CN216290724U

CN216290724U - Semiconductor circuit having a plurality of transistors

Info

Publication number: CN216290724U
Application number: CN202122642531.9U
Authority: CN
Inventors: 冯宇翔
Original assignee: Guangdong Huixin Semiconductor Co Ltd
Current assignee: Guangdong Huixin Semiconductor Co Ltd
Priority date: 2021-10-29
Filing date: 2021-10-29
Publication date: 2022-04-12
Anticipated expiration: 2031-10-29

Abstract

The utility model discloses a semiconductor circuit which comprises a circuit board, a plurality of driving power modules and a power factor correction module, wherein the driving power modules and the power factor correction module are integrally arranged on the circuit board, and the driving power modules are electrically connected through shared functional pins. The semiconductor circuit provided by the utility model integrates a plurality of driving power modules and a power factor correction module, so that the area of the integrated semiconductor circuit occupying the electric control PCB is greatly reduced, the design of the whole electric control PCB is simplified, the total cost of electric control is reduced, the anti-interference capability of the power factor correction module is improved, and the reliability of the whole electric control is improved.

Description

Semiconductor circuit having a plurality of transistors

Technical Field

The present invention relates to the field of power semiconductors, and more particularly, to a semiconductor circuit.

Background

The semiconductor circuit is a power driving product combining power electronics and integrated circuit technology, and has the advantages of high current, low saturation voltage and high voltage resistance of a GTR (high power transistor), and the advantages of high input impedance, high switching frequency and low driving power of an MOSFET (field effect transistor). Logic, control, detection and protection circuits are integrated in the semiconductor circuit, so that the semiconductor circuit is convenient to use, the size is reduced, the development time is shortened, the reliability is enhanced, and the semiconductor circuit is suitable for the development direction of the current power device.

At present, common frequency conversion household appliances are required to be provided with a PFC (power factor correction), the PFC is integrated on a driving power module, and a plurality of motors are also arranged, such as a frequency conversion air conditioner and an external unit of a single frequency conversion air conditioner, so that two driving power modules are required. The english of PFC is called "Power Factor Correction" in all, which means "Power Factor Correction", and the Power Factor refers to the relationship between the effective Power and the total Power consumption, that is, the ratio of the effective Power divided by the total Power consumption, and the Power Factor can measure the degree of effective utilization of the Power, and when the Power Factor value is larger, it means that the Power utilization rate is higher.

In the frequency conversion household electrical appliance which needs to use two driving power modules, two independent driving power modules are usually arranged on an electric control board respectively, and the two driving power modules need to be arranged on the electric control board, so that the whole volume of the electric control board is large, and resource waste is caused.

SUMMERY OF THE UTILITY MODEL

The present invention is directed to a semiconductor circuit, which solves the above problems.

In order to achieve the above object, the present invention provides a semiconductor circuit, which includes a circuit board, and a plurality of driving power modules and a power factor correction module integrated on the circuit board, wherein the driving power modules and the power factor correction module are electrically connected through a common functional pin.

Preferably, the shared function pins include two power terminal pins and a ground terminal pin, the two power terminal pins are a VCC pin and a VDD pin, respectively, and the ground terminal pin is a VSS pin.

Preferably, the semiconductor circuit further includes a plurality of strong current pins and a plurality of weak current pins disposed on the circuit board, and the plurality of strong current pins and the plurality of weak current pins are respectively located on two opposite sides of the circuit board.

Preferably, the number of the driving power modules is two, the two driving power modules and the power factor correction module can be respectively electrically connected with an external MCU, and each driving power module is used for controlling one motor to operate.

Preferably, the driving power module includes a driving chip and a three-phase inverter bridge electrically connected to the driving chip, the three-phase inverter bridge includes a U-phase inverter bridge, a V-phase inverter bridge, and a W-phase inverter bridge, the U-phase inverter bridge includes a U-phase upper bridge arm and a U-phase lower bridge arm, the V-phase inverter bridge includes a V-phase upper bridge arm and a V-phase lower bridge arm, and the W-phase inverter bridge includes a W-phase upper bridge arm and a W-phase lower bridge arm.

Preferably, the U-phase upper bridge arm includes a U-phase first IGBT and a U-phase first driving resistor for driving the U-phase first IGBT to be turned on, one end of the U-phase first driving resistor is electrically connected to the driving chip, and the other end of the U-phase first driving resistor is electrically connected to the U-phase first IGBT;

the U-phase lower bridge arm comprises a U-phase second IGBT and a U-phase second driving resistor used for driving the U-phase second IGBT to be conducted, one end of the U-phase second driving resistor is electrically connected with the driving chip, and the other end of the U-phase second driving resistor is electrically connected with the U-phase second IGBT.

Preferably, the V-phase upper bridge arm includes a V-phase first IGBT and a V-phase first driving resistor for driving the V-phase first IGBT to be turned on, one end of the V-phase first driving resistor is electrically connected to the driving chip, and the other end of the V-phase first driving resistor is electrically connected to the V-phase first IGBT;

the V-phase lower bridge arm comprises a V-phase second IGBT and a V-phase second driving resistor used for driving the V-phase second IGBT to be conducted, one end of the V-phase second driving resistor is electrically connected with the driving chip, and the other end of the V-phase second driving resistor is electrically connected with the V-phase second IGBT.

Preferably, the W-phase upper bridge arm comprises a W-phase first IGBT and a W-phase first driving resistor for driving the W-phase first IGBT to be turned on, one end of the W-phase first driving resistor is electrically connected with the driving chip, and the other end of the W-phase first driving resistor is electrically connected with the W-phase first IGBT;

the W-phase lower bridge arm comprises a W-phase second IGBT and a W-phase second driving resistor used for driving the W-phase second IGBT to be conducted, one end of the W-phase second driving resistor is electrically connected with the driving chip, and the other end of the W-phase second driving resistor is electrically connected with the W-phase second IGBT.

Preferably, the semiconductor circuit further includes a plastic package housing made of a resin material, and the circuit board, the plurality of driving power modules, and the power factor correction module are all located in the plastic package housing.

Compared with the prior art, the embodiment of the utility model has the beneficial technical effects that:

the semiconductor circuit provided by the utility model integrates a plurality of driving power modules and a power factor correction module, so that the area of the integrated semiconductor circuit occupying the electric control PCB is greatly reduced, the design of the whole electric control PCB is simplified, the total cost of electric control is reduced, the anti-interference capability of the power factor correction module is improved, and the reliability of the whole electric control is improved.

Drawings

FIG. 1 is a schematic circuit diagram of a semiconductor circuit according to an embodiment of the present invention;

FIG. 2 is a functional block diagram of a semiconductor circuit, an MCU and a motor according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of a semiconductor circuit according to an embodiment of the utility model.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be illustrative of the present invention and should not be construed as limiting the present invention, and all other embodiments that can be obtained by one skilled in the art based on the embodiments of the present invention without inventive efforts shall fall within the scope of protection of the present invention.

It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.

It will also be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.

In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.

The semiconductor circuit provided by the utility model is a circuit module which integrates a power switch device, a high-voltage driving circuit and the like together and is sealed and packaged on the outer surface, and is widely applied to the field of power electronics, such as the fields of frequency converters of driving motors, various inversion voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency household appliances and the like. The semiconductor circuit herein may be referred to by various other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or hybrid integrated circuit, Power semiconductor Module, Power Module, etc. In the following embodiments of the present invention, collectively referred to as a Modular Intelligent Power System (MIPS).

Example one

Referring to fig. 1, an embodiment of the present invention provides a modular smart power system, which includes a circuit board 10, and a plurality of driving power modules 20 and a power factor correction module 30 integrally disposed on the circuit board 10, wherein the driving power modules 20 and the power factor correction module 30 are electrically connected through a common functional pin.

In this embodiment, a plurality of driving power modules 20 and a power factor correction module 30 are integrally disposed on a circuit board 10, forming a highly integrated modular smart power system. The plurality of driving power modules 20 share one power factor correction module 30, and compared with the prior art that one power factor correction module 30 is respectively integrated on each driving power module 20, the power factor correction module not only reduces the area occupation of an electric control board in the frequency conversion household appliance, so that the whole volume of the electric control board is reduced, but also greatly reduces the cost of the frequency conversion household appliance.

Furthermore, the driving power modules 20 and the power factor correction module 30 are electrically connected through a common functional pin, and the common functional pin does not affect the original functions of the driving power modules 20 and the power factor correction module 30.

Further, the number of the driving power modules 20 provided by the embodiment of the present invention may be set to two, three, four, five or six, etc., and those skilled in the art can design the driving power modules according to actual situations. For example, if three motors are provided in the variable frequency air conditioner, three driving power modules 20 need to be provided, where each driving power module 20 corresponds to one motor, and the driving power modules 20 are used for performing variable frequency control on the motors.

Example two

Referring to fig. 1, the common functional pin according to the embodiment of the utility model includes two power terminal pins and a ground terminal pin, the two power terminal pins are a VCC pin and a VDD pin respectively, and the ground terminal pin is a VSS pin. In this embodiment, each of the driving power module 20 and the power factor correction module 30 is provided with a VCC pin, a VDD pin and a VSS pin, two of the three pins are power terminal pins, and the other one is a ground terminal pin. Since the driving power modules 20 and the power factor correction module 30 share the same power source, the electrical signals input by the power source terminal pins of the driving power modules 20 and the power factor correction module 30 are the same, and the original functions of the driving power modules 20 and the power factor correction module 30 are not affected by the electrical connection between the driving power modules 20 and the power factor correction module 30 through the power source terminal pins. Meanwhile, the ground terminal pin is grounded, so that it does not affect the original functions of the driving power module 20 and the pfc module 30.

EXAMPLE III

The modular intelligent power system provided by the embodiment of the utility model further comprises a plurality of strong current pins and a plurality of weak current pins which are arranged on the circuit board 10, wherein the strong current pins and the weak current pins are respectively positioned at two opposite sides of the circuit board 10. In this embodiment, the strong current pins are distributed on one side of the circuit board 10, and the weak current pins are distributed on the other opposite side of the circuit board 10, so that the strong current and the weak current of the modular intelligent power system can be conveniently separated, and the anti-interference capability of the modular intelligent power system can be improved.

Example four

Referring to fig. 2, the number of the driving power modules 20 provided in the embodiment of the present invention is two, two driving power modules 20 and the power factor correction module 30 may be electrically connected to the external MCU respectively, and each driving power module 20 is used to control one motor to operate. In this embodiment, the number of the driving power modules 20 is set to two, and the two driving power modules 20 are respectively electrically connected with the power factor correction module 30 through shared functional pins to form a three-in-one highly integrated modular intelligent power system, which is applicable to an external unit of the inverter air conditioner, and the two driving power modules 20 contained in the three-in-one modular intelligent power system are respectively used for controlling a compressor and a fan in the external unit of the inverter air conditioner.

EXAMPLE five

Referring to fig. 1, a driving power module 20 according to an embodiment of the present invention includes a driving chip 21 and a three-phase inverter bridge 22 electrically connected to the driving chip 21, where the three-phase inverter bridge 22 includes a U-phase inverter bridge 221, a V-phase inverter bridge 222, and a W-phase inverter bridge 223, the U-phase inverter bridge 221 includes a U-phase upper bridge arm and a U-phase lower bridge arm, the V-phase inverter bridge 222 includes a V-phase upper bridge arm and a V-phase lower bridge arm, and the W-phase inverter bridge 223 includes a W-phase upper bridge arm and a W-phase lower bridge arm. In this embodiment, the U-phase inverter bridge 221, the V-phase inverter bridge 222, and the W-phase inverter bridge 223 are respectively connected to the leading-out terminals of the three-phase windings of the motor, the upper terminal of the inverter bridge is connected to the positive terminal of the dc voltage, and the lower terminal of the inverter bridge is connected to the negative terminal of the dc voltage. When the U-phase upper bridge arm is at a high level and the U-phase lower bridge arm is at a low level, the IGBT of the U-phase upper bridge arm is switched on, and the IGBT of the U-phase lower bridge arm is switched off, so that the voltage of the negative end of the U-phase inverter of the motor is about the direct-current voltage value of the inverter bridge. On the contrary, when the U-phase upper arm is at a low level and the U-phase lower arm is at a high level, the IGBT of the U-phase upper arm is turned off and the IGBT of the U-phase lower arm is turned on, so that the voltage of the U-phase negative terminal of the motor with respect to the inverter is about 0V. The V-phase inverter bridge 222 and the W-phase inverter bridge 223 have the same functions as the U-phase inverter bridge 221, and reference may be made to the description of the U-phase inverter bridge 221, which is not repeated herein.

EXAMPLE six

Referring to fig. 1, the U-phase upper bridge arm according to the embodiment of the present invention includes a U-phase first IGBTQ1 and a U-phase first driving resistor R1 for driving the U-phase first IGBTQ1 to be turned on, wherein one end of the U-phase first driving resistor R1 is electrically connected to the driving chip 21, and the other end is electrically connected to the U-phase first IGBTQ 1; the U-phase lower bridge arm comprises a U-phase second IGBTQ2 and a U-phase second driving resistor R2 used for driving the U-phase second IGBTQ2 to be conducted, one end of the U-phase second driving resistor R2 is electrically connected with the driving chip 21, and the other end of the U-phase second driving resistor R2 is electrically connected with the U-phase second IGBTQ 2. In this embodiment, the U-phase upper arm includes a U-phase first IGBTQ1 and a U-phase first driving resistor R1, the on-time of the U-phase first IGBTQ1 is controlled by the U-phase first driving resistor R1, and the U-phase lower arm includes a U-phase second IGBTQ2 and a U-phase second driving resistor R2, and the on-time of the U-phase second IGBTQ2 is controlled by the U-phase second driving resistor R2.

EXAMPLE seven

Referring to fig. 1, the V-phase upper arm according to the embodiment of the present invention includes a V-phase first IGBTQ3 and a V-phase first driving resistor R3 for driving the V-phase first IGBTQ3 to be turned on, one end of the V-phase first driving resistor R3 is electrically connected to the driving chip 21, and the other end is electrically connected to the V-phase first IGBTQ 3; the V-phase lower arm includes a V-phase second IGBTQ4Q4 and a V-phase second driving resistor R4 for driving the V-phase second IGBTQ4Q4 to be turned on, one end of the V-phase second driving resistor R4 is electrically connected to the driving chip 21, and the other end is electrically connected to the V-phase second IGBTQ4Q 4. In this embodiment, the V-phase upper arm includes a V-phase first IGBTQ3 and a V-phase first driving resistor R3, the on-time of the V-phase first IGBTQ3 is controlled by the V-phase first driving resistor R3, the V-phase lower arm includes a V-phase second IGBTQ4Q4 and a V-phase second driving resistor R4, and the on-time of the V-phase second IGBTQ4Q4 is controlled by the V-phase second driving resistor R4.

Example eight

Referring to fig. 1, the W-phase upper bridge arm according to the embodiment of the present invention includes a W-phase first IGBTQ5 and a W-phase first driving resistor R5 for driving the W-phase first IGBTQ5 to be turned on, one end of the W-phase first driving resistor R5 is electrically connected to the driving chip 21, and the other end is electrically connected to the W-phase first IGBTQ 5; the W-phase lower bridge arm comprises a W-phase second IGBTQ6 and a W-phase second driving resistor R6 used for driving the W-phase second IGBTQ6 to be conducted, one end of the W-phase second driving resistor R6 is electrically connected with the driving chip 21, and the other end of the W-phase second IGBTQ6 is electrically connected with the W-phase second IGBTQ 6. In this embodiment, the W-phase upper arm includes W-phase first IGBTQ5 and W-phase first drive resistor R5, the on-time of W-phase first IGBTQ5 is controlled by W-phase first drive resistor R5, the W-phase lower arm includes W-phase second IGBTQ6 and W-phase second drive resistor R6, and the on-time of W-phase second IGBTQ6 is controlled by W-phase second drive resistor R6.

Example nine

Referring to fig. 3, the modular smart power system according to the embodiment of the present invention further includes a plastic package housing 40 made of a resin material, and the circuit board 10, the plurality of driving power modules 20, and the power factor correction module 30 are all located in the plastic package housing 40. In this embodiment, the sealing resin may be molded by a transfer mold method using a thermosetting resin, or may be molded by an injection mold method using a thermoplastic resin. Here, the sealing resin completely seals all elements except the pins on the side of the circuit wiring layer of the circuit board 10. For a modular intelligent power system with high compactness requirement, the surface of the circuit board 10 without the circuit wiring layer is generally sealed. In the case of a modular smart power system requiring high heat dissipation, only one surface of the circuit board 10 having elements may be sealed with a sealing resin, and the other surface may be exposed.

The manufacturing method of the modular intelligent power system provided by the utility model comprises the following steps:

the method comprises the following steps: forming an aluminum material into a proper size to serve as a circuit board 10, forming textures on the back surface of the circuit board 10 in a laser etching, polishing and other modes, arranging an insulating layer on the surface of the circuit board 10, forming a copper foil on the insulating layer, and forming circuit wiring on the copper foil through etching;

step two: coating solder paste on the specific position of the circuit wiring;

step three: forming a copper material into a proper shape, and performing surface plating treatment to form the copper material as a pin, wherein specific positions of the pin are connected through a reinforcing rib 0 in order to avoid electrostatic damage of a circuit element in a subsequent processing procedure;

step four: placing circuit elements and pins on the solder paste;

step five: solidifying the solder paste by reflow soldering, and fixing the circuit element and the pin on the circuit wiring;

step six: cleaning the residual soldering flux on the circuit board 10 by cleaning modes such as spraying, ultrasonic and the like;

step seven: forming connection between the circuit element and the circuit wiring through the bonding wire;

step eight: if the circuit board 10 needs to be connected with the ground potential, the process also comprises the step of transferring the insulating layer through the transfer hole and forming connection between the ground potential of the circuit wiring and the circuit board 10 through the bonding wire;

step nine: sealing the elements by injection molding using a thermoplastic resin or transfer molding using a thermosetting resin;

step ten: cutting off the reinforcing ribs of the pins and forming the pins into required shapes;

step eleven: and carrying out necessary tests through the test equipment to complete the manufacture of the modular intelligent power system.

The above is only a part or preferred embodiment of the present invention, and neither the text nor the drawings should limit the scope of the present invention, and all equivalent structural changes made by the present specification and the contents of the drawings or the related technical fields directly/indirectly using the present specification and the drawings are included in the scope of the present invention.

Claims

1. The semiconductor circuit is characterized by comprising a circuit board, a plurality of driving power modules and a power factor correction module, wherein the driving power modules and the power factor correction module are integrally arranged on the circuit board, and the driving power modules and the power factor correction module are electrically connected through shared functional pins.

2. The semiconductor circuit according to claim 1, wherein the common function pin comprises two power terminal pins and a ground terminal pin, the two power terminal pins are a VCC pin and a VDD pin, respectively, and the ground terminal pin is a VSS pin.

3. The semiconductor circuit of claim 1, further comprising a plurality of strong current pins and a plurality of weak current pins disposed on the circuit board, the plurality of strong current pins and the plurality of weak current pins being located on opposite sides of the circuit board, respectively.

4. The semiconductor circuit according to claim 1, wherein the number of the driving power modules is two, two of the driving power modules and the power factor correction module are electrically connected to an external MCU respectively, and each of the driving power modules is configured to control an operation of a motor.

5. The semiconductor circuit according to claim 1, wherein the driving power module includes a driving chip and a three-phase inverter bridge electrically connected to the driving chip, the three-phase inverter bridge includes a U-phase inverter bridge, a V-phase inverter bridge, and a W-phase inverter bridge, the U-phase inverter bridge includes a U-phase upper leg and a U-phase lower leg, the V-phase inverter bridge includes a V-phase upper leg and a V-phase lower leg, and the W-phase inverter bridge includes a W-phase upper leg and a W-phase lower leg.

6. The semiconductor circuit according to claim 5,

the U-phase upper bridge arm comprises a U-phase first IGBT and a U-phase first driving resistor for driving the U-phase first IGBT to be conducted, one end of the U-phase first driving resistor is electrically connected with the driving chip, and the other end of the U-phase first driving resistor is electrically connected with the U-phase first IGBT;

7. The semiconductor circuit according to claim 6,

the V-phase upper bridge arm comprises a V-phase first IGBT and a V-phase first driving resistor for driving the V-phase first IGBT to be conducted, one end of the V-phase first driving resistor is electrically connected with the driving chip, and the other end of the V-phase first driving resistor is electrically connected with the V-phase first IGBT;

8. The semiconductor circuit according to claim 7,

the W-phase upper bridge arm comprises a W-phase first IGBT and a W-phase first driving resistor used for driving the W-phase first IGBT to be conducted, one end of the W-phase first driving resistor is electrically connected with the driving chip, and the other end of the W-phase first driving resistor is electrically connected with the W-phase first IGBT;

9. The semiconductor circuit according to any one of claims 1 to 8, further comprising a plastic package housing made of a resin material, wherein the circuit board, the plurality of driving power modules, and the power factor correction module are all located within the plastic package housing.