CN203481230U

CN203481230U - Intelligent power module

Info

Publication number: CN203481230U
Application number: CN201320587706.3U
Authority: CN
Inventors: 冯宇翔
Original assignee: Guangdong Midea Refrigeration Equipment Co Ltd
Current assignee: GD Midea Air Conditioning Equipment Co Ltd
Priority date: 2013-09-23
Filing date: 2013-09-23
Publication date: 2014-03-12
Anticipated expiration: 2023-09-23

Abstract

The utility model is suitable for electronic device technology and provides an intelligent power module. The intelligent power module comprises a metal substrate, a circuit wiring layer, a plurality of IGBT tubes, gate drive tubes and metal wires, wherein one surface of the metal substrate is coated with an insulating layer; the circuit wiring layer is formed on the surface of the insulating layer; the plurality of IGBT tubes are arranged at preset positions of the circuit wiring layer; the number of the gate drive tubes is the same as the number of the IGBT tubes; each gate drive tube is respectively used as a drive circuit of a corresponding IGBT tube; electrical connection wiring length from a drive end of each gate drive tube to a grid of the corresponding IGBT tube is the same; the metal wires are connected among the circuit wiring layer, the IGBT tubes and the gate drive tubes to form a preset circuit. According to the utility model, consistent wiring from each gate drive tube to the corresponding IGBT tube's grid can be guaranteed, dynamic characteristics of the IGBT tubes are the same, and wiring of the intelligent power module will not be increased.

Description

Intelligent Power Module

Technical field

The utility model belongs to electronic device manufacturing process field, relates in particular to a kind of Intelligent Power Module.

Background technology

Intelligent Power Module (Intelligent Power Module, IPM) is a kind of by the power drive series products of power electronics and integrated circuit technique combination.IPM integrates device for power switching and high-voltage driving circuit, and in keep overvoltage, overcurrent and the failure detector circuit such as overheated.IPM receives MCU(Microprogrammed Control Unit, microprogram control unit on the one hand) control signal, drive subsequent conditioning circuit work, send the state detection signal of system back to MCU on the other hand.Compare with the discrete scheme of tradition, IPM wins increasing market with advantages such as its high integration, high reliability, be particularly suitable for frequency converter and the various inverter of drive motors, it is frequency control, metallurgical machinery, electric traction, servo-drive, a kind of desirable power electronic device of frequency-conversion domestic electric appliances.

The circuit theory of existing Intelligent Power Module 100 is as shown in Fig. 1 (A):

HVIC(High Voltage Integrated Circuit, high voltage integrated circuit) manage 101 VCC end as the low-pressure area power supply anode VDD of Intelligent Power Module 100, VDD is generally 15V; The HIN1 end of HVIC pipe 101 is gone up brachium pontis input UHIN mutually as the U of Intelligent Power Module 100; The HIN2 end of HVIC pipe 101 is gone up brachium pontis input VHIN mutually as the V of Intelligent Power Module 100; The HIN3 end of HVIC pipe 101 is gone up brachium pontis input WHIN mutually as the W of Intelligent Power Module 100; The LIN1 end of HVIC pipe 101 descends brachium pontis input ULIN mutually as the U of Intelligent Power Module 100; The LIN2 end of HVIC pipe 101 descends brachium pontis input VLIN mutually as the V of Intelligent Power Module 100; The LIN3 end of HVIC pipe 101 descends brachium pontis input WLIN mutually as the W of Intelligent Power Module 100.At this, the U of Intelligent Power Module 100, V, the input of W three-phase Liu road receive the input signal of 0～5V.

The GND end of HVIC pipe 101 is as the low-pressure area power supply negative terminal COM of Intelligent Power Module 100; The VB1 end of HVIC pipe 101 is as the U phase higher-pressure region power supply anode UVB of Intelligent Power Module 100; The HO1 end of HVIC pipe 101 is gone up brachium pontis IGBT(Insulated Gate Bipolar Translator, insulated gate gate pole transistor mutually with U) to manage 121 grid connected; The VS1 end of HVIC pipe 101 and emitter, the FRD(Fast Recovery Diode of IGBT pipe 121, fast recovery diode) manage 111 anode, U and descend mutually the collector electrode of brachium pontis IGBT pipe 124, the negative electrode of FRD pipe 114 is connected, and as the U phase higher-pressure region power supply negative terminal UVS of Intelligent Power Module 100; The VB2 end of HVIC pipe 101 is as the U phase higher-pressure region power supply anode VVB of Intelligent Power Module 100; The grid that HO3 end and the V of HVIC pipe 101 goes up brachium pontis IGBT pipe 123 is mutually connected; , anode, the V of FRD pipe 112 descend the collector electrode of brachium pontis IGBT pipe 125 mutually, FRD manages 115 negative electrode is connected for the VS2 end of HVIC pipe 101 and the emitter of IGBT pipe 122, and as the W phase higher-pressure region power supply negative terminal VVS of Intelligent Power Module 100; The VB3 end of HVIC pipe 101 is as the W phase higher-pressure region power supply anode WVB of Intelligent Power Module 100; The grid that HO3 end and the W of HVIC pipe 101 goes up brachium pontis IGBT pipe 123 is mutually connected; , anode, the W of FRD pipe 113 descend the collector electrode of brachium pontis IGBT pipe 126 mutually, FRD manages 116 negative electrode is connected for the VS3 end of HVIC pipe 101 and the emitter of IGBT pipe 123, and as the W phase higher-pressure region power supply negative terminal WVS of Intelligent Power Module 100; The LO1 end of HVIC pipe 101 is connected with the grid of IGBT pipe 124; The LO2 end of HVIC pipe 101 is connected with the grid of IGBT pipe 125; The LO3 end of HVIC pipe 101 is connected with the grid of IGBT pipe 126; The emitter of IGBT pipe 124 is connected with the anode of FRD pipe 114, and as the U phase low reference voltage end UN of Intelligent Power Module 100; The emitter of IGBT pipe 125 is connected with the anode of FRD pipe 115, and as the V phase low reference voltage end VN of Intelligent Power Module 100; The emitter of IGBT pipe 126 is connected with the anode of FRD pipe 116, and as the W phase low reference voltage end WN of Intelligent Power Module 100.

The negative electrode of the collector electrode of IGBT pipe 121, FRD pipe 111, the collector electrode of IGBT pipe 122, the negative electrode of FRD pipe 112, the collector electrode of IGBT pipe 123, the negative electrode of FRD pipe 113 is connected, and as the high voltage input P of Intelligent Power Module 100, P generally meets 300V.

The effect of HVIC pipe 101 is: the logical signal of 0～5V of input HIN1, HIN2, HIN3 and LIN1, LIN2, LIN3 is passed to respectively to output HO1, HO2, HO3 and LO1, LO2, LO3, wherein HO1, HO2, HO3 are the logical signals of VS～VS+15V, and LO1, LO2, LO3 are the logical signals of 0～15V.

The structure of existing Intelligent Power Module 100 is described with reference to Fig. 1 (B).Fig. 1 (C) is the vertical view after the taking-up potting resin of Intelligent Power Module 100, and Fig. 1 (D) is X-X ' the line profile of Fig. 1 (B).

Intelligent Power Module 100 has following structure, and it comprises: circuit substrate 206; Be located at the wiring 208 forming on the lip-deep insulating barrier 207 of circuit substrate 206; Be fixed on the components and parts such as IGBT on wiring 208 pipe 121～126, FRD pipe 111～116, HVIC pipe 101; The metal wire 205 that connects components and parts and wiring 208; The pin 201 being connected with wiring 208; The sealed resin of at least one side 202 sealings of circuit substrate 206, in order to improve sealing, can all seal circuit substrate 206, in order to improve thermal diffusivity, can make the back side of aluminium base 206 be exposed under outside state and seal.

From Fig. 1 (C), can find out, existing Intelligent Power Module is managed by 6 pieces of IGBT of 1 piece of HVIC management and control system, causes cabling very long, easily causes interference between circuit; And, due to not identical from the distance of HVIC pipe to 6 piece IGBT pipe, cause the driving signal transmission homogeny of 6 pieces of IGBT pipes to be difficult to control; In addition, because the wiring on substrate too much certainly will increase the area of substrate, cause the area of existing Intelligent Power Module to strengthen, increased the manufacturing cost of Intelligent Power Module, affected Intelligent Power Module popularizing in low side field; In addition, because needs reserve wiring area, cause components and parts spacing larger, by metal wire, make between components and parts to produce the nation's line connecting longer, affected the reliability of nation's line, and have to have in molding process and cause the risk of breasting the tape.

Utility model content

The utility model is intended to solve the deficiencies in the prior art, provide a kind of assurance cabling few, the driving signal of power device transmits identical Intelligent Power Module, can reduce the area of Intelligent Power Module, guarantee that it drives identical being easy to of signal transmission to control, and improves reliability and performance.

The utility model is achieved in that a kind of Intelligent Power Module, comprising:

Metal substrate, wherein a surface coverage has insulating barrier;

Wiring layer, is formed at described surface of insulating layer;

A plurality of IGBT pipes, are arranged on the predeterminated position on described wiring layer;

Grid driving tube, quantity is identical with described IGBT pipe, and described in each, grid driving tube is respectively as the drive circuit of corresponding described IGBT pipe, and described in each, the drive end of grid driving tube is identical with the track lengths of the grid of described IGBT pipe electrical connection;

Metal wire, is connected between described wiring layer, IGBT pipe and grid driving tube to form preinstalled circuit.

Further, a plurality of described grid driving tubes are arranged at respectively on the emitter of a plurality of described IGBT pipes, and the drive end of described grid driving tube is connected with the grid of described IGBT pipe by described metal wire.

Further, on described wiring layer, for being set, the predeterminated position of described IGBT pipe is arranged in array.

Further, a plurality of described grid driving tubes comprise HVIC pipe and the LVIC pipe that quantity is equal.

Further, described grid driving tube is 6, comprising 3 HVIC pipes and 3 LVIC pipes.

Further, also comprise that quantity and described IGBT manage identical FRD pipe, a plurality of FRD pipes are fixed on described wiring layer by described IGBT pipe respectively.

Further, the negative electrode of described FRD pipe is fixed on described IGBT pipe collector electrode, anode are electrically connected to the emitter of described IGBT pipe by described metal wire.

Further, also comprise pin, described wiring layer comprises that described pin is connected and stretches out from described substrate with described pin pad near the pin pad of the marginal surface of described metal substrate.

Further, also comprise sealant, described sealant is coated on all surface being coated with in described substrate beyond the surf zone that described insulating barrier is relative.

The beneficial effect of above-mentioned Intelligent Power Module is: by separately independently grid driving tube be configured on corresponding IGBT pipe, the cabling from grid driving tube to IGBT tube grid can be accomplished identical, thereby can effectively guarantee the homogeny of IGBT pipe dynamic characteristic; And the cabling of grid driving tube is no longer the centralized cabling in a region, arrange a plurality of separately independently grid driving tube can reduce cabling to the distance of grid driving tube, cabling is greatly reduced, reduce the long unsteadiness of bringing of cabling and also save the area of wiring layer simultaneously, thereby the area of the metal substrate of Intelligent Power Module is significantly reduced, cost is further reduced.

Accompanying drawing explanation

The circuit theory diagrams that Fig. 1 (A) is existing Intelligent Power Module;

The front elevation that Fig. 1 (B) is existing Intelligent Power Module;

Vertical view structural representation after the taking-up potting resin that Fig. 1 (C) is existing Intelligent Power Module;

Fig. 1 (D) is X-X ' the line profile of Fig. 1 (B);

The circuit theory diagrams of the Intelligent Power Module that Fig. 2 (A) provides for the utility model one embodiment;

The front elevation of the Intelligent Power Module that Fig. 2 (B) provides for the utility model one embodiment;

Fig. 2 (C) is the vertical view structural representation of Fig. 2 (B);

Fig. 2 (D) is along the profile of X-X ' line in the Fig. 2 (B) in embodiment of the utility model;

The circuit theory diagrams of the Intelligent Power Module that Fig. 3 (A) provides for another embodiment of the utility model;

The vertical view structural representation of the Intelligent Power Module that Fig. 3 (B) provides for another embodiment of the utility model;

Fig. 3 (C) is the profile in another embodiment of the utility model;

Fig. 4 (A), 4(B) be the operation that substrate, insulating barrier and wiring layer are set that the utility model embodiment provides;

Fig. 5 (A), 5(B) operation that IGBT pipe, FRD pipe, pin are set that provides for the utility model embodiment;

Fig. 6 (A), 6(B) operation that grid driving tube is set that provides for the utility model the first embodiment;

Fig. 7 (A), 7(B) for what the utility model embodiment provided, carry out nation's line connection and matting;

The sealing process that Fig. 8 provides for the utility model embodiment;

The operation of carrying out pin Trim Molding and testing that Fig. 9 provides for the utility model embodiment.

Embodiment

In order to make the technical problems to be solved in the utility model, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.

In conjunction with Fig. 2 (A), 2(B), 2(C), 2(D), in one embodiment, Intelligent Power Module 1 comprises that metal substrate 306, insulating barrier 307, wiring layer 308, a plurality of IGBT pipe 20, quantity and IGBT manage that 20 identical FRD manage 10, quantity and IGBT manage 20 identical grid driving tube 40 and metal wires 305.

A metal substrate 306 wherein surface coverage has insulating barrier 307.Wiring layer 308 is formed at the surface of insulating barrier 307.A plurality of IGBT pipe 20 predeterminated position 308A that are arranged on wiring layer 308; It is 20 identical that grid driving tube 40 quantity and IGBT manage, and each grid driving tube 40 is respectively as the drive circuit of corresponding IGBT pipe 20, and the drive end of each grid driving tube 40 (HO, LO) is identical with the track lengths of the grid electrical connection of IGBT pipe 20.Metal wire 305 is connected between wiring layer 308, IGBT pipe 20 and grid driving tube 40 to form preinstalled circuit.The cabling of managing 20 grids from grid driving tube 40 to IGBT can be accomplished identical, thereby can effectively guarantee that IGBT manages the homogeny of 20 dynamic characteristics.

In a preferred embodiment, a plurality of grid driving tubes 40 are arranged at respectively on the emitter of a plurality of IGBT pipes 20, and the drive end of grid driving tube 40 (HO as shown in Figure 2 (A) shows, LO) is connected with the grid of IGBT pipe 20 by metal wire 305.In other embodiments, grid driving tube 40 can be arranged at a side of corresponding IGBT pipe 20, also can guarantee that the cabling of managing 20 grids from grid driving tube 40 to IGBT can accomplish identically, and also can not increase the cabling of Intelligent Power Module 1.

Further, Intelligent Power Module 1 also comprises pin 301, at the edge of metal substrate 306, is formed with the pin pad 308B for configuration pin 301.Wiring layer 308 comprises that pin 301 is connected and stretches out from metal substrate with pin pad 308B near the pin pad 308B of the marginal surface of metal substrate 306.According to function needs, also a plurality of pin pad 308B for configuration pin 301 can be set near one side, both sides, three limits or four limits of metal substrate 306.

In a preferred embodiment, a plurality of grid driving tubes 40 comprise that quantity equates for driving the HVIC pipe of upper brachium pontis and driving the LVIC(Low Voltage Integrated Circuits of lower brachium pontis, low-voltage ic) pipe.With reference to 3(A) and 3(B), grid driving tube 40 is 6, label is 41,42,43,44,45,46 respectively, comprising 41,42,43 and 3

LVIC pipes

44,45,46 of 3 HVIC pipes.

In a preferred embodiment, on wiring layer 308, for being set, the predeterminated position 308A of IGBT pipe 20 is arranged in array.It is 20 identical that electricity predeterminated position 308A quantity and IGBT manage, and in order to the fixing circuit pattern of IGBT pipe 20, and this is managed 20 predeterminated position 308A and be arranged in array for IGBT is set.Specifically, according to the shape of metal substrate 306 and the set position of pin 301, be to reduce the wiring length of pin 301 and IGBT pipe 20, grid driving tube 40, predeterminated position 308A can be that matrix is arranged, circular array is arranged etc.

As Fig. 2 (A), 2(C) as shown in, in the present embodiment, Intelligent Power Module 1 also comprises that quantity and IGBT manage 20 identical FRD pipes 10, a plurality of FRD pipes 10 are managed 20 by IGBT respectively and are fixed on wiring layer 308.Further, the negative electrode of FRD pipe 10 is fixed on the collector electrode of IGBT pipe 20, the anode of FRD pipe 10 is electrically connected to the emitter of IGBT pipe 20 by metal wire 305.

IGBT pipe 20 and FRD pipe 10 are fixed on the circuit that forms regulation on wiring layer 308.At this, the installation that faces down that faces up, has collector electrode with emitter and grid of 6 pieces of IGBT pipes 20, the installation that faces down that faces up, has negative electrode with anode of FRD pipe 1

Wiring layer 308 consists of metals such as copper, and wiring layer 308 is formed at the certain bits on metal substrate 306 according to default circuit; According to power needs, can be designed to the thickness of 0.035mm or 0.07mm etc., for general Intelligent Power Module, pay the utmost attention to and be designed to 0.07mm, in the present embodiment, adopt the thickness of 0.07mm.

With reference to figure 3(A), 3(B) and 3(C), with interlock circuit principle, further illustrate the embodiment of Intelligent Power Module 1.

HVIC pipe 41 is fixed on IGBT pipe 21, and HVIC pipe 42 is fixed on IGBT pipe 22, and HVIC pipe 43 is fixed on IGBT pipe 23, and LVIC pipe 44 is fixed on IGBT pipe 24, and LVIC pipe 45 is fixed on IGBT pipe 25, and LVIC pipe 46 is fixed on IGBT pipe 26.At this, HVIC

pipe

41,42,43 and

LVIC pipe

44,45,46 positions that are fixed on IGBT pipe are the emitter of IGBT pipe, the IGBT that is 30A for general rated current pipe 20, and the area of emitter can not be less than 6mm ², for general single

armed HVIC pipe

41,42,43 and single

armed LVIC pipe

44,45,46, area can not be greater than mm ².

U goes up brachium pontis output circuit 41(HVIC pipe 41 mutually), V go up brachium pontis output circuit 41(HVIC pipe 42 mutually), W go up brachium pontis output circuit 41(HVIC pipe 43 mutually) be that in 3 pieces of drivings, brachium pontis IGBT manages 21,22,23 single armed HVIC and manages, their structure is identical, effect is that the logical signal of 0～5V of input HIN is passed to output (being drive end) HO, and wherein HO is the logical signal of VS～VS+15V; Because the meeting of VS changes between 0～300V, so U goes up mutually brachium pontis output circuit, V and goes up mutually brachium pontis output circuit, W and go up mutually brachium pontis output circuit and need high voltage bearing flow technique to realize, sometimes in order to reduce costs, use the BCD technique of 650V, sometimes in order to reduce pressure-resistance structure design difficulty, use the SOI technique of 650V.

It is the single armed LVIC pipe of brachium

pontis IGBT pipe

24,25,26 under 3 pieces of drivings that U descends brachium pontis output circuit (LVIC pipe 44), V to descend mutually brachium pontis output circuit (LVIC pipe 45), W to descend mutually brachium pontis output circuit (LVIC pipe 46) mutually, their structure is identical, effect is that the logical signal of 0～5V of input LIN is passed to output (being drive end) LO, and wherein LO is the logical signal of 0～15V; Because U descends brachium pontis output circuit, V mutually, descend mutually brachium pontis output circuit, W to descend mutually brachium pontis output circuit to realize without high voltage bearing flow technique, in order to reduce costs, LVIC pipe can be realized by the low pressure process such as BIPOLAR or COMS cheaply.

U goes up mutually VCC, V that brachium pontis output circuit 41, U descend brachium pontis output circuit 44 mutually and goes up mutually VCC, W that brachium pontis output circuit 42, V descend bridge output circuit 45 mutually and go up mutually brachium pontis output circuit 43, W and descend mutually the VCC of brachium pontis output circuit 44 to be connected, and as the vdd terminal of Intelligent Power Module 1, VDD is the low-pressure area power supply of Intelligent Power Module 1, and VDD is generally 15V.

The HIN that U goes up brachium pontis output circuit 41 mutually holds the U as Intelligent Power Module 1 to go up mutually brachium pontis input UHIN; The HIN that V goes up brachium pontis output circuit 42 mutually holds the V as Intelligent Power Module 1 to go up mutually brachium pontis input VHIN; The HIN that W goes up brachium pontis output circuit 43 mutually holds the W as Intelligent Power Module 1 to go up mutually brachium pontis input WHIN; U descends the LIN of brachium pontis output circuit 44 to hold the U as Intelligent Power Module 1 to descend mutually brachium pontis input ULIN mutually; V descends the LIN of brachium pontis output circuit 45 to hold the V as Intelligent Power Module 1 to descend mutually brachium pontis input VLIN mutually; W descends the LIN of brachium pontis output circuit 46 to hold the W as Intelligent Power Module 1 to descend mutually brachium pontis input WLIN mutually; At this, the U of Intelligent Power Module 1, V, the input of W three-phase Liu road receive the input signal of 0～5V.

U goes up the GND that the GND that GND holds, V goes up bridge output circuit 42 mutually holds, W the goes up bridge output circuit 43 mutually end of bridge output circuit 41 mutually, the GND that the GND that GND holds, V descends bridge output circuit 45 mutually holds, W descends bridge output circuit 46 mutually that U descends bridge output circuit 44 mutually holds connected, and hold as the COM of Intelligent Power Module 1, COM is the negative terminal of VDD power supply.

U goes up the VB end of brachium pontis output circuit 41 mutually as the U phase higher-pressure region power supply anode UVB of Intelligent Power Module 1; V goes up the VB end of brachium pontis output circuit 42 mutually as the V phase higher-pressure region power supply anode VVB of Intelligent Power Module 1; W goes up the VB end of brachium pontis output circuit 41 mutually as the W phase higher-pressure region power supply anode WVB of Intelligent Power Module 1; The HO end that U goes up brachium pontis output circuit 41 is mutually connected with the grid of IGBT pipe 21, U go up mutually the VS end of brachium pontis the output circuit 41 and emitter-base bandgap grading of IGBT the pipe 21, anode of FRD pipe 11, IGBT pipe 24 collector electrode, the negative electrode of FRD pipe 14 be connected, and as the U phase higher-pressure region power supply negative terminal UVS of Intelligent Power Module 1; The HO end that V goes up brachium pontis output circuit 42 is mutually connected with the grid of IGBT pipe 22, V go up mutually the VS end of brachium pontis the output circuit 42 and emitter-base bandgap grading of IGBT the pipe 22, anode of FRD pipe 12, IGBT pipe 25 collector electrode, the negative electrode of FRD pipe 15 be connected, and as the V phase higher-pressure region power supply negative terminal VVS of Intelligent Power Module 1.

The HO end that W goes up brachium pontis output circuit 43 is mutually connected with the grid of IGBT pipe 23, W go up mutually the VS end of brachium pontis the output circuit 43 and emitter-base bandgap grading of IGBT the pipe 23, anode of FRD pipe 13, IGBT pipe 26 collector electrode, the negative electrode of FRD pipe 16 be connected, and as the W phase higher-pressure region power supply negative terminal WVS of Intelligent Power Module 1.

The negative electrode of the collector electrode of the negative electrode of the collector electrode of the negative electrode of the collector electrode of IGBT pipe 21, FRD pipe 11, IGBT pipe 22, FRD pipe 12, IGBT pipe 23, FRD pipe 13 is connected, and as the high voltage input P of Intelligent Power Module 1, high voltage input P generally meets 300V.

U descends the LO end of brachium pontis output circuit 44 to be connected with the grid of IGBT pipe 24 mutually, and the emitter-base bandgap grading of IGBT pipe 24 and FRD manage 14 anode and be connected, and as the U phase low reference voltage end UN of Intelligent Power Module 1; V descends the LO end of brachium pontis output circuit 45 to be connected with the grid of IGBT pipe 25 mutually, and the emitter-base bandgap grading of IGBT pipe 25 and FRD manage 15 anode and be connected, and as the V phase low reference voltage end VN of Intelligent Power Module 1; W descends the LO end of brachium pontis output circuit 46 to be connected with the grid of IGBT pipe 26 mutually, and the emitter-base bandgap grading of IGBT pipe 26 and FRD manage 16 anode and be connected, and as the W phase low reference voltage end WN of Intelligent Power Module 1.

With reference to Fig. 3 (B), 3(C), the structure chart of the Intelligent Power Module 1 of another embodiment.

Intelligent Power Module 1 of the present utility model has the metal substrate 306 being formed with from the teeth outwards by insulating barrier 307, be configured in the wiring layer 308 on insulating barrier 307, be configured in the IGBT pipe 21 on wiring layer 308, IGBT pipe 22, IGBT pipe 23, IGBT pipe 24, IGBT pipe 25, IGBT pipe 26 and FRD pipe 11, FRD pipe 12, FRD pipe 13, FRD pipe 14, FRD pipe 15, FRD pipe 16, be configured in the pin 301 of the marginal portion of wiring layer 308, for connecting the metal wire 305 that makes to form between above-mentioned each element electrical connection, sealing resin 302 with this circuit of sealing and at least complete covering metal substrate 306 upper surface all elements.

With an embodiment, Intelligent Power Module 1 each inscape is described below.

Metal substrate 306 is rectangular plates that the aluminium by the materials such as 1100 forms.In order to improve the corrosion resistance of sheet material, effects on surface carries out anodic oxidation sometimes, in order to save manufacturing cost, at some, to the less demanding application scenario of corrosion resistance, also can only to aluminium material surface, carry out wire drawing processing.The thickness of metal substrate 306 can be selected 1.5mm.

Insulating barrier 307 is formed at metal substrate 306 at least one surface, and high concentration is filled the filler raising thermal conductivities such as aluminium oxide in the resin materials such as epoxy resin.

Wiring layer 308 consists of metals such as copper, is formed at the ad-hoc location on metal substrate 306, according to power needs, can be designed to the thickness of 0.035mm or 0.07mm etc., for general Intelligent Power Module, pay the utmost attention to and be designed to 0.07mm, in the present embodiment, adopt the thickness of 0.07mm.Especially, at the edge of metal substrate 306, be formed with the wiring layer 308 for configuration pin 301.At this, a plurality of wiring layers 308 for configuration pin 301 are set near the both sides of metal substrate 306, according to function needs, also can near one side of metal substrate 306, three limits, four limits, a plurality of wiring layers 308 for configuration pin 301 be set.

IGBT pipe 21～26 and FRD pipe 11～16 are fixed on the circuit that forms regulation on wiring layer 308.At this, the installation that faces down that faces up, has collector electrode with emitter-base bandgap grading and grid of 6 pieces of IGBT pipes 21～26, the installation that faces down that faces up, has negative electrode with anode of FRD pipe 11～16.

HVIC pipe 41 is fixed on IGBT pipe 21, and HVIC pipe 42 is fixed on IGBT pipe 22, and HVIC pipe 43 is fixed on IGBT pipe 23, and LVIC pipe 44 is fixed on IGBT pipe 24, and LVIC pipe 45 is fixed on IGBT pipe 25, and LVIC pipe 46 is fixed on IGBT pipe 26.At this, the position that

HVIC pipe

21,22,23 and

LVIC pipe

24,25,26 are fixed on IGBT pipe 21～26 is the emitter of IGBT pipe 21～26, the IGBT that is 30A for general rated current pipe, and the area of emitter can not be less than 6mm ², for general single

armed HVIC pipe

21,22,23 and single

armed LVIC pipe

24,25,26, area can not be greater than 2mm ².

Metal wire 15 can be aluminum steel, gold thread or copper cash, by nation, surely make to set up electrical connection between each circuit element (the IGBT pipe 20 as shown in Fig. 2 (C), FRD pipe 10, grid driving tube 40) and wiring layer 308, sometimes also for making pin 301 and wiring layer 308 set up electrical connection.

Pin 301 is fixed on the wiring layer 308 of being located at metal substrate 306 edges, and it has the effect of for example inputting, exporting with outside.At this, be designed to relative both sides and be provided with many pins 301, pin 301 and wiring layer 308 weld by the electrical binding agent of the conductions such as scolding tin.The general metals such as copper that adopt of pin 301 are made, and copper surface is by chemical plating and electroplate and form one deck nickeltin layer, and the thickness of alloy-layer is generally 5 μ m, and coating can be protected the copper oxidation that is not corroded, and can improve weldability.

Sealant 302 can be used thermosetting resin molded by transfer die mode, also can use thermoplastic resin molded by injecting mould mode.At this, all elements on complete sealing metal substrate 306 upper surfaces of sealant 302, and require high Intelligent Power Module for compactness, generally can also carry out encapsulation process to the integral body of metal substrate 306, in the present embodiment, in order to improve the thermal diffusivity of Intelligent Power Module, the back side of metal substrate 306 expose.

With reference to 3(C), above-mentioned Intelligent Power Module 1 by separately independently grid driving tube 40 be configured on corresponding IGBT pipe 20, from grid driving tube 40 to IGBT, managing the track lengths of 20 grids can accomplish identical, thereby can effectively guarantee that IGBT manages the homogeny of 20 dynamic characteristics, make the driving signal transmission homogeny of IGBT pipe 10 be easy to control; The cabling of grid driving tube 40 is no longer the centralized cabling to a region, arrange a plurality of separately independently grid driving tube 40 can reduce cabling to the distance of grid driving tube 40, cabling is greatly reduced, reduce the long unsteadiness of bringing of cabling and also save the area of wiring layer simultaneously, thereby the area of the metal substrate 306 of Intelligent Power Module 1 is significantly reduced, cost is further reduced.

In conjunction with Fig. 4 to Fig. 9, a kind of manufacture method of Intelligent Power Module, comprises the following steps:

Step S11, makes metal substrate 306, and in a wherein surface coverage insulating barrier 307 of metal substrate 306, in insulating barrier 307 surfaces, lays wiring layer 308.

Step S12, a plurality of predeterminated position 308A on wiring layer 308 set IGBT pipe 20.

Step S13, magnitude setting and IGBT manage that 20 is identical and respectively as the grid driving tube 40 of the drive circuit of corresponding IGBT pipe 20, wherein, the drive end of each grid driving tube 40 is identical with the track lengths of the grid electrical connection of IGBT pipe 20.

Step S14, between wiring layer 308, IGBT pipe 20 and grid driving tube 40, connection metal line 305 is to form preinstalled circuit.

In a preferred embodiment, step S11 specifically comprises: a plurality of grid driving tubes 40 are arranged at respectively on the emitter of a plurality of IGBT pipes 20; The drive end of grid driving tube 40 (HO, LO) is connected with the grid of IGBT pipe 20 by metal wire 305.In other embodiments, grid driving tube 40 can be arranged at a side of corresponding IGBT pipe 20, also can guarantee that the cabling of managing 20 grids from grid driving tube 40 to IGBT can accomplish identically, and also can not increase the cabling of Intelligent Power Module 1.

In a preferred embodiment, in step S12, on wiring layer 308, for being set, the predeterminated position 308A of IGBT pipe 20 is arranged in array.It is 20 identical that electricity predeterminated position 308A quantity and IGBT manage, and in order to the fixing circuit pattern of IGBT pipe 20, and this is managed 20 predeterminated position 308A and be arranged in array for IGBT is set.Specifically, according to the shape of metal substrate 306 and the set position of pin 301, be to reduce the wiring length of pin 301 and IGBT pipe 20, grid driving tube 40, predeterminated position 308A can be that matrix is arranged, circular array is arranged etc.

In a preferred embodiment, a plurality of grid driving tubes 40 comprise HVIC pipe and the LVIC pipe that quantity is equal.With reference to 3(A) and 3(B), grid driving tube 40 is 6, label is 41,42,43,44,45,46 respectively, comprising 41,42,43 and 3

LVIC pipes

44,45,46 of 3 HVIC pipes.

In a preferred embodiment, after step S12, also comprise: magnitude setting is managed 20 identical FRD pipes with IGBT, and the plurality of FRD pipe is managed 20 by IGBT respectively and is fixed on wiring layer 308.

Wherein, the collector electrode, anode that the negative electrode of FRD pipe is fixed on to IGBT pipe 20 managed 20 emitter by metal wire 305 and IGBT and is electrically connected to.

In another embodiment, the manufacture method of the utility model Intelligent Power Module comprises: the operation that insulating barrier 307 is set on aluminium base 306 surfaces; On the surface of insulating barrier 307307, form wiring layer 3308 operation; Operation at wiring layer a plurality of IGBT pipe of 308 configuration and FRD pipe 10; On IGBT pipe 20, configure the operation of HVIC pipe 41～43 and LVIC pipe 44～46; The operation that connects each circuit element and wiring 306 with metal wire 305; Baking molded operation; The operation that pin 301 is carried out to moulding; Carry out the operation of functional test.

The details of each operation below illustrating.

The first operation: with reference to Fig. 4, this operation is the operation that forms insulating barrier 307 and connect up at insulating barrier 307 circuit forming surfaces on sizeable aluminium base.

First, with reference to vertical view 4(A) and end view 4(B), circuit layout is as required prepared sizeable aluminium base 306, can choose the size of 44mm * 20mm for general Intelligent Power Module, and corrosion protection processing is carried out on two sides.On the surface at least simultaneously of aluminium base, be provided with insulating barrier 307.In addition, on the surface of insulating barrier 307, be pasted with the Copper Foil as conductive pattern.Then the Copper Foil of this operation manufacture is carried out to etching, remove partly Copper Foil, form wiring layer 308.

At this, the formation of sizeable aluminium base can form by directly the aluminium of 1m * 1m being carried out to the mode such as die-cut, also can form V groove by the aluminium of first 1m * 1m, and the mode of then shearing forms.

The second operation: with reference to Fig. 5, this operation is the operation that IGBT pipe 20, FRD pipe 10 and pin 301 are installed on wiring layer 308.

With reference to vertical view 5(A) and end view 5(B), by scolders such as tin creams, IGBT pipe 20, FRD pipe 10 and pin 301 are arranged on to the assigned position of wiring layer 308.

At this, in order to reduce the voidage after tin cream welding, and carry out cost control, can consider to use the reflow ovens with nitrogen protection to carry out tin cream and fix, if cost allows, also can consider to use the form of vacuum back-flow.The melt temperature of tin cream is generally 280 ℃ of left and right.

The 3rd operation: with reference to figure 6, this operation is that the operation of HVIC pipe and LVIC pipe is installed in the emitter-base bandgap grading position of IGBT pipe 20.

First, with reference to vertical view 6(A) and end view 6(B), HVIC pipe is installed on IGBT pipe 20, on three IGBT pipes 20, HVIC pipe is installed, on three IGBT pipes 20, LVIC pipe is installed.At this, if the back side of HVIC pipe and LVIC pipe is not the electrodes such as GND, can use the elargol etc. with conductivity as immobilization material, if HVIC manages and the back side of the LVIC pipe electrode such as be GND, can use dielectric red glue etc. as immobilization material.

Secondly, by the form of 175 ℃ of bakings, by elargol or red adhesive curing, at this, the curing temperature of elargol or red glue is 170 ℃ of left and right, is about 2 hours curing time.Because baking temperature is far below the melt temperature of tin cream, so in this heating process, can not have influence on the welding effect of IGBT pipe 20, FRD pipe 10 and pin 301.

The 4th operation: with reference to figure 7, this operation is to form at circuit element and 308, wiring layer the operation being electrically connected to by metal wire 305.

With reference to vertical view 7(A) and end view 7(B), carry out IGBT pipe 20, FRD pipe 10, grid driving tube 40(HVIC pipe and LVIC pipe) be connected with nation's line (metal wire 305) of wiring layer 308.

According to through-current capability needs, select the aluminum steel of suitable diameter as nation's alignment, for the part for signal controlling, as HVIC pipe and LVIC pipe, also can consider to use the gold thread of 15 μ m or the aluminum steel of 38 μ m as nation's alignment.To power tube part, as IGBT manages the aluminum steel that 20He FRDGuan10， nation is used 200 μ m～400 μ m surely.

Consider the impact of nation's line board vibrations on nation's alignment, can use the first nation thick line mode of nation's fine rule again; For antistatic, consider, can use the first nation fine rule mode of nation's thick line again.Specifically according to the anti-static effect of the vibration amplitude of board and board nation head, determine.

The 5th operation: with reference to Fig. 8, the operation by sealant 302 sealed aluminum substrates 306 is described.

In oxygen-free environment, metal substrate 306 is toasted, baking time should not be less than 2 hours, 125 ℃ of baking temperature and selections.Metal substrate 306 conveyances that configure pin 301 are arrived to model 44 and 45.By the specific part of pin 301 is contacted with fixture 46, carry out the location of metal substrate 306.

During matched moulds, in the die cavity that is formed at mould 50 inside, place metal substrate 306, then by cast gate 53, inject sealing resin.The method sealing can adopt uses the transfer die injection mould molded or use thermosetting resin of thermosetting resin molded.And the gas of the corresponding sealing resin die cavity inside of injecting from cast gate 53 is discharged into outside by exhaust outlet 54.For the selection of cast gate 53 positions, should select not exclusively to have one side of pin 301, the top of Fig. 7 (A), for the selection of exhaust outlet 54, should select to have completely one side of pin 301, and Fig. 7's (A) is following.

At this, the back side of metal substrate 306 is close on counterdie 45, but still have between the back side and drag 45 that a small amount of sealing resin enters into metal substrate 306, therefore, after the demoulding, need to carry out laser-induced thermal etching or grinding, a small amount of sealing resin that remains in metal substrate 306 back sides is removed, the back side of metal substrate 306 is exposed from sealing resin, and the above part in the back side of metal substrate 306 is sealed resin-sealed.

The 6th operation: with reference to Fig. 8, this operation is the operation of carrying out pin 11 Trim Moldings and carrying out functions of modules test, above-mentioned Intelligent Power Module 1 goods after operation thus complete.

In front operation, be that transfer die mould dress operation makes other parts except pin 301 all sealed resin-sealed.This operation, according to the length and the shape needs that use, for example, is cut off external pin 301 in the position of dotted line, sometimes also can be bent into definite shape, is convenient to follow-up assembling.

Then module is put into testing equipment, carry out conventional electric parameters testing, generally comprise the test events such as dielectric voltage withstand, quiescent dissipation, delay time, test passes person is finished product.

Utilize above-mentioned operation, complete the Intelligent Power Module 1 shown in Fig. 2.

These are only preferred embodiment of the present utility model, not in order to limit the utility model, all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.

Claims

1. an Intelligent Power Module, is characterized in that, comprising:

Metal substrate, wherein a surface coverage has insulating barrier;

Wiring layer, is formed at described surface of insulating layer;

2. Intelligent Power Module as claimed in claim 1, is characterized in that, a plurality of described grid driving tubes are arranged at respectively on the emitter of a plurality of described IGBT pipes, and the drive end of described grid driving tube is connected with the grid of described IGBT pipe by described metal wire.

3. Intelligent Power Module as claimed in claim 1 or 2, is characterized in that, on described wiring layer, for the predeterminated position of described IGBT pipe is set, is arranged in array.

4. Intelligent Power Module as claimed in claim 1, is characterized in that, a plurality of described grid driving tubes comprise HVIC pipe and the LVIC pipe that quantity is equal.

5. the Intelligent Power Module as described in claim 1,2 or 4, is characterized in that, described grid driving tube is 6, comprising 3 HVIC pipes and 3 LVIC pipes.

6. the Intelligent Power Module as described in claim 1,2 or 4, is characterized in that, also comprises that quantity and described IGBT manage identical FRD pipe, and a plurality of FRD pipes are fixed on described wiring layer by described IGBT pipe respectively.

7. Intelligent Power Module as claimed in claim 6, is characterized in that, collector electrode, anode that the negative electrode of described FRD pipe is fixed on described IGBT pipe are electrically connected to the emitter of described IGBT pipe by described metal wire.

8. Intelligent Power Module as claimed in claim 1, is characterized in that, also comprises pin, and described wiring layer comprises that described pin is connected and stretches out from described substrate with described pin pad near the pin pad of the marginal surface of described metal substrate.

9. Intelligent Power Module as claimed in claim 1, is characterized in that, also comprises sealant, and described sealant is coated on all surface being coated with in described substrate beyond the surf zone that described insulating barrier is relative.