CN102969344A - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- CN102969344A CN102969344A CN201210444357XA CN201210444357A CN102969344A CN 102969344 A CN102969344 A CN 102969344A CN 201210444357X A CN201210444357X A CN 201210444357XA CN 201210444357 A CN201210444357 A CN 201210444357A CN 102969344 A CN102969344 A CN 102969344A
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- columnar electrode
- insulating barrier
- opening
- semiconductor device
- opotism
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
Abstract
A semiconductor device comprises a semiconductor substrate, a first insulation layer, columnar electrodes and solder balls. The semiconductor substrate is provided with a plurality of pads; the first insulation layer is arranged on the semiconductor substrate, and the first insulation layer is provided with first openings exposing the pad surfaces; the columnar electrodes are placed on the pads and comprise bodies and through holes penetrating through the bodies, and the through holes expose the pad surfaces; and the solder balls are placed on the columnar electrodes and comprise metal protruding heads at tops of the columnar electrodes and filling portions filling the through holes. The solder balls and the columnar electrodes form structures similar to bolts, so that the binding force between the solder balls and the columnar electrodes is improved.
Description
Technical field
The present invention relates to the semiconductor packages field, particularly a kind of semiconductor device that improves soldered ball and columnar electrode adhesion.
Background technology
Wafer-level package (Chip Scale Package, CSP) is as the chip encapsulation technology of latest generation, the advantages such as the product of CSP encapsulation has that volume is little, good electrical property and good in thermal property.Wafer level CSP (WCSP) is a kind of as wafer-level package, is to encapsulate at disk first, and tests with the form of disk that burn-in screen is divided into disk thereafter single CSP circuit again.
Publication number is the semiconductor device that discloses a kind of wafer level CSP structure in the Chinese patent of CN1630029A, please refer to Fig. 1, and comprising: semiconductor base 11 has pad 12 on the described semiconductor base 11; Be positioned at the passivation layer 14 on described semiconductor base 11 surfaces, described passivation layer 14 has the opening on exposed pad 12 surfaces; Be positioned at the again wiring layer 16 of part passivation layer 14 surfaces and opening, wiring layer 16 is connected with pad 12 again; Be positioned at the columnar electrode 17 on outer again wiring layer 16 surfaces of described opening; Cover the insulating barrier 20 on described again wiring layer 16 and part passivation layer 14 surfaces, the surface of insulating barrier 20 is surperficial concordant with columnar electrode 17; Be positioned at the soldered ball 21 on columnar electrode 17 surfaces.
Soldered ball in the existing semiconductor device comes off from the surface of columnar electrode easily.
Summary of the invention
The problem that the present invention solves is to have improved a kind of semiconductor device, has improved conjugation between soldered ball and the columnar electrode.
For addressing the above problem, technical solution of the present invention provides a kind of semiconductor device, comprising: a kind of semiconductor device, it is characterized in that, and comprising: semiconductor base, described semiconductor base has some pads; Be positioned at the first insulating barrier on the semiconductor base, described the first insulating barrier has the first opening that exposes described bond pad surface; Be positioned at the columnar electrode on the described pad, described columnar electrode comprises body and runs through the through hole of described body, described through hole exposed pad surface; Be positioned at the soldered ball on the described columnar electrode, described soldered ball comprises the metal plush copper that is positioned at the columnar electrode top and the filling part of filling full described through hole.
Optionally, the quantity that is arranged in the through hole of described body is 1, the ratio of the radius of the through hole of described columnar electrode and the width of body be 1/10 ~ 10/1.
Optionally, the cross sectional shape of described body is the polygon of annulus or hollow.
Optionally, have some seams at quarters that equal angles distributes that are on the body of described columnar electrode, described quarter, seam was divided into some independently sub-bodies that equal angles distributes that are with body.
Optionally, the sectional view of described sub-body is a section of annulus.
Optionally, described filling part is also filled the seam at quarter between the completely sub-body.
Optionally, be arranged in the quantity of through hole of described body greater than 1, described through hole independent distribution in body.
Optionally, described through hole linearly distribution in body, matrix distribution, concentric circles distribute, donut distributes, polygon distributes or irregular distribution.
Optionally, the surface of the first insulating barrier is concordant with the top surface of columnar electrode, and the width of described the first opening equals the diameter of columnar electrode, and the sidewall of the first opening contacts with the outer surface of columnar electrode.
Optionally, the surface of the first insulating barrier is lower than the top surface of columnar electrode, and the width of described the first opening is greater than the diameter of columnar electrode.
Optionally, described soldered ball also has the opotism section on the outside sidewall that is positioned at the columnar electrode body, the upper part of opotism section is connected with the metal plush copper, the lower part of opotism section is connected with the part pad of columnar electrode both sides, and contact with the sidewall of the first opening, the width of the lower part of described opotism section is greater than the width of upper part, and the surface of the lower part of opotism section is lower than the surface of the first insulating barrier or with the surperficial concordant of the first insulating barrier or be higher than the surface of the first insulating barrier.
Optionally, between the bodies top surface of the metal plush copper of described soldered ball and columnar electrode, also has metal barrier between the inside side walls of filling part and body and between the outside sidewall of opotism section and body.
Optionally, described metal barrier is the double-decker of nickel tin, the double-decker of nickeline, the double-decker of nickel gold or the double-decker of nickel and ashbury metal.
Optionally, be positioned at the bottom of described the first opening and the again wiring layer of sidewall and part the first surface of insulating layer, described in the part of wiring layer as pad, described columnar electrode is positioned at the outer again wiring layer surface of the first opening.
Optionally, be positioned at the second insulating barrier of described again wiring layer and the first surface of insulating layer, described the second insulating barrier has second opening on the described again wiring layer of expose portion surface, and columnar electrode is arranged in the second opening.
Optionally, the surface of described the second insulating barrier is concordant with the top surface of columnar electrode, and the width of described the second opening equals the diameter of columnar electrode, and the sidewall of the second opening contacts with the outer surface of columnar electrode.
Optionally, the surface of described the second insulating barrier is lower than the lower surface of columnar electrode, and the width of described the second opening is greater than the diameter of columnar electrode.
Optionally, described soldered ball also has the opotism section on the outside sidewall that is positioned at the columnar electrode body, the upper part of opotism section is connected with the metal plush copper, the lower part of opotism section and the part of columnar electrode both sides again wiring layer are connected, and contact with the sidewall of the second opening, the width of the lower part of described opotism section is greater than the width of upper part, and the surface of the lower part of opotism section is lower than the surface of the second insulating barrier or with the surperficial concordant of the second insulating barrier or be higher than the surface of the second insulating barrier.
Compared with prior art, technical solution of the present invention has the following advantages:
The semiconductor device of the embodiment of the invention, columnar electrode in the described semiconductor device comprises body and is arranged in described body and runs through the through hole of described body, soldered ball on the columnar electrode comprises the metal plush copper that is positioned at columnar electrode bodies top surface and the filling part of filling described through hole, soldered ball and columnar electrode consist of a kind of structure of similar latch, therefore soldered ball not only contacts with the top surface of columnar electrode, and contact with the inside of columnar electrode, soldered ball becomes multilevel contact with contacting from the contact of existing monoplane of columnar electrode, soldered ball is in the time spent of doing that is subject to external force, the Surface Contact face of soldered ball and columnar electrode can disperse the part active force, the contact-making surface of the body of the filling part of soldered ball and columnar electrode can disperse most active force simultaneously, thereby improve the conjugation between soldered ball and the columnar electrode, the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly.
Further, when the quantity of described through hole is 1, the ratio of the radius of described through hole and the width of body be 1/10 ~ 10/1, so that the body of columnar electrode has certain width, guarantee the mechanical strength of body, and make the body lower surface of columnar electrode and pad that certain contact area be arranged, make the certain adhesion of maintenance between the body of columnar electrode and the pad, prevent from forming the slit between the body of columnar electrode and the pad, and increase contact resistance or cause and open circuit.
Further, the quantity of described through hole is greater than 1, the corresponding scolding tin of filling in through hole forms the filling part of soldered ball also greater than 1, soldered ball embeds in the body of columnar electrode by a plurality of filling parts, increased the contact area of soldered ball and columnar electrode, the bolt rod of the latch structure that soldered ball and columnar electrode consist of is a plurality of, improved the adhesion between soldered ball and the columnar electrode, and forming filling part in through hole and the through hole linearly distributes, matrix distribution, concentric circles distributes, donut distributes, arranging of the rules such as polygon distribution, so that the adhesion of all directions of soldered ball and columnar electrode is more even, the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) further strengthens, and soldered ball is difficult for coming off from columnar electrode.
Further, described soldered ball also comprises opotism section, three faces in part metals barrier layer on sidewall, base side wall part metal barrier and the pad of opotism section and the first opening contact, the width of opotism subordinate part is greater than the width of upper part, so that opotism section is " L " type, opotism section has the function that is similar to bracing frame at the outside of the body of columnar electrode sidewall, the opotism section of " L " type is so that the acceptable lateral external forces that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly, and soldered ball is difficult for coming off from columnar electrode.
Description of drawings
Fig. 1 is the structural representation of semiconductor device in the prior art;
Fig. 2 is the schematic flow sheet of the formation method of first embodiment of the invention semiconductor device;
Fig. 3 ~ Figure 15 is the structural representation of the forming process of first embodiment of the invention semiconductor device;
Figure 16 is the schematic flow sheet of the formation method of second embodiment of the invention semiconductor device;
Figure 17 ~ Figure 28 is the structural representation of the forming process of second embodiment of the invention semiconductor device;
Figure 29 is the schematic flow sheet of third embodiment of the invention method for forming semiconductor devices;
Figure 30 ~ Figure 40 is the structural representation of the forming process of third embodiment of the invention semiconductor device.
Embodiment
In the semiconductor device of existing wafer level CSP structure, because soldered ball only contacts with the columnar electrode upper surface, both contacts area are less, the adhesion of soldered ball and columnar electrode is relatively poor, in the time spent of doing that is subject to external force, soldered ball comes off from the surface of columnar electrode easily or produces the crack at the contact-making surface of soldered ball and columnar electrode, is unfavorable for the carrying out of follow-up packaging technology, so that packaging lost efficacy easily.
For addressing the above problem, the inventor proposes a kind of semiconductor device, columnar electrode in the described semiconductor device comprises body and is arranged in described body and runs through the through hole of described body, soldered ball on the columnar electrode comprises the metal plush copper that is positioned at columnar electrode bodies top surface and the filling part of filling described through hole, soldered ball and columnar electrode consist of a kind of structure of similar latch, therefore soldered ball not only contacts with the top surface of columnar electrode, and contact with the inside of columnar electrode, the contact area of soldered ball and columnar electrode increases, both adhesions strengthen, so that the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly, soldered ball is difficult for coming off from columnar electrode.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.When the embodiment of the invention was described in detail in detail, for ease of explanation, schematic diagram can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit protection scope of the present invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
The first embodiment
With reference to figure 2, Fig. 2 is the schematic flow sheet of the formation method of first embodiment of the invention semiconductor device, comprises step:
Step S21 provides semiconductor base, has some pads on the described semiconductor base;
Step S22 forms the first insulating barrier at described semiconductor base, and described the first insulating barrier has the first opening that exposes described pad;
Step S23 forms Seed Layer at the sidewall of described the first opening and the surface of bottom and the first insulating barrier;
Step S24 forms the first photoresist layer on the surface of described Seed Layer, and described the first photoresist layer is filled full the first opening; The first photoresist layer in graphical the first opening, form the groove that exposes the Seed Layer surface, remaining part photoresist is as the first photoresist layer column in the groove, the first photoresist layer column quantity is more than or equal to one, the diameter of described groove equals the diameter of the first opening, and the lower partial sidewall of groove overlaps with the sidewall of the first opening;
Step S25 fills metal in groove, form the body of columnar electrode, and the top surface of described body is surperficial concordant with the first insulating barrier;
Step S26 removes the first photoresist layer outside the first photoresist layer column and the body, and the position that the first photoresist layer column is corresponding forms through hole, and described through hole and body consist of columnar electrode;
Step S27 removes the described Seed Layer of part take described columnar electrode as mask; The top surface of the body of described columnar electrode and inside side walls surface also are formed with metal barrier, and the thickness of metal barrier is less than the radius of through hole;
Step S28 places described the first surface of insulating layer with Printing screen or corrosion resistant plate, and described Printing screen or corrosion resistant plate have the 3rd opening that exposes described columnar electrode body and through hole;
Step S29 fills the full weld tin cream in described the 3rd opening and through hole; Remove described Printing screen or corrosion resistant plate; Described solder(ing) paste is carried out reflux technique, form the metal plush copper at the columnar electrode top and form filling part in through hole, described metal plush copper and filling part consist of soldered ball.
Be described in detail below in conjunction with 3 ~ 15 pairs of above-mentioned concrete processes of accompanying drawing.
With reference to figure 3, semiconductor base 200 is provided, have some chip (not shown)s on the described semiconductor base 200, also have the some pads 201 that link to each other with chip on the semiconductor base 200, described pad 201 is made of aluminium, copper, gold or the material such as silver-colored, a pad only is shown as example in the present embodiment.
Then form one deck passivation layer 202 at semiconductor base 200; described passivation layer 202 has the opening of exposed pad surface or part surface; described passivation layer 202 is for the protection of the chip that forms on the semiconductor base 200, and the material of described passivation layer 202 is silicon nitride, Pyrex, phosphorosilicate glass or boron-phosphorosilicate glass or polyimides (polyimide) etc.
Then form the first insulating barrier 203 on described passivation layer 202 surfaces, described the first insulating barrier 203 has the first opening 204 that exposes described bond pad surface or part surface, and the opening that forms in the aforementioned passivation layer 202 is as the part of the first opening 204.Described the first insulating barrier 203 is as electrical isolation layer and sealing material layer, and the material of described the first insulating barrier 203 is the organic resins such as polybenzoxazoles (polybenzoxazole, PBO) or polyimides (polyimide).In the present embodiment, being formed on of described the first insulating barrier 203 forms before the columnar electrode, prevents after columnar electrode forms, when forming the first insulating barrier again, first insulating material of filling in the through hole of columnar electrode is not easy to be removed, and when removing to the damage of the body of columnar electrode.
In other embodiments of the invention, being formed on of described the first insulating barrier forms afterwards formation of columnar electrode, and detailed process is: form columnar electrode in bond pad surface; Then form the first insulating barrier at passivation layer, the surface of the first insulating barrier is concordant with the top surface of columnar electrode; Then remove the first insulating barrier in the columnar electrode through hole or remove simultaneously columnar electrode part the first insulating barrier all around; Form soldered ball at columnar electrode at last.
With reference to figure 4, form Seed Layer 205 on the surface of described the first insulating barrier 203 and bottom and the sidewall of the first opening 204.
Power supply layer when described Seed Layer 205 forms the columnar electrode body as follow-up plating.Described Seed Layer 205 is the stacked structure of the multilayer of chromium metal level or titanium coating or tantalum metal layer single layer structure or chromium metal level or titanium coating or tantalum metal layer and copper metal layer or gold metal layer or silver metal layer, described Seed Layer 205 forms by sputtering technology, described Seed Layer 205 can also be as diffusion impervious layer, prevent metal in the columnar electrode of follow-up formation in the first insulating barrier 203 diffusion and strengthen the adhesive force of column electrode metal and the first insulating barrier 203.
Need to prove that follow-up the first opening of mentioning all refers to form Seed Layer 205 rear remaining openings.
With reference to figure 5 and Fig. 6, Fig. 6 is the plan structure schematic diagram of Fig. 5, forms the first photoresist layer 206 on the surface of described Seed Layer 205, and described the first photoresist layer 206 is filled full the first opening 204(with reference to figure 4); The first photoresist layer in graphical the first opening 204, form the groove 207 that exposes the Seed Layer surface, remaining part the first photoresist is as the first photoresist layer column 211 in the groove 207, the quantity of the first photoresist layer column 211 is more than or equal to one, the diameter of described groove 207 equals the diameter c of the first opening 204, the lower partial sidewall of groove 207 overlaps with the sidewall of the first opening 204, and the section shape of the outside sidewall of groove 207 is identical with the section shape of the sidewall of the first opening 204.It is to be noted that the diameter of embodiment of the invention further groove (or body) refers to the outside sidewall of groove (or body) end to the longest distance of other end outside sidewall, the width of groove (or body) refers to that groove (or body) outside sidewall is to the vertical range of inside side walls.
The formation technique of described groove 207 is exposure and developing process.Groove 207 follow-up bodies for filling metal formation columnar electrode, the 211 follow-up removals of the first photoresist layer column form the through hole of columnar electrode afterwards.Need to prove in the embodiment of the invention, to have at least one first photoresist layer column in the groove, refer to that the first photoresist layer column can not contact with the outside sidewall of groove.
In the present embodiment, described the first photoresist layer column 211 is one, the first photoresist layer column 211 is positioned at the centre position of groove 207, the cross-section structure of the sidewall of the first photoresist layer column 211 is circle, the sidewall profile of described the first opening 204 is shaped as circle, the inside side walls of groove 207 is circle, the section shape of whole groove 207 is annulus, the ratio of the radius of described the first photoresist layer column 211 and groove 207 width a is 1/10 ~ 10/1, the ratio of the radius of the first better photoresist layer column 211 and groove 207 width is 1:3 ~ 3:1, during follow-up formation columnar electrode, so that the ratio of the width of the radius of the through hole of columnar electrode and body be 1/10 ~ 10/1, so that the body of columnar electrode has certain width, guarantee the mechanical strength of body, and make lower surface and the pad of the body of columnar electrode that certain contact area be arranged, make and keep certain adhesion between the body of columnar electrode and the pad, prevent from forming the slit between the body of columnar electrode and the pad, and increase contact resistance or cause and open circuit.
In another embodiment of the present invention, when the first photoresist layer column quantity is 1, the sidewall profile of described the first opening can be square or other polygon, the section shape of groove outside sidewall is identical with the sidewall profile shape of the first opening, and the section shape of the sidewall of the first photoresist layer column can be circle, square or other polygon.
In another embodiment of the present invention, when the first photoresist layer column quantity is 1, described groove comprises some independently sub-grooves that equal angles distributes that are as the center of circle take the first photoresist layer column center, be filled with the first photoresist layer between the adjacent sub-groove, when follow-up formation columnar electrode and soldered ball, so that the contact area of soldered ball and columnar electrode is larger, be conducive to improve the adhesion between soldered ball and the columnar electrode.Concrete, the sectional view of described sub-groove is a section of annulus.
In another embodiment of the present invention, the first photoresist layer column quantity is during greater than 1, the first photoresist layer column independent distribution in groove, please refer to Fig. 7, with four the first photoresist layer columns 211 as example, the first photoresist layer column 211 independent distribution in groove 207, four photoresist columns 211 are matrix and arrange, follow-up when removing the first photoresist layer column 211, in the body of columnar electrode, form four through holes that matrix is arranged, then in through hole, form the filling part of soldered ball.
In another embodiment of the present invention, the first photoresist layer column quantity is during greater than 1, arranging of described the first photoresist layer column can also be that straight line distributes, many parallel lineal layouts, the lineal layout that intersects, concentric circles distributes, donut distributes, polygon distributes, five-pointed star distributes, by the outside some radiation profile in groove center, perhaps irregular distribution, when follow-up removal the first photoresist layer column, the position of the through hole that forms in the body of columnar electrode is corresponding with the position of the first photoresist layer column, and arranging of some through holes can be that straight line distributes, many parallel lineal layouts, the lineal layout that intersects, concentric circles distributes, donut distributes, polygon distributes, five-pointed star distributes, by the outside some radiation profile in groove center, perhaps irregular distribution.Need to prove, the arrangement modes such as the lineal layout that embodiment of the invention cathetus distributes, intersects, concentric circles distribution refer to the figure that the line of centres of overlooking figure of the first photoresist layer column on semiconductor base consists of, follow-up through hole and filling part also similar.
With reference to figure 8, at described groove 207(with reference to figure 5) in fill metal, form the body 208 of columnar electrode, the top surface of the body 208 of described columnar electrode and the surperficial concordant of the first insulating barrier 203 or a little more than the surface of the first insulating barrier.
The metal of described filling is copper, and the technique of filling metal is electroplating technology, and the height of the body 208 of columnar electrode can be controlled by the time that control is electroplated.
With reference to figure 9 and Figure 10, Figure 10 is the plan structure schematic diagram (Seed Layer is not shown among Figure 10) of Fig. 9, remove described the first photoresist layer column 211(with reference to figure 8) and the body 208 of columnar electrode outside photoresist layer 206(with reference to figure 8), position in the first photoresist layer column 211 correspondences forms through hole 209, and described through hole 209 and body 208 consist of columnar electrode 210.Follow-up filling scolding tin forms the filling part of soldered ball in the described through hole 209.
Then; take described columnar electrode 210 as mask; remove the Seed Layer on the first insulating barrier 203; before removing; can form photoresist mask layer on columnar electrode 210 surfaces, in the process of removing the Some Species sublayer, the Seed Layer of protection body 208 and via bottoms can not sustain damage; after the Seed Layer of removing on the first insulating barrier 203, remove described photoresist mask layer.
In the present embodiment, remove first a photoresist column 211 after, in the centre of the body of columnar electrode, form a through hole 209, follow-uply in 209 through holes, fill scolding tin, form the filling part of soldered ball.The ratio of the width b of the radius of described through hole 209 and body 208 be 1/10 ~ 10/1, ratio 1:3 ~ the 3:1 of the radius of better through hole 209 and the width of body 208, so that the body 208 of columnar electrode has certain width, guarantee the mechanical strength of body 208, and make body 208 lower surface and the pad of columnar electrode that certain contact area be arranged, make and keep certain adhesion between the body 208 of columnar electrode and the pad, prevent from forming the slit between the body 208 of columnar electrode and the pad, and increase contact resistance or cause and open circuit.
In other embodiments of the invention, when the first photoresist layer column quantity during greater than 1, remove the corresponding through hole that forms of the first photoresist layer column greater than 1, through hole arrange for straight line distributes, many parallel lineal layouts, the lineal layout of intersection, concentric circless distribute, donut distributes, polygon distributes, five-pointed star distributes, by the center of body outside some radiation profile or irregular distribution.With reference to Figure 11, Figure 11 for remove four be the first photoresist layer column that matrix arranges after, form in the body 209 of columnar electrode four are the matrix through hole 209 of arranging.
With reference to Figure 12, form metal barrier 212 at the sidewall of through hole 209 and the top surface of bottom and body 208.
In the embodiment of the invention, between the body of soldered ball and columnar electrode, form layer of metal barrier layer 212, be used for preventing that the body 208 of columnar electrode from directly contacting with soldered ball, prevent that the contact-making surface of soldered ball and columnar electrode from forming the copper Sn intermetallic compound of fragility, improves the reliability of solder joint.And soldered ball of the prior art is when directly contacting with columnar electrode, in the environment of high temperature, copper in the columnar electrode can spread in the tin of soldered ball rapidly, form the copper Sn intermetallic compound at columnar electrode and soldered ball contact interface, because copper Sn intermetallic compound fragility is larger, can reduce the mechanical strength of contact interface, cause solder joint at intermetallic compound and the borderline damage of scolder or cracking, the reliability of impact welding.
Described metal barrier 212 is the double-decker of nickel tin, the double-decker of nickeline, the double-decker of the double-decker of nickel gold or nickel and ashbury metal, the tin layer, silver layer, gold layer or ashbury metal layer are formed on the surface of nickel dam, be used for preventing the oxidation of nickel, in the present embodiment, described metal barrier 212 be the double-decker of nickel tin, nickel is conducive to the diffusion that prevents that copper is outside, even have part copper and tin in metal barrier 212, to spread, ambrose alloy compound at the interface formation of metal barrier 212 and columnar electrode has higher intensity and good pyroelectricity, higher intensity at the nickel tin compound of the interface formation of metal barrier 212 and soldered ball, hardness is high, therefore surface uniform can not bring the mechanical strength of existing contact interface to reduce and the problem such as welding damage.
The thickness of metal barrier 212 prevents that less than the radius of through hole 209 metal barrier from stopping up through hole 209.
The formation technique of described metal barrier 212 is chemical plating process, and chemical plating process can optionally form metal barrier 212 at metallic surface.
When carrying out chemical plating process, can adopt ultrasonic oscillation, prevent in the process of chemical plating, when chemical plating solution enters through hole 209, in through hole, form bubble, affect the formation of metal barrier 212.Described hyperacoustic frequency is greater than 20KHz.
When carrying out chemical plating process, can apply the pressure greater than 1 standard atmospheric pressure in the described chemical plating chamber, so that chemical plating solution has a pressure, chemical plating solution more easily enters in the through hole 209, can not form bubble in through hole.
With reference to Figure 13, Printing screen or corrosion resistant plate 216 are placed described the first insulating barrier 203 surfaces, described Printing screen or corrosion resistant plate 216 have the body 208 that exposes described columnar electrode and through hole 209(with reference to Figure 12) the 3rd opening; At the 3rd opening and through hole 209 interior filling full weld tin creams 217.
The formation technique of described solder(ing) paste 217 is screen printing technique.
The material of described solder(ing) paste 217 is tin or ashbury metal.
With reference to Figure 14, remove described Printing screen or corrosion resistant plate.
With reference to Figure 15, to described solder(ing) paste 217(with reference to Figure 14) carry out reflux technique, form metal plush copper 214 at the columnar electrode top and in through hole, form filling part 213, described metal plush copper 214 and filling part 213 consist of soldered balls 215.Described reflux technique comprises Technology for Heating Processing.
In the present embodiment, when number of openings is 1, the quantity of the filling part 213 of corresponding soldered ball 215 is 1, soldered ball and columnar electrode consist of latch structure, soldered ball becomes multilevel contact with contacting from the contact of existing monoplane of columnar electrode, soldered ball is in the time spent of doing that is subject to external force, the Surface Contact face of soldered ball and columnar electrode can disperse the part active force, the contact-making surface of the body of the filling part of soldered ball and columnar electrode can disperse most active force simultaneously, thereby improve the conjugation between soldered ball and the columnar electrode, the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly.
In other embodiments of the invention, when the quantity of through hole during greater than 1, the quantity of the filling part of the soldered ball of corresponding formation is also greater than 1, soldered ball embeds in the body of columnar electrode by a plurality of filling parts, increased the contact area of soldered ball and columnar electrode, the bolt rod of the latch structure that soldered ball and columnar electrode consist of is a plurality of, improved the adhesion between soldered ball and the columnar electrode, and form filling part in the through hole and be many parallel lineal layouts, the lineal layout that intersects, concentric circles distributes, donut distributes, polygon distributes, five-pointed star distributes, by arranging of the outside rules such as some radiation profile in the center of body, so that the adhesion of all directions of soldered ball and columnar electrode is more even, the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) further strengthens, and soldered ball is difficult for coming off from columnar electrode.
In other embodiments of the invention, the formation technique of described soldered ball 215 is for planting ball and reflux technique.
The semiconductor device that said method forms please refer to Figure 15, and comprising: semiconductor base 200 has some pads 201 on the described semiconductor base 200; Be positioned at passivation layer 202 on the semiconductor base 200 and the stacked structure of the first insulating barrier 203, described stacked structure has the first opening that exposes described pad 201 surfaces; Be positioned at the columnar electrode of the first opening, described columnar electrode comprises body 208 and runs through the through hole of described body that the surface of the top surface of columnar electrode and the first insulating barrier 203 flushes with or slightly higher than the surface of the first insulating barrier 203; Be positioned at the sidewall of through hole and the metal barrier 212 of bottom and body 208 top surfaces; Seed Layer 205 between the first opening and columnar electrode body; Be positioned at the soldered ball 215 on the columnar electrode, described soldered ball 215 comprises the metal plush copper 214 that is positioned at columnar electrode 215 tops and the filling part 213 of filling full described through hole.
The quantity of described through hole (perhaps filling part) is more than or equal to 1, when described through hole is 1, corresponding filling part 213 also is 1, soldered ball and columnar electrode consist of latch structure, improve the conjugation between soldered ball and the columnar electrode, the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly.The ratio of the width of the radius of described through hole and body 208 be 1/10 ~ 10/1, ratio 1:3 ~ the 3:1 of the width of the radius of better through hole and body 208, so that the body 208 of columnar electrode has certain width, guarantee the mechanical strength of body 208, and make body 208 lower surface and the pad 201 of columnar electrode that certain contact area be arranged, make and keep certain adhesion between the body 208 of columnar electrode and the pad 201, prevent from forming the slit between the body 208 of columnar electrode and the pad 201, and increase contact resistance or cause and open circuit, thereby and the soldered ball plane of disruption be subject to that the columnar electrode body disturbs and repeatedly turnover increase the absorbability of its failure energy.
When the quantity of described through hole during greater than 1, the quantity of corresponding filling part 213 is also greater than 1, arranging of described filling part 213 is the straight line distribution, many parallel lineal layouts, the lineal layout that intersects, matrix distribution, concentric circles distributes, donut distributes, polygon distributes, five-pointed star distributes, by the outside some radiation profile in the center of body, perhaps irregular distribution, soldered ball embeds in the body of columnar electrode by a plurality of filling parts, increased the contact area of soldered ball and columnar electrode, the bolt rod of the latch structure that soldered ball and columnar electrode consist of is a plurality of, improved the adhesion between soldered ball and the columnar electrode, and form filling part in through hole and the through hole and be arranging of rule, so that the adhesion of all directions of soldered ball and columnar electrode is more even, the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) further strengthens, and soldered ball is difficult for coming off from columnar electrode.
The second embodiment
With reference to Figure 16, Figure 16 is the schematic flow sheet of the formation method of second embodiment of the invention semiconductor device, comprises step:
Step S31 provides semiconductor base, has some pads on the described semiconductor base;
Step S32 forms the first insulating barrier at described semiconductor base, and described the first insulating barrier has the first opening that exposes described pad, forms Seed Layer at the sidewall of described the first opening and the surface of bottom and the first insulating barrier;
Step S33, form the first photoresist layer on the surface of described Seed Layer, the first photoresist layer is filled full described the first opening, has the groove that exposes the Seed Layer surface in the first photoresist layer in the first opening, have at least one first photoresist layer column in the groove, the diameter of described groove is less than the width of described the first opening;
Step S34 fills full metal in groove, form the body of columnar electrode, and the top surface of described body is higher than the surface of the first insulating barrier;
Step S35, remove the first photoresist layer outside the first photoresist layer column and the body, the position that the first photoresist layer column is corresponding forms through hole, described through hole and body consist of columnar electrode, be formed with annular etched recesses between the sidewall around outside sidewall and the first opening around the described columnar electrode simultaneously, annular etched recesses exposes the part pad of columnar electrode both sides;
Step S36 places the first surface of insulating layer with Printing screen or corrosion resistant plate, and described Printing screen or corrosion resistant plate have the body of the described columnar electrode of exposure and the 4th opening of through hole and annular etched recesses;
Step S37 fills the full weld tin cream in the 4th opening, through hole and annular etched recesses;
Step S37 removes described Printing screen or corrosion resistant plate; Described solder(ing) paste is carried out reflux technique, form the metal plush copper at the columnar electrode top and in through hole, form filling part described, form opotism section at the outside of described columnar electrode body sidewall simultaneously, the upper part of opotism section is connected with edge under the metal plush copper, the lower part of opotism section is connected with the part pad of columnar electrode both sides and the sidewall of the first opening contacts, the width of the lower part of described opotism section is greater than the width of upper part, the surface of the lower part of opotism section is lower than the surface of the first insulating barrier or surperficial concordant with the first insulating barrier, described metal plush copper, filling part and opotism section consist of soldered ball.
Be described in detail below in conjunction with 17 ~ 28 pairs of above-mentioned concrete processes of accompanying drawing.Need to prove that concrete forming process and the relevant parameter of part-structure please refer to the first embodiment of the present invention in the second embodiment of the present invention, do not do in the description part of the second embodiment and give unnecessary details.
With reference to Figure 17 and Figure 18, semiconductor base 300 is provided, have some pads 301 on the described semiconductor base 300; At the stacked structure of described semiconductor base formation passivation layer 302 and the first insulating barrier 303, described stacked structure has the opening 304 on exposed pad 301 surfaces; Sidewall and bottom and the first insulating barrier 303 surface formation Seed Layer 305 at opening 304.
The appropriate section that above-mentioned concrete forming process and associated description please refer to the first embodiment does not repeat them here.
With reference to Figure 19, form the first photoresist layer 306 on the surface of described Seed Layer 305, the first photoresist layer 306 is filled full described the first opening 304(with reference to Figure 18), has the groove 307 that exposes the Seed Layer surface in the first photoresist layer in the first opening 304, have at least one first photoresist layer column 306a in the groove 307, the diameter of described groove 307 is less than the width (outside sidewall of groove 307 is positioned at the first opening 304) of described the first opening 304.
In the present embodiment, the diameter of groove 307 is less than the width of described the first opening 304, so that the outside sidewall of groove 307 distance the first opening 304(comprises Seed Layer 303) have part the first photoresist layer between the sidewall, the follow-up body that in groove 307, forms columnar electrode, after removing the first photoresist layer 306, so that can form annular etched recesses between the sidewall of the outside sidewall of the body of columnar electrode and the first opening 304, when forming soldered ball, be conducive to the formation of soldered ball " L " type opotism section.
The quantity of the first photoresist layer column 306a is more than or equal to one in the described groove 307, and concrete the arranging of the first photoresist layer column 306a please refer to the associated description in the first embodiment of the present invention.
With reference to Figure 20, adopt electroplating technology to please refer to Figure 30 7 at described groove 307() fill full metal, form the body 308 of columnar electrode.
The surface that is higher than the first insulating barrier 303 of the top surface of the body 308 of columnar electrode.
With reference to Figure 21 and Figure 22, Figure 22 is the plan structure schematic diagram of Figure 21, remove the first photoresist layer column 306a(with reference to Figure 20) and body 308 outside the first photoresist layer 306, the position that the first photoresist layer column 306a is corresponding forms through hole 309, described through hole 309 and body 308 consist of columnar electrode 310, be formed with annular etched recesses 304a between the sidewall around outside sidewall and the first opening 304 around the described columnar electrode simultaneously, annular etched recesses 304a is the part of the first opening, and annular etched recesses 304a exposes part Seed Layer 305 on the pad of columnar electrode both sides; Remove outer the first insulating barrier 303 surfaces of the first opening and/or the Some Species sublayer of the first opening 304 sidewalls.
In other embodiments of the invention, the Seed Layer of described the first opening sidewalls obtains keeping or part is positioned at the first insulating barrier 303 surfaces, follow-up when on metal, optionally forming metal barrier, so that form metal barrier in the annular etched recesses be shaped as " U " shape, at " U " shape metal barrier Surface filling solder(ing) paste, when carrying out reflux technique, three faces of solder(ing) paste and " U " shape metal barrier contact, absorption affinity on solder(ing) paste and the metal barrier bed boundary (mainly being the metal barrier of the first opening sidewalls) can be offset the tension force on part solder(ing) paste surface, when refluxing, thereby so that the shape of the opotism section of the formation in the body outside is L-shaped.
With reference to Figure 23, form metal barrier 311 on body 308 surfaces, inside side walls and outside sidewall and the Seed Layer surface of columnar electrode, the concrete technology that metal barrier 311 forms please refer to the first embodiment of the present invention.
With reference to Figure 24 to Figure 26, Printing screen or corrosion resistant plate 318 are placed the first insulating barrier 303 surfaces, and described Printing screen or corrosion resistant plate 318 have the body 308 of the described columnar electrode 310 of exposure and the 4th opening 319 of through hole 309 and annular etched recesses 304a; Then, fill full weld tin cream 320 at the 4th opening 319, through hole 309 and annular etched recesses 304a; Then, remove described Printing screen or corrosion resistant plate 318, concrete forming process please refer to the first embodiment of the present invention.
With reference to Figure 27, to described solder(ing) paste 320(with reference to Figure 26) carry out reflux technique, form metal plush copper 312 at the columnar electrode top and in through hole, form filling part 313 described, form opotism section 315 at the outside of described columnar electrode body 308 sidewall simultaneously, 312 times edges of the upper part of opotism section 315 and metal plush copper are connected, the lower part of opotism section 312 is connected with the part pad of columnar electrode both sides (metal barrier 311 on the pad of columnar electrode both sides) and the sidewall of the first opening contacts, the width of the lower part of described opotism section 315 is greater than the width of upper part, the surface of the lower part of opotism section 315 is lower than the surface of the first insulating barrier 303 or with the surperficial concordant of the first insulating barrier 303 or be higher than the surface of the first insulating barrier 303, described metal plush copper 312, filling part 313 and opotism section 315 consist of soldered ball 316.
When carrying out reflux technique, the solder(ing) paste at columnar electrode top forms metal plush copper 312 under capillary effect, the columnar electrode top surface is higher than the surface of the first insulating barrier 303, the solder(ing) paste of body 308 outside sidewall mid portions only with plane contact of body sidewall, the part solder(ing) paste also can the direction to the metal plush copper converge under capillary effect, and the solder(ing) paste in the annular etched recesses of body 308 outside lower sidewall and the sidewall of the first opening, body 308 outside side wall upper part divide metal barrier layer 311 all to contact with 311 3 faces in part metals barrier layer on the pad 301, when refluxing, absorption affinity between the solder(ing) paste contact-making surface in the sidewall of the first opening and the annular etched recesses can be offset the part surface tension force of body 308 directions of the sensing columnar electrode of the solder(ing) paste in the annular etched recesses, absorption affinity between the contact-making surface of the solder(ing) paste in the part metals barrier layer 311 on the pad 301 and the annular etched recesses also can be offset the partial tension of solder(ing) paste sensing metal plush copper 312 directions in the annular etched recesses of part, thereby so that form the opotism section 315 of " L " type on body 308 outside sidewalls, the thickness of 315 times parts of opotism section of " L " type is relevant with the thickness of the first insulating barrier 303, and the thickness of 315 times parts of opotism section is equal to or less than the thickness of the first insulating barrier 303.
The opotism section 315 of " L " type contacts with 311 3 faces in part metals barrier layer on the sidewall of the first opening, body 308 sidewall sections metal barriers 311 and the pad 301, the width of 315 times parts of opotism section of " L " type is greater than the width of upper part, has the function that is similar to bracing frame, the opotism section of " L " type is so that the acceptable lateral external forces that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly, and soldered ball is difficult for coming off from columnar electrode.
With reference to Figure 28, form the second insulating barrier 317 on opotism section 315 surfaces of described the first insulating barrier 303 surfaces and soldered ball.
Described the second insulating barrier 317 is used for sealing and insulation, and steam and oxygen in preventing from controlling enter on pad 301 and the columnar electrode, cause corrosion.The organic resins such as the polybenzoxazoles (polybenzoxazole, PBO) that described the second insulating barrier 317 materials are or polyimides (polyimide).
The semiconductor device that said method forms please refer to 27, comprises
Semiconductor base 300 has some pads 301 on the described semiconductor base 300; Be positioned at passivation layer 302 on the semiconductor base 300 and the stacked structure of the first insulating barrier 303, described stacked structure has the first opening that exposes described pad 301 surfaces; Be positioned at the columnar electrode of the first opening, described columnar electrode comprises body 208 and the through hole that runs through described body 208, and the diameter of columnar electrode is less than the width of the first opening, and the top surface of columnar electrode is higher than the surface of the first insulating barrier 303; Be positioned at soldered ball 316 on the columnar electrode, described soldered ball 316 comprises: the metal plush copper 312 that is positioned at the columnar electrode top, the filling part 313 of filling vias and be positioned at opotism section 315 on the outside sidewall of columnar electrode body 308, the upper part of opotism section 315 is connected with metal plush copper 312, the lower part of opotism section 315 is connected with the part pad of columnar electrode both sides, and contact with the sidewall of the first opening, the width of the lower part of described opotism section 315 is greater than the width of upper part, and the surface of the lower part of opotism section 315 is lower than the surface of the first insulating barrier 303 or with the surperficial concordant of the first insulating barrier 303 or be higher than the surface of the first insulating barrier 303; Metal barrier 311 between soldered ball 316 and columnar electrode body; Seed Layer between columnar electrode and pad 301.
The 3rd embodiment
With reference to Figure 29, Figure 29 is the schematic flow sheet of third embodiment of the invention method for forming semiconductor devices, comprises step:
Step S41 provides semiconductor base, has some pads on the described semiconductor base;
Step S42 forms the first insulating barrier at described semiconductor base, and described the first insulating barrier has the first opening that exposes described pad;
Step S43 forms Seed Layer at the sidewall of described the first opening and the surface of bottom and the first insulating barrier;
Step S44 forms again wiring layer in the Some Species sub-layer surface, and wiring layer is filled full the first opening again; Again wiring layer surface outside the first opening forms columnar electrode;
Step S45 forms the 3rd photoresist layer at described again wiring layer and Some Species sub-layer surface, and described the 3rd photoresist layer has the groove that exposes the outer again wiring layer surface of the first opening, has at least one the 3rd photoresist layer column in the groove;
Step S46 fills full metal in described groove, form the body of columnar electrode; Remove the 3rd photoresist layer outside the 3rd photoresist layer column and the body, the position that the 3rd photoresist layer column is corresponding forms through hole, and described through hole and body consist of columnar electrode; Take described columnar electrode as mask, remove the described Seed Layer of part;
Step S47 forms the second insulating barrier at described again wiring layer and part the first surface of insulating layer, and the surface of described the second insulating barrier is lower than the top surface of columnar electrode;
Step S48 forms the 4th photoresist layer at described the second surface of insulating layer, and described the 4th photoresist layer has the 6th opening of part the second insulating barrier that exposes columnar electrode and the columnar electrode outside; Take the body of described the 4th photoresist layer and columnar electrode as mask, remove part the second insulating barrier in the through hole, remove simultaneously part second insulating barrier in the columnar electrode outside, form the annular etched recesses that exposes again the wiring layer surface in the columnar electrode outside;
Step S49 removes described the 4th photoresist layer; Printing screen or corrosion resistant plate are placed described the second surface of insulating layer, and described Printing screen or corrosion resistant plate have the minion mouth of the body, through hole and the annular etched recesses that expose columnar electrode; Fill the full weld tin cream in minion mouth, through hole and annular etched recesses; Remove described Printing screen or corrosion resistant plate;
Step S50, described solder(ing) paste is carried out reflux technique, form the metal plush copper at the columnar electrode top and in through hole, form filling part described, form opotism section at the outside of described columnar electrode body sidewall simultaneously, the upper part of opotism section is connected with edge under the metal plush copper, the lower part of opotism section and the part of columnar electrode both sides again wiring layer are connected and the sidewall of annular etched recesses contacts, the width of the lower part of described opotism section is greater than the width of upper part, the surface of the lower part of opotism section is lower than the surface of the second insulating barrier or surperficial concordant with the second insulating barrier, described metal plush copper, filling part and opotism section consist of soldered ball.
Below in conjunction with accompanying drawing 30 ~ Figure 40 above-mentioned detailed process is described in detail.Need to prove that the concrete forming process of part-structure and relevant parameter please refer to the first embodiment of the present invention and the second embodiment in the third embodiment of the present invention, do not do in the description part of the 3rd embodiment and give unnecessary details.
With reference to Figure 30, semiconductor base 400 is provided, have pad 401 on the described semiconductor base 400; At the stacked structure of described semiconductor base formation passivation layer 402 and the first insulating barrier 403, described stacked structure has the opening on exposed pad 401 surfaces; Form Seed Layer 405 at the sidewall of described opening and the surface of bottom and the first insulating barrier; In opening, form again wiring layer 406 with Seed Layer 405 surfaces.
The formation technique of described again wiring layer 406 is electroplating technology.Follow-uply form columnar electrodes on 406 surfaces of wiring layer again, with respect to directly forming columnar electrode in bond pad surface, be conducive to improve the density of encapsulating structure.
With reference to Figure 31, form the 3rd photoresist layer 407 at described again wiring layer 406 and 405 surfaces, Some Species sublayer, described the 3rd photoresist layer 407 has the groove 412 that exposes outer again wiring layer 406 surfaces of the first opening, has at least one the 3rd photoresist layer column 407a in the groove 412.
The 3rd arranging of photoresist layer column 407a specifically please refer to the first embodiment of the present invention in the groove 412, do not repeat them here.
With reference to Figure 32 and Figure 33, adopt electroplating technology in groove, to fill full metal, form the body 408 of columnar electrode; The position corresponding to the 3rd photoresist layer 407, the three photoresist layer column 407a of removing outside the 3rd photoresist layer column 407a and the body 408 forms through hole 409, and described through hole 409 and body 408 consist of columnar electrode 410.
With reference to Figure 34, take described columnar electrode 410 and again wiring layer 406 remove the described Seed Layer 405 of part as mask.
The formation of columnar electrode 410 after the formation Seed Layer, forms wiring layer and columnar electrode prior to the formation of the second insulating barrier more again in this enforcement, and Seed Layer is as the supply lines that forms again wiring layer and columnar electrode, and then removal Some Species sublayer.
With reference to Figure 35, form the second insulating barrier 411 at described again wiring layer 406 and part the first insulating barrier 403 surfaces, the surface of described the second insulating barrier 411 is lower than the top surface of columnar electrode 410.
When the surface of described the second insulating barrier 411 is lower than the top surface of columnar electrode 410, part second insulating barrier in the follow-up removal columnar electrode body outside forms annular etched recesses, then form the opotism section of " L " type at the outside of body sidewall, form the soldered ball with metal plush copper, filling part and opotism section.
In other embodiments of the invention, the surface of described the second insulating barrier is concordant with the top surface of columnar electrode or a little less than the surface of columnar electrode, follow-up formation has the soldered ball of filling part and opotism section.
With reference to Figure 36, form the 4th photoresist layer 420 on described the second insulating barrier 411 surfaces, described the 4th photoresist layer 420 has the 6th opening 421 of part the second insulating barrier 411 that exposes columnar electrode 410 and columnar electrode 410 outsides; Take the body of described the 4th photoresist layer 420 and columnar electrode 410 as mask, remove part the second insulating barrier in the through hole 409, remove simultaneously part second insulating barrier in columnar electrode 410 outsides, form the annular etched recesses 423 that exposes again wiring layer 406 surfaces in columnar electrode 410 outsides.
In other embodiments of the invention, when the surface that forms the second insulating barrier is concordant with the top surface of columnar electrode, form the second insulating barrier at described again wiring layer and part the first surface of insulating layer, the surface of described the second insulating barrier is concordant with the top surface of columnar electrode; Form the 4th photoresist layer at described the second surface of insulating layer, described the 4th photoresist layer has the 5th opening that exposes columnar electrode; Take the body of described the 4th photoresist layer and columnar electrode as mask, remove part the second insulating barrier in the through hole; Remove described the 4th photoresist layer; Printing screen or corrosion resistant plate are placed described the first surface of insulating layer, and described Printing screen or corrosion resistant plate have the body of exposure columnar electrode and the octavo mouth of through hole; In octavo mouth and through hole, fill the full weld tin cream; Remove described Printing screen or corrosion resistant plate; Described solder(ing) paste is carried out reflux technique, form the metal plush copper at the columnar electrode top and form filling part in through hole, described metal plush copper and filling part consist of soldered ball.
With reference to Figure 37, form metal barriers 414 in wiring layer 406 surfaces again in top surface, outside sidewall and inside side walls surface and the part of the body 408 of columnar electrode; Remove described the 4th photoresist layer (with reference to Figure 36); Printing screen or corrosion resistant plate 425 are placed described the second insulating barrier 411 surfaces, and described Printing screen or corrosion resistant plate 411 have the minion mouth 426 of the body 408, through hole 409 and the annular etched recesses 423 that expose columnar electrode.
With reference to Figure 38 and Figure 39, at minion mouth 426, through hole 408 and annular etched recesses 423(with reference to Figure 37) in fill full weld tin cream 424; Remove described Printing screen or corrosion resistant plate 425.
With reference to Figure 40, described solder(ing) paste is carried out reflux technique, form metal plush copper 415 at the columnar electrode top and in through hole, form filling part 416 described, form " L " shape opotism section 417 at the outside of described columnar electrode body 408 sidewall simultaneously, 415 times edges of the upper part of " L " shape opotism section 417 and metal plush copper are connected, the lower part of " L " shape opotism section 417 and the part of columnar electrode both sides again wiring layer 406 are connected and the sidewall of annular etched recesses contacts, the width of the lower part of described opotism section 417 is greater than the width of upper part, the surface of the lower part of opotism section 417 is lower than the surface of the second insulating barrier 411 or with the surperficial concordant of the second insulating barrier 411 or be higher than the surface of the second insulating barrier 411, described metal plush copper 415, filling part 416 and opotism section 417 consist of soldered ball 418.
The semiconductor device that said method forms please refer to Figure 40, and comprising: semiconductor base 400 has pad 401 on the described semiconductor base 400; Be positioned at passivation layer 402 on the semiconductor base 400 and the stacked structure of the first insulating barrier 403, described stacked structure has the first opening that exposes described pad 401 surfaces; Be positioned at the Seed Layer 405 of sidewall and bottom and the first insulating barrier part surface of opening; Be positioned at the again wiring layer 406 on Seed Layer 405 surfaces, wiring layer 406 is filled the full gate mouth again; Be positioned at second insulating barrier 411 on wiring layer 406 and part the first insulating barrier 403 surfaces, described the second insulating barrier 411 has again second opening on wiring layer 406 surfaces of the outer part of first opening of exposure again; Be positioned at the columnar electrode on again wiring layer 406 surfaces of the second opening, described columnar electrode comprises institute's body 408 and runs through the through hole of described body 408, the diameter of columnar electrode is less than the width of the second opening, have annular etched recesses between the sidewall of columnar electrode and the second opening, the top surface of columnar electrode is higher than the surface of the second insulating barrier 411; Be positioned at soldered ball 418 on the columnar electrode, described soldered ball 418 comprises: the metal plush copper 415 that is positioned at the columnar electrode top, the filling part 416 of filling vias and be positioned at opotism section 417 on the outside sidewall of columnar electrode body 408, the upper part of opotism section 417 is connected with metal plush copper 415, the lower part of opotism section 417 and the part of columnar electrode both sides again wiring layer 406 are connected, and contact with the sidewall of the second opening, the width of the lower part of described opotism section 417 is greater than the width of upper part, and the surface of the lower part of opotism section 417 is lower than the surface of the second insulating barrier 411 or with the surperficial concordant of the second insulating barrier 411 or be higher than the surface of the second insulating barrier 411; Metal barrier 414 between soldered ball 418 and columnar electrode body 408.
To sum up, the semiconductor device of the embodiment of the invention, columnar electrode in the described semiconductor device comprises body and is arranged in described body and runs through the through hole of described body, soldered ball on the columnar electrode comprises the metal plush copper that is positioned at columnar electrode bodies top surface and the filling part of filling described through hole, soldered ball and columnar electrode consist of a kind of structure of similar latch, therefore soldered ball not only contacts with the top surface of columnar electrode, and contact with the inside of columnar electrode, soldered ball becomes multilevel contact with contacting from the contact of existing monoplane of columnar electrode, soldered ball is in the time spent of doing that is subject to external force, the Surface Contact face of soldered ball and columnar electrode can disperse the part active force, the contact-making surface of the body of the filling part of soldered ball and columnar electrode can disperse most active force simultaneously, thereby improve the conjugation between soldered ball and the columnar electrode, the external force accepted that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly.
Further, described soldered ball also comprises opotism section, three faces in part metals barrier layer on sidewall, base side wall part metal barrier and the pad of opotism section and the first opening contact, the width of opotism subordinate part is greater than the width of upper part, so that opotism section is " L " type, opotism section has the function that is similar to bracing frame at the outside of the body of columnar electrode sidewall, the opotism section of " L " type is so that the acceptable lateral external forces that soldered ball is subject to (power that soldered ball and columnar electrode are broken away from) strengthens greatly, and soldered ball is difficult for coming off from columnar electrode.
Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (18)
1. a semiconductor device is characterized in that, comprising:
Semiconductor base, described semiconductor base has some pads;
Be positioned at the first insulating barrier on the semiconductor base, described the first insulating barrier has the first opening that exposes described bond pad surface;
Be positioned at the columnar electrode on the described pad, described columnar electrode comprises body and runs through the through hole of described body, described through hole exposed pad surface;
Be positioned at the soldered ball on the described columnar electrode, described soldered ball comprises the metal plush copper that is positioned at the columnar electrode top and the filling part of filling full described through hole.
2. semiconductor device as claimed in claim 1 is characterized in that, the quantity that is arranged in the through hole of described body is 1, the ratio of the radius of the through hole of described columnar electrode and the width of body be 1/10 ~ 10/1.
3. semiconductor device as claimed in claim 2 is characterized in that, the cross sectional shape of described body is the polygon of annulus or hollow.
4. semiconductor device as claimed in claim 2 is characterized in that, has some seams at quarter that equal angles distributes that are on the body of described columnar electrode, stitches described quarter body is divided into some independently sub-bodies that equal angles distributes that are.
5. semiconductor device as claimed in claim 4 is characterized in that, the sectional view of described sub-body is a section of annulus.
6. semiconductor device as claimed in claim 4 is characterized in that, described filling part is also filled the seam at quarter between the completely sub-body.
7. semiconductor device as claimed in claim 1 is characterized in that, is arranged in the quantity of through hole of described body greater than 1, described through hole independent distribution in body.
8. semiconductor device as claimed in claim 7 is characterized in that, the linearly distribution in body of described through hole, matrix distribution, concentric circles distribute, donut distributes, polygon distributes or irregular distribution.
9. semiconductor device as claimed in claim 1 is characterized in that, the surface of the first insulating barrier is concordant with the top surface of columnar electrode, and the width of described the first opening equals the diameter of columnar electrode, and the sidewall of the first opening contacts with the outer surface of columnar electrode.
10. semiconductor device as claimed in claim 1 is characterized in that, the surface of the first insulating barrier is lower than the top surface of columnar electrode, and the width of described the first opening is greater than the diameter of columnar electrode.
11. semiconductor device as claimed in claim 10, it is characterized in that, described soldered ball also has the opotism section on the outside sidewall that is positioned at the columnar electrode body, the upper part of opotism section is connected with the metal plush copper, the lower part of opotism section is connected with the part pad of columnar electrode both sides, and contact with the sidewall of the first opening, the width of the lower part of described opotism section is greater than the width of upper part, and the surface of the lower part of opotism section is lower than the surface of the first insulating barrier or with the surperficial concordant of the first insulating barrier or be higher than the surface of the first insulating barrier.
12. semiconductor device as claimed in claim 11, it is characterized in that, between the metal plush copper of described soldered ball and the bodies top surface of columnar electrode, also have metal barrier between the inside side walls of filling part and body and between the outside sidewall of opotism section and body.
13. semiconductor device as claimed in claim 12 is characterized in that, described metal barrier be the double-decker of nickel tin, the double-decker of nickeline, the double-decker of nickel gold or the double-decker of nickel and ashbury metal.
14. semiconductor device as claimed in claim 1, it is characterized in that, also comprise: be positioned at the bottom of described the first opening and the again wiring layer of sidewall and part the first surface of insulating layer, described in the part of wiring layer as pad, described columnar electrode is positioned at the outer again wiring layer surface of the first opening.
15. semiconductor device as claimed in claim 14, it is characterized in that, also comprise: be positioned at the second insulating barrier of described again wiring layer and the first surface of insulating layer, described the second insulating barrier has second opening on the described again wiring layer of expose portion surface, and columnar electrode is arranged in the second opening.
16. semiconductor device as claimed in claim 15, it is characterized in that, the surface of described the second insulating barrier is concordant with the top surface of columnar electrode, and the width of described the second opening equals the diameter of columnar electrode, and the sidewall of the second opening contacts with the outer surface of columnar electrode.
17. semiconductor device as claimed in claim 15 is characterized in that, the surface of described the second insulating barrier is lower than the lower surface of columnar electrode, and the width of described the second opening is greater than the diameter of columnar electrode.
18. semiconductor device as claimed in claim 17, it is characterized in that, described soldered ball also has the opotism section on the outside sidewall that is positioned at the columnar electrode body, the upper part of opotism section is connected with the metal plush copper, the lower part of opotism section and the part of columnar electrode both sides again wiring layer are connected, and contact with the sidewall of the second opening, the width of the lower part of described opotism section is greater than the width of upper part, and the surface of the lower part of opotism section is lower than the surface of the second insulating barrier or with the surperficial concordant of the second insulating barrier or be higher than the surface of the second insulating barrier.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210444357.XA CN102969344B (en) | 2012-11-08 | 2012-11-08 | Semiconductor device |
| US14/074,697 US9761549B2 (en) | 2012-11-08 | 2013-11-07 | Semiconductor device and fabrication method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210444357.XA CN102969344B (en) | 2012-11-08 | 2012-11-08 | Semiconductor device |
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| CN102969344B (en) | 2016-09-28 |
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Address after: Jiangsu province Nantong City Chongchuan road 226006 No. 288 Patentee after: Tongfu Microelectronics Co., Ltd. Address before: 226006 Jiangsu Province, Nantong City Chongchuan District Chongchuan Road No. 288 Patentee before: Fujitsu Microelectronics Co., Ltd., Nantong |