CN207896952U - Driving circuit, intelligent power module and the air conditioner of SiC type power switch tubes - Google Patents
Driving circuit, intelligent power module and the air conditioner of SiC type power switch tubes Download PDFInfo
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- CN207896952U CN207896952U CN201820442112.6U CN201820442112U CN207896952U CN 207896952 U CN207896952 U CN 207896952U CN 201820442112 U CN201820442112 U CN 201820442112U CN 207896952 U CN207896952 U CN 207896952U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The utility model discloses a kind of driving circuit, intelligent power module and the air conditioner of SiC types power switch tube.The driving circuit of the SiC types power switch tube includes driving end, the driving circuit of SiC type power switch tubes, intelligent power module and air conditioner ground terminal, negative voltage generating circuit, bleeder circuit, freewheeling circuit and switching circuit.The negative voltage generating circuit, the bleeder circuit are in perception, the switching circuit is used for when driving termination receives low level signal, connect the signal output end and the freewheeling circuit input terminal, so that the signal output end exports negative voltage, the SiC types metal-oxide-semiconductor negative pressure is turned off with realizing.Technical solutions of the utility model make in the application high-power circuit that the SiC types metal-oxide-semiconductor more can be safe and reliable, and the advantage of the SiC types metal-oxide-semiconductor low switching losses is matched with higher switching frequency, the excellent performance of the SiC types metal-oxide-semiconductor is given full play to, while the job security of the SiC types metal-oxide-semiconductor can be improved.
Description
Technical field
The utility model is related to air-conditioner field, more particularly to a kind of driving circuit of SiC types power switch tube, intelligent work(
Rate module and air conditioner.
Background technology,
There is breakdown voltage height, work(by the third generation of representative semiconductor-Wide Bandgap Semiconductor Power Devices of SiC and GaN
The advantages that working under rate density height, output power height, high, the suitable high temperature of working frequency.It is the most ripe with SiC technologies at present, tool
Standby Industrialized conditions.SiC MOSFET have very high blocking voltage, without the tail currents of similar IGBT, make it have very low
Dynamic loss；The diode of SiC material also has low-down switching loss；SiC material has the heat for being three times in Si again simultaneously
Conductance so that the IPM modules based on SiC material have better operating temperature and good reliability.In high-voltage power market,
SiC device is considered as the perfect replacer of IGBT.
But because of the intrinsic characteristic of SiC power devices, the design of driving circuit is different compared with Si material power devices.
In the prior art, it is generally only directly to be replaced SiC power devices to Si material power devices, without considering SiC power
The drive characteristic of device, this is not only unable to give full play the excellent performance of SiC power devices, or even obtained intelligent power module
Function might as well the power module based on Si power devices.
Utility model content
The main purpose of the utility model is to propose a kind of driving circuit 100 of SiC types power switch tube, intelligent power mould
Block and air conditioner, it is intended to SiC type power switch tubes be made to give full play to its excellent performance.
To achieve the above object, the utility model proposes a kind of SiC types power switch tube driving circuit, the SiC
The driving circuit of type power switch tube includes：
End and ground terminal are driven, the driving end is for receiving the drive signal for driving the SiC types power switch tube；
Negative voltage generating circuit, the negative voltage generating circuit has signal input part and signal output end in perception, described
Signal input part is connect with the driving end, and the signal output end is connected for the controlled end of the SiC types power switch tube；
Bleeder circuit is connected between the signal output end and the ground terminal；
Freewheeling circuit, the freewheeling circuit have input terminal and output end, the input terminal of the freewheeling circuit in perception
It is connect with the driving end, the output end of the freewheeling circuit is connect with the ground terminal；
Switching circuit is connected between the signal output end and the freewheeling circuit input terminal, at the driving end
When receiving low level signal, the signal output end and the freewheeling circuit input terminal are connected, so that the signal output end
Export negative voltage.
Preferably, the negative voltage generating circuit includes the first inductance, the first end of first inductance and the driving end
The second end of electrical connection, first inductance is connected for the controlled end of the SiC types power switch tube.
Preferably, the bleeder circuit includes first resistor, the first end of the first resistor and first inductance
Second end connects, and the second end of the first resistor is connect with the ground terminal.
Preferably, the switching circuit includes the first diode, the anode of first diode and first inductance
Second end connection, the cathode of first diode connect with the first end of first inductance.
Preferably, the switching circuit includes first switch pipe, and the input terminal and the signal of the first switch pipe are defeated
Outlet connects, and the output end of the first switch pipe connect with the freewheeling circuit input terminal, the first switch pipe it is controlled
End is for receiving control signal, when driving termination receives low level signal, to make the input terminal of the first switch pipe
It is connected with output end.
Preferably, the freewheeling circuit includes the second inductance and second resistance；
The first end of second inductance is electrically connected with the driving end, and the second end of second inductance passes through described
Two resistance are connect with the ground terminal.
The utility model also proposes that a kind of intelligent power module, the intelligent power module include driving chip, inversion electricity
Road, pfc circuit and the SiC type power switch tubes driving circuit；
The pfc circuit includes at least one SiC types metal-oxide-semiconductor, and the SiC types power switch tube drives circuit is connected to institute
It states between driving chip and the SiC type metal-oxide-semiconductors of the pfc circuit, to receive the control signal that the driving chip is sent out, driving
The SiC type metal-oxide-semiconductors of the pfc circuit；
The driving chip has the driving ends PFC and common end, the driving ends PFC and the SiC types of the driving chip
The driving end of the driving circuit of power switch tube connects, the common end of the driving chip and the SiC types power switch tube
The ground terminal of driving circuit connects；
The inverter circuit includes multiple power switch tubes for constituting inversion bridge circuit, the driving chip with it is described
Inverter circuit is electrically connected, to drive the inverter circuit to work.
The utility model also proposes that a kind of intelligent power module, the intelligent power module include driving chip, inversion electricity
The driving circuit of road and the SiC type power switch tubes；
The inverter circuit includes six power switch tubes, to constitute the inversion bridge circuit of inverter circuit, and it is at least one
The power switch tube is SiC type metal-oxide-semiconductors, and the SiC types power switch tube drives circuit is connected to the driving chip and institute
Between the SiC type metal-oxide-semiconductors for stating inversion bridge circuit, to receive the control signal that the driving chip is sent out, the inverter bridge is driven
The SiC type metal-oxide-semiconductors of circuit.
Preferably, the inversion bridge circuit includes bridge arm SiC types power switch tube and three-phase lower bridge arm SiC type work(on three-phase
Rate switching tube, there are six the driving circuits of the SiC types power switch tube, the driving circuit per the SiC types power switch tube
The SiC type power switch tubes setting of inversion bridge circuit is corresponded to respectively；
The driving chip corresponds to bridge arm SiC type power switch tubes tool on three-phase, and there are three upper bridge arm driving end, corresponding three
Phase lower bridge arm SiC type power switch tubes tool there are three lower bridge arm drive end, the driving chip also have upper bridge arm ground terminal and
Upper bridge arm ground terminal；The drive at upper bridge arm the driving end, lower bridge arm driving end and the driving circuit of the SiC types power switch tube
Moved end connects, and the upper bridge arm ground terminal and upper bridge arm ground terminal correspond to and the driving circuit of the SiC types power switch tube
Ground terminal connects.
The utility model also proposes that a kind of air conditioner, the air conditioner include the driving of the SiC type power switch tubes
Circuit or the intelligent power module.
Technical solutions of the utility model by the way that negative voltage generating circuit, bleeder circuit, freewheeling circuit and switching circuit is arranged,
When driving termination receives high level signal, the negative voltage generating circuit, bleeder circuit form driving circuit to drive
The work of SiC type metal-oxide-semiconductors is stated, while the freewheeling circuit is connected and has electric current to flow through；When driving termination receives low level letter
Number when, the switching circuit connects the signal output end and the freewheeling circuit input terminal, makes in the negative voltage generating circuit
Electric current flow back to the ground terminal via the switching circuit, freewheeling circuit, make signal output end output negative voltage, with reality
Now the SiC types metal-oxide-semiconductor negative pressure is turned off.Negative pressure shutdown can not only realize SiC types metal-oxide-semiconductor described in reliable turn-off, avoid SiC
Interference of the type metal-oxide-semiconductor by component ageing and from circuit other components and by false triggering, more can effectively improve described
The turn-off speed of SiC type metal-oxide-semiconductors, to improve the switching frequency of the SiC types metal-oxide-semiconductor.This programme can also eliminate voltage point
Peak avoids due to voltage spikes along the bad SiC types metal-oxide-semiconductor.Therefore technical solutions of the utility model make the SiC types metal-oxide-semiconductor more
In application high-power circuit that can be safe and reliable, and the SiC types metal-oxide-semiconductor low switching losses are matched with higher switching frequency
Advantage, gives full play to the excellent performance of the SiC types metal-oxide-semiconductor, while can improve the work safety of the SiC types metal-oxide-semiconductor
Property.
Description of the drawings
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, the structure that can also be shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the electrical block diagram of the driving circuit of the utility model SiC type power switch tubes；
Fig. 2 is the electrical block diagram of one embodiment of the utility model intelligent power module
Fig. 3 is the electricity of SiC type metal-oxide-semiconductors in the driving circuit with driving chip, pfc circuit of SiC type power switch tubes in Fig. 2
Road attachment structure schematic diagram；
Fig. 4 is the electrical block diagram of the another embodiment of the utility model intelligent power module；
Fig. 5 is the driving circuit with driving chip and the SiC types in inversion bridge circuit of SiC type power switch tubes in Fig. 4
The schematic diagram of circuit connection structure of metal-oxide-semiconductor.
The embodiments will be further described with reference to the accompanying drawings for the realization, functional characteristics and advantage of the utility model aim.
Specific implementation mode
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describing, it is clear that described embodiment is only a part of the embodiment of the utility model, rather than all
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Lower obtained every other embodiment, shall fall within the protection scope of the present invention.
If it is to be appreciated that related in the utility model embodiment directionality instruction (such as upper and lower, left and right, it is preceding,
Afterwards ...), then directionality instruction be only used for explain it is opposite between each component under a certain particular pose (as shown in the picture)
Position relationship, motion conditions etc., if the particular pose changes, directionality instruction also correspondingly changes correspondingly.
If, should " first ", " the in addition, relate to the description of " first ", " second " etc. in the utility model embodiment
Two " etc. description is used for description purposes only, and is not understood to indicate or imply its relative importance or is implicitly indicated meaning
The quantity of the technical characteristic shown." first " is defined as a result, the feature of " second " can explicitly or implicitly include at least one
A this feature.In addition, the technical solution between each embodiment can be combined with each other, but must be with ordinary skill
Personnel can be implemented as basis, will be understood that this technical side when the combination of technical solution appearance is conflicting or cannot achieve
The combination of case is not present, also not within the protection domain of the requires of the utility model.
The utility model proposes a kind of driving circuit 100 of SiC types power switch tube, the SiC types power switch tube
Driving circuit 100 can be applied in intelligent power module, for driving the SiC type power switch plumbers in intelligent power module
Make.The power switch tubes of SiC types described in this programme can be SiC types metal-oxide-semiconductor or SiC type IGBT constant power switching tubes, especially fit
For SiC type metal-oxide-semiconductors；In the examples below, illustrate by taking SiC type metal-oxide-semiconductors as an example.
SiC type metal-oxide-semiconductors have very high blocking voltage, without the tail currents of similar IGBT, make it have very low dynamic
It is lost, the switching tube of SiC material also has low-down switching loss；But the switching frequency of SiC type metal-oxide-semiconductors is not high, and by
In the threshold range ratio Si base power device smallers of SiC type metal-oxide-semiconductors, it is logical that a due to voltage spikes may cause SiC type metal-oxide-semiconductors to open by mistake
Or breakdown grid oxide layer damages.Therefore this programme is directed to the driving circuit 100 of SiC type power switch tubes by design, with
The turn-off speed of SiC type power switch tubes is being improved, and is making the job security of the raising SiC types metal-oxide-semiconductor, so that SiC types
The excellent electrical properties of metal-oxide-semiconductor are given full play to.
Referring to Fig. 1, specifically, the driving circuit 100 of the SiC types power switch tube in this programme includes driving end
IN, OUT, negative voltage generating circuit 10, bleeder circuit 20, freewheeling circuit 30 and switching circuit 40.The driving end IN is for connecing
Receive the drive signal for driving the SiC types power switch tube.The negative voltage generating circuit 10 has signal input part in perception
And signal output end, the signal input part are connect with the driving end IN, the signal output end is opened for the SiC types power
Close the controlled end connection of pipe；The bleeder circuit 20 is connected between the signal output end and the OUT；The freewheeling circuit
30 in perception, and has input terminal and output end, and the input terminal of the freewheeling circuit 30 is connect with the driving circuit, described continuous
The output end of current circuit 30 is connect with the OUT；The switching circuit 40 is connected to the signal output end and afterflow electricity
Between 30 input terminal of road, continued with described with when the driving end IN receives low level signal, connecting the signal output end
30 input terminal of current circuit, so that the signal output end exports negative voltage.
It will be appreciated by persons skilled in the art that the negative voltage generating circuit 10 and the freewheeling circuit 30 in this programme are
Inductive circuit, i.e. negative voltage generating circuit 10 and the freewheeling circuit 30 are that there are the alternating current circuit of inductance element or Rectified alternating currents
Road.By the characteristic of inductive circuit it is found that when inductive element is connected in circuit, it can so that current phase is stagnant in the inductive circuit
Afterwards in voltage-phase, and there is afterflow characteristic.And there are many existence forms of inductance element, such as coil windings, magnetic bead etc..This
Negative voltage generating circuit 10 and freewheeling circuit 30 in scheme include inductance, can also include first device such as resistance, capacitance, diode
Part, as long as perception is presented in the overall performance of the circuit.Since one end of the bleeder circuit 20 generates electricity with the negative pressure
The signal output end on road 10 connects, therefore the driving end IN, negative voltage generating circuit 10, bleeder circuit 20 and the OUT are formed
One driving circuit, the signal output end of the negative voltage generating circuit 10 export the drive for driving the SiC types metal-oxide-semiconductor controlled end
Dynamic signal.Therefore when the driving end IN receives high level signal, the SiC types metal-oxide-semiconductor controlled end can receive
Effect ground drive signal, to be switched on or off；At the same time it has electric current and flows through the freewheeling circuit 30 from the driving end IN
It returns again to the OUT；The switching circuit 40 is failure to actuate at this time.
Further, when the driving end IN receives low level signal, due to 20 reversing of bleeder circuit, and it is negative
Press generation circuit 10 in since it is with inductance element, thus with afterflow characteristic, while freewheeling circuit 30 due to be in perception,
Therefore when driving end IN to receive low level signal, the current direction in freewheeling circuit 30 will not change.Therefore work as
When switching circuit 40 connects the signal output end with 30 input terminal of freewheeling circuit, the electricity in the negative voltage generating circuit 10
Stream can flow back to the OUT via the switching circuit, freewheeling circuit 30.Since the voltage of the OUT is 0V, the at this time negative pressure
The voltage of 10 signal output end of generation circuit output is negative voltage.Therefore when the driving end IN receives low level signal,
The SiC types metal-oxide-semiconductor realizes negative pressure shutdown.Negative pressure shutdown can not only realize SiC types metal-oxide-semiconductor described in reliable turn-off, avoid SiC
Interference of the type metal-oxide-semiconductor by component ageing and from circuit other components and by false triggering, more can effectively improve described
The turn-off speed of SiC type metal-oxide-semiconductors, to help to improve the switching frequency of the SiC types metal-oxide-semiconductor so that the SiC types MOS
In application high-power circuit safe and reliable Guan Gengneng, and the SiC types metal-oxide-semiconductor low switch is matched with higher switching frequency and is damaged
The advantage of consumption.
Further, if due to voltage spikes occurs in the gate drive signal of SiC type metal-oxide-semiconductors, it may result in SiC types MOS
It the damage of pipe and opens by mistake logical.In the present solution, the negative voltage generating circuit 10 has the characteristics that perception, therefore can be in driving end IN
When the driving voltage received has due to voltage spikes, due to voltage spikes can be by by the inductance member in the negative voltage generating circuit 10
Part filters out, and when due to voltage spikes is excessive, and open circuit can occur for the negative voltage generating circuit 10, at this time SiC types metal-oxide-semiconductor be turned off and
It is protected.So the driving circuit 100 of the SiC type power switch tubes of this programme not only may be implemented negative pressure shutdown, eliminate electricity
Pointing peak can also protect the SiC types metal-oxide-semiconductor when there is serious due to voltage spikes.
Technical solutions of the utility model are by being arranged negative voltage generating circuit 10, bleeder circuit 20, freewheeling circuit 30 and cutting
Circuit 40 is changed, when the driving end IN receives high level signal, the negative voltage generating circuit 10, bleeder circuit 20, which are formed, to be driven
Dynamic circuit is to drive the SiC types metal-oxide-semiconductor to work, while the freewheeling circuit 30 is connected and has electric current to flow through；When the driving
When end IN receives low level signal, the switching circuit 40 is connected the signal output end and is inputted with the freewheeling circuit 30
End, makes the electric current in the negative voltage generating circuit 10 flow back to the OUT via the switching circuit, freewheeling circuit 30, makes described
Signal output end exports negative voltage, is turned off to the SiC types metal-oxide-semiconductor negative pressure with realizing.Negative pressure shutdown can not only be realized reliable
The SiC types metal-oxide-semiconductor is turned off, avoid SiC types metal-oxide-semiconductor by component ageing and the interference from circuit other components and is missed
Triggering, more can effectively improve the turn-off speed of the SiC types metal-oxide-semiconductor, to improve the switch frequency of the SiC types metal-oxide-semiconductor
Rate.This programme can also eliminate due to voltage spikes, avoid due to voltage spikes along the bad SiC types metal-oxide-semiconductor.Therefore the utility model technology
Scheme makes in the application high-power circuit that the SiC types metal-oxide-semiconductor more can be safe and reliable, and matches institute with higher switching frequency
The advantage for stating SiC type metal-oxide-semiconductor low switching losses, gives full play to the excellent performance of the SiC types metal-oxide-semiconductor, while can improve
The job security of the SiC types metal-oxide-semiconductor.
The negative voltage generating circuit 10 needs the characteristic with afterflow, therefore the negative voltage generating circuit is arranged in this programme
10 include the first inductance L1, and the first end of the first inductance L1 is electrically connected with the driving end IN, the first inductance L1's
Second end is connected for the controlled end of the SiC types power switch tube.Further, the bleeder circuit 20 includes first resistor
R1, the first end of the first resistor R1 are connect with the second end of the first inductance L1, the second end of the first resistor R1
It is connect with the OUT.Certain bleeder circuit 20 can also be sequentially connected in series using clamp diode or multiple resistance carrys out generation
It replaces.When driving end IN to receive high level, driving current flows into the first inductance L1 and first resistor R1, first electricity
The partial pressure generated on resistance R1 is the driving voltage of the SiC types metal-oxide-semiconductor.It is understood that by adjusting first electricity
Hinder the resistance value of R1, you can control the size of the SiC types metal-oxide-semiconductor driving voltage.In another embodiment, the first resistor R1
It can also be replaced using adjustable resistance.
Based on above-described embodiment it is found that the switching circuit 40 is connected to the signal output end and the freewheeling circuit 30
Between input terminal, for when the driving end IN receives low level, connecting the signal output end and the freewheeling circuit
30 input terminals.Therefore the realization method of the switching circuit 40 can be a variety of, for example, the switching circuit 40 includes first
The input terminal of switching tube, the first switch pipe is connect with the signal output end, the output end of the first switch pipe and institute
The connection of 30 input terminal of freewheeling circuit is stated, the controlled end of the first switch pipe is for receiving control signal, at the driving end
When IN exports low level signal, make input terminal and the output end conducting of the first switch pipe.The first switch pipe can
Think triode.In another embodiment, in order to simplify circuit, and realize it is active connect the signal output end with it is described
30 input terminal of freewheeling circuit, therefore in the present embodiment, the switching circuit 40 includes the first diode D1, first diode
The anode of D1 is connect with the second end of the first inductance L1, and the cathode of the first diode D1 is with the first inductance L1's
First end connects.
Specifically, when the driving end IN receives high level, the first end of the first inductance L1 is high potential, the
The second end of one inductance L1 is low potential, and when the driving end IN receives low level, due to negative voltage generating circuit at this time
Electric current in 10 reduces, therefore the reversing at the first both ends inductance L1, and the first end of the first inductance L1 is low electricity at this time
The second end of position, the first inductance L1 is high potential, and the anode voltage of the first diode D1 is led more than cathode voltage at this time
It is logical, to realize the purpose of signal output end described in turn on automatically and 30 input terminal of the freewheeling circuit.
In the present solution, when the driving end IN receives low level, the freewheeling circuit 30 is that the negative pressure generates electricity
Road 10 provides current path.Specifically, the freewheeling circuit 30 includes the second inductance L2 and second resistance R2；Second inductance
The first end of L2 is electrically connected with the driving end IN, the second end of the second inductance L2 by the second resistance R2 with it is described
OUT connections.When the driving end IN receives high level, the first end of the second inductance L2 is high potential, and second end is
Low potential；And when the driving end IN receives low level, the first end of the second inductance L2 is low potential, and second end is
High potential.Since the second end of the second inductance L2 is connect by the second resistance R2 with the OUT, described
The second end of one inductance L1 produces negative voltage.It is understood that the size of the negative voltage can pass through first resistor R1
It is adjusted with the resistance value of second resistance R2, preferably to match the switching speed of the SiC types metal-oxide-semiconductor.
The utility model also proposes that a kind of intelligent power module, the intelligent power module are applied in household electrical appliance, example
Such as air conditioner.Existing intelligent power module internal power device is silicon-based devices, and people are non-to the research of Si power device
Often ripe, silicon-based power performance of semiconductor device will approach the limit of material character, it is difficult to be innovated and made by device architecture
It makes the approach such as process modification and increases substantially its overall performance.Because of the limitation of silicon materials, Si power device mostly can only be 250
DEG C or less work；And silicon materials critical breakdown electric field, in 250000V/cm, voltage endurance capability is limited；And Si power device high frequency
Performance is bad；There are apparent tail currents using most silicon substrate IGBT, and be difficult to reduce or eliminate, this makes silicon substrate
IGBT has larger turn-off power loss.With the continuous expansion of power electronic technique application range, increasingly harsh application scenario
The continuous improvement required power electronic equipment with people is badly in need of with high pressure, high temperature, low-loss new material power semiconductor
Device is to substitute traditional silicon-based power semiconductor devices.Therefore SiC type power switch tubes are applied to intelligent work(in this programme
It is the breakdown voltages of SiC type power switch tubes is high, power density is high, output power is high, high blocking voltage, low in rate module
The good characteristics such as switching loss be combined with the high integration of intelligent power module, the advantage of high reliability, and incite somebody to action this simultaneously
The driving circuit 100 of the SiC type power switch tubes of scheme is applied to drive the IPM moulds SiC types power switch tube in the block, makes
Obtaining the IPM modules based on SiC material has better electric property and good reliability.
Fig. 2 and Fig. 3 are please referred to, in one embodiment, the intelligent power module includes driving chip HVIC, inversion electricity
Road, pfc circuit (circuit of power factor correction) and the SiC type power switch tubes driving circuit 100.It needs herein
It explains, pfc circuit described in this programme can independence and can fully achieve the complete circuits of PFC functions, can also
It is that external circuit/device with the IPM modules is needed to collectively form complete PFC Switching Power Supplies；In the present solution, it is preferred that using
Latter scheme, i.e., comprising one or more semiconductor power devices in the described pfc circuit, the semiconductor power device be located at
The circuit/device of IPM module-externals collectively forms complete PFC Switching Power Supplies, to execute PFC functions.
Specifically, the pfc circuit includes at least one SiC types metal-oxide-semiconductor MOS7；The SiC types power switch tube drives
Circuit is electrically connected with the driving chip HVIC, the SiC type power switch tubes for driving the pfc circuit；The driving core
Piece HVIC have PFC drive end INPFCOUT and common end COM, the driving chip HVIC PFC driving end INPFCOUT with
The driving end IN connections of the driving circuit 100 of the SiC types power switch tube, the common end COM of the driving chip HVIC with
The OUT connections of the driving circuit 100 of the SiC types power switch tube.The pfc circuit further includes a diode D8, two pole
The drain electrode of the anode of pipe and the SiC types metal-oxide-semiconductor MOS7, the cathode of the diode are the output end of the pfc circuit.It is described
Inverter circuit includes multiple power switch tubes, and the driving chip HVIC is electrically connected with the inverter circuit, described inverse to drive
Become circuit work.
Specifically, in the present solution, the pfc circuit includes a SiC types metal-oxide-semiconductor MOS7 and SiC type Xiao
Special based diode SBD7；The cathode of the SiC types Schottky diode SBD7 is connect with the source electrode of the SiC types metal-oxide-semiconductor MOS7,
The anode of the SiC types Schottky diode SBD7 is connect with the drain electrode of the SiC types metal-oxide-semiconductor MOS7.The driving chip
The PFC drivings end INPFCOUT of HVIC drives the SiC types metal-oxide-semiconductor by the driving circuit 100 of the SiC types power switch tube
The physical circuit course of work of MOS7 please refers to above-described embodiment, and details are not described herein.Work(used in the inverter circuit
Rate switching tube can be the metal-oxide-semiconductor or IGBT of silicon materials, and in the present embodiment, inversion bridge circuit is constituted by six IGBT, described six
A IGBT is respectively IGBT1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6；And the collector and emitter of each IGBT it
Between be parallel with a silicon substrate fly-wheel diode, therefore corresponding six IGBT are respectively there are six silicon substrate fly-wheel diode, respectively FRD1,
FRD2、FRD3、FRD4、FRD5、FRD6。
This programme in IPM modules by being integrated with inverter circuit and pfc circuit, and the semiconductor work(of the pfc circuit
Rate device uses SiC type metal-oxide-semiconductors, so that the pfc circuit has preferable electric property, thermal stability, strong capability of resistance to radiation
The advantages that, under the premise of not greatly improving material cost, significantly improve the electric heating property and work of entire IPM modules
Make reliability；To meet the adverse circumstances that domestic variable frequency electric appliance is encountered in use, domestic variable frequency electric appliance is improved
Use reliability and safety.
Referring to Fig. 5, in another embodiment, the intelligent power module include driving chip HVIC, inverter circuit, with
And the driving circuit 100 of SiC type power switch tubes；The inverter circuit includes six power switch tubes, to constitute inverter circuit
Inversion bridge circuit, and at least one power switch tube be SiC type metal-oxide-semiconductors, the SiC types power switch tube drives circuit
It is connected between the driving chip HVIC and the SiC type metal-oxide-semiconductors of the inversion bridge circuit, to receive the driving chip HVIC
The control signal sent out drives the SiC type metal-oxide-semiconductors of the inversion bridge circuit.
In a preferred embodiment, the inversion bridge circuit includes on three-phase under bridge arm SiC type power switch tube MH and three-phase
Bridge arm SiC type power switch tubes ML, there are six the driving circuits 100 of the SiC types power switch tube, per the SiC types power
The driving circuit 100 of switching tube corresponds to the SiC type power switch tubes setting of inversion bridge circuit respectively；The driving chip HVIC
There are three bridges under upper bridge arm driving end HO (HO1, HO2, HO3), corresponding three-phase for bridge arm SiC type power switch tubes tool on corresponding three-phase
There are three lower bridge arm driving end LO (LO1, LO2, LO3), the driving chip HVIC also to have upper for arm SiC type power switch tubes tool
Bridge arm OUTVS and upper bridge arm OUTCOM；The upper bridge arm driving end HO, lower bridge arm driving end LO and the SiC types power switch
The driving end IN connections of the driving circuit 100 of pipe, the upper bridge arm OUTVS and upper bridge arm OUTCOM are corresponded to and the SiC types work(
The OUT connections of the driving circuit 100 of rate switching tube.
Specifically, the inversion bridge circuit have six SiC type power switch tubes, respectively MOS1, MOS2, MOS3,
MOS4、MOS5、MOS6；The SiC type Schottky diodes there are one equal parallel connections per the SiC types power switch tube, therefore inverter bridge
Six Schottky diodes, respectively SBD1, SBD2, SBD3, SBD4, SBD5, SBD6 are included at least in circuit.It is each described
SiC type Schottky diodes are correspondingly connected between the source electrode and drain electrode of a SiC types metal-oxide-semiconductor.
There are three the upper bridge arm driving end HO of the driving chip HVIC, respectively HO1, HO2, HO3；The SiC types work(
The driving circuit 100 of rate switching tube is connected to bridge arm driving end HO on one and drives end HO corresponding three with bridge arm on this
In phase between bridge arm SiC type power switch tubes MH.There are three the lower bridge arm driving end LO of the driving chip HVIC, respectively
LO1、LO2、LO3；The driving circuit 100 of the SiC types power switch tube be connected to a lower bridge arm driving end LO and with
The lower bridge arm drives between the corresponding three-phase lower bridge arm SiC types power switch tube ML of end LO.The drive of the SiC types power switch tube
The OUT of dynamic circuit 100 is connect with the ends VS of the driving chip HVIC.The upper bridge arm driving end HO of the driving chip HVIC,
Lower bridge arm driving end LO drives the SiC types of the inversion bridge circuit by the driving circuit 100 of the SiC types power switch tube
The physical circuit course of work of metal-oxide-semiconductor please refers to above-described embodiment, and details are not described herein.
Fig. 4 and Fig. 5 are please referred to, in another embodiment, the power of the composition inversion bridge circuit of the intelligent power module
Power switch tube in switching tube and pfc circuit is SiC type metal-oxide-semiconductors, and the intelligent power module corresponds to each SiC
Type metal-oxide-semiconductor is respectively provided with the driving circuit 100 of a SiC type power switch tubes.The driving chip HVIC passes through the SiC types power
The driving circuit 100 of switching tube drives the SiC types metal-oxide-semiconductor of the inversion bridge circuit and the SiC type metal-oxide-semiconductor works in pfc circuit
Make.Specifically, the inversion bridge circuit have six SiC type metal-oxide-semiconductors, respectively MOS1, MOS2, MOS3, MOS4, MOS5,
MOS6；There are one SiC type metal-oxide-semiconductors in the pfc circuit, are MOS7.Six SiC types metal-oxide-semiconductors of the inversion bridge circuit are simultaneously
Connection is there are one Schottky diode, therefore altogether there are six Schottky diode, respectively SBD1, SBD2, SBD3, SBD4, SBD5,
SBD6.There are one Schottky diode SBD7 in the pfc circuit, be parallel to pfc circuit SiC type metal-oxide-semiconductors drain electrode and
Between source electrode.
The utility model also proposes that a kind of air conditioner, the air conditioner include the driving of the SiC type power switch tubes
Circuit 100 or the intelligent power module.The driving circuit 100 of the SiC types power switch tube can be applied to the sky
In main circuit in the master control borad circuit for adjusting device, or applied to the air conditioner；The intelligent power module can be applied to institute
In the frequency converter for stating air conditioner.The driving circuit 100 of the SiC types power switch tube or the intelligent power module it is specific
The course of work and advantageous effect please refer to above-described embodiment, and details are not described herein.The SiC types power in certain this programme
The driving circuit 100 of switching tube or the intelligent power module can also be applied in the household electrical appliance such as washing machine, refrigerator.
The above is only the preferred embodiment of the present invention, and it does not limit the scope of the patent of the present invention,
It is every under the inventive concept of the utility model, equivalent structure made based on the specification and figures of the utility model becomes
It changes, or directly/be used in other related technical areas indirectly and be included in the scope of patent protection of the utility model.
Claims (10)
1. a kind of driving circuit of SiC types power switch tube, which is characterized in that the driving circuit of the SiC types power switch tube
Including：
End and ground terminal are driven, the driving end is for receiving the drive signal for driving the SiC types power switch tube；
Negative voltage generating circuit, the negative voltage generating circuit have signal input part and signal output end, the signal in perception
Input terminal is connect with the driving end, and the signal output end is connected for the controlled end of the SiC types power switch tube；
Bleeder circuit is connected between the signal output end and the ground terminal；
Freewheeling circuit, the freewheeling circuit have input terminal and output end, the input terminal of the freewheeling circuit and institute in perception
The connection of driving end is stated, the output end of the freewheeling circuit is connect with the ground terminal；
Switching circuit is connected between the signal output end and the freewheeling circuit input terminal, to be received at the driving end
When to low level signal, the signal output end and the freewheeling circuit input terminal are connected, so that the signal output end exports
Negative voltage.
2. the driving circuit of SiC types power switch tube as described in claim 1, which is characterized in that the negative voltage generating circuit
Including the first inductance, the first end of first inductance is electrically connected with the driving end, and the second end of first inductance is for institute
State the controlled end connection of SiC type power switch tubes.
3. the driving circuit of SiC types power switch tube as claimed in claim 2, which is characterized in that the bleeder circuit includes
First resistor, the first end of the first resistor are connect with the second end of first inductance, the second end of the first resistor
It is connect with the ground terminal.
4. the driving circuit of SiC types power switch tube as claimed in claim 2, which is characterized in that the switching circuit includes
First diode, the anode of first diode are connect with the second end of first inductance, the moon of first diode
Pole is connect with the first end of first inductance.
5. the driving circuit of SiC types power switch tube as claimed in claim 2, which is characterized in that the switching circuit includes
The input terminal of first switch pipe, the first switch pipe is connect with the signal output end, the output end of the first switch pipe
It is connect with the freewheeling circuit input terminal, the controlled end of the first switch pipe is for receiving control signal, in the driving
When termination receives low level signal, make input terminal and the output end conducting of the first switch pipe.
6. the driving circuit of SiC types power switch tube as described in claim 1, which is characterized in that the freewheeling circuit includes
Second inductance and second resistance；
The first end of second inductance is electrically connected with the driving end, and the second end of second inductance passes through second electricity
Resistance is connect with the ground terminal.
7. a kind of intelligent power module, which is characterized in that the intelligent power module includes driving chip, inverter circuit, PFC electricity
The driving circuit of road and the SiC type power switch tubes as described in claim 1 to 6 any one；
The pfc circuit includes at least one SiC types metal-oxide-semiconductor, and the SiC types power switch tube drives circuit is connected to the drive
It is dynamic between chip and the SiC type metal-oxide-semiconductors of the pfc circuit, to receive the control signal that the driving chip is sent out, described in driving
The SiC type metal-oxide-semiconductors of pfc circuit；
The driving chip has the driving ends PFC and common end, the driving ends PFC and the SiC types power of the driving chip
The driving end of the driving circuit of switching tube connects, the driving of the common end of the driving chip and the SiC types power switch tube
The ground terminal of circuit connects；
The inverter circuit includes multiple power switch tubes for constituting inversion bridge circuit, the driving chip and the inversion
Circuit is electrically connected, to drive the inverter circuit to work.
8. a kind of intelligent power module, which is characterized in that the intelligent power module include driving chip, inverter circuit and
The driving circuit of SiC type power switch tubes as described in claim 1 to 6 any one；
The inverter circuit includes six power switch tubes, to constitute the inversion bridge circuit of inverter circuit, and it is at least one described
Power switch tube is SiC type metal-oxide-semiconductors, and the SiC types power switch tube drives circuit is connected to the driving chip and described inverse
Become between the SiC type metal-oxide-semiconductors of bridge circuit, to receive the control signal that the driving chip is sent out, drives the inversion bridge circuit
SiC type metal-oxide-semiconductors.
9. intelligent power module as claimed in claim 8, which is characterized in that the inversion bridge circuit includes bridge arm on three-phase
SiC types power switch tube and three-phase lower bridge arm SiC type power switch tubes, the driving circuit of the SiC types power switch tube have six
A, the driving circuit per the SiC types power switch tube corresponds to the SiC type power switch tubes setting of inversion bridge circuit respectively；
The driving chip corresponds to bridge arm SiC type power switch tubes tool on three-phase, and there are three under upper bridge arm driving end, corresponding three-phase
There are three lower bridge arms, and end, the driving chip to be driven also to have upper bridge arm ground terminal and upper bridge for bridge arm SiC type power switch tubes tool
Arm ground terminal；The driving end of the driving circuit at the upper bridge arm driving end, lower bridge arm driving end and the SiC types power switch tube
Connection, the upper bridge arm ground terminal and upper bridge arm ground terminal correspond to the ground connection with the driving circuit of the SiC types power switch tube
End connection.
10. a kind of air conditioner, which is characterized in that the air conditioner includes the SiC types as described in claim 1 to 6 any one
The driving circuit of power switch tube or the intelligent power module as described in claim 7 to 9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820442112.6U CN207896952U (en) | 2018-03-28 | 2018-03-28 | Driving circuit, intelligent power module and the air conditioner of SiC type power switch tubes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820442112.6U CN207896952U (en) | 2018-03-28 | 2018-03-28 | Driving circuit, intelligent power module and the air conditioner of SiC type power switch tubes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207896952U true CN207896952U (en) | 2018-09-21 |
Family
ID=63540038
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820442112.6U Expired - Fee Related CN207896952U (en) | 2018-03-28 | 2018-03-28 | Driving circuit, intelligent power module and the air conditioner of SiC type power switch tubes |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207896952U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560693A (en) * | 2018-12-29 | 2019-04-02 | 广东美的制冷设备有限公司 | Electric appliance, power device and forming method thereof |
| CN110224579A (en) * | 2019-05-16 | 2019-09-10 | 南京航空航天大学 | A kind of eGaN HEMT hybrid solenoid valve circuit and control method |
-
2018
- 2018-03-28 CN CN201820442112.6U patent/CN207896952U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560693A (en) * | 2018-12-29 | 2019-04-02 | 广东美的制冷设备有限公司 | Electric appliance, power device and forming method thereof |
| CN110224579A (en) * | 2019-05-16 | 2019-09-10 | 南京航空航天大学 | A kind of eGaN HEMT hybrid solenoid valve circuit and control method |
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