CN109560693A

CN109560693A - Electric appliance, power device and forming method thereof

Info

Publication number: CN109560693A
Application number: CN201811640650.7A
Authority: CN
Inventors: 冯宇翔
Original assignee: Midea Group Co Ltd; Guangdong Midea Refrigeration Equipment Co Ltd
Current assignee: Midea Group Co Ltd; GD Midea Air Conditioning Equipment Co Ltd
Priority date: 2018-12-29
Filing date: 2018-12-29
Publication date: 2019-04-02

Abstract

This application discloses a kind of electric appliance, power device and forming method thereof, the power device, comprising: substrate；It is arranged in the first of the first side of substrate to bridge arm switching tube in third, first to third lower bridge arm switching tube, first to bridge arm high-voltage drive in third, first to third lower bridge arm low-voltage driver, pfc circuit, wherein, first is connected with bridge arm switching tube on first to third respectively to bridge arm high-voltage drive in third, first is connected with first to third lower bridge arm switching tube respectively to third lower bridge arm low-voltage driver, first is made to bridge arm high-voltage drive in third by BCD or SOI technology, first is made to third lower bridge arm low-voltage driver by BIPOLAR or COMS technique, so as to by introducing high-low pressure driver, the area of power device ontology can utmostly be reduced, and the availability and reliability of power device are improved under the premise of overall plan cost is not increased.

Description

Electric appliance, power device and forming method thereof

Technical field

This application involves power device technology field, in particular to a kind of power device, a kind of formation side of power device Method and a kind of electric appliance.

Background technique

Intelligent power module, i.e. IPM (Intelligent Power Module) are a kind of by power electronics and integrated electricity The power drive class product (power device) that road technique combines.Intelligent power module is device for power switching and high-voltage driving circuit It integrates, and interior keeps the fault detection circuits such as overvoltage, overcurrent and overheat.On the one hand intelligent power module receives The control signal of MCU (Micro Controller Unit, micro-control unit), driving subsequent conditioning circuit work, on the other hand will The state detection signal of system sends MCU back to.Compared with traditional discrete scheme, intelligent power module is with its high integration, highly reliable The advantages such as property win increasing market, are particularly suitable for the frequency converter and various inverters of driving motor, are frequency conversion tune Speed, metallurgical machinery, electric propulsion, servo-drive, frequency-conversion domestic electric appliances a kind of desired power level electronic device.

The intelligent power module of existing convertible frequency air-conditioner be can be seen that from Fig. 1 a~1e by 1 piece of HVIC (High Voltage Integrated Circuit, high voltage integrated circuit) 7 pieces of IGBT (Insulated Gate of the control of pipe 101 BIPOLAR Transistor, insulated gate bipolar transistor) pipe 121~127, although meeting the requirement of efficiency, The cabling of HVIC pipe to IGBT pipe is very long, and interference is be easy to cause between route, makes its functional reliability be difficult to improve, and due to route The more area that will definitely increase power device ontology, increases the manufacturing cost of intelligent power module, influences intelligent power module In the universal of low side field.

Summary of the invention

The embodiment of the present application solves in the prior art by providing a kind of power device using 1 piece 7 pieces of system of HVIC control The lower technical problem of the area increase of power device ontology caused by IGBT pipe, higher cost, reliability.

The embodiment of the present application provides a kind of power device, comprising: substrate；It is arranged on the first of first side of substrate Bridge arm switching tube on bridge arm switching tube to third；Bridge under first lower bridge arm switching tube to third of first side of substrate is set Arm switch pipe；Bridge arm high-voltage drive, institute on bridge arm high-voltage drive to third are set on the first of first side of substrate State on first on bridge arm high-voltage drive to third bridge arm high-voltage drive respectively with described first on bridge arm switching tube to third Upper bridge arm switching tube is connected；The first lower bridge arm low-voltage driver to the third lower bridge arm low pressure that first side of substrate is arranged in is driven Dynamic device, the first lower bridge arm low-voltage driver to third lower bridge arm low-voltage driver respectively with the first lower bridge arm switching tube It is connected to third lower bridge arm switching tube, wherein bridge arm high-voltage drive is logical on bridge arm high-voltage drive to third on described first Cross (BIPOLAR-CMOS-DMOS) or the production of SOI (Silicon-on-insulator) technique, the first lower bridge arm low pressure Driver is made to third lower bridge arm low-voltage driver and the low-voltage driver by BIPOLAR or COMS technique；Setting exists The pfc circuit of first side of substrate.

According to one embodiment of the application, the substrate is metal substrate or ceramic substrate.

According to one embodiment of the application, when the substrate is metal substrate, further includes: cover the substrate first The insulating layer of side.

According to one embodiment of the application, above-mentioned power device, further includes: dissipating for described substrate second side is set Hot device.

According to one embodiment of the application, the substrate and the radiator are made of wet type carbon composite, And the substrate and the radiator are integrally formed.

According to one embodiment of the application, bridge arm switching tube includes first on bridge arm switching tube to third on described first IGBT pipe is managed to the 3rd IGBT, and bridge arm high-voltage drive is arranged described on bridge arm high-voltage drive to third on described first On the emitter-base bandgap grading of first IGBT pipe to the 3rd IGBT pipe, the first lower bridge arm switching tube to third lower bridge arm switching tube includes 4th IGBT pipe to the 6th IGBT is managed, and the first lower bridge arm low-voltage driver to third lower bridge arm low-voltage driver is arranged On the emitter-base bandgap grading of the 4th IGBT pipe to the 6th IGBT pipe.

According to one embodiment of the application, the pfc circuit, including switching tube, the low pressure being connected with the switching tube Driver and silicon carbide SBD pipe.

One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:

1, the application realizes that the LVIC pipe can lead to by LVIC pipe by introducing high-low pressure driver, low-voltage driver It crosses the low pressure process such as the BIPOLAR or COMS of low cost and realizes that high-voltage drive is realized by HVIC pipe, the HVIC Guan Zetong Cross the realization of the high-pressure process such as BCD or SOI, HVIC independent pipe or the configuration of LVIC pipe on corresponding IGBT pipe, in this way from The cabling of HVIC pipe or LVIC pipe to IGBT tube grid can be accomplished unanimously, to can effectively ensure that 6 pieces of IGBT for inversion The consistency of pipe dynamic characteristic, the rising edge and failing edge of 1 piece of IGBT for Active PFC can accomplish it is very steep, and And the area of wiring can be largely saved, reduce the area of power device ontology substantially, reduces the cost of power device.

2, the silicon carbide SBD pipe of Active PFC, not only speed is fast, and does not have reverse recovery time, even if work Work will not cause EMI (Electromagnetic Interference, electromagnetic interference) to perplex under high frequency, make to mention The frequency of high power factor correcting circuit is possibly realized.

3, since the working junction temperature of silicon carbide SBD pipe is very high, small heat-dissipating device can be used for big aluminium radiator, make this The weight of the power device of application is greatly reduced, and material cost, transportation cost also decline to a great extent therewith.

Detailed description of the invention

Fig. 1 a is the circuit diagram of intelligent power module in the related technology；

Fig. 1 b is the schematic diagram of the X-X ' line of intelligent power module in the related technology；

Fig. 1 c is in the related technology along the sectional view of the X-X ' line of Fig. 1 b；

Fig. 1 d is the top view for being provided with sealing resin in the related technology；

Fig. 1 e is the top view for being provided with radiator in the related technology；

Fig. 2 a is the circuit diagram of the power device of the application one embodiment；

Fig. 2 b is the schematic diagram of the X-X ' line of the power device of the application one embodiment；

Fig. 2 c is the sectional view of the X-X ' line for prolonging Fig. 2 b of the application one embodiment；

Fig. 2 d is the top view after the sealing resin for removing power device；

Fig. 3 a~3b is the top view and side view of the process one of the power device of the application one embodiment；

Fig. 4 a~4b is the top view and side view of the process two of the power device of the application one embodiment；

Fig. 5 a~5b is the top view and side view of the process three of the power device of the application one embodiment；

Fig. 6 a~6b is the top view and side view of the process four of the power device of the application one embodiment；

Fig. 7 is the schematic diagram of the process five of the power device of the application one embodiment；

Fig. 8 a~8b is the top view and side view of the process six of the power device of the application one embodiment；

Fig. 9 is the process flow chart of the power device of the application one embodiment；And

Figure 10 is the flow chart of the stroke method of the power device of the embodiment of the present application.

Specific embodiment

Power device such as intelligence before introducing the embodiment of the present application, under first Fig. 1 a~1e being combined to introduce in the related technology Power module 100.

A referring to Fig.1, the power supply anode VCC of HVIC pipe 101 is as intelligent power module in intelligent power module 100 100 low-pressure area power supply anode VDD, VDD is generally 15V；The end HIN1 of HVIC pipe 101 is as intelligent power module 100 U phase on bridge arm input terminal UHIN；The end HIN2 of HVIC pipe 101 is as bridge arm input terminal in the V phase of intelligent power module 100 VHIN；The end HIN3 of HVIC pipe 101 is as bridge arm input terminal WHIN in the W phase of intelligent power module 100；HVIC pipe 101 U phase lower bridge arm input terminal ULIN of the end LIN1 as intelligent power module 100；The end LIN2 of HVIC pipe 101 is as intelligent power The V phase lower bridge arm input terminal VLIN of module 100；W phase lower bridge arm of the end LIN3 of HVIC pipe 101 as intelligent power module 100 Input terminal WLIN；Input terminal PFCIN of the end PIN of HVIC pipe 101 as the part PFC of intelligent power module 100；Here, intelligence U, V, W three-phase of energy power module 100, the input of seven tunnel PFC Duan receive the input signal of 0V or 5V；The GND of HVIC pipe 101 Hold the low-pressure area power supply negative terminal COM as intelligent power module 100.

U phase higher-pressure region power supply anode UVB of the end VB1 of HVIC pipe 101 as intelligent power module 100；HVIC pipe 101 end HO1 is connected with the grid of bridge arm IGBT pipe 121 in U phase；The emitter-base bandgap grading of the end VS1 of HVIC pipe 101 and IGBT pipe 121, The anode of FRD (Fast Recovery Diode, fast recovery diode) pipe 111, U phase lower bridge arm IGBT pipe 124 collector, The cathode of FRD pipe 114, the other end of capacitor 131 are connected, and the U phase higher-pressure region power supply as intelligent power module 100 Negative terminal UVS.

V phase higher-pressure region power supply anode VVB of the end VB2 of HVIC pipe 101 as intelligent power module 100；HVIC pipe 101 end HO2 is connected with the grid of bridge arm IGBT pipe 122 in V phase；The emitter-base bandgap grading of the end VS2 of HVIC pipe 101 and IGBT pipe 122, The anode of FRD pipe 112, the collector of V phase lower bridge arm IGBT pipe 125, the cathode of FRD pipe 115, the other end of capacitor 132 are connected, And the W phase higher-pressure region power supply negative terminal VVS as intelligent power module 100.

W phase higher-pressure region power supply anode WVB of the end VB3 of HVIC pipe 101 as intelligent power module 100；HVIC pipe 101 end HO3 is connected with the grid of bridge arm IGBT pipe 123 in W phase；The emitter-base bandgap grading of the end VS3 of HVIC pipe 101 and IGBT pipe 123, The anode of FRD pipe 113, the collector of W phase lower bridge arm IGBT pipe 126, the cathode of FRD pipe 116, the other end of capacitor 133 are connected, And the W phase higher-pressure region power supply negative terminal WVS as intelligent power module 100.

The end LO1 of HVIC pipe 101 is connected with the grid of U phase lower bridge arm IGBT pipe 124；The end LO2 of HVIC pipe 101 and V phase The grid of lower bridge arm IGBT pipe 125 is connected；The grid with W phase lower bridge arm IGBT pipe 126 is managed in HVIC in the end LO3 of HVIC pipe 101 It is connected；The emitter-base bandgap grading of IGBT pipe 124 is connected with the anode of FRD pipe 114, and the U phase low reference voltage as intelligent power module 100 Hold UN；The emitter-base bandgap grading of IGBT pipe 125 is connected with the anode of FRD pipe 115, and the V phase low reference voltage as intelligent power module 100 Hold VN；The emitter-base bandgap grading of IGBT pipe 126 is connected with the anode of FRD pipe 116, and the W phase low reference voltage as intelligent power module 100 Hold WN；The emitter-base bandgap grading of IGBT pipe 127 is connected with the anode of FBD pipe 117, and joins as the PFC low-voltage of intelligent power module 100 Examine end N；The collector of IGBT pipe 127 is connected with the cathode of FRD pipe 117, and connects the anode of high current diode 118；IGBT pipe 121 collector, the cathode of FRD pipe 111, the collector of IGBT pipe 122, the cathode of FRD pipe 112, IGBT pipe 123 current collection Pole, the cathode of FRD pipe 113 are connected, and the cathode for connecing high current diode 118 is defeated as the high voltage of intelligent power module 100 Enter and hold P, P generally meets 300V.

The effect of HVIC pipe 101 is:

The logical signal of 0~5V of input terminal HIN1, HIN2, HIN3, LIN1, LIN2, LIN3, PFCIN are passed to respectively Output end HO1, HO2, HO3, LO1, LO2, LO3, POUT, wherein HO1, HO2, HO3 are the logical signals of VS~VS+15V, LO1, LO2, LO3, POUT are the logical signals of 0~15V.

Referring to Fig. 1 b~1e, intelligent power module 100 is had the following structure comprising: circuit substrate (such as aluminum substrate) 206；Insulating layer 207 on 206 surface of circuit substrate；The wiring 208 formed on insulating layer 207；It is fixed on electricity The components such as IGBT pipe 121~127, FRD pipe 111~118, HVIC pipe 101 in road wiring 208；Connect component and circuit The metal wire 205 of wiring 208；The pin 201 being connect with wiring 208；At least one side of circuit substrate 206 is by sealing resin Circuit substrate 206 can all be sealed to improve leakproofness, in order to improve thermal diffusivity, can make circuit substrate 206 by 202 sealings The back side be exposed to outside in the state of be sealed.

The manufacturing method of intelligent power module 100 is:

Aluminium is formed to appropriately sized as circuit substrate 206, the setting insulating layer 207 on 206 surface of circuit substrate, and Copper foil is formed on insulating layer 207, so that copper foil is formed wiring 208 by etching；It is applied in the specific position of wiring 208 Fill tin cream；Component and pin 201 are placed on tin cream；Solidify tin cream by Reflow Soldering, by component and pin 201 It is fixed on wiring 208；By cleaning ways such as spray, ultrasounds, the scaling powder remained on circuit substrate 206 is removed； By bonding metal wire 205, makes between component, formed and connect between component and wiring 208；By using thermoplastic resin Injection mould molding or using thermosetting resin transmitting mould mode, above-mentioned element is sealed；By 201 redundance of pin It cuts off and forms required shape；Necessary test is carried out by test equipment, test passes person just becomes intelligent power module 100。

Can be seen that intelligent power module used in convertible frequency air-conditioner in the related technology from Fig. 1 c is managed by 1 piece of HVIC 7 pieces of IGBT pipes are made, although meeting the requirement of efficiency, the cabling of HVIC pipe to IGBT pipe is very long, be easy to cause between route Interference causes the inductance of external inductance to be generally designed very big, leads to assembly difficulty so that working frequency is difficult to improve, Also improve cost.

Also, since the distance from HVIC pipe to the IGBT pipe of 6 pieces of U, V, W phases is inconsistent, lead to the letter of 6 pieces of IGBT pipes Number transmission consistency is difficult to control, and the line-spacing that HVIC pipe 101 controls IGBT pipe 127 is longer, also leads to the high speed of IGBT pipe 127 Delay and rising edge, failing edge when switching is all relatively slow.

In addition, leading to intelligence in the related technology because the wiring on substrate certainly will excessively increase the area of circuit substrate The area of energy power module increases, and increases the manufacturing cost of intelligent power module, affects intelligent power module and leads in low side It popularizes in domain.

In addition, causing distance between component larger due to needing to reserve wiring area, making component by metal wire Between generate connection nation's line it is longer, affect the reliability of nation's line, for chips such as third generation semiconductors, produce offline rate very It is high.

Also, due to PFC part and Converting Unit on same circuit substrate, due to silicon-based diode Reverse recovery when Between it is larger, be easy to be coupled out current noise in ground wire, cause false triggering, so entire wiring cannot be too close, circuit base Plate suqare not can be carried out excessive miniaturization processing.

Also, since the structure of intelligent power module in the related technology causes distributed inductance, capacitor larger, switch is caused to damage Consumption is very high, and intelligent power module is generated heat very serious in actual work in the related technology, due to the working junction temperature one of silicon semiconductor As no more than 175 DEG C, so thick and heavy circuit substrate 206 is needed to help IGBT pipe and the heat dissipation of FRD pipe as radiator, for The biggish application of power such as drives the occasion of frequency converting air-conditioner compressor also to need on circuit substrate 106 as shown in fig. le External bigger aluminium radiator 220, increases material cost, transportation cost and the application cost of intelligent power module, hinders Intelligent power module is popularized.

In order to solve deficiency in the prior art, present applicant proposes a kind of high performance power devices, can be by drawing Enter high-low pressure driver, can utmostly reduce the area of power device ontology, under the premise of overall plan cost is not increased Improve the availability and reliability of power device.

In order to better understand the above technical scheme, the exemplary reality of the application is more fully described below with reference to accompanying drawings Apply example.Although showing the exemplary embodiment of the application in attached drawing, it being understood, however, that may be realized in various forms this Shen Please and should not be limited by the embodiments set forth herein.It is to be able to thoroughly understand this on the contrary, providing these embodiments Application, and scope of the present application can be fully disclosed to those skilled in the art.

In order to better understand the above technical scheme, in conjunction with appended figures and specific embodiments to upper Technical solution is stated to be described in detail.

Referring to Fig. 2 a~2d, the power device of the embodiment of the present application, comprising: bridge arm switching tube 01 on substrate 306, first, Bridge arm switching tube 02 on second, bridge arm switching tube 03 in third, the first lower bridge arm switching tube 04, the second lower bridge arm switching tube 05, Bridge arm high-voltage drive 42 on bridge arm high-voltage drive 41, second on third lower bridge arm switching tube 06, first, bridge arm is high in third Press driver 43, the first lower bridge arm low-voltage driver 44, the second lower bridge arm low-voltage driver 45, the second lower bridge arm low-voltage driver 45 and pfc circuit 07.

Wherein, on first on bridge arm switching tube to third the setting of bridge arm switching tube 01,02 and 03 in 306 first side of substrate, Bridge arm high pressure is arranged on 306 first side of substrate, first in first lower bridge arm switching tube to third lower bridge arm switching tube 04,05 and 06 Bridge arm high drive is arranged on 306 first side of substrate, first in bridge arm high-voltage drive 41,42 and 43 on driver to third On device to third bridge arm high-voltage drive 41,42 and 43 respectively with first on bridge arm switching tube 01 on bridge arm switching tube to third, 02 is connected with 03, and the first lower bridge arm low-voltage driver to third lower bridge arm low-voltage driver 44,45 and 46 is arranged in substrate 306 First side, the first lower bridge arm low-voltage driver to third lower bridge arm low-voltage driver 44,45 and 46 are opened with the first lower bridge arm respectively Guan Guanzhi third lower bridge arm switching tube 04,05 is connected with 06, and pfc circuit 07 is arranged in 306 first side of substrate, wherein on first Bridge arm high-voltage drive 41,42 and 43 is made by BCD or SOI technology on bridge arm high-voltage drive to third, the first lower bridge arm Low-voltage driver is made to third lower bridge arm low-voltage driver 44,45 and 46 by BIPOLAR or COMS technique.

In one embodiment of the application, bridge arm switching tube 01,02 and 03 is wrapped on bridge arm switching tube to third on first The first IGBT pipe to the 3rd IGBT pipe 21,22,23 and the first silicon carbide SBD pipe are included to third silicon carbide SBD pipe 11,12,13, Bridge arm high-voltage drive 41,42 and 43 is arranged in the first IGBT pipe to third on bridge arm high-voltage drive to third on first On the emitter-base bandgap grading of IGBT pipe 21,22 and 23, the first lower bridge arm switching tube to third lower bridge arm switching tube 04,05 and 06 includes the Four IGBT pipes are to the 6th IGBT pipe 24,25,26 and the 4th silicon carbide SBD pipe to the 6th silicon carbide SBD pipe 14,15,16, and first Lower bridge arm low-voltage driver is arranged to third lower bridge arm low-voltage driver 44,45 and 46 manages in the 4th IGBT pipe to the 6th IGBT 24, on 25 and 26 emitter-base bandgap grading.

In one embodiment of the application, pfc circuit 07, comprising: switching tube 27, the low pressure being connected with switching tube 27 are driven Dynamic device 47 and silicon carbide SBD pipe 17.Wherein, silicon carbide SBD pipe 17 is low-power silicon carbide SBD pipe, and low-voltage driver 47 passes through The production of BIPOLAR or COMS technique.

Present context is further illustrated below with reference to the specific embodiment of the application.

Referring to Fig. 2 a, bridge arm high-voltage drive 42 on bridge arm high-voltage drive 41, second, bridge arm high pressure in third on first Driver 43 is 3 pieces of single armed HVIC pipes for respectively driving the first IGBT pipe 21, the 2nd IGBT pipe 22, the 3rd IGBT pipe 23, they Structure it is identical, effect is that the logical signal of 0~5V of input terminal HIN is passed to output end HO, and wherein HO is VS~VS+ The logical signal of 15V；Since VS is changed between 0~300V, so bridge arm on bridge arm high-voltage drive 41, second on first Bridge arm high-voltage drive 43 needs high voltage bearing flow technique to realize on high-voltage drive 42, third, sometimes for reducing cost, The SOI technology of 650V is used sometimes for pressure-resistance structure design difficulty is reduced using the BCD technique of 650V.

First lower bridge arm low-voltage driver 44, the second lower bridge arm low-voltage driver 45, third lower bridge arm low-voltage driver 46 It is 3 pieces of single armeds for respectively driving the first lower bridge arm switching tube 04, the second lower bridge arm switching tube 05, third lower bridge arm switching tube 06 LVIC pipe, their structure is identical, and effect is that the logical signal of 0~5V of input terminal LIN is passed to output end LO, Middle LO is the logical signal of 0~15V；Due to the first lower bridge arm low-voltage driver 44, the second lower bridge arm low-voltage driver 45, third Lower bridge arm low-voltage driver 46 does not need high voltage bearing flow technique and realizes, sometimes for cost is reduced, uses 20V's BIPOLAR technique uses the BCD technique of 20V sometimes for consistency is improved.

Low-voltage driver 47 is the single armed LVIC for driving the switching tube (such as IGBT pipe) 27 in pfc circuit 07, in order to save Cost carries out flow using the BIPOLAR technique of 20V, for power consumption consideration is reduced, can also use the COMS technique of 20V.

Bridge arm high-voltage drive 41 on first, the VCC of the first lower bridge arm low-voltage driver 44, bridge arm high drive on second Device 42, the VCC of the second lower bridge arm low-voltage driver 45, bridge arm high-voltage drive 43, third lower bridge arm low-voltage driver in third 46, the VCC of low-voltage driver 47 is connected, and the vdd terminal as power device 10, and VDD is the low-pressure area power supply of power device 10 Power supply, VDD are generally 15V.

The end HIN of bridge arm high-voltage drive 41 is as bridge arm input terminal UHIN in the U phase of power device 10 on first, and second The end HIN of upper bridge arm high-voltage drive 42 is as bridge arm input terminal VHIN in the V phase of power device 10, and bridge arm high pressure is driven in third The end HIN of dynamic device 43 is as bridge arm input terminal WHIN, the LIN of the first lower bridge arm low-voltage driver 44 in the W phase of power device 10 The U phase lower bridge arm input terminal ULIN as power device 10 is held, the end LIN of the second lower bridge arm low-voltage driver 45 is as power The V phase lower bridge arm input terminal VLIN of device 10, W phase of the end LIN of third lower bridge arm low-voltage driver 46 as power device 10 Lower bridge arm input terminal WLIN, pfc circuit 07 input terminal PFCIN of the end PIN of low-voltage driver 47 as power device 10；? This, totally seven tunnels input the input signal for receiving 0~5V to U, V, W three-phase and pfc circuit 07 of power device 10.

The end GND of bridge arm high-voltage drive 41 on first, the end GND of bridge arm high-voltage drive 42 on second, bridge on second The end GND of arm high-voltage drive 42, the end GND of the first lower bridge arm low-voltage driver 44, the second lower bridge arm low-voltage driver 45 The end GND, the end GND of the second lower bridge arm low-voltage driver 45, the GND of low-voltage driver 47 are connected, and as power device 10 The end COM, COM are the negative terminal of VDD power supply.

U phase higher-pressure region power supply anode UVB of the end VB of bridge arm high-voltage drive 41 as power device 10 on first, V phase higher-pressure region power supply anode VVB of the end VB of bridge arm high-voltage drive 42 as power device 10 on second, bridge in third W phase higher-pressure region power supply anode WVB of the end VB of arm high-voltage drive 43 as power device 10, bridge arm high pressure is driven on first The end HO of dynamic device 41 is connected with the grid of the first IGBT pipe 21, the end VS of bridge arm high-voltage drive 41 and the first IGBT on first The emitter-base bandgap grading of pipe 21, the anode of the first silicon carbide SBD pipe 11, the collector of the 4th IGBT pipe 24, the 4th silicon carbide SBD pipe 14 Cathode is connected, and the U phase higher-pressure region power supply negative terminal UVS as power device 10.

The end HO of bridge arm high-voltage drive 42 is connected with the grid of the 2nd IGBT pipe 22 on second, and bridge arm high pressure is driven on second The end VS of dynamic device 42 and the emitter-base bandgap grading of the 2nd IGBT pipe 22, the anode of the second silicon carbide SBD pipe 12, the 5th IGBT pipe 25 current collection Pole, the cathode of the 5th silicon carbide SBD pipe 15 are connected, and the V phase higher-pressure region power supply negative terminal VVS as power device 10.

The end HO of bridge arm high-voltage drive 43 is connected with the grid of the 3rd IGBT pipe 23 in third, and bridge arm high pressure is driven in third The end VS of dynamic device 43 and the emitter-base bandgap grading of the 3rd IGBT pipe 23, the anode of third silicon carbide SBD pipe 13, the 6th IGBT pipe 26 current collection Pole, the cathode of the 6th silicon carbide SBD pipe 16 are connected, and the W phase higher-pressure region power supply negative terminal WVS as power device 10.

The collector of first IGBT pipe 21, the cathode of the first silicon carbide SBD pipe 11, the collector of the 2nd IGBT pipe 22, The cathode of two silicon carbide SBD pipes 12, the collector of the 3rd IGBT pipe 23, the cathode of third silicon carbide SBD pipe 13, high power carbonization The cathode of silicon SBD pipe 18 is connected, and high voltage the input terminal P, P as power device 10 generally meet 300V.

The end LO of first lower bridge arm low-voltage driver 44 is connected with the grid of the 4th IGBT pipe 24, the 4th IGBT pipe 24 Emitter-base bandgap grading is connected with the anode of the 4th silicon carbide SBD pipe 14, and the U phase low reference voltage end UN as power device 10；Under second The end LO of bridge arm low-voltage driver 45 is connected with the grid of the 5th IGBT pipe 25, the emitter-base bandgap grading and the 5th silicon carbide of the 5th IGBT pipe 25 The anode of SBD pipe 15 is connected, and the V phase low reference voltage end VN as power device 10；Third lower bridge arm low-voltage driver 46 The end LO be connected with the grid of the 6th IGBT pipe 26, the anode phase of the emitter-base bandgap grading of the 6th IGBT pipe 26 and the 6th silicon carbide SBD pipe 16 Connect, and the W phase low reference voltage end WN as power device 10.

The end POUT of low-voltage driver 47 is connected with the grid of switching tube 27, and the emitter-base bandgap grading and silicon carbide SBD of switching tube 27 are managed 17 anode is connected, the collector of switching tube 27 and cathode, the high power silicon carbide SBD pipe 18 of low-power silicon carbide SBD pipe 17 Anode be connected.

Illustrate the structure chart of the power device 10 of the embodiment of the present application referring to Fig. 2 b~2d.

In one embodiment of the application, as shown in Figure 2 d, substrate 306 can be metal substrate or ceramic substrate.Its In, when substrate 306 is metal substrate, insulating layer 307 is covered in metal surface；When substrate 306 is ceramic substrate, do not need Cover insulating layer.

As shown in Figure 2 d, above-mentioned power device, further includes: the radiator 320 of substrate second side is set.Wherein, base Plate 306 and radiator 320 can be made of wet type carbon composite, and substrate 306 and radiator 320 are integrally formed.

It is formed on the surface specifically, the power device 10 of the embodiment of the present application has by the metal of insulating layer 307 Substrate 306；Configure the wiring 308 on 10 insulating layer 307 of power device；Configuration is in 10 wiring 308 of power device On the first IGBT pipe 21, the 2nd IGBT pipe 22, the 3rd IGBT pipe 23, the 4th IGBT pipe 24, the 5th IGBT pipe the 25, the 6th IGBT pipe 26, switching tube 27, the first silicon carbide SBD pipe 11, the second silicon carbide SBD pipe 12, third silicon carbide SBD pipe the 13, the 4th Silicon carbide SBD pipe 14, the 5th silicon carbide SBD pipe 15, the 6th silicon carbide SBD pipe 16, low-power silicon carbide SBD pipe 17 and Gao Gong Rate silicon carbide SBD pipe 18；The driving circuit of HVIC pipe and LVIC on the grid of corresponding IGBT pipe is set；Configuration is in circuit The pin 301 of the marginal portion of wiring 308, for connecting the metal wire 305 between above-mentioned each circuit element and wiring 308； It seals the circuit and the sealing resin 302 of all circuit elements on metal substrate 306 is at least completely covered, for example, passing through resin Wiring 308, circuit element, metal wire 305 are sealed, substrate back is exposed；It is covered on the small heat-dissipating at 306 back side of substrate Device 320.

Illustrate each component of above-mentioned composition power device 10 below with reference to the application specific embodiment.

In one embodiment of the application, metal substrate 306 is the substrate with wet type carbon composite function 306, can be by powder and the Fiber Shape Carbon Material Compound Machining at graphite, material can tolerate 350 DEG C or more of high temperature, and can root The radiator (such as small heat-dissipating device) 320 obtained according to needing to be folded into arbitrary shape, wherein in order to improve corrosion resistance and prevent Water, surface can carry out water-proofing treatment, and metal substrate 306 and radiator 320 are made into integration, and the shape of metal substrate 306 is flat It is whole, radiator 320 in irregular shape.

In another embodiment of the application, metal substrate 306 and radiator 320 may be using different-thickness Wet type carbon composite, wherein in order to increase mechanical strength, metal substrate 306 uses thicker wet type carbon composite wood Material, thickness may be designed as 1.5mm, and in order to reduce cost and increase the density of gauffer, radiator 320 uses relatively thin wet type carbon Plain composite material, thickness may be designed as 0.5mm.

Here, metal substrate 306 is known as the back side of the metal substrate 306 of power device 10 with the one side of radiator 320, Opposite face is known as the surface of the metal substrate 306 of power device 10.Here, power device 10 cannot be completely covered in radiator 320 Metal substrate 306 the back side, the back side of metal substrate 306 edge need flow out at least 1.5mm smooth position.

The insulating layer 307 of power device 10 covers a surface of metal substrate 306, the referred to as Metal Substrate of power device 10 The front of plate 306, and the fillers such as high concentration filling aluminium oxide improve thermal conductivity in the resin materials such as epoxy resin, can also add Enter the doping such as silica, silicon nitride, silicon carbide to reach higher thermal conductivity, here, doping can be spherical shape or angular, leads to Hot pressing mode is crossed, the surface of 10 metal material carrier 30 as one kind 6 of power device is pressed together on.

The wiring 308 of power device 10 is made of metals such as copper, is formed in 10 metal material carrier 30 as one kind 6 of power device On specific position may be designed to the thickness of 0.035mm or 0.07mm etc. according to power needs, pay the utmost attention to be designed to The thickness of 0.07mm.

Particularly, it at the edge of 10 metal substrate 306 of power device, is formed with for configuring 10 pin 301 of power device 10 wiring 308 of power device.Here, multiple be used for is arranged near the both sides of the metal substrate 306 of power device 10 The wiring 308 of configuration pin 301, according to function needs, can also metal substrate 306 one side, three while, four while near set Set multiple wirings 308 for configuration pin 301.

The first IGBT pipe to the 6th IGBT pipe 21~26, switching tube 27, the first silicon carbide SBD Guan Zhi of power device 10 Six silicon carbide SBD pipes 11~16, low-power silicon carbide SBD pipe 17, high power silicon carbide SBD pipe 18 are fixed on wiring Fixed circuit is constituted on 308.Here, 7 pieces of IGBT pipes of power device 10 with emitter-base bandgap grading and grid it is face-up, there is collection The face-down installation of electrode, the face-up face-down installation with cathode with anode of silicon carbide SBD pipe, 2 pieces of silicon carbide The face-up face-down installation with cathode with anode of SBD pipe.

Bridge arm high-voltage drive 41 is fixed on the first IGBT pipe 21 on the first of power device 10, and bridge arm is high on second Pressure driver 42 is fixed on the 2nd IGBT pipe 22, and bridge arm high-voltage drive 43 is fixed on the 3rd IGBT pipe 23 in third On, the first lower bridge arm low-voltage driver 44 is fixed on the 4th IGBT pipe 24, and the second lower bridge arm low-voltage driver 45 is fixed On the 5th IGBT pipe 25, third lower bridge arm low-voltage driver 46 is fixed on the 6th IGBT pipe 26,47 quilt of low-voltage driver It is fixed on switching tube 27.Here, bridge arm high-voltage drive 41,42,43, first on bridge arm high-voltage drive to third on first Lower bridge arm low-voltage driver is to third lower bridge arm low-voltage driver 44,45,46 and low-voltage driver 47 on corresponding IGBT pipe Fixed position is the emitter-base bandgap grading of IGBT pipe, and the IGBT of general 15A and 30A is managed, the IGBT of Converting Unit pipe, i.e., the The area of one IGBT pipe to the 6th IGBT pipe 21~26, emitter-base bandgap grading will not be less than 3mm², switching tube 27 in pfc circuit 07, i.e., The area of IGBT pipe 27, emitter-base bandgap grading will not be less than 6mm², general single armed HVIC pipe and single armed LVIC are managed, area is not more than 2mm²。

The metal wire 15 of power device 10 can be aluminum steel, gold thread or copper wire, make each circuit element and circuit by bonding Electrical connection is established between wiring 308, being also used to sometimes, which establishes pin 301 and 10 wiring 308 of power device, is electrically connected Connect relationship.

The pin 301 of power device 10 is fixed on the wiring 308 at 306 edge of metal substrate, is had Such as the effect for being inputted, being exported with outside.Here, being designed to that opposite both sides are equipped with a plurality of pin 301,301 He of pin Wiring 308 passes through the welding of the conductive adhesives such as scolding tin.Pin 301 is generally made of metals such as copper, and copper surface passes through Chemical plating and plating form one layer of nickeltin layer, and the thickness of alloy-layer is generally 5 μm, and coating can protect copper not to be corroded oxygen Change, and weldability can be improved.

The resin 302 of power device 10 can be moulded by transmitting mould mode using thermosetting resin, it is possible to use injection mould Mode is moulded using thermoplastic resin.Here, all elements on 306 upper surface of metal substrate are fully sealed in resin 302, and it is right In the high power device of consistency requirements, generally processing can be also sealed to the entirety of metal substrate 306, for example, in this Shen In embodiment please, in order to improve the thermal diffusivity of power device, the back side of metal substrate 306 is exposed.

Illustrate the forming method of the power device of the embodiment of the present application referring to Fig. 3 to Fig. 9.

The details of each process described below.

First step: referring to top view 3a and side view 3b

This process is the feature process of the application, process first is that form insulating layer on sizeable radiator made of paper, And in the process of surface of insulating layer formation wiring.

Firstly, referring to top view 3a and side view 3b, circuit layout as needed prepares sizeable metal substrate 306, the size of 44mm × 20mm can be chosen for general power device, two sides carries out corrosion protection processing.In metal substrate (such as aluminium Substrate) 306 at least one side surface be equipped with insulating layer 307.In addition, the surface mount in insulating layer 307 has as conduction The copper foil of pattern.Then the copper foil that the process manufactures is etched, locally removes copper foil, form wiring 308.

Here, the formation of sizeable radiator made of paper can be by directly the side such as being punched out to the profile of 1m × 1m Formula is formed, and can also shear to be formed by the profile of first 1m × 1m.

The second step: referring to top view 4a and side view 4b

This process is installation the first IGBT pipe to the 6th IGBT pipe 21~26, switching tube 27, first on wiring 308 Silicon carbide SBD pipe is to the 6th silicon carbide SBD pipe 11~16, low-power silicon carbide SBD pipe 17,18 and of high power silicon carbide SBD pipe The process of pin 301.

Referring to top view 4a and side view 4b, by the solders such as tin cream by the first IGBT pipe to the 6th IGBT pipe 21~26, First silicon carbide SBD pipe is mounted on the specified position of wiring 308 to the 6th silicon carbide SBD pipe 11~16 and pin 301.

Here, in order to reduce the voidage after tin cream welding, and carry out cost control, it may be considered that using with nitrogen The reflow ovens of protection carry out tin cream and fix, if cost allows, it is also contemplated that using the form of vacuum back-flow.Wherein, tin cream Melt temperature be generally 280 DEG C or so.

The third step: referring to top view 5a and side view 5b

This process is the feature process of the embodiment of the present application, is the emitter-base bandgap grading in the first IGBT pipe to the 6th IGBT pipe 21~26 Bridge arm high-voltage drive 41~43, the first lower bridge arm low-voltage driver on bridge arm high-voltage drive to third in position installation first To the process of third lower bridge arm low-voltage driver 44~46 and low-voltage driver 47.

Firstly, installing bridge arm high-voltage drive on first on the first IGBT pipe 21 referring to top view 5a and side view 5b 41, bridge arm high-voltage drive 42 on second is installed on the 2nd IGBT pipe 22, bridge arm in third is installed on the 3rd IGBT pipe 23 High-voltage drive 43 installs the first lower bridge arm low-voltage driver 44 on the 4th IGBT pipe 24, installs on the 5th IGBT pipe 25 Second lower bridge arm low-voltage driver 45 installs third lower bridge arm low-voltage driver 46, in switching tube 27 on the 6th IGBT pipe 26 Upper installation low-voltage driver 47.

Here, if bridge arm high-voltage drive 41~43, the first lower bridge arm on bridge arm high-voltage drive to third on first The back side of low-voltage driver to third lower bridge arm low-voltage driver 44~46 and low-voltage driver 47 is not the electrodes such as GND, can be with Use conductive fixation glue such as elargol etc. as fixed material, if bridge on bridge arm high-voltage drive to third on first Arm high-voltage drive 41~43, the first lower bridge arm low-voltage driver to third lower bridge arm low-voltage driver 44~46 and low-voltage driving The back side of device 47 is the electrodes such as GND, and for example red glue of dielectric fixed glue etc. can be used as fixed material.

Secondly, by way of 170 DEG C -180 DEG C (preferably 175 DEG C) bakings, by elargol or red adhesive curing, here, elargol Or the solidification temperature of red glue is 170 DEG C or so, curing time is about 1-3 hours (preferably 2 hours).Because baking temperature is far below The melt temperature of tin cream, so not interfering with IGBT pipe, silicon carbide SBD pipe, SBD pipe and pin in this heating process Welding effect.

The fourth step: top view 6a and side view 6b is referred to

This process is the feature process of the embodiment of the present application, through metal wire 305 between circuit element and wiring 308 The process for forming electrical connection.

With reference to top view 6a and side view 6b, this process carries out the first IGBT pipe to the 6th IGBT pipe 21~26, switching tube 27, the first silicon carbide SBD pipe to the 6th silicon carbide SBD pipe 11~16, low-power silicon carbide SBD pipe 17, high power silicon carbide SBD Bridge arm high-voltage drive 41~43, the first lower bridge arm low-voltage driver be extremely on bridge arm high-voltage drive to third on pipe 18, first Third lower bridge arm low-voltage driver 44~46, low-voltage driver 47 are connected with nation's line of wiring 308.

According to through-current capability needs, select the aluminum steel of appropriate diameter as bonding line, for the part controlled for signal, Such as bridge arm high-voltage drive 41~43, the first lower bridge arm low-voltage driver to third on bridge arm high-voltage drive to third on first Lower bridge arm low-voltage driver 44~46 and low-voltage driver 47, also it is contemplated that using 15 μm of gold thread or 38 μm of aluminum steel as nation Alignment.To the circuit element portion of power device 10, such as the first IGBT pipe to the 6th IGBT pipe 21~26, switching tube 27, first Silicon carbide SBD pipe is to the 6th silicon carbide SBD pipe 11~16, low-power silicon carbide SBD pipe 17, high power silicon carbide SBD pipe 18, nation Surely 200 μm~400 μm of aluminum steel is used.

In view of nation's line board shakes influence to bonding line, the mode of nation, elder generation thick line nation's filament again can be used；For anti- Electrostatic considers, the mode of elder generation's nation filament nation's thick line again can be used.Preventing for vibration amplitude with specific reference to board and board nation head is quiet Depending on electric effect.

It should be noted that due to assembly IGBT pipe with SBD pipe and assemble high-low pressure driver use different processes into Row, can be to a certain extent so as to which this two classes circuit element is fixed by different solder and welding parameter The parameter request to welding procedure is reduced, has positive effect to welding quality and solder yield is improved.

5th process: referring to Fig. 7

Illustrate referring to Fig. 7 by the process of 302 sealing metal substrate 306 of sealing resin.

10 metal substrate 306 of power device for having configured pin 301 is transported to model 44 and 45.By making pin 301 Specific part contacted with fixed device 46, carry out the positioning of metal substrate 306.

When molding, metal substrate 306 is placed in the die cavity being formed in inside mold 50, is then injected and is sealed by cast gate 53 Resin 302.The method being sealed can be used using the transmitting molding of thermosetting resin or using the injection mould of thermosetting resin System.Moreover, the gas for 302 mold cavity of sealing resin that corresponding cast gate 53 injects is externally discharged by exhaust outlet 54.For The selection of 10 cast gate of power device, 53 position should select one side not exclusively with pin 301, the i.e. top of Fig. 6 a, for row The selection of port 54 should select one side completely with pin 301, i.e., Fig. 6 b's is following.

Here, the back side of the metal substrate 306 of power device 10 is tightly attached in lower die 45, but still have a small amount of sealing resin 302 enter between the back side of metal substrate 306 and lower die 45, therefore, after demoulding, need to carry out laser-induced thermal etching or grind Mill, a small amount of sealing resin 302 for remaining in 306 back side of metal substrate is removed, makes the back side of metal substrate 306 from sealing resin 302 expose, and smooth, and the back side above section of metal substrate 306 is sealed by sealing resin 302.

6th process: referring to Fig. 8 a and Fig. 8 b

The 6th process of the application is the feature process of the application, this process is to carry out 301 rib cutting of pin of power device 10 Molding, the process assembled radiator 320 and carry out functions of modules test, power device are completed through thus process as product.

Transmitting mold assembly step in preceding process makes the other parts in addition to the pin 301 of power device 10 all by resin 302 sealings.This process is according to the length and shape needs used, for example, cutting off external pin 301 in the position of dotted line, such as Shown in Fig. 8 a, it can also be bent into certain shapes sometimes, be convenient for subsequent assembly.

Radiator 320 is adhered to the back of metal substrate 306 by the high temperature resistant cement using tolerable temperature at 150 DEG C or more Face, here, the back side that metal substrate 306 can be completely covered in radiator 320 will be from thermosetting resin frame in order to improve thermal diffusivity 13 parts exposed, in order to reduce cost, the metal substrate 306 with circuit element can be only completely covered in radiator 320 The back side.

Then power device is put into test equipment, carries out conventional electric parameters testing, it is pressure-resistant, quiet to generally comprise insulation The test items such as state power consumption, delay time, test passes person are finished product.

It should be noted that if the power device use of the embodiment of the present application in 10A and occasion below, Ke Yikao Consider and does not use radiator 320.

Using above-mentioned operation, power device 10 shown in Fig. 2 a can be completed.

To sum up, the forming method of the application power device include: process first is that, the shape on sizeable radiator made of paper At insulating layer, and the process for forming wiring in surface of insulating layer；Process two, be on wiring configure IGBT pipe, The process of SBD pipe and pin；Process three is the process in the emitter-base bandgap grading position of IGBT pipe installation HVIC pipe, LVIC pipe；Process four, It is the process for forming electrical connection between each circuit element and wiring by metal wire 305；Process five is close by sealing resin The process for sealing wherein one side；Process six is to carry out pin Trim Molding, installation heat dissipation gauffer, and carry out power device function survey The process of examination.Specific process chart can be found in shown in Fig. 9.

Technical solution in above-mentioned the embodiment of the present application, at least have the following technical effects or advantages:

1, the application realizes that high-voltage drive passes through by LVIC pipe by introducing high-low pressure driver, low-voltage driver HVIC pipe realizes that HVIC pipe independent or the configuration of LVIC pipe are on corresponding IGBT pipe, in this way from HVIC pipe or LVIC pipe Cabling to IGBT tube grid can be accomplished unanimously, to can effectively ensure that the one of 6 pieces of IGBT pipe dynamic characteristics for inversion Cause property, the rising edge and failing edge of 1 piece of IGBT for Active PFC can be accomplished very suddenly, and can largely save electricity The area of road wiring, reduces the area of power device ontology substantially, reduces the cost of power device.

2, LVIC pipe can realize that HVIC pipe then passes through BCD by low pressure process such as the BIPOLAR or COMS of low cost Or the high-pressure process such as SOI realize that the former process costs are only the 1/3 of the latter, significantly reduce the manufacturing cost of power device.

3, the silicon carbide SBD pipe of Active PFC, not only speed is fast, and does not have reverse recovery time, even if work Work EMI will not be caused to perplex under high frequency, make it possible improve power factor correction circuit frequency.

4, Converting Unit is managed with silicon carbide SBD, and not only speed is fast, and does not have reverse recovery current, to integrated circuit Ground wire does not generate current noise, to wiring require it is low, reduce development cost, line layout can be obtained it is very close, into One step reduces power device cost.

5, since the working junction temperature of silicon carbide SBD pipe is very high, small heat-dissipating device can be used for big aluminium radiator, make this The weight of the power device of application is greatly reduced, and material cost, transportation cost also decline to a great extent therewith.

6, it due to the measure of various cost declinings, has used the power device of silicon carbide SBD pipe and has used traditional silicon materials Power device not will increase compared to cost, and the power device of the application is that smaller inductance can be used in outside in addition, application Substrate is also made smaller, and overall cost can also decline.

Based on the same inventive concept, the embodiment of the present application also provides the forming methods of power device.

Figure 10 is the flow chart of the forming method of the power device of the embodiment of the present application.As shown in Figure 10, the application is implemented The forming method of the power device of example, comprising the following steps:

S1 provides substrate.

S2, bridge arm switching tube and the first lower bridge arm switch on bridge arm switching tube to third in the first side of substrate formation first Pipe is to third lower bridge arm switching tube.

S3 forms pfc circuit in the first side of substrate.

S4, in the first side of substrate formation first on bridge arm high-voltage drive to third under bridge arm high-voltage drive and first Bridge arm low-voltage driver is to third lower bridge arm low-voltage driver, wherein bridge arm is high on bridge arm high-voltage drive to third on first Driver is pressed to make by BCD or SOI technology, the first lower bridge arm low-voltage driver to third lower bridge arm low-voltage driver and low pressure Driver is made by BIPOLAR or COMS technique.

It, will be on first on bridge arm switching tube to third by the reflow ovens of nitrogen protection in one embodiment of the application Bridge arm switching tube and the first lower bridge arm switching tube to third lower bridge arm switching tube are soldered to substrate.

In one embodiment of the application, bridge arm switching tube includes the first IGBT on bridge arm switching tube to third on first Tri- IGBT of Guan Zhi is managed, and bridge arm high-voltage drive is arranged in the first IGBT Guan Zhi on bridge arm high-voltage drive to third on first On the emitter-base bandgap grading of three IGBT pipes, the first lower bridge arm switching tube to third lower bridge arm switching tube includes the 4th IGBT pipe to the 6th IGBT pipe, the first lower bridge arm low-voltage driver to third lower bridge arm low-voltage driver are arranged in the 4th IGBT pipe to the 6th IGBT On the emitter-base bandgap grading of pipe.

In one embodiment of the application, is formed on bridge arm switching tube to third on bridge arm switching tube on first Bridge arm high-voltage drive on bridge arm high-voltage drive to third on one, and switched in the first lower bridge arm switching tube to third lower bridge arm The first lower bridge arm low-voltage driver is formed on pipe to third lower bridge arm low-voltage driver, comprising: will be on first by fixed glue Bridge arm high-voltage drive is fixed on first bridge arm switching tube on bridge arm switching tube to third on bridge arm high-voltage drive to third On, and the first lower bridge arm low-voltage driver to third lower bridge arm low-voltage driver is fixed on the first lower bridge arm switching tube to On three lower bridge arm switching tubes；Fixed glue is solidified in 170 DEG C -180 DEG C.Wherein, curing time is 1-3 hours.

The application can utmostly reduce the area of power device ontology, and in entirety by introducing high-low pressure driver The availability and reliability of power device are improved under the premise of scheme cost is not increased.

The forming method for the power device introduced by the embodiment of the present application is applied to power device, so be based on The power device that the embodiment of the present application is introduced, the affiliated personnel in this field can understand the detailed process of the forming method, so Details are not described herein.The range that the power device of all the embodiment of the present application is protected belongs to the model to be protected of the application It encloses.

In order to achieve the above objectives, the embodiment of the present application also proposed a kind of electric appliance comprising power device above-mentioned.

In embodiments herein, above-mentioned electric appliance can be air-conditioning, washing machine, refrigerator, electromagnetic oven etc., and therein The function that power device described in preceding sections has may be implemented in power device.

The electric appliance of the embodiment of the present application can reduce cost by above-mentioned power device, improve reliability.

It should be understood by those skilled in the art that, embodiments herein can provide as method, system or computer program Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more, The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces The form of product.

The application is referring to method, the process of equipment (system) and computer program product according to the embodiment of the present application Figure and/or block diagram describe.It should be understood that can be realized by computer program instructions each in flowchart and/or the block diagram The combination of process and/or box in process and/or box and flowchart and/or the block diagram.It can provide these computer journeys Sequence instruct to general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices processor with A machine is generated, so that the instruction generation executed by computer or the processor of other programmable data processing devices is used for Realize the dress for the function of specifying in one or more flows of the flowchart and/or one or more blocks of the block diagram It sets.

These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates, Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or The function of being specified in multiple boxes.

These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one The step of function of being specified in a box or multiple boxes.

It should be noted that in the claims, any reference symbol between parentheses should not be configured to power The limitation that benefit requires.Word "comprising" does not exclude the presence of component or step not listed in the claims.Before component Word "a" or "an" does not exclude the presence of multiple such components.The application can be by means of including several different components It hardware and is realized by means of properly programmed computer.In the unit claims listing several devices, these are filled Several in setting, which can be, to be embodied by the same item of hardware.The use of word first, second, and third is not Indicate any sequence.These words can be construed to title.

Although the preferred embodiment of the application has been described, it is created once a person skilled in the art knows basic Property concept, then additional changes and modifications can be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as It selects embodiment and falls into all change and modification of the application range.

Obviously, those skilled in the art can carry out various modification and variations without departing from the essence of the application to the application Mind and range.In this way, if these modifications and variations of the application belong to the range of the claim of this application and its equivalent technologies Within, then the application is also intended to include these modifications and variations.

Claims

1. a kind of power device characterized by comprising

Substrate；

Bridge arm switching tube on bridge arm switching tube to third is set on the first of first side of substrate；

First lower bridge arm switching tube of first side of substrate is set to third lower bridge arm switching tube；

Bridge arm high-voltage drive on bridge arm high-voltage drive to third is set on the first of first side of substrate, described first On upper bridge arm high-voltage drive to third bridge arm high-voltage drive respectively with described first on bridge arm on bridge arm switching tube to third Switching tube is connected；

First lower bridge arm low-voltage driver of first side of substrate is set to third lower bridge arm low-voltage driver, described first Lower bridge arm low-voltage driver to third lower bridge arm low-voltage driver respectively with the first lower bridge arm switching tube to third lower bridge arm Switching tube is connected, wherein bridge arm high-voltage drive passes through BCD or SOI work on bridge arm high-voltage drive to third on described first Skill production, the first lower bridge arm low-voltage driver to third lower bridge arm low-voltage driver pass through BIPOLAR or COMS technique system Make；

The pfc circuit of first side of substrate is set.

2. power device as described in claim 1, which is characterized in that the substrate is metal substrate or ceramic substrate.

3. power device as claimed in claim 2, which is characterized in that when the substrate is metal substrate, further includes:

Cover the insulating layer of first side of substrate.

4. power device as described in claim 1, which is characterized in that further include:

The radiator of described substrate second side is set.

5. power device as claimed in claim 4, which is characterized in that the substrate and the radiator are multiple by wet type carbon Condensation material is constituted, and the substrate and the radiator are integrally formed.

6. power device as described in claim 1, which is characterized in that bridge arm is opened on bridge arm switching tube to third on described first Closing pipe includes that the first IGBT pipe to the 3rd IGBT is managed, bridge arm high-voltage drive on bridge arm high-voltage drive to third on described first It is arranged on the emitter-base bandgap grading of the first IGBT pipe to the 3rd IGBT pipe, the first lower bridge arm switching tube to third lower bridge arm is opened Closing pipe includes that the 4th IGBT pipe to the 6th IGBT is managed, the first lower bridge arm low-voltage driver to third lower bridge arm low-voltage driver It is arranged on the emitter-base bandgap grading of the 4th IGBT pipe to the 6th IGBT pipe.

7. power device as described in claim 1, which is characterized in that the pfc circuit, including switching tube and the switch The connected low-voltage driver of pipe and silicon carbide SBD pipe.

8. a kind of forming method of power device characterized by comprising

Substrate is provided；

Bridge arm switching tube and the first lower bridge arm switching tube on bridge arm switching tube to third are formed on first in first side of substrate To third lower bridge arm switching tube；

Pfc circuit is formed in first side of substrate；

Bridge under bridge arm high-voltage drive and first is formed on first on bridge arm high-voltage drive to third in first side of substrate Arm low-voltage driver is to third lower bridge arm low-voltage driver, wherein bridge arm on bridge arm high-voltage drive to third on described first High-voltage drive is made by BCD or SOI technology, the first lower bridge arm low-voltage driver to third lower bridge arm low-voltage driver It is made with the low-voltage driver by BIPOLAR or COMS technique.

9. the forming method of power device as claimed in claim 8, which is characterized in that by the reflow ovens of nitrogen protection by Bridge arm switching tube and the first lower bridge arm switching tube to third lower bridge arm switching tube are soldered to institute on bridge arm switching tube to third on one State substrate.

10. the forming method of power device as claimed in claim 8, which is characterized in that bridge arm switching tube is extremely on described first Bridge arm switching tube includes that the first IGBT pipe to the 3rd IGBT is managed in third, bridge on bridge arm high-voltage drive to third on described first Arm high-voltage drive is arranged on the emitter-base bandgap grading of the first IGBT pipe to the 3rd IGBT pipe, and the first lower bridge arm switching tube is extremely Third lower bridge arm switching tube includes that the 4th IGBT pipe to the 6th IGBT is managed, bridge under the first lower bridge arm low-voltage driver to third Arm low-voltage driver is arranged on the emitter-base bandgap grading of the 4th IGBT pipe to the 6th IGBT pipe.

11. the forming method of power device as claimed in claim 10, which is characterized in that the bridge arm on described first is opened Form on first bridge arm high-voltage drive on bridge arm high-voltage drive to third in Guan Guanzhi third on bridge arm switching tube, and Bridge under the first lower bridge arm low-voltage driver to third is formed on the first lower bridge arm switching tube to third lower bridge arm switching tube Arm low-voltage driver, comprising:

By fixed glue by bridge arm high-voltage drive is fixed on described first on bridge arm high-voltage drive to third on described first On upper bridge arm switching tube to third on bridge arm switching tube, and the first lower bridge arm low-voltage driver is low to third lower bridge arm Pressure driver is fixed on the first lower bridge arm switching tube to third lower bridge arm switching tube；

The fixed glue is solidified in 170 DEG C -180 DEG C.

12. the forming method of power device as claimed in claim 11, which is characterized in that the curing time is 1-3 hours.

13. a kind of electric appliance, which is characterized in that the electrical device has the right to require the described in any item power devices of 1-7.