CN102931099A - Method for forming semiconductor component - Google Patents
Method for forming semiconductor component Download PDFInfo
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- CN102931099A CN102931099A CN2012104444746A CN201210444474A CN102931099A CN 102931099 A CN102931099 A CN 102931099A CN 2012104444746 A CN2012104444746 A CN 2012104444746A CN 201210444474 A CN201210444474 A CN 201210444474A CN 102931099 A CN102931099 A CN 102931099A
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- columnar electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
Abstract
The invention discloses a method for forming a semiconductor component, which comprises the steps of: providing a semiconductor base which is provided with a plurality of pads; forming a passivation layer on the semiconductor base, wherein the passivation layer is provided with first openings which are exposed on the surfaces of the pads; forming columnar electrodes on the pads, wherein the columnar electrodes comprise main bodies and grooves which are arranged in the main bodies, and the openings of the grooves are overlapped with the top surfaces of the columnar electrodes; and forming welding balls on the columnar electrodes, wherein the welding balls comprise metal convex heads which are arranged at the tops of the columnar electrodes and filling parts which are filled in the grooves. Through a structure which is similar to a bolt and is formed by the welding balls and the columnar electrodes, the adhesion between the welding balls and the columnar electrodes is enhanced.
Description
Technical field
The present invention relates to the semiconductor packages field, particularly a kind of formation method that can improve the semiconductor device of soldered ball and columnar electrode adhesion.
Background technology
Wafer-level package (Chip Scale Package, CSP) is as the chip encapsulation technology of latest generation, the advantages such as the product of CSP encapsulation has that volume is little, good electrical property and good in thermal property.Wafer level CSP (WCSP) is a kind of as wafer-level package, is to encapsulate at disk first, and tests with the form of disk that burn-in screen is divided into disk thereafter single CSP circuit again.
Publication number is the semiconductor device that discloses a kind of wafer level CSP structure in the Chinese patent of CN1630029A, please refer to Fig. 1, and comprising: semiconductor base 11 has pad 12 on the described semiconductor base 11; Be positioned at the passivation layer 14 on described semiconductor base 11 surfaces, described passivation layer 14 has the opening on exposed pad 12 surfaces; Be positioned at the again wiring layer 16 of part passivation layer 14 surfaces and opening, wiring layer 16 is connected with pad 12 again; Be positioned at the columnar electrode 17 on outer again wiring layer 16 surfaces of described opening; Cover the insulating barrier 20 on described again wiring layer 16 and part passivation layer 14 surfaces, the surface of insulating barrier 20 is surperficial concordant with columnar electrode 17; Be positioned at the soldered ball 21 on columnar electrode 17 surfaces.
Soldered ball in the existing semiconductor device comes off from the surface of columnar electrode easily.
Summary of the invention
The problem that the present invention solves provides a kind of formation method of semiconductor device, improves the adhesion between soldered ball and the columnar electrode.
For addressing the above problem, technical solution of the present invention provides a kind of formation method of semiconductor device, comprising: semiconductor base is provided, and described semiconductor base has some pads; Form passivation layer at described semiconductor base, described passivation layer has first opening on exposed pad surface; Formation columnar electrode on described pad, described columnar electrode comprise body and are arranged in the groove of described body that the opening of groove overlaps with the top surface of columnar electrode; Form soldered ball at described columnar electrode, described soldered ball comprises the metal plush copper that is positioned at the columnar electrode top and the filling part of filling full described groove.
Optionally, the degree of depth of described groove is 0.5% ~ 99.9% of body height.
Optionally, the quantity of described groove is 1, and the radius of described groove is 1% ~ 99% of columnar electrode body radius.
Optionally, the quantity of described groove is greater than 1, and groove is independent distribution in body.
Optionally, described groove linearly distribution in body, matrix distribution, concentric circles distribute, donut distributes, polygon distributes or irregular distribution.
Optionally, the formation method of described columnar electrode is: form Seed Layer at the sidewall of described the first opening and the surface of bottom and passivation layer; Form the first photoresist layer on described Seed Layer surface, described the first photoresist layer has second opening corresponding with the first opening; Adopt electroplating technology in described the first opening and the second opening, to fill full metal, form the body of columnar electrode; Remove described the first photoresist layer; Some Species sublayer take described columnar electrode as mask on the removal passivation layer; Form the first insulating barrier at described passivation layer; Form the second photoresist layer at described the first surface of insulating layer, have at least one the 3rd opening that exposes the columnar electrode body surface in described the second photoresist layer; Remove body, at least one groove of formation in body, described body and the groove formation columnar electrode of the described columnar electrode of segment thickness along the 3rd opening etching.
Optionally, from the opening of groove to the bottom, the width of described groove reduces gradually.
Optionally, the material of the body of described columnar electrode is copper, and the technique of the body of etching columnar electrode is plasma etching or wet etching.
Optionally, the gas that described plasma etching adopts is chlorine, and the solution that described wet etching adopts is the sulfuric acid solution of dilution or the mixed solution of hydrogen peroxide and sulfuric acid.
Optionally, the surface of described the first insulating barrier is concordant with the top surface of the body of columnar electrode, and the first insulating barrier contacts with the outside sidewall of columnar electrode.
Optionally, in body, behind at least one groove of formation, remove described the second photoresist layer; Printing screen or corrosion resistant plate are placed the first surface of insulating layer, and described Printing screen or corrosion resistant plate have the body of the described columnar electrode of exposure and the 4th opening of through hole and annular etched recesses; Adopt screen printing technique in the 4th opening and groove, to fill the full weld tin cream; Remove described Printing screen or corrosion resistant plate, described solder(ing) paste is carried out reflux technique, the bodies top formation metal plush copper at columnar electrode forms filling part in groove, and metal plush copper and filling part consist of groove.
Optionally, the surface of described the first insulating barrier is lower than the top surface of the body of columnar electrode, has the first annular etched recesses between the outside sidewall of the first insulating barrier and body, and the first annular etched recesses exposes the surface of part passivation layer.
Optionally, in body, behind at least one groove of formation, remove described the second photoresist layer; Printing screen or corrosion resistant plate are placed the first surface of insulating layer, and described Printing screen or corrosion resistant plate have the top surface of exposure columnar electrode body and the 5th opening of the groove in the body and the first annular etched recesses; Adopt screen printing technique in the 5th opening, groove and the first annular etched recesses, to fill the full weld tin cream; Remove described Printing screen or corrosion resistant plate, described solder(ing) paste is carried out reflux technique, bodies top at columnar electrode forms the metal plush copper, in groove, form filling part, form opotism section at the outside of body sidewall, the upper part of opotism section is connected with the metal plush copper, the lower part of opotism section is connected with the part passivation layer of columnar electrode both sides, and contact with the sidewall of the first annular etched recesses, the width of the lower part of described opotism section is greater than the width of upper part, the surface of the lower part of opotism section is lower than the surface of the first insulating barrier or with the surperficial concordant of the first insulating barrier or be higher than the surface of the first insulating barrier, the metal plush copper, filling part and opotism section consist of groove.
Optionally, also be formed with metal barrier between the body of described soldered ball and columnar electrode.
Optionally, metal barrier is the double-decker of nickel tin, the double-decker of nickeline, the double-decker of nickel gold or the double-decker of nickel and ashbury metal.
Optionally, form Seed Layer at the sidewall of described the first opening and the surface of bottom and passivation layer; Form again wiring layer on described Seed Layer surface, wiring layer is filled full the first opening again, and described again wiring layer is as the part of pad, and columnar electrode is formed on the outer again wiring layer of the first opening.
Compared with prior art, technical solution of the present invention has the following advantages:
Form the columnar electrode of described semiconductor device, described columnar electrode comprises body and is arranged in the groove of described body, the opening of groove overlaps with the top surface of columnar electrode, form soldered ball at columnar electrode, described soldered ball comprises the metal plush copper that is positioned at the columnar electrode top and the filling part of filling full described groove, soldered ball and columnar electrode consist of a kind of structure of similar latch, soldered ball is contacted by existing monoplane with columnar electrode and becomes many plane contact, soldered ball not only contacts with the top surface of columnar electrode, and contact with the inside of columnar electrode, the contact area of soldered ball and columnar electrode increases, both adhesions strengthen, so that the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly, soldered ball is difficult for coming off from columnar electrode, and groove only is arranged in body so that the body bottom can not be affected with the pad adhesion.
The degree of depth of the groove that forms in the body is 0.5% ~ 99.9% of body height, so that the filling part in the groove gos deep into the degree of depth certain in the body, the adhesion of the latch structure that soldered ball and columnar electrode consist of is stronger.
From the opening of groove to the bottom, the width of described groove reduces gradually, when filling scolding tin in groove, can not produce space (bubble) in groove, improves the stability between soldered ball and the columnar electrode.
Description of drawings
Fig. 1 is the structural representation of the semiconductor device of prior art wafer level structure;
Fig. 2 ~ Fig. 4 is the structural representation of first embodiment of the invention semiconductor device;
Fig. 5 is the schematic flow sheet of first embodiment of the invention method for forming semiconductor devices;
Fig. 6 ~ Figure 14 is the cross-sectional view of the forming process of first embodiment of the invention semiconductor device;
Figure 15 is the structural representation of second embodiment of the invention semiconductor device;
Figure 16 is the formation method flow schematic diagram of second embodiment of the invention semiconductor device;
Figure 17 ~ Figure 24 is the cross-sectional view of the forming process of second embodiment of the invention semiconductor device;
Figure 25 is the structural representation of third embodiment of the invention semiconductor device;
Figure 26 is the structural representation of fourth embodiment of the invention semiconductor device.
Embodiment
In the semiconductor device of existing wafer level CSP structure, because soldered ball only contacts with the columnar electrode upper surface, both contacts area are less, the adhesion of soldered ball and columnar electrode is relatively poor, in the time spent of doing that is subject to external force, soldered ball comes off from the surface of columnar electrode easily or produces the crack at the contact-making surface of soldered ball and columnar electrode, is unfavorable for the carrying out of follow-up packaging technology, so that packaging lost efficacy easily.
For addressing the above problem, the inventor proposes a kind of semiconductor device, columnar electrode in the described semiconductor device comprises body and is arranged in the groove of described body, the opening of groove overlaps with the top surface of columnar electrode, has soldered ball on the columnar electrode, described soldered ball comprises the metal plush copper that is positioned at the columnar electrode top and the filling part of filling full described groove, soldered ball and columnar electrode consist of a kind of structure of similar latch, soldered ball is contacted by existing monoplane with columnar electrode and becomes many plane contact, soldered ball not only contacts with the top surface of columnar electrode, and contact with the inside of columnar electrode, the contact area of soldered ball and columnar electrode increases, both adhesions strengthen, so that the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly, soldered ball is difficult for coming off from columnar electrode, and groove only is arranged in body so that the body bottom can not be affected with the pad adhesion.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.When the embodiment of the invention was described in detail in detail, for ease of explanation, schematic diagram can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit protection scope of the present invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
The first embodiment
Fig. 2 ~ Fig. 4 is the structural representation of first embodiment of the invention semiconductor device, wherein Fig. 3 and Fig. 4 be Fig. 2 along the vertical view of the profile of line of cut AB aspect, metal barrier is not shown described in Fig. 3 and Fig. 4.With reference to figure 2, described semiconductor device comprises: semiconductor base 200, be positioned at the some pads 201 on the semiconductor base 200, in the present embodiment with a pad as example; Be positioned at the passivation layer 202 on the described semiconductor base 200, described passivation layer 202 has first opening on exposed pad 201 all or part of surfaces; Be positioned at the columnar electrode on the pad 201 that described the first opening exposes, described columnar electrode has body 207 and is arranged in the groove of body 207, and the opening of described groove overlaps with the body of columnar electrode 207 top surfaces; Be positioned at the soldered ball 217 on the columnar electrode, described soldered ball 217 has the metal plush copper 216 that is positioned on columnar electrode body 207 top surfaces and the filling part 215 of filling full described groove; Be positioned at first insulating barrier 208 on described passivation layer 202 surfaces, the surface of described the first insulating barrier 208 is concordant with the top surface of body 207 or be lower than the top surface of body 207 and contact with the outside sidewall of body 207; Metal barrier 212 between the body 207 of soldered ball 217 and columnar electrode; In the body 207 of columnar electrode and the Seed Layer 203 between the pad 201.
Fill the filling part 215 that scolding tin forms soldered ball 217 in the groove in the body 207, groove shapes in the body 207 is corresponding with shape and the position of the filling part 215 of soldered ball 217 with the position, the degree of depth of described groove is 0.5% ~ 99.5% of body height, so that the filling part in the groove gos deep into the degree of depth certain in the body 207, soldered ball 217 is stronger with the adhesion of the latch structure that columnar electrode consists of, groove does not run through the body 207 of columnar electrode, so that body 207 bottoms of columnar electrode and pad 201(or Seed Layer 203) contact-making surface is contacting of bulk material and pad material bi-material, can not affect body 207 bottoms and pad 201(or Seed Layer 203) between adhesion.
From the opening of groove to the bottom, the width of described groove reduces gradually, when filling scolding tin in groove, can not produce space (bubble) in groove, improve the reliability between soldered ball 217 and the columnar electrode, the width of corresponding described filling part 215 also reduces gradually.
In a specific embodiment, the quantity of described body 207 further groove is 1, the radius of described groove is 1% ~ 99% of columnar electrode body radius, the quantity of corresponding described filling part 215 is 1, the radius of described filling part 215 is 1% ~ 99% of columnar electrode body radius, so that filling part 215 increases with body 207 contact planes, when contact area is larger, so that the sidewall of body 207 keeps certain mechanical strength, be conducive to improve the adhesion between soldered ball 217 and the columnar electrode, so that the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly, soldered ball is difficult for coming off from columnar electrode, the concrete Fig. 3 that please refer to, metal barrier is not shown among Fig. 3, has 1 filling part 215 in the body 207 of described columnar electrode, the center of described filling part and the center superposition of columnar electrode, so that filling part 215 keeps evenly with the adhesion of columnar electrode in all directions, the cross-sectional profile of the outside sidewall of described filling part 215 is shaped as circle, polygon, regular polygon or other rule or irregular figure, sidewall also can be shaped as circle for cross-sectional profile outside the described body, polygon, regular polygon or other rule or irregular figure.
In another specific embodiment, the quantity of described groove is during greater than 1, groove is independent distribution in body 207, described groove linearly distributes in body 207, matrix distribution, concentric circles distributes, donut distributes, polygon distributes, some rays or irregular distribution, described filling part 215 quantity are corresponding with quantity and the position of groove with the position, the quantity of described filling part 215 is during greater than 1, filling part 215 is independent distribution in body 207, and filling part 215 linearly distributes in body 207, matrix distribution, concentric circles distributes, donut distributes, polygon distributes or irregular distribution.Described lineal layout comprises: distribute, pass through equal angular multi straight distribution, the parallel lines distribution at body center by single lineal layout at body 207 centers, by the multi straight at body center; Described polygon distributes and comprises that regular polygon distributes and non-regular polygon distributes.The concrete Fig. 4 that please refer to, metal barrier is not shown among Fig. 3, among Fig. 4 with four filling parts 215 as example, the rectangular distribution in body of described four filling parts 215.When the quantity of filling part 215 during greater than one, so that contacted quantity of soldered ball 217 and columnar electrode further increases, contact area also further increases, thereby so that the adhesion between soldered ball 217 and the columnar electrode further increases, filling part 215 is the distribution of rule in body, so that soldered ball and columnar electrode are evenly distributed in each adhesion instantly.Need to prove that aforementioned various distribution modes refer to the figure that each groove (or each filling part) line of centres consists of.
Please refer to Fig. 5, Fig. 5 comprises for forming the schematic flow sheet of above-mentioned semiconductor device formation method:
Step S20 provides semiconductor base, and described semiconductor base has some pads;
Step S21 forms passivation layer at described semiconductor base, and described passivation layer has first opening on exposed pad surface;
Step S22 forms Seed Layer at the sidewall of described the first opening and the surface of bottom and passivation layer;
Step S23 forms the first photoresist layer on described Seed Layer surface, and described the first photoresist layer has second opening corresponding with the first opening;
Step S24 adopts electroplating technology to fill full metal in described the first opening and the second opening, forms the body of columnar electrode;
Step S25 removes described the first photoresist layer; Some Species sublayer take described columnar electrode as mask on the removal passivation layer;
Step S26 forms the first insulating barrier at described passivation layer, and the surface of described the first insulating barrier is concordant with the top surface of the body of columnar electrode, and the first insulating barrier contacts with the outside sidewall of columnar electrode;
Step S27, form the second photoresist layer at described the first surface of insulating layer, has at least one the 3rd opening that exposes the columnar electrode body surface in described the second photoresist layer, remove the body of the described columnar electrode of segment thickness along the 3rd opening etching, form at least one groove in body, described body and groove consist of columnar electrode;
Step S28 removes described the second photoresist layer; Printing screen or corrosion resistant plate are placed the first surface of insulating layer, and described Printing screen or corrosion resistant plate have the body of the described columnar electrode of exposure and the 4th opening of through hole and annular etched recesses;
Step S29 adopts screen printing technique to fill the full weld tin cream in the 4th opening and groove; Remove described Printing screen or corrosion resistant plate, described solder(ing) paste is carried out reflux technique, the bodies top formation metal plush copper at columnar electrode forms filling part in groove, and metal plush copper and filling part consist of soldered ball.
Fig. 6 ~ Figure 14 is the cross-sectional view of the forming process of first embodiment of the invention semiconductor device, below in conjunction with Fig. 6 ~ Figure 14 above-mentioned formation step is described in detail.
At first, please refer to Fig. 6, semiconductor base 200 is provided, described semiconductor base 200 has some pads 201; Form passivation layer 202 at described semiconductor base 200, described passivation layer 202 has first opening 204 on exposed pad 201 surfaces; Form Seed Layer 203 at the sidewall of described the first opening 204 and the surface of bottom and passivation layer 202.
Have some chip (not shown)s on the described semiconductor base 200, pad is continuous with corresponding chip.
Described pad 201 is made of aluminium, copper, gold or the material such as silver-colored, and described pad 201 both can be positioned at the surface of semiconductor base 200, also can be arranged in semiconductor base 200.A pad only is shown as example in the present embodiment.
Described passivation layer 202 is for the protection of the chip that forms on the semiconductor base 200, and the material of described passivation layer 202 is silicon nitride, Pyrex, phosphorosilicate glass or boron-phosphorosilicate glass or polyimides (polyimide) etc.The all or part of surface of the first opening 204 exposed pad 201 that form in the passivation layer 202.Described passivation layer 202 is one or more layers stacked structure.
Power supply layer when described Seed Layer 203 forms the columnar electrode body as follow-up plating.Described Seed Layer 203 is the stacked structure of the multilayer of chromium metal level or titanium coating or tantalum metal layer single layer structure or chromium metal level or titanium coating or tantalum metal layer and copper metal layer or gold metal layer or silver metal layer, described Seed Layer 203 forms by sputtering technology, described Seed Layer 203 can also be as diffusion impervious layer, prevent metal in the columnar electrode of follow-up formation in the first insulating barrier 202 diffusion and strengthen the adhesive force of column electrode metal and the first insulating barrier 202.
Need to prove that follow-up the first opening of mentioning all refers to form Seed Layer 203 rear remaining openings.
Then, please refer to Fig. 7 and Fig. 8, form the first photoresist layers 205 on described Seed Layer 203 surfaces, described the first photoresist layer 205 has second opening 206 corresponding with the first opening 204; At described the first opening 204 and the full metal of the second opening 206 interior fillings, form the body 207 of columnar electrode.
The formation technique of the second opening 206 is exposure and developing process, and the width of described two openings 206 equals the width of the first opening 204.The width of described the second opening 206 also can be greater than the width of the first opening 204, when the following adopted electroplating technology forms the body of columnar electrode.So that the body part of columnar electrode is positioned at Seed Layer 203 surfaces on the insulating barrier 202.
Described metal in described the first opening 204 and the 206 interior fillings of the second opening is copper, and the technique of filling metal is electroplating technology.
Then, please refer to Fig. 9, remove described the first photoresist layer 205(with reference to figure 8); Some Species sublayer 203 take described columnar electrode 207 as mask on the removal passivation layer 202.
The technique of removing described the first photoresist layer 205 is wet-etching technology or cineration technics.The technique of removing described Some Species sublayer 203 is dry etch process or wet-etching technology, and when removing the described Seed Layer 203 of part, body 207 surfaces of described columnar electrode can form mask layer.
In other embodiments of the invention, the Seed Layer of exposure also has part to be positioned at described passivation layer surface, and when the etching Seed Layer, described body and Some Species sub-layer surface also are formed with mask layer.
Then, please refer to Figure 10, form the first insulating barrier 208 on described passivation layer 202 surfaces, the surface of described the first insulating barrier 208 is concordant with the top surface of the body of columnar electrode 207, and the first insulating barrier 208 contacts with the outside sidewall of the body 207 of columnar electrode.
Described the first insulating barrier 208 is as electrical isolation layer and sealing material layer, and the material of described the first insulating barrier 208 is the organic resins such as polybenzoxazoles (polybenzoxazole, PBO) or polyimides (polyimide).
When forming the first insulating barrier 208, also comprise: to the flatening process of the first insulating layer material of being formed on passivation layer 202 surfaces, so that the body 207 of the surface of the first insulating barrier 208 that forms and columnar electrode is surperficial concordant.
In the present embodiment, form before the groove in the body that is formed on columnar electrode 207 of described the first insulating barrier 208, after preventing from the body 207 of columnar electrode, forming groove, when forming the first insulating barrier, the first insulating layer material meeting filling groove needs extra etching technics to remove first insulating layer material of filling in the groove.
Then, please refer to Figure 11, form the second photoresist layer 209 on described the first insulating barrier 208 surfaces, have at least one the 3rd opening 210 on body 207 surfaces that expose columnar electrode in described the second photoresist layer 209; Remove body 207, at least one groove 211 of formation in body 207, remaining body 207 and the groove 211 formation columnar electrodes of the described columnar electrode of segment thickness along the 3rd opening 210 etchings.
Described the 3rd opening 210 forms by exposure and developing process, and the quantity of the 3rd opening 210, position and shape are corresponding with quantity, position and the shape of the groove 211 of formation.The quantity of described the 3rd opening 210 is more than or equal to 1, and the concrete distribution of the 3rd opening 210 please refer to arranging of aforesaid semiconductor device further groove.
The technique of the described body 207 of etching is reactive ion etching process or wet-etching technology, the gas that described plasma etching industrial adopts is chlorine, and the solution that wet etching adopts is the sulfuric acid solution of dilution or mixed solution or other suitable etching solutions of hydrogen peroxide and sulfuric acid.The degree of depth of 207 grooves 211 that form is 0.5% ~ 99.5% of body height in the body, so that the filling part in the groove gos deep into the degree of depth certain in the body 207, soldered ball 217 is stronger with the adhesion of the latch structure that columnar electrode consists of.
From the opening of groove 211 to the bottom, the width of described groove 211 reduces gradually, and is follow-up when filling scolding tin in groove 211, can not produce space (bubble) in groove, improves the reliability between soldered ball 217 and the columnar electrode.The shape of the sidewall of described groove 211 can be stepped, skew lines or oblique camber line etc.During etching, large to form upper partial width by the concentration of the control size of bias power or etching solution, the groove 211 that lower partial width is less.
The bottom shape of described groove 211 is plane, cambered surface or irregular plane.
The cross section figure of described groove 211 is circle, polygon, regular polygon or other rule or irregular figure, and the cross section figure of groove described in the present embodiment is circle.
As a specific embodiment, the quantity of described body 207 further groove 211 is 1, the radius of described groove 211 is 1% ~ 99% of columnar electrode body radius, the quantity of the filling part of corresponding follow-up formation also is 1, so that filling part and body contact plane increase, when contact area is larger, so that the sidewall of body keeps certain mechanical strength, be conducive to improve the adhesion between soldered ball and the columnar electrode, so that the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly, soldered ball is difficult for coming off from columnar electrode.
In another specific embodiment, the quantity of described groove 211 is during greater than 1, groove 211 is independent distribution in body 207, described groove 211 linearly distributes in body 207, matrix distribution, concentric circles distributes, donut distributes, polygon distributes, some rays or irregular distribution, the filling part quantity of follow-up formation is corresponding with quantity and the position of groove with the position, the quantity of the filling part of follow-up formation is greater than 1, when the quantity of filling part during greater than one, so that contacted quantity of soldered ball and columnar electrode further increases, contact area also further increases, thereby so that the adhesion between soldered ball and the columnar electrode further increases, filling part is the distribution of rule in body, so that soldered ball and columnar electrode are evenly distributed in each adhesion instantly.Need to prove that aforementioned various distribution modes refer to the figure that each groove (or each filling part) line of centres consists of.
With reference to Figure 12, remove described the second photoresist layer 209(with reference to Figure 11), form metal barrier 212 at the sidewall of described groove 211 and the top surface of bottom and body 207.
Described metal barrier 212 is used for preventing that the soldered ball of follow-up formation and the body 207 of columnar electrode are in direct contact with the copper Sn intermetallic compound that contact-making surface forms fragility, and affects the reliability of solder joint.When soldered ball of the prior art directly contacts with columnar electrode, in the environment of high temperature, copper in the columnar electrode can spread in the tin of soldered ball rapidly, form the copper Sn intermetallic compound at columnar electrode and soldered ball contact interface, because copper Sn intermetallic compound fragility is larger, can reduce the mechanical strength of contact interface, cause solder joint at intermetallic compound and the borderline damage of scolder or cracking, the reliability of impact welding.
Described metal barrier 212 is the double-decker of nickel tin, the double-decker of nickeline, the double-decker of the double-decker of nickel gold or nickel and ashbury metal, the tin layer, silver layer, gold layer or ashbury metal layer are formed on the surface of nickel dam, be used for preventing the oxidation of nickel, in the present embodiment, described metal barrier 212 be the double-decker of nickel tin, nickel is conducive to the diffusion that prevents that copper is outside, even have part copper and tin in metal barrier 212, to spread, ambrose alloy compound at the interface formation of metal barrier 212 and columnar electrode has higher intensity and good pyroelectricity, higher intensity at the nickel tin compound of the interface formation of metal barrier 212 and soldered ball, hardness is high, therefore surface uniform can not bring the mechanical strength of existing contact interface to reduce and the problem such as welding damage.
The thickness of metal barrier 212 prevents that less than the radius of groove 211 metal barrier from stopping up groove 211.
The formation technique of described metal barrier 212 is the selective chemical depositing process, and the selective chemical depositing process can optionally form metal barrier 212 at metallic surface.
When carrying out the selective chemical depositing process, can adopt ultrasonic oscillation, prevent in the process of chemical plating, when chemical plating solution enters through hole 211, in through hole, form bubble, affect the formation of metal barrier 212.Described hyperacoustic frequency is greater than 20KHz.
When carrying out the selective chemical depositing process, can apply the pressure greater than 1 standard atmospheric pressure in the described chemical plating chamber, so that chemical plating solution has a pressure, chemical plating solution more easily enters in the through hole 211, can not form bubble in through hole.
In other embodiments of the invention, when described chemical plating does not have selectivity, form mask layer at columnar electrode after the chemical plating, then take described mask layer as mask, remove the metal barrier on the first insulating barrier outside the columnar electrode.
In other embodiments of the invention, described metal barrier can adopt sputtering technology to form.
Then, please refer to Figure 13, Printing screen or corrosion resistant plate 213 are placed described the first insulating barrier 208 surfaces, and described Printing screen or corrosion resistant plate 213 have body 207 top surfaces that expose columnar electrode and the groove 211(in the body with reference to Figure 12) the 4th opening; Adopt screen printing technique in the 4th opening and groove, to fill full weld tin cream 214.
Concrete, the material of described solder(ing) paste 214 is tin or ashbury metal.
At last, please refer to Figure 14, remove described Printing screen or corrosion resistant plate 213(with reference to Figure 13), to described solder(ing) paste 214(with reference to Figure 13) carry out reflux technique, metal plush copper 216 is formed on the top at the body 207 of columnar electrode, at groove 211(with reference to Figure 12) in form filling part 215, metal plush copper 216 and filling part 215 consist of soldered balls 217.
Described reflux technique comprises Technology for Heating Processing.
The second embodiment
With reference to Figure 15, Figure 15 is the structural representation of second embodiment of the invention semiconductor device, comprising: semiconductor base 300 has some pads 301 on the described semiconductor base 300; Be positioned at the passivation layer 302 on the described semiconductor base 300, described passivation layer 302 has the first opening that exposes described pad 301 all or part of surfaces; Be positioned at the columnar electrode on the pad 301 of described the first opening, described columnar electrode comprises body 307 and is arranged in the groove of body 307 that the opening of described groove is concordant with the top surface of body 307; Be positioned at the first insulating barrier 308 on the described passivation layer 302, the surface of described the first insulating barrier 308 is lower than the top surface of the body 307 of columnar electrode, has the first annular etched recesses between the body outside sidewall of the first insulating barrier 308 and columnar electrode; Be positioned at the metal plush copper 320 at body 307 tops of described columnar electrode, fill the filling part 319 of described groove, be positioned at the opotism section 318 on the outside sidewall of columnar electrode body 307, the upper part of opotism section 318 is connected with metal plush copper 320, the lower part of opotism section 318 is connected with the part passivation layer 302 of columnar electrode both sides, and contact with the sidewall of the first annular etched recesses, the width of the lower part of described opotism section is greater than the width of upper part, the surface of the lower part of opotism section is lower than the surface of the first insulating barrier 308 or with the surperficial concordant of the first insulating barrier 308 or be higher than the surface of the first insulating barrier, described metal plush copper 320, filling part 319 and opotism section 318 consist of soldered ball 321; Also comprise: in the body 307 of columnar electrode and the Seed Layer 303 between the pad 301, described Seed Layer 303 parts are positioned at passivation layer 302 surfaces of the first annular etched recesses; Metal barrier 313 between the body 307 of soldered ball 321 and columnar electrode, described metal barrier 313 parts are arranged in the Seed Layer surface of the first annular etched recesses.
The quantity of the groove in the present embodiment in the body 307, size and arranging etc. please refer to the associated description of first embodiment of the invention, do not repeat them here.
The difference of present embodiment and the first embodiment is, described soldered ball 321 also comprises the opotism section 318 of opotism section " L " type of body 307 outside sidewalls that are positioned at columnar electrode, than the first embodiment of the present invention, soldered ball 321 is except with the inside side walls of groove in the top surface of body 307 and the body 307 contacts, also with the outside sidewall contact of body 307, so that quantity and the contact area of the contact-making surface of soldered ball 321 and columnar electrode further increase, in the time spent of doing that is subject to external force, so that the active force that soldered ball is subject to further disperses, improved the conjugation between soldered ball and the columnar electrode.
The opotism section 318 of " L " type and the sidewall of the first annular etched recesses, passivation layer 302(in the outside sidewall of body 307 (perhaps body 307 outside side wall upper part are divided metal barrier layer 313) and the first annular etched recesses or the part metals barrier layer 313 on the passivation layer 302 in the first annular etched recesses) three faces contact, the width of 318 times parts of opotism section of " L " type is greater than the width of upper part, has the function that is similar to bracing frame, the opotism section of " L " type is so that the acceptable lateral external forces that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly, and soldered ball is difficult for coming off from columnar electrode.
Please refer to Figure 16, Figure 16 comprises for forming the formation method flow schematic diagram of above-mentioned semiconductor device:
Step S30 provides semiconductor base, and described semiconductor base has some pads;
Step S31 forms passivation layer at described semiconductor base, and described passivation layer has first opening on exposed pad surface;
Step S32 forms Seed Layer at the sidewall of described the first opening and the surface of bottom and passivation layer
Step S33 forms the first photoresist layer on described Seed Layer surface, and described the first photoresist layer has second opening corresponding with the first opening;
Step S34 adopts electroplating technology to fill full metal in described the first opening and the second opening, forms the body of columnar electrode;
Step S35 removes described the first photoresist layer; Remove the Some Species sublayer on the passivation layer;
Step S36, form the first insulating barrier at described passivation layer, the surface of described the first insulating barrier is lower than the top surface of the body of columnar electrode, has the first annular etched recesses between the outside sidewall of the first insulating barrier and body, and the first annular etched recesses exposes the surface of part passivation layer;
Step S37, form the second photoresist layer at described the first surface of insulating layer, has at least one the 3rd opening that exposes the columnar electrode body surface in described the second photoresist layer, remove the body of the described columnar electrode of segment thickness along the 3rd opening etching, form at least one groove in body, described body and groove consist of columnar electrode;
Step S38 removes described the second photoresist layer; Printing screen or corrosion resistant plate are placed the first surface of insulating layer, and described Printing screen or corrosion resistant plate have the top surface of exposure columnar electrode body and the 5th opening of the groove in the body and the first annular etched recesses;
Step S39 adopts screen printing technique to fill the full weld tin cream in the 5th opening, groove and the first annular etched recesses; Remove described Printing screen or corrosion resistant plate, described solder(ing) paste is carried out reflux technique, bodies top at columnar electrode forms the metal plush copper, in groove, form filling part, form opotism section at the outside of body sidewall, the upper part of opotism section is connected with the metal plush copper, the lower part of opotism section is connected with the part passivation layer of columnar electrode both sides, and contact with the sidewall of the first annular etched recesses, the width of the lower part of described opotism section is greater than the width of upper part, the surface of the lower part of opotism section is lower than the surface of the first insulating barrier or surperficial concordant with the first insulating barrier, metal plush copper, filling part and opotism section consist of soldered ball.
Figure 17 ~ Figure 24 is the cross-sectional view of the forming process of second embodiment of the invention semiconductor device, below in conjunction with Figure 17 ~ Figure 24 the formation step of above-mentioned semiconductor device is described in detail.
At first, with reference to Figure 17, provide semiconductor base 300, have some pads 301 on the described semiconductor base 300; Form passivation layer 302 at described semiconductor base 300, described passivation layer 302 has the first opening that exposes all or part of pad 301 surfaces; Bond pad surface in the first opening forms the body 307 of columnar electrode.
Also have Seed Layer 303 between described body 307 and the pad, Seed Layer 303 parts are positioned at passivation layer 302 surfaces near body 303.Take Seed Layer as conductive layer, after adopting electroplating technology to form the body 307 of columnar electrode, need to form the surperficial patterned photoresist layer of body 307 and Some Species sublayer (Seed Layer on passivation layer 302 surfaces of close body 307) that covers described columnar electrode, then take patterned photoresist layer as mask, remove passivation layer 302 surfaces away from the Some Species sublayer of body 307, then remove patterned photoresist layer, so that remaining Seed Layer 303 parts between described body 307 and pad, partly are positioned at passivation layer 302 surfaces near body 303.
Above-mentioned concrete forming process and associated description please refer to the first embodiment of the present invention, do not repeat them here.Need to prove, in the follow-up present embodiment with the semiconductor device of the first embodiment in the formation technique of analog structure and material etc. all do not do detailed description, specifically please refer to the first embodiment of the present invention.
Then, please refer to Figure 18, form the first insulating barrier 308 on described passivation layer 302 surfaces, the surface of described the first insulating barrier 308 is lower than the surface of body 307, has the first annular etched recesses 309 between body 307 outside sidewalls of the first insulating barrier 308 and columnar electrode.The described first annular etched recesses 309 is by photoetching and etching technics or the formation of other suitable technique.
Then, please refer to Figure 19 and 20, form the second photoresist layer 310 on described the first insulating barrier 308 surfaces, have at least one the 3rd opening 311 that exposes columnar electrode body 307 surfaces in described the second photoresist layer 310; Remove body 307, at least one groove 312 of formation in body, described body 307 and the groove 312 formation columnar electrodes of the described columnar electrode of segment thickness along the 3rd opening 311 etchings.
Then, please refer to Figure 21, remove described the second photoresist layer 310(with reference to Figure 20); Sidewall and bottom, body 307 top surfaces and outside sidewall in body 307 further groove 312 form metal barrier 313, and described metal barrier 313 parts are positioned at Seed Layer 303 surfaces of the first annular etched recesses 309.
Then, please refer to Figure 22, Printing screen or corrosion resistant plate 315 are placed described the first insulating barrier 308 surfaces, and described Printing screen or corrosion resistant plate 315 have the top surface of exposure columnar electrode body 307 and the 5th opening 316 of the groove in the body 312 and the first annular etched recesses.
At last, please refer to Figure 23 and Figure 24, adopt screen printing technique in the 5th opening 316, groove 312 and the first annular etched recesses, to fill full weld tin cream 317; Remove described Printing screen or corrosion resistant plate 315, described solder(ing) paste 317 is carried out reflux technique, metal plush copper 320 is formed on body 307 tops at columnar electrode, in groove, form filling part 319, form opotism section 318 at the outside of body 307 sidewall, the upper part of opotism section 318 is connected with metal plush copper 320, the lower part of opotism section 318 is connected with the metal barrier 313 of columnar electrode both sides, and contact with the sidewall of the first annular etched recesses, the width of the lower part of described opotism section 318 is greater than the width of upper part, the surface of the lower part of opotism section 318 is lower than the surface of the first insulating barrier 308 or with the surperficial concordant of the first insulating barrier 308 or be higher than the surface of the first insulating barrier 308, metal plush copper 320, filling part 319 and opotism section 318 consist of soldered ball 321.
When carrying out reflux technique, the solder(ing) paste at columnar electrode top forms metal plush copper 320 under capillary effect, the columnar electrode top surface is higher than the surface of the first insulating barrier 308, the solder(ing) paste of the outside sidewall mid portion of body 307 only with plane contact of body sidewall, the part solder(ing) paste also can the direction to metal plush copper 320 converge under capillary effect, and the solder(ing) paste in the first annular etched recesses of body 307 outside lower sidewall and the sidewall of the first annular etched recesses, metal barrier 313 all contacts with 311 3 faces in part metals barrier layer on the passivation layer 302 on body 307 outside sidewall sections, when refluxing, the solder(ing) paste that the absorption affinity of the contact-making surface of the solder(ing) paste in the part metals barrier layer 313 on the pad 301 and the first annular etched recesses can be offset in part the first annular etched recesses points to the partial tension of metal plush copper 320 directions and the part surface tension force of body 307 directions of pointing to columnar electrode, thereby so that forms the opotism section 318 of " L " type on body 307 outside sidewalls.
The 3rd embodiment
With reference to Figure 25, Figure 25 is the structural representation of third embodiment of the invention semiconductor device, comprising: semiconductor base 500 has some pads 501 on the described semiconductor base 500; Be positioned at the passivation layer 503 on the described semiconductor base 500, described passivation layer 503 has partly or entirely first opening on surface of exposed pad 501; Be positioned at the sidewall of the first opening and the Seed Layer 504 on bottom and part passivation layer 503 surfaces; Be positioned at the again wiring layer 505 on described Seed Layer 504 surfaces, wiring layer is filled full the first opening again, and described again wiring layer 505 is as the part of pad 501; Be positioned at the columnar electrode on outer again wiring layer 505 surfaces of the first opening, described columnar electrode has body 511 and is arranged in the groove of body 511, and the opening of described groove overlaps with the body of columnar electrode 511 top surfaces; Be positioned at the soldered ball 510 on the columnar electrode, described soldered ball 510 has the metal plush copper 509 that is positioned on columnar electrode body 511 top surfaces and the filling part 508 of filling full described groove; Be positioned at described passivation layer 503 and second insulating barrier 506 on wiring layer 505 surfaces again, the surface of described the second insulating barrier 506 contacts with the surperficial concordant of body 511 and with the outside sidewall of body 511; Metal barrier 507 between the body 511 of soldered ball 510 and columnar electrode.
Present embodiment, than the first embodiment, has again wiring layer 505, wiring layer 505 is as the part of pad 501 again, columnar electrode on wiring layer 505 again, than directly forming columnar electrode at pad, wiring layer 505 can be realized the again distribution of contact point again, is conducive to improve the integrated level of packaging.
The formation technique of described again wiring layer 505 is for electroplating, and the material of wiring layer 505 is copper again, and the detailed process that forms at wiring layer is: at first in the sidewall of the first opening and bottom and passivation layer surface form Seed Layer; Then form photoresist layer on Seed Layer surface, described photoresist layer has the opening that exposes the Seed Layer surface, and the width of opening and position are corresponding with width and the position of again wiring layer to be formed; Then adopt electroplating technology, in described opening, fill full metal and form again wiring layer 505, and described again wiring layer 505 is filled full the first opening; Then remove photoresist layer.
After forming wiring layer 505, then the surface of the again wiring layer outside the first opening forms the body 511 of columnar electrode again, then take described again wiring layer 505 as mask, removes unnecessary Seed Layer on the passivation layer 503.
About the formation of body 511 further groove with arrange, the formation of soldered ball 510 and the relevant descriptions such as formation of the second insulating barrier 506, please refer to the first embodiment of the present invention, do not repeat them here.
The 4th embodiment
With reference to Figure 26, Figure 26 is the structural representation of fourth embodiment of the invention semiconductor device, comprising: semiconductor base 600 has some pads 601 on the described semiconductor base 600; Be positioned at the passivation layer 603 on the described semiconductor base 600, described passivation layer 603 has partly or entirely first opening on surface of exposed pad 601; Be positioned at the sidewall of the first opening and the Seed Layer 604 on bottom and part passivation layer 603 surfaces; Be positioned at the again wiring layer 605 on described Seed Layer 604 surfaces, wiring layer 605 is filled full the first opening again, and described again wiring layer 605 is as the part of pad 601; Be positioned at the columnar electrode on outer again wiring layer 605 surfaces of the first opening, described columnar electrode has body 612 and is arranged in the groove of body 612, and the opening of described groove overlaps with the body of columnar electrode 612 top surfaces; Be positioned at passivation layer 603 and part and be lower than the top surface of body 612 in the surface of the second insulating barrier 606, the second insulating barriers 606 on wiring layer 605 surfaces again, have the second annular etched recesses between the sidewall of the second insulating barrier 606 and body 612; Be positioned at the metal plush copper 610 at body 612 tops of described columnar electrode, fill the filling part 609 of body 612 further groove, be positioned at the opotism section 608 on the outside sidewall of body 612, the upper part of opotism section 608 is connected with metal plush copper 610, the lower part of opotism section 608 and the part of columnar electrode both sides again wiring layer 605 are connected, and contact with the sidewall of the second annular etched recesses, the width of the lower part of described opotism section 608 is greater than the width of upper part, the surface of the lower part of opotism section 608 is lower than the surface of the second insulating barrier 606 or with the surperficial concordant of the second insulating barrier 606 or be higher than the surface of the second insulating barrier 606, described metal plush copper 610, filling part 609 and opotism section 608 consist of soldered ball 611; Also comprise: the metal barrier 607 between the body 612 of soldered ball 611 and columnar electrode, described metal barrier 607 parts are positioned at again wiring layer 605 surfaces of the second annular etched recesses.
Present embodiment, than the second embodiment, has again wiring layer 605, wiring layer 605 is as the part of pad 601 again, columnar electrode on wiring layer 605 again, than directly forming columnar electrode at pad, wiring layer 605 can be realized the again distribution of contact point again, is conducive to improve the integrated level of packaging.
The forming process of above-mentioned each structure and associated description etc. please refer to the third embodiment of the present invention and the second embodiment, do not repeat them here.
To sum up, the formation method of the semiconductor device of the embodiment of the invention, form the columnar electrode of described semiconductor device, described columnar electrode comprises body and is arranged in the groove of described body, the opening of groove overlaps with the top surface of columnar electrode, form soldered ball at columnar electrode, described soldered ball comprises the metal plush copper that is positioned at the columnar electrode top and the filling part of filling full described groove, soldered ball and columnar electrode consist of a kind of structure of similar latch, soldered ball is contacted by existing monoplane with columnar electrode and becomes many plane contact, soldered ball not only contacts with the top surface of columnar electrode, and contact with the inside of columnar electrode, the contact area of soldered ball and columnar electrode increases, both adhesions strengthen, so that the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly, soldered ball is difficult for coming off from columnar electrode, and groove only is arranged in body so that the body bottom can not be affected with the pad adhesion.
The degree of depth of the groove that forms in the body is 0.5% ~ 99.9% of body height, so that the filling part in the groove gos deep into the degree of depth certain in the body, the adhesion of the latch structure that soldered ball and columnar electrode consist of is stronger.
From the opening of groove to the bottom, the width of described groove reduces gradually, when filling scolding tin in groove, can not produce space (bubble) in groove, improves the stability between soldered ball and the columnar electrode.
Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (16)
1. the formation method of a semiconductor device is characterized in that, comprising:
Semiconductor base is provided, and described semiconductor base has some pads;
Form passivation layer at described semiconductor base, described passivation layer has first opening on exposed pad surface;
Formation columnar electrode on described pad, described columnar electrode comprise body and are arranged in the groove of described body that the opening of groove overlaps with the top surface of columnar electrode;
Form soldered ball at described columnar electrode, described soldered ball comprises the metal plush copper that is positioned at the columnar electrode top and the filling part of filling full described groove.
2. the formation method of the formation method of semiconductor device as claimed in claim 1 is characterized in that, the degree of depth of described groove is 0.5% ~ 99.9% of body height.
3. the formation method of semiconductor device as claimed in claim 1 is characterized in that, the quantity of described groove is 1, and the radius of described groove is 1% ~ 99% of columnar electrode body radius.
4. the formation method of semiconductor device as claimed in claim 1 is characterized in that, the quantity of described groove is greater than 1, and groove is independent distribution in body.
5. the formation method of semiconductor device as claimed in claim 4 is characterized in that, the linearly distribution in body of described groove, matrix distribution, concentric circles distribute, donut distributes, polygon distributes or irregular distribution.
6. such as the formation method of claim 3 or 4 described semiconductor device, it is characterized in that the formation method of described columnar electrode is: form Seed Layer at the sidewall of described the first opening and the surface of bottom and passivation layer; Form the first photoresist layer on described Seed Layer surface, described the first photoresist layer has second opening corresponding with the first opening; Adopt electroplating technology in described the first opening and the second opening, to fill full metal, form the body of columnar electrode; Remove described the first photoresist layer; Some Species sublayer take described columnar electrode as mask on the removal passivation layer; Form the first insulating barrier at described passivation layer; Form the second photoresist layer at described the first surface of insulating layer, have at least one the 3rd opening that exposes the columnar electrode body surface in described the second photoresist layer; Remove body, at least one groove of formation in body, described body and the groove formation columnar electrode of the described columnar electrode of segment thickness along the 3rd opening etching.
7. the formation method of the formation method of semiconductor device as claimed in claim 6 is characterized in that, from the opening of groove to the bottom, the width of described groove reduces gradually.
8. the formation method of semiconductor device as claimed in claim 6 is characterized in that, the material of the body of described columnar electrode is copper, and the technique of the body of etching columnar electrode is plasma etching or wet etching.
9. the formation method of semiconductor device as claimed in claim 8 is characterized in that, the gas that described plasma etching adopts is chlorine, and the solution that described wet etching adopts is the sulfuric acid solution of dilution or the mixed solution of hydrogen peroxide and sulfuric acid.
10. the formation method of semiconductor device as claimed in claim 6 is characterized in that, the surface of described the first insulating barrier is concordant with the top surface of the body of columnar electrode, and the first insulating barrier contacts with the outside sidewall of columnar electrode.
11. the formation method of semiconductor device as claimed in claim 10 is characterized in that, behind at least one groove of formation, removes described the second photoresist layer in body; Printing screen or corrosion resistant plate are placed the first surface of insulating layer, and described Printing screen or corrosion resistant plate have the body of the described columnar electrode of exposure and the 4th opening of through hole and annular etched recesses; Adopt screen printing technique in the 4th opening and groove, to fill the full weld tin cream; Remove described Printing screen or corrosion resistant plate, described solder(ing) paste is carried out reflux technique, the bodies top formation metal plush copper at columnar electrode forms filling part in groove, and metal plush copper and filling part consist of groove.
12. the formation method of semiconductor device as claimed in claim 6, it is characterized in that, the surface of described the first insulating barrier is lower than the top surface of the body of columnar electrode, have the first annular etched recesses between the outside sidewall of the first insulating barrier and body, the first annular etched recesses exposes the surface of part passivation layer.
13. the formation method of semiconductor device as claimed in claim 12 is characterized in that, behind at least one groove of formation, removes described the second photoresist layer in body; Printing screen or corrosion resistant plate are placed the first surface of insulating layer, and described Printing screen or corrosion resistant plate have the top surface of exposure columnar electrode body and the 5th opening of the groove in the body and the first annular etched recesses; Adopt screen printing technique in the 5th opening, groove and the first annular etched recesses, to fill the full weld tin cream; Remove described Printing screen or corrosion resistant plate, described solder(ing) paste is carried out reflux technique, bodies top at columnar electrode forms the metal plush copper, in groove, form filling part, form opotism section at the outside of body sidewall, the upper part of opotism section is connected with the metal plush copper, the lower part of opotism section is connected with the part passivation layer of columnar electrode both sides, and contact with the sidewall of the first annular etched recesses, the width of the lower part of described opotism section is greater than the width of upper part, the surface of the lower part of opotism section is lower than the surface of the first insulating barrier or with the surperficial concordant of the first insulating barrier or be higher than the surface of the first insulating barrier, the metal plush copper, filling part and opotism section consist of groove.
14. the formation method such as claim 11 or 13 described semiconductor device is characterized in that, also is formed with metal barrier between the body of described soldered ball and columnar electrode.
15. the formation method of semiconductor device as claimed in claim 14 is characterized in that, metal barrier be the double-decker of nickel tin, the double-decker of nickeline, the double-decker of nickel gold or the double-decker of nickel and ashbury metal.
16. the formation method of semiconductor device as claimed in claim 1 is characterized in that, forms Seed Layer at the sidewall of described the first opening and the surface of bottom and passivation layer; Form again wiring layer on described Seed Layer surface, wiring layer is filled full the first opening again, and described again wiring layer is as the part of pad, and columnar electrode is formed on the outer again wiring layer of the first opening.
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| CN201210444474.6A CN102931099B (en) | 2012-11-08 | 2012-11-08 | The formation method of semiconductor devices |
| PCT/CN2013/086214 WO2014071815A1 (en) | 2012-11-08 | 2013-10-30 | Semiconductor device and manufacturing method thereof |
| US14/440,872 US9548282B2 (en) | 2012-11-08 | 2013-10-30 | Metal contact for semiconductor device |
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| CN201210444474.6A CN102931099B (en) | 2012-11-08 | 2012-11-08 | The formation method of semiconductor devices |
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