CN104112732A - Integrated circuit module and manufacturing method thereof - Google Patents
Integrated circuit module and manufacturing method thereof Download PDFInfo
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- CN104112732A CN104112732A CN201310362985.8A CN201310362985A CN104112732A CN 104112732 A CN104112732 A CN 104112732A CN 201310362985 A CN201310362985 A CN 201310362985A CN 104112732 A CN104112732 A CN 104112732A
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- wiring layer
- hole
- substrate
- conductive materials
- integrated circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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Abstract
The invention is suitable for the technology of electronic devices, and provides an integrated circuit module and a manufacturing method thereof. The integrated circuit module comprises a substrate of which one surface is covered with an insulating layer; a circuit wiring layer which is formed on the surface of the insulating layer; circuit elements which are arranged at corresponding positions of the circuit wiring layer; and through holes which are arranged in a through way and filled with conductive material by which electric connection of the circuit wiring layer and the substrate is formed. Therefore, combination of the circuit wiring layer and the substrate depends on connection formed by conductive material rather than depend on bonding connection of metal wires so that manufacturing cost and difficulty are saved, connection reliability is enhanced, a necessary area for connection of the substrate and the circuit wiring layer can be reduced, and thus integral miniaturization of the integrated circuit module is realized.
Description
Technical field
The invention belongs to electronic device manufacturing process field, relate in particular to a kind of integrated circuit modules and manufacture method thereof.
Background technology
Intelligent Power Module (Intelligent Power Module, IPM) is a kind of by the power drive series products of power electronics and integrated circuit technique combination.IPM integrates device for power switching and high-voltage driving circuit, and in keep overvoltage, overcurrent and the failure detector circuit such as overheated.IPM receives the control signal of MCU on the one hand, drives subsequent conditioning circuit work, sends the state detection signal of system back to MCU on the other hand.Compared with the discrete scheme of tradition, IPM wins increasing market with advantages such as its high integration, high reliability, be particularly suitable for frequency converter and the various inverter of drive motors, it is frequency control, metallurgical machinery, electric traction, servo-drive, the desirable power electronic device of one of frequency-conversion domestic electric appliances.
A kind of structure of Intelligent Power Module 100 is described with reference to Fig. 1.Fig. 1 (A) is the stereogram of described Intelligent Power Module 100, and Fig. 1 (B) is the X-X line profile of Fig. 1 (A).
Described Intelligent Power Module 100 has following structure, and it comprises: circuit substrate 106; Be located at the wiring 108 forming on the lip-deep insulating barrier 107 of described circuit substrate 106; Be fixed on the circuit element 104 on described wiring 108; Connect the metal wire 105 of described circuit element 104 and described wiring 108; The pin 101 being connected with described wiring 108.The sealed resin 102 of entirety of described Intelligent Power Module 100 seals, and the method for sealing has the injection mould of use thermoplastic resin transfer die molded and use thermosetting resin molded.
The structure of the position of connecting circuit wiring 108 and circuit substrate 106 is described with reference to Fig. 1 (B).By the exposed division 110 by-metal wire 105 connecting circuit substrates 106, carry out the certain electric site of wiring 108 and the connection of circuit substrate 106.Like this, owing to making both current potentials approximate by electrical connection circuit substrate 106 and wiring 108 certain electric sites, therefore can eliminate the harmful effect that circuit noise produces described circuit element 104.
Exposed division 110 is the poroid positions that connect insulating barrier 107 for exposing circuit substrate 106.Exposed division 110 is general uses milling cutter boring to form, therefore with reference to figure 1(C), the bottom 111 of exposed division 110 is matsurface in boring afterwards, if directly nation's line, can cause the cohesive force of metal wire 105 and exposed division 110 very low, determine even if thick lines more than use 200 μ m carries out nation, in long-term use procedure, because the various material coefficients of expansion are not quite similar, also there is the possibility of broken string.With reference to figure 1(D), for guaranteeing the cohesive force of metal wire 105 and exposed division 110, before nation determines metal wire 105, generally first use pressuring flat device 115 that bottom 111 is flattened.
But this way has increased an equipment, and the required precision of the position of the speed of this equipment to the dynamics, the contact that flatten, pressing is very high, the design difficulty of this kind of equipment is large, manufacturing cost is higher, also higher to operator's requirement, make in this way bottom 111 to be processed, the manufacturing cost and the manufacture difficulty that have increased undoubtedly Intelligent Power Module 100, reduced manufacture qualification rate.And this method remains and utilizes the bonding force of metal wire 105 and circuit substrate 106 to fix being connected of metal wire 105 and circuit substrate 106, under bad working environments, use for a long time, still there is the risk of broken string.And, form the method connecting in Different Plane by nation's alignment, nation's alignment needs certain aerial track lengths, so, between wiring 108 certain electric sites and exposed division 110, must maintain a certain distance and can not be too near, the area that this has increased circuit substrate 106 undoubtedly, has further improved the manufacturing cost of Intelligent Power Module 100.
Summary of the invention
The present invention is intended to solve the deficiencies in the prior art, provide a kind of conductive materials that utilizes to make wiring layer form with substrate the integrated circuit modules being electrically connected, can effectively ensure in the long-term use procedure of integrated circuit modules, between the specific potential of wiring layer and substrate, reliably be connected.
The present invention is achieved in that a kind of integrated circuit modules, comprising:
Wherein a surface coverage has the substrate of insulating barrier;
The wiring layer forming in described surface of insulating layer;
Be disposed in the circuit element of described wiring layer relevant position;
The through hole providing, this through hole filling has makes described wiring layer form with described substrate the conductive materials being electrically connected.
The beneficial effect of said integrated circuit module is: because wiring layer no longer relies on metal wire bonding to be connected with the combination of substrate, connect and rely on conductive materials to form, manufacturing cost and difficulty are not only saved, improve connection reliability, and can reduce with the essential regions that wiring layer is connected at substrate, thereby make integrated circuit modules integral miniaturization.
The manufacture method that another object of the present invention is to provide a kind of integrated circuit modules, comprises the following steps:
Make substrate, and in a wherein surface coverage insulating barrier of described substrate;
Lay wiring layer in described surface of insulating layer;
Arrange circuit element in described wiring layer relevant position;
Through hole is set, and filling makes described wiring layer form with described substrate the conductive materials being electrically connected in this through hole.
The manufacture method that another object of the present invention is to provide a kind of integrated circuit modules, comprises the following steps:
Make substrate, and in a wherein surface coverage insulating barrier of described substrate;
Through hole is set, and filling forms with described substrate the conductive materials being electrically connected in this through hole;
Lay the wiring layer of electrical connection in described surface of insulating layer, with described conductive materials;
Arrange circuit element in described wiring layer relevant position.
The manufacture method beneficial effect of said integrated circuit module is: the operation that reduces the metal wire that forms connection substrate and wiring layer, therefore can simplify nation's linear flow journey, and can significantly save the manufacturing cost of Intelligent Power Module, for some streamline, even can reduce the input of nation's line equipment; Because only need inject conductive materials in through hole with simple device, and the requirement of injection rate is comparatively loose, at the bottom of hole, hole wall surface roughness is without particular/special requirement, therefore flatten at the bottom of to hole without the high equipment of design price.
Brief description of the drawings
The plan structure schematic diagram that Fig. 1 (A) is existing Intelligent Power Module;
Fig. 1 (B) is X-X ' the line profile of Fig. 1 (A);
The structural representation that exposes hole site that Fig. 1 (C) is existing Intelligent Power Module;
The operation schematic diagram in hole is exposed in the making of the manufacture method that Fig. 1 (D) is existing Intelligent Power Module;
The vertical view of the Intelligent Power Module that Fig. 2 (A) provides for the embodiment of the present invention;
Fig. 2 (B) is the section plan of Fig. 2 (A);
Fig. 2 (C) is the profile along X-X ' line in the Fig. 2 (A) in one embodiment of the invention;
Fig. 2 (D) is the profile along X-X ' line in the Fig. 2 (A) in another embodiment of the present invention;
Fig. 3 (A), 3(B) be the operation that substrate, insulating barrier and wiring layer are set that first embodiment of the invention provides;
Fig. 4 (A), 4(B) operation that through hole is set that provides for first embodiment of the invention;
Fig. 5 (A), 5(B) operation that arranges circuit element, welding pin and filling conductive materials that provides for first embodiment of the invention;
Fig. 6 (A), 6(B) operation that substrate, insulating barrier and through hole are set that provides for second embodiment of the invention;
The operation at through hole filling conductive materials that Fig. 7 provides for second embodiment of the invention;
Fig. 8 (A), 8(B) operation of the laying wiring layer that provides for second embodiment of the invention;
The operation that circuit element is set that Fig. 9 provides for second embodiment of the invention;
Figure 10 (A), 10(B), 10(C) carry out nation's line connection and matting for what the embodiment of the present invention provided;
Figure 11 (A), 11(B) sealing process that provides for the embodiment of the present invention;
The operation of carrying out pin Trim Molding and testing that Figure 12 provides for the embodiment of the present invention.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
In conjunction with Fig. 2 (A), 2(B), 2(C), 2(D), in one embodiment, integrated circuit modules 10 comprises wiring layer 18 that a surface coverage wherein has the substrate 16 of insulating barrier 17, forms in insulating barrier 16 surfaces, is disposed in the circuit element 14 of wiring layer 18 relevant position and the through hole 20 providing, and this through hole filling has and makes wiring layer 18 form with substrate 16 conductive materials 21 being electrically connected.Each key element that forms integrated circuit modules will be illustrated below.
Substrate 16 is by the aluminium of the materials such as 1100 or 5052 or the rectangular plate that copper forms.Wherein form wiring layer 18 on a surface at substrate 16 and have two kinds with the method for insulating barrier 17: at least one surface that method is corrosion protection treatment substrate 16; Another method is again at its circuit forming surface wiring layer 18 form insulating barrier 17 at least one surface of substrate 16 after.At this, for improving the moisture-proof of integrated circuit modules 10, can utilize the entirety of sealing resin 12 sealed aluminum substrates 16.
Insulating barrier 17 covered substrate 16 at least one surface form, and high concentration is filled the filler raising thermal conductivities such as aluminium oxide in the resin materials such as epoxy resin.
Circuit element 14 is fixed on the circuit that forms regulation on wiring layer 18.Circuit element 14 adopts the passive component such as the active element such as transistor or diode or electric capacity or resistance.In addition, also can the element large caloric values such as power component be fixed on substrate 16 by the radiator of being made by copper etc.At this, according to the design needs of integrated circuit (IC)-components, by utilizing metal wire 15 that wiring layer 18 is connected with the circuit element 14 of installing that faces up.
Further, integrated circuit modules 10 also comprises pin 11, and wiring layer 18 comprises that pin 11 is connected and stretches out from substrate 16 with pin pad 18A near the pin pad 18A of the marginal surface of substrate 16.Wiring layer 18 is made up of metals such as copper and insulate with substrate 16.At this, the pad 18A that multiple alignings are arranged is set near one side of substrate 16, in addition, wiring layer 18 is insulated layer 17 and is bonded on the surface of substrate 16.
In one embodiment, with reference to figure 2(C), through hole 20 connects insulating barrier 17, and conductive materials 21 is clogged in through hole 20, and conductive materials 21 is contacted with wiring layer 18 with substrate 16.In the present embodiment, through hole 20, between substrate 16 and wiring layer 18, and is clogged in conductive materials wherein and is formed and be electrically connected with substrate 16 and wiring layer 18.
In another embodiment, with reference to figure 2(D), through hole 20 connects insulating barrier 17 and penetrates wiring layer 18, is useful on the conductive materials 21 of electrical connection wiring layer 18 and substrate 16 in these through hole 20 fillings.In the present embodiment, through hole 20 connects insulating barrier 17 and is positioned at the wiring layer 18 of substrate 16 and ad-hoc location, and clogs in conductive materials 21 wherein and form and be electrically connected with substrate 16 and wiring layer 18, around the aperture of through hole 20, have wiring layer 18 around.
By through hole 20 is set, make wiring layer 18 form specific potential, this specific potential is generally earth potential, and the bottom of through hole 20 and hole wall can be more coarse, and can allow remainingly in through hole 20 has a small amount of aluminium bits,
Conductive materials 21 heating cooling after coagulations, form the electric conductor with wiring layer 18 and substrate 16 close contacts.Conductive materials 21 can be tin cream, elargol etc., for cost control, generally select low temperature tin cream, tin cream is wanted more than 90% space of filler opening 20, and guarantee to touch bottom and the aperture wiring layer 18 around in hole 20, if there is aluminium or copper scale in through hole 20, guarantee to be fixed by tin cream.
Pin 11 is fixed on the described pad 18A that is located at substrate 16 at least one edge, and it has the effect of for example inputting, exporting with outside.At this, be provided with many pins 11 at least on one side, pin 11 and pad 18A are by the electrical binding agent bonding of the conductions such as scolding tin.
Sealant 12 can use the molded injection mould mode that also can use of thermosetting resin to use thermoplastic resin molded by transfer die mode.At this, sealant 12 can be resin, and its complete sealed aluminum substrate 16 has all elements in the one side of wiring layer 18, and substrate 16 does not have the one side of circuit layer of cloth 18 not by sealed; For the performance of integrated circuit modules 10, extremely stability is better in addition, its each surface all can be sealed with resin.
With reference to Fig. 2 (A), 2(B), 2(C) and 2(D), on the surface of substrate 16, form the wiring layer 18 insulating by insulating barrier 17 and substrate 16.Form desirable circuit by the appropriate location configuration circuit element 14 at wiring layer 18.In addition, in order to suppress parasitic capacitance and the circuit noise between wiring layer 18 and substrate 16, with conductive materials 21 by running through through hole 20 connecting circuit wiring layers 18 and substrate 16.Like this, because the current potential by both connections being made to wiring layer 18 and substrate 16 is approximate, therefore can make parasitic capacitance and circuit noise be reduced.For example, can adopt the earth potential connection substrate 16 of wiring layer 18, make the current potential of substrate 16 be similar to earth potential.In addition, on substrate 16, be provided with a through hole 20, but also can form multiple through holes 20.
With reference to Fig. 2 (C), 2(D), near the structure that through hole 20 is is described.Through hole 20 can just connect insulating barrier 17, and the hole portion that wiring layer 18 and substrate 16 parts are exposed, as shown in Fig. 2 (C).Also can be to connect wiring layer 18, insulating barrier 17 and hole portion that substrate 16 parts are exposed, as shown in Fig. 2 (D); For the metal part that substrate 16 and wiring layer 18 conduct electricity is exposed, and by larger than the thickness of insulating barrier 17 degree of depth formation of through hole 20, need to make wiring layer 18 cave in or penetrate, substrate 16 caves in.For making conductive materials 21 can touch wiring layer 18, through hole 20 upper surfaces or aperture need to leave this specific potential as earthy wiring layer 18 around, if the aperture of through hole 20 is 0.5mm, before formation through hole 20, the diameter of wiring layer 18 herein need to be greater than 0.7mm so.In the time using milling cutter to form through hole 20, the bottom surface 20A(of through hole 20 is positioned on substrate 16) formation matsurface.
With reference to figure 2(D), in through hole 20, inject flowable state conductive materials 21, conductive materials 21 can be tin cream etc., guarantee to be injected into the bottom of through hole 20 and overflow from the aperture of through hole 20, on the wiring layer 18 around the aperture of through hole 20, form and apply, in the inside of through hole 20, tin cream at least can filler opening in space 90%.At this, because integrated circuit modules 10 still has heating process after injection flowable state conductive materials 21, conductive materials 21 can become gradually solid-state in above-mentioned heating process.
In addition, refer again to Fig. 2 (D), in the present embodiment, owing to considering and the operation compatibility that forms circuit element 14, use the cost tin cream limited compared with lazy flow, so the diameter of suggestion through hole 20 is not less than 0.5mm, guaranteed that tin cream can form abundant filling (more than 90%) to hole by the operation of paste solder printing, if use the better material of mobility, aperture can further dwindle.
Said integrated circuit module 10 is passed through different structure in two, rely on conductive materials 21 to form being electrically connected of specific potential of connecting circuit wiring layer 18 and substrate 16, manufacturing cost and difficulty are not only saved, improve connection reliability, and can reduce with the essential regions that wiring layer 18 is connected at substrate 16, thereby make integrated circuit modules 18 integral miniaturization.
In addition,, in conjunction with Fig. 3 to 5, also provide two kinds of manufacture methods that can make said integrated circuit module 10.
The manufacture method of the first integrated circuit modules comprises the following steps:
Make substrate 16, and in a wherein surface coverage insulating barrier 17 of substrate 16; Lay wiring layer 18 in described insulating barrier 17 surfaces; Arrange circuit element 14 in described wiring layer 18 relevant position; Through hole 20 is set, and makes described wiring layer 18 form with described substrate 16 conductive materials 21 being electrically connected in the interior filling of this through hole 20.
Further, the described through hole 20 that arranges, makes described wiring layer 18 with the step that described substrate 16 forms the conductive materials 21 being electrically connected be in these through hole 20 fillings: the through hole 20 connecting at described insulating barrier 17 and described wiring layer 18 is set; And clog at this through hole 20 the described conductive materials 21 all contacting with described wiring layer 18 with described substrate 16; Then described conductive materials 21 heated and make it cooling after coagulation, forming the electric conductor with described wiring layer 18 and described substrate 16 close contacts.
In the present embodiment, below in conjunction with the details of each operation of brief description of the drawings.
The first operation: with reference to Fig. 3, this operation is to form insulating barrier 17 operation at insulating barrier 17 circuit forming surface wiring layers 18 on sizeable substrate 16.
First, with reference to profile Fig. 3 (B) of the X-X' section of Fig. 3 (A) and Fig. 3 (A), circuit layout is as required prepared sizeable substrate 16, can choose the size of 64mm × 30mm for general integrated circuit modules 10, and corrosion protection processing is carried out on two sides.On the surface at least simultaneously of substrate 16, be provided with insulating barrier 17.In addition, be pasted with the Copper Foil as conductive pattern on the surface of insulating barrier 17.Then the Copper Foil of this operation manufacture is carried out to etching, remove partly Copper Foil, form wiring layer 18.
At this, the formation of sizeable substrate 16 can be carried out the mode such as die-cut by the directly aluminium to 1m × 1m or copper material and form, and also can form V groove by the aluminium of first 1m × 1m or copper material, and the mode of then shearing forms.
The second operation: with reference to Fig. 4, in this operation, on wiring layer 18 and insulating barrier 17, through hole 20 is set.
Formation with reference to vertical view Fig. 4 (A) and end view Fig. 4 (B) through hole 20 can be passed through for example milling cutter of the smooth formation of front end, as vertical sharp tackle.Transfer to form through hole 20 by making this milling cutter high-speed rotary.Because aluminium or copper are the sticking metals of tool, therefore matsurface 20A is formed on the bottom of the through hole 20 forming.In addition, the position of through hole 20 is selected upper, should select on wiring layer 18 for example, will to serve as the earthy ad-hoc location of integrated circuit modules 10, and by forming through hole 20, wiring layer 18 and insulating barrier 17 are connected.
Insulating barrier 17 is owing to containing the inorganic fillers such as aluminium oxide, therefore be very firm.The wearing and tearing of the milling cutter that therefore, formation through hole 20 causes are very fast.These wearing and tearing are more to use the drill bit that diameter is little more remarkable, and consider and ensure that conductive materials 21 can fully fill, and in when batch production, preferably use the milling cutter that diameter is thicker; In addition, in the time considering the miniaturization of substrate 16, preferably the diameter of milling cutter is reduced, to reduce the area of through hole 20.Therefore, preferably use the milling cutter that diameter is Φ 0.5mm to form through hole 20.According to this diameter, can be at the area that reduces to a certain degree through hole 20 and occupy, thus the degree of wear that can control milling cutter simultaneously improves productivity.
The 3rd operation: with reference to Fig. 5, this operation is to apply tin cream filling vias 20, mounting circuit element 14 and pin 11 on wiring layer 18.
First, with reference to vertical view Fig. 5 (A) and end view Fig. 5 (B), by the steel mesh of specific perforate, apply the scolders such as scolding tin, make the ad-hoc location formation on wiring layer 18 there is the tin paste layer of certain fluidity, and in through hole 20, be formed with tin cream post, be conductive materials 21, steel mesh is greater than aperture in the perforate of through hole 20 positions, so conductive materials 21 except having filled through hole 20, is also applied on through hole 20 wiring layer 18 around.If a small amount of aluminium bits that form in through hole 20 in the second operation, also will be surrounded by conductive materials 21.Conductive materials 21 is to form by forming the same mode of tin paste layer in wiring layer 18 other position, does not therefore increase operation.
Then, on carrier 13, place holder tool 9, circuit element 14 is placed on the ad-hoc location of wiring layer 18, and one end of pin 11 will be placed on pin pad 18A, the other end is fixed by holder tool 9, and carrier 13 and holder tool 9 are made by materials such as synthetic stones;
Finally, be put in substrate 16 on carrier 13 and holder tool 9 by Reflow Soldering, after tin cream solidifies, circuit element 14, pin 11 are fixed, and conductive materials 21 is curing, and the ad-hoc location of substrate 16 and wiring layer 18 has formed fixing electrical connection.
In addition, the manufacture method of the second integrated circuit modules comprises the following steps:
Make substrate 16, and in a wherein surface coverage insulating barrier 17 of described substrate 16; Through hole 20 is set, and forms with described substrate 16 conductive materials 21 being electrically connected in the interior filling of this through hole 20; Lay the wiring layer 18 of electrical connection in described insulating barrier 17 surfaces, with described conductive materials 21; Arrange circuit element 14 in described wiring layer 18 relevant position.
Further, the interior filling of through hole 20 of setting with the step that described substrate 16 forms the conductive materials 21 being electrically connected is: at described insulating barrier 17, described through hole 20 is set; And clog at this through hole 20 the described conductive materials 21 all contacting with described wiring layer 18 with described substrate 16; Then described conductive materials 21 heated and make it cooled and solidified, forming the electric conductor with described wiring layer 18 and described substrate 16 close contacts.
In the present embodiment, below in conjunction with the details of each operation of brief description of the drawings.
The first operation: with reference to Fig. 6, this operation is to form insulating barrier 17 and at insulating barrier 17, through hole 20 operations are set on sizeable substrate 16.
First, with reference to profile Fig. 6 (B) of the X-X' section of Fig. 6 (B) and Fig. 6 (A), circuit layout is as required prepared sizeable substrate 16, can choose the size of 64mm × 30mm for general integrated circuit modules 10, and corrosion protection processing is carried out on two sides.On the surface at least simultaneously of substrate 16, be provided with insulating barrier 17.At this, the formation of sizeable substrate 16 can be carried out the mode such as die-cut by the directly aluminium to 1m × 1m or copper material and form, and also can form V groove by the aluminium of first 1m × 1m or copper material, and the mode of then shearing forms.
Then, can pass through for example milling cutter of the smooth formation of front end with reference to the formation of vertical view Fig. 6 (B) through hole 20, as vertical sharp tackle, carry out.Transfer to form through hole 20 by making this milling cutter high-speed rotary.Because aluminium is the sticking metal of tool, therefore matsurface 20A is formed on the bottom of the through hole 20 forming.In addition, the position of through hole 20 is selected upper, should select with wiring layer 18 on, as the earthy ad-hoc location of integrated circuit modules 10.
Insulating barrier 17 is owing to containing the inorganic fillers such as aluminium oxide, therefore be very firm.The wearing and tearing of the milling cutter that therefore, formation through hole 20 causes are very fast.These wearing and tearing are more to use the drill bit that diameter is little more remarkable, and consider and ensure that conductive materials 21 can fully fill, and in when batch production, preferably use the milling cutter that diameter is thicker; In addition, in the time considering the miniaturization of substrate 16, preferably the diameter of milling cutter is reduced, to reduce the area of through hole 20.Therefore, preferably use the milling cutter that diameter is Φ 0.5mm to form through hole 20.According to this diameter, can be at the area that reduces to a certain degree through hole 20 and occupy, thus the degree of wear that can control milling cutter simultaneously improves productivity.
The 3rd operation: with reference to Fig. 7-9, this operation is to apply tin cream filling vias 20 on wiring layer 18, the mounting circuit element 14 of circuit forming surface wiring layer 18 and the operation of pin 11.
First, with reference to end view Fig. 7, by the steel mesh of specific perforate, apply the scolders such as scolding tin, make the ad-hoc location formation on insulating barrier 17 there is the tin paste layer of certain fluidity, and in through hole 20, be formed with tin cream post, be described conductive materials 21, steel mesh is greater than aperture in the perforate of through hole 20 positions, so conductive materials 21 except having filled through hole 20, is also applied on through hole 20 insulating barrier 17 around.The a small amount of aluminium bits that form in through hole 20 in the second operation, are also surrounded by conductive materials 21.
Then,, with reference to vertical view Fig. 8 (A) and end view Fig. 8 (B), be pasted with the Copper Foil as conductive pattern on the surface of insulating barrier 17.Then the Copper Foil of this operation manufacture is carried out to etching, remove partly Copper Foil, form wiring layer 18.Conductive materials 21 is to form by forming the same mode of tin paste layer in wiring layer 18 other position, does not therefore increase operation.
Then with reference to figure 9, on carrier 13, place holder tool 9, circuit element 14 is placed on the ad-hoc location of wiring layer 18, and one end of pin 11 will be placed on pin pad 18A, the other end is fixed by holder tool 9, and carrier 13 and holder tool 9 are made by materials such as synthetic stones;
Finally, be put in substrate 16 on carrier 13 and holder tool 9 by Reflow Soldering, tin cream solidifies, and circuit element 1414, pin 11 are fixed, and conductive materials 21 is curing, and the ad-hoc location of substrate 16 and wiring layer 18 has formed fixing electrical connection.
Understandably, except above-mentioned operation, also comprise following operation in the technological process of making integrated circuit modules,
The 4th operation: with reference to Figure 10 (A), 10(B), 10(C), this operation is to clean described circuit substrate 16 carry out nation's line connection, makes described circuit element 14 and described wiring layer 18 form the operation of the metal wire 15 of the connection function that electrifies.
First substrate 16 being put into cleaning machine cleans, during by Reflow Soldering, the foreign matter such as residual aluminum steel is cleaned when the scaling powder such as residual rosin and punching press, the density of arranging according to circuit element 14 at wiring layer 18, cleaning can be undertaken by the form of spray or ultrasonic or both combinations.
Secondly, with reference to vertical view Figure 10 (A) and end view Figure 10 (B), 10(C), Figure 10 (B), 10(C) be respectively the schematic diagram that the nation's line that carries out circuit element 14 and wiring layer 18 of two different manufacture methods is connected.
The 5th operation: with reference to Figure 11 (A), 11(B), the operation of sealant 12 potted circuit substrates 16.Figure 11 represents to use the profile of mould 50 by the operation of sealant 12 potted circuit substrates 16.
First, in oxygen-free environment, circuit substrate 16 is toasted, baking time should not be less than 2 hours, 125 DEG C of baking temperature and selections.
Substrate 16 conveyances that configure pin 11 are arrived to model 44 and 45.Contact with fixture 46 by the specific part that makes pin 11, carry out the location of substrate 16.
When matched moulds, in the die cavity that is formed at mould 50 inside, place circuit substrate 16, then inject sealing resin by cast gate 53.The method sealing can adopt and use the transfer die injection mould molded or use thermosetting resin of thermosetting resin molded.And the gas of the corresponding sealing resin die cavity inside of injecting from cast gate 53 is discharged into outside by exhaust outlet 54.
The 6th operation: with reference to Figure 12, the operation of carrying out pin 11 Trim Moldings and testing, above-mentioned integrated circuit modules 10 completes as goods through operation thus.
Be that transfer die mould dress operation makes all sealed layer 12 sealings of other parts except pin 11 in front operation.This operation, according to the length and the shape needs that use, for example, cuts into definite shape in the position of dotted line 51 by external pin 11, is convenient to follow-up assembling.
Then module is put into testing equipment, carry out conventional electric parameters testing, generally comprise the test events such as dielectric voltage withstand, quiescent dissipation, delay time, test passes person is finished product.
Utilize above-mentioned operation, complete the integrated circuit modules 10 shown in Fig. 2, wherein, above-mentioned integrated circuit modules 10 can be Intelligent Power Module (IPM).
The manufacture method of above-mentioned two kinds of integrated circuit modules forms the operation of the metal wire of connection substrate 16 and wiring layer 18 by minimizing, therefore can simplify nation's linear flow journey, and the manufacturing cost that can significantly save integrated circuit modules 10, for some streamline, even can reduce the input of nation's line equipment; Because only need inject conductive materials 21 in through hole with simple device, and the requirement of injection rate is comparatively loose, to 20A, hole wall surface roughness at the bottom of the hole of through hole 20 without particular/special requirement, therefore without the high equipment of design price to hole at the bottom of 20A flatten.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (11)
1. an integrated circuit modules, is characterized in that, comprising:
Wherein a surface coverage has the substrate of insulating barrier;
The wiring layer forming in described surface of insulating layer;
Be disposed in the circuit element of described wiring layer relevant position;
The through hole providing, this through hole filling has makes described wiring layer form with described substrate the conductive materials being electrically connected.
2. integrated circuit modules as claimed in claim 1, is characterized in that, described through hole connects described insulating barrier, and described conductive materials is clogged in described through hole and made it and contacts with described wiring layer with described substrate.
3. integrated circuit modules as claimed in claim 1 or 2, is characterized in that, described through hole connects described insulating barrier and penetrates described wiring layer, is useful on the conductive materials of the described wiring layer of electrical connection and described substrate in this through hole filling.
4. integrated circuit modules as claimed in claim 3, is characterized in that, described conductive materials heating cooling after coagulation, form the electric conductor with described wiring layer and described substrate close contact.
5. integrated circuit modules as claimed in claim 1 or 2, is characterized in that, also comprises pin, and described wiring layer comprises that described pin is connected and stretches out from described substrate with described pin pad near the pin pad of the marginal surface of described substrate.
6. integrated circuit modules as claimed in claim 1 or 2, is characterized in that, also comprises sealant, and described sealant is coated on the described surface of described substrate.
7. integrated circuit modules as claimed in claim 1 or 2, is characterized in that, also comprises the metal wire that connects described wiring layer and described circuit element.
8. a manufacture method for integrated circuit modules, is characterized in that, comprises the following steps:
Make substrate, and in a wherein surface coverage insulating barrier of described substrate;
Lay wiring layer in described surface of insulating layer;
Arrange circuit element in described wiring layer relevant position;
Through hole is set, and filling makes described wiring layer form with described substrate the conductive materials being electrically connected in this through hole.
9. the manufacture method of integrated circuit modules as claimed in claim 8, is characterized in that, the described through hole that arranges makes described wiring layer with the step that described substrate forms the conductive materials being electrically connected be in this through hole filling:
The through hole connecting at described insulating barrier and described wiring layer is set; And clog the described conductive materials all contacting with described wiring layer with described substrate at this through hole; Then described conductive materials heated and make it cooling after coagulation, forming the electric conductor with described wiring layer and described substrate close contact.
10. a manufacture method for integrated circuit modules, is characterized in that, comprises the following steps:
Make substrate, and in a wherein surface coverage insulating barrier of described substrate;
Through hole is set, and filling forms with described substrate the conductive materials being electrically connected in this through hole;
Lay the wiring layer of electrical connection in described surface of insulating layer, with described conductive materials;
Arrange circuit element in described wiring layer relevant position.
The manufacture method of 11. integrated circuit modules as claimed in claim 10, is characterized in that, in the through hole of setting, filling with the step that described substrate forms the conductive materials being electrically connected is: at described insulating barrier, described through hole is set; And clog the described conductive materials all contacting with described wiring layer with described substrate at this through hole; Then described conductive materials heated and make it cooled and solidified, forming the electric conductor with described wiring layer and described substrate close contact.
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| CN201310362985.8A CN104112732A (en) | 2013-08-19 | 2013-08-19 | Integrated circuit module and manufacturing method thereof |
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| CN201310362985.8A CN104112732A (en) | 2013-08-19 | 2013-08-19 | Integrated circuit module and manufacturing method thereof |
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