CN110601551A - High-integration intelligent power module and air conditioner - Google Patents

High-integration intelligent power module and air conditioner Download PDF

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Publication number
CN110601551A
CN110601551A CN201810610902.5A CN201810610902A CN110601551A CN 110601551 A CN110601551 A CN 110601551A CN 201810610902 A CN201810610902 A CN 201810610902A CN 110601551 A CN110601551 A CN 110601551A
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CN
China
Prior art keywords
heat dissipation
module
ipm module
fan
compressor
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Pending
Application number
CN201810610902.5A
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Chinese (zh)
Inventor
甘弟
冯宇翔
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Midea Group Co Ltd
Chongqing Midea Refrigeration Equipment Co Ltd
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Midea Group Co Ltd
Chongqing Midea Refrigeration Equipment Co Ltd
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Priority to CN201810610902.5A priority Critical patent/CN110601551A/en
Publication of CN110601551A publication Critical patent/CN110601551A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention discloses a high-integration intelligent power module and an air conditioner, wherein the high-integration intelligent power module comprises: a first heat dissipation substrate; the circuit wiring layer is arranged on one side surface of the heat dissipation substrate and is provided with a mounting position for mounting an electronic element of the highly integrated intelligent power module; the system comprises a rectifier bridge, a compressor IPM module and a fan IPM module; the rectifier bridge, the compressor IPM module and the fan IPM module are arranged on the installation positions of the corresponding circuit wiring layers; the rectifier bridge, the compressor IPM module and the fan IPM module are electrically connected in sequence through the circuit wiring layer. The invention solves the problems that when the electric control board is realized by adopting a plurality of discrete components, the components are more, so that the air conditioner is complex to assemble, the power consumption of the air conditioner is higher, the heating is serious, the heat efficiency of the air conditioner is caused, and the realization of energy conservation and emission reduction of the air conditioner is not facilitated.

Description

High-integration intelligent power module and air conditioner
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a high-integration intelligent power module and an air conditioner.
Background
With the development of scientific and technological progress and social productivity, the problems of resource excessive consumption, environmental pollution, ecological destruction, climate warming and the like are increasingly prominent, and the green development, energy conservation and emission reduction become the transformation development direction of various enterprises and industrial fields. Therefore, how to reduce energy consumption of refrigeration equipment with large energy consumption, such as air conditioners, refrigerators and the like, and energy conservation becomes an effort direction of researchers.
Disclosure of Invention
The invention mainly aims to provide a high-integration intelligent power module and an air conditioner, and aims to improve the integration level of the high-integration intelligent power module, realize the integrated drive control of a fan and a compressor, reduce the volume of an electric control board, facilitate the installation problem and realize energy conservation and emission reduction.
To achieve the above object, the present invention provides a highly integrated smart power module, which includes:
a first heat dissipation substrate;
the circuit wiring layer is arranged on one side surface of the first heat dissipation substrate and is provided with a mounting position for mounting an electronic element of the high-integration intelligent power module;
the system comprises a rectifier bridge, a compressor IPM module and a fan IPM module; the rectifier bridge, the compressor IPM module and the fan IPM module are arranged on the corresponding installation positions of the circuit wiring layer; wherein,
the rectifier bridge, the compressor IPM module and the fan IPM module are electrically connected in sequence through the circuit wiring layer.
Optionally, the compressor IPM module includes a compressor power driving chip and a plurality of first power switching tubes, where a plurality of output ends of the compressor power driving chip are connected to controlled ends of the plurality of first power switching tubes in a one-to-one correspondence manner; wherein,
the first power switch tube is a SiC type IGBT, a SiC type MOSFET or a GaN type HEMT.
Optionally, the compressor IPM module further includes a plurality of diodes, and the number and the positions of the plurality of diodes are arranged corresponding to the plurality of SiC type IGBTs; wherein,
the diode is a fast recovery diode or a Schottky diode.
Optionally, the fan IPM module includes a fan power driving chip and a plurality of second power switching tubes, wherein a plurality of output ends of the fan power driving chip are connected to controlled ends of the plurality of second power switching tubes in a one-to-one correspondence manner; wherein,
and the second power switch tube is a reverse conducting IGBT.
Optionally, the highly integrated smart power module further includes a highly thermally conductive package casing for packaging the first heat dissipation substrate, the rectifier bridge, the compressor IPM module, and the fan IPM module.
Optionally, the highly integrated intelligent power module further includes a second heat dissipation substrate, and the second heat dissipation substrate is disposed on one side of the first heat dissipation substrate, where the rectifier bridge, the compressor IPM module, and the fan IPM module are disposed.
Optionally, the first heat dissipation plate is located inside the high thermal conductivity package casing or at least partially exposed outside the high thermal conductivity package casing,
and/or the presence of a gas in the gas,
the second heat dissipation substrate is located inside the high thermal conductivity package casing or at least partially exposed outside the high thermal conductivity package casing.
Optionally, a plurality of heat dissipation portions are arranged on one side, away from the first heat dissipation substrate, of the second heat dissipation substrate, optionally, the high-integration intelligent power module further comprises an insulating layer, and the insulating layer is attached to one side, facing the second heat dissipation substrate, of the first heat dissipation substrate; wherein,
the thickness of insulating layer is 70 ~ 150 um.
The invention also provides an air conditioner, which comprises the high-integration intelligent power module; the highly integrated smart power module includes: a first heat dissipation substrate; a circuit wiring layer disposed on one side surface of the first heat dissipation substrate 200, the circuit wiring layer having a mounting position for mounting an electronic component of the highly integrated smart power module; the system comprises a rectifier bridge, a compressor IPM module and a fan IPM module; the rectifier bridge, the compressor IPM module and the fan IPM module are arranged on the corresponding installation positions of the circuit wiring layer; the rectifier bridge, the compressor IPM module and the fan IPM module are electrically connected in sequence through the circuit wiring layer.
According to the high-integration intelligent power module, the first heat dissipation substrate is arranged, the circuit wiring layer is arranged on the first heat dissipation substrate, so that the rectifier bridge, the compressor IPM module and the fan IPM module are integrated on the first heat dissipation substrate, the connected direct current voltage is corrected through the rectifier bridge and then is respectively output to the compressor IPM module and the fan IPM module, the compressor IPM module drives the compressor to work, and the fan IPM module drives the fan to work. According to the invention, the rectifier bridge, the compressor IPM module and the fan IPM module are integrated on the heat dissipation substrate, and the arrangement is favorable for the heat dissipation substrate to quickly dissipate heat of heat generated by the rectifier bridge, the compressor IPM module, the fan IPM module and other components and circuit modules during working so as to improve the heat dissipation rate of each component. According to the invention, all components in the high-integration intelligent power module are not required to be connected by wires, so that the distance between the rectifier bridge and each IPM module can be reduced, and the size of the high-integration intelligent power module is further reduced. And reduce the wire jumper overlength and the electromagnetic interference that too much arouses, in addition with above each functional module integration on a heat dissipation base plate, can improve the integrated level of integrated intelligent power module, realize the integrated drive control of a plurality of loads, for example fan and compressor to reduce the volume of automatically controlled board, easy to assemble. Meanwhile, the components of the electric control board can be reduced, the PCB layout of the electric control board is simplified, and the production cost of the air conditioner is effectively reduced. The invention solves the problems that when the electric control board is realized by adopting a plurality of discrete components, the components are more, so that the air conditioner is complex to assemble, the power consumption of the air conditioner is higher, the heating is serious, the heat efficiency of the air conditioner is caused, and the realization of energy conservation and emission reduction of the air conditioner is not facilitated. The high-integration intelligent power module has high integration level, small volume and strong anti-interference capability, is suitable for a frequency converter of a driving motor and various inverter power supplies to realize the functions of frequency conversion speed regulation, metallurgical machinery, electric traction, servo drive and the like, and is particularly suitable for driving the motors of compressors and fans of air conditioners, refrigerators and the like to work.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a functional block diagram of an embodiment of a highly integrated smart power module according to the present invention;
FIG. 2 is a schematic circuit diagram of an embodiment of the highly integrated smart power module of FIG. 1;
fig. 3 is a schematic structural diagram of an embodiment of the highly integrated smart power module according to the invention.
The reference numbers illustrate:
reference numerals Name (R) Reference numerals Name (R)
100 High heat conduction packaging shell 10 Rectifier bridge
200 First heat dissipation substrate 30 Compressor IPM module
300 Second heat dissipation substrate 31 Fan IPM module
110 Circuit wiring layer 311 Compressor power driving chip
120 Insulating layer 32 Fan power driving chip
130 Metal binding wire 310 Heat dissipation part
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides a high-integration intelligent power module.
In many electrical appliances such as air conditioners, washing machines, refrigerators, and the like, motors are provided to drive other loads to operate. For example, a conventional air conditioner generally includes an indoor unit and an outdoor unit, wherein the outdoor unit and the indoor unit are both provided with a motor and an electric control board for driving the motor to operate. Taking an electric control board of the outdoor unit as an example, most of the electric control boards of the outdoor unit are provided with a compressor IPM module for driving a compressor, a fan IPM module for driving a fan, a power module and other functional modules. These functional modules adopt the circuit module of discrete or partial integration to realize mostly, and the scattered each part of arranging at automatically controlled PCB board, but because automatically controlled board self structure, strong and weak electric isolation, prevent signal interference, heat dissipation etc. requirement, require the interval between each functional module to guarantee in safe distance for the automatically controlled board of off-premises station's volume is great, is unfavorable for the installation. Or disperse these on polylith circuit board, adopt the mode of wire jumper again to realize between main control module and other functional modules to and mutual electrical connection between each functional module, but the dispersion sets up each functional module and can lead to the wire jumper more and long, leads to electrical apparatus EMC performance to descend. And the electric control board of these two kinds of structures all can appear the device of electric control board more, lead to the assembly of off-premises station complicated, still can increase the manufacturing cost of air conditioner simultaneously, and the maintenance rate also can increase, is unfavorable for the stable use of air conditioner. More importantly, when the electric control board is realized by adopting a plurality of components, the energy consumption of the components is large, the heating is serious, the heat efficiency of the air conditioner is low, and the realization of energy conservation and emission reduction of the air conditioner is not facilitated.
In order to solve the above problem, referring to fig. 1 to 3, in an embodiment of the present invention, the highly integrated smart power module includes:
a first heat dissipation substrate 200;
a circuit wiring layer 110 disposed on one side surface of the first heat dissipation substrate 200, the circuit wiring layer 110 having a mounting position for mounting an electronic component of the highly integrated smart power module;
a rectifier bridge 10, a compressor IPM module 20, and a fan IPM module 30; the rectifier bridge 10, the compressor IPM module 20, and the fan IPM module 30 are disposed at the corresponding mounting positions of the circuit wiring layer 110; wherein,
the rectifier bridge 10, the compressor IPM module 20, and the fan IPM module 30 are electrically connected in sequence through the circuit wiring layer 110.
In this embodiment, the rectifier bridge 10 is configured to convert an input ac voltage into a dc voltage and output the dc voltage to the compressor IPM module 20 and the fan IPM module 30, so as to control the compressor IPM module 20 and the fan IPM module 30 to drive corresponding loads to work. In this embodiment, the rectifier bridge 10 may further be externally connected to a PFC circuit to perform power factor correction on the output dc voltage. The rectifier bridge 10 may be implemented by combining four chip diodes, and the four chip diodes are respectively labeled as D11, D12, D13, and D14, and the rectifier bridge 10 converts the input ac power into dc power and outputs the dc power.
In this embodiment, the first heat dissipation substrate 200 may be implemented by a circuit substrate made of a material such as a PCB, a lead frame, a cardboard, a half-glass fiber board, a glass fiber board, or a substrate made of a material with high heat conduction and dissipation performance such as aluminum and aluminum alloy, copper and copper alloy, aluminum oxide (Al2O3) or aluminum nitride (AlN) ceramic. The shape of the first heat dissipation substrate 200 may be determined according to specific positions and sizes of the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30 integrated on the heat dissipation substrate in the highly integrated intelligent power module, and may be a square shape, but is not limited to the square shape. In a specific implementation, the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30 may be disposed on a heat dissipation substrate to be integrally disposed into a highly integrated intelligent power module, or may be separately disposed on two heat dissipation substrates and then packaged into a whole by a packaging material.
In some embodiments, the highly integrated smart power module may further include an insulating layer 120 disposed on the first heat dissipation substrate 200 according to a material of the first heat dissipation substrate 200, for example, when the first heat dissipation substrate 200 is implemented by using a material with a conductive property, such as an aluminum material or a copper material, the insulating layer 120 may be made of a material such as a thermoplastic adhesive or a thermosetting adhesive, so as to implement a fixed connection and insulation between the heat dissipation substrate and the circuit wiring layer 110.
In this embodiment, the first heat dissipation substrate 200 is further provided with a circuit wiring layer 110, and the circuit wiring layer 110 forms corresponding circuits and corresponding mounting positions, i.e. pads, for mounting electronic components in the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30 on the first heat dissipation substrate 200 according to the circuit design of the highly integrated intelligent power module. Specifically, after the insulating layer 120 is disposed on the first heat dissipation substrate 200, a copper foil is laid on the insulating layer 120 and etched according to a predetermined circuit design, thereby forming the circuit wiring layer 110. After the electronic components of the circuit modules such as the rectifier bridge 10, the compressor IPM module 20, and the fan IPM module 30 are integrated in the circuit wiring layer 110 on the heat dissipation substrate, the electrical connection between the circuit modules can be realized by the metal binding wires 130.
In this embodiment, a plurality of power switching tubes are integrated in both the compressor IPM module 20 and the fan IPM module 30, and the plurality of power switching tubes form a driving inverter circuit, for example, six power switching tubes form a three-phase inverter bridge circuit, or four power switching tubes form a two-phase inverter bridge circuit. Each power switch tube can be realized by adopting an MOS tube or an IGBT. The plurality of power switch tubes are connected with the power inverter bridge circuit and used for driving loads such as a fan and a compressor to work, and after each power switch tube is arranged on the corresponding mounting position of the circuit wiring layer 110, the power switch tubes can be electrically connected with the circuit wiring layer 110 through conductive materials such as soldering tin and the like, and a current loop is formed. Each power switch tube can also be attached to the corresponding mounting position of the circuit wiring layer 110 through a flip-chip process, and a current loop is formed between each circuit element and each circuit wiring layer 110 and the metal binding wires 130.
It is understood that the electronic components in the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30 may be implemented by using a bare wafer, or may be implemented by using a packaged chip component.
The highly integrated intelligent power module of the present invention integrates the rectifier bridge 10, the compressor IPM module 20, and the fan IPM module 30 on the first heat dissipation substrate 200 by providing the first heat dissipation substrate 200 and the circuit wiring layer 110 on the first heat dissipation substrate 200, and corrects the accessed dc voltage through the rectifier bridge 10 and then outputs the corrected dc voltage to the compressor IPM module 20 and the fan IPM module 30, respectively, so that the compressor IPM module 20 drives the compressor to operate, and the fan IPM module 30 drives the fan to operate. According to the invention, the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30 are integrated on the heat dissipation substrate, so that the heat dissipation substrate which generates heat when the components and circuit modules such as the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30 work can dissipate heat quickly, and the heat dissipation rate of each component is improved. According to the invention, all components in the high-integration intelligent power module are not required to be connected by conducting wires, so that the distance between the rectifier bridge 10 and each IPM module can be reduced, and the size of the high-integration intelligent power module is further reduced. And reduce the wire jumper overlength and the electromagnetic interference that too much arouses, in addition with above each functional module integration on a heat dissipation base plate, can improve the integrated level of integrated intelligent power module, realize the integrated drive control of a plurality of loads, for example fan and compressor to reduce the volume of automatically controlled board, easy to assemble. Meanwhile, the components of the electric control board can be reduced, the PCB layout of the electric control board is simplified, and the production cost of the air conditioner is effectively reduced. The invention solves the problems that when the electric control board is realized by adopting a plurality of discrete components, the components are more, so that the air conditioner is complex to assemble, the power consumption of the air conditioner is higher, the heating is serious, the heat efficiency of the air conditioner is caused, and the realization of energy conservation and emission reduction of the air conditioner is not facilitated. The high-integration intelligent power module has high integration level, small volume and strong anti-interference capability, is suitable for a frequency converter of a driving motor and various inverter power supplies to realize the functions of frequency conversion speed regulation, metallurgical machinery, electric traction, servo drive and the like, and is particularly suitable for driving the motors of compressors and fans of air conditioners, refrigerators and the like to work.
Referring to fig. 1 to 3, in an alternative embodiment, the compressor IPM module 20 includes a compressor power driving chip 21 and a plurality of first power switching tubes (Q211, Q212, Q213, Q214, Q215, Q216), wherein a plurality of output terminals of the compressor power driving chip 21 are connected to controlled terminals of the plurality of first power switching tubes in a one-to-one correspondence; wherein,
the first power switch tube is a SiC type IGBT, a SiC type MOSFET or a GaN type HEMT.
In this embodiment, the compressor power driving chip 21 is configured to receive a control signal input by an external MCU, and convert the control signal into a corresponding driving signal to drive the corresponding power switch in the compressor IPM module 20 to turn on/off, so as to drive the compressor to work. In this embodiment, the number of the first power switching tubes may be four or six, and in this embodiment, six of the first power switching tubes may be selected as six, and the six first power switching tubes are labeled as Q211, Q212, Q213, Q214, Q215, and Q216. The six first power switch tubes form a three-phase inverter bridge circuit, and the three-phase inverter bridge circuit comprises three-phase upper bridge arm power switch tubes and three-phase lower bridge arm power switch tubes. The three-phase upper bridge arm power switching tube and the three-phase lower bridge arm power switching tube can be completely or partially realized by adopting MOS tubes, can be completely or partially realized by adopting IGBT, and can be completely or partially realized by adopting HEMT. So set up, be favorable to according to the fast characteristics of device switching speed that SiC, GaN material made to reduce the switching loss of high integrated intelligent power module, and then be favorable to practicing thrift the electric energy, reduce the module and generate heat. Further, the IGBT and/or the MOSFET may be implemented by using a power transistor made of SiC material. The HEMT can be realized by adopting a power tube made of GaN material. In this embodiment, six power switching tubes of the three-phase upper bridge arm power switching tube and the three-phase lower bridge arm power switching tube may be implemented by using IGBTs.
With reference to fig. 1 to 3, further, based on the above embodiment, the compressor IPM module 20 further includes a plurality of first diodes (D21, D22, D23, D24, D25, D26), and the number and the positions of the plurality of first diodes are arranged corresponding to the plurality of SiC type IGBTs; wherein,
the first diode is a fast recovery diode or a Schottky diode.
In this embodiment, the number and the positions of the fast recovery diodes correspond to those of the first power switching tubes, in this embodiment, the number of the fast recovery diodes may be six, and the six fast recovery diodes are respectively marked as D21, D22, D23, D24, D25, and D26. In this embodiment, the fast recovery diode and the schottky diode are high-power anti-parallel diodes, and are used to realize fast turn-off of the first power switch tube. Wherein, when setting up to SiC MOSFET or SiIGBT based on the power switch tube, perhaps GaN HEMT device, reduce the switching loss of high integrated intelligent power module to lower, and then be favorable to practicing thrift the electric energy, reduce the module under the circumstances that generates heat, the fast recovery diode can select the fast recovery diode or the Schottky diode that adopt the Si material to make to realize, can guarantee that the self consumption of high integrated intelligent power module is lower simultaneously, reduces the manufacturing cost of high integrated intelligent power module.
Referring to fig. 1 to 3, in an alternative embodiment, the fan IPM module 30 includes a fan power driving chip 31 and a plurality of second power switching tubes (Q311, Q312, Q313, Q314, Q315, Q316), where a plurality of output terminals of the fan power driving chip 31 are connected to controlled terminals of the plurality of second power switching tubes in a one-to-one correspondence; wherein,
and the second power switch tube is a reverse conducting IGBT.
In this embodiment, the fan power driving chip 31 is configured to receive a control signal input by an external MCU, and convert the control signal into a corresponding driving signal to drive the power switch tube in the fan IPM module 30 to turn on/off, so as to drive the fan to work. In this embodiment, the number of the second power switching tubes may be four or six, and in this embodiment, six second power switching tubes are labeled as Q311, Q312, Q313, Q314, Q315, and Q316. And the six second power switching tubes form a three-phase inverter bridge circuit, and the three-phase inverter bridge circuit comprises three-phase upper bridge arm power switching tubes and three-phase lower bridge arm power switching tubes. It can be understood that the power for driving the fan is generally lower than that of the compressor, that is, the current for driving the fan is lower, and the heat generation is relatively lower, so that the three-phase upper arm power switching tube and the three-phase lower arm power switching tube in this embodiment may be implemented by all or part of the reverse conducting IGBTs. In the reverse conducting IGBT, a Fast Recovery Diode (FRD) which is packaged together with an IGBT power switch tube in an anti-parallel mode is integrated on the same chip, and therefore the size of an inverter bridge circuit is reduced. So set up, be favorable to improving power density, reduce high integrated intelligent power module's volume, manufacturing cost and encapsulation process, still be favorable to improving high integrated intelligent power module's reliability simultaneously.
Referring to fig. 1 to 3, in an alternative embodiment, the highly integrated smart power module further includes a highly heat conductive package casing 100 for packaging the first heat dissipation substrate 200, the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30.
In this embodiment, the high thermal conductivity and high thermal conductivity heat sealing package casing 100 may be made of epoxy resin 11, alumina, and high thermal conductivity filling material 13, wherein the high thermal conductivity filling material 13 may be boron nitride or aluminum nitride, and the insulation property of aluminum nitride and boron nitride is better, and the thermal conductivity is higher, and the heat resistance and the thermal conductivity are better, so that the aluminum nitride and the boron nitride have higher heat transfer capability. When the high-thermal-conductivity and high-thermal-conductivity packaging shell 100 is manufactured, materials such as epoxy resin 11, aluminum oxide, boron nitride or aluminum nitride and the like can be mixed, and then the mixed material of the high-thermal-conductivity and high-thermal-conductivity packaging shell 100 is heated; after cooling, the high thermal conductivity and high thermal conductivity packaging shell 100 material is crushed, and then the high thermal conductivity and high thermal conductivity packaging shell 100 material is rolled and formed by an ingot particle forming process to form the high thermal conductivity packaging shell 100, and then the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30 are packaged. Or the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30 are encapsulated by an injection molding process.
Referring to fig. 1 to 3, in an alternative embodiment, the highly integrated smart power module further includes a second heat dissipation substrate 300, where the second heat dissipation substrate 300 is disposed on a side of the first heat dissipation substrate 200 where the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30 are disposed.
In this embodiment, the second heat dissipating substrate 300 may be made of a material such as copper, aluminum, or ceramic, or a mixture of the above materials. The second heat dissipation substrate 300 is disposed near one side of the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30, so as to accelerate heat generated by the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30 to be conducted to the air, and increase the heat dissipation capability of the highly integrated intelligent power.
Referring to fig. 1 to 3, in an alternative embodiment, the first heat dissipation substrate 200 is located inside the high thermal conductivity package casing 100 or at least partially exposed outside the high thermal conductivity package casing 100,
and/or the presence of a gas in the gas,
the second heat dissipation substrate 300 is located inside the high thermal conductivity package casing 100 or at least partially exposed outside the high thermal conductivity package casing 100.
In this embodiment, a part or all of one side of the first heat dissipation substrate 200, on which no circuit element such as the rectifier bridge 10, the compressor IPM module 20, or the fan IPM module 30 is disposed, may be exposed outside the high thermal conductivity package casing 100, or may be packaged in the high thermal conductivity package casing 100. When the first heat dissipation substrate 200 is located inside the high thermal conductivity encapsulation casing 100, heat generated by the rectifier bridge 10, the compressor IPM module 20, and the fan IPM module 30 is conducted to the first heat dissipation substrate 200 through the insulating layer 120, then conducted to the high thermal conductivity encapsulation casing 100 through the first heat dissipation substrate 200, and conducted to the air through the high thermal conductivity encapsulation casing 100, so as to accelerate the heat dissipation rate of the rectifier bridge 10, the compressor IPM module 20, and the fan IPM module 30. Or one side of the first heat dissipation substrate 200 is partially or completely exposed outside the high thermal conductivity package casing 100, so that the heat generated by the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30 is conducted to the first heat dissipation substrate 200 through the insulating layer 120, and then directly dissipated to the air through the first heat dissipation substrate 200, thereby further increasing the contact area between the heat and the air and improving the heat dissipation rate.
In this embodiment, the second heat dissipation substrate 300 is located inside the high thermal conductivity package casing 100 or at least partially exposed outside the high thermal conductivity package casing 100. In this embodiment, the side of the second heat dissipation substrate 300 away from the first heat dissipation substrate 200 is exposed outside the high thermal conductivity encapsulation casing 100, so that the heat of the rectifier bridge 10, the compressor IPM module 20 and the fan IPM module 30 can be directly dissipated to the air through the second heat dissipation substrate 300 after being conducted to the second heat dissipation substrate 300 through the high thermal conductivity encapsulation casing 100, so as to increase the contact area between the heat and the air and improve the heat dissipation rate.
Referring to fig. 1 to 3, in an alternative embodiment, a plurality of heat dissipation portions 310 are disposed on a side of the second heat dissipation substrate 300 away from the first heat dissipation substrate 200.
In this embodiment, the plurality of heat dissipation portions 310 are disposed on the second heat dissipation substrate 300 to increase a contact area between the second heat dissipation substrate 300 and air, that is, when the second heat dissipation substrate 300 works, the contact area between heat on the second heat dissipation substrate 300 and air is increased to accelerate a heat dissipation rate of heat generated by the rectifier bridge 10, the compressor IPM module 20, and the fan IPM module 30 on the second heat dissipation substrate 300. Meanwhile, the material of the second heat dissipation substrate 300 can be reduced, and the production cost of the second heat dissipation substrate 300 can be reduced.
Referring to fig. 1 to 3, in the above embodiment, the cross-sectional area of the heat dissipation portion 310 decreases from the end close to the second heat dissipation substrate 300 to the end of the heat dissipation portion 310 away from the second heat dissipation substrate 300.
The heat dissipation part 310 is disposed in a tooth shape.
It can be understood that, in the above embodiment, the plurality of heat dissipation portions 310 are disposed in a toothed shape, so that a heat dissipation groove, that is, a wrinkle, is formed between two adjacent heat dissipation portions 310, and by disposing the heat dissipation groove, the contact area between heat and air is increased, the heat dissipation rate of the heat generated by the flow bridge, the PFC power switch module, and the plurality of IPM modules on the second heat dissipation substrate 300 can be further increased, and the heat dissipation efficiency of the highly integrated smart power module is improved.
With reference to figures 1 to 3 of the drawings,
in an optional embodiment, the highly integrated smart power module further includes an insulating layer 120, where the insulating layer 120 is attached to a side of the first heat dissipation substrate 200 facing the second heat dissipation substrate 300; wherein,
the thickness of the insulating layer 120 is 70-150 um.
In this embodiment, the insulating layer 120 may be implemented by using a high thermal conductive insulating layer 120 formed by mixing one or more materials of epoxy resin, aluminum oxide, and a high thermal conductive filling material. The insulating layer 120 is used to realize electrical isolation and electromagnetic shielding between the circuit wiring layer 110 and the first heat dissipation substrate 200, and reflect external electromagnetic interference, so as to prevent external electromagnetic radiation from interfering with normal operation of the PFC power switch module and the plurality of IPM modules, and reduce interference influence of electromagnetic radiation in the surrounding environment on electronic components in the highly integrated intelligent power module. The first heat dissipation substrate 200 and the insulating layer 120 may be formed by pressing ceramic and metal together, and the heat dissipation capability of the highly integrated smart power module is accelerated by the high insulation property and the high thermal conductivity of the ceramic. The thickness of insulating layer 120 can select to be 70 ~ 150um, so set up, is favorable to shortening the distance between power components such as heat dissipation base plate and power switch tube, rectifier bridge 10 to accelerate the radiating rate of power switch tube through the heat dissipation base plate.
The invention also provides an air conditioner which comprises the high-integration intelligent power module. The detailed structure of the highly integrated intelligent power module can refer to the above embodiments, and is not described herein again; it can be understood that, because the air conditioner of the present invention uses the above-mentioned high-integration intelligent power module, the embodiments of the air conditioner of the present invention include all technical solutions of all embodiments of the above-mentioned high-integration intelligent power module, and the achieved technical effects are also completely the same, and are not described herein again.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (10)

1. A highly integrated smart power module, comprising:
a first heat dissipation substrate;
the circuit wiring layer is arranged on one side surface of the first heat dissipation substrate and is provided with a mounting position for mounting an electronic element of the high-integration intelligent power module;
the system comprises a rectifier bridge, a compressor IPM module and a fan IPM module; the rectifier bridge, the compressor IPM module and the fan IPM module are arranged on the corresponding installation positions of the circuit wiring layer; wherein,
the rectifier bridge, the compressor IPM module and the fan IPM module are electrically connected in sequence through the circuit wiring layer.
2. The high-integration intelligent power module according to claim 1, wherein the compressor IPM module comprises a compressor power driving chip and a plurality of first power switch tubes, wherein a plurality of output terminals of the compressor power driving chip are connected to controlled terminals of the plurality of first power switch tubes in a one-to-one correspondence; wherein,
the first power switch tube is a SiC type IGBT, a SiC type MOSFET or a GaN type HEMT.
3. The high-integrated intelligent power module according to claim 2, wherein said compressor IPM module further comprises a plurality of diodes, the number and position of said plurality of diodes being arranged corresponding to a plurality of said SiC type IGBTs; wherein,
the diode is a fast recovery diode or a Schottky diode.
4. The high-integration intelligent power module according to claim 1, wherein the fan IPM module comprises a fan power driving chip and a plurality of second power switch tubes, wherein a plurality of output terminals of the fan power driving chip are connected to controlled terminals of the plurality of second power switch tubes in a one-to-one correspondence; wherein,
and the second power switch tube is a reverse conducting IGBT.
5. The highly integrated smart power module according to any of claims 1 to 4, further comprising a high thermal conductivity packaging case for packaging said first heat dissipation substrate, said rectifier bridge, said compressor IPM module and said fan IPM module.
6. The highly integrated smart power module of claim 5, further comprising a second heat dissipation substrate disposed on a side of the first heat dissipation substrate on which the rectifier bridge, the compressor IPM module, and the fan IPM module are disposed.
7. The highly integrated smart power module according to claim 6, wherein the first heat sink is inside or at least partially exposed outside the highly thermally conductive package housing,
and/or the presence of a gas in the gas,
the second heat dissipation substrate is located inside the high thermal conductivity package casing or at least partially exposed outside the high thermal conductivity package casing.
8. The highly integrated smart power module according to claim 6, wherein a side of the second heat dissipation substrate facing away from the first heat dissipation substrate is provided with a plurality of heat dissipation portions.
9. The highly-integrated intelligent power module according to claim 6, further comprising an insulating layer attached to a side of the first heat-dissipating substrate facing the second heat-dissipating substrate; wherein,
the thickness of insulating layer is 70 ~ 150 um.
10. An air conditioner characterized by comprising the highly integrated smart power module as recited in any one of claims 1 to 9.
CN201810610902.5A 2018-06-13 2018-06-13 High-integration intelligent power module and air conditioner Pending CN110601551A (en)

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Application Number Priority Date Filing Date Title
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CN110601551A true CN110601551A (en) 2019-12-20

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201448798U (en) * 2009-04-24 2010-05-05 东莞市星火机电设备工程有限公司 Heat radiation device for LED lamp
CN104767417A (en) * 2015-03-23 2015-07-08 广东美的制冷设备有限公司 Control circuit of intelligent power module, intelligent power module and manufacturing method thereof
CN204559377U (en) * 2015-03-23 2015-08-12 广东美的制冷设备有限公司 Integrated power module and air conditioner
CN107560128A (en) * 2017-09-21 2018-01-09 青岛海信日立空调系统有限公司 Air-conditioner control box and air conditioner
CN108091619A (en) * 2017-12-08 2018-05-29 广东美的制冷设备有限公司 Intelligent power module and its manufacturing method, air conditioner
CN208596669U (en) * 2018-06-13 2019-03-12 重庆美的制冷设备有限公司 Highly integrated intelligent power module and air conditioner

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201448798U (en) * 2009-04-24 2010-05-05 东莞市星火机电设备工程有限公司 Heat radiation device for LED lamp
CN104767417A (en) * 2015-03-23 2015-07-08 广东美的制冷设备有限公司 Control circuit of intelligent power module, intelligent power module and manufacturing method thereof
CN204559377U (en) * 2015-03-23 2015-08-12 广东美的制冷设备有限公司 Integrated power module and air conditioner
CN107560128A (en) * 2017-09-21 2018-01-09 青岛海信日立空调系统有限公司 Air-conditioner control box and air conditioner
CN108091619A (en) * 2017-12-08 2018-05-29 广东美的制冷设备有限公司 Intelligent power module and its manufacturing method, air conditioner
CN208596669U (en) * 2018-06-13 2019-03-12 重庆美的制冷设备有限公司 Highly integrated intelligent power module and air conditioner

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