CN113540017A - IGBT module packaging structure and manufacturing method thereof - Google Patents

IGBT module packaging structure and manufacturing method thereof Download PDF

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Publication number
CN113540017A
CN113540017A CN202110738971.6A CN202110738971A CN113540017A CN 113540017 A CN113540017 A CN 113540017A CN 202110738971 A CN202110738971 A CN 202110738971A CN 113540017 A CN113540017 A CN 113540017A
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layer
chip
metal layer
igbt module
electrically connected
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CN113540017B (en
Inventor
张普翔
秦快
郭恒
谢宗贤
陈启燊
冯飞成
李红
欧阳小波
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Foshan NationStar Optoelectronics Co Ltd
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Foshan NationStar Optoelectronics Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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    • H01L25/165—Containers
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0231—Manufacturing methods of the redistribution layers
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0233—Structure of the redistribution layers
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
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Abstract

The invention discloses an IGBT module packaging structure and a manufacturing method thereof, wherein a substrate and a circuit layer are sequentially stacked on a bottom plate of the IGBT module packaging structure, a first chip and a second chip are arranged in a groove of a first metal layer of the substrate, bottom electrodes of the first chip and the second chip are electrically connected with a first connecting terminal on the circuit layer through the first metal layer, a top electrode of the first chip and one top electrode of the second chip are electrically connected with a second connecting terminal on the circuit layer, and the other top electrode of the second chip is electrically connected with a third connecting terminal on the circuit layer; the shell is provided with three lead terminals which are respectively and electrically connected with the three connecting terminals. The first chip and the second chip are arranged in the groove, so that the size of the IGBT module packaging structure is reduced; by arranging the circuit layer on the first metal layer, low power consumption and high-speed communication between chips are realized, and the reliability of the IGBT module is improved.

Description

IGBT module packaging structure and manufacturing method thereof
Technical Field
The invention relates to the field of IGBT module packaging, in particular to an IGBT module packaging structure and a manufacturing method of the IGBT module packaging structure.
Background
Because the IGBT module has the characteristics of large input impedance, small driving power, simple control circuit, small switching loss, high on-off speed, high working frequency and the like, the IGBT module is widely applied to the traditional industrial fields of industry, national defense and military industry and the like and the strategic novel industrial fields of rail transit, new energy automobiles and the like.
The traditional IGBT module mostly adopts lead bonding to realize the electrical connection between the chips, but the lead wire length is great, and lead wire inductance is big, the consume is high, and bears the vibration ability relatively poor, breaks easily, leads to the reliability of IGBT module to hang down.
Disclosure of Invention
One object of an embodiment of the present invention is to: provided is an IGBT module packaging structure with high reliability.
Another object of an embodiment of the present invention is to: the manufacturing method of the IGBT module packaging structure is high in production efficiency.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, an IGBT module package structure is provided, including:
a base plate, wherein a substrate and a circuit layer are sequentially stacked on the base plate, the substrate comprises an insulating layer and a first metal layer, the first metal layer is positioned between the insulating layer and the circuit layer, the upper surface of the first metal layer is provided with a groove, the notch of the groove is opened towards the circuit layer, a first chip and a second chip are arranged in the groove at intervals, the first chip and the second chip are both provided with a top electrode and a bottom electrode, the bottom electrodes of the first chip and the second chip are electrically connected with the first connecting terminal on the circuit layer through the first metal layer, the top electrode of the first chip and one of the top electrodes of the second chip are electrically connected to a second connection terminal on the wiring layer, the other top electrode of the second chip is electrically connected with a third connecting terminal on the circuit layer;
a housing, be provided with three lead terminal on the shell, it is three the lead terminal respectively with on the circuit layer first connecting terminal second connecting terminal with third connecting terminal electricity is connected, the shell with the bottom plate is connected and is formed between the two and hold the chamber, the base plate first chip second chip and circuit layer all are located hold the intracavity.
As a preferred scheme of the IGBT module package structure, a first hole is formed in the top electrode, a second metal layer is filled in the first hole, the second metal layer is electrically connected to the circuit layer, and a barrier layer made of a conductive material is disposed between the second metal layer and a hole wall of the first hole.
As a preferable scheme of the IGBT module packaging structure, a transition layer made of a conductive material is disposed between the second metal layer and the barrier layer.
As a preferable scheme of the IGBT module package structure, solder balls are disposed on the second metal layer, and the second metal layer is electrically connected to the circuit layer through the solder balls.
As a preferable scheme of the IGBT module packaging structure, an upper surface of the top electrode is flush with an upper surface of the first metal layer.
As a preferable scheme of the IGBT module package structure, the substrate includes a third metal layer, and the third metal layer is located between the insulating layer and the bottom plate.
As a preferable scheme of the IGBT module packaging structure, the IGBT module packaging structure includes a functional element, the functional element is disposed on the line layer, and the functional element is electrically connected to the first chip and the second chip through the line layer.
As a preferred scheme of the IGBT module packaging structure, a first filling layer is filled in the groove; and/or the presence of a gas in the gas,
the accommodating cavity is filled with a second filling layer.
In a second aspect, a method for manufacturing an IGBT module package structure is provided, for manufacturing the IGBT module package structure, including the following steps:
fixing the substrate on the bottom plate;
etching the upper surface of the first metal layer of the substrate to form a groove;
respectively fixing a first chip and a second chip in the groove, and electrically connecting bottom electrodes of the first chip and the second chip with the first metal layer;
forming a circuit layer on the upper surface of the first metal layer, so that the first metal layer is electrically connected with a first connecting terminal on the circuit layer, a top electrode of the first chip and one top electrode of the second chip are electrically connected with a second connecting terminal on the circuit layer, and the other top electrode of the second chip is electrically connected with a third connecting terminal on the circuit layer;
and connecting the bottom plate with the shell, and electrically connecting the three lead terminals on the shell with the first connecting terminal, the second connecting terminal and the third connecting terminal on the circuit layer respectively.
As a preferred scheme of the manufacturing method of the IGBT module package structure, a first hole is formed in the top electrode, a barrier layer, a transition layer, and a second metal layer are respectively formed in the first hole, then a solder ball is processed on the second metal layer, and the second metal layer and the circuit layer are electrically connected through the solder ball.
As a preferable scheme of the manufacturing method of the IGBT module package structure, after the solder balls are processed and molded, the first filling layer is filled in the grooves, and then the circuit layer is molded.
As a preferable embodiment of the method for manufacturing the IGBT module package structure, after the circuit layer is formed, the functional element is electrically connected to the circuit layer, then the base plate is connected to the housing, and the three lead terminals on the housing are electrically connected to the first connection terminal, the second connection terminal, and the third connection terminal on the circuit layer, respectively.
As a preferable scheme of the manufacturing method of the IGBT module package structure, an accommodating cavity is formed after the bottom plate and the housing are connected, and a second filling layer is filled in the accommodating cavity.
The invention has the beneficial effects that: the first chip and the second chip are arranged in the grooves by arranging the grooves on the first metal layer, so that the size of an IGBT module packaging structure is reduced, and the miniaturization of IGBT module integration is realized; the circuit layer is arranged on the first metal layer, and an original lead structure is replaced by a layered circuit structure, so that the inductance and the internal resistance of a circuit are reduced, the signal delay is reduced, the low power consumption and the high-speed communication between chips are realized, and the reliability of the IGBT module is improved.
Drawings
The invention is explained in more detail below with reference to the figures and examples.
Fig. 1 is a schematic diagram of an IGBT module package structure according to an embodiment of the present invention.
Fig. 2 to 7 are schematic diagrams illustrating steps of a method for manufacturing an IGBT module package structure according to an embodiment of the invention.
FIG. 8 is a schematic view of a top electrode according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems solved, technical solutions adopted and technical effects achieved by the present invention clearer, the technical solutions of the embodiments of the present invention will be described in further detail below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 and fig. 3, the IGBT module package structure provided by the present invention includes a bottom plate 1, a substrate 3 and a circuit layer 10 are sequentially stacked on the bottom plate 1, the substrate 3 includes an insulating layer 302 and a first metal layer 303, the first metal layer 303 is located between the insulating layer 302 and the circuit layer 10, a groove is disposed on an upper surface of the first metal layer 303, a notch of the groove is opened toward the circuit layer 10, a first chip 7 and a second chip 8 are disposed in the groove at an interval, the first chip 7 and the second chip 8 are both provided with a top electrode 16 and a bottom electrode 17, a bottom electrode 1701 of the first chip 7 and a bottom electrode 1702 of the second chip 8 are electrically connected to a first connection terminal 1001 on the circuit layer 10 through the first metal layer 303, a top electrode 1601 of the first chip 7 and a top electrode 1602 of the second chip 8 are electrically connected to a second connection terminal 1002 on the circuit layer 10, the other top electrode 1603 of the second chip 8 is connected with a third connecting terminal 1003 on the wiring layer 10, three lead terminals 1401, 1402 and 1403 are arranged on the shell 14, the lead terminals 1401, 1402 and 1403 are respectively and electrically connected with the first connecting terminal 1001, the second connecting terminal 1002 and the third connecting terminal 1003, the shell 14 is connected with the bottom plate 1, a containing cavity is formed between the shell 14 and the bottom plate, and the substrate 3, the first chip 7, the second chip 8 and the wiring layer 10 are all located in the containing cavity. The first chip 7 and the second chip 8 are arranged in the grooves by arranging the grooves on the first metal layer 303, so that the size of an IGBT module packaging structure is reduced, and the integration miniaturization of an IGBT module is realized; by arranging the circuit layer 10 on the first metal layer 303, the original lead structure is replaced by a layered circuit structure, so that the inductance and the internal resistance of the circuit are reduced, the signal delay is reduced, the low power consumption and the high-speed communication between chips are realized, and the reliability of the IGBT module is improved.
Specifically, in this embodiment, the first chip 7 is an FWD chip, the bottom electrode 1701 on the first chip 7 is a cathode of the FWD chip, the top electrode 1601 on the first chip 7 is an anode of the FWD chip, the second chip 8 is an IGBT chip, the bottom electrode 1702 of the second chip 8 is a collector of the IGBT chip, one top electrode 1602 of the second chip 8 is an emitter of the IGBT chip, the other top electrode 1603 of the second chip 8 is a gate of the IGBT chip, the cathode 1701 of the FWD chip and the collector 1702 of the IGBT chip are electrically connected to the first connection terminal 1001 on the wiring layer 10 through the first metal layer 303, the anode 1601 of the FWD chip and the emitter 1602 of the IGBT chip are electrically connected to the second connection terminal 1002 on the wiring layer 10, and the gate 1603 of the IGBT chip is electrically connected to the third connection terminal 1003 on the wiring layer 10 separately. In this embodiment, one first chip 7 and one second chip 8 form a chip set, and one group of chip sets is disposed in one IGBT module packaging structure.
Specifically, the circuit layer 10 includes a circuit structure and a dielectric layer, the circuit structure includes a first connection terminal 1001, a second connection terminal 1002 and a third connection terminal 1003, the dielectric layer is made of an insulating material, and the dielectric layer can provide support for the circuit structure, so that the processing difficulty of the circuit structure is reduced.
Referring to fig. 2 to 7, the present embodiment further provides a method for manufacturing an IGBT module package structure, which is applied to manufacture the IGBT module package structure, and includes the following steps:
fixing the substrate 3 on the bottom plate 1;
etching the upper surface of the first metal layer 303 of the substrate 3 to form a groove;
fixing the first chip 7 and the second chip 8 in the groove, and electrically connecting the bottom electrode 1701 of the first chip 7 and the bottom electrode 1702 of the second chip 8 with the first metal layer 303;
forming a wiring layer 10 on the upper surface of the first metal layer 303, electrically connecting the first metal layer 303 and a first connection terminal 1001 on the wiring layer 10, electrically connecting a top electrode 1601 of the first chip 7 and one top electrode 1602 of the second chip 8 with a second connection terminal 1002 on the wiring layer 10, and electrically connecting the other top electrode 1603 of the second chip 8 with a third connection terminal 1003 on the wiring layer 10;
the base plate 1 and the case 14 are connected, and the lead terminal 1401, the lead terminal 1402, and the lead terminal 1403 on the case 14 are electrically connected to the first connection terminal 1001, the second connection terminal 1002, and the third connection terminal 1003 on the wiring layer 10, respectively.
Specifically, after the first chip 7 and the second chip 8 are fixed, the circuit layer 10 is formed on the first metal layer 303, and the circuit structure in the circuit layer 10 can be designed according to the specific installation positions of the first chip 7 and the second chip 8, so that the connection difficulty between the first chip 7 and the second chip 8 and the circuit layer 10 is reduced.
Specifically, the first chip 7 and the second chip 8 are horizontally arranged in the groove, and because the first chip 7 and the second chip 8 may have different thicknesses, the depth of the groove region where the first chip 7 and the second chip 8 are located can be adjusted, and it is ensured that the top electrodes 16 of the first chip 7 and the second chip 8 are all flush with the upper surface of the first metal layer 303, so that the thicknesses of all the positions of the circuit layer 10 are consistent, and the wiring difficulty of the circuit layer 10 is reduced.
Specifically, the manufacturing method of the IGBT module packaging structure comprises the following steps:
step 100, bonding the base plate 1 and the substrate 3 through the first connecting layer 2 to fix the substrate 3 on the base plate 1;
step 200, etching and grooving the first metal layer 303 on the substrate 3 to form a groove;
step 300, respectively welding the first chip 7 and the second chip 8 on the groove bottom of the groove through the second connection layer 6;
step 400, depositing a metal layer and a dielectric layer on the upper surface of the first metal layer 303 to form a corresponding line forming layer 10;
step 500, the housing 14 and the base plate 1 are connected.
The first connecting layer 2 is made of adhesive materials such as mucilage and the like, so that the connecting strength of the substrate 3 and the bottom plate 1 can be ensured; the insulating layer 302 is made of materials with the characteristics of high heat conductivity, high electrical insulation, high mechanical strength and low expansion, such as aluminum oxide ceramic, aluminum nitride ceramic or beryllium oxide; the material of the second connection layer 6 is solder, so that the first chip 7 and the second chip 8 can be electrically connected to the first metal layer 303. The thickness of the wiring layer 10 is 80-120 μm, so that the connection strength of the connection wiring can be ensured
Specifically, the substrate 3 includes a third metal layer 301, the third metal layer 301 is located between the insulating layer 302 and the bottom plate 1, the bottom plate 1 and the third metal layer 301 are bonded through the first connection layer 2, so that the substrate 3 is fixed on the bottom plate 1, and the third metal layer 301 can improve the heat dissipation effect of the substrate 3 on the first chip 7 and the second chip 8.
Referring to fig. 8, specifically, the top electrodes 16 of the first chip 7 and the second chip 8 are provided with first holes, in this embodiment, the size of the top electrode 16 is 350-400 micrometers, the diameter of the first hole is 80-100 micrometers, the first hole is filled with the second metal layer 5, the second metal layer 5 is electrically connected to the line layer 10, and a barrier layer 15 made of a conductive material is provided between the second metal layer 5 and the hole wall of the first hole; the material of the second metal layer 5 may be copper, aluminum, gold, or tungsten, the material of the barrier layer 15 may be titanium, tantalum, or tantalum nitride, in this embodiment, the material of the second metal layer 5 is copper, the material of the barrier layer 15 is titanium, and the difficulty in welding between the first chip 7 and the second chip 8 and the circuit layer 10 can be reduced by disposing the second metal layer 5 made of copper; when the chip is used, under a high-temperature environment, the copper simple substance in the second metal layer 5 is easily converted into copper ions, the barrier layer 15 made of titanium can prevent the copper ions in the second metal layer 5 from diffusing outwards, and the connection stability between the first chip 7 and the second chip 8 and the circuit layer 10 is ensured.
Specifically, a transition layer 12 made of a conductive material is disposed between the second metal layer 5 and the barrier layer 15, the material of the transition layer 12 may be copper, a copper-titanium alloy, tantalum, or tantalum nitride, and in this embodiment, the material of the transition layer 12 is a copper-titanium alloy for conducting the filling electroplating of the second metal layer 5.
Specifically, the second metal layer 5 is provided with solder balls 4, and the second metal layer 5 is electrically connected to the circuit layer 10 through the solder balls 4.
Specifically, the groove is filled with a first filling layer 9, and the first filling layer 9 is made of insulating silica gel, silicone resin or epoxy resin. Through setting up first filling layer 9, can avoid first chip 7 and second chip 8 to shift, simultaneously, first filling layer 9 can play the effect of support to circuit layer 10, avoids circuit layer 10 to appear collapsing, avoids the device phenomenon of opening circuit to appear.
Specifically, the method for manufacturing the IGBT module package structure further includes, between step 300 and step 400:
step 310, forming a first hole in the top electrode 16;
step 320, forming a barrier layer 15, a transition layer 12 and a second metal layer 5 in the first hole in sequence;
step 330, processing the solder ball 4 on the second metal layer 5, wherein the highest point of the solder ball 4 is flush with the upper surface of the first metal layer 303;
step 340, filling the first filling layer 9 into the groove, so that the upper surface of the first filling layer 9 is flush with the upper surface of the first metal layer 303.
Specifically, a first hole is formed in the top electrode 16 by laser etching or deep reactive ion etching, the barrier layer 15 is formed by chemical vapor deposition or physical deposition, the transition layer 12 is formed by spraying or electroplating, the second metal layer 5 is formed by electroplating, spraying or printing, and the solder ball 4 is formed on the second metal layer 5 by spot coating or screen printing.
Specifically, the functional element 11 is connected to the upper surface of the circuit layer 10, the functional element 11 includes elements such as a temperature sensor, a current sensor, and a driving circuit, and the first chip 7 and the second chip 8 are electrically connected through the circuit layer 10 and the functional element 11. The function of the IGBT module can be increased by the arrangement of the functional element 11, so that the IGBT module can adapt to different use scenarios.
Specifically, the functional elements 11 are provided in plurality, at least two functional elements 11 are disposed on the upper surface of the circuit layer 10 in a stacked manner, the stacked functional elements 11 are provided with second holes, the second metal layer 5, the transition layer 12 and the barrier layer 15 are correspondingly disposed in the second holes, two adjacent stacked functional elements 11 are connected through the solder balls 4, and the functional elements 11 and the circuit layer 10 are also connected through the solder balls 4, so that the connection stability of the functional elements 11 and the circuit layer 10 can be improved.
Specifically, the method for manufacturing the IGBT module package structure further includes, between step 400 and step 500:
step 410, making a second hole on the functional element 11;
step 420, forming a barrier layer 15, a transition layer 12 and a second metal layer 5 in the second hole in sequence;
step 430, processing solder balls 4 on the second metal layer 5, soldering a plurality of functional elements 11 by using the solder balls 4, and electrically connecting the soldered functional elements 11 with the circuit layer 10 through the solder balls 4.
Specifically, first, a second hole is formed in the functional element 11 by laser etching or deep reactive ion etching, the barrier layer 15 is formed by chemical vapor deposition or physical deposition, then the transition layer 12 is formed by spraying or electroplating, then the second metal layer 5 is formed by electroplating, spraying or printing, and finally the solder ball 4 is formed on the second metal layer 5 by spot coating or steel screen printing.
Specifically, the accommodating cavity formed by the housing 14 and the bottom plate 1 is filled with a second filling layer 13, and the second filling layer 13 is made of materials with good heat conduction effects, such as organic silicon heat conduction glue, epoxy resin AB glue, polyurethane glue and heat conduction silicone grease. The second filling layer 13 is arranged, so that the heat dissipation efficiency of the first chip 7 and the second chip 8 is improved; because the functional element 11 protrudes out of the outer surface of the circuit layer 10, the second filling layer 13 is arranged, so that the functional element 11 can be supported, and the phenomenon of circuit breaking is avoided.
Specifically, after step 500 of the method for manufacturing the IGBT module package structure, the method further includes:
step 600, filling the second filling layer 13 into the accommodating cavity.
Specifically, a glue filling hole may be provided in the housing 14, the second filling layer 13 is formed by filling the accommodating cavity with glue in a negative pressure vacuum environment, and the glue filling hole may be blocked after the filling operation is completed.
In summary, the IGBT module package structure provided by the invention provides a mounting space for the first chip and the second chip by disposing the groove on the first metal layer, thereby reducing the size of the IGBT module package structure; the circuit layer is arranged to replace the original lead structure, so that the inductance and the internal resistance of the circuit can be reduced, the signal delay is reduced, the low power consumption and the high-speed communication among chips are realized, and the reliability of the IGBT module is improved; the first filling layer is arranged, so that the first chip and the second chip can be prevented from shifting, the circuit layer can be supported, and the circuit layer can be prevented from collapsing; the second filling layer is arranged, so that the radiating efficiency of the first chip and the second chip is accelerated, the functional element can be supported, and the phenomenon of circuit breaking is avoided.

Claims (13)

1. An IGBT module packaging structure, characterized by comprising:
a base plate, wherein a substrate and a circuit layer are sequentially stacked on the base plate, the substrate comprises an insulating layer and a first metal layer, the first metal layer is positioned between the insulating layer and the circuit layer, the upper surface of the first metal layer is provided with a groove, the notch of the groove is opened towards the circuit layer, a first chip and a second chip are arranged in the groove at intervals, the first chip and the second chip are both provided with a top electrode and a bottom electrode, the bottom electrodes of the first chip and the second chip are electrically connected with the first connection terminal on the circuit layer through the first metal layer, the top electrode of the first chip and one of the top electrodes of the second chip are electrically connected to a second connection terminal on the wiring layer, the other top electrode of the second chip is electrically connected with a third connecting terminal on the circuit layer;
a housing, be provided with three lead terminal on the shell, it is three the lead terminal respectively with on the circuit layer first connecting terminal second connecting terminal with third connecting terminal electricity is connected, the shell with the bottom plate is connected and is formed between the two and hold the chamber, the base plate first chip the second chip with the circuit layer all is located hold the intracavity.
2. The IGBT module package structure of claim 1, wherein the top electrode is provided with a first hole, the first hole is filled with a second metal layer, the second metal layer is electrically connected with the line layer, and a barrier layer made of a conductive material is arranged between the second metal layer and a hole wall of the first hole.
3. The IGBT module package structure of claim 2, wherein a transition layer of conductive material is disposed between the second metal layer and the barrier layer.
4. The IGBT module package structure of claim 2, wherein solder balls are disposed on the second metal layer, and the second metal layer is electrically connected to the circuit layer through the solder balls.
5. The IGBT module package structure of claim 2, wherein an upper surface of the top electrode is flush with an upper surface of the first metal layer.
6. The IGBT module package structure of claim 1, wherein the substrate comprises a third metal layer located between the insulating layer and the bottom plate.
7. The IGBT module package structure according to claim 1, comprising a functional element provided on the wiring layer, the functional element being electrically connected with the first chip and the second chip through the wiring layer.
8. The IGBT module package structure of claim 1, wherein the recess is filled with a first filling layer; and/or the presence of a gas in the gas,
the accommodating cavity is filled with a second filling layer.
9. A method for manufacturing an IGBT module package structure according to any one of claims 1 to 8, comprising the steps of:
fixing the substrate on the bottom plate;
etching the upper surface of the first metal layer of the substrate to form a groove;
fixing a first chip and a second chip in the groove, and electrically connecting bottom electrodes of the first chip and the second chip with the first metal layer;
forming a circuit layer on the upper surface of the first metal layer, so that the first metal layer is electrically connected with a first connecting terminal on the circuit layer, a top electrode of the first chip and one top electrode of the second chip are electrically connected with a second connecting terminal on the circuit layer, and the other top electrode of the second chip is electrically connected with a third connecting terminal on the circuit layer;
and connecting the bottom plate with the shell, and electrically connecting the three lead terminals on the shell with the first connecting terminal, the second connecting terminal and the third connecting terminal on the circuit layer respectively.
10. The method for manufacturing the IGBT module package structure according to claim 9, wherein a first hole is formed on the top electrode, a barrier layer, a transition layer, and a second metal layer are respectively formed in the first hole, and then a solder ball is processed on the second metal layer, and the second metal layer is electrically connected to the circuit layer through the solder ball.
11. The method of claim 10, wherein after the solder balls are formed, the first filling layer is filled in the grooves, and then the circuit layer is formed.
12. The method of manufacturing an IGBT module package structure according to claim 11, wherein after the wiring layer is molded, a functional element is electrically connected to the wiring layer, and then the case is connected to the bottom plate, and three of the lead terminals on the case are electrically connected to the first connection terminal, the second connection terminal, and the third connection terminal on the wiring layer, respectively.
13. The method for manufacturing the IGBT module package structure according to claim 12, wherein a receiving cavity is formed after the bottom plate and the housing are connected, and a second filling layer is filled in the receiving cavity.
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