CN112687676B

CN112687676B - Crimping IGBT sub-module and crimping IGBT module

Info

Publication number: CN112687676B
Application number: CN202011474379.1A
Authority: CN
Inventors: 张文浩; 石廷昌; 常桂钦; 李寒; 李亮星; 董国忠
Original assignee: Zhuzhou CRRC Times Semiconductor Co Ltd
Current assignee: Zhuzhou CRRC Times Semiconductor Co Ltd
Priority date: 2020-12-14
Filing date: 2020-12-14
Publication date: 2023-06-27
Anticipated expiration: 2040-12-14
Also published as: CN112687676A

Abstract

The present disclosure provides a crimping formula IGBT submodule group and crimping formula IGBT module, this crimping formula IGBT submodule group including the interval set up in a plurality of IGBT chips and a plurality of FRD chips of lower electrode plate top. The crimping IGBT module comprises a plurality of crimping IGBT sub-modules; a tube shell comprising a tube cover and a tube seat; the tube seat is of a hollowed-out structure and comprises a plurality of fifth openings and a third skirt edge structure positioned around the fifth openings; the fifth opening is used for exposing the lower electrode plate of each crimping IGBT sub-module; the third skirt edge structure is in contact with the first skirt edge structure of the lower electrode plate so as to realize sealing and packaging. The crimping IGBT module adopts the tube seat with the hollow structure, reduces the thermal resistance on a heat flow path, can realize module sealing in a cold pressure welding or argon arc welding mode under the structure, and simplifies the production flow.

Description

Crimping IGBT sub-module and crimping IGBT module

Technical Field

The disclosure relates to the technical field of semiconductor devices, in particular to a crimping IGBT sub-module and a crimping IGBT module.

Background

Insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBTs) are typical representatives of power electronics and have found widespread use in modern power electronics. The bipolar transistor has the advantages of high input impedance, small control power, simple driving circuit, high switching speed and small switching loss of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), and has the advantages of high current density, reduced saturation voltage and strong current processing capability of a bipolar transistor (Bipolar Junction Transistor, BJT), so that the bipolar transistor is an ideal switching device in the power electronics field.

Along with the continuous improvement of the power transmission capacity, the requirements on the power capacity, the performance and the reliability of the IGBT module are increasingly higher. At present, two types of IGBT modules capable of meeting application requirements are mainly used: a welded IGBT module and a crimped IGBT module. Compared with a welding type IGBT module, the crimping type IGBT module realizes the parallel connection of a plurality of semiconductor chips through pressure. The compression joint type IGBT module has no large-area high-temperature welding and wire bonding in the packaging process, so long as the pressure balance or the pressure change on each semiconductor chip is ensured not to influence the electric and thermal contact of the semiconductor chip, the parallel connection of more semiconductor chips than the welding type IGBT module can be realized theoretically, and the capacity is obviously improved than that of the welding type IGBT module.

The crimping IGBT module is used as a common packaging mode of the IGBT module, realizes electric connection and heat transfer of an internal structure through external pressure, has the characteristics of large through-flow capacity, no welding point, double-sided heat dissipation, high working junction temperature, failure short circuit and the like, can be widely applied to the fields of high-voltage direct current transmission systems, wind power generation, high-voltage high-power industrial equipment driving and the like, and has remarkable competitive advantages.

However, the existing crimping IGBT module is complex in structure, so that the failure risk is increased, the thermal resistance is high, and the production cost is high.

Disclosure of Invention

To above-mentioned problem, the present disclosure provides a crimping formula IGBT submodule group and crimping formula IGBT module, has solved the complicated technical problem that leads to the failure risk big and thermal resistance is high of current crimping formula IGBT module.

In a first aspect, the present disclosure provides a crimping IGBT sub-module comprising:

the lower electrode plate is provided with a first skirt edge structure at the periphery;

a plurality of IGBT chips and a plurality of FRD chips which are arranged above the lower electrode plate at intervals; the lower electrode plate is in contact with the collector of the IGBT chip and the cathode of the FRD chip and is used for leading out the collector of the IGBT chip and the cathode of the FRD chip;

an insulating outer frame disposed over the IGBT chip and the FRD chip; the insulated outer frame comprises a first opening, a second opening and a third opening, and is used for respectively exposing a grid electrode, an emitter electrode of the IGBT chip and an anode of the FRD chip;

the upper electrode plate is arranged at the bottoms of the second opening and the third opening; the upper electrode plate is in contact with the emitter of the IGBT chip and the anode of the FRD chip and is used for leading out the emitter of the IGBT chip and the anode of the FRD chip;

a gate connector disposed within the first aperture; the grid connecting piece is in contact with the grid of the IGBT chip and used for leading out the grid of the IGBT chip.

According to an embodiment of the present disclosure, preferably, in the above crimping IGBT submodule, a contact manner of the lower electrode plate with the collector electrode of the IGBT chip and the cathode of the FRD chip includes pressure contact, sintering, or welding.

According to an embodiment of the present disclosure, preferably, in the above crimping IGBT sub-module, a contact manner between the upper electrode pad and the emitter of the IGBT chip and the anode of the FRD chip includes pressure contact, sintering or welding.

According to an embodiment of the present disclosure, preferably, in the above crimping IGBT sub-module, the gate connector is a spring pin.

According to an embodiment of the present disclosure, preferably, in the above crimping IGBT submodule, the materials of the upper electrode piece and the lower electrode piece include copper-molybdenum alloy or molybdenum.

In a second aspect, the present disclosure provides a crimping IGBT module comprising:

a crimped IGBT sub-module of any one of the several first aspects;

the PCB is positioned above the crimping IGBT sub-module; the PCB circuit board is contacted with the grid connecting piece of the crimping IGBT sub-module, and comprises a plurality of fourth openings for exposing the upper electrode plates of the crimping IGBT sub-modules;

the tube shell comprises a tube cover and a tube seat, wherein the tube cover is positioned above the PCB, and the tube seat is positioned below the crimping IGBT sub-module;

the pipe cover is in contact with the upper electrode plate of the crimping IGBT sub-module through a boss structure, and a second skirt edge structure is arranged on the periphery of the pipe cover;

the tube seat is of a hollowed-out structure and comprises a plurality of fifth openings, a third skirt edge structure positioned around the fifth openings and a fourth skirt edge structure matched with the second skirt edge structure; the fifth opening is used for exposing the lower electrode plate of each crimping IGBT sub-module;

the third skirt edge structure is in contact with the first skirt edge structure of the lower electrode plate, and the fourth skirt edge structure is in contact with the second skirt edge structure so as to realize sealing and packaging.

According to an embodiment of the present disclosure, preferably, in the above crimping IGBT module, a contact manner of the third skirt structure with the first skirt structure of the lower electrode plate includes cold press welding or arc welding.

According to an embodiment of the present disclosure, preferably, in the above crimping IGBT module, the contact manner between the fourth skirt structure and the second skirt structure includes cold press welding or arc welding.

According to an embodiment of the present disclosure, preferably, in the above-mentioned crimping IGBT module, the header further includes a gate terminal, wherein the gate terminal is in contact with the PCB circuit board, and is configured to be electrically connected to a gate of the IGBT chip of each of the crimping IGBT sub-modules through the PCB circuit board.

According to an embodiment of the present disclosure, preferably, in the above crimping IGBT module, a contact manner between the gate terminal and the PCB circuit board includes a screw, soldering, laser welding or bonding.

By adopting the technical scheme, at least the following technical effects can be achieved:

the present disclosure provides a crimping formula IGBT submodule group and crimping formula IGBT module, this crimping formula IGBT submodule group including the interval set up in a plurality of IGBT chips and a plurality of FRD chips of lower electrode plate top. The crimping IGBT module comprises a plurality of crimping IGBT sub-modules; a tube shell comprising a tube cover and a tube seat; the tube seat is of a hollowed-out structure and comprises a plurality of fifth openings and a third skirt edge structure positioned around the fifth openings; the fifth opening is used for exposing the lower electrode plate of each crimping IGBT sub-module; the third skirt edge structure is in contact with the first skirt edge structure of the lower electrode plate so as to realize sealing and packaging. The crimping IGBT sub-module can randomly select the number of chips and the layout mode, has a simple structure, and reduces the process difficulty of the IGBT module. The crimping IGBT module adopts a tube seat with a hollow structure, a copper table structure on the tube seat corresponding to a lower electrode plate of the IGBT sub-module is omitted, the number of stacked layers is reduced, the thermal resistance on a heat flow path is reduced, and under the structure, the module sealing can be realized in a cold pressure welding or argon arc welding mode, and the production flow is simplified.

Drawings

The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification, illustrate the disclosure and together with the description serve to explain, but do not limit the disclosure. In the drawings:

fig. 1 is a schematic structural view of a crimping type IGBT sub-module according to an exemplary embodiment of the present disclosure;

fig. 2 is a schematic cross-sectional structure of a crimping IGBT sub-module according to an exemplary embodiment of the present disclosure;

fig. 3 is an exploded view of a crimping IGBT sub-module shown in an exemplary embodiment of the present disclosure;

fig. 4 is an exploded view of a crimping IGBT module shown in an exemplary embodiment of the present disclosure;

fig. 5 is a schematic cross-sectional structure of a crimping IGBT module according to an exemplary embodiment of the present disclosure;

in the drawings, wherein like parts are designated by like reference numerals throughout, the drawings are not to scale;

100-crimping IGBT sub-modules; 101-a lower electrode plate; 1011-a first skirt structure; 102-IGBT chips; 1021-gate of IGBT chip; 1022-emitter of IGBT chip; 103-FRD chip; 104-insulating outer frames; 1041-a first opening; 1042-a second opening; 1043-a third opening; 105-electrode plate; 106-gate connection; 200-a PCB circuit board; 201-fourth opening; 300-tube cap; 301-a second skirt structure; 400-tube seat; 401-fifth openings; 402-a third skirt structure; 403-a fourth skirt structure; 404-insulating ring.

Detailed Description

The embodiments of the present disclosure will be described in detail below with reference to the drawings and examples, so as to solve the technical problem by applying technical means to the present disclosure, and the implementation process for achieving the corresponding technical effects can be fully understood and implemented accordingly. The embodiments of the present disclosure and various features in the embodiments may be combined with each other without conflict, and the formed technical solutions are all within the protection scope of the present disclosure.

It will be understood that, although the terms "first," "second," "third," etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

For a thorough understanding of the present disclosure, detailed structures will be presented in the following description in order to illustrate the technical solutions presented by the present disclosure. Preferred embodiments of the present disclosure are described in detail below, however, the present disclosure may have other implementations in addition to these detailed descriptions.

Example 1

As shown in fig. 1, 2 and 3, the present embodiment provides a crimping type IGBT sub-module 100, which includes a lower electrode plate 101, an IGBT chip 102, an FRD chip 103, an insulating outer frame 104, an upper electrode sheet 105 and a gate connector 106.

The periphery of the lower electrode plate 101 (i.e., on the sidewall of the lower electrode plate 101) is provided with a first skirt structure 1011, and the material of the lower electrode plate 101 may be a material having a high thermal conductivity and a thermal expansion coefficient (Coefficient of Thermal Expansion, CTE) matching that of the IGBT chip 102 and the FRD chip 103, including, but not limited to, copper-molybdenum alloy or molybdenum.

A plurality of IGBT chips 102 and a plurality of FRD chips 103 are disposed above the lower electrode plate 101 at intervals. The number of IGBT chips 102 is greater than or equal to 2, and the number of frd chips 103 is set according to the need and based on the number of IGBT chips. The number and layout of the IGBT chips 102 and the FRD chips 103 may be arbitrarily selected, and the layout of the chips may be arbitrarily selected according to the required voltage and current levels, without being limited to the configuration shown in fig. 1 to 3. The layout structure is simple, and the process difficulty of the IGBT module is reduced.

Illustratively, the conventional FRD chip 103 current is twice the IGBT chip 102 current, so the ratio of the number of corresponding FRD chips 103 to the number of IGBT chips 102 is 1:2, 2 FRD chips 103 and 4 IGBT chips 102 as shown in fig. 1 to 3.

The IGBT chip 102 and the FRD chip 103 are provided with an upper surface and a lower surface, the grid electrode and the emitter electrode of the IGBT chip 102 are positioned above, and the collector electrode is positioned below; the anode of FRD chip 103 is located above and the cathode is located below.

The lower electrode plate 101 is in contact with the collector of the IGBT chip 102 and the cathode of the FRD chip 103 for drawing out the collector of the IGBT chip 102 and the cathode of the FRD chip 103.

The contact manner of the lower electrode plate 101 and the collector electrode of the IGBT chip 102 and the cathode electrode of the FRD chip 103 includes pressure contact, sintering or welding.

An insulating outer frame 104 is provided over the IGBT chip 102 and the FRD chip 103. The insulating housing 104 includes a first opening 1041, a second opening 1042, and a third opening 1043 for exposing the gate 1021, the emitter 1022, and the anode of the FRD chip 103 of the IGBT chip 102, respectively. That is, the first opening 1041, the second opening 1042, and the third opening 1043 are openings penetrating the four insulating frames 104, the bottom of the first opening 1041 is in contact with the gate 1021 of the IGBT chip 102, the bottom of the second opening 1042 is in contact with the emitter 1022 of the IGBT chip 102, and the bottom of the third opening 1043 is in contact with the anode of the FRD chip 103. The insulating housing 104 can realize the positioning of the gate connector 106 and the upper electrode sheet 105 through the first opening 1041, the second opening 1042 and the third opening 1043.

The upper electrode plate 105 is disposed at the bottom of the second opening 1042 and the third opening 1043. The material of the upper electrode plate 105 may be a material with high thermal conductivity and a coefficient of thermal expansion (Coefficient of Thermal Expansion, CTE) that matches that of the IGBT chip 102 and the FRD chip 103, including, but not limited to, copper-molybdenum alloy or molybdenum.

The upper electrode plate 105 is in contact with the emitter 1022 of the IGBT chip 102 and the anode of the FRD chip 103, and is used for leading out the emitter 1022 of the IGBT chip 102 and the anode of the FRD chip 103.

The contact manner of the upper electrode pad 105 with the emitter 1022 of the IGBT chip 102 and the anode of the FRD chip 103 includes pressure contact, sintering, or soldering.

The gate connector 106 is disposed in the first opening 1041, and the gate connector 106 (the bottom thereof) contacts the gate 1021 of the IGBT chip 102, for guiding out the gate 1021 of the IGBT chip 102. The gate connector 106 may be, but is not limited to, a pogo pin.

The embodiment provides a crimping type IGBT sub-module 100, the crimping type IGBT sub-module 100 comprises a lower electrode plate 101, wherein a first skirt edge structure 1011 is arranged on the periphery of the lower electrode plate 101; a plurality of IGBT chips 102 and a plurality of FRD chips 103 are disposed above the lower electrode plate 101 at intervals. The number and layout modes of the chips can be selected at will, the structure is simple, and the process difficulty of the IGBT module is reduced.

Example two

As shown in fig. 4 and 5, the present embodiment provides a crimping IGBT module on the basis of the first embodiment, which includes the crimping IGBT sub-module 100, the PCB circuit board 200, and the package (not labeled in the figures) in the first embodiment.

The PCB circuit board 200 is located above the crimping IGBT sub-module 100. The PCB 200 contacts the gate connector 106 of the IGBT sub-module 100 to collect the gates of all the IGBT sub-modules 100 onto the total gate of the PCB 200. The PCB circuit board 200 includes a plurality of fourth openings 201 for exposing the upper electrode pads 105 of each of the crimping IGBT sub-modules 100. That is, the PCB 200 is mainly used for extracting the gate of the crimping IGBT sub-module 100.

The tube case comprises a tube cover 300 and a tube seat 400, wherein the tube cover 300 is positioned above the PCB circuit board 200, and the tube seat 400 is positioned below the crimping IGBT sub-module 100.

The tube cover 300 includes a boss structure (not labeled in the figure) and a second skirt structure 301, where the tube cover 300 contacts the upper electrode plate 105 of the crimping IGBT sub-module 100 through the boss structure, and the second skirt structure 301 is disposed at the periphery of the tube cover 300. That is, the boss structure is mated with the second and

third openings

1042 and 1043 of the insulating housing 104 of the crimping type IGBT sub-module 100 such that the boss structure can be contacted with the upper electrode sheet 105 by being inserted into the second and

third openings

1042 and 1043 of the insulating housing 104. It will be appreciated that PCB circuit board 200 is disposed within the gap of the boss structure of tube cover 300.

The tube cover 300 may be made of conductive material such as copper, and the shape of the tube cover 300 may be square, circular or other shapes. The second skirt structure 301 may be made of conductive materials such as molybdenum, copper-molybdenum alloy, and the like.

The tube holder 400 is a hollowed-out structure, and the tube holder 400 comprises a plurality of fifth openings 401, a third skirt structure 402 positioned around the fifth openings 401, a fourth skirt structure 403 matched with the second skirt structure 301, an insulating ring 404 and a gate terminal.

The shape of the stem 400 is identical to that of the cap 300, and the third skirt structure 402 and the fourth skirt structure 403 may be made of a conductive material such as molybdenum, copper-molybdenum alloy, or the like.

The fifth opening 401 is used to expose the lower electrode plate 101 of each crimping IGBT sub-module 100, that is, in this embodiment, the header 400 does not lead out the lower electrode plate 101 in the crimping IGBT sub-module 100 through a conventional copper bench structure, but contacts the first skirt structure 1011 of the lower electrode plate 101 through the third skirt structure 402, so as to realize contact (electrical connection) between the base and the lower electrode plate 101. Compared with the traditional crimping IGBT module, the heat flow path of the embodiment omits a copper table of the tube seat 400, reduces the stacking layer number and obviously reduces the heat resistance.

The third skirt structure 402 includes a portion located at a gap between the lower electrode plates 101 of the crimping type IGBT sub-module 100 and a portion located around the stem 400.

The contact of the third skirt structure 402 with the first skirt structure 1011 of the lower electrode plate 101 includes cold press welding or arc welding.

The fourth skirt structure 403 contacts the second skirt structure 301 to achieve a sealed encapsulation of the tube cap 300 and tube socket 400. The contact between the fourth skirt structure 403 and the second skirt structure 301 may include cold welding or arc welding.

In the embodiment, the cold pressure welding process can be reserved on the premise of not sacrificing the tightness of the module, and the production flow is simplified.

The fourth skirt structure 403 of the stem 400 is isolated from the portion of the third skirt structure 402 surrounding the stem 400 by an insulating ring 404.

The gate terminals are in contact with the PCB circuit board 200 for electrical connection with the gates of the IGBT chips 102 of the respective crimping IGBT sub-modules 100 through the PCB circuit board 200.

The contact of the gate terminal with the PCB circuit board 200 may include screws, soldering, laser welding or bonding.

The embodiment provides a crimping type IGBT module, which comprises a plurality of crimping type IGBT sub-modules 100; a cartridge including a cap 300 and a socket 400; wherein, the tube cover 300 contacts with the upper electrode plate 105 of the crimping IGBT sub-module 100 through a boss structure, and the periphery of the tube cover 300 is provided with a second skirt edge structure 301; the tube seat 400 is in a hollowed-out structure, and the tube seat 400 comprises a plurality of fifth openings 401, a third skirt structure 402 positioned around the fifth openings 401 and a fourth skirt structure 403 matched with the second skirt structure 301; the fifth opening 401 is used for exposing the lower electrode plate 101 of each crimping IGBT sub-module 100; the third skirt structure 402 is in contact with the first skirt structure 1011 of the lower electrode plate 101 and the fourth skirt structure 403 is in contact with the second skirt structure 301 to achieve a sealed package. The crimping IGBT module adopts a tube seat with a hollow structure, a copper table structure on the tube seat corresponding to a lower electrode plate of the IGBT sub-module is omitted, the number of stacked layers is reduced, the thermal resistance on a heat flow path is reduced, and under the structure, the module sealing can be realized in a cold pressure welding or argon arc welding mode, and the production flow is simplified.

The foregoing is merely a preferred embodiment of the present disclosure, and is not intended to limit the present disclosure, so that various modifications and changes may be made to the present disclosure by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure. While the embodiments of the present disclosure are described above, the disclosure is not limited to the embodiments employed for the convenience of understanding the present disclosure. Any person skilled in the art to which this disclosure pertains will appreciate that numerous modifications and variations in form and detail can be made without departing from the spirit and scope of the disclosure, but the scope of the disclosure is still subject to the scope of the appended claims.

Claims

1. Crimping IGBT submodule group, its characterized in that includes:

2. The crimped IGBT sub-module of claim 1 wherein the manner of contact of the lower electrode plate with the collector of the IGBT chip and the cathode of the FRD chip comprises pressure contact, sintering, or welding.

3. The crimped IGBT sub-module of claim 1 wherein the contact of the upper electrode pad with the emitter of the IGBT chip and the anode of the FRD chip comprises pressure contact, sintering, or welding.

4. The crimped IGBT sub-module of claim 1 wherein the gate connector is a spring pin.

5. The crimping IGBT sub-module of claim 1 wherein the material of the upper electrode pad and the lower electrode pad comprises copper molybdenum alloy or molybdenum.

6. A crimping IGBT module, comprising:

a number of crimped IGBT sub-modules according to any one of claims 1 to 5;

7. The crimping IGBT module of claim 6 wherein the third skirt structure contacts the first skirt structure of the lower electrode plate by cold press welding or arc welding.

8. The crimped IGBT module of claim 6 wherein the fourth skirt structure is in contact with the second skirt structure by cold press welding or arc welding.

9. The crimped IGBT module of claim 6, wherein the header further comprises a gate terminal, wherein the gate terminal is in contact with the PCB circuit board for electrical connection with the gate of the IGBT chip of each of the crimped IGBT sub-modules through the PCB circuit board.

10. The crimped IGBT module of claim 9, wherein the manner of contact of the gate terminal with the PCB circuit board comprises screws, soldering, laser welding or bonding.