a heat sink 70 being a water-cooled plate (cold plate), which is a component that exchanges heat through liquid cooling, and the principle is to form a flow channel in a metal plate, mount an electronic component on the surface of the plate (coating a heat-conducting medium in the middle), and take away heat generated by the component by a cooling liquid entering from an inlet and exiting from an outlet of the plate. The whole plate thickness of water-cooling board is little, and heat transfer rate is fast, can effectual reduction radiating element 70's volume and improve the radiating efficiency.
In one embodiment, referring to fig. 6-8, the first DBC substrate 41 includes a first ceramic board 411, a copper layer disposed on one side of the first ceramic board 411, and a printed circuit disposed on the other side of the first ceramic board 411; the copper layer is welded with the copper bottom plate 30 through welding flux; the diode chip 51 is soldered to the printed circuit by solder, the surface of the power chip 52 having the source is soldered to the printed circuit by solder, and the gate and the emitter of the power chip 52 are electrically connected to the printed circuit by bonding wires.
It should be noted that the diode chip 51 is soldered to the printed circuit by solder to achieve electrical connection with the printed circuit, while the power chip 52 is soldered to the printed circuit by solder to achieve electrical connection between the source and the printed circuit, for the gate and the emitter of the power chip 52, bonding wires are needed to connect the gate and the emitter to the printed circuit, although bonding wires are used here, the number of bonding wires is greatly reduced compared with the number of bonding wires used for connecting the conventional power chip 52 to the signal terminal 20, and the reduction of bonding wires can also reduce the soldering workload and also reduce the wiring difficulty.
The copper layer formed on one side of the first ceramic plate 411 and the printed circuit formed on the other side of the first ceramic plate 411 are etched and printed by using a copper material, referring to fig. 8, the copper layer formed on one side of the first ceramic plate 411 is a monolithic copper layer 5F, referring to fig. 7, the printed circuit formed on the other side of the first ceramic plate 411 includes four printed copper layers spaced apart from each other, 1F to 4F.
The solder can be solder paste, silver paste or nano silver, and the thickness of the solder can be set to 10 microns, so that the electrical connection between the diode chip 51 and the printed circuit can be ensured, the source electrode of the power chip 52 is electrically connected with the printed circuit, the solder with the thickness of 10 microns can enable the firm degree of welding to be higher, and the welding between the diode chip 51 and the printed circuit and the welding between the source electrode of the power chip 52 and the printed circuit are prevented from being broken to influence the conductivity of the circuit formed by electrical connection.
In one embodiment, the molybdenum sheet 60 is optionally soldered to the diode chip 51 and the power chip 52 by solder; the molybdenum sheet 60 is soldered to the second DBC substrate 42 by means of solder.
It should be noted that, the molybdenum sheet 60 is respectively welded with the diode chip 51 and the power chip 52 through the solder, so that the molybdenum sheet 60 is electrically connected with the diode chip 51, and the molybdenum sheet 60 is also electrically connected with the power chip 52, so that when the molybdenum sheet 60 is connected with the power terminal 10, it is equivalent to the connection between the power chip 52 and the diode chip 51 and the power terminal 10, and when the molybdenum sheet 60 is connected with the signal terminal 20, it is equivalent to the connection between the power chip 52 and the diode chip 51 and the signal terminal 20, so that the connection between the power chip 52, the signal terminal 20 and the power terminal 10 is realized through the molybdenum sheet 60, and here, the molybdenum sheet 60 is used to replace the bonding wire, because the cross-sectional area of the molybdenum sheet 60 is larger than that of the bonding wire, the heat generated by the molybdenum sheet 60 during the large-current operation is much smaller than that generated by the bonding wire during the large-current operation, this can reduce the heat generated by the entire power module body.
The molybdenum sheet 60 and the second DBC substrate 42 are soldered by solder, wherein, referring to fig. 9-11, the second DBC substrate 42 includes a second ceramic plate 421, an etching pattern disposed on a side of the second ceramic plate 421 close to the molybdenum sheet 60, and a copper layer disposed on a side of the second ceramic plate 421 away from the molybdenum sheet 60, the molybdenum sheet 60 and the etching pattern on the second ceramic plate 421 are soldered correspondingly, so that the power chip 52 and the diode chip 51 corresponding to the molybdenum sheet 60 are electrically connected to the etching pattern on the second ceramic plate 421, and based on this, the power chip 52 is electrically connected to the printed circuit on the first ceramic plate 411 and the etching pattern on the second ceramic plate 421, and then connected to the signal terminal 20 or the power terminal 10 through the molybdenum sheet 60, so that many bonding wires can be omitted, and the overall heat of the power module body can be reduced. The etching pattern of the side, close to the molybdenum plate 60, of the second ceramic plate 421 and the copper layer, far from the molybdenum plate 60, of the second ceramic plate 421 are all etched and printed by using a copper material, referring to fig. 11, the copper layer, far from the molybdenum plate 60, of the second ceramic plate 421 is a whole copper layer 6F, referring to fig. 10, the etching pattern of the side, close to the molybdenum plate 60, of the second ceramic plate 421 includes three printed copper layers distributed at intervals, which are 7F to 9F respectively.
The solder can be solder paste, silver paste or nano silver, and the thickness of the solder can be set to 10 microns, so that the diode chip 51 and the power chip 52 can be respectively electrically connected with the molybdenum sheet 60, the molybdenum sheet 60 is electrically connected with the second DBC substrate 42, and the solder with the thickness of 10 microns can ensure that the welding firmness is higher, so that the molybdenum sheet 60 is prevented from loosening to influence the conductivity of a circuit formed by electrical connection.
In one embodiment, referring to fig. 4-5, the copper base plate 30 is rectangular, and the power terminal 10 and the signal terminal 20 are located on both sides of the copper base plate 30 in the width direction; the power chip 52 is close to the power terminal 10 and the signal terminal 20 with respect to the diode chip 51; the molybdenum sheet 60 welded to the power chip 52 extends in an arc shape toward the power terminal 10 and the signal terminal 20.
It should be noted that the molybdenum sheet 60 can replace the bonding wire to complete the electrical connection between the chip and the power terminal 10 and the signal terminal 20, so the molybdenum sheet 60 near the power terminal 10 and the signal terminal 20 can be made into an extended shape, and the extended molybdenum sheet 60 can be used as a lead, which is convenient for connecting the power terminal 10 and the signal terminal 20, on the one hand, and can also reduce the manufacturing material of the molybdenum sheet 60, thereby reducing the cost.
Referring to fig. 12, fig. 12 is a schematic view of the copper backplane 30 being rectangular.
In other embodiments, optionally, the sum of the thicknesses of the diode chip 51 and the molybdenum sheet 60 soldered on the diode chip 51 is equal to the sum of the thicknesses of the power chip 52 and the molybdenum sheet 60 soldered on the power chip 52.
It should be noted that, in practical use, different types of the power chip 52 and the diode chip 51 may be selected according to different requirements, the thickness of the power chip 52 and the thickness of the diode chip 51 may be the same, or may be different, when the thickness of the power chip 52 and the thickness of the diode chip 51 are the same, the molybdenum sheet 60 soldered on the power chip 52 and the molybdenum sheet 60 soldered on the diode chip 51 are set to be the same, and when the thickness of the power chip 52 and the thickness of the diode chip 51 are different, the molybdenum sheet 60 soldered on the power chip 52 and the molybdenum sheet 60 soldered on the diode chip 51 are set to be different, so that the sum of the thicknesses of the power chip 52 and the molybdenum sheet 60 soldered thereon is equal to the sum of the thicknesses of the diode chip 51 and the molybdenum sheet 60 soldered thereon, so that the difference in thickness between the diode chip 51 and the power chip 52 can be well compensated by the molybdenum sheet 60, the second DBC substrate 42 can be arranged more smoothly, remaining parallel to the first DBC substrate 41.
For example, when the thickness of the diode chip 51 is greater than that of the power chip 52, the thickness of the molybdenum sheet 60 soldered on the diode chip 51 is less than that of the molybdenum sheet 60 soldered on the power chip 52, and specifically, when the thickness of the diode chip 51 is 0.13 mm greater than that of the power chip 52, the thickness of the molybdenum sheet 60 soldered on the diode chip 51 is 0.50 mm, and the thickness of the molybdenum sheet 60 soldered on the power chip 52 is 0.63 mm.
In one embodiment, referring to fig. 14, the top of the housing 1 is opened with a first mounting hole 101 and a second mounting hole 102; the top of the power terminal 10 passes through the first mounting hole 101 and extends to the outside of the housing 1, and the top of the signal terminal 20 passes through the second mounting hole 102 and extends to the outside of the housing 1.
When the power module body is packaged in the casing 1, the power terminal 10 and the signal terminal 20 are packaged and fixed on the casing 1, the first mounting hole 101 and the second mounting hole 102 are formed in the top of the casing 1, so that the power terminal 10 and the signal terminal 20 respectively penetrate through the first mounting hole 101 and the second mounting hole 102 and extend to the outer side of the casing 1 during packaging, and the signal terminal 20 and the power terminal 10 of the packaged power module can be leaked outside for connecting lines.
Since the power module generates a large amount of heat during operation, the housing 1 for packaging the power module needs to be made of a material (such as PA6T) with a thermal deformation temperature above 300 ℃, so as to meet the requirement of double-sided heat dissipation of the power module.
Further, referring to fig. 14, a projection 103 protruding upward may be provided at a position corresponding to the second mounting hole 102 on the top of the housing 1; and the bump 103 is provided with a through-hole communicating with the second mounting hole 102 in the protruding direction, through which the top of the signal terminal 20 passes. The signal terminal 20 in the embodiment of the application is a sheet structure, so that in order to prevent the signal terminal 20 from being bent by an external force in the using process to affect normal use, the bump 103 may be provided, the signal terminal 20 penetrates through the second mounting hole 102 and then penetrates into the through hole of the bump 103, so that the bump 103 is equivalent to playing a certain supporting role for the signal terminal 20, the length of the signal terminal 20 which leaks outside is shortened, the signal terminal 20 is not easily bent, and the normal use of the signal terminal 20 is not affected.
In other embodiments, optionally, the power module main body 2 may be a wide bandgap three-phase full-bridge power module, and the single-bridge arm is formed by connecting two MOSFETs and two diodes in anti-parallel, and has 12 MOSFETs and 12 diodes in total, referring to fig. 15, fig. 15 is a schematic circuit diagram of the three-phase full-bridge power module.
Specifically, referring to fig. 3, the wide bandgap three-phase full-bridge power module includes five power terminals 10, which are a No. 1 power terminal 1T, a No. 2 power terminal 2T, a No. 3 power terminal 3T, a No. 4 power terminal 4T, and a No. 5 power terminal 5T; there are 15 signal terminals 20, which are No. 1 signal terminal 1P, No. 2 signal terminal 2P, No. 3 signal terminal 3P, No. 4 signal terminal 4P, No. 5 signal terminal 5P, No. 6 signal terminal 6P, No. 7 signal terminal 7P, No. 8 signal terminal 8P, No. 9 signal terminal 9P, No. 10 signal terminal 10P, No. 11 signal terminal 11P, No. 12 signal terminal 12P, No. 13 signal terminal 13P, No. 14 signal terminal 14P, No. 15 signal terminal 15P, respectively; 3 first DBC substrates 41 and 3 second DBC substrates 42 are provided, and 12 power chips 52 are provided, wherein the number of the power chips is 1M-12M; the number of the diode chips 51 is 12, and is 1S to 12S.
On a rectangular copper base plate 30, one long side is provided with 3 power terminals 10 and 8 signal terminals 20, the other long side is provided with two power terminals 10 and 7 signal terminals 20, 3 first DBC substrates 41 are arranged in parallel in the length direction of the copper base plate 30, two power chips 52 are respectively arranged on two sides of each first DBC substrate 41 along the width direction of the copper base plate 30, 4 diode chips 51 are arranged in the middle, the gate and emitter of each power chip 52 need to be connected with the first DBC substrate 41 by a bonding wire, and the first DBC substrate 41 and the signal terminals 20 need to be connected by a bonding wire, so that the wide-bandgap three-phase power module totally adopts 18 full-bridge bonding wires, as shown in fig. 3, which are respectively 1W to 18W.
Wherein the second DBC substrate 42 on the left in fig. 2 and its corresponding first DBC substrate 41 correspond to Q3 and Q6 in fig. 15; the middle second DBC substrate 42 and its corresponding first DBC substrate 41 correspond to Q2 and Q5 in fig. 15; the second DBC substrate 42 on the right corresponds to Q1 and Q4 in fig. 15 with its corresponding first DBC substrate 41. 7W, 8W, 9W, 14P in FIG. 3 correspond to the Q1 switch in FIG. 15; 4W, 5W, 6W and 12P correspond to Q2 switches; 1W, 2W, 3W and 11P correspond to Q3 switches; 16W, 17W, 18W and 7P correspond to Q4 switches; the 13W, 14W, 15W and 5P correspond to Q5 switches; 10W, 11W, 12W, 1P correspond to Q6 switches.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (11)
1. A power module package structure includes a casing (1) and a power module main body (2) packaged in the casing (1),
the power module main body (2) comprises a power terminal (10), a signal terminal (20), a copper bottom plate (30) and a DBC substrate assembly (40) arranged on the copper bottom plate (30);
the DBC substrate assembly (40) comprises a first DBC substrate (41) arranged on the copper base plate (30) and a second DBC substrate (42) arranged on one side, opposite to the copper base plate (30), of the first DBC substrate (41);
the surface of the first DBC substrate (41) facing the second DBC substrate (42) is provided with a diode chip (51) and a power chip (52), the first DBC substrate (41) comprises a printed circuit, the diode chip (51) and the power chip (52) are both electrically connected with the printed circuit, and the printed circuit is electrically connected with the signal terminal (20) through a bonding wire;
the surfaces of the diode chip (51) and the power chip (52) facing the second DBC substrate (42) are respectively provided with a molybdenum sheet (60), and the molybdenum sheets (60) are used for electrically connecting the power terminal (10) and the signal terminal (20).
2. The power module package structure of claim 1,
and a heat dissipation piece (70) is arranged on the surface of one side, away from the copper base plate (30), of the DBC substrate assembly (40).
3. The power module package structure of claim 2,
the first DBC substrate (41) comprises a first ceramic board (411), a copper layer provided on one side of the first ceramic board (411), and the printed circuit provided on the other side of the first ceramic board (411);
the copper layer and the copper bottom plate (30) are welded through welding materials;
the diode chip (51) is soldered to the printed circuit by solder, the surface of the power chip (52) with the source electrode is soldered to the printed circuit by solder, and the gate and the emitter of the power chip (52) are both electrically connected with the printed circuit by bonding wires.
4. The power module package structure of claim 3,
the molybdenum sheet (60) is respectively welded with the diode chip (51) and the power chip (52) through welding materials;
the molybdenum sheet (60) and the second DBC substrate (42) are welded through a solder.
5. The power module package structure of claim 4,
the copper bottom plate (30) is rectangular, and the power terminal (10) and the signal terminal (20) are positioned on two sides of the copper bottom plate (30) in the width direction;
said power chip (52) being close to said power terminal (10) and said signal terminal (20) with respect to said diode chip (51);
the molybdenum sheet (60) welded with the power chip (52) extends towards the power terminal (10) and the signal terminal (20) in an arc shape.
6. The power module package structure according to claim 4 or 5,
the sum of the thicknesses of the diode chip (51) and the molybdenum sheet (60) welded on the diode chip (51) is equal to the sum of the thicknesses of the power chip (52) and the molybdenum sheet (60) welded on the power chip (52).
7. The power module package structure of claim 6,
the top of the shell (1) is provided with a first mounting hole (101) and a second mounting hole (102);
the top of the power terminal (10) passes through the first mounting hole (101) and extends to the outside of the housing (1), and the top of the signal terminal (20) passes through the second mounting hole (102) and extends to the outside of the housing (1).
8. The power module package structure of claim 7,
a convex block (103) protruding upwards is arranged at the position, corresponding to the second mounting hole (102), of the top of the shell (1);
the bump (103) is provided with a through hole communicated with the second mounting hole (102) along the protruding direction, and the top of the signal terminal (20) penetrates through the through hole.
9. The power module package structure according to claim 7 or 8,
the solder is tin paste, silver paste or nano silver.
10. The power module package structure of claim 9,
the thickness of the solder is 10 microns.
11. The power module package structure of claim 10,
the power module main body is a wide bandgap three-phase full-bridge power module.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220650062.7U CN217182187U (en) | 2022-03-23 | 2022-03-23 | Power module packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202220650062.7U CN217182187U (en) | 2022-03-23 | 2022-03-23 | Power module packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117059588A (en) * | 2023-08-07 | 2023-11-14 | 上海林众电子科技有限公司 | Power module packaging platform and power module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117059588A (en) * | 2023-08-07 | 2023-11-14 | 上海林众电子科技有限公司 | Power module packaging platform and power module |
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