CN211182190U - Insulated gate bipolar transistor, intelligent power module and air conditioner - Google Patents
Insulated gate bipolar transistor, intelligent power module and air conditioner Download PDFInfo
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- CN211182190U CN211182190U CN202020029370.9U CN202020029370U CN211182190U CN 211182190 U CN211182190 U CN 211182190U CN 202020029370 U CN202020029370 U CN 202020029370U CN 211182190 U CN211182190 U CN 211182190U
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Abstract
The utility model discloses an insulated gate bipolar transistor, intelligent power module and air conditioner, this insulated gate bipolar transistor includes: a ceramic heat sink; the mounting substrate is arranged on the ceramic radiating fin, and a mounting position is arranged on the mounting substrate; and the insulated gate bipolar transistor chip is arranged on the mounting position of the mounting substrate. The utility model provides an in the insulated gate bipolar transistor working process the heat dissipation untimely, perhaps the radiating effect is relatively poor, and lead to insulated gate bipolar transistor's operating temperature too high and break down, the problem of intelligent power module is burnt out even when serious.
Description
Technical Field
The utility model relates to an electronic circuit technical field, in particular to insulated gate bipolar transistor, intelligent power module and air conditioner.
Background
The insulated gate bipolar transistor is used as a power device, and generates more heat during working, so that the normal working of the insulated gate bipolar transistor can be influenced and even damaged if the heat cannot be dissipated in time.
SUMMERY OF THE UTILITY MODEL
The utility model mainly aims at providing an insulated gate bipolar transistor, intelligent power module and air conditioner aims at improving insulated gate bipolar transistor's radiating efficiency.
To achieve the above object, the present invention provides an insulated gate bipolar transistor, which includes:
a ceramic heat sink;
the mounting substrate is arranged on the ceramic radiating fin, and a mounting position is arranged on the mounting substrate;
and the insulated gate bipolar transistor chip is arranged on the mounting position of the mounting substrate.
Optionally, the insulated gate bipolar transistor further comprises:
and the heat conducting fin is arranged between the insulated gate bipolar transistor chip and the mounting substrate.
Optionally, the size of the heat conducting strip is in positive correlation with the magnitude of the current flowing through the igbt chip.
Optionally, the insulated gate bipolar transistor further comprises:
and the fast recovery diode is connected with the insulated gate bipolar transistor chip in an anti-parallel mode.
Optionally, the insulated gate bipolar transistor further comprises a heat conduction silica gel layer, and the heat conduction silica gel layer is arranged between the ceramic heat dissipation layer and the mounting substrate.
Optionally, the igbt further includes a package housing, and the ceramic heat sink, the mounting substrate, the ceramic heat sink, and the igbt chip are packaged in the package housing.
Optionally, the igbt further includes a plurality of pins, and one end of each of the plurality of pins is fixedly disposed on the mounting substrate and extends in a direction away from the mounting substrate.
Optionally, the package housing and the ceramic heat sink are further provided with mounting holes.
The utility model also provides an intelligent power module, which comprises an electric control board and a plurality of insulated gate bipolar transistors;
the insulated gate bipolar transistors are arranged on the electric control board.
The utility model discloses still provide an air conditioner, include as above insulated gate bipolar transistor, perhaps as above intelligent power module.
The utility model discloses a mounting substrate with the insulated gate bipolar transistor chip sets up on ceramic heat dissipation base plate for on the heat conduction that the insulated gate bipolar transistor during operation produced to ceramic heat dissipation base plate, rethread ceramic heat dissipation base plate is with heat conduction outside the insulated gate bipolar transistor chip, direct or indirect with heat radiation to the air in, thereby dispel the heat fast, with the radiating rate that improves insulated gate bipolar transistor. Because the heat conduction effect preferred of pottery heat dissipation base plate, the utility model provides an in the insulated gate bipolar transistor working process heat dissipation untimely, perhaps the radiating effect is relatively poor, and lead to insulated gate bipolar transistor's operating temperature too high and break down, the problem of intelligent power module is burnt out even when serious.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an embodiment of an insulated gate bipolar transistor according to the present invention;
FIG. 2 is a schematic diagram of an internal structure of the IGBT of FIG. 1;
FIG. 3 is a schematic cross-sectional view of an embodiment of a gate bipolar transistor of the present invention;
fig. 4 is a schematic cross-sectional view of another embodiment of a igbt according to the present invention.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 10 | Ceramic radiating |
60 | Heat-conducting |
| 20 | |
70 | |
| 30 | Insulated gate |
80 | |
| 40 | |
71 | |
| 50 | Fast recovery diode |
The objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
The utility model provides an insulated gate bipolar transistor.
An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate field effect Transistor), and has the advantages of both high input impedance of MOSFET and low on-state voltage drop of GTR. The IGBT packaging is to integrate and package the IGBT wafer and the FRD wafer together so as to improve the service life and the reliability of the IGBT module, and the IGBT module is smaller in volume, higher in efficiency and higher in reliability, and is a demand trend of the market for the IGBT module. The insulated gate bipolar transistor is used as a power device, and generates more heat during working, so that the normal working of the insulated gate bipolar transistor can be influenced and even damaged if the heat cannot be dissipated in time.
Referring to fig. 1 and 2, in an embodiment of the present invention, the igbt includes:
a ceramic heat sink 10;
a mounting substrate 20 disposed on the ceramic heat sink 10, the mounting substrate 20 having a mounting location;
and the insulated gate bipolar transistor chip 30 is arranged on the mounting position of the mounting substrate 20.
In the embodiment, the ceramic radiating fin 10 can be selected as an aluminum nitride ceramic substrate which can be used for realizing electrical isolation and electromagnetic shielding between an insulated gate bipolar transistor and an external environment and isolating external electromagnetic interference so as to avoid the interference of external electromagnetic radiation on normal operation of a power device and reduce the interference influence of electromagnetic radiation in the surrounding environment on an insulated gate bipolar transistor chip 30, the ceramic radiating fin 10 is small in heat capacity, does not store heat and directly radiate heat, and does not form a thermal step like a metal radiating fin to influence the heat radiation, the structure of a micro-hole of the ceramic radiating fin 10 greatly increases the heat radiation area in contact with air, greatly enhances the heat radiation effect under the same proportion condition, the heat radiation effect is better than that of super-copper and aluminum under a closed environment and has more obvious heat radiation advantage under the natural convection state, the ceramic radiating fin 10 is insulated, high-temperature resistant, oxidation resistant, acid and alkali resistant, cold resistant, low thermal expansion coefficient, ensures the stability of the ceramic radiating fin 10 under a high-temperature environment or other severe environments, the ceramic radiating fin 10 can resist large current, can withstand high-voltage, leak electric breakdown, does not generate noise, does not generate parasitic coupling with MOS power, the size of a filtering effect of a short ceramic radiating fin 10, the size of the ceramic radiating fin 10 is reduced by about 0.6mm, the size of a short filter is reduced, the size of a short ceramic radiating fin 10, the size of a filter is reduced by a short ceramic radiating fin 10, the size is reduced by a short filter, and a short filter is reduced by a short time, the size is reduced by a short filter, and a short filter is reduced by a short size is reduced by a short time, and a short time is reduced by a short time.
The mounting substrate 20 may be implemented by a circuit substrate made of a DBC board, a PCB board, a half glass fiber board, a glass fiber board, or any one of an aluminum substrate, an aluminum alloy substrate, a copper substrate, or a copper alloy substrate. The shape of the mounting substrate 20 may be determined according to the specific position, number and size of the driving power modules, and may be a square shape, but is not limited to a square shape. The mounting substrate 20 is realized by adopting a ceramic copper-clad plate, wherein the ceramic copper-clad plate comprises a circuit wiring layer and an insulating heat dissipation layer, and the circuit wiring layer is arranged on the insulating heat dissipation layer; the driving power module is arranged on the bonding pad formed by the circuit wiring layer.
In this embodiment, the igbt chip 30 includes a gate pad, a collector pad, and an emitter pad, the collector pad and the gate pad of the igbt chip 30 may be disposed on a side of the igbt chip 30 away from the mounting substrate 20, and the emitter pad of the igbt chip 30 may be attached to the mounting substrate. The collector pad and the gate pad of the igbt chip 30 are connected to the pin 80 by a metal binding wire. The metal binding wire can be a silver metal wire, a gold metal wire or a copper wire. It is understood that the igbt described above may be implemented by using a bare wafer, or may be implemented by using a packaged patch element.
The utility model discloses a mounting substrate 20 with insulated gate bipolar transistor chip 30 sets up on ceramic heat dissipation base plate for on the heat conduction that insulated gate bipolar transistor during operation produced to ceramic heat dissipation base plate, rethread ceramic heat dissipation base plate is with heat conduction to insulated gate bipolar transistor chip 30 outside, direct or indirect with heat radiation to the air in, thereby dispel the heat fast, with the radiating rate that improves insulated gate bipolar transistor. Because the heat conduction effect preferred of pottery heat dissipation base plate, the utility model provides an in the insulated gate bipolar transistor working process heat dissipation untimely, perhaps the radiating effect is relatively poor, and lead to insulated gate bipolar transistor's operating temperature too high and break down, the problem of intelligent power module is burnt out even when serious.
Referring to fig. 3 or 4, in an embodiment, the igbt further includes:
and a thermal conductive sheet 40, wherein the thermal conductive sheet 40 is disposed between the igbt chip 30 and the mounting substrate 20.
In this embodiment, the heat conducting sheet 40 may be implemented by using an electrically conductive material with high thermal conductivity, for example, by using a metal material with high thermal conductivity, and the orthographic projection of the igbt chip 30 on the heat conducting sheet 40 is located inside the edge of the heat conducting sheet 40. That is, the bonding surface formed on the lower surface of the igbt chip 30 is smaller than the area of the upper surface of the heat conductive sheet 40, and when the igbt chip 30 is bonded to the heat conductive sheet 40, the remaining portion of the upper surface of the heat conductive sheet 40 forms a heat dissipation area, and since the area of the heat dissipation area is larger than the area of the bonding surface of the two, the area of the upper surface of the heat conductive sheet 40 is larger than the area of the lower surface of the igbt chip 30. Due to the arrangement, the heat flux density of the heat can be greatly attenuated when the heat is diffused from the insulated gate bipolar transistor chip 30 to the heat conducting sheet 40, so that the overhigh temperature of the lower surface of the insulated gate bipolar transistor chip 30 can be avoided, and the thermal reliability of the intelligent power module can be improved. A copper sheet slightly larger than the area of a chip is welded below the insulated gate bipolar transistor chip 30, when the chip generates heat, the heat is firstly transmitted to the mounting substrate 20 through the copper sheet, and then transmitted to the heat-conducting silicone grease and the ceramic radiating fin 10, the heat conductivity of the copper sheet is higher than that of the mounting substrate 20, the copper sheet can quickly absorb the heat generated by the chip, and the temperature of the chip can be timely and effectively controlled. The thermal conductivity of the heat-conducting sheet 40 is higher than that of the mounting substrate 20, and the heat generated by the chip can be quickly absorbed, so that the temperature of the chip can be effectively controlled in time.
The heat conducting sheet 40 can be realized by adopting a copper substrate or an aluminum substrate, and a silver layer is plated on the surface of the copper substrate, so that the contact area between the insulated gate bipolar transistor chip 30 and the mounting substrate 20 is increased, the mounting surface between the insulated gate bipolar transistor chip 30 and the circuit wiring layer is increased, the insulated gate bipolar transistor chip 30 and the mounting substrate 20 are better attached, the welding firmness of the mounting substrate 20 and a welding flux is favorably improved, and the problem of welding flux holes generated in the welding process or the use thermal cycle process can be reduced.
Referring to fig. 3 or 4, in an embodiment, the size of the thermal conductive sheet 40 is positively correlated to the magnitude of the current flowing through the igbt chip 30.
It can be understood that, considering that the larger the current of the smart power module is, the more the heat generated by the igbt chip 30 is, in order to maintain good heat dissipation of the igbt chip 30 under the high-current operating condition, in this embodiment, the thickness of the thermal conductive sheet 40 is proportional to the operating current of the smart power module. Thus, when the working current of the power module is high, the thickness of the heat conducting sheet 40 is thick, and more heat can be absorbed and transferred, so that a good heat dissipation effect of the heat conducting sheet 40 can be ensured.
Referring to fig. 3 or 4, in an embodiment, the igbt further includes:
a fast recovery diode 50, the fast recovery diode 50 and the IGBT chip 30 being connected in anti-parallel.
In this embodiment, the number and the positions of the fast recovery diodes 50 (disposed on the heat conductive sheet 40) correspond to those of each igbt chip 30, and in this embodiment, the number of the fast recovery diodes 50 may be selected to be six, and the six fast recovery diodes 50 are respectively marked as "six". In this embodiment, the fast recovery diode 50 is a high-power anti-parallel diode, and is configured to realize fast turn-off of the igbt chip 30, so that high electromotive force generated by the igbt chip 30 is consumed in a continuous current manner in a loop, thereby protecting the igbt chip 30 from being damaged. When the chip 30 is set as a SiC IGBT based on the IGBT, the switching loss of the intelligent power module is reduced to be low, which is favorable for saving electric energy and reducing the heat generation of the module, and the fast recovery diode 50 made of Si material or the schottky diode is selected as the fast recovery diode 50 to realize, so that the production cost of the intelligent power module is reduced while the power consumption of the intelligent power module is low.
In some embodiments, the IGBT chip 30 may also be implemented by a reverse IGBT, which is integrated on the same chip with the fast recovery diode 50 packaged in anti-parallel with the IGBT chip 30, so as to reduce the size of the inverter bridge circuit. So set up, be favorable to improving power density, reduce the volume, manufacturing cost and the encapsulation processing procedure of high integrated intelligent power module, still be favorable to improving intelligent power module's reliability simultaneously.
Referring to fig. 3 or fig. 4, in an embodiment, the igbt further includes a thermal conductive silicone adhesive layer 60, and the thermal conductive silicone adhesive layer 60 is disposed between the ceramic heat dissipation layer and the mounting substrate 20.
In this embodiment, the heat conductive silicone is used to connect and fix the ceramic heat dissipation layer and the mounting substrate 20, and also used to improve the heat dissipation efficiency of the mounting substrate 20 and prevent the heat from blocking the mounting substrate 20.
Referring to fig. 3 or 4, in an embodiment, the igbt further includes a package housing 70, and the ceramic heat sink 10, the mounting substrate 20, the ceramic heat sink 10, and the igbt chip 30 are packaged in the package housing 70.
In this embodiment, the package housing 70 may be made of epoxy resin, aluminum oxide, and heat conductive filling material, wherein the heat conductive filling material may be boron nitride or aluminum nitride, and the insulation property of aluminum nitride and boron nitride is better, and the heat conductivity is higher, and the heat resistance and the heat conductivity are better, so that the aluminum nitride and boron nitride have higher heat transfer capability. When the package case 70 is manufactured, materials such as epoxy resin, aluminum oxide, boron nitride, aluminum nitride and the like can be mixed, and then the mixed package material is heated; after cooling, the encapsulating material is crushed, and then the material of the package housing 70 is roll-formed by an ingot molding process to form the package housing 70, and then the chip and the mounting substrate 20 are packaged in the package housing 70. Or the mounting substrate 20 with the chip mounted thereon is placed in a mold through an injection molding process and a packaging mold, and then a packaging material is injected into the mold to package the chip and the mounting substrate 20 in the package housing 70, so as to form the package housing 70 after molding. Therefore, the chip can be subjected to insulation treatment, and the EMI performance of the intelligent power module can be improved.
The smart power module may employ a full-envelope package and a half-envelope package. In order to improve the heat dissipation efficiency of the smart power module, when the smart power module is packaged in a half-package manner, the mounting substrate 20 of the smart power module may be partially exposed outside the package housing 70, and when the smart power module is further provided with the heat sink 70, the surface of the mounting substrate 20 exposed outside the package housing 70 of the smart power module may be better attached to the heat sink 70.
Referring to fig. 2 to 4, in an embodiment, the igbt further includes a pin 80, and one end of the plurality of pins 80 is fixedly disposed on the mounting substrate 20 and extends in a direction away from the mounting substrate 20.
In this embodiment, a pin 80 pad 23 of the pin 80 is further disposed on the circuit wiring layer 20, and the pin 80 is correspondingly soldered on the pin 80 pad.
The pin 80 can be selected as a straight pin 80, the pin 80 is welded at a pad position of the pin 80 on the mounting position 221 corresponding to the circuit wiring layer 20, and is electrically connected with the igbt chip 30 and the fast recovery diode 50 through metal leads. In another embodiment, one end of each pin 80 is fixed on the mounting substrate 20, the other end of each pin 80 extends away from the mounting substrate 20, and the extending direction of each pin 80 is parallel to the plane of the mounting substrate 20.
Referring to fig. 1 or 4, in an embodiment, the package housing 70 and the ceramic heat sink 10 are further provided with mounting holes 71.
It can be understood that the igbt is a high-power switch tube, and heat generated during operation is usually large, so that a radiator needs to be disposed at a position corresponding to the igbt, and in order to achieve fixed connection between the radiator and the igbt, a mounting hole 71 is further disposed on the igbt, so that the igbt is fixed on the radiator through connectors such as screws and bolts, thereby preventing the igbt and the radiator from moving relatively to each other and causing untimely heat dissipation of the igbt.
The utility model also provides an intelligent power module.
Comprises an electric control board (not shown) and a plurality of insulated gate bipolar transistors (IGBT's) as described above;
the insulated gate bipolar transistors are arranged on the electric control board.
In this embodiment, the igbt has both the advantages of high input impedance of the MOSFET and low on-state voltage drop of the GTR. The GTR saturation voltage is reduced, the current carrying density is high, but the driving current is large; the M0SFET has small driving power, high switching speed, large conduction voltage drop and small current carrying density. The IGBT integrates the advantages of the two devices, and has small driving power and reduced saturation voltage. The method is suitable for the fields of current transformation systems such as alternating current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like.
The number of the insulated gate bipolar transistors can be one or multiple, and when the number of the insulated gate bipolar transistors is multiple, the insulated gate bipolar transistors can comprise four insulated gate bipolar transistors or six insulated gate bipolar transistors, and the six insulated gate bipolar transistors form an inverter circuit, so that the inverter circuit is applied to electrical equipment such as an inverter power supply, a frequency converter, refrigeration equipment, metallurgical mechanical equipment, electric traction equipment and the like, in particular to variable frequency household appliances. In the embodiment, six insulated gate bipolar transistors can be selected to form a three-phase inverter bridge circuit, and the three-phase inverter bridge circuit comprises a three-phase upper bridge arm insulated gate bipolar transistor and a three-phase lower bridge arm insulated gate bipolar transistor. The insulated gate bipolar transistors may form one or more combinations of a PFC power switch module, a compressor power module, and a fan power module.
In an embodiment, the intelligent power module further includes a driving chip for driving the igbt to operate, and when the intelligent power module operates, the driving chip outputs a corresponding PWM control signal to drive and control the corresponding igbt to turn on/off, so as to output driving power to drive the motor and other loads to operate. When the insulated gate bipolar transistor is driven to be conducted, charging current is provided for the insulated gate bipolar transistor, so that the gate-source electrode voltage of the insulated gate bipolar transistor rapidly rises to a required value, and the insulated gate bipolar transistor switch can be ensured to be conducted rapidly. And the voltage between the gate and the source of the insulated gate bipolar transistor is ensured to be kept stable during the conduction period of the insulated gate bipolar transistor, so that the insulated gate bipolar transistor is reliably conducted. One driving chip or a plurality of driving chips can be arranged in the intelligent power module, when one driving chip is arranged, the driving chip outputs a plurality of driving signals to drive each insulated gate bipolar transistor to work, when a plurality of driving chips are arranged, the driving chips can be divided into an upper bridge arm driving chip and a lower bridge arm driving chip, or the number of the insulated gate bipolar transistors is set correspondingly, that is, each driving chip drives one insulated gate bipolar transistor, compared with the case that one integrated driving chip is adopted to drive a plurality of insulated gate bipolar transistors simultaneously, the algorithm of the driving chip of the embodiment is simple, the response speed of the insulated gate bipolar transistors can be improved, and the driving chip independently drives the insulated gate bipolar transistor, so that the working state of the insulated gate bipolar transistor can be better monitored, and the reliability of the intelligent power module is improved.
In an embodiment, each driving chip is stacked on an insulated gate bipolar transistor, so that the driving insulated gate bipolar transistor and the driving chip form a stacked structure and are integrally arranged, the mounting position of the driving chip can be reduced on the mounting substrate, the area of the mounting substrate is reduced, the spatial distance between the insulated gate bipolar transistor and the driving chip is further shortened, the size of the intelligent power module can be further reduced, and the utility model provides a miniaturized intelligent power module. The drive chip is stacked on the insulated gate bipolar transistor, and circuit wiring between the drive chip and the insulated gate bipolar transistor is shorter, so that the drive chip can monitor the working state of the insulated gate bipolar transistor more quickly and more effectively, for example, whether the heating is serious or not, and then timely acts to avoid the intelligent power module from being damaged, and the reliability of the system is improved. The physical connection distance between the bonding wire and the lead between the insulated gate bipolar transistor and the driving chip is shortened, and parasitic inductance introduced by the bonding wire and the lead is reduced.
The utility model relates to an air conditioner, include as above insulated gate bipolar transistor, perhaps as above intelligent power module.
The detailed structures of the intelligent power module and the insulated gate bipolar transistor can refer to the above embodiments, and are not described herein again; it can be understood that, because the utility model discloses used above-mentioned intelligent power module and insulated gate bipolar transistor among the air conditioner, consequently, the utility model discloses the embodiment of air conditioner includes all technical scheme of the whole embodiments of above-mentioned intelligent power module and insulated gate bipolar transistor, and the technological effect that reaches is also identical, no longer gives unnecessary details here.
In practical application, the air conditioner further comprises an electric control board, the insulated gate bipolar transistor and/or the intelligent power module are/is arranged on the electric control board, and then the insulated gate bipolar transistor and/or the intelligent power module are electrically connected with electronic elements on the electric control board through circuit wiring.
The above is only the optional embodiment of the present invention, and not therefore the limit of the patent scope of the present invention, all of which are in the concept of the present invention, the equivalent structure transformation of the content of the specification and the drawings is utilized, or the direct/indirect application is included in other related technical fields in the patent protection scope of the present invention.
Claims (10)
1. An insulated gate bipolar transistor, comprising:
a ceramic heat sink;
the mounting substrate is arranged on the ceramic radiating fin, and a mounting position is arranged on the mounting substrate;
and the insulated gate bipolar transistor chip is arranged on the mounting position of the mounting substrate.
2. The insulated gate bipolar transistor of claim 1, further comprising:
and the heat conducting fin is arranged between the insulated gate bipolar transistor chip and the mounting substrate.
3. The igbt of claim 2, wherein the thermal conductive sheet has a size that positively correlates with the magnitude of current flowing through the igbt chip.
4. The insulated gate bipolar transistor of claim 1, further comprising:
and the fast recovery diode is connected with the insulated gate bipolar transistor chip in an anti-parallel mode.
5. The igbt of claim 1, further comprising a thermally conductive silicone layer disposed between the ceramic heat sink layer and the mounting substrate.
6. The insulated gate bipolar transistor of any one of claims 1 to 5, further comprising a package housing, wherein the ceramic heat sink, the mounting substrate, the ceramic heat sink, and the insulated gate bipolar transistor die are packaged within the package housing.
7. The igbt of claim 6, further comprising a plurality of leads, one end of each of the plurality of leads being fixedly disposed on the mounting substrate and extending away from the mounting substrate.
8. The igbt of claim 6 wherein mounting holes are further provided in the package body and the ceramic heat sink.
9. An intelligent power module, comprising an electronic control board and a plurality of insulated gate bipolar transistors according to any one of claims 1 to 8;
the insulated gate bipolar transistors are arranged on the electric control board.
10. An air conditioner comprising an insulated gate bipolar transistor according to any one of claims 1 to 8 or a smart power module according to claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020029370.9U CN211182190U (en) | 2020-01-07 | 2020-01-07 | Insulated gate bipolar transistor, intelligent power module and air conditioner |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020029370.9U CN211182190U (en) | 2020-01-07 | 2020-01-07 | Insulated gate bipolar transistor, intelligent power module and air conditioner |
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| CN211182190U true CN211182190U (en) | 2020-08-04 |
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| CN202020029370.9U Active CN211182190U (en) | 2020-01-07 | 2020-01-07 | Insulated gate bipolar transistor, intelligent power module and air conditioner |
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| CN (1) | CN211182190U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7141498B1 (en) | 2021-03-12 | 2022-09-22 | ウォルトン アドバンスト エンジニアリング インク | Thin system-in-package |
| JP7141497B1 (en) | 2021-03-12 | 2022-09-22 | ウォルトン アドバンスト エンジニアリング インク | system in package |
-
2020
- 2020-01-07 CN CN202020029370.9U patent/CN211182190U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7141498B1 (en) | 2021-03-12 | 2022-09-22 | ウォルトン アドバンスト エンジニアリング インク | Thin system-in-package |
| JP7141497B1 (en) | 2021-03-12 | 2022-09-22 | ウォルトン アドバンスト エンジニアリング インク | system in package |
| JP2022145399A (en) * | 2021-03-12 | 2022-10-04 | ウォルトン アドバンスト エンジニアリング インク | system in package |
| JP2022145400A (en) * | 2021-03-12 | 2022-10-04 | ウォルトン アドバンスト エンジニアリング インク | Thin system in package |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230118 Address after: 400064 plant 1, No. 70, Meijia Road, Nan'an District, Chongqing Patentee after: Meiken Semiconductor Technology Co.,Ltd. Address before: 528311 Lingang Road, Beijiao Town, Shunde District, Foshan, Guangdong Patentee before: GD MIDEA AIR-CONDITIONING EQUIPMENT Co.,Ltd. Patentee before: MIDEA GROUP Co.,Ltd. |