CN104767417B - Control circuit, intelligent power module and its manufacturing method of intelligent power module - Google Patents
Control circuit, intelligent power module and its manufacturing method of intelligent power module Download PDFInfo
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- CN104767417B CN104767417B CN201510130426.3A CN201510130426A CN104767417B CN 104767417 B CN104767417 B CN 104767417B CN 201510130426 A CN201510130426 A CN 201510130426A CN 104767417 B CN104767417 B CN 104767417B
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- pipes
- radiator
- integrated pipe
- power module
- wiring
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Inverter Devices (AREA)
Abstract
The present invention discloses a kind of control circuit of intelligent power module, including three upper bridge arm power devices and three lower bridge arm power devices, and U phase high drives integrated pipe, V phase high drives integrated pipe, the W phase high drive integrated pipes being correspondingly connected with respectively with described three upper bridge arm power devices, and the U phase low-voltage drivings integrated pipe, V phase low-voltage drivings integrated pipe, the W phase low-voltage driving integrated pipes that are correspondingly connected with respectively with three lower bridge arm power devices；The control circuit further includes circuit of power factor correction, and the circuit of power factor correction is connected with U, V, W phase high drive integrated pipe and U, V, W three-phase low-voltage driving integrated pipe；The invention also discloses a kind of intelligent power module and its manufacturing method, the intelligent power module is using papery radiator as carrier.Present invention decreases the volume and weights of intelligent power module, reduce cost, and have good heat dissipation effect.
Description
Technical field
The present invention relates to intelligent power module technical field more particularly to a kind of miniaturization and cost effective intelligent powers
Control circuit, intelligent power module and its manufacturing method of module.
Background technology
Intelligent power module (IPM, Intelligent Power Module) is a kind of by power electronics and integrated circuit
The power drive class product that technology combines.Intelligent power module integrates device for power switching and high-voltage driving circuit,
And interior keep the fault detection circuits such as overvoltage, overcurrent and overheat.On the one hand intelligent power module receives the control letter of MCU
Number, on the other hand driving subsequent conditioning circuit work sends the state detection signal of system back to MCU.Intelligent power module is with Qi Gaoji
The advantages such as Cheng Du, high reliability win increasing market, are particularly suitable for the frequency converter and various inversions electricity of driving motor
Source.
(A), Fig. 1 (B), Fig. 1 (C), Fig. 1 (D) and Fig. 1 (E), Fig. 1 (A) are existing intelligent power module referring to Fig.1
Circuit diagram, Fig. 1 (B) are the vertical views of existing intelligent power module, and Fig. 1 (C) is the schematic diagram after Fig. 1 (B) removal resins, figure
1 (D) is the sectional view of the X-X ' lines of Fig. 1 (B), and Fig. 1 (E) is the signal that existing intelligent power module is mounted on aluminium radiator
Figure.
Existing intelligent power module 100 includes：Circuit board 206；Insulating layer on 206 surface of the circuit board
The wiring 208 formed on 207；It is fixed on IGBT pipes 121~127 on the wiring 208, described
The components such as FRD pipes 111~118, the HVIC pipes 101；Connect the metal wire 205 of component and the wiring 208；With
The pin 201 that the wiring 208 connects；At least one side of the circuit board 206 is sealed by sealing resin 202, in order to
Leakproofness is improved, circuit board 206 can all be sealed, in order to improve thermal diffusivity, the back side of the aluminum substrate 206 can be made to expose
It is sealed in the state of to outside.
From Fig. 1 (C) as can be seen that existing intelligent power module leads to cabling by 1 piece of HVIC management and control system, 7 pieces of IGBT pipes
It is very long, interference is be easy to cause between circuit, also, since the distance from HVIC pipes to the IGBT pipes of 6 pieces of U, V, W phases is inconsistent, lead
Cause the signal transmission consistency of 6 pieces of IGBT pipes to be difficult to control, and the HVIC pipes 101 control the line-spacings of the IGBT pipes 127 compared with
Long, the delay and rising edge, failing edge when the IGBT pipes 127 also being caused to switch at high speed are all relatively slow.
In addition, because the wiring on substrate certainly will excessively increase the area of substrate, lead to existing intelligent power module
Area increase, increase the manufacturing cost of intelligent power module, affect intelligent power module in the universal of low side field.Separately
Outside, due to needing to reserve wiring area, distance is larger between leading to component, makes to generate connection between component by metal wire
Nation's line it is longer, affect the reliability of nation's line, and have the risk for having in molding process and causing to breast the tape.
Also, since distributed inductance, capacitance are larger caused by the structure of existing intelligent power module, cause switching loss very
Height, existing intelligent power module are generated heat very seriously in actual work, so thick and heavy circuit board 206 is needed to be used as radiator
The IGBT pipes and the heat dissipation of FRD pipes is helped such as to drive the occasion of frequency converting air-conditioner compressor for the application scenario that power is larger,
As shown in Fig. 1 (E), the aluminium radiator 220 of external bigger is also needed in the circuit board 106, increases intelligent power module
Material cost, transportation cost and application cost, hinder the universal of intelligent power module.
Invention content
The main purpose of the present invention is to provide a kind of control circuits of intelligent power module, to reduce the body of power module
Product, and the cost of power module is reduced, it proposes a kind of small, at low cost and has in addition, another object of the present invention also resides in
There are the intelligent power module and its manufacturing method for including above-mentioned control circuit of great heat radiation effect.
In order to achieve the above object, the present invention proposes a kind of control circuit of intelligent power module, including three upper bridge arms
Power device and three lower bridge arm power devices, and the U phases being correspondingly connected with respectively with described three upper bridge arm power devices are high
Pressure driving integrated pipe, V phase high drives integrated pipe, W phase high drive integrated pipes, and respectively with three lower bridge arm power devices
U phase low-voltage drivings integrated pipe that part is correspondingly connected with, V phase low-voltage drivings integrated pipe, W phase low-voltage driving integrated pipes；The control electricity
Road further includes circuit of power factor correction, the circuit of power factor correction respectively with U, V, W phase high drive integrated pipe
It is connected with U, V, W three-phase low-voltage driving integrated pipe.
Preferably, described three upper bridge arm power devices are respectively the first power device, the second power device, third power
Device, three lower bridge arm power devices are respectively the 4th power device, the 5th power device, the 6th power device；
First power device includes the first IGBT pipes and the first FRD pipes, and second power device includes second
IGBT is managed and the 2nd FRD pipes, and the third power device includes the 3rd IGBT pipes and the 3rd FRD pipes, the 4th power device
Including the 4th IGBT pipes and the 4th FRD pipes, the 5th power device is managed including the 5th IGBT and the 5th FRD pipes, and the described 6th
Power device includes the 6th IGBT pipes and the 6th FRD pipes；
U, V, W three-phase high-voltage driving integrated pipe includes power end, input, output end, high voltage power supply anode, high pressure
Power supply negative terminal and ground terminal, it includes power end that U, V, W three-phase low-voltage, which drives integrated pipe and the low-voltage driving integrated pipe, defeated
Enter end, output and ground, the circuit of power factor correction includes power end and ground terminal；
The input terminal of U, V, W three-phase high-voltage driving tube is respectively as on U, V, W three-phase of the intelligent power module
Bridge arm input terminal；U, V, W three-phase of the input terminal of U, V, W three-phase low-voltage driving tube respectively as the intelligent power module
Lower bridge arm input terminal；
The power end and the work(of U, V, W three-phase high-voltage driving tube and U, V, W three-phase low-voltage driving integrated pipe
The power end of rate factor correcting circuit is connected and the anode of low-pressure area power supply as the intelligent power module, the U,
V, the ground terminal and the circuit of power factor correction of W three-phase high-voltages driving tube and U, V, W three-phase low-voltage driving integrated pipe
The negative terminal that is connected as the low-pressure area power supply of the intelligent power module of ground terminal, U, V, W three-phase high-voltage drives
Anode of the high voltage power supply anode of pipe respectively as U, V, W three-phase high-voltage area power supply of the intelligent power module；
The output end of the U phases high drive integrated pipe is connected with the grid of the first IGBT pipes, and the U phases high pressure is driven
The high voltage power supply negative terminal of dynamic integrated pipe and the emitter-base bandgap grading of the first IGBT pipes, anode, the 4th IGBT of the first FRD pipes
The collector of pipe, the cathode of the 4th FRD pipes are connected, and as the U phases higher-pressure region power supply of the intelligent power module
Negative terminal；The output end of the V phases high drive integrated pipe is connected with the grid of the 2nd IGBT pipes, and the V phases high pressure is driven
The high voltage power supply negative terminal of dynamic integrated pipe and the emitter-base bandgap grading of the 2nd IGBT pipes, anode, the 5th IGBT of the 2nd FRD pipes
The collector of pipe, the cathode of the 5th FRD pipes are connected, and as the V phases higher-pressure region power supply of the intelligent power module
Negative terminal；The output end of the W phases high drive integrated pipe is connected with the grid of the 3rd IGBT pipes, and the W phases high pressure is driven
The high voltage power supply negative terminal of dynamic integrated pipe and the emitter-base bandgap grading of the 3rd IGBT pipes, anode, the 6th IGBT of the 3rd FRD pipes
The collector of pipe, the cathode of the 6th FRD pipes are connected, and as the W phases higher-pressure region power supply of the intelligent power module
Negative terminal；
The collector of the first IGBT pipes, the cathode of the first FRD pipes, the collector of the 2nd IGBT pipes, institute
State the cathode of the 2nd FRD pipes, the collector of the 3rd IGBT pipes, the cathode of the 3rd FRD pipes, high power FRD pipes
Cathode is connected, and as the high voltage input terminal of the intelligent power module；
The output end of the U phases low-voltage driving integrated pipe is connected with the grid of the 4th IGBT pipes, the 4th IGBT pipes
Emitter-base bandgap grading is connected with the anode of the 4th FRD pipes, and as the U phase low pressure reference edges of the intelligent power module, and the V phases are low
The output end of pressure driving integrated pipe is connected with the grid of the 5th IGBT pipes, emitter-base bandgap grading and the 5th FRD of the 5th IGBT pipes
The anode of pipe is connected, and as the V phase low pressure reference edges of the intelligent power module, the W phases low-voltage driving integrated pipe it is defeated
Outlet is connected with the grid of the 6th IGBT pipes, and the emitter-base bandgap grading of the 6th IGBT pipes is connected with the anode of the 6th FRD pipes, and makees
For the W phase low pressure reference edges of the intelligent power module.
Preferably, the circuit of power factor correction includes a High Speed I GBT pipes, a high power FRD pipes, a small-power FRD
Pipe and the first low-voltage driving integrated pipe；
The first low-voltage driving integrated pipe includes input, output end, power end and ground terminal；
Input terminal of the input terminal of the first low-voltage driving integrated pipe as the circuit of power factor correction；Described
Power end of the power end of one low-voltage driving integrated pipe as the circuit of power factor correction, first low-voltage driving are integrated
Ground terminal of the ground terminal of pipe as the circuit of power factor correction；
The input terminal of the first low-voltage driving integrated pipe is connected with the grid of the High Speed I GBT pipes, the High Speed I GBT
The emitter-base bandgap grading of pipe is connected with the anode of the small-power FRD pipes, the collector of the High Speed I GBT pipes and the small-power FRD pipes
Cathode, the anode of the high power FRD pipes are connected.
The present invention also proposes a kind of intelligent power module, including wiring, metal wire and is set to the wiring
On power component, the wiring, the metal wire and the power component constitute the control of the intelligent power module
Circuit.
Preferably, the intelligent power module further includes the papery radiator as carrier, and the one side of the radiator is made
It is covered with insulating layer for front, the one side far from the radiator is arranged on the insulating layer in the wiring, described to dissipate
The another side of hot device is provided with the gauffer for heat dissipation, the distance at each edge of the gauffer away from the radiator as the back side
At least 1.5mm.
Preferably, the intelligent power module further includes configuring the non-power element on the wiring and configuring to exist
The power module edge, the pin for connecting and being extended outwardly as input and output with the wiring, the wiring,
The power component and non-power element, the metal wire and pin and the wiring coupling part by setting
Fat encapsulates.
Preferably, the radiator and the gauffer are wet type carbon composite functional paper, the thickness of the radiator
Degree is 1.5mm~2.5mm；The thickness of the radiator is more than the thickness of the gauffer.
The invention also provides a kind of manufacturing methods of above-mentioned intelligent power module, include the following steps：
Papery radiator is formed, in the front covering insulating layer of the radiator, wiring is formed in surface of insulating layer；
In surface-mounted corresponding IGBT pipes, FRD pipes and the ready-made pin of the wiring；
Corresponding high drive integrated pipe, low-voltage driving integrated pipe are installed in the emitter-base bandgap grading position of the IGBT pipes；
The IGBT is managed by metal wire, FRD pipes, the high drive integrated pipe, the low-voltage driving integrate
Pipe and the wiring connect to form corresponding control circuit；
The front of the radiator is sealed by sealing resin；
Ready-made gauffer is covered at the back side of the radiator.
Preferably, the step of surface-mounted IGBT in the wiring is managed, FRD is managed and ready-made pin
Further include before：
The independent pin with coating is made；It specifically includes：
Copper base material is chosen to make pin in a row to Copper base material by way of punching press or etching, pass through reinforcement between pin
Muscle connects；
Nickel layer and nickeltin layer are sequentially formed in the pin surface, obtains the pin with coating.
Preferably, the formation papery radiator, in the front covering insulating layer of the radiator, in surface of insulating layer shape
Include at the step of wiring：
The wet type carbon composite that predetermined size is chosen according to the circuit layout of setting forms papery radiator；
In the front of radiator, using insulating materials and copper material, by way of hot pressing, insulating materials is set to be formed in described
The surface of radiator and as the insulating layer, makes copper material be formed in the surface of the insulating layer as copper foil layer；
The specific position of the copper foil layer is eroded, remainder forms wiring；
It is described to include the step of the back side of the radiator covers ready-made gauffer：
Gauffer is formed using wet type carbon composite, the back side of the radiator is adhered to by high temperature resistant cement.
The present invention proposes a kind of control circuit of intelligent power module, intelligent power module and its manufacturing method, intelligence
The low-pressure area driving circuit of power module realizes that higher-pressure region driving circuit is integrated by high drive by low-voltage driving integrated pipe
Pipe realizes that low-voltage driving integrated pipe can realize that high drive is integrated by low pressure process such as the BIPOLAR or COMS of low cost
Guan Ze realizes that the former process costs are only the 1/3 of the latter, significantly reduce intelligent power by high-pressure process such as BCD or SOI
The manufacturing cost of module.
Moreover, the intelligent power module of the present invention is matched by separate high drive integrated pipe or low-voltage driving integrated pipe
It sets on corresponding IGBT pipes, can accomplish one from high drive integrated pipe or low-voltage driving integrated pipe to the cabling of IGBT tube grids
It causes, to can effectively ensure that the consistency of six pieces of IGBT pipe dynamic characteristics, and one piece of IGBT for Active PFC
Rising edge and failing edge can be accomplished very suddenly, and can largely save the area of wiring, to make intelligent power module
The area of circuit board substantially reduce, so that the cost of intelligent power module is further decreased.
In addition, due to may be used smaller inductance and capacitance due to the power module architectures of the present invention, and distributed inductance
Reduction with capacitance makes the dynamic power consumption of the intelligent power module of the present invention be greatly reduced, and the present invention uses papery radiator
Replace circuit board, replaces aluminium radiator using heat dissipation gauffer, reduce the weight of intelligent power module, material cost, transport
Cost also declines therewith.
Description of the drawings
Fig. 1 (A) is the circuit diagram of existing intelligent power module；
Fig. 1 (B) is the vertical view of existing intelligent power module；
Fig. 1 (C) is the schematic diagram after Fig. 1 (B) removal resins；
Fig. 1 (D) is the sectional view of the X-X ' lines of Fig. 1 (B)；
Fig. 1 (E) is the schematic diagram that existing intelligent power module is mounted on aluminium radiator；
Fig. 2 (A) is the circuit diagram of intelligent function module preferred embodiment of the present invention；
Fig. 2 (B) is the vertical view of intelligent function module preferred embodiment of the present invention；
Fig. 2 (C) is the sectional view of the X-X ' lines of Fig. 2 (B)；
Fig. 2 (D) is that intelligent function module of the embodiment of the present invention removes the front plan view after sealing resin；
Fig. 3 (A) is the first step of the embodiment of the present invention in the front formation insulating layer of papery radiator and bowing for copper foil layer
View；
Fig. 3 (B) is the side view of Fig. 3 (A)；
Fig. 4 (A) is to install bowing for IGBT pipes, FRD pipes and pin in the second step of the embodiment of the present invention on wiring
View；
Fig. 4 (B) is the side view of Fig. 4 (A)；
Fig. 5 (A) is the emitter-base bandgap grading installation high drive integrated pipe and low pressure in IGBT pipes in the third step of the embodiment of the present invention
Drive the vertical view of integrated pipe；
Fig. 5 (B) is the side view of Fig. 5 (A)；
Fig. 6 (A) is to make power component, non-power element, radiator by metal wire in the fourth step of the embodiment of the present invention
The vertical view of connection is formed between wiring；
Fig. 6 (B) is the side view of Fig. 6 (A)；
Fig. 7 is to seal the sectional view of papery radiator by sealing resin using mold in the 5th process of the embodiment of the present invention；
Fig. 8 (A) is the schematic diagram of pin Trim Molding in the 6th process of the embodiment of the present invention；
Fig. 8 (B) is the schematic diagram of installation heat dissipation gauffer in the 6th process of the embodiment of the present invention；
Fig. 9 is the flow chart of intelligent power module manufacturing method of the embodiment of the present invention.
In order to keep technical scheme of the present invention clearer, clear, it is described in further detail below in conjunction with attached drawing.
Specific implementation mode
It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
It is the circuit diagram of intelligent function module preferred embodiment of the present invention with reference to shown in Fig. 2 (A)；
Intelligent function mould proposed by the present invention U phases high drive integrated pipe 41 in the block, V phase high drives integrated pipe 42, W
Phase high drive integrated pipe 43 is three pieces of single armed HVIC pipes for driving bridge arm IGBT pipes, their structure is identical, makees
With being that the logical signal of 0~5V of input terminal HIN is passed to output end HO, wherein HO is the logical signal of VS~VS+15V；By
Change between 0~300V in the meeting of VS, so the U phases high drive integrated pipe 41, the V phases high drive integrated pipe
42, the W phases high drive integrated pipe 43 needs high voltage bearing flow technique to realize, sometimes for cost is reduced, uses 650V
BCD techniques, sometimes for reduce pressure-resistance structure design difficulty, use the SOI technology of 650V.
Intelligent function mould proposed by the present invention U phases low-voltage driving integrated pipe 44 in the block, V phase low-voltage drivings integrated pipe 45, W
Phase low-voltage driving integrated pipe 46 is the single armed LVIC pipes of three pieces of driving lower bridge arm IGBT pipes, their structure is identical, effect
It is that the logical signal of 0~5V of input terminal LIN is passed into output end LO, wherein LO is the logical signal of 0~15V；Due to the U
Phase low-voltage driving integrated pipe 44, the V phases low-voltage driving integrated pipe 45, the W phases low-voltage driving integrated pipe 46 do not need resistance to height
The flow technique of pressure is realized, sometimes for cost is reduced, is made sometimes for consistency is improved using the Bipolar techniques of 20V
With the BCD techniques of 20V.
Intelligent function mould the first low-voltage driving integrated pipe 47 in the block proposed by the present invention is driving power factor correcting electricity
The single armed LVIC of the High Speed I GBT pipes 27 of road part carries out flow to save cost using the Bipolar techniques of 20V, for
Power consumption consideration is reduced, the BCD techniques of 20V can also be used.
Intelligent function mould the first IGBT in the block proposed by the present invention is managed, the 2nd IGBT pipes, the 3rd IGBT are managed, the 4th IGBT
Pipe, the 5th IGBT pipes, the 6th IGBT pipes, the first FRD pipes, the 2nd FRD pipes, the 3rd FRD pipes, the 4th FRD pipes, the 5th FRD pipes, the
Six FRD pipes distinguish corresponding diagram in IGBT pipes 21, IGBT pipes 22, IGBT pipes 23, IGBT pipes 24, IGBT pipes 25, IGBT pipes 26,
FRD pipes 11, FRD pipes 12, FRD pipes 13, FRD pipes 14, FRD pipes 15, FRD pipes 16.
VCC (i.e. power end), the V of the U phases high drive integrated pipe 41, the U phases low-voltage driving integrated pipe 44
Phase high drive integrated pipe 42, the VCC of the V phases low-voltage driving integrated pipe 45, the W phases high drive integrated pipe 43, the W
Phase low-voltage driving integrated pipe 44, the VCC of PFC driving integrated pipes 47 are connected, and as the VDD of the intelligent power module 10
End, VDD is the low-pressure area power supply of the intelligent power module 10, and VDD is generally 15V.
The ends HIN (i.e. input terminal) of the U phases high drive integrated pipe 41 are as in the U phases of the intelligent power module 10
Bridge arm input terminal UHIN.
The ends HIN of the V phases high drive integrated pipe 42 are as bridge arm input terminal in the V phases of the intelligent power module 10
VHIN。
The ends HIN of the W phases high drive integrated pipe 43 are as bridge arm input terminal in the W phases of the intelligent power module 10
WHIN。
The ends LIN (i.e. input terminal) of the U phases low-voltage driving integrated pipe 44 are as under the U phases of the intelligent power module 10
Bridge arm input terminal ULIN.
V phase lower bridge arm input terminal of the ends LIN of the V phases low-voltage driving integrated pipe 45 as the intelligent power module 10
VLIN。
W phase lower bridge arm input terminal of the ends LIN of the W phases low-voltage driving integrated pipe 46 as the intelligent power module 10
WLIN。
PFC electricity of the ends PIN of the first low-voltage driving integrated pipe 47 as the intelligent power module 10
The input terminal PFCIN on road (pfc circuit).
Here, totally seven tunnels input the input signal for receiving 0~5V for U, V, W three-phase and PFC of the intelligent power module 10.
The ends GND (i.e. ground terminal) of the U phases high drive integrated pipe 41, the ends GND of V phase high drives integrated pipe 42, W
The ends GND of phase high drive integrated pipe 43, the ends GND of the U phases low-voltage driving integrated pipe 44, the V phases low-voltage driving are integrated
The ends GND of pipe 45, the ends GND of the W phases low-voltage driving integrated pipe 46, the GND of the first low-voltage driving integrated pipe 47 are connected,
And as the ends COM of the intelligent power module 10, COM is the negative terminal of VDD power supplies.
The ends VB (i.e. high voltage power supply anode) of the U phases high drive integrated pipe 41 are as the intelligent power module 10
U phases higher-pressure region power supply anode UVB.
The ends VB of the V phases high drive integrated pipe 42 power electric as the V phases higher-pressure region of the intelligent power module 10
Source anode VVB.
The ends VB of the W phases high drive integrated pipe 41 power electric as the W phases higher-pressure region of the intelligent power module 10
Source anode WVB.
The ends HO (i.e. output end) of the U phases high drive integrated pipe 41 are connected with the grid of IGBT pipes 21, and the U phases are high
It is managed with the emitter-base bandgap grading of the IGBT pipes 21, the anode of FRD pipes 11, IGBT at the ends VS (i.e. high voltage power supply negative terminal) of pressure driving integrated pipe 41
24 collector, the cathode of FRD pipes 14 are connected, and as the U phases higher-pressure region power supply negative terminal of the intelligent power module 10
UVS。
The ends HO of the V phases high drive integrated pipe 42 are connected with the grid of IGBT pipes 22, and the V phases high drive is integrated
The ends VS of pipe 42 and the emitter-base bandgap grading of the IGBT pipes 22, the cathode phase of the anode of FRD pipes 12, the collector of IGBT pipes 25, FRD pipes 15
Even, and as the V phases higher-pressure region power supply negative terminal VVS of the intelligent power module 10.
The ends HO of the W phases high drive integrated pipe 43 are connected with the grid of IGBT pipes 23, and the W phases high drive is integrated
The ends VS of pipe 43 and the emitter-base bandgap grading of the IGBT pipes 23, the cathode phase of the anode of FRD pipes 13, the collector of IGBT pipes 26, FRD pipes 16
Even, and as the W phases higher-pressure region power supply negative terminal WVS of the intelligent power module 10.
The collector of the IGBT pipes 21, the cathode of the FRD pipes 11, the collector of the IGBT pipes 22, FRD pipes
12 cathode, the collector of the IGBT pipes 23, the cathode of the FRD pipes 13, the cathode of high power FRD pipes 18 are connected, and make
300V is generally met for high voltage the input terminal P, P of the intelligent power module 10.
The ends LO of the U phases low-voltage driving integrated pipe 44 are connected with the grid of IGBT pipes 24, the emitter-base bandgap grading of the IGBT pipes 24
It is connected with the anode of FRD pipes 14, and as the U phase low reference voltages end UN of the intelligent power module 10.
The ends LO of the V phases low-voltage driving integrated pipe 45 are connected with the grid of IGBT pipes 25, the emitter-base bandgap grading of the IGBT pipes 25
It is connected with the anode of FRD pipes 15, and as the V phase low reference voltages end VN of the intelligent power module 10.
The ends LO of the W phases low-voltage driving integrated pipe 46 are connected with the grid of IGBT pipes 26, the emitter-base bandgap grading of the IGBT pipes 26
It is connected with the anode of FRD pipes 16, and as the W phase low reference voltages end WN of the intelligent power module 10.
The ends POUT of the first low-voltage driving integrated pipe 47 are connected with the grid of High Speed I GBT pipes 27, the High Speed I GBT
The emitter-base bandgap grading of pipe 27 is connected with the anode of small-power FRD pipes 17, and collector and the small-power FRD of the High Speed I GBT pipes 27 are managed
17 cathode, the anode of the high power FRD pipes 18 are connected.Small-power FRD pipes 17 herein are not required in that, in others
This component can not be accessed in embodiment.
With reference to Fig. 2 (B), Fig. 2 (C), Fig. 2 (D), Fig. 2 (B) is the vertical view of intelligent function module preferred embodiment of the present invention
Figure, Fig. 2 (C) is the sectional view of the X-X ' lines of Fig. 2 (B), and figure (D) is that intelligent function module of the embodiment of the present invention removes sealing resin
Front plan view afterwards.
The intelligent power module 10 of the present invention has the papery radiator 306 being formed on the surface by insulating layer 307, matches
It sets the wiring 308 on the insulating layer 307, configures IGBT pipes 21 on the wiring 308, described
IGBT pipes 22, the IGBT pipes 23, the IGBT pipes 24, the IGBT pipes 25, the IGBT pipes 26, the High Speed I GBT pipes 27
With the FRD pipes 11, the FRD pipes 12, the FRD pipes 13, the FRD pipes 14, the FRD pipes 15, the FRD pipes 16, institute
Small-power FRD pipes 17, high power FRD pipes are stated, the pin 301 in the marginal portion of the wiring 18 is configured, wherein：
The one side of the radiator 306 is as front, and another side is as the back side.
It is covered with insulating layer 307 in the front of radiator 306, the wiring 308 is arranged on the insulating layer 307
One side far from radiator 306.
At the back side of the radiator 306, it is provided with the gauffer 320 for heat dissipation.
Wherein, wet type carbon composite functional paper may be used in the radiator 306 and gauffer 320.
The radiator 306 can be bonded by high temperature glue with the gauffer 320, or can also one system of the two
At.
In addition, the intelligent power module 10 further includes：Configure the pin in the marginal portion of the wiring 308
301, make to form the metal wire 305 of electrical connection between above-mentioned each element for connecting, and seal the circuit and papery is at least completely covered
The sealing resin 302 of all elements described in 306 upper surface of radiator.
In addition, the intelligent power module 10 further includes：For connecting the wiring 308, the IGBT pipes 21, institute
State IGBT pipes 22, the IGBT pipes 23, the IGBT pipes 24, the IGBT pipes 25, the IGBT pipes 26 and the FRD pipes 11,
The FRD pipes 12, the FRD pipes 13, the FRD pipes 14, the FRD pipes 15, the FRD pipes 16, the FRD pipes 17 are to constitute
The metal wire 305 of related circuit.
In addition, the intelligent power module 10 further includes：Configuration is in the power module edge and the wiring
308 pins 301 for connecting and extending outwardly as input and output.
Here, can be configured according to 10 internal circuit of intelligent power module layout and peripheral applications needs, the pin 301
In an edge of intelligent power module 10, two edges, three edges or four edges.
10 each integral part of intelligent power module of the embodiment of the present invention detailed below：
Papery radiator 306 is wet type carbon composite functional paper, can be added by powder and the Fiber Shape Carbon Material are compound
Work simultaneously can be folded into arbitrary shape, obtain the heat dissipation wrinkle as needed at graphite, tolerable 350 DEG C or more of the high temperature of material
Pleat 320.In order to improve corrosion resistance and waterproof, surface can carry out water-proofing treatment；The papery radiator 306 and with the heat dissipation
Gauffer 320 is made into integration, wherein 306 shape of papery radiator is smooth, the heat dissipation gauffer 320 is in irregular shape；It is described
Papery radiator 306 and with it is described heat dissipation gauffer 320 or using different-thickness wet type carbon composite, this implementation
Example has used the mode of different-thickness, wherein in order to increase mechanical strength, the papery radiator 306 uses thicker wet
Formula carbon composite, thickness may be designed as 1.5mm, in order to reduce cost and increase the density of gauffer, the heat dissipation gauffer 320
Relatively thin wet type carbon composite is used, thickness may be designed as 0.5mm.Here, the papery radiator 306 has institute
The one side for stating heat dissipation gauffer 320 is known as the back side of the papery radiator 306, and opposite face is known as the papery radiator 306
Surface.Here, the back side of the papery heat dissipation 17 cannot be completely covered in the heat dissipation gauffer 320, in the papery radiator 306
The edge at the back side need to reserve the smooth position of at least 1.5mm.
The insulating layer 307 covers 306 1 surfaces of the papery radiator, and referred to as the papery radiator 306 is being just
Face is formed, and the fillers such as high concentration filling aluminium oxide improve thermal conductivity in the resin materials such as epoxy resin, can also be added two
Silica, silicon nitride, silicon carbide etc. are adulterated to reach higher thermal conductivity, here, doping can be spherical or angular, pass through heat
Pressure mode is pressed together on the surface of the papery radiator 306.
The wiring 308 is made of metals such as copper, the specific position being formed on the papery radiator 306, root
It is needed according to power, may be designed to the thickness of 0.035mm or 0.07mm etc., for general intelligent power module, pay the utmost attention to set
0.07mm is counted into, the thickness of 0.07mm is used in the present embodiment.Particularly, it at the edge of the papery radiator 306, is formed with
The wiring 308 for configuring the pin 301.Here, being arranged near the both sides of the papery radiator 306 more
A wiring 308 for configuring the pin 301 also can be in the papery radiator 306 according to function needs
On one side, both sides, three while, four while near be arranged it is multiple for configuring the wirings 308 of the pin 301.
The IGBT pipes 21~27 and FRD pipes 11~18, which are fixed on the wiring 308, constitutes defined circuit.
Here, the face-up face-down installation with collector with emitter-base bandgap grading and grid of 7 pieces of IGBT pipes, the FRD pipes
Face-up face-down installation with cathode with anode.
The HVIC pipes 41 are fixed on the IGBT pipes 21, and the HVIC pipes 42 are fixed on the IGBT pipes 22, institute
It states HVIC pipes 43 to be fixed on the IGBT pipes 23, the LVIC pipes 44 are fixed on the IGBT pipes 24, the LVIC pipes 45
It is fixed on the IGBT pipes 25, the LVIC pipes 46 are fixed on the IGBT pipes 26.Here, the HVIC pipes and LVIC pipes
Fixed position is the emitter-base bandgap grading of IGBT pipes on IGBT pipes, the IGBT of general 30A is managed, the area of emitter-base bandgap grading will not be less than
6mm2, for general single armed HVIC pipes and single armed LVIC pipes, area is not more than 2mm2。
The metal wire 305 can be aluminum steel, gold thread or copper wire, make each circuit element and wiring 308 by bonding
Between establish electrical connection, be additionally operable to that the pin 301 and the wiring 308 is made to establish electrical connection sometimes.
The pin 301 is fixed on the wiring 308 at 306 edge of papery radiator, tool
Play the role of for example being inputted with outside, export.Here, being designed to that opposite both sides are equipped with a plurality of pin 301, pin 301
Pass through the conductive electrically binder welding such as scolding tin with wiring 308.The pin 301 is generally made of metals such as copper, copper
Surface forms one layer of nickeltin layer by chemical plating and plating, and the thickness of alloy-layer is generally 5 μm, coating can protect copper not by
Corrosion oxidation, and weldability can be improved.
The resin 302 can also be used injection mould mode to use heat by transmitting mould mode using thermosetting resin molding
Plastic resin moulds.
Compared with prior art, the intelligent power module 10 of the embodiment of the present invention has the advantages that：
1, the low-pressure area driving circuit of intelligent power module realizes that higher-pressure region driving circuit is managed by HVIC by LVIC pipes
It realizes, LVIC pipes can realize that HVIC pipes then pass through BCD or SOI etc. by low pressure process such as the BIPOLAR or COMS of low cost
High-pressure process realizes that the former process costs are only the 1/3 of the latter, reduce the manufacturing cost of intelligent power module.
2, intelligent power module of the invention is managed by separate HVIC or the configuration of LVIC pipes is on corresponding IGBT pipes, from
HVIC is managed or the cabling of LVIC pipes to IGBT tube grids can be accomplished unanimously, to can effectively ensure that 6 pieces of IGBT pipe dynamic characteristics
Consistency, the rising edge and failing edge of one piece of IGBT for Active PFC can be accomplished very steep, and largely save
Power saving road wiring area, to reduce intelligent power module circuit board area, make intelligent power module at
Originally it further decreases.
3, due to may be used smaller inductance and capacitance due to the power module architectures of the present invention, and distributed inductance and electricity
The reduction of appearance makes the dynamic power consumption of the intelligent power module of the present invention be greatly reduced, and the present invention is replaced using papery radiator
Circuit board replaces aluminium radiator using heat dissipation gauffer, so that the weight of intelligent power module is reduced, material cost, transportation cost
Also decline therewith.
It can be seen from the above, the intelligent power module 10 of the present invention is while cost is reduced, volume and weight is reduced, is carried
High heat dissipation effect.
In addition, one embodiment of the invention also proposes a kind of 10 manufacturing method of intelligent power module, including：
Step S1 forms papery radiator 306, in the front covering insulating layer 307 of the radiator 306, in insulating layer
307 circuit forming surfaces wiring 308；
Specifically, the wet type carbon composite for predetermined size being chosen according to the circuit layout of setting forms papery radiator
306。
In the front of radiator 306, using insulating materials and copper material, by way of hot pressing, insulating materials is made to be formed in
The surface of the radiator 306 and as the insulating layer 307, makes copper material be formed in the surface of the insulating layer 307 as copper
Layers of foil.
Later, the specific position of copper foil layer is eroded, remainder forms wiring 308.
Step S2 is made in the surface-mounted IGBT pipes 21~27 of the wiring 308, FRD pipes 11~18 and in advance
Pin 301；
Step S3 is managed in the emitter-base bandgap grading position of the IGBT pipes 21~26 installation HVIC pipes 41~43, LVIC44~47 respectively；
Step S4, by metal wire 305 by IGBT pipes 21~27, FRD pipes 11~18, HVIC pipes 41~43, LVIC pipes 44
~47 and the wiring 308 connection form corresponding circuit；
Step S5 is sealed the front of the radiator 306 by sealing resin 302；
Step S6 covers gauffer 320 at the back side of the radiator 306；
Specifically, gauffer 320 is formed using wet type carbon composite, the radiator is adhered to by high temperature resistant cement
306 back side.
Further, can also include before step S2：
The independent pin 301 with coating is made in step S7.
Specifically, first, it chooses Copper base material and makes pin 301 in a row to Copper base material by way of punching press or etching,
It is connected by reinforcing rib between pin 301.
Then, nickel layer and nickeltin layer are sequentially formed on 301 surface of the pin, obtains the pin 301 with coating.
Further, further include after above-mentioned steps S6：
Step S8 carries out the Trim Molding of the pin 301, and carries out functions of modules test.
The manufacturing process of the present embodiment intelligent power module 10 is described in detail referring to the drawings：
As a kind of preferred embodiment, the manufacturing method of intelligent power module 10 of the present invention may include：It radiates in papery
The process of insulating layer 307 is set on 306 surface of device；308 process of wiring is formed on the surface of insulating layer 307；In circuit
The process of wiring 308 configuration IGBT pipes 21~27 and FRD pipes 11~18；HVIC pipes 41~43, LVIC pipes are configured on IGBT pipes
The process that 44~46 and PFC drives integrated pipe 47；The work of each circuit element and the wiring 306 is connected with metal wire 305
Sequence；The process toasted and moulded；Molding process is carried out to pin 301；The process for carrying out functional test.Specific process chart is as schemed
Shown in 9.
Illustrate the details of above-mentioned each process below.
The first step：With reference to Fig. 3 (A) and Fig. 3 (B).
Fig. 3 (A) is the first step of the embodiment of the present invention in the front formation insulating layer of papery radiator and bowing for copper foil layer
View, Fig. 3 (B) are the side views of Fig. 3 (A).
The first step of the embodiment of the present invention is insulating layer to be formed on sizeable radiator made of paper and in insulating layer table
The process that face forms wiring.
First, with reference to vertical view 3 (A) and side view 3 (B), circuit layout as needed prepares sizeable papery
Radiator 306, can choose general intelligent power module the size of 44mm × 20mm, and two sides carries out corrosion protection processing.In aluminium
The surface of at least one side of substrate is equipped with insulating layer 307.In addition, the surface mount in insulating layer has the copper as conductive pattern
Foil.Then the copper foil that the process manufactures is etched, locally removes copper foil, form wiring 308.
Here, the formation of sizeable radiator made of paper can be by directly the side such as being punched out to the proximate matter of 1m × 1m
Formula is formed, and also can shear to be formed by the proximate matter of first 1m × 1m.
The second step：With reference to Fig. 4 (A) and Fig. 4 (B).Fig. 4 (A) is in the second step of the embodiment of the present invention in wiring
The vertical view of upper installation IGBT pipes, FRD pipe and pin, Fig. 4 (B) is the side view of Fig. 4 (A).
The second step of the present invention is that IGBT pipes 21~27, FRD pipes 11~18 and pin are installed on wiring 308
301 process.
With reference to Fig. 4 (A) and Fig. 4 (B), by solders such as tin creams by IGBT pipes 21~27, FRD pipes 11~18 and pin 301
Mounted on the specified position of wiring 308.
Here, in order to reduce the voidage after tin cream welding, and carry out cost control, it may be considered that using with nitrogen
The reflow ovens of protection carry out tin cream and fix, if cost allows, it is also contemplated that using the form of vacuum back-flow.The thawing of tin cream
Temperature is generally 280 DEG C or so.
Each pin 301 is that pin 301 is made by way of punching press or etching with Copper base material, then, is passed through
The method of chemical plating forms nickel layer in pin surface, specifically includes：
By nickel salt and sodium hypophosphite mixed solution, and it is added to complexing agent appropriate, is forming specific shape
Copper material surface forms nickel layer, and metallic nickel has very strong passivation ability, can be quickly generated one layer of very thin passivating film, can resist big
The corrosion of gas, alkali and certain acid.Nickel plating crystallization is superfine small, and nickel layer thickness is generally 0.1 μm.
Then by hydrosulphate technique, at room temperature by the copper material for having formed shape and nickel layer be immersed in positive tin from
It is powered in the plating solution of son, nickeltin layer is formed on nickel layer surface, alloy-layer general control is at 5 μm, the formation of alloy-layer
Greatly improve the protectiveness and solderability of pin.
The third step：With reference to figure 5 (A) and Fig. 5 (B), Fig. 5 (A) is in the third step of the embodiment of the present invention in IGBT pipes
Emitter-base bandgap grading installs the vertical view of HVIC pipe and LVIC pipes, and Fig. 5 (B) is the side view of Fig. 5 (A).
The third step of the present invention is in the emitter-base bandgap grading position of IGBT pipes 21~27 installation HVIC pipes 41~43 and LVIC pipes 44
The process that~46 and PFC drives integrated pipe 47.
First, with reference to Fig. 5 (A) and Fig. 5 (B), HVIC pipes 41 is installed on IGBT pipes 21, HVIC is installed on IGBT pipes 22
Pipe 42 installs HVIC pipes 43 on IGBT pipes 23, and HVIC pipes 44 are installed on IGBT pipes 24, and HVIC pipes are installed on IGBT pipes 25
45, HVIC pipes 46 are installed on IGBT pipes 26, PFC is installed on High Speed I GBT pipes 27 and drives integrated pipe 47.
Here, if the back side of HVIC pipes and LVIC pipes is not the electrodes such as GND, conductive elargol etc. can be used
As fixed material, if if the back side of HVIC pipes and LVIC pipes is the electrodes such as GND, dielectric red glue etc. can be used
As fixed material.
Secondly, the form toasted by 175 DEG C, by elargol or red adhesive curing, here, the solidification temperature of elargol or red glue is
170 DEG C or so, hardening time is about 2 hours.Because baking temperature is far below the melt temperature of tin cream, in this heating process
In, do not interfere with the welding effect of IGBT pipes, FRD pipe and pin.
The fourth step：It is to pass through metal wire in the fourth step of the embodiment of the present invention with reference to Fig. 6 (A) and Fig. 6 (B), Fig. 6 (A)
It is the side view of Fig. 6 (A) to make the vertical view that connection is formed between power component, non-power element, radiator and wiring, Fig. 6 (B)
Figure.
The fourth step of the present invention is to form electrical connection between circuit element and wiring 308 by metal wire 305
Process.
With reference to Fig. 6 (A) and Fig. 6 (B), IGBT pipes 21~27, FRD pipes 11~18, HVIC pipes 41~43, LVIC pipes 44 are carried out
~46, PFC drives integrated pipe 47 to be connected with nation's line of wiring 308.
According to through-current capability needs, select the aluminum steel of appropriate diameter as bonding line, for the part controlled for signal,
Such as HVIC pipes and LVIC pipes, also contemplate for using 15 μm of gold thread or 38 μm of aluminum steel as bonding line.To the power section,
Such as IGBT pipes and FRD pipes, bonding uses 200 μm~400 μm of aluminum steel.
In view of nation line board shakes the influence to bonding line, the mode of nation of elder generation thick line nation's filament again can be used；For anti-
Electrostatic considers, the mode of elder generation's nation filament nation's thick line again can be used.Vibration amplitude with specific reference to board and board nation head it is anti-quiet
Depending on electric effect.
5th process：It is that papery is sealed by sealing resin using mold in the 5th process of the embodiment of the present invention with reference to Fig. 7
The sectional view of radiator.
The 5th process of the present invention is the process for sealing papery radiator 306 by sealing resin 302.
The papery radiator 306 for having configured pin 301 is transported to model 44 and 45.By the spy for making pin 301
Fixed part is contacted with fixing device 46, carries out the positioning of the papery radiator 306.
When molding, papery radiator 306 is placed in the die cavity being formed in inside mold 50, is then injected by cast gate 53 close
Seal resin 302.The method being sealed can be used transmits mould molding or using the note of thermosetting resin using thermosetting resin
Enter mould molding.Moreover, the gas of corresponding 302 mold cavity of sealing resin injected from cast gate 53 is discharged into outside by exhaust outlet 54
Portion.Selection for 53 position of the cast gate, should select not exclusively with pin 301 one side, i.e. the top of Fig. 6 (A), for
The selection of exhaust outlet 54 should select one side with pin 301 completely, i.e. Fig. 6's (A) is following.
Here, the back side of the papery radiator 306 is tightly attached in lower die 45, but still have a small amount of sealing resin
302 enter between the back side and lower die 45 of the papery radiator 306, therefore, after demoulding, need carry out laser-induced thermal etching or
Person grinds, and a small amount of sealing resin 302 for remaining in 306 back side of papery radiator is removed, the papery radiator 306 is made
The back side expose from the sealing resin 302, it is and smooth, and the back side above section of the papery radiator 306 is sealed
Resin 302 seals.
6th process：Be in the 6th process of the embodiment of the present invention with reference to Fig. 8 (A) and Fig. 8 (B), Fig. 8 (A), pin rib cutting at
The schematic diagram of type, Fig. 8 (B) are the schematic diagrames of installation heat dissipation gauffer in the 6th process of the embodiment of the present invention.
The 6th process of the present invention is to carry out 301 Trim Molding of pin, and assembly heat dissipation gauffer simultaneously carries out functions of modules
The process of test, intelligent power module are completed through thus process as product.
Transmitting mould mold assembly step in preceding process makes the other parts in addition to the pin 301 all by the resin 302
Sealing.This process is according to the length and shape needs used, for example, cutting off external pin 301 in the position of dotted line, such as Fig. 8
(A) shown in, it can also be bent into definite shape sometimes, convenient for follow-up assembly.
The heat dissipation gauffer 320 is adhered to the papery and dissipated by the high temperature resistant cement using tolerable temperature at 150 DEG C or more
The back side of hot device 306, here, in order to improve thermal diffusivity, the papery radiator can be completely covered in the heat dissipation gauffer 320
306 back side is from the part that the thermosetting resin frame 13 exposes, and in order to reduce cost, the heat dissipation gauffer 320 can be only complete
All standing top has the back side of the papery radiator 306 of the power component 19.
Then module is put into test equipment, carries out conventional electric parameters testing, generally comprise insulation pressure resistance, static work(
The test events such as consumption, delay time, test passes person are finished product.
Using above-mentioned operation, intelligent power module 10 shown in Fig. 2 is completed.
Control circuit, intelligent power module and its manufacturing method of a kind of intelligent power module proposed by the present invention, intelligence
The low-pressure area driving circuit of power module realizes that higher-pressure region driving circuit is integrated by high drive by low-voltage driving integrated pipe
Pipe realizes that low-voltage driving integrated pipe can realize that high drive is integrated by low pressure process such as the BIPOLAR or COMS of low cost
Guan Ze realizes that the former process costs are only the 1/3 of the latter, significantly reduce intelligent power by high-pressure process such as BCD or SOI
The manufacturing cost of module；
Also, the intelligent power module of the present invention is matched by separate high drive integrated pipe or low-voltage driving integrated pipe
It sets on corresponding IGBT pipes, can accomplish one from high drive integrated pipe or low-voltage driving integrated pipe to the cabling of IGBT tube grids
It causes, to can effectively ensure that the consistency of six pieces of IGBT pipe dynamic characteristics, and one piece of IGBT for Active PFC
Rising edge and failing edge can be accomplished very suddenly, and can largely save the area of wiring, to make intelligent power module
The area of circuit board substantially reduce, so that the cost of intelligent power module is further decreased.
In addition, since the power module architectures of the present invention may be used smaller inductance and capacitance, and distributed inductance and electricity
The reduction of appearance makes the dynamic power consumption of the intelligent power module of the present invention be greatly reduced, and the present invention is replaced using papery radiator
Circuit board replaces aluminium radiator using heat dissipation gauffer, intelligent power module is made inherently to have good heat dissipation effect, external
No longer need to connect radiator, and radiator is papery, significantly reduce the weight of intelligent power module, material cost, transport at
This also declines to a great extent therewith.
The preferred embodiment of the present invention is above are only, is not intended to limit the scope of the invention, it is every to utilize this hair
Equivalent structure made by bright specification and accompanying drawing content or flow transformation are applied directly or indirectly in other relevant technology necks
Domain is included within the scope of the present invention.
Claims (5)
1. a kind of intelligent power module, which is characterized in that including wiring, metal wire and be set on the wiring
Power component, the wiring, the metal wire and the power component constitute the control circuit of the intelligent power module；
The control circuit includes three upper bridge arm power devices and three lower bridge arm power devices, and respectively with described three
U phase high drives integrated pipe that upper bridge arm power device is correspondingly connected with, V phase high drives integrated pipe, W phase high drives are integrated
Pipe, and the U phase low-voltage drivings integrated pipe that is correspondingly connected with respectively with three lower bridge arm power devices, V phase low-voltage drivings are integrated
Pipe, W phase low-voltage driving integrated pipes；The control circuit further includes circuit of power factor correction, the circuit of power factor correction
It is connected respectively with U, V, W phase high drive integrated pipe and U, V, W three-phase low-voltage driving integrated pipe, the power factor
Correcting circuit includes low-voltage driving integrated pipe and the power device that is attached thereto, and the low-voltage driving integrated pipe configuration is in the work(
On rate device, the low-voltage driving integrated pipe uses the BCD techniques of 20V；
The intelligent power module further includes the papery radiator as carrier, and the one side of the radiator is covered with as front
The one side far from the radiator, the another side of the radiator is arranged on the insulating layer in insulating layer, the wiring
As the back side, it is provided with the gauffer for heat dissipation, the distance at each edge of the gauffer away from the radiator is at least 1.5mm；
The radiator and the gauffer are wet type carbon composite functional paper, the thickness of the radiator be 1.5mm~
2.5mm；The thickness of the radiator is more than the thickness of the gauffer, and the radiator is viscous by high temperature glue with the gauffer
It connects；
Potting resin material and aluminium oxide, the wiring are formed in the specific of the papery radiator inside the insulating layer
Position；
The insulating layer and the wiring formation the step of include：
The wet type carbon composite that predetermined size is chosen according to the circuit layout of setting forms papery radiator；
In the front of radiator, using insulating materials and copper material, by way of hot pressing, insulating materials is made to be formed in the heat dissipation
The surface of device and as the insulating layer, makes copper material be formed in the surface of the insulating layer as copper foil layer；
The specific position of the copper foil layer is eroded, remainder forms wiring.
2. intelligent power module according to claim 1, which is characterized in that further include configuring on the wiring
Non-power element and configuration at the power module edge, connect and extended outwardly as input and output with the wiring
Pin, the wiring, the power component and non-power element, the metal wire and the pin and the circuit
The coupling part of wiring is by resin-encapsulated.
3. a kind of manufacturing method of the intelligent power module described in claim 2, which is characterized in that include the following steps：
Papery radiator is formed, in the front covering insulating layer of the radiator, wiring is formed in surface of insulating layer；
In surface-mounted corresponding IGBT pipes, FRD pipes and the ready-made pin of the wiring；
Corresponding high drive integrated pipe, low-voltage driving integrated pipe are installed in the emitter-base bandgap grading position of the IGBT pipes；
The IGBT is managed by metal wire, FRD pipes, the high drive integrated pipe, the low-voltage driving integrated pipe with
And the wiring connects to form corresponding control circuit；
The front of the radiator is sealed by sealing resin；
Ready-made gauffer is covered at the back side of the radiator.
4. according to the method described in claim 3, it is characterized in that, the surface-mounted IGBT pipes in the wiring,
FRD is managed and is further included before the step of ready-made pin：
The independent pin with coating is made；It specifically includes：
Copper base material is chosen to make pin in a row to Copper base material by way of punching press or etching, between pin connect by reinforcing rib
It connects；
Nickel layer and nickeltin layer are sequentially formed in the pin surface, obtains the pin with coating.
5. method according to claim 3 or 4, which is characterized in that described to be made in advance in the covering of the back side of the radiator
At gauffer the step of include：
Gauffer is formed using wet type carbon composite, the back side of the radiator is adhered to by high temperature resistant cement.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510130426.3A CN104767417B (en) | 2015-03-23 | 2015-03-23 | Control circuit, intelligent power module and its manufacturing method of intelligent power module |
| US15/559,834 US10615155B2 (en) | 2015-03-23 | 2016-03-23 | Intelligent power module and manufacturing method thereof |
| JP2018500841A JP6500162B2 (en) | 2015-03-23 | 2016-03-23 | Intelligent power module and manufacturing method thereof |
| PCT/CN2016/077143 WO2016150391A1 (en) | 2015-03-23 | 2016-03-23 | Smart power module and manufacturing method therefor |
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| CN201510130426.3A CN104767417B (en) | 2015-03-23 | 2015-03-23 | Control circuit, intelligent power module and its manufacturing method of intelligent power module |
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| CN104767417B true CN104767417B (en) | 2018-10-19 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6500162B2 (en) * | 2015-03-23 | 2019-04-10 | 広東美的制冷設備有限公司Ｇｄ Ｍｉｄｅａ Ａｉｒ−Ｃｏｎｄｉｔｉｏｎｉｎｇ Ｅｑｕｉｐｍｅｎｔ Ｃｏ．，Ｌｔｄ． | Intelligent power module and manufacturing method thereof |
| WO2017092448A1 (en) * | 2015-11-30 | 2017-06-08 | 广东美的制冷设备有限公司 | Intelligent power module and air conditioner |
| WO2017148121A1 (en) * | 2016-03-04 | 2017-09-08 | 广东美的制冷设备有限公司 | Intelligent power module and air conditioner |
| CN106409800A (en) * | 2016-11-15 | 2017-02-15 | 广东美的制冷设备有限公司 | Intelligent power module and manufacturing method thereof |
| CN109411462A (en) * | 2018-10-31 | 2019-03-01 | 广东美的制冷设备有限公司 | Highly integrated power module and electric appliance |
| CN110594985B (en) * | 2018-06-13 | 2023-08-22 | 广东美的制冷设备有限公司 | Air conditioner and integrated air conditioner controller |
| CN110594984A (en) * | 2018-06-13 | 2019-12-20 | 重庆美的制冷设备有限公司 | Air conditioner and integrated air conditioner controller |
| CN110594989A (en) * | 2018-06-13 | 2019-12-20 | 广东美的制冷设备有限公司 | Air conditioner and integrated air conditioner controller |
| CN110594986B (en) * | 2018-06-13 | 2023-09-12 | 广东美的制冷设备有限公司 | Air conditioner and integrated air conditioner controller |
| CN110594987A (en) * | 2018-06-13 | 2019-12-20 | 广东美的制冷设备有限公司 | Air conditioner and integrated air conditioner controller |
| CN110601551A (en) * | 2018-06-13 | 2019-12-20 | 重庆美的制冷设备有限公司 | High-integration intelligent power module and air conditioner |
| CN109546871B (en) * | 2018-12-29 | 2020-12-22 | 广东美的制冷设备有限公司 | Power integration module for air conditioner and method of manufacturing the same |
| CN109713912B (en) * | 2018-12-29 | 2020-10-13 | 广东美的制冷设备有限公司 | Power integration module for air conditioner and method of manufacturing the same |
| CN109728736A (en) * | 2018-12-29 | 2019-05-07 | 广东美的制冷设备有限公司 | Electric appliance, power device and forming method thereof |
| CN109560693A (en) * | 2018-12-29 | 2019-04-02 | 广东美的制冷设备有限公司 | Electric appliance, power device and forming method thereof |
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