CN110148594B

CN110148594B - Intelligent power module and air conditioner

Info

Publication number: CN110148594B
Application number: CN201910468337.8A
Authority: CN
Inventors: 李媛媛; 冯宇翔
Original assignee: Midea Group Co Ltd; GD Midea Air Conditioning Equipment Co Ltd
Current assignee: Meiken Semiconductor Technology Co ltd
Priority date: 2019-05-30
Filing date: 2019-05-30
Publication date: 2021-05-25
Anticipated expiration: 2039-05-30
Also published as: CN110148594A

Abstract

The invention discloses an intelligent power module and an air conditioner, wherein the intelligent power module comprises: the first control signal receiving end and the second control signal receiving end receive the control signal output by the main controller; the controlled end of the three-phase upper bridge arm circuit is connected with the first control signal receiving end, and each phase of upper bridge arm circuit in the three-phase upper bridge arm circuit comprises a gallium nitride type HEMT tube; and the controlled end of the three-phase lower bridge arm circuit is connected with the signal receiving end, and each phase of lower bridge arm circuit in the three-phase lower bridge arm circuit comprises a gallium nitride type HEMT tube. The invention simplifies the internal structure and the circuit structure of the bridge arm driving circuit, is beneficial to the space utilization rate of the intelligent power module, reduces the volume of the intelligent power module and reduces the occupied area of the intelligent power module on the electric control board.

Description

Intelligent power module and air conditioner

Technical Field

The invention relates to the technical field of electronic circuits, in particular to an intelligent power module and an air conditioner.

Background

Intelligent Power modules, i.e., ipm (intelligent Power module), are gaining an increasingly large market with the advantages of high integration, high reliability, etc. The intelligent power module is usually integrated with a driving IC and a power device, and when the intelligent power module works, the driving IC amplifies a logic signal output by the main controller and outputs the logic signal to the power device so as to drive the power device to work. However, integrating the driving IC in the smart power module increases the volume of the smart power module.

Disclosure of Invention

The invention mainly aims to provide an intelligent power module and an air conditioner, and aims to reduce the size of the intelligent power module and reduce the occupied area of the intelligent power module on an electric control board.

In order to achieve the above object, the present invention provides an intelligent power module, including:

the first control signal receiving end and the second control signal receiving end receive the control signal output by the main controller;

the controlled end of the three-phase upper bridge arm circuit is connected with the first control signal receiving end, and each phase of upper bridge arm circuit in the three-phase upper bridge arm circuit comprises a gallium nitride type HEMT (high Electron mobility transistor) tube;

and the controlled end of the three-phase lower bridge arm circuit is connected with the second control signal receiving end, and each phase of lower bridge arm circuit in the three-phase lower bridge arm circuit comprises a gallium nitride type HEMT tube.

Optionally, the intelligent power module further includes a PFC power switch module and a third control signal receiving terminal for receiving a control signal output by the main controller, the PFC power switch module includes a gallium nitride HEMT tube, and a base of the gallium nitride HEMT tube is connected to the third control signal receiving terminal.

Optionally, the intelligent power module further includes a mounting substrate, and a first mounting location and a plurality of second mounting locations are disposed on a surface of one side of the mounting substrate;

the PFC power switch module is arranged on the first installation position, and the three-phase upper bridge arm circuit and the three-phase lower bridge arm circuit are arranged on the corresponding second installation positions.

Optionally, the mounting substrate includes:

a heat-dissipating substrate;

and the circuit wiring layer is arranged on one side surface of the heat dissipation substrate, and is provided with a first mounting position for mounting the PFC power switch module and a second mounting position for mounting the three-phase upper bridge arm circuit and the three-phase lower bridge arm circuit.

Optionally, the smart power module further includes an insulating layer interposed between the circuit wiring layer and the heat dissipation substrate.

Optionally, the intelligent power module further includes a pin, the pin is disposed on the circuit wiring layer, and the pin is electrically connected to the PFC power switch module, the three-phase upper arm circuit, and the three-phase lower arm circuit through a metal wire and the circuit wiring layer.

Optionally, the intelligent power module further includes a package casing for packaging the PFC power switch module, the mounting substrate, the three-phase upper bridge arm circuit, and the three-phase lower bridge arm circuit.

Optionally, the intelligent power module further includes a heat sink disposed on a side of the mounting substrate away from the PFC power switch module, the three-phase upper bridge arm circuit, and the three-phase lower bridge arm circuit.

Optionally, the three-phase upper bridge arm circuit and the three-phase lower bridge arm circuit constitute a compressor power module;

or the three-phase upper bridge arm circuit and the three-phase lower bridge arm circuit form a fan power module.

The invention also provides an air conditioner, which comprises the intelligent power module; the intelligent power module comprises a first control signal receiving end and a second control signal receiving end and is used for receiving a control signal output by the main controller; the controlled end of the three-phase upper bridge arm circuit is connected with the first control signal receiving end, and each phase of upper bridge arm circuit in the three-phase upper bridge arm circuit comprises a gallium nitride type HEMT tube; and the controlled end of the three-phase lower bridge arm circuit is connected with the second control signal receiving end, and each phase of lower bridge arm circuit in the three-phase lower bridge arm circuit comprises a gallium nitride type HEMT tube.

According to the invention, the three-phase upper bridge arm circuit and the three-phase lower bridge arm circuit are integrated in the same package to form the intelligent power module, each phase of bridge arm driving circuit in the three-phase upper bridge arm circuit and the three-phase lower bridge arm circuit is realized by adopting the gallium nitride type HEMT, the gallium nitride type HEMT is directly controlled by the main controller, and a driving IC is not required to be arranged to amplify or logically convert a control signal of the main controller, so that the response speed of the three-phase upper bridge arm circuit and the three-phase lower bridge arm circuit is favorably improved. And a driving IC is not required to be arranged, so that the internal structure and the circuit structure of the bridge arm driving circuit can be simplified, the size and the design difficulty of the intelligent power module can be reduced, the difficulty of arrangement and wiring of each device in the intelligent power module can be reduced, the space utilization rate of the intelligent power module is facilitated, the size of the intelligent power module is reduced, and the occupied area of the intelligent power module on an electric control board is reduced.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.

Fig. 1 is a schematic circuit diagram of an embodiment of an intelligent power module according to the present invention;

FIG. 2 is a schematic circuit diagram of another embodiment of an intelligent power module according to the present invention;

FIG. 3 is a schematic structural diagram of an embodiment of an intelligent power module according to the invention;

fig. 4 is a schematic structural diagram of another embodiment of the smart power module according to the present invention.

The reference numbers illustrate:

the implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The invention provides an intelligent power module.

The intelligent Power module, i.e. ipm (intelligent Power module), is suitable for frequency converter of driving motor and various inverter Power supplies, so as to implement the functions of frequency conversion speed regulation, metallurgical machinery, electric traction and servo drive. The motor is particularly suitable for driving motors of compressors of air conditioners, refrigerators and the like to work. When the frequency conversion power module is applied to a frequency conversion air conditioner, because the algorithm of the frequency conversion drive is basically solidified under most conditions, in order to save the volume, improve the anti-interference capability and lighten the design workload of a peripheral electric control version, a power device is integrated on a circuit board to form an intelligent power module. When the power module works, because most power devices are realized by IGNT and MOS (metal oxide semiconductor) tubes, and the driving voltage of the power devices is generally 12V or 15V, a bridge arm driving circuit is generally connected between the main controller and the power module in series to drive the power devices to work. In some highly integrated smart power modules, the power devices or diodes of the PFC circuit are also typically integrated together in the smart power module.

However, in the intelligent power module integrated with the PFC power device, a function of driving the PFC power device to operate is usually integrated in a bridge arm driving circuit, for example, an HVIC chip, so that the HVIC chip needs to drive driving signals of the inverter bridge circuit and the PFC power switch module at the same time, which makes an internal hardware circuit structure and a software algorithm program of the HVIC chip complicated. Further, when the HVIC performs processing such as boosting of the received control signal, the response time of the control signal is increased, and the response speed of each switching tube is decreased. In addition, the size of the HVIC chip also needs to be increased, which is not beneficial to the arrangement and wiring of each device in the intelligent power module, the space utilization rate is low, and further the size of the intelligent power module is larger, and the occupied area of the intelligent power module on the electric control board is easily increased.

In order to solve the above problem, referring to fig. 1, in an embodiment of the present invention, the smart power module includes:

a first control signal receiving terminal and a second control signal receiving terminal for receiving the control signal outputted from the main controller 100;

the controlled end of the three-phase upper bridge arm circuit 10 is connected with the first control signal receiving end, and each phase of upper bridge arm circuit in the three-phase upper bridge arm circuit 10 comprises a gallium nitride (GaN) type HEMT (high electron mobility transistor), namely a GaN HEMT;

and a controlled end of the three-phase lower bridge arm circuit 20 is connected with the second control signal receiving end, and each phase of lower bridge arm circuit in the three-phase lower bridge arm circuit 20 comprises a gallium nitride type HEMT tube.

In this embodiment, the number of the first control signal receiving terminals is three, which are HO1, HO2, and HO3, respectively, and the first control signal receiving terminals HO1, HO2, and HO3 receive the logic input signals, i.e., the control signals, output by the first control terminals UHIN, VHIN, and WHIN of the main controller 100, respectively; the number of the second control signal receiving terminals is also three, which are respectively LO1, LO2, and LO3, and the second control signal receiving terminals HO1, HO2, and HO3 respectively receive the logic input signals, i.e., the control signals, output by the second control terminals ULIN, VLIN, and WLIN of the main controller 100. In some embodiments, the smart power module further includes a third control signal receiving terminal PFCOUT connected to the PFC power switch module 30.

Each phase of the upper three-phase bridge arm circuit 10 and the lower three-phase bridge arm circuit 20, that is, the bridge arm switching tubes, is implemented by using gallium nitride type HEMT tubes, and under the condition of the same on-resistance, gallium nitride (GaN) transistors, especially GaN HEMTs, have lower terminal capacitance and no reverse recovery loss caused by body diodes, and can reduce switching loss. In addition, the switching speed of the gallium nitride transistor is higher than that of the silicon-based switching tube, so that the overall switching performance is better than that of the silicon-based switching tube, and higher switching frequency can be realized, thereby improving the power density and transient performance while maintaining reasonable switching loss. Because the three-phase upper bridge arm circuit 10 and the three-phase lower bridge arm circuit 20 use the GaN HEMT as the switching element, the GaN HEMT does not need to be connected with the FRD in parallel due to the two-dimensional electron gas characteristic of the GaN HEMT, and the grid charge of the GaN HEMT is far less than that of the IGBT, so the grid is not needed, and the grid is not protected by a connecting resistor.

In the three-phase upper bridge arm circuit 10, the gate of the HEMT tube 1121 of the U-phase upper bridge arm is connected with a first control signal receiving end HO 1; the grid electrode of the V-phase upper bridge arm HEMT tube 1122 and a first control signal receiving end HO 2; the gate of the W-phase upper bridge arm HEMT tube 1123 is connected to the first control signal receiving terminal HO 3. The drain of the HEMT tube 1121, the drain of the HEMT tube 1122, and the drain of the HEMT tube 1123 are connected and serve as a high voltage input terminal P of the intelligent power module 200, and P is generally connected to 300V. The grid electrode of the U-phase lower bridge arm HEMT tube 2124 and the end of a second control signal receiving end LO1 are connected with the three-phase lower bridge arm circuit 20; the grid electrode of the V-phase lower bridge arm HEMT tube 2125 and a second control signal receiving end LO2 end; the gate of the W-phase lower arm HEMT tube 2126 is connected to the second control signal receiving terminal LO 3. The source of the HEMT tube 2124 serves as a U-phase low-voltage reference end UN of the smart power module 200; the source electrode of the HEMT tube 2125 serves as a V-phase low-voltage reference terminal VN of the intelligent power module 200; the emitter of the HEMT tube 2126 serves as a W-phase low-voltage reference terminal WN of the intelligent power module 200. The common end of the U-phase upper arm HEMT tube 2121 and the U-phase lower arm HEMT tube 2124 is the output end of the U-phase high-voltage region, the common end of the V-phase upper arm HEMT tube 2122 and the V-phase lower arm HEMT tube 2125 is the output end V of the V-phase high-voltage region, and the common end of the W-phase upper arm HEMT tube 2123 and the V-phase lower arm HEMT tube 2126 is the output end V of the V-phase high-voltage region.

The main controller 100 is an MCU, in which a logic controller, a memory, a data processor, etc. and a software program and/or module stored in the memory and operable on the data processor are integrated, and the MCU outputs corresponding control signals to the three-phase upper bridge arm circuit 10 and the three-phase lower bridge arm circuit 20 by operating or executing the software program and/or module stored in the memory and calling data stored in the memory, so that the gallium nitride HEMT transistors in the three-phase upper bridge arm circuit 10 and the three-phase lower bridge arm circuit 20 are turned on/off according to the received control signals to drive the fan, the compressor, etc. to operate.

It can be understood that the driving voltage of the GaN HEMT is small, the control signal of the main controller 100 can be directly used as the driving of the GaN HEMT, that is, the three-phase upper bridge arm circuit 10 and the three-phase lower bridge arm circuit 20 are directly controlled by the main controller 100, and it is not necessary to provide a bridge arm driving circuit, such as an HVIC chip, which can shorten the line distance between the bridge arm circuit and the main controller 100, and further can improve the response speed of each GaN HEMT in the bridge arm circuit to the control signal output by the main controller 100, and shorten the line, and can also reduce the influence of the interference signal on the line on the work of the bridge arm circuit.

The main controller 100 of the present embodiment is independent of the intelligent power module 200, and in practical application, the main controller 100 and the intelligent power module 200 are disposed on an electric control board and electrically connected through a circuit wiring or a wire. Of course, in other embodiments, the main controller 100 may be integrated into the smart power module 200 to increase the integration of the smart power module. The single bare chips in the three-phase upper bridge arm circuit 10 and the three-phase lower bridge arm circuit 20 can be respectively integrated into an independent chip, and then are packaged for the second time and then are integrally arranged to manufacture the high-integration intelligent power module.

According to the invention, the three-phase upper bridge arm circuit 10 and the three-phase lower bridge arm circuit 20 are integrated in the same package to form the intelligent power module, each phase of bridge arm driving circuit in the three-phase upper bridge arm circuit 10 and the three-phase lower bridge arm circuit 20 is realized by adopting a gallium nitride type HEMT (high Electron mobility transistor) tube, the gallium nitride type HEMT tube is directly controlled by the main controller 100, and a driving IC (integrated Circuit) is not required to be arranged to amplify or logically convert a control signal of the main controller 100, so that the response speed of the three-phase upper bridge arm circuit 10 and the three-phase lower bridge arm circuit 20 is favorably improved, and the working efficiency of the. And a driving IC is not required to be arranged, so that the internal structure and the circuit structure of the bridge arm driving circuit can be simplified, the size and the design difficulty of the intelligent power module can be reduced, the difficulty of arrangement and wiring of each device in the intelligent power module can be reduced, the space utilization rate of the intelligent power module is facilitated, the size of the intelligent power module is reduced, and the occupied area of the intelligent power module on an electric control board is reduced.

Referring to fig. 2, in an embodiment, the intelligent power module further includes a PFC power switch module 30 and a third control signal receiving terminal PFCOUT for receiving the control signal output by the main controller 100, where the PFC power switch module 30 includes a gallium nitride HEMT device, and a base of the gallium nitride HEMT device is connected to the third control signal receiving terminal PFCOUT.

In this embodiment, in the PFC power switch module 30, only the gallium nitride type HEMT transistor may be integrated into the intelligent power module, or the PFC circuits formed by other devices such as a diode and an inductor may be integrated into the intelligent power module. The PFC circuit may be a boost PFC circuit, or a buck PFC circuit, or a boost PFC circuit. The PFC circuit adjusts power factors of the direct current, and the adjusted direct current is output to the power input end of the inverter bridge circuit, so that each power module drives a corresponding load to work. The regulated direct current can also generate working voltage of control chips such as 5V and the like so as to provide working voltage for circuit modules such as the main controller 100 and the like. Since the PFC power switch module 30 uses the GaN HEMT tube 3127 as a switching element, the GaN HEMT does not need a parallel FRD due to its two-dimensional electron gas characteristics, and the GaN HEMT does not need a gate electrode with much less charge than the IGBT and is therefore protected without a gate electrode using a connection resistor. The driving voltage of the GaN HEMT is small, and the control signal of the main controller 100 can be directly used as the driving of the GaN HMET, that is, the PFC power switch module 30 can be directly controlled by the main controller 100 without providing a driving circuit for the PFC power switch module 30. By the arrangement, the line distance between the PFC power switch module 30 and the main controller 100 can be shortened, the response speed of the GaN HEMT tube 3127 of the PFC power switch module 30 to the control signal output by the main controller 100 can be increased, the shortening of the line can reduce the influence of the interference signal on the line on the work of the GaN HEMT of the PFC power switch module 30. The PFC power switch module 30 uses the source PFC and the drain-VP of the GaN HEMT tube 3127 for switching in the PFC inductor.

It should be noted that the switching frequency of the PFC power switch module 30 is much higher than the switching frequency of the bridge arm circuit, for example, in practical application, the switching frequency of the PFC power switch module 30 is twice the switching frequency of each switching tube of the bridge arm circuit, if the driving signal of the PFC power switch module 30 is integrated in the driving chip, the PFC power switch module 30 easily brings serious electromagnetic interference to the bridge arm circuit, so as to affect the normal operation of the bridge arm circuit, the PFC power switch module 30 and the three-phase bridge arm circuit of this embodiment are directly controlled by the main controller 100, and the interference of the PFC power switch module 30 to the three-phase bridge arm circuit can be reduced.

Referring to fig. 3 or 4, in an embodiment, the smart power module further includes a mounting substrate 40, and a first mounting location and a plurality of second mounting locations are disposed on a side surface of the mounting substrate 40;

the PFC power switch module 30 is disposed on the first mounting position, and the three-phase upper arm circuit 10 and the three-phase lower arm circuit 20 are disposed on the corresponding second mounting position.

In this embodiment, the circuit wiring layer 41 is disposed on the mounting substrate 40, and the circuit wiring layer 41 forms corresponding lines and mounting positions, i.e., pads, for mounting each electronic component in the power device on the mounting substrate 40 according to the circuit design of the smart power module. Specifically, after the insulating layer 42 is provided on the mounting substrate 40, a copper foil is laid on the insulating layer 42 and etched in accordance with a preset circuit design, thereby forming the circuit wiring layer 41. After the electronic components of the circuit modules in the power device are integrated in the circuit wiring layer 41 on the mounting substrate 40, the electrical connection between the circuit modules can also be realized by a metal binding wire.

When the mounting substrate 40 is implemented using an aluminum nitride ceramic substrate, the aluminum nitride ceramic substrate includes an insulating heat dissipation layer and a circuit wiring layer 41 formed on the insulating heat dissipation layer. When a substrate made of a metal material is used, the substrate includes a metal heat dissipation layer, an insulating layer 42 laid on the metal heat dissipation layer, and a circuit wiring layer 41 formed on the insulating layer 42. In the present embodiment, the mounting substrate 40 may be selected as a single-sided wiring board. The insulating layer 42 is interposed between the circuit wiring layer 41 and the metal mounting board 40. The insulating layer 42 is used to realize electrical isolation and electromagnetic shielding between the circuit wiring layer 41 and the metal mounting substrate 40, and to reflect external electromagnetic interference, thereby preventing external electromagnetic radiation from interfering with normal operation of the power device, and reducing interference influence of electromagnetic radiation in the surrounding environment on electronic components in the smart power module.

In some embodiments, the mounting substrate 40 may further include an insulating layer 42 disposed on the mounting substrate 40 according to a material of the mounting substrate 40, for example, when the mounting substrate 40 is implemented by a material having a conductive property, such as an aluminum material or a copper material, the insulating layer 42 may be made of a material, such as a thermoplastic adhesive or a thermosetting adhesive, so as to implement a fixed connection and insulation between the mounting substrate 40 and the circuit wiring layer 41. The insulating layer 42 may be implemented by using a high thermal conductivity insulating layer 42 implemented by mixing one or more materials of epoxy resin, alumina, and high thermal conductivity filling material.

It can be understood that, since the intelligent power module of this embodiment does not need to be provided with a driving IC, when the mounting substrate and the circuit wiring layer are manufactured, electromagnetic interference of the power device to the driving IC does not need to be considered, and therefore, the wiring difficulty of the circuit wiring layer can be reduced. The driving IC is a non-power device, the generated heat is smaller than that of the power device, and when the driving IC is not needed, the heat insulation arrangement between the driving IC and the power device is not needed to be considered.

Referring to fig. 3 or 4, in an embodiment, the intelligent power module further includes a pin 50, and the pin 50 is disposed on the circuit wiring layer 41 and electrically connected to the PFC power switch module 30, the three-phase upper arm circuit 10, and the three-phase lower arm circuit 20 through metal wires and the circuit wiring layer 41.

In this embodiment, the pin 50 can be implemented by a gull-wing pin 50 or a straight pin 50, and in this embodiment, preferably, the straight pin 50 is soldered on the low thermal conductivity insulating substrate, and the pin 50 is electrically connected to the power module 10 through a metal wire 60 at a pad position on the mounting location corresponding to the circuit wiring layer 41.

In another embodiment, one end of each pin 50 is fixed on the mounting substrate 40, the other end of each pin 50 extends away from the mounting substrate 40, and the extending direction of each pin 50 is parallel to the plane of the mounting substrate 40.

Compared to the gull-wing type pin 50, the pin 50 of the present embodiment is disposed in parallel with the mounting substrate 40, i.e., the pin 50 is in a flat structure. The arrangement is such that when the heat dissipation layer 110 of the mounting substrate 40 is embedded in an electric control board in an air conditioner, the insulating layer 42 of the mounting substrate 40 is attached to the electric control board. The pin 50 of the intelligent power module is fixed on the electric control board through soldering tin and conductive adhesive, and the extension section of the pin 50 is attached to the electric control board, so that the pin 50 can be prevented from being broken when the electric control board falls. And mounting substrate 40 part inlays and locates in the automatically controlled board for intelligent power module installs on automatically controlled board, and the fastening nature of intelligent power module and automatically controlled board is better, and then prevents that intelligent power module and automatically controlled board from taking place relative motion and making automatically controlled board can not normally work at the in-process that carries or falls, or leads to intelligent power module fracture and damage intelligent power module.

It can be understood that, in this embodiment, a driving IC is not required to be provided, a boosting process of a control signal output by the main controller 100 is not required to be performed, a bootstrap circuit, a filter capacitor and the like are not required to be provided, and the pins of the intelligent power module are also reduced in adaptability, so that the problem that the area of the mounting substrate is large due to the safety distance between the pins can be solved, and the area of the intelligent power module can be further reduced.

Referring to fig. 3 or 4, in an embodiment, the smart power module further includes a package casing 60 that encapsulates the PFC power switch module 30, the mounting substrate 40, the three-phase upper arm circuit 10, and the three-phase lower arm circuit 20.

In this embodiment, the package housing 60 may be made of epoxy resin, aluminum oxide, and heat conductive filling material, wherein the heat conductive filling material may be boron nitride or aluminum nitride, and the insulation property of aluminum nitride and boron nitride is better, and the heat conductivity is higher, and the heat resistance and the heat conductivity are better, so that the aluminum nitride and boron nitride have higher heat transfer capability. When the package case 60 is manufactured, materials such as epoxy resin, aluminum oxide, boron nitride, aluminum nitride and the like can be mixed, and then the mixed package material is heated; after cooling, the packaging material is crushed, and then the packaging shell 60 material is rolled and formed by an ingot particle forming process to form a packaging shell 60, and then the PFC power switch module 30, the three-phase bridge arm circuit and the bridge arm driving circuit are packaged in the packaging shell 60. Or the PFC power switch module 30, the three-phase bridge arm circuit and the bridge arm driving circuit are encapsulated in the encapsulation casing 60 by an injection molding process.

In the smart power module, the package case 60 may be disposed on the mounting substrate 40 and the power module in a covering manner. The lower surface of the aluminum substrate is exposed outside the package, so that the heat dissipation of the power element is accelerated. If the smart power module is further provided with a heat sink 70 for dissipating heat of the power device, the package housing 60 may be wrapped around the mounting substrate 40 and the power component, so that the power module, the mounting substrate 40 and the power component are integrally formed.

Referring to fig. 4, in an embodiment, the intelligent power module further includes a heat sink 70, and the heat sink 70 is disposed on a side of the mounting substrate 40 away from the PFC power switch module 30, the three-phase upper arm circuit 10, and the three-phase lower arm circuit 20.

In this embodiment, the heat sink 70 may be made of high thermal conductive materials with good heat dissipation effects such as aluminum and aluminum alloy, so that heat generated by the power device in the three-phase bridge arm circuit is conducted to the heat sink 70 through the mounting substrate 40, thereby further increasing the contact area between the heat generated by the power device and air and increasing the heat dissipation rate. The heat sink 70 may further include a heat sink 70 body and a plurality of heat dissipating fins disposed at one side of the heat sink 70 body at intervals. With such an arrangement, the contact area between the heat sink 70 and the air can be increased, that is, the contact area between the heat on the heat sink 70 and the air can be increased when the heat sink 70 operates, so as to increase the heat dissipation rate of the heat sink 70. Meanwhile, the material of the radiator 70 can be reduced, and the problem that the cost is too high due to too much material application of the radiating fins is avoided.

Referring to fig. 3 or 4, in an embodiment, the three-phase upper arm circuit 10 and the three-phase lower arm circuit 20 constitute a compressor power module;

or, the three-phase upper bridge arm circuit 10 and the three-phase lower bridge arm circuit 20 constitute a fan power module.

In this embodiment, a plurality of power devices are integrated in both the compressor power module and the fan power module, and the plurality of power devices form a driving inverter circuit, for example, six power devices form a three-phase inverter bridge circuit, or four power devices form a two-phase inverter bridge circuit. Wherein, each power device can be realized by adopting a MOS tube or an IGBT. The power inverter bridge circuit is composed of a plurality of power devices and used for driving loads such as a fan and a compressor to work, and after each power device is arranged on the corresponding installation position of the circuit wiring layer 41, the power devices can be electrically connected with the circuit wiring layer 41 through conductive materials such as soldering tin and the like, and a current loop is formed. Each power device can be attached to the corresponding mounting position of the circuit wiring layer 41 through a flip-chip process, and a current loop is formed between each circuit element and each circuit wiring layer 41 and the metal binding wires.

Referring to fig. 1 to 4, in an embodiment, a fault protection circuit (not shown) for overcurrent, overvoltage, overheat, etc. is further integrated in the smart power module. The fault protection circuit can judge whether the fan is in overcurrent or not by detecting the output current of the fan, and feeds an overcurrent protection signal back to the main controller 100, so that the main controller 100 drives the intelligent power module to work according to the overcurrent protection signal output by the fault protection circuit. In the above embodiment, the fault protection circuit may further implement overvoltage protection on the compressor by detecting a dc bus voltage, implement overheat protection on the intelligent power module by detecting a temperature of the intelligent power module, and the overvoltage protection circuit and the overheat protection circuit may be formed by using electronic components such as a voltage sensor, a temperature sensor, a resistor, and a comparator.

The invention also provides an air conditioner which comprises the intelligent power module. The detailed structure of the intelligent power module can refer to the above embodiments, and is not described herein again; it can be understood that, because the intelligent power module is used in the air conditioner of the present invention, the embodiment of the air conditioner of the present invention includes all technical solutions of all embodiments of the intelligent power module, and the achieved technical effects are also completely the same, and are not described herein again.

The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims

1. A smart power module, comprising:

the controlled end of the three-phase upper bridge arm circuit is connected with the first control signal receiving end, each phase of upper bridge arm circuit in the three-phase upper bridge arm circuit comprises a gallium nitride type HEMT (high Electron mobility transistor), and the gallium nitride type HEMT of each phase of upper bridge arm circuit is directly controlled by the main controller;

the controlled end of the three-phase lower bridge arm circuit is connected with the second control signal receiving end, and each phase of lower bridge arm circuit in the three-phase lower bridge arm circuit comprises a gallium nitride type HEMT tube; the gallium nitride type HEMT tube of each phase of lower bridge arm circuit is directly controlled by the main controller;

the intelligent power module also comprises a PFC power switch module and a third control signal receiving end for receiving a control signal output by the main controller, the PFC power switch module comprises a gallium nitride type HEMT tube, and the base of the gallium nitride type HEMT tube is connected with the third control signal receiving end; the gallium nitride type HEMT tube of the PFC power switch module is directly controlled by the main controller;

the pins of the intelligent power module are fixed on the electric control board through soldering tin and conductive adhesive, and the extending sections of the pins of the intelligent power module are attached to the electric control board;

the mounting substrate part of the intelligent power module is embedded in the electric control board.

2. The smart power module as claimed in claim 1, wherein one side surface of the mounting substrate is provided with a first mounting location and a plurality of second mounting locations;

3. The smart power module of claim 2, wherein the mounting substrate comprises:

a heat-dissipating substrate;

4. The smart power module of claim 3 further comprising an insulating layer sandwiched between the circuit wiring layer and the heat sink substrate.

5. The smart power module of claim 3, wherein the pins are disposed on the circuit wiring layer, the pins being electrically connected to the PFC power switch module, the three-phase upper leg circuit, and the three-phase lower leg circuit through metal lines and the circuit wiring layer.

6. The smart power module of claim 2 further comprising a package housing that encapsulates the PFC power switch module, the mounting substrate, the three-phase upper leg circuit, and the three-phase lower leg circuit.

7. The smart power module of claim 2, further comprising a heat sink disposed on a side of the mounting substrate facing away from the PFC power switch module, the three-phase upper leg circuit, and the three-phase lower leg circuit.

8. The intelligent power module as claimed in any one of claims 1 to 7, wherein the three-phase upper leg circuit and the three-phase lower leg circuit constitute a compressor power module;

9. An air conditioner comprising the smart power module as recited in any one of claims 1 to 8.