CN103050470B - SPM and preparation method thereof - Google Patents
SPM and preparation method thereof Download PDFInfo
- Publication number
- CN103050470B CN103050470B CN201210576069.XA CN201210576069A CN103050470B CN 103050470 B CN103050470 B CN 103050470B CN 201210576069 A CN201210576069 A CN 201210576069A CN 103050470 B CN103050470 B CN 103050470B
- Authority
- CN
- China
- Prior art keywords
- insulating barrier
- circuit
- spm
- aluminium base
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
Abstract
Open a kind of SPM of the present invention and preparation method thereof, including an aluminium base, this aluminium base upper surface is provided with insulating barrier on, on this, insulating barrier is provided with a circuit-wiring layer, this circuit-wiring layer is provided with some components and pin, aluminium base lower surface is provided with insulating barrier, this lower insulating barrier is provided with a heat sink, described aluminium base, upper insulating barrier, circuit-wiring layer, some components and pin, and lower insulating barrier is encapsulated in sealing resin, pin runs through sealing resin and stretches out, the side of heat sink is encapsulated by sealing resin, its lower surface is exposed.The present invention can improve heat dispersion by the heat sink set up.Owing to the thermal conductivity of lower insulating barrier and heat sink is far above sealing resin, therefore when SPM normally works, the temperature of internal components is far below existing product, make SPM have higher anti-noise ability and heat dispersion simultaneously, job stability and the service life of SPM are greatly improved.
Description
Technical field
The present invention relates to manufacture field of electronic elements, particularly to a kind of SPM and preparation method thereof.
Background technology
IPM(Intelligent Power Module, SPM) it is a kind of power drive series products that power electronics and integrated circuit technique are combined.SPM integrates device for power switching and high-voltage driving circuit, and in keep overvoltage, overcurrent and the failure detector circuit such as overheated.On the one hand SPM receives the control signal of MCU, drives subsequent conditioning circuit work, on the other hand sends the state detection signal of system back to MCU.Compared with traditional discrete scheme, SPM wins increasing market with its advantage such as high integration, high reliability, it is particularly suitable for driving the converter of motor and various inverter, it it is frequency control, metallurgical machinery, electric propulsion, servo-drive, a kind of desired power level electronic device of frequency-conversion domestic electric appliances.
As shown in Figure 1, existing SPM includes an aluminium base 1, the insulating barrier 2 being located on described aluminium base 1 surface, the wiring 3 of formation on described insulating barrier 2, it is fixed on the some components 4 on described wiring 3 and pin 5, and encapsulates described aluminium base 1, insulating barrier 2.The sealing resin 6 of wiring 3 and some components 4, because SPM is generally used for driving blower fan, the occasions such as compressor, during SPM work, heating ratio is more serious, the most all can be close to radiating block and use in the back side so the aluminium base 1 of SPM is general, noise in order to avoid bringing because aluminium base 1 contacts with radiating block causes SPM out of control, improve the capacity of resisting disturbance of SPM, usually aluminium base 1 is also encapsulated in sealing resin 6, only some noise levels control the low-down occasion mode that just uses aluminium base 1 back side to expose is packaged.Although aluminium base 1 sealing backside can be improved the anti-noise ability of SPM, but the heat dispersion making SPM is greatly reduced, make the long term device within SPM work at high temperature, have impact on performance and the long term life of SPM.This makes anti-noise ability and heat dispersion become a pair implacable contradiction.
Occur in that a kind of new SPM in the recent period, its by sealing resin 6 THICKNESS CONTROL at aluminium base 1 back side in suitable scope so that SPM has isolation noise jamming and the double function of heat conduction concurrently.But this SPM complex manufacturing technology, required precision is high, manufactures apparatus expensive, and yield rate is the highest.
Summary of the invention
The main object of the present invention is to provide a kind of SPM and preparation method thereof, it is intended to improve anti-noise ability and the heat dispersion of SPM simultaneously.
The present invention proposes a kind of SPM, including an aluminium base, this aluminium base upper surface is provided with insulating barrier on, on this, insulating barrier is provided with a circuit-wiring layer, this circuit-wiring layer is provided with some components and pin, described aluminium base lower surface is provided with insulating barrier, this lower insulating barrier is provided with a heat sink, described aluminium base, upper insulating barrier, circuit-wiring layer, some components and pin, and lower insulating barrier is encapsulated in sealing resin, wherein, described pin runs through described sealing resin and stretches out, the side of described heat sink is encapsulated by described sealing resin, the lower surface of described heat sink is exposed.
Preferably, described upper insulating barrier uses and fills Al in epoxide resin material2O3And make, the thermal conductivity of described upper insulating barrier is 2.0W/m k.
Preferably, described lower insulating barrier uses fills BN in epoxide resin material and makes, and the thermal conductivity of described lower insulating barrier is 5.0W/m k.
Preferably, described SPM also includes some at described component, the metal wire of setting up electrical connection between circuit-wiring layer, and aluminium base.
Preferably, described upper insulating barrier is provided with at least one for setting up, with circuit-wiring layer or component, the exposed hole electrically connected for described aluminium base.
The present invention the most also proposes the manufacture method of a kind of SPM, including:
Upper and lower surface at aluminium base forms insulating barrier and lower insulating barrier respectively；
On described, on insulating barrier, form circuit-wiring layer, and some components and pin are installed on described circuit-wiring layer；
Described lower insulating barrier arranges heat sink；
Encapsulate described aluminium base, upper insulating barrier, circuit-wiring layer, some components and pin, and lower insulating barrier.
Preferably, by the way of transmission mould or injection mould, described aluminium base, upper insulating barrier, circuit-wiring layer, some components and pin, and lower insulating barrier are encapsulated.
Preferably, also include before the step that the described upper and lower surface at aluminium base forms insulating barrier and lower insulating barrier respectively:
The upper and lower surface of described aluminium base is carried out corrosion protection process.
Preferably, the described step forming circuit-wiring layer on described on insulating barrier specifically includes:
Copper foil on insulating barrier on described；
Etch described Copper Foil, form described circuit-wiring layer.
Preferably, include before the described step installing some components and pin on described circuit-wiring layer:
Preheat described aluminium base and circuit-wiring layer.
The SPM of the present invention, by lower insulator separation, can reliably realize metal aluminum substrate and extraneous insulation, and the heat sink set up can improve the heat dispersion of SPM.Owing to the thermal conductivity of lower insulating barrier and heat sink is far above sealing resin, therefore when SPM normally works, the temperature of internal components is far below existing product, make SPM have higher anti-noise ability and heat dispersion simultaneously, job stability and the service life of SPM are greatly improved.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of SPM in prior art；
Fig. 2 is the cross-sectional view of SPM of the present invention；
Fig. 3 is the schematic flow sheet of manufacture method one embodiment of SPM of the present invention；
Fig. 4 be SPM of the present invention manufacture method in form the schematic flow sheet of circuit-wiring layer；
Fig. 5 is the schematic flow sheet of another embodiment of manufacture method of SPM of the present invention；
Fig. 6 is the schematic flow sheet of the another embodiment of manufacture method of SPM of the present invention.
The realization of the object of the invention, functional characteristics and advantage will in conjunction with the embodiments, are described further referring to the drawings.
Detailed description of the invention
Below in conjunction with the accompanying drawings and specific embodiment is described further with regard to technical scheme.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
The present invention proposes a kind of SPM.
With reference to the cross-sectional view that Fig. 2, Fig. 2 are SPM of the present invention.
In one embodiment of this invention, this SPM includes an aluminium base 10, the upper and lower surface of this aluminium base 10 is respectively provided with on one insulating barrier 20 and once insulating barrier 60, on this, the upper surface of insulating barrier 20 is provided with a circuit-wiring layer 30, this circuit-wiring layer 30 is provided with some components 40 and pin 50, and the lower surface of lower insulating barrier 60 is provided with a heat sink 70.This aluminium base 10, upper insulating barrier 20, circuit-wiring layer 30, some components 40, pin 50 and lower insulating barrier 60 are encapsulated in sealing resin 80, wherein pin 50 runs through sealing resin 80 and stretches out, the side of heat sink 70 is encapsulated by sealing resin 80, and the lower surface of heat sink 70 is exposed and contacting external air.
Aluminium base 10 preferably employs the rectangular plate of the aluminium alloys such as 1100 or 5052 and makes.Circuit-wiring layer 30 preferably employs copper with heat sink 70 and becomes.The thickness of heat sink 70 is identical with the thickness of circuit-wiring layer 30.
Including some pads 31 on circuit-wiring layer 30, this pad 31 is arranged on aluminium base 10, and is aligned with in multiple, and pin 50 welds with pad 31, for the various signal of input/output.Pin 50 preferably employs aluminum etc. to be had the metal of certain degree of hardness and makes, and aluminium base 10 is fixed by the hardness of available pin 50 when molding.
Component 40 is fixed on circuit-wiring layer 30 on the allocated circuit constituted, component 40 uses the active component such as transistor or diode or the passive element such as electric capacity or resistance, it is also possible to be fixed on aluminium base 10 by component 40 big for the caloric values such as power component by the radiator being made up of copper etc..
Sealing resin 80 can use thermosetting resin to mould by transmission mould mode, it is possible to use injects mould mode and uses thermoplastic resin to mould.
The SPM of the present invention is isolated by lower insulating barrier 60, can reliably realize metal aluminum substrate 10 and extraneous insulation, and the heat sink 70 set up can improve the heat dispersion of SPM.Owing to the thermal conductivity of lower insulating barrier 60 and heat sink 70 is far above sealing resin 80, therefore when SPM normally works, the temperature of internal components is far below existing product, make SPM have higher anti-noise ability and heat dispersion simultaneously, job stability and the service life of SPM are greatly improved.
In the above-described embodiments, upper insulating barrier 20 uses and fills Al at resin material middle and high concentrations such as epoxy resin2O3And make, owing to being filled with Al2O3Can effectively improve the thermal conductivity of upper insulating barrier 20, further increase the heat-sinking capability of SPM.The thermal conductivity of upper insulating barrier 20 is preferably 2.0W/m k, to ensure that the coefficient of expansion of upper insulating barrier 20 matches with sealing resin 80, it is therefore prevented that upper insulating barrier 20 comes off because being heated.
In the above-described embodiments, lower insulating barrier 60 uses fills BN at resin material middle and high concentrations such as epoxy resin and makes, and can effectively improve the thermal conductivity of lower insulating barrier 60 owing to being filled with BN, further increase the heat-sinking capability of SPM.The thermal conductivity of lower insulating barrier 60 is preferably 5.0W/m k, to ensure that the coefficient of expansion of lower insulating barrier 60 matches with sealing resin 80, it is therefore prevented that lower insulating barrier 60 comes off because being heated.
In the above-described embodiments, SPM also includes some at some components 10, the metal wire 90 of setting up electrical connection between circuit-wiring layer 30, and aluminium base 10.This metal wire 90 is preferably aluminum steel, gold thread or copper cash.
In the above-described embodiments, upper insulating barrier 20 is provided with at least one exposed hole 21, and this exposed hole 21 is for passing for metal wire 90, with electrical connection circuit wiring layer 30 and aluminium base 10 or component 40.This exposed hole 21 is arranged on the position close with the earth potential of circuit-wiring layer 30, and its degree of depth need to run through insulating barrier 20 makes aluminium base 10 expose.This exposed hole 21 is preferably provided at the 0.5mm at earth potential edge of circuit-wiring layer 30.
The present invention the most also proposes the manufacture method of a kind of SPM.
Schematic flow sheet with reference to the manufacture method that Fig. 3, Fig. 3 are SPM of the present invention.
In one embodiment of this invention, the manufacture method of SPM, including:
Step S10, the upper and lower surface at aluminium base forms insulating barrier and lower insulating barrier respectively；
Circuit layout as required prepares sizeable aluminium base, preferably employ the aluminium base of 64mm × 30mm, insulating barrier in surface configuration thereon, and in a upper insulating barrier Drilling at least exposed hole, the formation of this exposed hole can transfer to be formed by the milling cutter high-speed rotary that front end is smooth.Owing to this exposed hole is for being connected aluminium base with earth potential, so the position of exposed hole should be close with the earth potential of circuit-wiring layer, but can not be the nearest, otherwise easily it is damaged to circuit-wiring layer during boring, preferably the beeline at exposed hole edge Yu the earth potential edge of circuit-wiring layer is controlled at 0.5mm.The degree of depth of this exposed hole is preferred just to run through upper insulating barrier, if too deep, tying up head when being likely to result in wiring cannot test.Owing to upper insulating barrier is the firmest, therefore the abrasion of milling cutter is very fast.And the least cutter wear of exposed hole diameter is the most notable.Therefore when batch production, it is preferred to use the milling cutter that diameter is thicker, to reduce production cost.It addition, the miniaturization of aluminium base to be taken into account, the diameter of milling cutter should not be too thick, to reduce the area of exposed hole.Therefore the milling cutter preferably employing a diameter of Φ 1.5mm forms exposed hole.Both can reduce the occupied area of exposed hole, and can significantly reduce again the abrasion of milling cutter, thus improve productivity.By the method such as application, pressing, the lower insulating barrier being in softening state is formed at the lower surface of aluminium base, under state, there is certain mobility owing to softening, easily the lower surface at aluminium base is uniformly distributed, but its mobility is unsuitable too strong, is otherwise difficult to molding, preferably employ lepidiod BN filler, make it be in semi-cured state at normal temperatures, hanker entering molten state in follow-up adding, after cooling, form cure states.The size of the lower insulating barrier now formed should be more slightly larger than heat sink, but more slightly smaller than aluminium base.
Step S20, forms circuit-wiring layer on upper insulating barrier；
Upper surface at upper insulating barrier is pasted with as circuit-wiring layer.This wiring preferably employs copper.
Step S30, installs some components and pin on circuit-wiring layer；
First, by solders such as scolding tin, component and pin are arranged on the assigned position of circuit-wiring layer.Secondly, by the way of pressure welding, pin is linked together with circuit-wiring layer.The welding temperature of pressure-welding head is preferably 300 DEG C, it is ensured that tin cream fully melts, and the pressure welding time is not to be exceeded 5 seconds, it is ensured that aluminium base is to be locally heated.Finally, the wiring utilizing metal wire to carry out component and circuit-wiring layer connects, and utilizes metal wire to make aluminium base be connected with earthy wiring, and this metal wire is preferably aluminum steel, gold thread or copper cash.
Step S40, arranges heat sink on lower insulating barrier；
Lower insulating barrier arranges heat sink, or insulating barrier under being formed on heat sink, its effect is identical with effect, does not repeats them here.
Step S50, encapsulation aluminium base, upper insulating barrier, circuit-wiring layer, some components and pin, and lower insulating barrier.
First, toasting aluminium base in oxygen-free environment, baking time is no less than 2 hours, and baking temperature is preferably 125 DEG C, to remove aluminium base and the aqueous vapor of electrical equipment surface attachment；Heat under the conditions of oxygen-free environment, to prevent aluminium base and electrical equipment surface oxidation.Secondly, entirety aluminium base, upper insulating barrier, circuit-wiring layer, some components, pin, lower insulating barrier and heat sink formed is as in mould, and positions.Finally, note waters sealing resin, and cooling is finally completed encapsulation.Needing pin cut-out molding according to use length after having encapsulated.
Above-mentioned steps S40 can complete before or after any one step between step S10 and step S50, is preferably and carries out with step S10 simultaneously or complete after step slo.
The manufacture method of SPM of the present invention is in the lower insulating barrier of softening state before packaging by using, its mobility can ensure the uniformity between aluminium base and heat sink, again because the thermal conductivity of lower insulating barrier is far above sealing resin, so its THICKNESS CONTROL is not had very strict requirement, significantly reduce the technology difficulty of molding equipment, and without using upper mold thimble, the special constructions such as lower mold clamping device, the most not to wiring during molding, the positions such as component claim, reduce manufacturing cost and the design cost of SPM, improve the yield rate of SPM.
In the above-described embodiments, by the way of transmission mould or injection mould, aluminium base, upper insulating barrier, circuit-wiring layer, some components and pin, and lower insulating barrier are encapsulated.
Fig. 4 be SPM of the present invention manufacture method in form the schematic flow sheet of circuit-wiring layer；
In the above-described embodiments, step S20 specifically includes:
Step S21, copper foil on upper insulating barrier；
Upper surface copper foil at upper insulating barrier.
Step S22, etches Copper Foil, forms circuit-wiring layer.
Etch Copper Foil according to circuit layout, remove etched Copper Foil partly, form circuit-wiring layer.
Schematic flow sheet with reference to another embodiment of manufacture method that Fig. 5, Fig. 5 are SPM of the present invention.
Based on above-described embodiment, also included before step S10:
Step S60, carries out corrosion protection process to the upper and lower surface of aluminium base.
Respectively the upper and lower surface of aluminium base is carried out corrosion protection process, prevent aluminium base to be corroded, to improve the service life of aluminium base.
Fig. 6 is the schematic flow sheet of the another embodiment of manufacture method of SPM of the present invention.
In the above-described embodiments, also included before step S30:
Step S70, preheating aluminium base and circuit-wiring layer.
First, aluminium base and circuit-wiring layer being placed in the plane of a heating and preheat, heating plane temperature can not be the lowest, does not otherwise have the effect of preheating, can not be the highest, and the most welded good stannum otherwise can be made to melt, preferably 100 DEG C.Then, the part that pin prepares to contact with circuit-wiring layer is stained with tin cream, in order to improve welding quality, the most also can be stained with scaling powder, and be placed on appropriate location.
The foregoing is only the preferred embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every equivalent structure transformation utilizing description of the invention and accompanying drawing content to be made; or directly or indirectly it is used in other relevant technical fields, the most in like manner it is included in the scope of patent protection of the present invention.
Claims (10)
1. a SPM, including an aluminium base, this aluminium base upper surface is provided with insulating barrier on,
On this, insulating barrier is provided with a circuit-wiring layer, and this circuit-wiring layer is provided with some components and draws
Foot, it is characterised in that described aluminium base lower surface is provided with insulating barrier, this lower insulating barrier is provided with one
Heat sink, described aluminium base, upper insulating barrier, circuit-wiring layer, some components and pin, and
Lower insulating barrier is encapsulated in sealing resin, and wherein, described pin runs through described sealing resin and to extension
Stretching, the side of described heat sink is encapsulated by described sealing resin, and the lower surface of described heat sink is exposed, institute
The thermal conductivity stating insulating barrier is 2.0W/m k, and the thermal conductivity of described lower insulating barrier is 5.0W/m k.
2. SPM as claimed in claim 1, it is characterised in that described upper insulating barrier uses
Al is filled in epoxide resin material2O3And make.
3. SPM as claimed in claim 1, it is characterised in that described lower insulating barrier uses
In epoxide resin material, fill BN and make.
4. the SPM as described in any one in claims 1 to 3, it is characterised in that also
Including some in described component, foundation electrical connection between circuit-wiring layer, and aluminium base
Metal wire.
5. SPM as claimed in claim 4, it is characterised in that set on described upper insulating barrier
Have at least one for setting up, with circuit-wiring layer or component, the exposed hole electrically connected for described aluminium base.
6. the manufacture method of a SPM, it is characterised in that including:
Upper and lower surface at aluminium base forms insulating barrier and lower insulating barrier respectively；
On described, on insulating barrier, form circuit-wiring layer, and some electricity are installed on described circuit-wiring layer
Circuit component and pin；
Arranging heat sink on described lower insulating barrier, the side of described heat sink is encapsulated by sealing resin, institute
The lower surface stating heat sink is exposed；
Encapsulate described aluminium base, upper insulating barrier, circuit-wiring layer, some components and pin, and
Lower insulating barrier.
7. the manufacture method of SPM as claimed in claim 6, it is characterised in that by passing
The mode passing mould or injection mould encapsulates described aluminium base, upper insulating barrier, circuit-wiring layer, some circuit elements
Part and pin, and lower insulating barrier.
8. the manufacture method of SPM as claimed in claim 7, it is characterised in that described
Also include before the step that the upper and lower surface of aluminium base forms insulating barrier and lower insulating barrier respectively:
The upper and lower surface of described aluminium base is carried out corrosion protection process.
9. the manufacture method of SPM as claimed in claim 8, it is characterised in that described
The step forming circuit-wiring layer on described upper insulating barrier specifically includes:
Copper foil on insulating barrier on described；
Etch described Copper Foil, form described circuit-wiring layer.
10. the manufacture method of SPM as claimed in claim 9, it is characterised in that described
Include before described circuit-wiring layer is installed the step of some components and pin:
Preheat described aluminium base and circuit-wiring layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210576069.XA CN103050470B (en) | 2012-12-26 | 2012-12-26 | SPM and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210576069.XA CN103050470B (en) | 2012-12-26 | 2012-12-26 | SPM and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103050470A CN103050470A (en) | 2013-04-17 |
| CN103050470B true CN103050470B (en) | 2016-08-10 |
Family
ID=48063065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210576069.XA Active CN103050470B (en) | 2012-12-26 | 2012-12-26 | SPM and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103050470B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104112732A (en) * | 2013-08-19 | 2014-10-22 | 广东美的集团芜湖制冷设备有限公司 | Integrated circuit module and manufacturing method thereof |
| CN104112740B (en) * | 2013-09-23 | 2017-02-15 | 广东美的制冷设备有限公司 | Intelligent power module and manufacturing method thereof |
| CN104716128B (en) | 2013-12-16 | 2019-11-22 | 台达电子企业管理（上海）有限公司 | The manufacturing method of power module, supply convertor and power module |
| CN104392943A (en) * | 2014-12-05 | 2015-03-04 | 常州瑞华电力电子器件有限公司 | Preparation method of low-stress high-weldability nickel-plated electrode |
| CN104767417B (en) * | 2015-03-23 | 2018-10-19 | 广东美的制冷设备有限公司 | Control circuit, intelligent power module and its manufacturing method of intelligent power module |
| CN107045990A (en) * | 2017-03-13 | 2017-08-15 | 广东美的制冷设备有限公司 | Circuit module and its manufacture method |
| CN108493166B (en) * | 2018-04-23 | 2019-11-26 | 南通市索新功率电子有限公司 | A kind of power semiconductor modular encapsulating structure and packaging method |
| CN109510562A (en) * | 2019-01-02 | 2019-03-22 | 广东美的暖通设备有限公司 | Power module, air conditioner |
| CN110718470A (en) * | 2019-09-03 | 2020-01-21 | 浙江固驰电子有限公司 | Aluminum substrate aluminum wire bonding process with high reliability and low structural stress |
| CN113088224B (en) * | 2021-02-26 | 2022-11-29 | 广东美的白色家电技术创新中心有限公司 | Protection composition applied to packaging product, power module and preparation method of power module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5767573A (en) * | 1995-10-26 | 1998-06-16 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| CN101901795A (en) * | 2009-05-25 | 2010-12-01 | 三星电机株式会社 | Power semiconductor module |
| CN102473688A (en) * | 2009-09-30 | 2012-05-23 | 株式会社日立制作所 | Insulation circuit board, and power semiconductor device or inverter module using the same |
| CN203232866U (en) * | 2012-12-26 | 2013-10-09 | 广东美的电器股份有限公司 | Intelligent power module |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090103600A (en) * | 2008-03-28 | 2009-10-01 | 페어차일드코리아반도체 주식회사 | Power Device Substrate and Power Device Package Including the Same |
-
2012
- 2012-12-26 CN CN201210576069.XA patent/CN103050470B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5767573A (en) * | 1995-10-26 | 1998-06-16 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| CN101901795A (en) * | 2009-05-25 | 2010-12-01 | 三星电机株式会社 | Power semiconductor module |
| CN102473688A (en) * | 2009-09-30 | 2012-05-23 | 株式会社日立制作所 | Insulation circuit board, and power semiconductor device or inverter module using the same |
| CN203232866U (en) * | 2012-12-26 | 2013-10-09 | 广东美的电器股份有限公司 | Intelligent power module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103050470A (en) | 2013-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103050470B (en) | SPM and preparation method thereof | |
| CN104282641B (en) | Semiconductor device | |
| US11810887B2 (en) | Double-sided cooling type power module and manufacturing method therefor | |
| JP6115738B2 (en) | Semiconductor device and manufacturing method thereof | |
| CN101556941B (en) | Heat radiation structure of surface mounting high-power element | |
| US9716072B2 (en) | Power semiconductor device and method of manufacturing the same | |
| WO2014132803A1 (en) | Power semiconductor device | |
| CN105453256A (en) | Power module | |
| CN103236422B (en) | Intelligent Power Module and manufacture method thereof | |
| CN203232866U (en) | Intelligent power module | |
| CN105684147A (en) | Semiconductor module and method for manufacturing same | |
| CN104637832A (en) | Semiconductor device and manufacturing method thereof | |
| CN104303299A (en) | Method for manufacturing semiconductor device and semiconductor device | |
| CN103715106B (en) | The manufacture method of a kind of SPM and SPM | |
| CN106601691A (en) | Intelligent power module, intelligent power module preparation method, and power electronic equipment | |
| JP6945418B2 (en) | Semiconductor devices and manufacturing methods for semiconductor devices | |
| CN108878377B (en) | Power module, manufacturing method thereof and air conditioner | |
| CN107301979A (en) | SPM and the air conditioner with it | |
| CN202332797U (en) | Semiconductor device | |
| CN101582414A (en) | Power module by directly bonding power terminal | |
| CN104112732A (en) | Integrated circuit module and manufacturing method thereof | |
| JP4492257B2 (en) | Semiconductor module and manufacturing method thereof | |
| CN204947888U (en) | Intelligent power module | |
| CN101621040B (en) | Semiconductor device | |
| CN107546199A (en) | Power model and the method for manufacturing it |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: MIDEA GROUP CO., LTD. Free format text: FORMER OWNER: MEIDI ELECTRIC APPLIANCES CO., LTD., GUANGDONG Effective date: 20131129 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20131129 Address after: 528311 Guangdong, Foshan, Beijiao, the United States, the United States and the United States on the avenue of the United States, the headquarters of the United States building B floor, District, 26-28 Applicant after: Midea Group Co., Ltd. Address before: 528311 Beijiao, Foshan, Shunde District, the town of Guangdong, the United States Avenue, No. 6 Applicant before: Meidi Electric Appliances Co., Ltd., Guangdong |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |