CN112687676A

CN112687676A - Crimping type IGBT sub-module and crimping type IGBT module

Info

Publication number: CN112687676A
Application number: CN202011474379.1A
Authority: CN
Inventors: 张文浩; 石廷昌; 常桂钦; 李寒; 李亮星; 董国忠
Original assignee: Zhuzhou CRRC Times Semiconductor Co Ltd
Current assignee: Zhuzhou CRRC Times Semiconductor Co Ltd
Priority date: 2020-12-14
Filing date: 2020-12-14
Publication date: 2021-04-20
Anticipated expiration: 2040-12-14
Also published as: CN112687676B

Abstract

The utility model provides a crimping formula IGBT submodule group and crimping formula IGBT module, this crimping formula IGBT submodule group including the interval set up in a plurality of IGBT chips and a plurality of FRD chip of plate electrode top down. The crimping type IGBT module comprises a plurality of crimping type IGBT sub-modules; a tube shell including a tube cap and a tube base; the tube seat is of a hollow structure and comprises a plurality of fifth openings and a third skirt edge structure positioned around the fifth openings; the fifth opening is used for exposing the lower electrode plate of each crimping type IGBT sub-module; the third skirt structure is in contact with the first skirt structure of the lower electrode plate to realize sealed packaging. The crimping type IGBT module adopts the tube seat with the hollow structure, so that the thermal resistance on a heat flow path is reduced, and the module can be sealed by adopting a cold pressure welding or argon arc welding mode under the structure, so that the production flow is simplified.

Description

Crimping type IGBT sub-module and crimping type IGBT module

Technical Field

The disclosure relates to the technical field of semiconductor devices, in particular to a crimping type IGBT sub-module and a crimping type IGBT module.

Background

Insulated Gate Bipolar Transistors (IGBTs), which are representative of power electronic devices, are widely used in modern power electronics. The Bipolar Junction Transistor has the advantages of high input impedance, small control power, simple driving circuit, high switching speed and small switching loss of a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), and also has the advantages of large current density, low saturation voltage and strong current processing capability of a Bipolar Junction Transistor (BJT), so that the Bipolar Junction Transistor is an ideal switching device in the Field of power electronics.

With the continuous improvement of the transmission capacity, higher and higher requirements are put forward on the power capacity, performance and reliability of the IGBT module. The IGBT module that can satisfy the application demand at present mainly has two kinds: a welding type IGBT module and a crimping type IGBT module. In contrast to the soldering type IGBT module, the crimping type IGBT module realizes parallel connection of a plurality of semiconductor chips by pressure. The packaging process of the crimping type IGBT module is free of large-area high-temperature welding and wire bonding, as long as pressure balance on each semiconductor chip is ensured or pressure change does not affect electric and thermal contact of the semiconductor chip, theoretically, more semiconductor chips can be connected in parallel compared with the welding type IGBT module, and the capacity is obviously improved compared with the welding type IGBT module.

The crimping type IGBT module is used as a common packaging mode of the IGBT module, realizes electrical connection and heat transfer of an internal structure through external pressure, has the characteristics of large through-current capacity, no welding point, double-sided heat dissipation, high working junction temperature, failure short circuit and the like, can be widely applied to the fields of high-voltage direct-current power transmission systems, wind power generation, high-voltage high-power industrial equipment driving and the like, and has remarkable competitive advantages.

However, the existing crimping type IGBT module has a complex structure, which not only increases the failure risk, but also has high thermal resistance and high production cost.

Disclosure of Invention

To the above problem, the present disclosure provides a crimping type IGBT sub-module and a crimping type IGBT module, which solves the technical problems of large failure risk and high thermal resistance caused by the complex structure of the existing crimping type IGBT module.

In a first aspect, the present disclosure provides a crimping type IGBT sub-module, including:

the electrode plate comprises a lower electrode plate, wherein a first skirt edge structure is arranged on the periphery of the lower electrode plate;

the IGBT chips and the FRD chips are arranged above the lower electrode plate at intervals; the lower electrode plate is in contact with a collector electrode of the IGBT chip and a cathode of the FRD chip and is used for leading out the collector electrode of the IGBT chip and the cathode of the FRD chip;

the insulating outer frame is arranged above the IGBT chip and the FRD chip; the insulated outer frame comprises a first opening, a second opening and a third opening, and the first opening, the second opening and the third opening are used for respectively exposing the grid electrode and the emitting electrode of the IGBT chip and the anode of the FRD chip;

the upper electrode plates are arranged at the bottoms of the second opening and the third opening; the upper electrode plate is in contact with an emitting electrode of the IGBT chip and an anode of the FRD chip and is used for leading out the emitting electrode of the IGBT chip and the anode of the FRD chip;

the grid connecting piece is arranged in the first opening; the grid connecting piece is in contact with the grid of the IGBT chip and used for leading out the grid of the IGBT chip.

According to an embodiment of the present disclosure, in the crimping IGBT sub-module, the contact manner between the lower electrode plate and the collector of the IGBT chip and the cathode of the FRD chip preferably includes pressure contact, sintering or welding.

According to an embodiment of the present disclosure, preferably, in the crimping IGBT sub-module, the contact manner between the upper electrode plate and the emitter of the IGBT chip and the anode of the FRD chip includes pressure contact, sintering, or welding.

According to an embodiment of the present disclosure, preferably, in the crimping type IGBT sub-module, the gate connector is a pogo pin.

According to an embodiment of the present disclosure, preferably, in the above crimping IGBT sub-module, the material of the upper electrode plate and the lower electrode plate includes a copper-molybdenum alloy or molybdenum.

In a second aspect, the present disclosure provides a crimp-style IGBT module comprising:

the crimping type IGBT sub-module of any one of the first aspects;

the PCB circuit board is positioned above the crimping type IGBT sub-module; the PCB is in contact with the grid connecting piece of the crimping type IGBT sub-module, and comprises a plurality of fourth holes for exposing the upper electrode plate of each crimping type IGBT sub-module;

the tube shell comprises a tube cover and a tube seat, the tube cover is positioned above the PCB, and the tube seat is positioned below the crimping type IGBT sub-module;

the tube cover is in contact with an upper electrode plate of the crimping type IGBT sub-module through a boss structure, and a second skirt structure is arranged on the periphery of the tube cover;

the tube seat is of a hollow structure and comprises a plurality of fifth openings, a third skirt edge structure positioned around the fifth openings and a fourth skirt edge structure matched with the second skirt edge structure; the fifth opening is used for exposing the lower electrode plate of each crimping type IGBT sub-module;

the third skirt edge structure is in contact with the first skirt edge structure of the lower electrode plate, and the fourth skirt edge structure is in contact with the second skirt edge structure, so that sealing packaging is realized.

According to an embodiment of the present disclosure, in the crimping IGBT module, preferably, the contact manner between the third skirt structure and the first skirt structure of the lower electrode plate includes cold pressure welding or arc welding.

According to an embodiment of the present disclosure, in the crimping IGBT module, preferably, the contact manner between the fourth skirt structure and the second skirt structure includes cold welding or arc welding.

According to an embodiment of the present disclosure, preferably, in the above crimping type IGBT module, the socket further includes a gate terminal, where the gate terminal contacts the PCB circuit board for electrically connecting with the gate of the IGBT chip of each crimping type IGBT sub-module through the PCB circuit board.

According to an embodiment of the present disclosure, in the press-fit IGBT module, the contact manner between the gate terminal and the PCB includes a screw, soldering, laser welding or bonding.

By adopting the technical scheme, the following technical effects can be at least achieved:

the utility model provides a crimping formula IGBT submodule group and crimping formula IGBT module, this crimping formula IGBT submodule group including the interval set up in a plurality of IGBT chips and a plurality of FRD chip of plate electrode top down. The crimping type IGBT module comprises a plurality of crimping type IGBT sub-modules; a tube shell including a tube cap and a tube base; the tube seat is of a hollow structure and comprises a plurality of fifth openings and a third skirt edge structure positioned around the fifth openings; the fifth opening is used for exposing the lower electrode plate of each crimping type IGBT sub-module; the third skirt structure is in contact with the first skirt structure of the lower electrode plate to realize sealed packaging. The crimping type IGBT sub-module can randomly select the number and the layout mode of chips, is simple in structure, and reduces the process difficulty of the IGBT module. The crimping type IGBT module adopts the tube seat with a hollow structure, the copper platform structure corresponding to the lower electrode plate of the IGBT sub-module on the tube seat is eliminated, the number of stacked layers is reduced, the thermal resistance on a heat flow path is reduced, the module sealing can be realized by adopting a cold pressure welding or argon arc welding mode under the structure, and the production flow is simplified.

Drawings

The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:

fig. 1 is a schematic structural diagram of a crimping type IGBT sub-module according to an exemplary embodiment of the present disclosure;

fig. 2 is a schematic cross-sectional structure diagram of a crimp type IGBT sub-module according to an exemplary embodiment of the present disclosure;

fig. 3 is an exploded view of a crimp IGBT sub-module shown in an exemplary embodiment of the present disclosure;

fig. 4 is an exploded view of a crimp IGBT module shown in an exemplary embodiment of the present disclosure;

fig. 5 is a schematic cross-sectional structure diagram of a crimp type IGBT module according to an exemplary embodiment of the present disclosure;

in the drawings, wherein like parts are designated with like reference numerals, the drawings are not necessarily to scale;

100-crimping type IGBT sub-module; 101-a lower electrode plate; 1011-a first skirt structure; 102-IGBT chip; 1021-the gate of the IGBT chip; 1022-the emitter of the IGBT chip; 103-FRD chip; 104-an insulating frame; 1041-a first opening; 1042 — a second opening; 1043-third opening; 105-an upper electrode plate; 106-gate connection; 200-a PCB circuit board; 201-a fourth opening; 300-a tube cover; 301-a second skirt construction; 400-tube seat; 401-fifth opening; 402-a third skirt construction; 403-a fourth skirt construction; 404-insulating ring.

Detailed Description

Embodiments of the present disclosure will be described in detail with reference to the accompanying drawings and examples, so that how to apply technical means to solve technical problems and achieve the corresponding technical effects can be fully understood and implemented. The embodiments and the features of the embodiments of the present disclosure can be combined with each other without conflict, and the formed technical solutions are all within the protection scope of the present disclosure.

It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

In order to provide a thorough understanding of the present disclosure, a detailed structure will be set forth in the following description in order to explain the technical solutions proposed by the present disclosure. The following detailed description of the preferred embodiments of the present disclosure, however, the present disclosure may have other embodiments in addition to these detailed descriptions.

Example one

As shown in fig. 1, 2 and 3, the present embodiment provides a press-contact IGBT sub-module 100, which includes a lower electrode plate 101, an IGBT chip 102, an FRD chip 103, an insulating outer frame 104, an upper electrode plate 105 and a gate connector 106.

The first skirt structure 1011 is disposed on the periphery of the lower electrode plate 101 (i.e. on the side wall of the lower electrode plate 101), and the material of the lower electrode plate 101 may have a high Thermal conductivity and a Coefficient of Thermal Expansion (CTE) matching with those of the IGBT chip 102 and the FRD chip 103, including (but not limited to) copper-molybdenum alloy or molybdenum.

A plurality of IGBT chips 102 and a plurality of FRD chips 103 are disposed above the lower electrode plate 101 at intervals. The number of IGBT chips 102 is greater than or equal to 2, and the number of FRD chips 103 is set as required and based on the number of chips of the IGBT. The number and layout of the IGBT chips 102 and the FRD chips 103 may be arbitrarily selected, and the number and layout of the chips are not limited to the structures shown in fig. 1 to 3, and may be arbitrarily selected according to the required voltage and current levels. The layout structure is simple, and the process difficulty of the IGBT module is reduced.

Illustratively, the conventional FRD chips 103 are twice as current as the IGBT chips 102, so the ratio of the number of corresponding FRD chips 103 to the number of IGBT chips 102 is 1: 2, 2 FRD chips 103 and 4 IGBT chips 102 as shown in fig. 1 to 3.

The IGBT chip 102 and the FRD chip 103 are both provided with an upper surface and a lower surface, the grid electrode and the emitting electrode of the IGBT chip 102 are positioned on the upper surface, and the collector electrode is positioned on the lower surface; the anode of the FRD chip 103 is located above and the cathode is located below.

The lower electrode plate 101 is in contact with a collector of the IGBT chip 102 and a cathode of the FRD chip 103, and serves to draw out the collector of the IGBT chip 102 and the cathode of the FRD chip 103.

The contact mode of the lower electrode plate 101 with the collector of the IGBT chip 102 and the cathode of the FRD chip 103 includes pressure contact, sintering, or welding.

An insulating frame 104 is disposed over the IGBT chip 102 and the FRD chip 103. The insulating housing 104 includes a first opening 1041, a second opening 1042, and a third opening 1043 for exposing the gate 1021 of the IGBT chip 102, the emitter 1022, and the anode of the FRD chip 103, respectively. That is, the first opening 1041, the second opening 1042 and the third opening 1043 are openings penetrating through the four insulating frames 104, the bottom of the first opening 1041 contacts the gate 1021 of the IGBT chip 102, the bottom of the second opening 1042 contacts the emitter 1022 of the IGBT chip 102, and the bottom of the third opening 1043 contacts the anode of the FRD chip 103. The insulating housing 104 can position the gate connecting member 106 and the upper electrode plate 105 through the first opening 1041, the second opening 1042 and the third opening 1043.

The upper electrode plate 105 is disposed at the bottom of the second opening 1042 and the third opening 1043. The material of the upper electrode plate 105 may adopt a material with high Thermal conductivity and Coefficient of Thermal Expansion (CTE) matching with that of the IGBT chip 102 and the FRD chip 103, including (but not limited to) copper-molybdenum alloy or molybdenum.

The upper electrode plate 105 is in contact with the emitter 1022 of the IGBT chip 102 and the anode of the FRD chip 103, and is used for leading out the emitter 1022 of the IGBT chip 102 and the anode of the FRD chip 103.

The contact manner of the upper electrode plate 105 with the emitter 1022 of the IGBT chip 102 and the anode of the FRD chip 103 includes pressure contact, sintering, or welding.

The gate connecting member 106 is disposed in the first opening 1041, and the gate connecting member 106 (at the bottom thereof) contacts the gate 1021 of the IGBT chip 102, so as to lead out the gate 1021 of the IGBT chip 102. The gate connection 106 may be, but is not limited to, a pogo pin.

The present embodiment provides a crimping type IGBT sub-module 100, the crimping type IGBT sub-module 100 includes a lower electrode plate 101, wherein a first skirt structure 1011 is disposed on a periphery of the lower electrode plate 101; a plurality of IGBT chips 102 and a plurality of FRD chips 103 disposed above the lower electrode plate 101 at intervals. The number and the layout mode of the chips can be selected at will, the structure is simple, and the process difficulty of the IGBT module is reduced.

Example two

As shown in fig. 4 and fig. 5, the present embodiment provides a press-fit IGBT module based on the first embodiment, which includes several press-fit IGBT sub-modules 100, a PCB 200, and a package (not shown).

The PCB circuit board 200 is located above the press-fit IGBT sub-module 100. The PCB 200 is in contact with the gate connectors 106 of the press-fit IGBT sub-modules 100, so as to collect the gates of all the press-fit IGBT sub-modules 100 onto the total gate on the PCB 200. The PCB 200 includes a plurality of fourth holes 201 for exposing the upper electrode plates 105 of the respective press-fit IGBT sub-modules 100. That is, the PCB 200 is mainly used for leading out the gate of the press-connected IGBT sub-module 100.

And the tube shell comprises a tube cover 300 and a tube seat 400, wherein the tube cover 300 is positioned above the PCB 200, and the tube seat 400 is positioned below the crimping type IGBT sub-module 100.

The tube cover 300 includes a boss structure (not labeled in the figure) and a second skirt structure 301, the tube cover 300 contacts with the upper electrode plate 105 of the press-fit IGBT sub-module 100 through the boss structure, and the second skirt structure 301 is disposed at the periphery of the tube cover 300. That is, the boss structure is matched with the second opening 1042 and the third opening 1043 of the insulation frame 104 of the press-fit type IGBT sub-module 100, so that the boss structure can be inserted into the second opening 1042 and the third opening 1043 of the insulation frame 104 to contact the upper electrode plate 105. It is understood that the PCB circuit board 200 is disposed in the gap of the boss structure of the cap 300.

The cap 300 may be made of a conductive material such as copper, and the cap 300 may have a square, circular or other shape. The second skirt structure 301 may be made of a conductive material such as molybdenum, copper-molybdenum alloy, etc.

The socket 400 is a hollow structure, and the socket 400 includes a plurality of fifth openings 401, a third skirt structure 402 located around the fifth openings 401, a fourth skirt structure 403 matched with the second skirt structure 301, an insulating ring 404, and a gate terminal.

The shape of the socket 400 is the same as the shape of the cap 300, and the third skirt structure 402 and the fourth skirt structure 403 may be made of molybdenum, copper-molybdenum alloy, or other conductive materials.

The fifth opening 401 is used to expose the lower electrode plate 101 of each press-fit IGBT sub-module 100, that is, in this embodiment, the socket 400 no longer leads out the lower electrode plate 101 in the press-fit IGBT sub-module 100 through a conventional copper platform structure, but contacts (electrically connects) the base and the lower electrode plate 101 through the third skirt structure 402 and the first skirt structure 1011 of the lower electrode plate 101. Compared with the traditional crimping type IGBT module, the heat flow path of the embodiment is provided with no tube seat 400 copper platform, the number of stacked layers is reduced, and the thermal resistance is obviously reduced.

The third skirt structure 402 includes a portion located at the gap between the lower electrode plates 101 of the crimp IGBT sub-module 100 and a portion located around the stem 400.

The contact of the third skirt structure 402 with the first skirt structure 1011 of the lower electrode plate 101 may comprise cold welding or arc welding.

The fourth skirt structure 403 contacts the second skirt structure 301 to provide a hermetic package of the cap 300 and the socket 400. The contact of the fourth skirt structure 403 with the second skirt structure 301 may comprise cold or arc welding.

In the embodiment, the cold welding process can be reserved on the premise of not sacrificing the sealing performance of the module, and the production flow is simplified.

The fourth skirt structure 403 of the socket 400 is separated from the portion of the third skirt structure 402 around the socket 400 by an insulating ring 404.

The gate terminal is in contact with the PCB circuit board 200 for electrical connection with the gate of the IGBT chip 102 of each press-fit IGBT sub-module 100 through the PCB circuit board 200.

The contact of the gate terminal with the PCB 200 includes screws, soldering, laser welding or bonding.

The present embodiment provides a crimping IGBT module, which includes a plurality of crimping IGBT sub-modules 100; a cartridge including a cap 300 and a socket 400; the tube cover 300 is in contact with the upper electrode plate 105 of the crimping type IGBT sub-module 100 through a boss structure, and a second skirt structure 301 is arranged on the periphery of the tube cover 300; the tube seat 400 is a hollow structure, and the tube seat 400 comprises a plurality of fifth openings 401, a third skirt structure 402 positioned around the fifth openings 401, and a fourth skirt structure 403 matched with the second skirt structure 301; the fifth opening 401 is used for exposing the lower electrode plate 101 of each crimping type IGBT sub-module 100; the third skirt structure 402 contacts the first skirt structure 1011 of the lower electrode plate 101, and the fourth skirt structure 403 contacts the second skirt structure 301, so as to realize a sealed package. The crimping type IGBT module adopts the tube seat with a hollow structure, the copper platform structure corresponding to the lower electrode plate of the IGBT sub-module on the tube seat is eliminated, the number of stacked layers is reduced, the thermal resistance on a heat flow path is reduced, the module sealing can be realized by adopting a cold pressure welding or argon arc welding mode under the structure, and the production flow is simplified.

The above is merely a preferred embodiment of the present disclosure and is not intended to limit the present disclosure, which may be variously modified and varied by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure. Although the embodiments disclosed in the present disclosure are described above, the embodiments are merely used for understanding the present disclosure, and are not intended to limit the present disclosure. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure, and that the scope of the disclosure is to be limited only by the appended claims.

Claims

1. The utility model provides a crimping formula IGBT submodule group which characterized in that includes:

2. The crimped IGBT sub-module according to claim 1, wherein the lower electrode plate is in contact with the collector of the IGBT chip and the cathode of the FRD chip by pressure contact, sintering or welding.

3. The crimped IGBT sub-module according to claim 1, wherein the upper electrode plate is in contact with the emitter of the IGBT chip and the anode of the FRD chip by pressure contact, sintering or welding.

4. The crimped IGBT sub-module according to claim 1, wherein the gate connection is a pogo pin.

5. The crimped IGBT sub-module according to claim 1, wherein the material of the upper electrode plate and the lower electrode plate comprises a copper molybdenum alloy or molybdenum.

6. A crimp-style IGBT module, comprising:

a plurality of crimping type IGBT sub-modules according to any one of claims 1 to 5;

7. The crimped IGBT module according to claim 6, wherein the third skirt structure is in contact with the first skirt structure of the lower electrode plate by cold pressure welding or arc welding.

8. The crimped IGBT module of claim 6, wherein the fourth skirt structure and the second skirt structure are in contact including cold pressure welding or arc welding.

9. The compression IGBT module of claim 6, wherein the header further comprises a gate terminal, wherein the gate terminal is in contact with the PCB circuit board for electrical connection with the gate of the IGBT chip of each compression IGBT sub-module through the PCB circuit board.

10. The crimped IGBT module according to claim 9, wherein the means of contacting the gate terminal to the PCB circuit board comprises screws, soldering, laser welding, or bonding.