CN104112740A - Intelligent power module and manufacturing method thereof - Google Patents

Intelligent power module and manufacturing method thereof Download PDF

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Publication number
CN104112740A
CN104112740A CN201310435355.9A CN201310435355A CN104112740A CN 104112740 A CN104112740 A CN 104112740A CN 201310435355 A CN201310435355 A CN 201310435355A CN 104112740 A CN104112740 A CN 104112740A
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CN
China
Prior art keywords
pipe
igbt
power module
intelligent power
igbt pipe
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Granted
Application number
CN201310435355.9A
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Chinese (zh)
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CN104112740B (en
Inventor
冯宇翔
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GD Midea Air Conditioning Equipment Co Ltd
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Guangdong Midea Refrigeration Equipment Co Ltd
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Priority to CN201310435355.9A priority Critical patent/CN104112740B/en
Priority to PCT/CN2013/090357 priority patent/WO2015039398A1/en
Publication of CN104112740A publication Critical patent/CN104112740A/en
Application granted granted Critical
Publication of CN104112740B publication Critical patent/CN104112740B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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Abstract

The invention is suitable for the technology of electronic devices, and provides an intelligent power module and a manufacturing method thereof. The intelligent power module comprises a metal substrate of which one surface is covered with an insulating layer; a circuit wiring layer which is formed on the surface of the insulating layer; multiple IGBT tubes which are arranged on the preset positions of the circuit wiring layer; gate electrode drive tubes which are identical with the IGBT tubes in number, wherein each gate electrode drive tube respectively acts as a drive circuit for the corresponding IGBT tube, and the drive end of each gate electrode drive tube is the same with wiring length of gate electrode electric connection of the IGBT tubes; and a metal wire which is connected between the circuit wiring layer, the IGBT tubes and the gate electrode drive tubes so that a preset circuit is formed. Wiring from the gate electrode drive tubes to the IGBT tube gate electrodes is ensured to be identical so that dynamic characteristics of the IGBT tubes are enabled to be identical without additional arrangement of wiring of the intelligent power module.

Description

Intelligent Power Module and manufacture method thereof
Technical field
The invention belongs to electronic device manufacturing process field, relate in particular to a kind of Intelligent Power Module and manufacture method thereof.
Background technology
Intelligent Power Module (Intelligent Power Module, IPM) is a kind of by the power drive series products of power electronics and integrated circuit technique combination.IPM integrates device for power switching and high-voltage driving circuit, and in keep overvoltage, overcurrent and the failure detector circuit such as overheated.IPM receives on the one hand MCU(Microprogrammed Control Unit, microprogram control unit) control signal, drive subsequent conditioning circuit work, send the state detection signal of system back to MCU on the other hand.Compared with the discrete scheme of tradition, IPM wins increasing market with advantages such as its high integration, high reliability, be particularly suitable for frequency converter and the various inverter of drive motors, it is frequency control, metallurgical machinery, electric traction, servo-drive, the desirable power electronic device of one of frequency-conversion domestic electric appliances.
The circuit theory of existing Intelligent Power Module 100 is as shown in Fig. 1 (A):
HVIC(High Voltage Integrated Circuit, high voltage integrated circuit) the VCC end of pipe 101 is as the low-pressure area power supply anode VDD of Intelligent Power Module 100, and VDD is generally 15V; The HIN1 end of HVIC pipe 101 is gone up brachium pontis input UHIN mutually as the U of Intelligent Power Module 100; The HIN2 end of HVIC pipe 101 is gone up brachium pontis input VHIN mutually as the V of Intelligent Power Module 100; The HIN3 end of HVIC pipe 101 is gone up brachium pontis input WHIN mutually as the W of Intelligent Power Module 100; The LIN1 end of HVIC pipe 101 descends brachium pontis input ULIN mutually as the U of Intelligent Power Module 100; The LIN2 end of HVIC pipe 101 descends brachium pontis input VLIN mutually as the V of Intelligent Power Module 100; The LIN3 end of HVIC pipe 101 descends brachium pontis input WLIN mutually as the W of Intelligent Power Module 100.At this, the U of Intelligent Power Module 100, V, the input of W three-phase Liu road receive the input signal of 0～5V.
The GND end of HVIC pipe 101 is as the low-pressure area power supply negative terminal COM of Intelligent Power Module 100; The VB1 end of HVIC pipe 101 is as the U phase higher-pressure region power supply anode UVB of Intelligent Power Module 100; The HO1 end of HVIC pipe 101 go up brachium pontis IGBT(Insulated Gate Bipolar Translator, insulated gate gate pole transistor mutually with U) to manage 121 grid connected; The VS1 end of HVIC pipe 101 and emitter, the FRD(Fast Recovery Diode of IGBT pipe 121, fast recovery diode) pipe 111 anode, U descend the negative electrode of collector electrode, FRD pipe 114 of brachium pontis IGBT pipe 124 connected mutually, and as the U phase higher-pressure region power supply negative terminal UVS of Intelligent Power Module 100; The VB2 end of HVIC pipe 101 is as the U phase higher-pressure region power supply anode VVB of Intelligent Power Module 100; The grid that HO3 end and the V of HVIC pipe 101 goes up brachium pontis IGBT pipe 123 is mutually connected; Anode, the V of the VS2 end of HVIC pipe 101 and the emitter of IGBT pipe 122, FRD pipe 112 descend collector electrode, the FRD of brachium pontis IGBT pipe 125 to manage 115 negative electrode to be connected mutually, and as the W phase higher-pressure region power supply negative terminal VVS of Intelligent Power Module 100; The VB3 end of HVIC pipe 101 is as the W phase higher-pressure region power supply anode WVB of Intelligent Power Module 100; The grid that HO3 end and the W of HVIC pipe 101 goes up brachium pontis IGBT pipe 123 is mutually connected; Anode, the W of the VS3 end of HVIC pipe 101 and the emitter of IGBT pipe 123, FRD pipe 113 descend collector electrode, the FRD of brachium pontis IGBT pipe 126 to manage 116 negative electrode to be connected mutually, and as the W phase higher-pressure region power supply negative terminal WVS of Intelligent Power Module 100; The LO1 end of HVIC pipe 101 is connected with the grid of IGBT pipe 124; The LO2 end of HVIC pipe 101 is connected with the grid of IGBT pipe 125; The LO3 end of HVIC pipe 101 is connected with the grid of IGBT pipe 126; The emitter of IGBT pipe 124 is connected with the anode of FRD pipe 114, and as the U phase low reference voltage end UN of Intelligent Power Module 100; The emitter of IGBT pipe 125 is connected with the anode of FRD pipe 115, and as the V phase low reference voltage end VN of Intelligent Power Module 100; The emitter of IGBT pipe 126 is connected with the anode of FRD pipe 116, and as the W phase low reference voltage end WN of Intelligent Power Module 100.
The collector electrode of the collector electrode of IGBT pipe 121, the negative electrode of FRD pipe 111, IGBT pipe 122, the negative electrode of FRD pipe 112, the collector electrode of IGBT pipe 123, the negative electrode of FRD pipe 113 are connected, and as the high voltage input P of Intelligent Power Module 100, P generally meets 300V.
The effect of HVIC pipe 101 is: the logical signal of 0～5V of input HIN1, HIN2, HIN3 and LIN1, LIN2, LIN3 is passed to respectively to output HO1, HO2, HO3 and LO1, LO2, LO3, wherein HO1, HO2, HO3 are the logical signals of VS～VS+15V, and LO1, LO2, LO3 are the logical signals of 0～15V.
The structure of existing Intelligent Power Module 100 is described with reference to Fig. 1 (B).Fig. 1 (C) is the vertical view after the taking-up potting resin of Intelligent Power Module 100, and Fig. 1 (D) is X-X ' the line profile of Fig. 1 (B).
Intelligent Power Module 100 has following structure, and it comprises: circuit substrate 206; Be located at the wiring 208 forming on the lip-deep insulating barrier 207 of circuit substrate 206; Be fixed on the components and parts such as IGBT on wiring 208 pipe 121～126, FRD pipe 111～116, HVIC pipe 101; Connect the metal wire 205 of components and parts and wiring 208; The pin 201 being connected with wiring 208; The sealed resin 202 of at least one side of circuit substrate 206 seals, and in order to improve sealing, circuit substrate 206 all can be sealed, and in order to improve thermal diffusivity, can make the back side of aluminium base 206 be exposed under outside state and seal.
Can find out from Fig. 1 (C), existing Intelligent Power Module is managed by 6 pieces of IGBT of 1 piece of HVIC management and control system, causes cabling very long, easily causes interference between circuit; And, due to not identical from the distance of HVIC pipe to 6 piece IGBT pipe, cause the driving signal transmission homogeny of 6 pieces of IGBT pipes to be difficult to control; In addition, because the wiring on substrate too much certainly will increase the area of substrate, cause the area of existing Intelligent Power Module to strengthen, increased the manufacturing cost of Intelligent Power Module, affected Intelligent Power Module popularizing in low side field; In addition, because needs reserve wiring area, cause components and parts spacing larger, make between components and parts to produce the nation's line connecting by metal wire longer, affected the reliability of nation's line, and have to have in molding process and cause the risk of breasting the tape.
Summary of the invention
The present invention is intended to solve the deficiencies in the prior art, provide a kind of and ensure that cabling is few, the driving signal of power device transmits identical Intelligent Power Module, can reduce the area of Intelligent Power Module, ensure that it drives identical being easy to of signal transmission to control, and improves reliability and performance.
The present invention is achieved in that a kind of Intelligent Power Module, comprising:
Metal substrate, wherein a surface coverage has insulating barrier;
Wiring layer, is formed at described surface of insulating layer;
Multiple IGBT pipes, are arranged on the predeterminated position on described wiring layer;
Grid driving tube, quantity is identical with described IGBT pipe, and each described grid driving tube is respectively as the drive circuit of corresponding described IGBT pipe, and the drive end of each described grid driving tube is identical with the track lengths that the grid of described IGBT pipe is electrically connected;
Metal wire, is connected between described wiring layer, IGBT pipe and grid driving tube to form preinstalled circuit.
The beneficial effect of above-mentioned Intelligent Power Module is: by separately independently grid driving tube be configured on corresponding IGBT pipe, the cabling from grid driving tube to IGBT tube grid can be accomplished identical, thereby can effectively ensure the homogeny of IGBT pipe dynamic characteristic; And the cabling of grid driving tube is no longer the centralized cabling in a region, arrange multiple separately independently grid driving tube can reduce the distance of cabling to grid driving tube, cabling is greatly reduced, reduce the long unsteadiness of bringing of cabling and also save the area of wiring layer simultaneously, thereby the area of the metal substrate of Intelligent Power Module is significantly reduced, cost is further reduced.
The manufacture method that another object of the present invention is to provide a kind of Intelligent Power Module, comprises the following steps:
Make metal substrate, and in a wherein surface coverage insulating barrier of described metal substrate, lay wiring layer in described surface of insulating layer;
Multiple predeterminated positions on described wiring layer arrange IGBT pipe;
Magnitude setting is identical with described IGBT pipe and respectively as the grid driving tube of the drive circuit of corresponding described IGBT pipe, wherein, the drive end of each described grid driving tube is identical with the track lengths that the grid of described IGBT pipe is electrically connected;
Between described wiring layer, IGBT pipe and grid driving tube, connection metal line is to form preinstalled circuit.
The manufacture method of above-mentioned Intelligent Power Module is manufactured above-mentioned Intelligent Power Module due to assembling IGBT pipe and is assembled grid driving tube and uses different operations to carry out, thereby can be fixed this two classes circuit element by different scolders and welding parameter, can reduce to a certain extent the parameter request to welding procedure, there is positive role to improving welding quality and solder yield, and reduced cabling, reduce to have in molding process and caused the risk of breasting the tape.
Brief description of the drawings
The circuit theory diagrams that Fig. 1 (A) is existing Intelligent Power Module;
The front elevation that Fig. 1 (B) is existing Intelligent Power Module;
Vertical view structural representation after the taking-up potting resin that Fig. 1 (C) is existing Intelligent Power Module;
Fig. 1 (D) is X-X ' the line profile of Fig. 1 (B);
The circuit theory diagrams of the Intelligent Power Module that Fig. 2 (A) provides for one embodiment of the invention;
The front elevation of the Intelligent Power Module that Fig. 2 (B) provides for one embodiment of the invention;
Fig. 2 (C) is the vertical view structural representation of Fig. 2 (B);
Fig. 2 (D) is the profile along X-X ' line in the Fig. 2 (B) in one embodiment of the invention;
The circuit theory diagrams of the Intelligent Power Module that Fig. 3 (A) provides for another embodiment of the present invention;
The vertical view structural representation of the Intelligent Power Module that Fig. 3 (B) provides for another embodiment of the present invention;
Fig. 3 (C) is the profile in another embodiment of the present invention;
Fig. 4 (A), 4(B) be the operation that substrate, insulating barrier and wiring layer are set that the embodiment of the present invention provides;
Fig. 5 (A), 5(B) operation that IGBT pipe, FRD pipe, pin are set that provides for the embodiment of the present invention;
Fig. 6 (A), 6(B) operation that grid driving tube is set that provides for first embodiment of the invention;
Fig. 7 (A), 7(B) carry out nation's line connection and matting for what the embodiment of the present invention provided;
The sealing process that Fig. 8 provides for the embodiment of the present invention;
The operation of carrying out pin Trim Molding and testing that Fig. 9 provides for the embodiment of the present invention.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
In conjunction with Fig. 2 (A), 2(B), 2(C), 2(D), in one embodiment, Intelligent Power Module 1 comprises that metal substrate 306, insulating barrier 307, wiring layer 308, multiple IGBT pipe 20, quantity and IGBT manage that 20 identical FRD manage 10, quantity and IGBT manage 20 identical grid driving tube 40 and metal wires 305.
A metal substrate 306 wherein surface coverage has insulating barrier 307.Wiring layer 308 is formed at the surface of insulating barrier 307.Multiple IGBT pipe 20 predeterminated position 308A that are arranged on wiring layer 308; It is 20 identical that grid driving tube 40 quantity and IGBT manage, and each grid driving tube 40 is respectively as the drive circuit of corresponding IGBT pipe 20, and the drive end of each grid driving tube 40 (HO, LO) is identical with the track lengths that the grid of IGBT pipe 20 is electrically connected.Metal wire 305 is connected between wiring layer 308, IGBT pipe 20 and grid driving tube 40 to form preinstalled circuit.The cabling of managing 20 grids from grid driving tube 40 to IGBT can be accomplished identical, thereby can effectively ensure that IGBT manages the homogeny of 20 dynamic characteristics.
In a preferred embodiment, multiple grid driving tubes 40 are arranged at respectively on the emitter of multiple IGBT pipes 20, and the drive end (HO, LO as shown in Figure 2 (A) shows) of grid driving tube 40 is connected with the grid of IGBT pipe 20 by metal wire 305.In other embodiments, grid driving tube 40 can be arranged at a side of corresponding IGBT pipe 20, also can ensure that the cabling of managing 20 grids from grid driving tube 40 to IGBT can accomplish identically, and also can not increase the cabling of Intelligent Power Module 1.
Further, Intelligent Power Module 1 also comprises pin 301, at the edge of metal substrate 306, is formed with the pin pad 308B for configuration pin 301.Wiring layer 308 comprises that pin 301 is connected and stretches out from metal substrate with pin pad 308B near the pin pad 308B of the marginal surface of metal substrate 306.According to function needs, multiple pin pad 308B for configuration pin 301 also can be set near one side of metal substrate 306, both sides, three limits or four limits.
In a preferred embodiment, multiple grid driving tubes 40 comprise that quantity equates for driving the HVIC pipe of upper brachium pontis and driving the LVIC(Low Voltage Integrated Circuits of lower brachium pontis, low-voltage ic) pipe.With reference to 3(A) and 3(B), grid driving tube 40 is 6, label is 41,42,43,44,45,46 respectively, comprising 41,42,43 and 3 LVIC pipes 44,45,46 of 3 HVIC pipes.
In a preferred embodiment, on wiring layer 308, be arranged in array for the predeterminated position 308A that IGBT pipe 20 is set.It is 20 identical that electricity predeterminated position 308A quantity and IGBT manage, and in order to the circuit pattern of fixing IGBT pipe 20, and this is used for arranging IGBT and manages 20 predeterminated position 308A and be arranged in array.Specifically, according to the shape of metal substrate 306 and the set position of pin 301, be the wiring length that reduces pin 301 and IGBT pipe 20, grid driving tube 40, predeterminated position 308A can be that matrix is arranged, circular array is arranged etc.
As Fig. 2 (A), 2(C) as shown in, in the present embodiment, Intelligent Power Module 1 also comprises that quantity and IGBT manage 20 identical FRD pipes 10, multiple FRD pipes 10 are managed 20 by IGBT respectively and are fixed on wiring layer 308.Further, the negative electrode of FRD pipe 10 is fixed on the collector electrode of IGBT pipe 20, the anode of FRD pipe 10 is electrically connected with the emitter of IGBT pipe 20 by metal wire 305.
IGBT pipe 20 and FRD pipe 10 are fixed on the circuit that forms regulation on wiring layer 308.At this, the installation that faces down that faces up, has collector electrode with emitter and grid of 6 pieces of IGBT pipes 20, the installation that faces down that faces up, has negative electrode with anode of FRD pipe 1
Wiring layer 308 is made up of metals such as copper, and wiring layer 308 is formed at the certain bits on metal substrate 306 according to default circuit; According to power needs, can be designed to the thickness of 0.035mm or 0.07mm etc., for general Intelligent Power Module, pay the utmost attention to and be designed to 0.07mm, in the present embodiment, adopt the thickness of 0.07mm.
With reference to figure 3(A), 3(B) and 3(C), further illustrate the embodiment of Intelligent Power Module 1 with interlock circuit principle.
HVIC pipe 41 is fixed on IGBT pipe 21, and HVIC pipe 42 is fixed on IGBT pipe 22, and HVIC pipe 43 is fixed on IGBT pipe 23, and LVIC pipe 44 is fixed on IGBT pipe 24, and LVIC pipe 45 is fixed on IGBT pipe 25, and LVIC pipe 46 is fixed on IGBT pipe 26.At this, HVIC pipe 41,42,43 and LVIC pipe 44,45,46 positions that are fixed on IGBT pipe are the emitter of IGBT pipe, the IGBT that is 30A for general rated current pipe 20, and the area of emitter can not be less than 6mm 2, for general single armed HVIC pipe 41,42,43 and single armed LVIC pipe 44,45,46, area can not be greater than mm 2.
U goes up brachium pontis output circuit 41(HVIC pipe 41 mutually), V go up brachium pontis output circuit 41(HVIC pipe 42 mutually), W go up brachium pontis output circuit 41(HVIC pipe 43 mutually) be that in 3 pieces of drivings, brachium pontis IGBT manages 21,22,23 single armed HVIC and manages, their structure is identical, effect is that the logical signal of 0～5V of input HIN is passed to output (being drive end) HO, and wherein HO is the logical signal of VS～VS+15V; Because the meeting of VS changes between 0～300V, so U goes up mutually brachium pontis output circuit, V and goes up mutually brachium pontis output circuit, W and go up mutually brachium pontis output circuit and need high voltage bearing flow technique to realize, sometimes in order to reduce costs, use the BCD technique of 650V, sometimes in order to reduce pressure-resistance structure design difficulty, use the SOI technique of 650V.
It is the single armed LVIC pipe of brachium pontis IGBT pipe 24,25,26 under 3 pieces of drivings that U descends brachium pontis output circuit (LVIC pipe 44), V to descend mutually brachium pontis output circuit (LVIC pipe 45), W to descend mutually brachium pontis output circuit (LVIC pipe 46) mutually, their structure is identical, effect is that the logical signal of 0～5V of input LIN is passed to output (being drive end) LO, and wherein LO is the logical signal of 0～15V; Descend mutually brachium pontis output circuit, W to descend mutually brachium pontis output circuit to realize without high voltage bearing flow technique because U descends brachium pontis output circuit, V mutually, in order to reduce costs, LVIC pipe can be by the low pressure process such as BIPOLAR or COMS realization cheaply.
U goes up mutually VCC, V that brachium pontis output circuit 41, U descend brachium pontis output circuit 44 mutually and goes up mutually VCC, W that brachium pontis output circuit 42, V descend bridge output circuit 45 mutually and go up mutually brachium pontis output circuit 43, W and descend mutually the VCC of brachium pontis output circuit 44 to be connected, and as the vdd terminal of Intelligent Power Module 1, VDD is the low-pressure area power supply of Intelligent Power Module 1, and VDD is generally 15V.
U goes up mutually the HIN end of brachium pontis output circuit 41 and goes up mutually brachium pontis input UHIN as the U of Intelligent Power Module 1; V goes up mutually the HIN end of brachium pontis output circuit 42 and goes up mutually brachium pontis input VHIN as the V of Intelligent Power Module 1; W goes up mutually the HIN end of brachium pontis output circuit 43 and goes up mutually brachium pontis input WHIN as the W of Intelligent Power Module 1; U descends the LIN end of brachium pontis output circuit 44 to descend mutually brachium pontis input ULIN as the U of Intelligent Power Module 1 mutually; V descends the LIN end of brachium pontis output circuit 45 to descend mutually brachium pontis input VLIN as the V of Intelligent Power Module 1 mutually; W descends the LIN end of brachium pontis output circuit 46 to descend mutually brachium pontis input WLIN as the W of Intelligent Power Module 1 mutually; At this, the U of Intelligent Power Module 1, V, the input of W three-phase Liu road receive the input signal of 0～5V.
U goes up the GND that the GND that GND holds, V goes up bridge output circuit 42 mutually holds, W the goes up bridge output circuit 43 mutually end of bridge output circuit 41 mutually, the GND that the GND that GND holds, V descends bridge output circuit 45 mutually holds, W descends bridge output circuit 46 mutually that U descends bridge output circuit 44 mutually holds connected, and hold as the COM of Intelligent Power Module 1, COM is the negative terminal of VDD power supply.
U goes up the VB end of brachium pontis output circuit 41 mutually as the U phase higher-pressure region power supply anode UVB of Intelligent Power Module 1; V goes up the VB end of brachium pontis output circuit 42 mutually as the V phase higher-pressure region power supply anode VVB of Intelligent Power Module 1; W goes up the VB end of brachium pontis output circuit 41 mutually as the W phase higher-pressure region power supply anode WVB of Intelligent Power Module 1; The HO end that U goes up brachium pontis output circuit 41 is mutually connected with the grid of IGBT pipe 21, U goes up mutually the VS end of brachium pontis output circuit 41 and the emitter-base bandgap grading of IGBT pipe 21, the anode of FRD pipe 11, the collector electrode of IGBT pipe 24, the negative electrode of FRD pipe 14 are connected, and as the U phase higher-pressure region power supply negative terminal UVS of Intelligent Power Module 1; The HO end that V goes up brachium pontis output circuit 42 is mutually connected with the grid of IGBT pipe 22, V goes up mutually the VS end of brachium pontis output circuit 42 and the emitter-base bandgap grading of IGBT pipe 22, the anode of FRD pipe 12, the collector electrode of IGBT pipe 25, the negative electrode of FRD pipe 15 are connected, and as the V phase higher-pressure region power supply negative terminal VVS of Intelligent Power Module 1.
The HO end that W goes up brachium pontis output circuit 43 is mutually connected with the grid of IGBT pipe 23, W goes up mutually the VS end of brachium pontis output circuit 43 and the emitter-base bandgap grading of IGBT pipe 23, the anode of FRD pipe 13, the collector electrode of IGBT pipe 26, the negative electrode of FRD pipe 16 are connected, and as the W phase higher-pressure region power supply negative terminal WVS of Intelligent Power Module 1.
The collector electrode of the collector electrode of IGBT pipe 21, the negative electrode of FRD pipe 11, IGBT pipe 22, the negative electrode of FRD pipe 12, the collector electrode of IGBT pipe 23, the negative electrode of FRD pipe 13 are connected, and as the high voltage input P of Intelligent Power Module 1, high voltage input P generally meets 300V.
U descends the LO end of brachium pontis output circuit 44 to be connected with the grid of IGBT pipe 24 mutually, and the emitter-base bandgap grading of IGBT pipe 24 and FRD manage 14 anode and be connected, and as the U phase low reference voltage end UN of Intelligent Power Module 1; V descends the LO end of brachium pontis output circuit 45 to be connected with the grid of IGBT pipe 25 mutually, and the emitter-base bandgap grading of IGBT pipe 25 and FRD manage 15 anode and be connected, and as the V phase low reference voltage end VN of Intelligent Power Module 1; W descends the LO end of brachium pontis output circuit 46 to be connected with the grid of IGBT pipe 26 mutually, and the emitter-base bandgap grading of IGBT pipe 26 and FRD manage 16 anode and be connected, and as the W phase low reference voltage end WN of Intelligent Power Module 1.
With reference to Fig. 3 (B), 3(C), the structure chart of the Intelligent Power Module 1 of another embodiment.
Intelligent Power Module 1 of the present invention has the metal substrate 306 being formed with from the teeth outwards by insulating barrier 307, be configured in the wiring layer 308 on insulating barrier 307, be configured in the IGBT pipe 21 on wiring layer 308, IGBT pipe 22, IGBT pipe 23, IGBT pipe 24, IGBT pipe 25, IGBT pipe 26 and FRD pipe 11, FRD pipe 12, FRD pipe 13, FRD pipe 14, FRD pipe 15, FRD pipe 16, be configured in the pin 301 of the marginal portion of wiring layer 308, for connecting the metal wire 305 that makes to form between above-mentioned each element electrical connection, sealing resin 302 with this circuit of sealing and at least complete covering metal substrate 306 upper surface all elements.
With an embodiment, the each inscape of Intelligent Power Module 1 is described below.
Metal substrate 306 is the rectangular plates that are made up of the aluminium of the materials such as 1100.In order to improve the corrosion resistance of sheet material, effects on surface carries out anodic oxidation sometimes, in order to save manufacturing cost, to the less demanding application scenario of corrosion resistance, also can only carry out wire drawing processing to aluminium material surface at some.The thickness of metal substrate 306 can be selected 1.5mm.
Insulating barrier 307 is formed at metal substrate 306 at least one surface, and high concentration is filled the filler raising thermal conductivities such as aluminium oxide in the resin materials such as epoxy resin.
Wiring layer 308 is made up of metals such as copper, is formed at the ad-hoc location on metal substrate 306, according to power needs, can be designed to the thickness of 0.035mm or 0.07mm etc., for general Intelligent Power Module, pay the utmost attention to and be designed to 0.07mm, in the present embodiment, adopt the thickness of 0.07mm.Especially, at the edge of metal substrate 306, be formed with the wiring layer 308 for configuration pin 301.At this, multiple wiring layers 308 for configuration pin 301 are set near the both sides of metal substrate 306, according to function needs, multiple wiring layers 308 for configuration pin 301 also can be set near one side of metal substrate 306, three limits, four limits.
IGBT pipe 21～26 and FRD pipe 11～16 are fixed on the circuit that forms regulation on wiring layer 308.At this, the installation that faces down that faces up, has collector electrode with emitter-base bandgap grading and grid of 6 pieces of IGBT pipes 21～26, the installation that faces down that faces up, has negative electrode with anode of FRD pipe 11～16.
HVIC pipe 41 is fixed on IGBT pipe 21, and HVIC pipe 42 is fixed on IGBT pipe 22, and HVIC pipe 43 is fixed on IGBT pipe 23, and LVIC pipe 44 is fixed on IGBT pipe 24, and LVIC pipe 45 is fixed on IGBT pipe 25, and LVIC pipe 46 is fixed on IGBT pipe 26.At this, the position that HVIC pipe 21,22,23 and LVIC pipe 24,25,26 are fixed on IGBT pipe 21～26 is the emitter of IGBT pipe 21～26, the IGBT that is 30A for general rated current pipe, and the area of emitter can not be less than 6mm 2, for general single armed HVIC pipe 21,22,23 and single armed LVIC pipe 24,25,26, area can not be greater than 2mm 2.
Metal wire 15 can be aluminum steel, gold thread or copper cash, surely make to set up electrical connection between each circuit element (the IGBT pipe 20 as shown in Fig. 2 (C), FRD pipe 10, grid driving tube 40) and wiring layer 308 by nation, sometimes also for making pin 301 and wiring layer 308 set up electrical connection.
Pin 301 is fixed on the wiring layer 308 of being located at metal substrate 306 edges, and it has the effect of for example inputting, exporting with outside.At this, be designed to relative both sides and be provided with many pins 301, pin 301 and wiring layer 308 are by the electrical binding agent welding of the conductions such as scolding tin.The general metals such as copper that adopt of pin 301 are made, and copper surface is by chemical plating and electroplate and form one deck nickeltin layer, and the thickness of alloy-layer is generally 5 μ m, and coating can be protected the copper oxidation that is not corroded, and can improve weldability.
Sealant 302 can use thermosetting resin molded by transfer die mode, also can use thermoplastic resin molded by injecting mould mode.At this, all elements on complete sealing metal substrate 306 upper surfaces of sealant 302, and require high Intelligent Power Module for compactness, generally can also carry out encapsulation process to the entirety of metal substrate 306, in the present embodiment, in order to improve the thermal diffusivity of Intelligent Power Module, the back side of metal substrate 306 expose.
With reference to 3(C), above-mentioned Intelligent Power Module 1 by separately independently grid driving tube 40 be configured on corresponding IGBT pipe 20, managing the track lengths of 20 grids from grid driving tube 40 to IGBT can accomplish identical, thereby can effectively ensure that IGBT manages the homogeny of 20 dynamic characteristics, make the driving signal transmission homogeny of IGBT pipe 10 be easy to control; The cabling of grid driving tube 40 is no longer the centralized cabling to a region, arrange multiple separately independently grid driving tube 40 can reduce the distance of cabling to grid driving tube 40, cabling is greatly reduced, reduce the long unsteadiness of bringing of cabling and also save the area of wiring layer simultaneously, thereby the area of the metal substrate 306 of Intelligent Power Module 1 is significantly reduced, cost is further reduced.
In conjunction with Fig. 4 to Fig. 9, a kind of manufacture method of Intelligent Power Module, comprises the following steps:
Step S11, makes metal substrate 306, and in a wherein surface coverage insulating barrier 307 of metal substrate 306, lays wiring layer 308 in insulating barrier 307 surfaces.
Step S12, the multiple predeterminated position 308A on wiring layer 308 arrange IGBT pipe 20.
Step S13, magnitude setting and IGBT manage that 20 is identical and respectively as the grid driving tube 40 of the drive circuit of corresponding IGBT pipe 20, wherein, the drive end of each grid driving tube 40 is identical with the track lengths that the grid of IGBT pipe 20 is electrically connected.
Step S14, between wiring layer 308, IGBT pipe 20 and grid driving tube 40, connection metal line 305 is to form preinstalled circuit.
In a preferred embodiment, step S11 specifically comprises: multiple grid driving tubes 40 are arranged at respectively on the emitter of multiple IGBT pipes 20; The drive end of grid driving tube 40 (HO, LO) is connected with the grid of IGBT pipe 20 by metal wire 305.In other embodiments, grid driving tube 40 can be arranged at a side of corresponding IGBT pipe 20, also can ensure that the cabling of managing 20 grids from grid driving tube 40 to IGBT can accomplish identically, and also can not increase the cabling of Intelligent Power Module 1.
In a preferred embodiment, in step S12, on wiring layer 308, be arranged in array for the predeterminated position 308A that IGBT pipe 20 is set.It is 20 identical that electricity predeterminated position 308A quantity and IGBT manage, and in order to the circuit pattern of fixing IGBT pipe 20, and this is used for arranging IGBT and manages 20 predeterminated position 308A and be arranged in array.Specifically, according to the shape of metal substrate 306 and the set position of pin 301, be the wiring length that reduces pin 301 and IGBT pipe 20, grid driving tube 40, predeterminated position 308A can be that matrix is arranged, circular array is arranged etc.
In a preferred embodiment, multiple grid driving tubes 40 comprise HVIC pipe and the LVIC pipe that quantity is equal.With reference to 3(A) and 3(B), grid driving tube 40 is 6, label is 41,42,43,44,45,46 respectively, comprising 41,42,43 and 3 LVIC pipes 44,45,46 of 3 HVIC pipes.
In a preferred embodiment, after step S12, also comprise: magnitude setting is managed 20 identical FRD pipes with IGBT, and the plurality of FRD pipe is managed 20 by IGBT respectively and is fixed on wiring layer 308.
Wherein, the collector electrode, anode that the negative electrode of FRD pipe is fixed on to IGBT pipe 20 managed 20 emitter by metal wire 305 and IGBT and is electrically connected.
In another embodiment, the manufacture method of Intelligent Power Module of the present invention comprises: the operation that insulating barrier 307 is set on aluminium base 306 surfaces; On the surface of insulating barrier 307307, form wiring layer 3308 operation; Configure the operation of multiple IGBT pipes and FRD pipe 10 at wiring layer 308; On IGBT pipe 20, configure the operation of HVIC pipe 41～43 and LVIC pipe 44～46; Connect the operation of each circuit element and wiring 306 with metal wire 305; Baking molded operation; The operation that pin 301 is carried out to moulding; Carry out the operation of functional test.
The below details of each operation of explanation.
The first operation: with reference to Fig. 4, this operation is to form insulating barrier 307 operation in insulating barrier 307 circuit forming surface wirings on sizeable aluminium base.
First, with reference to vertical view 4(A) and end view 4(B), circuit layout is as required prepared sizeable aluminium base 306, can choose the size of 44mm × 20mm for general Intelligent Power Module, and corrosion protection processing is carried out on two sides.On the surface at least simultaneously of aluminium base, be provided with insulating barrier 307.In addition, be pasted with the Copper Foil as conductive pattern on the surface of insulating barrier 307.Then the Copper Foil of this operation manufacture is carried out to etching, remove partly Copper Foil, form wiring layer 308.
At this, the formation of sizeable aluminium base can form by directly the aluminium of 1m × 1m being carried out to the mode such as die-cut, also can form V groove by the aluminium of first 1m × 1m, and the mode of then shearing forms.
The second operation: with reference to Fig. 5, this operation is the operation that IGBT pipe 20, FRD pipe 10 and pin 301 are installed on wiring layer 308.
With reference to vertical view 5(A) and end view 5(B), by scolders such as tin creams, IGBT pipe 20, FRD pipe 10 and pin 301 are arranged on to the assigned position of wiring layer 308.
At this, in order to reduce the voidage after tin cream welding, and carry out cost control, can consider to use the reflow ovens with nitrogen protection to carry out tin cream and fix, if cost allows, also can consider to use the form of vacuum back-flow.The melt temperature of tin cream is generally 280 DEG C of left and right.
The 3rd operation: with reference to figure 6, this operation is the operation that HVIC pipe and LVIC pipe are installed in the emitter-base bandgap grading position of IGBT pipe 20.
First, with reference to vertical view 6(A) and end view 6(B), HVIC pipe is installed on IGBT pipe 20, on three IGBT pipes 20, HVIC pipe is installed, on three IGBT pipes 20, LVIC pipe is installed.At this, if the back side of HVIC pipe and LVIC pipe is not the electrodes such as GND, can use the elargol etc. with conductivity as immobilization material, if HVIC manages and the back side of the LVIC pipe electrode such as be GND, can use dielectric red glue etc. as immobilization material.
Secondly,, by the form of 175 DEG C of bakings, by elargol or red adhesive curing, at this, the curing temperature of elargol or red glue is 170 DEG C of left and right, is about 2 hours curing time.Because baking temperature is far below the melt temperature of tin cream, so in this heating process, can not have influence on the welding effect of IGBT pipe 20, FRD pipe 10 and pin 301.
The 4th operation: with reference to figure 7, this operation is the operation that forms electrical connection by metal wire 305 between circuit element and wiring layer 308.
With reference to vertical view 7(A) and end view 7(B), carry out IGBT pipe 20, FRD pipe 10, grid driving tube 40(HVIC pipe and LVIC pipe) be connected with nation's line (metal wire 305) of wiring layer 308.
According to through-current capability needs, select the aluminum steel of suitable diameter as nation's alignment, for the part for signal controlling, as HVIC pipe and LVIC pipe, also can consider to use the gold thread of 15 μ m or the aluminum steel of 38 μ m as nation's alignment.To power tube part, as IGBT pipe 20 and FRD pipe 10, nation is used the aluminum steel of 200 μ m～400 μ m surely.
Consider that nation's line board shakes the impact on nation's alignment, can use the first nation thick line mode of nation's fine rule again; Consider for antistatic, can use the first nation fine rule mode of nation's thick line again.Specifically determine according to the anti-static effect of the vibration amplitude of board and board nation head.
The 5th operation: with reference to Fig. 8, the operation by sealant 302 sealed aluminum substrates 306 is described.
In oxygen-free environment, metal substrate 306 is toasted, baking time should not be less than 2 hours, 125 DEG C of baking temperature and selections.Metal substrate 306 conveyances that configure pin 301 are arrived to model 44 and 45.Contact with fixture 46 by the specific part that makes pin 301, carry out the location of metal substrate 306.
When matched moulds, in the die cavity that is formed at mould 50 inside, place metal substrate 306, then inject sealing resin by cast gate 53.The method sealing can adopt and use the transfer die injection mould molded or use thermosetting resin of thermosetting resin molded.And the gas of the corresponding sealing resin die cavity inside of injecting from cast gate 53 is discharged into outside by exhaust outlet 54.For the selection of cast gate 53 positions, should select not exclusively to have one side of pin 301, i.e. the top of Fig. 7 (A), for the selection of exhaust outlet 54, should select to have completely one side of pin 301, and Fig. 7's (A) is following.
At this, the back side of metal substrate 306 is close on counterdie 45, but still have between the back side and drag 45 that a small amount of sealing resin enters into metal substrate 306, therefore, after the demoulding, need to carry out laser-induced thermal etching or grinding, a small amount of sealing resin that remains in metal substrate 306 back sides is removed, the back side of metal substrate 306 is exposed from sealing resin, and the sealed resin sealing of the above part in the back side of metal substrate 306.
The 6th operation: with reference to Fig. 8, this operation is the operation of carrying out pin 11 Trim Moldings and carrying out functions of modules test, above-mentioned Intelligent Power Module 1 goods after operation thus complete.
Be that transfer die mould dress operation makes all sealed resin sealings of other parts except pin 301 in front operation.This operation, according to the length and the shape needs that use, for example, is cut off external pin 301 in the position of dotted line, sometimes also can be bent into definite shape, is convenient to follow-up assembling.
Then module is put into testing equipment, carry out conventional electric parameters testing, generally comprise the test events such as dielectric voltage withstand, quiescent dissipation, delay time, test passes person is finished product.
Utilize above-mentioned operation, complete the Intelligent Power Module 1 shown in Fig. 2.
These are only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.

Claims (12)

1. an Intelligent Power Module, is characterized in that, comprising:
Metal substrate, wherein a surface coverage has insulating barrier;
Wiring layer, is formed at described surface of insulating layer;
Multiple IGBT pipes, are arranged on the predeterminated position on described wiring layer;
Grid driving tube, quantity is identical with described IGBT pipe, and each described grid driving tube is respectively as the drive circuit of corresponding described IGBT pipe, and the drive end of each described grid driving tube is identical with the track lengths that the grid of described IGBT pipe is electrically connected;
Metal wire, is connected between described wiring layer, IGBT pipe and grid driving tube to form preinstalled circuit.
2. Intelligent Power Module as claimed in claim 1, is characterized in that, multiple described grid driving tubes are arranged at respectively on the emitter of multiple described IGBT pipes, and the drive end of described grid driving tube is connected with the grid of described IGBT pipe by described metal wire.
3. Intelligent Power Module as claimed in claim 1 or 2, is characterized in that, on described wiring layer, is arranged in array for the predeterminated position that described IGBT pipe is set.
4. Intelligent Power Module as claimed in claim 1, is characterized in that, multiple described grid driving tubes comprise HVIC pipe and the LVIC pipe that quantity is equal.
5. the Intelligent Power Module as described in claim 1,2 or 4, is characterized in that, described grid driving tube is 6, comprising 3 HVIC pipes and 3 LVIC pipes.
6. the Intelligent Power Module as described in claim 1,2 or 4, is characterized in that, also comprises that quantity and described IGBT manage identical FRD pipe, and multiple FRD pipes are fixed on described wiring layer by described IGBT pipe respectively.
7. Intelligent Power Module as claimed in claim 6, is characterized in that, collector electrode, anode that the negative electrode of described FRD pipe is fixed on described IGBT pipe are electrically connected with the emitter of described IGBT pipe by described metal wire.
8. a manufacture method for Intelligent Power Module, is characterized in that, comprises the following steps:
Make metal substrate, and in a wherein surface coverage insulating barrier of described metal substrate, lay wiring layer in described surface of insulating layer;
Multiple predeterminated positions on described wiring layer arrange IGBT pipe;
Magnitude setting is identical with described IGBT pipe and respectively as the grid driving tube of the drive circuit of corresponding described IGBT pipe, wherein, the drive end of each described grid driving tube is identical with the track lengths that the grid of described IGBT pipe is electrically connected;
Between described wiring layer, IGBT pipe and grid driving tube, connection metal line is to form preinstalled circuit.
9. the manufacture method of Intelligent Power Module as claimed in claim 8, is characterized in that, described magnitude setting is identical with described IGBT pipe and comprise as the step of the grid driving tube of the drive circuit of corresponding described IGBT pipe respectively:
Multiple described grid driving tubes are arranged at respectively on the emitter of multiple described IGBT pipes;
The drive end of described grid driving tube is connected with the grid of described IGBT pipe by described metal wire.
10. the manufacture method of Intelligent Power Module as claimed in claim 8 or 9, it is characterized in that, the multiple predeterminated positions that are set forth on described wiring layer arrange in the step of IGBT pipe, on described wiring layer, are arranged in array for the predeterminated position that described IGBT pipe is set.
The manufacture method of 11. Intelligent Power Module as claimed in claim 8, is characterized in that, multiple described grid driving tubes comprise HVIC pipe and the LVIC pipe that quantity is equal.
The manufacture method of 12. Intelligent Power Module as described in claim 8 or 11, is characterized in that, the multiple predeterminated positions on be set forth in described wiring layer also comprise after arranging the step of IGBT pipe:
Magnitude setting is managed identical FRD pipe with described IGBT, and the plurality of FRD pipe is fixed on described wiring layer by described IGBT pipe respectively;
Wherein, the collector electrode, anode that the negative electrode of described FRD pipe are fixed on to described IGBT pipe are electrically connected with the emitter of described IGBT pipe by described metal wire.
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