CN219917162U

CN219917162U - Power module

Info

Publication number: CN219917162U
Application number: CN202320283677.5U
Authority: CN
Inventors: 林曦
Original assignee: Meiken Semiconductor Technology Co ltd
Current assignee: Meiken Semiconductor Technology Co ltd
Priority date: 2023-02-21
Filing date: 2023-02-21
Publication date: 2023-10-27
Anticipated expiration: 2033-02-21

Abstract

The utility model discloses a power module, which comprises: the substrate is provided with a first conductive circuit; the chip is arranged on the substrate and is connected with the first conductive circuit in a welding way; the insulating layer covers the chip and the substrate, and is provided with a first wiring channel extending towards the chip; the second conductive circuit is positioned on one side of the insulating layer, which is away from the first conductive circuit, and is electrically connected with the chip through the first conductive metal piece filled in the first wiring channel. The power module provided by the utility model replaces the bonding aluminum wire in the related technology by the second conductive circuit and the first conductive metal piece, so that the parasitic inductance of the system is effectively reduced.

Description

Power module

Technical Field

The utility model relates to the technical field of semiconductor packaging, in particular to a power module.

Background

In the related art power module packaging structure, a power chip for executing a circuit switching function is mounted on a substrate for bearing the chip, the surface of the chip is connected with a circuit or other components through bonding aluminum wires, and then the whole module is packaged by plastic package or insulating gel encapsulation through insulating resin.

Along with the development of the technical trend of the power module toward high power density and high frequency, higher requirements are put forward on the working efficiency and reliability of the power module, but the bonding aluminum wire in the packaging structure of the power module in the related art has the limitation of self performance, such as parasitic inductance of the bonding aluminum wire, so that the energy conversion efficiency under high frequency is seriously affected, the bonding aluminum wire becomes a weak point of the whole power module, and the development of the power module toward high power density and high frequency application is restricted.

Disclosure of Invention

The present utility model aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present utility model is to provide a power module, which replaces the bonding aluminum wire in the related art with the second conductive circuit and the first conductive metal piece, thereby forming a highly flattened package structure, which can effectively reduce the parasitic inductance of the system, and simultaneously, the second conductive circuit formed by the structure can be provided with other components, so as to realize the integration of the power module in the vertical direction and improve the power density of the system.

According to an embodiment of the utility model, a power module includes: the substrate is provided with a first conductive circuit; the chip is arranged on the substrate and is connected with the first conductive circuit in a welding way; the insulating layer covers the chip and the substrate, and is provided with a first wiring channel extending towards the chip; the second conductive circuit is positioned on one side of the insulating layer, which is away from the first conductive circuit, and is electrically connected with the chip through the first conductive metal piece filled in the first wiring channel.

According to the power module provided by the embodiment of the utility model, the bonding aluminum wire in the related technology is replaced by the second conductive circuit and the first conductive metal piece, so that a highly flattened packaging structure is formed, and the chip can be electrically connected with other components or the first conductive circuit through the first conductive metal piece and the second conductive circuit, so that the parasitic inductance of the whole power module is effectively reduced; other components can be mounted on the second conductive line, integration of the power module in the vertical direction is achieved, and power density of the system is improved.

In some embodiments, the first conductive metal piece is a copper material piece.

In some embodiments, the power module is configured such that a current flow direction of at least a portion of the first conductive trace is opposite to a current flow direction of at least a portion of the second conductive trace.

In some embodiments, the plurality of first conductive lines are provided, each first conductive line is provided with at least one chip, the insulating layer covers the plurality of first conductive lines, the insulating layer is further provided with a second routing channel, and a second conductive metal part electrically connected with the second conductive line is filled in the second routing channel, wherein a part of the first conductive lines are electrically connected with the second conductive metal part.

In some embodiments, the second conductive metal piece is a copper material piece.

In some embodiments, an electronic component is mounted on a side of the second conductive trace facing away from the insulating layer.

In some embodiments, a layer of the substrate facing away from the first conductive line is provided with a first heat sink; and/or a second heat dissipation piece is arranged on one side of the second conductive circuit, which is away from the insulating layer.

Additional aspects and advantages of the utility model will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the utility model.

Drawings

The foregoing and/or additional aspects and advantages of the utility model will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:

fig. 1 is a schematic diagram of a power module according to an embodiment of the present utility model;

fig. 2 is a process flow diagram of a method of manufacturing a power module according to an embodiment of the utility model.

Reference numerals: 100. a power module; 1. a substrate; 11. a first conductive line; 2. a chip; 21. an intermetallic compound; 3. an insulating layer; 31. a first routing channel; 32. a second wiring channel; 34. a first layer portion; 35. a second layer portion; 4. a conductive layer; 41. a second conductive line; 5. solder; 6. a first conductive metal member; 7. and a second conductive metal member.

Detailed Description

Embodiments of the present utility model are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the utility model.

In the related art package structure of the power module 100, a power chip 2 performing a circuit switching function is mounted on a substrate 1 carrying the chip 2, the surface of the chip 2 is connected with a circuit or other components through bonding aluminum wires, and then the whole module is encapsulated by using insulating resin or insulating gel encapsulation to complete the encapsulation.

Along with the development of the power module 100 in the high power density and high frequency direction, the higher requirements are put on the working efficiency and reliability of the power module 100, but the bonding aluminum wire in the packaging structure of the power module 100 in the related art will become the weak point of the whole power module 100 due to the limitation of the performance of the bonding aluminum wire, so as to restrict the development of the power module 100 in the high power density and high frequency application. For example, parasitic inductance of the bonding aluminum wire itself seriously affects energy conversion efficiency at high frequency; the poor fatigue resistance of aluminum wires at high temperature and large amplitude temperature cycles can become a limiting factor for the reliability and service life of the module. Accordingly, the present utility model proposes a power module 100, which aims to solve at least one of the above technical problems.

A power module 100 according to an embodiment of the present utility model is described below with reference to fig. 1-2.

Referring to fig. 1 and 2, a power module 100 according to an embodiment of the present utility model includes: a substrate 1, a chip 2, an insulating layer 3 and a second conductive trace 41. The substrate 1 is an insulating material piece, and a first conductive circuit 11 is arranged on the substrate 1; the chip 2 is arranged on the substrate 1 and is connected with the first conductive circuit 11 in a welding way, so that the reliability of the connection between the chip 2 and the first conductive circuit 11 is ensured, and the electrical connection between the chip 2 and the first conductive circuit 11 is realized; the insulating layer 3 covers the chip 2 and the substrate 1, the insulating layer 3 is provided with a first routing channel 31 extending towards the chip 2, the second conductive line 41 is located on one side of the insulating layer 3 away from the first conductive line 11, and the second conductive line 41 is electrically connected with the chip 2 through the first conductive metal piece 6 filled in the first routing channel 31. The insulating layer 3 is mainly used for providing electrical insulation protection among the chip 2, the first conductive line 11 and the second conductive line 41, and the insulating layer 3 is also used for providing mechanical support for the second conductive line 41.

According to the power module 100 of the embodiment of the utility model, the second conductive circuit 41 and the first conductive metal piece 6 replace bonding aluminum wires in the related art to form a highly flattened packaging structure, and the chip 2 can be electrically connected with other components or the first conductive circuit 11 through the first conductive metal piece 6 and the second conductive circuit 41, so that the parasitic inductance of the whole power module 100 is effectively reduced; other components can be mounted on the second conductive circuit 41, so that integration of the power module 100 in the vertical direction is realized, and the power density of the system is improved.

In some embodiments, the substrate 1 may be a ceramic substrate 1 made of Al2O3, alN, si3N4, etc., the chip 2 may be a chip 2 such as an IGBT (Insulated Gate Bipolar Transistor ), a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal Oxide semiconductor field effect transistor), an FRD (Fast Recovery Diode ), an SBD (Schottky Barrier Diode, schottky barrier diode), etc., and the insulating layer 3 may be an insulating resin layer.

In some embodiments, the insulating layer 3 is configured as a piece of semi-cured insulating resin material having a glass transition temperature Tg of 170 ℃ or more. When the power module 100 works, the insulating layer 3 can adapt to the heat generated by the chip 2, and the working stability of the insulating layer 3 is improved.

In some embodiments, the first conductive trace 11 and the second conductive trace 41 are each a piece of copper material. Because the copper material has better conductivity and better fatigue resistance, the possibility of breaking the first conductive line 11 and the second conductive line 41 is reduced, and the reliability of the power module 100 is effectively enhanced.

In some embodiments, the die 2 is mounted to the first conductive trace 11 by soldering or sintering with solder 5 or a sintered silver paste. During the mounting of the chip 2 to the first conductive trace 11, the solder 5 or the sintered silver paste forms a stable intermetallic compound 21 with the back gold at the bottom of the chip 2 under high temperature conditions, thereby firmly adhering the chip 2 to the first conductive trace 11.

In some embodiments, the first conductive metal 6 is a copper material. Because the copper material piece has good conductivity and good fatigue resistance, the possibility of fracture of the first conductive metal piece 6 is reduced, and the reliability of the power module 100 is effectively enhanced; meanwhile, the first conductive metal piece 6 can be also used for conducting heat energy generated during the operation of the chip 2 to the second conductive circuit 41, and radiating heat through the second conductive circuit 41 effectively improves the radiating efficiency of the chip 2.

In some embodiments, the power module 100 is configured such that the current flow direction of at least a portion of the first conductive traces 11 is opposite to the current flow direction of at least a portion of the second conductive traces 41.

By the technical scheme, because the mutual inductance of the conductors with opposite current directions is negative, the mutual inductance is shown to reduce the overall inductance. And the closer the distance between the two conductors is, the larger the mutual inductance value is. In the embodiment of the utility model, the current flow of at least a part of the first conductive line 11 is opposite to the current flow of at least a part of the second conductive line 41, so that mutual inductance is generated between the first conductive line 11 and the second conductive line 41, and the parasitic inductance is eliminated by using the mutual inductance, thereby reducing the parasitic inductance of the whole power module 100.

In some embodiments, the first conductive traces 11 are plural, each first conductive trace 11 is provided with at least one chip 2, the insulating layer 3 covers the plural first conductive traces 11 and chips 2, the insulating layer 3 is further provided with a second routing channel 32, and the second routing channel 32 is filled with a second conductive metal piece 7 electrically connected to the second conductive trace 41, wherein a part of the first conductive traces 11 are electrically connected to the second conductive metal piece 7. That is, a part of the first conductive trace 11 is electrically connected to the second conductive trace 41 through the second conductive metal member 7. That is, the current can flow to the corresponding chip 2 through one first conductive line 11, then flow to the second conductive line 41 from the surface of the chip 2 through the first conductive metal piece 6, and the current in the second conductive line 41 can also flow to the other first conductive lines 11 through the second conductive metal piece 7, so that the communication among a plurality of first conductive lines 11 is realized.

In some embodiments, the first conductive lines 11 are plural, and each first conductive line 11 is provided with at least one chip 2, where a part of the chips 2 are upper bridge chips 2 and another part of the chips 2 are lower bridge chips 2. One of the plurality of first conductive traces 11 is provided with an input terminal Vin, and the second conductive trace 41 is provided with an output terminal Vout and a ground terminal GND. In operation of the power module 100, current is input from the input terminal Vin to a first conductive trace 11 and connected to the upper bridge chip 2 on the first conductive trace 11, then current flows from the upper bridge chip 2 to the second conductive trace 41 through the first conductive metal piece 6, the second conductive trace 41 is connected to a load through the output terminal Vout, and simultaneously, current in the second conductive trace 41 also flows through the second conductive metal piece 7 to the first conductive trace 11 on which the lower bridge chip 2 is mounted and flows to the lower bridge chip 2, and then from the surface of the lower bridge chip 2 to the second conductive trace 41 through the first conductive metal piece 6 and connected to the load through the ground terminal GND.

In some embodiments, the second conductive metal piece 7 is a copper material piece. Because the copper material piece has better conductive performance and better fatigue resistance, the possibility of fracture of the second conductive metal piece 7 is reduced, and the reliability of the power module 100 is effectively enhanced.

In some embodiments, the side of the second conductive track 41 facing away from the insulating layer 3 is provided with electronic components. Integration in the vertical direction of the power module 100 is achieved, and system power density is improved.

In some embodiments, a side of the substrate 1 facing away from the first conductive trace 11 is provided with a first heat sink; and/or the side of the second conductive track 41 facing away from the insulating layer 3 is provided with a second heat sink. That is, in some embodiments, only the side of the substrate 1 facing away from the first conductive trace 11 is provided with the first heat sink; in still other embodiments, the side of the substrate 1 facing away from the first conductive line 11 is provided with a first heat dissipation element, and the side of the second conductive line 41 facing away from the insulating layer 3 is also provided with a second heat dissipation element.

It should be understood that the first heat sink and the second heat sink may be heat sinks such as heat sink fins, heat sink fans, or structural members having a cooling fluid flowing therein.

Referring now to fig. 1 and 2, a power module 100 in accordance with some embodiments of the present utility model is described.

The power module 100 according to an embodiment of the present utility model includes: a substrate 1, a chip 2, an insulating layer 3 and a second conductive trace 41. The substrate 1 is an insulating material piece, and a first conductive circuit 11 is arranged on the substrate 1; the chip 2 is arranged on the substrate 1 and is connected with the first conductive circuit 11 in a welding way; the insulating layer 3 covers the chip 2 and the substrate 1, the insulating layer 3 is provided with a first routing channel 31 extending towards the chip 2, the second conductive line 41 is located on one side of the insulating layer 3 away from the first conductive line 11, and the second conductive line 41 is electrically connected with the chip 2 through the first conductive metal piece 6 filled in the first routing channel 31.

The substrate 1 is a ceramic substrate 1 made of Al2O3, the chip 2 is an IGBT chip 2, and the insulating layer 3 is a semi-solidified insulating resin material with a glass transition temperature Tg of more than or equal to 170 ℃.

The power module 100 is configured such that the current flow of at least a portion of the first conductive traces 11 is opposite to the current flow of at least a portion of the second conductive traces 41.

The chip 2 is mounted on the first conductive trace 11 by soldering or sintering at high temperature with solder 5 or sintered silver paste. During the mounting of the chip 2 to the first conductive trace 11, the solder 5 or the sintered silver paste forms a stable intermetallic compound 21 with the back gold at the bottom of the chip 2 at high temperature, thereby firmly adhering the chip 2 to the first conductive trace 11

The number of the first conductive lines 11 is multiple, each first conductive line 11 is provided with at least one chip 2, the insulating layer 3 covers the multiple first conductive lines 11 and the chips 2, the insulating layer 3 is further provided with a second wiring channel 32, the second wiring channel 32 is filled with a second conductive metal piece 7 electrically connected with the second conductive line 41, and a part of the first conductive lines 11 are electrically connected with the second conductive metal piece 7.

Part of the chips 2 are upper bridge chips 2, and the other part of the chips 2 are lower bridge chips 2. One of the plurality of first conductive traces 11 is provided with an input terminal Vin, and the second conductive trace 41 is provided with an output terminal Vout and a ground terminal GND. In operation of the power module 100, current is input from the input terminal Vin to a first conductive trace 11 and connected to the upper bridge chip 2 on the first conductive trace 11, then flows through the first conductive metal piece 6 to the second conductive trace 41, the second conductive trace 41 is connected to a load through the output terminal Vout, and at the same time, current in the second conductive trace 41 flows through the second conductive metal piece 7 to the first conductive trace 11 on which the lower bridge chip 2 is mounted, flows to the lower bridge chip 2, and then flows from the surface of the lower bridge chip 2 to the second conductive trace 41 through the first conductive metal piece 6 and is connected to the load through the ground terminal GND.

The side of the second conductive track 41 facing away from the insulating layer 3 is provided with electronic components.

A first heat dissipation element is arranged on one side of the substrate 1 away from the first conductive circuit 11; the side of the second conductive track 41 facing away from the insulating layer 3 is provided with a second heat sink. The first heat dissipation piece and the second heat dissipation piece are both heat dissipation fins.

Compared with the power module 100 in the related art, the power module 100 in the embodiment of the utility model has a 50% decrease in module parasitic inductance (Stray inductance) of the power module 100; the On-state resistance (On-resistance) of the module is reduced by 30%; module crust thermal resistance (Junction-to-ambient thermal resistance) decreases by 20%; the service life of the power cycle test is improved by 11 times under the temperature condition within the range of 95-175 ℃; the power cycle test life is improved by 15 times under the temperature condition within the range of 75-175 ℃; the volume of the module is reduced by 45%; the volume power density is improved by 82%, and the working performance of the power module 100 in the embodiment of the utility model is effectively improved.

A method for manufacturing a power module 100 according to an embodiment of the present utility model includes the steps of:

s1, mounting a chip 2 to a substrate 1 and welding the chip with a first conductive line 11;

s2, filling insulating material pieces around the chip 2 and covering the substrate 1 to form an insulating layer 3;

s3, a first wiring channel 31 is formed on one side, away from the first conductive line 11, of the insulating layer 3;

s4, performing an electroplating process on one side of the insulating layer 3 away from the first conductive line 11 to form a conductive layer 4 and filling the first wiring channel 31 to form a first conductive metal piece 6;

s5, etching the second conductive line 41 on the conductive layer 4.

According to the manufacturing method of the power module 100 of the embodiment of the utility model, the conductive layer 4 and the first conductive metal piece 6 are formed on the side, away from the first conductive line 11, of the insulating layer 3 in an electroplating manner, so that the connection reliability of the second conductive line 41 and the insulating layer 3 is enhanced, and the connection reliability of the first conductive metal piece 6 and the battery cell is also enhanced. The power module 100 manufactured by the manufacturing method provided by the embodiment of the utility model replaces bonding aluminum wires in the related technology with the second conductive wire 41 and the first conductive metal piece 6 to form a highly flattened packaging structure, and the chip 2 can be electrically connected with other components or the first conductive wire 11 through the first conductive metal piece 6 and the second conductive wire 41, so that the parasitic inductance of the whole power module 100 is effectively reduced; other components can be mounted on the second conductive circuit 41, so that integration of the power module 100 in the vertical direction is realized, and the power density of the system is improved.

In some embodiments, in S4, the material electroplated in the electroplating process is copper, that is, copper is electroplated on the side of the insulating layer 3 facing away from the first conductive trace 11, so as to form the conductive layer 4 and fill the first trace channel 31 to form the first conductive metal member 6. Because copper has better platability, high plating firmness, better conductivity and better fatigue resistance, the possibility of fracture of the second conductive circuit 41 and the first conductive metal piece 6 is reduced, and the reliability of the power module 100 is effectively enhanced.

In some embodiments, before step S1, the manufacturing method further includes disposing a copper foil on the substrate 1, and etching the copper foil to form the first conductive trace 11.

Because the copper material has better conductivity and better fatigue resistance, the possibility of breaking the first conductive line 11 is reduced, and the reliability of the power module 100 is effectively enhanced. And the first conductive circuit 11 and the electroplating material are the same, are all copper, are convenient for electroplate, have improved the reliability that first conductive circuit 11 and second conductive metal piece 7 are connected, have reduced the possibility that first conductive circuit 11 and second conductive metal piece 7 fracture.

In some embodiments, copper is preset on the bonding pad on the surface of the chip 2, so that the bonding pad on the surface of the chip 2 is connected with the first conductive metal piece 6 during electroplating, the reliability of connection between the surface of the chip 2 and the first conductive metal piece 6 is improved, and the possibility of fracture at the connection part between the surface of the chip 2 and the first conductive metal piece 6 is reduced.

In some embodiments, in S2, a semi-cured insulating resin is filled around the chip 2 and covers the first conductive traces 11 and the chip 2 by a vacuum lamination process to define the insulating layer 3. The insulating layer 3 is mainly used for providing electrical insulation protection between the chip 2, the first conductive trace 11 and the second conductive trace 41, and the insulating layer 3 is also used for providing mechanical support for the second conductive trace 41.

In some embodiments, the insulating layer 3 comprises: a first layer portion 34 and a second layer portion 35, and a copper foil coated on the surface of the second layer portion 35. In S2, the first layer portion 34, that is, the semi-cured insulating resin is filled around the chip 2 and covers the first conductive traces 11 and the surface pads of the chip 2 through the vacuum lamination process, and then the second layer portion 35, that is, the semi-cured resin with the copper foil coated on the surface is filled above the first layer portion 34, thereby forming the insulating layer 3.

Through the above technical scheme, the copper foil is preset on the surface of the second layer portion 35, so that in the subsequent electroplating process, thick copper is electroplated on the copper foil on the surface of the insulating layer 3 to form the conductive layer 4 for etching the second conductive circuit 41, and the reliability of connection between the insulating layer 3 and the second conductive circuit 41 is enhanced.

In some embodiments, in S3, a laser drilling process is used to drill holes in the insulating layer 3 to form the first routing channels 31. The laser drilling technology has the advantages of high drilling speed, high working efficiency and good economic benefit, improves the manufacturing efficiency of the power module 100, and reduces the production cost of the power module 100.

In some embodiments, in S3, a hole is further formed in the insulating layer 3 by a laser drilling process to form the second routing channel 32.

In some embodiments, the ratio of the length to the diameter of the first routing channel 31 ranges from: 0.8:1-1.6:1; and/or the ratio of the length to the diameter of the second routing channel 32 ranges from: 0.8:1-1.6:1.

By the above technical solution, the first routing channel 31 and/or the second routing channel 32 can achieve the best balance among the stability of electroplating process, the insulation property between the through holes and the conductivity of the through holes.

The following describes a method of manufacturing a power module 100 according to some embodiments of the present utility model with reference to fig. 1 and 2.

Firstly, covering a copper foil bonded on the surface of a substrate 1 through high-temperature sintering on the substrate 1 made of ceramic materials, and etching a first conductive circuit 11 on the copper foil; then the chip 2 is stuck to the first conductive circuit 11 on the substrate 1 under the high temperature welding or sintering action of the solder 5 or the sintered silver paste; then filling the first layer part 34, namely semi-cured insulating resin, around the chip 2 and covering the first conductive circuit 11 and the surface bonding pad of the chip 2 through a vacuum lamination process, and then filling the second layer part 35, namely semi-cured resin with copper foil coated on the surface, above the first layer part 34 to form an insulating layer 3; then, a laser drilling process is utilized to open holes on the insulating layer 3 so as to form a first wiring channel 31 and a second wiring channel 32; then, electroplating thick copper on the copper foil on the surface of the insulating layer 3 with the holes to form a conductive layer 4, wherein the electroplating process fills the first wiring channel 31 and the second wiring channel 32 which are cut in advance at the same time to form a first conductive metal piece 6 in the first wiring channel 31 so that a surface bonding pad of the chip 2 is electrically connected with the conductive layer 4, and simultaneously forms a second conductive metal piece 7 in the second wiring channel 32 so that the first conductive circuit 11 is electrically connected with the second conductive circuit 41; finally, a second conductive track 41 is etched into the conductive layer 4.

In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present utility model.

In the description of the utility model, a "first feature" or "second feature" may include one or more of such features.

In the description of the present utility model, "plurality" means two or more.

In the description of the utility model, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include the first and second features not being in direct contact but being in contact with each other by another feature therebetween.

In the description of the utility model, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature.

In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

While embodiments of the present utility model have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the utility model, the scope of which is defined by the claims and their equivalents.

Claims

1. A power module, comprising:

the substrate is provided with a first conductive circuit;

the chip is arranged on the substrate and is connected with the first conductive circuit in a welding way;

the insulating layer covers the chip and the substrate, and is provided with a first wiring channel extending towards the chip;

the second conductive circuit is positioned on one side of the insulating layer, which is away from the first conductive circuit, and is electrically connected with the chip through a first conductive metal piece filled in the first wiring channel;

the power module is configured such that a current flow of at least a portion of the first conductive trace is opposite to a current flow of at least a portion of the second conductive trace;

the plurality of first conductive lines are arranged, each first conductive line is provided with at least one chip, the insulating layer covers the plurality of first conductive lines, the insulating layer is also provided with a second wiring channel, the second wiring channel is filled with a second conductive metal piece electrically connected with the second conductive line, and a part of the first conductive lines are electrically connected with the second conductive metal piece;

the chip is an upper bridge chip, the other part of the chip is a lower bridge chip, one of the first conductive circuits is provided with an input end Vin, and the second conductive circuit is provided with an output end Vout and a ground end GND.

2. The power module of claim 1 wherein the first conductive metal piece is a copper material piece.

3. The power module of claim 1 wherein the second conductive metal piece is a copper material piece.

4. The power module of claim 1 wherein an electronic component is mounted on a side of the second conductive trace facing away from the insulating layer.

5. The power module of claim 1, wherein a side of the substrate facing away from the first conductive trace is provided with a first heat sink; and/or

And a second heat dissipation part is arranged on one side of the second conductive circuit, which is away from the insulating layer.