CN102969344B

CN102969344B - Semiconductor device

Info

Publication number: CN102969344B
Application number: CN201210444357.XA
Authority: CN
Inventors: 林仲珉; 石磊; 高国华
Original assignee: Nantong Fujitsu Microelectronics Co Ltd
Current assignee: Tongfu Microelectronics Co Ltd
Priority date: 2012-11-08
Filing date: 2012-11-08
Publication date: 2016-09-28
Anticipated expiration: 2032-11-08
Also published as: CN102969344A

Abstract

A kind of semiconductor device, including: semiconductor base, described semiconductor base has some pads；The first insulating barrier being positioned on semiconductor base, described first insulating barrier has the first opening exposing described bond pad surface；Being positioned at the columnar electrode on described pad, described columnar electrode includes body and runs through the through hole of described body, and described through hole exposes bond pad surface；Being positioned at the soldered ball on described columnar electrode, described soldered ball includes the metal plush copper being positioned at columnar electrode top and fills the filling part of full described through hole.Soldered ball constitutes the structure of similar latch with columnar electrode, improves the adhesion between soldered ball and columnar electrode.

Description

Semiconductor device

Technical field

The present invention relates to field of semiconductor package, improve soldered ball and columnar electrode adhesion particularly to one Semiconductor device.

Background technology

Wafer-level package (Chip Scale Package, CSP) as the chip encapsulation technology of latest generation, The advantages such as the product of CSP encapsulation has that volume is little, good electrical property and good in thermal property.Wafer level CSP (WCSP) as the one of wafer-level package, it is first to be packaged on disk, and with the form of disk Test, burn-in screen, disk is divided into single CSP circuit the most again.

The Chinese patent of Publication No. CN1630029A discloses partly leading of a kind of wafer level CSP structure Body device, refer to Fig. 1, including: semiconductor base 11, described semiconductor base 11 has pad 12；Being positioned at the passivation layer 14 on described semiconductor base 11 surface, described passivation layer 14 has exposure pad The opening on 12 surfaces；It is positioned at wiring layer 16 again of portion of the passivating layer 14 surface and opening, then connects up Layer 16 is connected with pad 12；The columnar electrode 17 on wiring layer again 16 surface being positioned at outside described opening； Wiring layer 16 and the insulating barrier 20 on portion of the passivating layer 14 surface again described in covering, the surface of insulating barrier 20 with The flush of columnar electrode 17；It is positioned at the soldered ball 21 on columnar electrode 17 surface.

Soldered ball in existing semiconductor device easily comes off from the surface of columnar electrode.

Summary of the invention

The problem that the present invention solves is to improve a kind of semiconductor device, improve soldered ball and columnar electrode it Between conjugation.

For solving the problems referred to above, technical solution of the present invention provides a kind of semiconductor device, including: a kind of Semiconductor device, it is characterised in that including: semiconductor base, described semiconductor base has some welderings Dish；The first insulating barrier being positioned on semiconductor base, described first insulating barrier has the described pad table of exposure First opening in face；Being positioned at the columnar electrode on described pad, described columnar electrode includes body and runs through The through hole of described body, described through hole exposes bond pad surface；It is positioned at the soldered ball on described columnar electrode, institute State soldered ball include being positioned at the metal plush copper at columnar electrode top and fill the filling part of full described through hole.

Optionally, the quantity of the through hole being positioned in described body is 1, the through hole of described columnar electrode The ratio of the width of radius and body be 1/10 ~ 10/1.

Optionally, the cross sectional shape of described body is the polygon of annulus or hollow.

Optionally, the body of described columnar electrode has some in be angularly distributed quarter seam, described quarter Body is divided into some in the independent sub-body being angularly distributed by seam.

Optionally, sectional view is annulus a section of described sub-body.

Optionally, described filling part also fills up the seam at quarter between the most sub-body.

Optionally, the quantity of the through hole being positioned in described body is more than 1, and described through hole is the most only Vertical distribution.

Optionally, described through hole is the most linearly distributed, matrix distribution, concentric circular are distributed, with one heart Annulus distribution, polygon are distributed or are randomly distributed.

Optionally, the surface of the first insulating barrier is concordant with the top surface of columnar electrode, described first opening Width equal to the diameter of columnar electrode, the sidewall of the first opening contacts with the outer surface of columnar electrode.

Optionally, the surface of the first insulating barrier is less than the top surface of columnar electrode, described first opening Width is more than the diameter of columnar electrode.

Optionally, described soldered ball also has the opotism portion on the outside side wall being positioned at columnar electrode body, skirt The upper part in band portion is connected with metal plush copper, the lower part in opotism portion and the part pad of columnar electrode both sides Being connected, and contact with the sidewall of the first opening, the width of the lower part in described opotism portion is more than top Point width, the surface of the lower part in opotism portion less than the first insulating barrier surface or with the first insulating barrier Flush or the surface higher than the first insulating barrier.

Optionally, between metal plush copper and the bodies top surface of columnar electrode of described soldered ball, filling part And also there is between the inside side walls of body and between opotism portion and the outside side wall of body metal barrier Layer.

Optionally, the double-decker for nickel stannum of described metal barrier, the double-decker of nickeline, nickel gold Double-decker or nickel and the double-decker of ashbury metal.

Optionally, the bottom of described first opening and sidewall and part the first surface of insulating layer it are positioned at Wiring layer again, described at wiring layer as the part of pad, described columnar electrode is positioned at outside the first opening Wiring layer surface again.

Optionally, be positioned at described in wiring layer and the second insulating barrier of the first surface of insulating layer again, described second Insulating barrier has second opening on wiring layer surface again described in expose portion, and columnar electrode is positioned at the second opening In.

Optionally, the surface of described second insulating barrier is concordant with the top surface of columnar electrode, and described second The width of opening is equal to the diameter of columnar electrode, and the sidewall of the second opening connects with the outer surface of columnar electrode Touch.

Optionally, the surface of described second insulating barrier is less than the lower surface of columnar electrode, and described second opens The width of mouth is more than the diameter of columnar electrode.

Optionally, described soldered ball also has the opotism portion on the outside side wall being positioned at columnar electrode body, skirt The upper part in band portion is connected with metal plush copper, the lower part in opotism portion and the part cloth again of columnar electrode both sides Line layer is connected, and contacts with the sidewall of the second opening, and the width of the lower part in described opotism portion is more than The width of upper part, less than the surface of the second insulating barrier or insulate with second in the surface of the lower part in opotism portion The flush of layer or higher than the surface of the second insulating barrier.

Compared with prior art, technical solution of the present invention has the advantage that

The semiconductor device of the embodiment of the present invention, the columnar electrode in described semiconductor device include body and Being positioned in described body and run through the through hole of described body, the soldered ball on columnar electrode includes being positioned at column electricity The metal plush copper on bodies top surface, pole and the filling part of the described through hole of filling, soldered ball is constituted with columnar electrode A kind of structure of similar latch, therefore soldered ball not only contacts with the top surface of columnar electrode, and and post The inside of shape electrode has contact, soldered ball to become putting down with the contact from existing monoplane that contacts of columnar electrode more The contact in face, soldered ball is when being acted on by external force, and soldered ball can disperse with the surface contact surface of columnar electrode Partial action power, the filling part of soldered ball can disperse most with the contact surface of the body of columnar electrode simultaneously Active force, thus improve the conjugation between soldered ball and columnar electrode, the acceptable external force that soldered ball is subject to (makes The power that soldered ball departs from columnar electrode) greatly strengthen.

Further, when the quantity of described through hole is 1, the ratio of the radius of described through hole and the width of body Value be 1/10 ~ 10/1 so that the body of columnar electrode has certain width, it is ensured that the machinery of body is strong Degree, and make the body bottom portion surface of columnar electrode and pad have certain contact area, make columnar electrode Keep certain adhesion between body and pad, prevent from being formed between the body of columnar electrode and pad seam Gap, and increase contact resistance or cause open circuit.

Further, the quantity of described through hole is more than 1, fills scolding tin the most in through-holes and forms soldered ball Filling part also greater than 1, soldered ball by multiple filling parts embed columnar electrode body in, increase Soldered ball and the contact area of columnar electrode, soldered ball is many with the bolt rod of the latch structure that columnar electrode is constituted Individual, improve the adhesion between soldered ball and columnar electrode, and formed in through hole and through hole filling part in The row of the rule such as the distribution of lineal layout, matrix distribution, concentric circular, donut distribution, polygon distribution Cloth so that soldered ball is more uniform with the adhesion ratio of all directions of columnar electrode, it is acceptable that soldered ball is subject to External force (making the power that soldered ball departs from columnar electrode) further strengthens, and soldered ball is difficult to from columnar electrode Come off.

Further, described soldered ball also includes opotism portion, opotism portion and the sidewall of the first opening, this body sidewall Face, three, part metals barrier layer on part metals barrier layer and pad contacts, opotism subordinate part Width is more than the width of upper part so that opotism portion is L-shaped, and opotism portion is at the body of columnar electrode Outside side wall has the function being similar to bracing frame, and it is acceptable that the opotism portion of " L " type makes that soldered ball is subject to Lateral external forces (making the power that soldered ball departs from columnar electrode) greatly strengthen, soldered ball be difficult to from column electricity Come off on extremely.

Accompanying drawing explanation

Fig. 1 is the structural representation of semiconductor device in prior art；

Fig. 2 is the schematic flow sheet of the forming method of first embodiment of the invention semiconductor device；

Fig. 3 ~ Figure 15 is the structural representation of the forming process of first embodiment of the invention semiconductor device；

Figure 16 is the schematic flow sheet of the forming method of second embodiment of the invention semiconductor device；

Figure 17 ~ Figure 28 is the structural representation of the forming process of second embodiment of the invention semiconductor device；

Figure 29 is the schematic flow sheet of third embodiment of the invention method for forming semiconductor devices；

Figure 30 ~ Figure 40 is the structural representation of the forming process of third embodiment of the invention semiconductor device.

Detailed description of the invention

In the semiconductor device of existing wafer level CSP structure, due to soldered ball and columnar electrode upper surface Contact, both contacts area are less, and soldered ball is poor with the adhesion of columnar electrode, by external force During effect, soldered ball easily comes off from the surface of columnar electrode or produces on the soldered ball contact surface with columnar electrode Raw crack, is unfavorable for the carrying out of subsequent encapsulating process so that packaging easily lost efficacy.

For solving the problems referred to above, inventor proposes a kind of semiconductor device, the post in described semiconductor device Shape electrode includes body and is positioned in described body and runs through the through hole of described body, the weldering on columnar electrode Bag includes the metal plush copper being positioned at columnar electrode bodies top surface and the filling part filling described through hole, weldering Ball and columnar electrode constitute the structure of a kind of similar latch, therefore soldered ball not only with the top table of columnar electrode Face contacts, and contacts with the inside of columnar electrode, and soldered ball increases with the contact area of columnar electrode, Both adhesions strengthen so that the acceptable external force that soldered ball is subject to (makes soldered ball and columnar electrode depart from Power) greatly strengthen, soldered ball is difficult to come off from columnar electrode.

Understandable, below in conjunction with the accompanying drawings for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from The detailed description of the invention of the present invention is described in detail.When describing the embodiment of the present invention in detail, for ease of saying Bright, schematic diagram can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, and it is at this Should not limit the scope of the invention.Additionally, length, width and the degree of depth should be comprised in actual fabrication Three-dimensional space.

First embodiment

With reference to the schematic flow sheet of the forming method that Fig. 2, Fig. 2 are first embodiment of the invention semiconductor device, Including step:

Step S21, it is provided that semiconductor base, described semiconductor base has some pads；

Step S22, forms the first insulating barrier on described semiconductor base, and described first insulating barrier has cruelly Reveal the first opening of described pad；

Step S23, is formed plant at the sidewall of described first opening and the surface of bottom and the first insulating barrier Sublayer；

Step S24, forms the first photoresist layer on the surface of described Seed Layer, and described first photoresist layer is filled out It is full of the first opening；The first photoresist layer in graphical first opening, is formed and exposes Seed Layer surface Groove, in groove, remaining part photoresist is as the first photoresist layer column, the first photoresist layer column Quantity is more than or equal to one, and the diameter of described groove is equal to the diameter of the first opening, the lower part side of groove The sidewall of wall and the first opening overlaps；

Step S25, in a groove filler metal, form the body of columnar electrode, the top table of described body Face and the flush of the first insulating barrier；

Step S26, removes the first photoresist layer outside the first photoresist layer column and body, the first light The position that photoresist layer column is corresponding forms through hole, described through hole and body and constitutes columnar electrode；

Step S27, removes the described Seed Layer of part with described columnar electrode for mask；Described columnar electrode Top surface and the inside side walls surface of body are also formed with metal barrier, the thickness of metal barrier Radius less than through hole；

Step S28, is placed in described first surface of insulating layer, described printing net by Printing screen or corrosion resistant plate Plate or corrosion resistant plate have the described columnar electrode body of exposure and the 3rd opening of through hole；

Step S29, fills full weld tin cream in described 3rd opening and through hole；Remove described Printing screen or Corrosion resistant plate；Described solder(ing) paste is carried out reflux technique, columnar electrode top formed metal plush copper and Through hole is formed filling part, described metal plush copper and filling part and constitutes soldered ball.

Below in conjunction with accompanying drawing 3 ~ 15, above-mentioned concrete process is described in detail.

With reference to Fig. 3, it is provided that semiconductor base 200, described semiconductor base 200 has some chips (figure Not shown in), semiconductor base 200 also has the some pads 201 being connected with chip, described pad 201 are made up of aluminum, copper, the material such as golden or silver-colored, only illustrate that a pad is as example in the present embodiment.

Then forming one layer of passivation layer 202 on semiconductor base 200, described passivation layer 202 has exposure Bond pad surface or the opening of part surface, described passivation layer 202 is used for protecting shape on semiconductor base 200 The chip become, the material of described passivation layer 202 is silicon nitride, Pyrex, phosphorosilicate glass or boron phosphorus silicon Glass or polyimides (polyimide) etc..

Then form the first insulating barrier 203 on described passivation layer 202 surface, described first insulating barrier 203 has Having the described bond pad surface of exposure or the first opening 204 of part surface, formed in aforementioned passivation layer 202 opens Mouth is as a part for the first opening 204.Described first insulating barrier 203 is as electrically isolating layer and sealing Material layer, the material of described first insulating barrier 203 is polybenzoxazoles (polybenzoxazole, PBO) Or the organic resin such as polyimides (polyimide).In the present embodiment, described first insulating barrier 203 Before being formed on columnar electrode, prevent after columnar electrode is formed, then when forming the first insulating barrier, The first insulant filled in the through hole of columnar electrode is not easily removed, and to column electricity when removing The damage of the body of pole.

In other embodiments of the invention, described first insulating barrier be formed on columnar electrode after Being formed, detailed process is: form columnar electrode in bond pad surface；Form first the most over the passivation layer exhausted Edge layer, the surface of the first insulating barrier is concordant with the top surface of columnar electrode；Then remove columnar electrode to lead to The first insulating barrier in hole or simultaneously remove part first insulating barrier of columnar electrode surrounding；Last at post Soldered ball is formed on shape electrode.

With reference to Fig. 4, at the surface of described first insulating barrier 203 and the bottom of the first opening 204 and sidewall Form Seed Layer 205.

Described Seed Layer 205 forms power supply layer during columnar electrode body as follow-up plating.Described seed Layer 205 is chromium metal level or titanium coating or tantalum metal layer single layer structure or chromium metal level or titanium The stacked structure of the multilamellar of layer or tantalum metal layer and copper metal layer or gold metal layer or silver metal layer, described kind Sublayer 205 is formed by sputtering technology, and described Seed Layer 205 is also used as diffusion impervious layer, prevents The metal in the columnar electrode being subsequently formed diffusion in the first insulating barrier 203 and strengthen columnar electrode gold Belong to the adhesive force with the first insulating barrier 203.

Open it should be noted that follow-up the first opening mentioned is remaining after each meaning formation Seed Layer 205 Mouthful.

With reference to the plan structure schematic diagram that Fig. 5 and Fig. 6, Fig. 6 are Fig. 5, at the table of described Seed Layer 205 Face forms the first photoresist layer 206, and described first photoresist layer 206 fills full first opening 204(reference Fig. 4)；The first photoresist layer in graphical first opening 204, forms the groove exposing Seed Layer surface 207, in groove 207, remaining part the first photoresist is as the first photoresist layer column 211, the first light The quantity of photoresist layer column 211 is more than or equal to one, and the diameter of described groove 207 is equal to the first opening 204 Diameter c, the sidewall of the lower part sidewall of groove 207 and the first opening 204 overlaps, outside groove 207 The section shape of the section shape of side sidewall and the sidewall of the first opening 204 is identical.It is to be noted this The diameter of inventive embodiments further groove (or body) refers to that the outside side wall of groove (or body) one end arrives The longest distance of other end outside side wall, the width of groove (or body) refers to groove (or body) outward Side sidewall is to the vertical dimension of inside side walls.

The formation process of described groove 207 is exposed and developed technique.Groove 207 is subsequently used for filling gold Belong to the body forming columnar electrode, after the first follow-up removal of photoresist layer column 211, form columnar electrode Through hole.It should be noted that in the embodiment of the present invention, groove has at least one first photoresist layer Column, refers to that the first photoresist layer column will not contact with the outside side wall of groove.

In the present embodiment, described first photoresist layer column 211 is one, the first photoresist layer column 211 Being positioned at the centre position of groove 207, the cross-section structure of the sidewall of the first photoresist layer column 211 is circle, The sidewall profile of described first opening 204 is shaped as circle, and the inside side walls of groove 207 is circle, whole recessed The section shape of groove 207 is annulus, and the radius of described first photoresist layer column 211 is wide with groove 207 The ratio of degree a is 1/10 ~ 10/1, and the radius of the preferably first photoresist layer column 211 is wide with groove 207 The ratio of degree is 1:3 ~ 3:1, when being subsequently formed columnar electrode so that the radius of the through hole of columnar electrode and basis The ratio of the width of body be 1/10 ~ 10/1 so that the body of columnar electrode has certain width, it is ensured that The mechanical strength of body, and make the lower surface of the body of columnar electrode have certain contact area with pad, Make to keep between the body of columnar electrode and pad certain adhesion, prevent body and the weldering of columnar electrode Form gap between dish, and increase contact resistance or cause open circuit.

In an alternative embodiment of the invention, when the first photoresist layer column quantity is 1, described first opens Mouthful sidewall profile can be square or other polygon, the section shape of groove outside side wall and the The sidewall profile shape of one opening is identical, the section shape of the sidewall of the first photoresist layer column can be circle, Square or other polygon.

In another embodiment of the present invention, when the first photoresist layer column quantity is 1, described groove Including some with the first photoresist layer column center for the center of circle in the independent sub-groove being angularly distributed, phase It is filled with the first photoresist layer, when being subsequently formed columnar electrode and soldered ball so that soldered ball between adjacent sub-groove Bigger with the contact area of columnar electrode, be conducive to improving the adhesion between soldered ball and columnar electrode.Tool Body, sectional view is annulus a section of described sub-groove.

In another embodiment of the present invention, when the first photoresist layer column quantity is more than 1, the first light Photoresist layer column is independently distributed in a groove, refer to Fig. 7, makees with four the first photoresist layer columns 211 For example, the first photoresist layer column 211 is independently distributed in groove 207, four photoresist columns 211 Arrange in matrix, follow-up when removing the first photoresist layer column 211, shape in the body of columnar electrode Become the through hole of four matrix arrangements, form the filling part of soldered ball the most in through-holes.

In another embodiment of the present invention, when the first photoresist layer column quantity is more than 1, described the The arrangement of one photoresist layer column can also is that straight line distribution, a plurality of parallel lineal layout, intersection Lineal layout, concentric circular distribution, donut distribution, polygon distribution, five-pointed star distribution, by recessed Some radiation profile that groove center is outside or be randomly distributed, stand at follow-up removal the first photoresist layer During post, the position of the through hole formed in the body of columnar electrode is relative with the position of the first photoresist layer column Should, the arrangement of some through holes can be straight line distribution, a plurality of parallel lineal layout, intersection straight Line distribution, concentric circular distribution, donut distribution, polygon distribution, five-pointed star are distributed, by groove Some radiation profile that the heart is outside or be randomly distributed.It should be noted that in the embodiment of the present invention The arrangement modes such as lineal layout, the lineal layout of intersection, concentric circular distribution refer to the first photoresist layer column The figure that the line of centres overlooking figure on a semiconductor substrate is constituted, follow-up through hole and filling part Also it is similar to.

With reference to Fig. 8, at described groove 207(with reference to Fig. 5) in filler metal, form the basis of columnar electrode Body 208, the top surface of the body 208 of described columnar electrode and the flush of the first insulating barrier 203 or Person is slightly above the surface of the first insulating barrier.

The metal of described filling is copper, and the technique of filler metal is electroplating technology, the body 208 of columnar electrode The time that can be electroplated by control of height control.

With reference to the plan structure schematic diagram that Fig. 9 and Figure 10, Figure 10 are Fig. 9, (in Figure 10, Seed Layer is not shown Go out), remove described first photoresist layer column 211(with reference to Fig. 8) and columnar electrode body 208 it Outer photoresist layer 206(is with reference to Fig. 8), formed logical in the position of the first photoresist layer column 211 correspondence Hole 209, described through hole 209 and body 208 constitute columnar electrode 210.Follow-up in described through hole 209 fill out Fill scolding tin and form the filling part of soldered ball.

Then, with described columnar electrode 210 as mask, the Seed Layer on the first insulating barrier 203 is removed, Before removal, photoresist mask layer can be formed on columnar electrode 210 surface, removing Some seeds During Ceng, the Seed Layer of protection body 208 and via bottoms is not damaged, and is removing first After Seed Layer on insulating barrier 203, remove described photoresist mask layer.

In the present embodiment, after removing a first photoresist column 211, in the body of columnar electrode A through hole 209, follow-up scolding tin of filling in 209 through holes, the filling part of formation soldered ball is formed between.Institute State that the ratio of the radius of through hole 209 and the width b of body 208 is 1/10 ~ 10/1, preferably through hole 209 The ratio 1:3 ~ 3:1 of width of radius and body 208 so that the body 208 of columnar electrode has necessarily Width, it is ensured that the mechanical strength of body 208, and make body 208 lower surface and the weldering of columnar electrode Dish has certain contact area, makes to keep between body 208 and the pad of columnar electrode certain adhesion, Prevent from being formed between body 208 and the pad of columnar electrode gap, and increase contact resistance or cause disconnected Road.

In other embodiments of the invention, when the first photoresist layer column quantity is more than 1, remove The through hole that first photoresist layer column is correspondingly formed be more than 1, the arrangement of through hole be straight line distribution, A plurality of parallel lineal layout, the lineal layout of intersection, concentric circular distribution, donut distribution, polygon Shape distribution, five-pointed star distribution, by the outside some radiation profile in the center of body or be randomly distributed. It is to remove four in matrix after the first photoresist layer column of arrangement with reference to Figure 11, Figure 11, columnar electrode Four formed in body 209 are arrangement through hole 209 in matrix.

With reference to Figure 12, form metal at the sidewall of through hole 209 and the top surface of bottom and body 208 Barrier layer 212.

In the embodiment of the present invention, between soldered ball and the body of columnar electrode, form layer of metal barrier layer 212, for preventing the body 208 of columnar electrode from directly contacting with soldered ball, prevent soldered ball and columnar electrode Contact surface forms the copper and tin intermetallic compound of fragility, improves the reliability of solder joint.And it is of the prior art When soldered ball directly contacts with columnar electrode, in the environment of high temperature, the copper in columnar electrode can be rapidly to weldering The stannum of ball spreads, forms copper and tin intermetallic compound, due to copper at columnar electrode and data area interface Sn intermetallic compound fragility is relatively big, can reduce the mechanical strength of contact interface, cause solder joint between metal Compound and the borderline damage of solder or cracking, the reliability of impact welding.

Described metal barrier 212 is the double-decker of nickel stannum, the double-decker of nickeline, the bilayer of nickel gold Structure or nickel and the double-decker of ashbury metal, tin layers, silver layer, layer gold or tin alloy layers are formed at nickel dam Surface, for preventing the oxidation of nickel, in the present embodiment, double for nickel stannum of described metal barrier 212 Rotating fields, nickel desirably prevents the diffusion that copper is outside, even if having part copper and stannum to metal barrier 212 Middle diffusion, the ambrose alloy compound formed at the interface of metal barrier 212 and columnar electrode has higher Intensity and good pyroelectricity, the nickel tin compound formed at the interface of metal barrier 212 and soldered ball Higher intensity, hardness are high, surface is uniform, thus without the mechanical strength bringing existing contact interface The problems such as reduction and welding damage.

The thickness of metal barrier 212, less than the radius of through hole 209, prevents metal barrier from blocking through hole 209。

The formation process of described metal barrier 212 is chemical plating process, and chemical plating process can be with selectivity Metallic surface formed metal barrier 212.

When carrying out chemical plating process, ultrasonic wave concussion can be used, prevent during chemical plating, change When learning plating liquor entrance through hole 209, in through hole, form bubble, affect the formation of metal barrier 212. The frequency of described ultrasound wave is more than 20KHz.

When carrying out chemical plating process, described chemical plating chamber can be applied more than 1 normal atmosphere Pressure so that chemical plating solution has a pressure, chemical plating solution is easier to enter in through hole 209, no Bubble can be formed in through hole.

With reference to Figure 13, Printing screen or corrosion resistant plate 216 are placed in described first insulating barrier 203 surface, Described Printing screen or corrosion resistant plate 216 have body 208 and the through hole 209 exposing described columnar electrode 3rd opening of (with reference to Figure 12)；Full weld tin cream 217 is filled in the 3rd opening and through hole 209.

The formation process of described solder(ing) paste 217 is screen printing technique.

The material of described solder(ing) paste 217 is stannum or ashbury metal.

With reference to Figure 14, remove described Printing screen or corrosion resistant plate.

With reference to Figure 15, to described solder(ing) paste 217(with reference to Figure 14) carry out reflux technique, at columnar electrode Top forms metal plush copper 214 and forms filling part 213, described metal plush copper 214 and filling in through-holes Portion 213 constitutes soldered ball 215.Described reflux technique includes Technology for Heating Processing.

In the present embodiment, when number of openings is 1, the quantity of the filling part 213 of corresponding soldered ball 215 Being 1, soldered ball constitutes latch structure with columnar electrode, and soldered ball contacts from existing list with columnar electrode Plane contact becomes multilevel contact, soldered ball when being acted on by external force, soldered ball and columnar electrode Surface contact surface can disperse partial action power, simultaneously the contacting of the body of the filling part of soldered ball and columnar electrode Face can disperse most active force, thus improves the conjugation between soldered ball and columnar electrode, and soldered ball is subject to To acceptable external force (making the power that soldered ball departs from columnar electrode) greatly strengthen.

In other embodiments of the invention, when the quantity of through hole is more than 1, the soldered ball being correspondingly formed The quantity of filling part also greater than 1, soldered ball embeds in the body of columnar electrode by multiple filling parts, Increase the contact area of soldered ball and columnar electrode, the latch of the latch structure that soldered ball is constituted with columnar electrode Bar is multiple, improves the adhesion between soldered ball and columnar electrode, and formed in through hole filling part in A plurality of parallel lineal layout, the lineal layout of intersection, concentric circular distribution, donut distribution, polygon Shape distribution, five-pointed star distribution, arrangement by rules such as the outside some radiation profile in the center of body, make Obtaining soldered ball more uniform with the adhesion ratio of all directions of columnar electrode, the acceptable external force that soldered ball is subject to (makes The power that soldered ball departs from columnar electrode) further strengthen, soldered ball is difficult to come off from columnar electrode.

In other embodiments of the invention, the formation process of described soldered ball 215 is for planting ball and reflux technique.

The semiconductor device that said method is formed, refer to Figure 15, including: semiconductor base 200, institute State and there is on semiconductor base 200 some pads 201；The passivation layer 202 being positioned on semiconductor base 200 With the stacked structure of the first insulating barrier 203, described stacked structure has described pad 201 surface of exposure First opening；Being positioned at the columnar electrode of the first opening, described columnar electrode includes body 208 and runs through The through hole of described body, the top surface of columnar electrode and the flush or slightly higher of the first insulating barrier 203 Surface in the first insulating barrier 203；It is positioned at the sidewall of through hole and bottom and body 208 top surface Metal barrier 212；Seed Layer 205 between the first opening and columnar electrode body；It is positioned at column Soldered ball 215 on electrode, described soldered ball 215 includes the metal plush copper 214 being positioned at columnar electrode 215 top With the filling part 213 filling full described through hole.

The quantity of described through hole (or filling part) is more than or equal to 1, when described through hole is 1, Corresponding filling part 213 is also 1, and soldered ball constitutes latch structure with columnar electrode, improves soldered ball and post Conjugation between shape electrode, the acceptable external force (making the power that soldered ball departs from columnar electrode) that soldered ball is subject to Greatly strengthen.The ratio of the width of the radius of described through hole and body 208 be 1/10 ~ 10/1, preferably The ratio 1:3 ~ 3:1 of width of radius and body 208 of through hole so that the body 208 of columnar electrode has There is certain width, it is ensured that the mechanical strength of body 208, and make table bottom the body 208 of columnar electrode Face and pad 201 have certain contact area, make to protect between the body 208 of columnar electrode and pad 201 Hold certain adhesion, prevent from being formed between the body 208 of columnar electrode and pad 201 gap, and increase Big contact resistance or cause open circuit, and the soldered ball plane of disruption is easily repeatedly turned by the interference of columnar electrode body Roll over thus increase the absorbability of its failure energy.

When described through hole quantity more than 1 time, the quantity of corresponding filling part 213 also greater than 1, The arrangement of described filling part 213 is straight line distribution, a plurality of parallel lineal layout, the straight line of intersection Distribution, matrix distribution, concentric circular distribution, donut distribution, polygon distribution, five-pointed star distribution, Some radiation profile outside by the center of body or be randomly distributed, soldered ball passes through multiple filling parts Embed in the body of columnar electrode, increase the contact area of soldered ball and columnar electrode, soldered ball and column electricity The bolt rod of the latch structure that pole is constituted is multiple, improves the adhesion between soldered ball and columnar electrode, And form the filling part arrangement in rule in through hole and through hole so that soldered ball and each side of columnar electrode To adhesion ratio more uniform, acceptable external force that soldered ball is subject to (makes the power that soldered ball departs from columnar electrode) Further strengthening, soldered ball is difficult to come off from columnar electrode.

Second embodiment

Flow process signal with reference to the forming method that Figure 16, Figure 16 are second embodiment of the invention semiconductor device Figure, including step:

Step S31, it is provided that semiconductor base, described semiconductor base has some pads；

Step S32, forms the first insulating barrier on described semiconductor base, and described first insulating barrier has cruelly Reveal the first opening of described pad, at the sidewall of described first opening and bottom and the first insulating barrier Surface forms Seed Layer；

Step S33, forms the first photoresist layer on the surface of described Seed Layer, and the first photoresist layer is filled full Described first opening, has the groove exposing Seed Layer surface in the first photoresist layer in the first opening, Having at least one first photoresist layer column in groove, the diameter of described groove is less than described first opening Width；

Step S34, fills full metal in a groove, forms the body of columnar electrode, the top of described body Surface is higher than the surface of the first insulating barrier；

Step S35, removes the first photoresist layer outside the first photoresist layer column and body, the first light The position that photoresist layer column is corresponding forms through hole, described through hole and body and constitutes columnar electrode, simultaneously in institute State be formed between the surrounding outside side wall of columnar electrode and the surrounding sidewall of the first opening annular etching recessed Groove, annular etched recesses exposes the part pad of columnar electrode both sides；

Step S36, is placed in the first surface of insulating layer by Printing screen or corrosion resistant plate, described Printing screen or Corrosion resistant plate has and exposes the 4th of the body of described columnar electrode and through hole and annular etched recesses and open Mouthful；

Step S37, fills full weld tin cream in the 4th opening, through hole and annular etched recesses；

Step S37, removes described Printing screen or corrosion resistant plate；Described solder(ing) paste is carried out reflux technique, In the described metal plush copper and form filling part in through-holes of being formed at columnar electrode top, while at described post Forming opotism portion on the outside side wall of shape electrode body, the upper part in opotism portion is connected with edge under metal plush copper, The lower part in opotism portion is connected with the part pad of columnar electrode both sides and the sidewall of the first opening connects Touching, the width of the lower part in described opotism portion is more than the width of upper part, the surface of the lower part in opotism portion Less than the first insulating barrier surface or with the flush of the first insulating barrier, described metal plush copper, filling part Soldered ball is constituted with opotism portion.

Below in conjunction with accompanying drawing 17 ~ 28, above-mentioned concrete process is described in detail.Need explanation It is that in the second embodiment of the present invention, concrete forming process and the relevant parameter of part-structure refer to this Bright first embodiment, the description part in the second embodiment does not repeats.

With reference to Figure 17 and Figure 18, it is provided that semiconductor base 300, if having on described semiconductor base 300 Dry pad 301；Described semiconductor base is formed the stacking knot of passivation layer 302 and the first insulating barrier 303 Structure, described stacked structure has the opening 304 exposing pad 301 surface；Sidewall and the end at opening 304 Portion and the first insulating barrier 303 surface form Seed Layer 305.

Above-mentioned concrete forming process and associated description refer to the appropriate section of first embodiment, at this not Repeat again.

With reference to Figure 19, form the first photoresist layer 306, the first photoetching on the surface of described Seed Layer 305 Glue-line 306 fills full described first opening 304(with reference to Figure 18), the first photoetching in the first opening 304 Glue-line has the groove 307 exposing Seed Layer surface, groove 307 has at least one first photoresist Layer column 306a, the diameter of described groove 307 is less than the width (groove 307 of described first opening 304 Outside side wall be positioned at the first opening 304).

In the present embodiment, the diameter of groove 307 is less than the width of described first opening 304 so that recessed Outside side wall distance the first opening 304(of groove 307 comprises Seed Layer 303) there is part between sidewall One photoresist layer, the follow-up body forming columnar electrode in groove 307, removing the first photoresist layer After 306 so that ring can be formed between outside side wall and the sidewall of the first opening 304 of the body of columnar electrode Shape etched recesses, when forming soldered ball, the beneficially formation in soldered ball " L " type opotism portion.

In described groove 307, the quantity of the first photoresist layer column 306a is more than or equal to one, the first photoetching Arrangement concrete for glue-line column 306a refer to the associated description in the first embodiment of the present invention.

With reference to Figure 20, electroplating technology is used to refer to Figure 30 7 at described groove 307() fill full metal, Form the body 308 of columnar electrode.

The surface higher than the first insulating barrier 303 of the top surface of the body 308 of columnar electrode.

With reference to the plan structure schematic diagram that Figure 21 and Figure 22, Figure 22 are Figure 21, remove the first photoresist layer Column 306a(is with reference to Figure 20) and body 308 outside the first photoresist layer 306, the first photoresist Position corresponding for layer column 306a forms through hole 309, and described through hole 309 and body 308 constitute column electricity Pole 310, simultaneously between the surrounding outside side wall and the surrounding sidewall of the first opening 304 of described columnar electrode Being formed with annular etched recesses 304a, annular etched recesses 304a is a part for the first opening, and annular is carved Erosion groove 304a exposes the pad upper part Seed Layer 305 of columnar electrode both sides；Remove outside the first opening The first insulating barrier 303 surface and/or the Some Species sublayer of the first opening 304 sidewall.

In other embodiments of the invention, the Seed Layer of described first opening sidewalls is retained or part It is positioned at the first insulating barrier 303 surface, follow-up selective when forming metal barrier on metal so that Form metal barrier in annular etched recesses is shaped as " u "-shaped, at " u "-shaped metal barrier table Solder(ing) paste is filled in face, and when carrying out reflux technique, three faces of solder(ing) paste and " u "-shaped metal barrier contact, Solder(ing) paste and the absorption affinity on metal barrier bed boundary (metal barrier of the mainly first opening sidewalls) The tension force on part solder(ing) paste surface can be offset, when backflow, so that the opotism of the formation of outer body The shape in portion is L-shaped.

With reference to Figure 23, in body 308 surface, inside side walls and outside side wall and the kind of columnar electrode Sub-layer surface forms metal barrier 311, and the concrete technology that metal barrier 311 is formed refer to the present invention First embodiment.

With reference to Figure 24 to Figure 26, Printing screen or corrosion resistant plate 318 are placed in the first insulating barrier 303 surface, Described Printing screen or corrosion resistant plate 318 have body 308 and the through hole exposing described columnar electrode 310 309 and annular etched recesses 304a the 4th opening 319；Then, at the 4th opening 319, through hole 309 fill full weld tin cream 320 with annular etched recesses 304a；Then, described Printing screen or not is removed Rust steel plate 318, concrete forming process refer to the first embodiment of the present invention.

With reference to Figure 27, to described solder(ing) paste 320(with reference to Figure 26) carry out reflux technique, described at post Shape top of electrodes forms metal plush copper 312 and forms filling part 313 in through-holes, simultaneously at described column electricity Opotism portion 315, the upper part in opotism portion 315 and metal plush copper is formed on the outside side wall of pole body 308 312 times part pad (columnar electrodes two along connection, the lower part in opotism portion 312 and columnar electrode both sides Metal barrier 311 on the pad of side) connect and the sidewall of the first opening contacts, described opotism portion The width of the lower part of 315 is less than first more than the width of upper part, the surface of the lower part in opotism portion 315 The surface of insulating barrier 303 or with the flush of the first insulating barrier 303 or higher than the first insulating barrier 303 Surface, described metal plush copper 312, filling part 313 and opotism portion 315 constitute soldered ball 316.

When carrying out reflux technique, the solder(ing) paste at columnar electrode top forms gold under capillary effect Belonging to plush copper 312, columnar electrode top surface is higher than the surface of the first insulating barrier 303, side outside body 308 The solder(ing) paste of wall mid portion and one plane contact of this body sidewall, part solder(ing) paste also can be opened on surface Converge to the direction of metal plush copper under the effect of power, and the annular of body 308 outside side wall bottom etching is recessed Solder(ing) paste in groove and the sidewall of the first opening, body 308 outside side wall upper part metal barrier 311 All contact with the face, 311 3, part metals barrier layer on pad 301, when backflow, the first opening The absorption affinity between solder(ing) paste contact surface in sidewall and annular etched recesses can offset annular etched recesses The part surface tension force in body 308 direction pointing to columnar electrode of interior solder(ing) paste, on pad 301 Absorption affinity between the contact surface of the solder(ing) paste in part metals barrier layer 311 and annular etched recesses also can Offset the solder(ing) paste in part-toroidal etched recesses and point to the partial tension in metal plush copper 312 direction, thus Make to be formed on body 308 outside side wall the opotism portion 315 of " L " type, 315 times, the opotism portion of " L " type The thickness of thickness and first insulating barrier 303 of part is correlated with, the thickness of opotism portion 315 lower part be equal to or Thickness less than the first insulating barrier 303.

Soldered ball 316 includes opotism portion, compared to the first embodiment of the present invention, soldered ball except with body Outside surface contacts with the inside side walls of body, also contact with the outside side wall of body so that soldered ball and column Contact surface and the contact area of electrode increase, further when being acted on by external force so that soldered ball is subject to Active force disperse further, improve the conjugation between soldered ball and columnar electrode.

The opotism portion 315 of " L " type and the sidewall of the first opening, body 308 sidewall sections metal barrier 311 and pad 301 on face, 311 3, part metals barrier layer contact, the opotism portion 315 of " L " type The width of lower part, more than the width of upper part, has the function being similar to bracing frame, the opotism of " L " type Portion makes acceptable lateral external forces (making the power that soldered ball departs from columnar electrode) that soldered ball is subject to greatly Strengthening, soldered ball is difficult to come off from columnar electrode.

With reference to Figure 28, form the on the surface, opotism portion 315 of described first insulating barrier 303 surface and soldered ball Two insulating barriers 317.

Described second insulating barrier 317 is used for sealing and insulating, and prevents the steam in controlling and oxygen from entering into weldering On dish 301 and columnar electrode, cause corrosion.The polybenzoxazoles that described second insulating barrier 317 material is The organic resin such as (polybenzoxazole, PBO) or polyimides (polyimide).

The semiconductor device that said method is formed, refer to 27, including

Semiconductor base 300, described semiconductor base 300 has some pads 301；It is positioned at quasiconductor Passivation layer 302 in substrate 300 and the stacked structure of the first insulating barrier 303, described stacked structure has Expose first opening on described pad 301 surface；It is positioned at the columnar electrode of the first opening, described column Electrode includes body 208 and runs through the through hole of described body 208, and the diameter of columnar electrode is opened less than first The width of mouth, the top surface of columnar electrode is higher than the surface of the first insulating barrier 303；It is positioned at columnar electrode Upper soldered ball 316, described soldered ball 316 includes: is positioned at the metal plush copper 312 at columnar electrode top, fills and lead to The filling part 313 in hole and the opotism portion 315 being positioned on the outside side wall of columnar electrode body 308, opotism portion The upper part of 315 is connected with metal plush copper 312, the lower part in opotism portion 315 and the portion of columnar electrode both sides Divide pad to be connected, and contact with the sidewall of the first opening, the width of the lower part in described opotism portion 315 Degree is more than the width of upper part, and the surface of the lower part in opotism portion 315 is less than the table of the first insulating barrier 303 Face or with the flush of the first insulating barrier 303 or higher than the surface of the first insulating barrier 303；It is positioned at soldered ball Metal barrier 311 between 316 and columnar electrode body；Between columnar electrode and pad 301 Seed Layer.

3rd embodiment

With reference to the schematic flow sheet that Figure 29, Figure 29 are third embodiment of the invention method for forming semiconductor devices, Including step:

Step S41, it is provided that semiconductor base, described semiconductor base has some pads；

Step S42, forms the first insulating barrier on described semiconductor base, and described first insulating barrier has cruelly Reveal the first opening of described pad；

Step S43, is formed plant at the sidewall of described first opening and the surface of bottom and the first insulating barrier Sublayer；

Step S44, forms wiring layer again in Some Species sub-layer surface, then wiring layer fills full first opening； The surface of wiring layer again outside the first opening forms columnar electrode；

Step S45, forms the 3rd photoresist layer in described wiring layer again and Some Species sub-layer surface, and described the Three photoresist layers have the groove on the surface of wiring layer again exposed outside the first opening, have at least one in groove Individual 3rd photoresist layer column；

Step S46, fills full metal in described groove, forms the body of columnar electrode；Remove the 3rd light The 3rd photoresist layer outside photoresist layer column and body, the position shape that the 3rd photoresist layer column is corresponding Through hole, described through hole and body is become to constitute columnar electrode；With described columnar electrode as mask, remove part Described Seed Layer；

Step S47, forms the second insulating barrier at described wiring layer again and part the first surface of insulating layer, described The surface of the second insulating barrier is less than the top surface of columnar electrode；

Step S48, forms the 4th photoresist layer, described 4th photoresist layer at described second surface of insulating layer There is the 6th opening exposing part the second insulating barrier outside columnar electrode and columnar electrode；With described The body of four photoresist layers and columnar electrode is mask, removes part the second insulating barrier in through hole, simultaneously Remove part the second insulating barrier outside columnar electrode, formed outside columnar electrode and expose wiring layer table again The annular etched recesses in face；

Step S49, removes described 4th photoresist layer；Printing screen or corrosion resistant plate are placed in described second Surface of insulating layer, described Printing screen or corrosion resistant plate have the exposure body of columnar electrode, through hole and ring 7th opening of shape etched recesses；Full weld stannum is filled in the 7th opening, through hole and annular etched recesses Cream；Remove described Printing screen or corrosion resistant plate；

Step S50, carries out reflux technique to described solder(ing) paste, described at columnar electrode top formation metal Plush copper and form filling part in through-holes, forms skirt on the outside side wall of described columnar electrode body simultaneously Band portion, the upper part in opotism portion is connected with edge under metal plush copper, the lower part in opotism portion and columnar electrode two The part of side wiring layer again connects and the sidewall of annular etched recesses contacts, the bottom in described opotism portion The width divided is more than the width of upper part, and the surface of the lower part in opotism portion is less than the surface of the second insulating barrier Or with the flush of the second insulating barrier, described metal plush copper, filling part and opotism portion constitute soldered ball.

Above-mentioned detailed process is described in detail by 30 ~ Figure 40 below in conjunction with the accompanying drawings.It should be noted that In the third embodiment of the present invention, concrete forming process and the relevant parameter of part-structure refer to the present invention's First embodiment and the second embodiment, the description part in the 3rd embodiment does not repeats.

With reference to Figure 30, it is provided that semiconductor base 400, described semiconductor base 400 has pad 401； Described semiconductor base is formed passivation layer 402 and the stacked structure of the first insulating barrier 403, described heap Stack structure has the opening exposing pad 401 surface；Exhausted in the sidewall of described opening and bottom and first The surface of edge layer forms Seed Layer 405；Wiring layer 406 again are formed with Seed Layer 405 surface in opening.

The formation process of described wiring layer again 406 is electroplating technology.Follow-up in wiring layer 406 surface shape again Become columnar electrode, relative to directly forming columnar electrode in bond pad surface, be conducive to improving encapsulating structure Density.

With reference to Figure 31, form the 3rd photoresist at described wiring layer again 406 and Some Species sublayer 405 surface Layer 407, described 3rd photoresist layer 407 has the recessed of wiring layer again 406 surface outside exposure the first opening Groove 412, has at least one the 3rd photoresist layer column 407a in groove 412.

In groove 412, the arrangement of the 3rd photoresist layer column 407a specifically refer to first enforcement of the present invention Example, does not repeats them here.

With reference to Figure 32 and Figure 33, use electroplating technology to fill full metal in a groove, form columnar electrode Body 408；Remove the 3rd photoresist layer 407 outside the 3rd photoresist layer column 407a and body 408, 3rd position corresponding for photoresist layer column 407a forms through hole 409, described through hole 409 and body 408 Constitute columnar electrode 410.

With reference to Figure 34, with described columnar electrode 410 and again wiring layer 406 as mask, remove described in part Seed Layer 405.

In this enforcement, the formation of columnar electrode 410 is prior to the formation of the second insulating barrier, after forming Seed Layer, Form again wiring layer and columnar electrode again, Seed Layer as forming again the supply lines of wiring layer and columnar electrode, Remove Some Species sublayer the most again.

With reference to Figure 35, form second at described wiring layer again 406 and part the first insulating barrier 403 surface exhausted Edge layer 411, the surface of described second insulating barrier 411 is less than the top surface of columnar electrode 410.

When the surface of described second insulating barrier 411 is less than the top surface of columnar electrode 410, follow-up removal Part second insulating barrier of columnar electrode outer body forms annular etched recesses, then in the outside of body Sidewall forms the opotism portion of " L " type, is formed and has metal plush copper, filling part and the soldered ball in opotism portion.

In other embodiments of the invention, the surface of described second insulating barrier and the top table of columnar electrode Concordant or slightly below columnar electrode surface, face, is subsequently formed and has filling part and the soldered ball in opotism portion.

With reference to Figure 36, form the 4th photoresist layer 420 on described second insulating barrier 411 surface, described the The part second that four photoresist layers 420 have outside exposure columnar electrode 410 and columnar electrode 410 insulate 6th opening 421 of layer 411；With the body of described 4th photoresist layer 420 and columnar electrode 410 for covering Film, removes part the second insulating barrier in through hole 409, removes the part outside columnar electrode 410 simultaneously Second insulating barrier, outside columnar electrode 410 formed expose again wiring layer 406 surface annular etching recessed Groove 423.

In other embodiments of the invention, when the top on the surface Yu columnar electrode forming the second insulating barrier During flush, form the second insulating barrier at described wiring layer again and part the first surface of insulating layer, described The surface of the second insulating barrier is concordant with the top surface of columnar electrode；Formed at described second surface of insulating layer 4th photoresist layer, described 4th photoresist layer has the 5th opening exposing columnar electrode；With described The body of four photoresist layers and columnar electrode is mask, removes part the second insulating barrier in through hole；Remove Described 4th photoresist layer；Printing screen or corrosion resistant plate are placed in described first surface of insulating layer, described Printing screen or corrosion resistant plate have body and the 8th opening of through hole exposing columnar electrode；Open the 8th Mouth and through hole are filled full weld tin cream；Remove described Printing screen or corrosion resistant plate；Described solder(ing) paste is entered Row reflux technique, forms metal plush copper and forms filling part in through-holes at columnar electrode top, described gold Belong to plush copper and filling part constitutes soldered ball.

With reference to Figure 37, at the top surface of body 408, outside side wall and the inside side walls table of columnar electrode Face and part wiring layer 406 surface again form metal barrier 414；Remove described 4th photoresist layer (ginseng Examine Figure 36)；Printing screen or corrosion resistant plate 425 are placed in described second insulating barrier 411 surface, described print It is recessed that brush web plate or corrosion resistant plate 411 have the exposure body 408 of columnar electrode, through hole 409 and annular etching 7th opening 426 of groove 423.

With reference to Figure 38 and Figure 39, in the 7th opening 426, through hole 408 and annular etched recesses 423(ginseng Examine Figure 37) in fill full weld tin cream 424；Remove described Printing screen or corrosion resistant plate 425.

With reference to Figure 40, described solder(ing) paste is carried out reflux technique, forms gold described at columnar electrode top Belong to plush copper 415 and form filling part 416 in through-holes, simultaneously in the outside of described columnar electrode body 408 " L " shape opotism portion 417, the upper part in " L " shape opotism portion 417 and metal plush copper 415 is formed on sidewall Lower along connecting, the lower part in " L " shape opotism portion 417 and part wiring layer 406 again of columnar electrode both sides Connecting and the sidewall of annular etched recesses contacts, the width of the lower part in described opotism portion 417 is more than The width of upper part, the surface of the lower part in opotism portion 417 less than the second insulating barrier 411 surface or with The flush of the second insulating barrier 411 or the surface higher than the second insulating barrier 411, described metal plush copper 415, Filling part 416 and opotism portion 417 constitute soldered ball 418.

The semiconductor device that said method is formed, refer to Figure 40, including: semiconductor base 400, institute State and there is on semiconductor base 400 pad 401；The passivation layer 402 being positioned on semiconductor base 400 and The stacked structure of one insulating barrier 403, described stacked structure has the first of described pad 401 surface of exposure Opening；It is positioned at the sidewall of opening and bottom and the Seed Layer 405 of the first insulating barrier part surface；It is positioned at kind Wiring layer 406 again on sublayer 405 surface, then wiring layer 406 fills full gate mouth；It is positioned at wiring layer 406 again With second insulating barrier 411 on part the first insulating barrier 403 surface, described second insulating barrier 411 has exposure First open outside divides second opening on wiring layer 406 surface again；It is positioned at the wiring layer again of the second opening The columnar electrode on 406 surfaces, described columnar electrode includes institute's body 408 and runs through the logical of described body 408 Hole, the diameter of columnar electrode is less than the width of the second opening, between the sidewall of columnar electrode and the second opening Having annular etched recesses, the top surface of columnar electrode is higher than the surface of the second insulating barrier 411；It is positioned at Soldered ball 418 on columnar electrode, described soldered ball 418 includes: be positioned at columnar electrode top metal plush copper 415, The filling part 416 filling through hole and the opotism portion 417 being positioned on the outside side wall of columnar electrode body 408, The upper part in opotism portion 417 is connected with metal plush copper 415, the lower part in opotism portion 417 and columnar electrode The part of both sides wiring layer 406 again is connected, and contacts with the sidewall of the second opening, described opotism portion The width of the lower part of 417 is less than second more than the width of upper part, the surface of the lower part in opotism portion 417 The surface of insulating barrier 411 or with the flush of the second insulating barrier 411 or higher than the table of the second insulating barrier 411 Face；Metal barrier 414 between soldered ball 418 and columnar electrode body 408.

To sum up, the semiconductor device of the embodiment of the present invention, the columnar electrode in described semiconductor device includes Body and the through hole being positioned in described body and running through described body, the soldered ball on columnar electrode includes being positioned at The metal plush copper on columnar electrode bodies top surface and the filling part of the described through hole of filling, soldered ball and column electricity Pole constitutes the structure of a kind of similar latch, and therefore soldered ball not only contacts with the top surface of columnar electrode, and And contact with the inside of columnar electrode, soldered ball becomes with the contact from existing monoplane that contacts of columnar electrode For multilevel contact, soldered ball when being acted on by external force, the surface contact surface of soldered ball and columnar electrode Can disperse partial action power, the filling part of soldered ball can disperse greatly with the contact surface of the body of columnar electrode simultaneously The active force of part, thus improve the conjugation between soldered ball and columnar electrode, it is acceptable that soldered ball is subject to External force (making the power that soldered ball departs from columnar electrode) greatly strengthens.

Although the present invention is open as above with preferred embodiment, but it is not for limiting the present invention, appoints What those skilled in the art without departing from the spirit and scope of the present invention, may be by the disclosure above Technical solution of the present invention is made possible variation and amendment by method and technology contents, therefore, every does not takes off From the content of technical solution of the present invention, it is any that above example is made by the technical spirit of the foundation present invention Simple modification, equivalent variations and modification, belong to the protection domain of technical solution of the present invention.

Claims

1. a semiconductor device, it is characterised in that including:

Semiconductor base, described semiconductor base has some pads；

The first insulating barrier being positioned on semiconductor base, described first insulating barrier has the described pad table of exposure First opening in face；

Being positioned at the columnar electrode on described pad, described columnar electrode includes body and runs through described body Through hole, described through hole exposes bond pad surface；

Being positioned at the soldered ball on described columnar electrode, described soldered ball includes that the metal being positioned at columnar electrode top is convex Head and the filling part of the full described through hole of filling；

The quantity of the through hole being positioned in described body is 1, the radius of the through hole of described columnar electrode and basis The ratio of the width of body is 1/10～10/1；

Having some in the seam at quarter being angularly distributed on the body of described columnar electrode, described seam of carving is by body It is divided into some in the independent sub-body being angularly distributed；

Described filling part also fills up the seam at quarter between the most sub-body.

2. semiconductor device as claimed in claim 1, it is characterised in that the cross sectional shape of described body is Annulus or the polygon of hollow.

3. semiconductor device as claimed in claim 1, it is characterised in that the sectional view of described sub-body For annulus one section.

4. semiconductor device as claimed in claim 1, it is characterised in that the surface of the first insulating barrier and post The top surface of shape electrode is concordant, and the width of described first opening is equal to the diameter of columnar electrode, and first opens The sidewall of mouth contacts with the outer surface of columnar electrode.

5. semiconductor device as claimed in claim 1, it is characterised in that the surface of the first insulating barrier is less than The top surface of columnar electrode, the width of described first opening is more than the diameter of columnar electrode.

6. semiconductor device as claimed in claim 5, it is characterised in that described soldered ball also has and is positioned at post Opotism portion on the outside side wall of shape electrode body, the upper part in opotism portion is connected with metal plush copper, opotism The lower part in portion is connected with the part pad of columnar electrode both sides, and connects with the sidewall of the first opening Touching, the width of the lower part in described opotism portion is more than the width of upper part, the surface of the lower part in opotism portion Less than the first insulating barrier surface or with the flush of the first insulating barrier or higher than the table of the first insulating barrier Face.

7. semiconductor device as claimed in claim 6, it is characterised in that the metal plush copper of described soldered ball with Between the bodies top surface of columnar electrode, between filling part and the inside side walls of body and opotism portion And also there is between the outside side wall of body metal barrier.

8. semiconductor device as claimed in claim 7, it is characterised in that described metal barrier for nickel The double-decker of the double-decker of stannum, the double-decker of nickeline, nickel gold or nickel and the double-deck of ashbury metal are tied Structure.

9. semiconductor device as claimed in claim 1, it is characterised in that also include: be positioned at described first The bottom of opening and sidewall and the wiring layer again of part the first surface of insulating layer, described wiring layer again is made For a part for pad, described columnar electrode is positioned at the wiring layer surface again outside the first opening.

10. semiconductor device as claimed in claim 9, it is characterised in that also include: cloth again described in being positioned at Line layer and the second insulating barrier of the first surface of insulating layer, described second insulating barrier has described in expose portion again Second opening on wiring layer surface, columnar electrode is positioned in the second opening.

11. semiconductor device as claimed in claim 10, it is characterised in that the surface of described second insulating barrier Concordant with the top surface of columnar electrode, the width of described second opening is equal to the diameter of columnar electrode, the The sidewall of two openings contacts with the outer surface of columnar electrode.

12. semiconductor device as claimed in claim 10, it is characterised in that the surface of described second insulating barrier Less than the lower surface of columnar electrode, the width of described second opening is more than the diameter of columnar electrode.

13. semiconductor device as claimed in claim 12, it is characterised in that described soldered ball also has and is positioned at post Opotism portion on the outside side wall of shape electrode body, the upper part in opotism portion is connected with metal plush copper, opotism The lower part in portion is connected with the part wiring layer again of columnar electrode both sides, and with the sidewall phase of the second opening Contact, the width of the lower part in described opotism portion is more than the width of upper part, the table of the lower part in opotism portion Face less than the second insulating barrier surface or with the flush of the second insulating barrier or higher than the second insulating barrier Surface.