CN112736049A - Double-sided heat dissipation IGBT module of no lead bonding - Google Patents
Double-sided heat dissipation IGBT module of no lead bonding Download PDFInfo
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- CN112736049A CN112736049A CN202110160268.1A CN202110160268A CN112736049A CN 112736049 A CN112736049 A CN 112736049A CN 202110160268 A CN202110160268 A CN 202110160268A CN 112736049 A CN112736049 A CN 112736049A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a leadless bonded double-sided heat dissipation IGBT module, which comprises an IGBT module body, wherein the IGBT module body mainly comprises an upper insulating substrate, a lower insulating substrate, a terminal and a chip part which are oppositely arranged, the terminal and the chip part are arranged between the two insulating substrates, the upper insulating substrate and the lower insulating substrate respectively comprise a ceramic insulating layer, a first metal layer and a second metal layer, the first metal layer and the second metal layer are arranged on the upper outer surface and the lower outer surface of the ceramic insulating layer, the second metal layer comprises a metal conducting layer and an insulating solder mask attached to the metal conducting layer, and the insulating solder mask is used for controlling the welding area range of the upper insulating substrate and the lower insulating substrate; the terminals and the chip parts are soldered on the metal conducting layer between the second metal layers of the two insulating substrates through solder soldering, and the chip parts, the chip parts and the conducting layers corresponding to the two insulating substrates, and the conducting layers and the terminals of the two insulating substrates are electrically connected through solder soldering.
Description
Technical Field
The invention relates to the technical field of electronic devices, in particular to a double-sided heat dissipation IGBT module without lead bonding.
Background
A power module is a power driver that combines power electronics and integrated circuit technology. The intelligent power module gains a bigger and bigger market due to the advantages of high integration level, high reliability and the like, is particularly suitable for frequency converters of driving motors and various inverter power supplies, and is a common power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances. With the wide application of the IGBT module in the fields of traffic, new energy and the like, the requirement of the market on the IGBT module is higher and higher. At present, a back single-side cooling mode is generally adopted by a common welding type IGBT module, the heat dissipation capacity is low, the thermal resistance is large, chip parts are connected through bonding leads, hundreds of bonding points exist in a single IGBT module, and the single bonding point falls off, so that the reliability of the module is directly influenced.
Disclosure of Invention
The present invention is directed to solve the above-mentioned problems in the prior art, and an object of the present invention is to provide a leadless bonded double-sided heat dissipation IGBT module that can reduce the size of the module, reduce the thermal resistance of the module, and further improve the reliability of the module.
The invention aims to solve the technical scheme that a leadless bonded double-sided heat dissipation IGBT module comprises an IGBT module body, wherein the IGBT module body mainly comprises an upper insulating substrate, a lower insulating substrate, a terminal and a chip part, wherein the upper insulating substrate and the lower insulating substrate are arranged oppositely, the terminal and the chip part are arranged between the two insulating substrates, the upper insulating substrate and the lower insulating substrate respectively comprise a ceramic insulating layer, a first metal layer and a second metal layer, the first metal layer and the second metal layer are arranged on the upper outer surface and the lower outer surface of the ceramic insulating layer, the second metal layer comprises a metal conducting layer and an insulating solder mask attached to the metal conducting layer, and the insulating solder mask is used for controlling the welding area range of the upper insulating substrate and the lower insulating substrate; the terminals and the chip parts are soldered on the metal conducting layer between the second metal layers of the two insulating substrates through solder soldering, and the chip parts, the chip parts and the conducting layers corresponding to the two insulating substrates, and the conducting layers and the terminals of the two insulating substrates are electrically connected through solder soldering.
Furthermore, the chip part is a double-sided weldable chip part, and the gap area between the upper insulating substrate and the lower insulating substrate is filled with insulating gel for improving the voltage-resistant insulating performance between the original devices.
Further, the terminals are distributed on two sides of the IGBT module body in the width direction, the terminals comprise power terminals and signal terminals, the power terminals and the signal terminals are of flexible structures, one side, close to the two insulating substrates, of each terminal is provided with an insulating protective film, and the insulating protective films are made of polyimide films.
Furthermore, the first metal layer and the second metal layer of the upper insulating substrate and the lower insulating substrate are both exposed or electroplated with a layer of weldable metal material.
Furthermore, the chip part is connected with the upper insulating substrate and the lower insulating substrate in a welding mode, the welding is made of one of SnPb, SnAg, SnAgCu and PbSnAg Sn-containing welding materials, and the highest welding temperature is 100-400 degrees.
Furthermore, the terminal is made of copper or silver, a layer of weldable metal material is exposed or electroplated on the surface layer of the terminal, the terminal is welded between the conducting layers of the upper insulating substrate and the lower insulating substrate through soldering, the welding adopts one of SnPb, SnAg, SnAgCu and PbSnAg Sn-containing welding materials, and the highest welding temperature is 100-400 degrees.
The invention has the beneficial technical effects that: according to the IGBT module structure, the top and the bottom of the module can be cooled simultaneously, no bonding lead is arranged in the module, and the module is directly connected by using the insulating substrate metal layer, so that the size of the module structure can be reduced, the thermal resistance of the module is reduced, and the reliability of the module is improved.
Drawings
FIG. 1 is a schematic illustration of an explosive structure according to the present invention;
FIG. 2 is a side view of the exploded structure of the present invention;
FIG. 3 is a schematic side view of the present invention;
FIG. 4 is a schematic view of the structure of FIG. 3 in the direction A;
fig. 5 is a schematic circuit structure of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood by those skilled in the art, the present invention is further described with reference to the accompanying drawings and examples.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "left", "right", "inside", "outside", "lateral", "vertical", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description of the present invention, and do not indicate or imply that the device or element referred to must have a specific orientation, and thus, should not be construed as limiting the present invention.
As shown in fig. 1-5, the double-sided heat dissipation IGBT module without wire bonding according to the present invention includes an IGBT module body, the IGBT module body mainly includes an upper insulating substrate 1, a lower insulating substrate 2, a terminal 3 and a chip portion 4, the upper insulating substrate 1 and the lower insulating substrate 2 are disposed opposite to each other, the upper insulating substrate 1 and the lower insulating substrate 2 both include a ceramic insulating layer 5, and a first metal layer 6 and a second metal layer 7 disposed on the upper and lower outer surfaces of the ceramic insulating layer 5, the second metal layer 7 includes a metal conductive layer and an insulating solder mask 8 attached to the metal conductive layer, and the insulating solder mask 8 is used for controlling the range of a soldering area of the upper insulating substrate 1 and the lower insulating substrate 2; the terminals 3 and the chip portions 4 are soldered to the metal conductive layers between the second metal layers 7 of the two insulating substrates by solder 9, and the chip portions 4, the chip portions 4 and the corresponding conductive layers of the two insulating substrates, and the conductive layers of the two insulating substrates and the terminals 3 are electrically connected by solder.
Referring to fig. 1-4, the chip portion 4 is a double-sided solderable chip portion, and the gap area between the upper insulating substrate 1 and the lower insulating substrate 2 is filled with an insulating gel 10 for improving the voltage-resistant insulating property between the original devices; the circuit connection between the chip part 3 and the insulating substrate and between the chip part and the chip part are directly conducted through the solder 9 without the need of wire connection.
Referring to fig. 4, the terminals 3 are distributed on two sides of the IGBT module body in the width direction, the terminals 3 include power terminals 11 and signal terminals 12, the power terminals 11 and the signal terminals 12 are both flexible structures, an insulating protective film 13 is disposed on one side of each terminal close to the two insulating substrates, and the insulating protective film 13 is made of a polyimide film. The circuit connection between the terminal 3 and the insulating substrate is directly conducted through the solder without lead connection.
Referring to fig. 1, the first metal layer 6 and the second metal layer 7 of the upper insulating substrate 1 and the lower insulating substrate 2 are both exposed or plated with a layer of solderable metal material such as electroplated gold, nickel or tin. The chip part 4 is connected with the upper insulating substrate 1 and the lower insulating substrate 2 in a welding mode, the welding is made of one of SnPb, SnAg, SnAgCu and PbSnAg Sn-containing welding materials, and the highest welding temperature is 100-400 degrees. The terminal is copper or silver, a layer of weldable metal material such as gold, nickel or tin is exposed or electroplated on the surface layer of the terminal 3, the terminal 3 is welded between the conducting layers of the upper insulating substrate and the lower insulating substrate through tin soldering, the welding adopts one of SnPb, SnAg, SnAgCu and PbSnAg welding materials, and the highest welding temperature is 100-400 degrees.
The chip parts, the chip parts and the corresponding conducting layers of the insulating substrate, and the insulating substrate and the terminals are directly communicated through the solder to realize electrical connection, so that a circuit structure shown in figure 4 is formed, and the circuit function is realized.
According to the IGBT module structure, the top and the bottom of the module can be cooled simultaneously, no bonding lead is arranged in the module, and the module is directly connected by using the insulating substrate metal layer, so that the size of the module structure can be reduced, the thermal resistance of the module is reduced, and the reliability of the module is improved.
The specific embodiments described herein are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (6)
1. The utility model provides a no double-sided heat dissipation IGBT module of wire bonding, includes IGBT module body, its characterized in that: the IGBT module body mainly comprises an upper insulating substrate, a lower insulating substrate, a terminal and a chip part, wherein the upper insulating substrate and the lower insulating substrate are arranged oppositely, the terminal and the chip part are arranged between the two insulating substrates, the upper insulating substrate and the lower insulating substrate respectively comprise a ceramic insulating layer, a first metal layer and a second metal layer, the first metal layer and the second metal layer are arranged on the upper outer surface and the lower outer surface of the ceramic insulating layer, the second metal layer comprises a metal conducting layer and an insulating solder mask attached to the metal conducting layer, and the insulating solder mask is used for controlling the welding area range of the upper insulating substrate and; the terminals and the chip parts are soldered on the metal conducting layer between the second metal layers of the two insulating substrates through solder soldering, and the chip parts, the chip parts and the conducting layers corresponding to the two insulating substrates, and the conducting layers and the terminals of the two insulating substrates are electrically connected through solder soldering.
2. The wirebond-less, double-sided, heat dissipating IGBT module of claim 1, wherein: the chip part is a double-sided weldable chip part, and the gap area between the upper insulating substrate and the lower insulating substrate is filled with insulating gel for improving the voltage-resistant insulating property between the original devices.
3. The wirebond-less, double-sided, heat dissipating IGBT module of claim 2, wherein: the terminal distributes on IGBT module body width direction's both sides edge, the terminal includes power terminal and signal terminal, just power terminal and signal terminal are flexible structure, and one side that the terminal is close to two insulation substrate is provided with the insulating protection film, and the material of insulating protection film is the polyimide film.
4. The wirebond-less, double-sided, heat dissipating IGBT module of claim 2 or 3, wherein: the first metal layer and the second metal layer of the upper insulating substrate and the lower insulating substrate are both exposed or electroplated with a layer of weldable metal material.
5. The wirebond-less, double-sided, heat dissipating IGBT module of claim 4, wherein: the chip part is connected with the upper insulating substrate and the lower insulating substrate in a welding mode, one of SnPb, SnAg, SnAgCu and PbSnAg Sn-containing welding materials is adopted for welding, and the highest welding temperature is 100-400 degrees.
6. The wirebond-less, double-sided, heat dissipating IGBT module of claim 4, wherein: the terminal is made of copper or silver, a layer of weldable metal material is exposed or electroplated on the surface layer of the terminal, the terminal is welded between the conducting layers of the upper insulating substrate and the lower insulating substrate through tin soldering, one of SnPb, SnAg, SnAgCu and PbSnAg welding materials is adopted for welding, and the highest welding temperature is 100-400 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110160268.1A CN112736049A (en) | 2021-02-05 | 2021-02-05 | Double-sided heat dissipation IGBT module of no lead bonding |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110160268.1A CN112736049A (en) | 2021-02-05 | 2021-02-05 | Double-sided heat dissipation IGBT module of no lead bonding |
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| Publication Number | Publication Date |
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| CN112736049A true CN112736049A (en) | 2021-04-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110160268.1A Pending CN112736049A (en) | 2021-02-05 | 2021-02-05 | Double-sided heat dissipation IGBT module of no lead bonding |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113540017A (en) * | 2021-06-30 | 2021-10-22 | 佛山市国星光电股份有限公司 | IGBT module packaging structure and manufacturing method thereof |
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2021
- 2021-02-05 CN CN202110160268.1A patent/CN112736049A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113540017A (en) * | 2021-06-30 | 2021-10-22 | 佛山市国星光电股份有限公司 | IGBT module packaging structure and manufacturing method thereof |
| CN113540017B (en) * | 2021-06-30 | 2024-04-09 | 佛山市国星光电股份有限公司 | IGBT module packaging structure and manufacturing method thereof |
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