CN110176451A - Power module and its packaging method - Google Patents

Power module and its packaging method Download PDF

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Publication number
CN110176451A
CN110176451A CN201910394758.0A CN201910394758A CN110176451A CN 110176451 A CN110176451 A CN 110176451A CN 201910394758 A CN201910394758 A CN 201910394758A CN 110176451 A CN110176451 A CN 110176451A
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CN
China
Prior art keywords
chip
power
pin
control zone
power module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910394758.0A
Other languages
Chinese (zh)
Inventor
敖利波
史波
曹俊
曾丹
肖婷
江伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhuhai Zero Boundary Integrated Circuit Co Ltd
Original Assignee
Gree Electric Appliances Inc of Zhuhai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gree Electric Appliances Inc of Zhuhai filed Critical Gree Electric Appliances Inc of Zhuhai
Priority to CN201910394758.0A priority Critical patent/CN110176451A/en
Publication of CN110176451A publication Critical patent/CN110176451A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4875—Connection or disconnection of other leads to or from bases or plates
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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Abstract

It includes loading plate that the present invention, which provides a kind of power module and its packaging method, power module, and the loading plate includes insulating layer and the metal layer for being set to one surface of insulating layer；The power module further includes at least one power chip and at least one driving chip, is mounted on the surface far from the insulating layer of the metal layer respectively, and be electrically connected by bonding line and the metal layer.The present invention replaces the high-density lead frame and pcb board of the prior art to simplify packaging technology to greatly save cost by the way that power chip, driving chip and pin to be mounted on to the metal layer of loading plate by loading plate.

Description

Power module and its packaging method
Technical field
The present invention relates to technical field of semiconductor encapsulation more particularly to a kind of power module and its packaging methods.
Background technique
Intelligent power module, i.e. IPM (Intelligent Power Module) are a kind of by power electronics and integrated electricity The power drive device that road technique combines.Since with advantages such as high integration, high reliability, intelligent power module wins more next Bigger market is particularly suitable for the frequency converter and various inverters of driving motor, is frequency control, metallurgical machinery, electric power Traction, servo-drive, the common power electronic element of frequency-conversion domestic electric appliances.
As shown in Figs. 1-2, existing intelligent power module uses copper lead frame for carrier, has the following disadvantages in lead Bonding power chip on frame, in order to reduce module volume or even realize driving IC chip by the way of embedded pcb board Cabling, but it is constrained to intensity and the die life of copper lead frame, lead frame processing cost accounts for the one of entire packaging cost Half or more.It is analyzed in manufacturing cost and technology difficulty, the big processing of lead frame punching press difficulty is at high cost, and in actual production only Tin cream technique can be used, just can be carried out wire bonding after flux cleaning must be carried out after reflow soldering, is easy reliable to bonding wire Property has an impact.
Summary of the invention
The present invention provides a kind of power module and its packaging method, to realize saving cost, simplifies packaging technology.
To achieve the above object, the present invention provides a kind of power modules characterized by comprising
Loading plate, including insulating layer and the metal layer for being set to one surface of insulating layer；
At least one power chip and at least one driving chip are mounted on the separate insulation of the metal layer respectively The surface of layer, and be electrically connected by bonding line and the metal layer.
Further, the metal layer includes:
Control zone, is used to mount at least one described driving chip, and the driving chip passes through bonding line and the control Area's connection processed；And
Power area, is used to mount at least one described power chip, and the power chip passes through bonding line and the function The connection of rate area.
Further, the driving chip is connect by gold thread bonding pattern with the control zone, and the power chip is logical Aluminum wire bonding mode is crossed to connect with the power area.
Further, the power module further includes resin layer, the resin layer encapsulating loading plate, driving chip and power Chip is in one.
Further, the loading plate further includes the heat dissipation that the surface far from the metal layer of the insulating layer is arranged in Layer, the heat dissipating layer expose the resin layer surface.
Further, the driving chip includes BDI bootstrapping chip, bridge driving chip and/or the upper bridge drive of HVIC under LVIC Dynamic chip.
Further, the control zone includes the first chip welding region and the first circuit trace region, the BDI bootstrapping Bridge driving chip is welded on the first chip welding region and adopts on bridge driving chip and/or HVIC under chip, the LVIC Connection is bonded with the first cabling circuit in first circuit trace region with gold thread.
Further, the power chip includes igbt chip and FRD chip.
Further, the power area includes the second chip welding region and second circuit routing region, the IGBT core The second cabling circuit key in aluminum steel and the second circuit routing region is respectively adopted in the emitter of piece and the anode of FRD chip Close connection；And
The collector of the igbt chip and the cathode of FRD chip are welded on the second chip welding region.
Further, the power module further includes
At least one first pin is electrically connected in side of the control zone far from power area and the control zone；And
At least one second pin is electrically connected in side of the power area far from control zone and the power area.
Further, first pin and second pin are tin-coated copper pin；First pin and the first cabling Circuit welding, the second pin and the second cabling circuit weld.
Further, the resin layer is epoxy resin layer.
Further, the two sides of the loading plate have the arc groove of indent.
Further, the loading plate includes double-sided copper-clad substrate or two-sided covers aluminum substrate.
A kind of packaging method of power module, the power module include loading plate, the loading plate include insulating layer and It is set to the metal layer on one surface of insulating layer, the metal layer includes power area and control zone, and the packaging method includes:
Step 1: the first pin and second pin are respectively welded at the control zone and the power area；
Step 2: at least one power chip and at least one driving chip are respectively welded at the power area and described Control zone；
Step 3: the surface impurity of the semi-finished product module after above-mentioned welding is removed using plasma cleaning mode；
Step 4: bonding pattern is used, at least one described power chip is electrically connected with the power area, it will be described At least one driving chip and the control zone are electrically connected；
Step 5: being encapsulated using injection molding process；
Step 6: using mould punching mode, the connecting rod of extra pin is cut off, and be bent into preset shape.
Further, the first pin and second pin are respectively welded at the control zone and power area, specifically included:
Step 1a: use laser welding, resistance welding, tin cream welding or ultrasonic bonding mode by first pin The first cabling circuit of the control zone and the second cabling circuit in the power area are respectively welded at the second pin, with It is electrically connected the first pin and the first cabling circuit, the second pin and the second cabling circuit are electrically connected.
Further, at least one power chip and at least one driving chip are respectively welded at the power area and institute State control zone, comprising:
Step 2a: being welded on the power area at least one described power chip using solder technique so that it is described extremely A few power chip and the power area are electrically connected；
Step 2b: being welded on the control zone at least one described driving chip using silver paste technique so that it is described extremely A few driving chip and the control zone are electrically connected.
Further, using bonding pattern, at least one described power chip is electrically connected with the power area, by institute It states at least one driving chip and the control zone is electrically connected, comprising:
Step 4a: at least one described power chip is bonded with the second cabling circuit by connection using aluminum steel；
Step 4b: at least one described driving chip is bonded with the first cabling circuit by connection using lead.
Further, it is encapsulated using injection molding process, comprising:
Using epoxy resin injection molding process, the power module is encapsulated as so that the loading plate far from described The heat dissipating layer on the surface of metal layer exposes resin layer surface.
Compared with the existing technology, the present invention provides a kind of power module and its packaging method, by by power chip, driving Chip and pin are mounted on the metal layer of loading plate, i.e., by loading plate replace the prior art high-density lead frame and Pcb board simplifies packaging technology to greatly save cost.
Power chip passes through bonding line Direct Bonding in loading plate, and driving chip is also by bonding line Direct Bonding In loading plate, so that power chip and driving chip is worked more stable, while also reducing bonding difficulty.
The application replaces the high-density lead frame and pcb board of the prior art using loading plate, while also removing galvanizer Skill shortens production time save the cost.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with It obtains other drawings based on these drawings.
Fig. 1 is the main view of the power module of the prior art；
Fig. 2 is the side sectional view of the power module of the prior art；
Fig. 3 is a kind of main view of power module provided by the invention；
Fig. 4 is a kind of side sectional view of power module provided by the invention；
Fig. 5 is the structural schematic diagram of DBC substrate；
Fig. 6 is the schematic diagram of three-phase inverting circuit；
Fig. 7 is that pin and DBC substrate weld schematic diagram；
Fig. 8 is that power chip and DBC substrate weld schematic diagram；
Fig. 9 is that driving chip and DBC substrate weld schematic diagram；
Figure 10 is the semi-finished product module diagram in plasma cleaning；
Figure 11 is the schematic diagram that power chip is connect with metal layer by crude aluminum line bonding；
Figure 12 is the schematic diagram that driving chip and metal layer are connected by wire bonding；
Figure 13 is that resin layer encapsulates the schematic diagram after finished product module；
Figure 14 is the schematic diagram after pin bending；
Figure 15 is the flow diagram of the packaging method of power module provided in this embodiment.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
In addition, term " includes " and " having " and their any deformation, it is intended that covering non-exclusive includes example Such as, the process, method, system, product or equipment for containing a series of steps or units those of are not necessarily limited to be clearly listed Step or unit, but may include being not clearly listed or intrinsic for these process, methods, product or equipment other Step or unit.
The intelligent power module 10 (as illustrated in fig. 1 and 2) of the prior art, including epoxy resin 111, driving side are bonded aluminum steel 112, pcb board 113, full-bridge driving IC chip 114, bonding gold thread 115, control electrode are bonded aluminum steel 116, igbt chip 117, FRD Chip 118, crude aluminum line 119 and copper lead frame 110.
Power module provided by the present invention based on loading plate (DBC substrate or double-sided copper-clad ceramic substrate) is suitable for appointing A kind of what power being integrated in including more power chips and driving chip with compact physical size and tiny outer dimension In module.
In the present invention, DBC substrate or double-sided copper-clad ceramic substrate why is used to replace conventional lead frame, is because of DBC Substrate and double-sided copper-clad ceramic substrate have excellent thermal conduction characteristic, high-insulativity, high current bearing capacity, excellent resistance to scolding tin Property and high-adhesion, and various lines can be equally etched as PCB (Printed Circuit Board, printed circuit board) Road figure can satisfy the demand that chip and multiple components coexist.
Loading plate of the invention includes but is not limited to DBC substrate (Direct Bonding Copper, double-sided copper-clad ceramics Substrate), such as aluminium ceramic substrate can also be covered to be two-sided.
It in the following embodiments, is that DBC substrate is described in detail with loading plate.DBC substrate includes insulating layer, is located at absolutely The metal layer (copper clad layers) of edge layer side and heat dissipating layer (heat dissipation layers of copper) positioned at the insulating layer other side.
Refering to shown in Fig. 3-4, present embodiments providing a kind of power module 20, including resin layer 211, driving chip 215, Power chip 219, DBC substrate 225 and several pins 227.
Refering to shown in Fig. 3 and 5, the DBC substrate 225 includes insulating layer 2251, the gold positioned at 2,251 1 surface of insulating layer Belong to layer 2252 and the heat dissipating layer 2253 positioned at another surface of insulating layer 2251；The metal layer 2252 includes control zone 2252a With power area 2252b；The control zone 2252a includes that the first chip welding region (i.e. do not mark in figure by driving chip welding region Show) and the first circuit trace region, first circuit trace region includes the first cabling circuit 233；The power area 2252b Including the second chip welding region (i.e. power chip welding region, figure in do not indicate) and second circuit routing region, described Two circuit trace regions include the second cabling circuit 235.
The two sides two sides of DBC substrate 225 have the arc groove 229 of indent, install convenient for screw, specifically, in DBC substrate 225 two sides are set as the arc groove 229 of indent, and only the preferred embodiment of the present embodiment, does not limit the present invention with this Protection scope, i.e., 225 other positions of DBC substrate setting for screw installation round hole also in protection scope of the present invention It is interior.In addition the present invention does not limit the concrete shape of slot or hole for mounting screw yet, and wherein the shapes such as polygon are also in this hair In bright protection scope.
Power chip 219, driving chip 215 and pin 227 can be electrically welded on DBC substrate by metal layer 2252 Metal layer 2252, i.e., using DBC substrate 225 replace the prior art high-density lead frame and pcb board, thus greatly Cost has been saved, packaging technology is simplified.
Refering to shown in Fig. 3-5, the driving chip 215 is welded on the first chip welding region of the control zone 2252a, And driving chip 215 and the first cabling circuit 233 are electrically connected by bonding line；The power chip 215 is welded on institute The second chip welding region of power area 2252b is stated, and power chip 215 and the second cabling circuit 235 pass through bonding line It is electrically connected；Division region is carried out to the using face of metal layer 2252, the region according to division includes control zone 2252a and function Rate area 2252b, consequently facilitating planning power chip 219 and driving chip 215 are in the attachment welding position of DBC substrate 225；Simultaneously It can also avoid prior art needs that power chip 219 and driving chip 215 are separately mounted to copper lead frame and PCB respectively The shortcomings that plate.
DBC substrate 225 further includes heat dissipating layer 2253, and heat dissipating layer 2253 exposes 211 surface of resin layer, driving chip 215 and power chip 219 when working the heat that generates the heat dissipation of heat dissipating layer 2253 is transmitted to through metal layer 2252, insulating layer 2251 Face, to improve heat-sinking capability；By being insulated by insulating layer 2251, therefore using safe.
Power chip 219 in power module in the present embodiment, for generating power drive signal, the power chip 219 are welded in the second chip welding region of the power area 2252b by solder technique, so that power chip 219 and institute The electric connection of metal layer 2252 is stated, while by using 223 bonding pattern of crude aluminum line by power chip 219 and second cabling Circuit 235 is electrically connected.
Power chip 219 includes igbt chip 2191 and FRD chip 2193, and igbt chip 2191 and FRD chip 2193 Between be electrically connected by wire bonding mode, wherein conducting wire includes but is not limited to crude aluminum line, gold thread etc..The igbt chip The second cabling that 2191 emitter and the anode of FRD chip 2193 pass through crude aluminum line bonding mode and the power area 2252b Circuit 235, which is realized, to be electrically connected；And the cathode solder technique weldering of the collector and FRD chip 2193 of the igbt chip 2191 It connects in the second chip welding region of the power area 2252b.
It please refers to shown in Fig. 3-5, driving chip 215 includes BDI bootstrapping chip 2153 (such as bootstrap diode), the BDI Chip 2153 of booting is realized by the first cabling circuit 233 of gold thread bonding pattern and the control zone 2252a to be electrically connected.Please Note that the gold thread 213 in above-mentioned gold thread bonding pattern is the optimal technical scheme of the present embodiment, the present invention is not limited with this Protection scope, wherein it is also within the scope of the present invention to replace gold thread 223 to be bonded by copper wire or fine aluminum wire etc..
Driving chip 215 further includes bridge driving chip 2151 on bridge driving chip 2157 or/and HVIC under LVIC, and LVIC Bridge driving chip 2151 is also by the of gold thread bonding pattern and the control zone 2252a on lower bridge driving chip 2157 or HVIC One cabling circuit 233, which is realized, to be electrically connected.It note that the gold thread 213 in above-mentioned gold thread bonding pattern is the excellent of the present embodiment Selecting technology scheme, is not limited the scope of the invention with this, wherein replacing 213 key of gold thread by copper wire or fine aluminum wire etc. It closes also within the scope of the present invention.Under LVIC on bridge driving chip 2157 or HVIC bridge driving chip 2151 respectively with it is corresponding 3 igbt chips 2191 pass through gold thread bonding connection.
Driving chip 215 includes but is not limited to BDI bootstrapping chip 2153, bridge on bridge driving chip 2157 or HVIC under LVIC Driving chip 2151；Driving chip 215 of the invention also unlimited particular number processed simultaneously, no matter quantity is how many in the present invention Protection scope in.
Its power chip 219 is 6, that is, includes 6 igbt chip 2191 and 6 FRD chips 2193, be separately mounted to 12 the second chip welding regions of power area 2252b, and every igbt chip 2191 electrically connects with corresponding FRD chip 2193 It connects, to form 6 groups of power chips 219, i.e. Shang Qiao and each three groups of power chips 219 of lower bridge；Specifically, upper bridge is by 3 groups of IGBT Chip 2191 and FRD chip 2193 form, 3 igbt chips 2191 of upper bridge respectively with 2151 company of bonding of bridge driving chip on HVIC It connecing, the cathode of the collector of igbt chip 2191 and FRD chip 2193 is realized by DBC substrate 225 and is electrically connected in every group, and P phase is drawn, while the emitter of igbt chip 2191 and the anode of FRD chip 2193 pass through what crude aluminum line 223 was bonded in every group Mode is electrically connected, and draws U, V, W three-phase electrode；Lower bridge is made of 3 groups of igbt chips 2191 and FRD chip 2193,3, lower bridge Igbt chip 2191 is bonded connection with bridge driving chip 2157 under LVIC respectively, in every group the collector of igbt chip 2191 with The cathode of FRD chip 2193 is electrically connected by DBC substrate 225, the emitter of igbt chip 2191 and the anode of FRD chip 2193 It is electrically connected in such a way that crude aluminum line 223 is bonded, and draws tri- electrode of NU, NV, NW；Three groups of crude aluminum line bondings of upper bridge with it is corresponding Lower bridge DBC substrate 225 is electrically connected, so that 6 groups of power chips 219 form three-phase inverting circuit (such as Fig. 6 on DBC substrate 225 It is shown).
At least one first pin 231, side of the 2252a far from power area 2252b and the control zone in control zone 2252a is electrically connected；And at least one second pin 227, side of the power area 2252b far from control zone 2252a with The power area 2252b is electrically connected；First pin 231 and second pin 227 are tin-coated copper pin；Described first draws Foot 231 and the first cabling circuit 233 weld, and the second pin 227 and the second cabling circuit 235 weld；Described first Pin 231 and second pin 227 stretch out resin layer 211.It note that welding manner here includes but is not limited to Laser Welding It connecing, resistance welding, tin cream weld or the techniques such as ultrasonic bonding, that is to say, that said welding method is also merely citing herein, It is not intended to limiting the invention, in other words, one skilled in the art should can according to actual demand or application come into Row relevant design.
Resin layer 211 is epoxy resin layer, and epoxy resin layer refers to one kind containing more than two epoxy groups in molecule The general name of polymer.It is the polycondensation product of epoxychloropropane and bisphenol-A or polyalcohol.It, can due to the chemical activity of epoxy group Make its open loop with a variety of compounds containing active hydrogen, solidification crosslinking generates reticular structure, therefore it is a kind of thermosetting resin.
It please refers to shown in Figure 15, according to the packaging method for the above-mentioned power module that the present embodiment is recorded, is applied to DBC substrate Or the two-sided metal layer for covering aluminum substrate, the metal layer include power area and control zone, the control zone is welded including the first chip Region and the first circuit trace region are connect, the power area includes the second chip welding region and second circuit routing region, institute Stating the first circuit trace region includes the first cabling circuit, and the second circuit routing region includes the second cabling circuit, the party Method includes:
It please refers to shown in Fig. 7, step 201: using laser welding, resistance welding, tin cream welding or ultrasonic bonding side First pin 231 and the second pin 227 are respectively welded at the first cabling circuit of the control zone 2252a by formula The second cabling circuit 235 of the 233 and power area 2252b, so that the first pin 231 and 233 electricity of the first cabling circuit Property connection, the second pin 227 is electrically connected with the second cabling circuit 235.
First pin 231 is welded on by institute using laser welding, resistance welding, tin cream welding or ultrasonic bonding mode The first cabling circuit 233 is stated, so that the first pin 231 is electrically connected with the first cabling circuit 233；Specifically, using folder Have fixed DBC substrate 225 and several first pins 231, passes through laser welding, resistance welding, tin cream welding or ultrasonic bonding Etc. modes, so that the metal layer of the first pin 231 and DBC substrate 225 is realized that physically and electrically property is connect.
Second pin 227 is welded on by institute using laser welding, resistance welding, tin cream welding or ultrasonic bonding mode The second cabling circuit 235 is stated, so that second pin 227 and the second cabling circuit 235 are electrically connected；Specifically, using folder Have fixed DBC substrate 225 and several first pins 227, passes through laser welding, resistance welding, tin cream welding or ultrasonic bonding Etc. modes, so that the metal layer of second pin 227 and DBC substrate 225 is realized that physically and electrically property is connect.
It please refers to shown in Fig. 8, step 202: being welded at least one described power chip 219 using solder technique described The power area 2252b of metal layer, so that the power area 2252b of power chip 219 and the metal layer is electrically connected；Specifically, In 2193 pre-welding position of igbt chip 2191 and FRD chip, solder(ing) paste is put, then chip placement, makes chip and the power The second chip welding region of area 2252b realizes that physics is fixed and is electrically connected.
It please refers to shown in Fig. 9, step 203: being welded at least one described driving chip 215 using silver paste technique described The control zone 2252a of metal layer, so that the control zone 2252a of driving chip 215 and the metal layer is electrically connected；Specifically, It boots chip 2153,2151 pre-welding position spot printing silver of bridge driving chip on bridge driving chip 2157 and HVIC under LVIC in DI Slurry, then baking-curing, makes the first chip welding region of the above-mentioned driving chip 215 and control zone 2252a realize physics Fixed and electrical connection.
It please refers to shown in Figure 10, step 204: removing the semi-finished product module after above-mentioned welding using plasma cleaning mode Surface impurity；Specifically, by plasma cleaning equipment, the semi-finished product Modular surface after having completed above-mentioned steps 3 is washed Impurity (such as scaling powder, oxide), provide safeguard for subsequent step wire bonding.
It please refers to shown in Figure 11, step 205: will at least one described power chip 219 using 223 bonding pattern of crude aluminum line It is electrically connected with the second cabling circuit 235 of the power area 2252b；It is specifically, regular according to the wire bonding being pre-designed, The second cabling circuit 235 of the anode of the emitter of igbt chip 2191 and FRD chip 2193 and the power area 2252b is real Now it is electrically connected.
It please refers to shown in Figure 12, step 206: will at least one described driving chip 215 and institute using wire bonding mode The the first cabling circuit 233 for stating control zone 2252a is electrically connected.Specifically, BDI bootstrapping chip 2153,2151 and of HVIC chip Said chip is realized with the first cabling circuit 233 and is electrically connected according to the wire bonding rule being pre-designed by LVIC chip 2157 It connects, it is noted that, above-mentioned wire bonding includes but is not limited to gold thread 213, copper wire or fine aluminum wire bonding.
It please refers to shown in Figure 13, step 207: using injection molding process, the finished product module after above-mentioned bonding connection being led to It crosses resin layer 211 and is encapsulated in one；Specifically, using epoxy resin injection molding process, by the finished product after above-mentioned bonding connection Circuit and chip in module are encapsulated, and are played the role of physical protection, chemoproection and are electrically insulated.Using epoxy resin The power module 20 is encapsulated as the surface far from the metal layer 2252 so that loading plate by injection molding process Heat dissipating layer 2253 exposes 211 surface of resin layer.
It please refers to shown in Figure 14, step 208: using mould punching mode, the connecting rod of extra pin 227 being cut off, and is rolled over Curve preset shape.
The application replaces the high-density lead frame and pcb board of the prior art using DBC substrate, in packaging method no longer Electroplating technology is needed, production time save the cost is shortened, avoiding can bring steam to invade problem in electroplating technology.
It should be understood that " one embodiment " or " embodiment " that specification is mentioned in the whole text mean it is related with embodiment A particular feature, structure, or characteristic includes at least one embodiment of the application.Therefore, occur everywhere in the whole instruction " in one embodiment " or " in one embodiment " not necessarily refer to identical embodiment.In addition, these specific features, knot Structure or characteristic can combine in any suitable manner in one or more embodiments.It should be understood that in the various implementations of the application In example, magnitude of the sequence numbers of the above procedures are not meant that the order of the execution order, the execution sequence Ying Yiqi function of each process It can be determined with internal logic, the implementation process without coping with the embodiment of the present application constitutes any restriction.Above-mentioned the embodiment of the present application Serial number is for illustration only, does not represent the advantages or disadvantages of the embodiments.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution The range of scheme.

Claims (19)

1. power module characterized by comprising
Loading plate, including insulating layer and the metal layer for being set to one surface of insulating layer；
At least one power chip and at least one driving chip are mounted on the separate insulating layer of the metal layer respectively Surface, and be electrically connected by bonding line and the metal layer.
2. power module according to claim 1, which is characterized in that the metal layer includes:
Control zone, is used to mount at least one described driving chip, and the driving chip passes through bonding line and the control zone Connection；And
Power area, is used to mount at least one described power chip, and the power chip passes through bonding line and the power area Connection.
3. power module according to claim 2, which is characterized in that the driving chip passes through gold thread bonding pattern and institute Control zone connection is stated, the power chip is connect by aluminum wire bonding mode with the power area.
4. power module according to claim 1, which is characterized in that it further include resin layer, the resin layer encapsulating carrying Plate, driving chip and power chip are in one.
5. power module according to claim 4, which is characterized in that the loading plate further includes being arranged in the insulating layer The surface far from the metal layer heat dissipating layer, the heat dissipating layer exposes the resin layer surface.
6. power module according to claim 1, which is characterized in that the driving chip includes BDI bootstrapping chip, LVIC Bridge driving chip on lower bridge driving chip and/or HVIC.
7. power module according to claim 6, which is characterized in that the control zone include the first chip welding region and First circuit trace region, bridge driving chip and/or the upper bridge driving chip of HVIC weld under BDI bootstrapping chip, the LVIC It connects in the first chip welding region and is bonded using gold thread with the first cabling circuit in first circuit trace region Connection.
8. power module according to claim 1, which is characterized in that the power chip includes igbt chip and FRD core Piece.
9. power module according to claim 8, which is characterized in that the power area include the second chip welding region and Aluminum steel and second electricity is respectively adopted in second circuit routing region, the emitter of the igbt chip and the anode of FRD chip The second cabling circuit in the routing region of road is bonded connection；And
The collector of the igbt chip and the cathode of FRD chip are welded on the second chip welding region.
10. power module according to claim 2, which is characterized in that further include
At least one first pin is electrically connected in side of the control zone far from power area and the control zone；And
At least one second pin is electrically connected in side of the power area far from control zone and the power area.
11. power module according to claim 10, which is characterized in that first pin and second pin are tin plating Copper pin；First pin and the first cabling circuit weld, and the second pin and the second cabling circuit weld.
12. power module according to claim 4, which is characterized in that the resin layer is epoxy resin layer.
13. power module according to claim 1, which is characterized in that the two sides of the loading plate have the circular arc of indent Slot.
14. power module according to claim 1, which is characterized in that the loading plate includes double-sided copper-clad substrate or double Cover aluminum substrate in face.
15. the packaging method of power module, the power module includes loading plate, and the loading plate includes insulating layer and is set to The metal layer on one surface of insulating layer, the metal layer include power area and control zone, which is characterized in that the packaging method Include:
First pin and second pin are respectively welded at the control zone and the power area；
At least one power chip and at least one driving chip are respectively welded at the power area and the control zone；
The surface impurity of the semi-finished product module after above-mentioned welding is removed using plasma cleaning mode；
Using bonding pattern, at least one described power chip is electrically connected with the power area, it will at least one described drive Dynamic chip and the control zone are electrically connected；
It is encapsulated using injection molding process；
Using mould punching mode, the connecting rod of extra pin is cut off, and is bent into preset shape.
16. packaging method according to claim 15, which is characterized in that the first pin and second pin to be respectively welded at The control zone and power area, specifically include:
Using laser welding, resistance welding, tin cream welding or ultrasonic bonding mode by first pin and described second Pin is respectively welded at the first cabling circuit of the control zone and the second cabling circuit in the power area, so that the first pin It is electrically connected with the first cabling circuit, the second pin and the second cabling circuit are electrically connected.
17. packaging method according to claim 15, which is characterized in that by least one power chip and at least one drive Dynamic chip is respectively welded at the power area and the control zone, comprising:
At least one described power chip is welded on by the power area using solder technique, so that at least one described power core Piece and the power area are electrically connected；
At least one described driving chip is welded on by the control zone using silver paste technique, so that at least one described driving core Piece and the control zone are electrically connected.
18. according to the method for claim 15, which is characterized in that bonding pattern is used, it will at least one described power core Piece and the power area are electrically connected, at least one described driving chip is electrically connected with the control zone, comprising:
At least one described power chip is bonded with the second cabling circuit by connection using aluminum steel；
At least one described driving chip is bonded with the first cabling circuit by connection using lead.
19. according to the method for claim 15, which is characterized in that encapsulated using injection molding process, comprising:
Using epoxy resin injection molding process, the power module is encapsulated as to the separate metal so that the loading plate The heat dissipating layer on the surface of layer exposes resin layer surface.
CN201910394758.0A 2019-05-13 2019-05-13 Power module and its packaging method Pending CN110176451A (en)

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CN113013106B (en) * 2019-12-19 2023-08-11 广东美的白色家电技术创新中心有限公司 Intelligent power module, preparation method thereof and electric appliance comprising intelligent power module
CN116130477A (en) * 2023-02-28 2023-05-16 海信家电集团股份有限公司 Intelligent power module and electronic equipment with same
CN116130477B (en) * 2023-02-28 2023-10-27 海信家电集团股份有限公司 Intelligent power module and electronic equipment with same
CN116646326A (en) * 2023-04-28 2023-08-25 海信家电集团股份有限公司 Intelligent power module and electronic equipment with same
CN116646326B (en) * 2023-04-28 2023-11-10 海信家电集团股份有限公司 Intelligent power module and electronic equipment with same
CN116913792A (en) * 2023-07-21 2023-10-20 上海林众电子科技有限公司 Double-sided heat dissipation packaging module and manufacturing method
CN116913792B (en) * 2023-07-21 2024-03-22 上海林众电子科技有限公司 Double-sided heat dissipation packaging module and manufacturing method

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