CN113161337A - Intelligent power module - Google Patents
Intelligent power module Download PDFInfo
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- CN113161337A CN113161337A CN202110334974.3A CN202110334974A CN113161337A CN 113161337 A CN113161337 A CN 113161337A CN 202110334974 A CN202110334974 A CN 202110334974A CN 113161337 A CN113161337 A CN 113161337A
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- driving chip
- insulating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
Abstract
The invention relates to an intelligent power module.A heat insulation layer is arranged between a circuit wiring layer where a driving chip is positioned and a heat dissipation substrate so as to block heat of a power device transmitted by the heat dissipation substrate, so that the temperature of the driving chip is effectively reduced, and the problem of unstable work of a semiconductor element of the driving chip caused by overhigh temperature is well solved. And furthermore, a metal heat transfer layer is arranged between the insulating layers for mounting the power device, and the heat conductivity coefficient of the metal heat transfer layer is higher than that of the insulating layer, so that the heat generated in the working process of the power device is quickly transferred to the insulating layer through the metal heat dissipation layer and finally transferred to the metal heat dissipation substrate. Therefore, the heat conduction of the power device is improved, and the heat emission of the driving chip is reduced, so that the working temperatures of the power device and the driving chip are controlled under reasonable temperature parameters respectively, and the reliability and the stability of the IPM work are improved.
Description
Technical Field
The invention relates to an intelligent power module, and belongs to the technical field of power semiconductor devices.
Background
An intelligent Power module, i.e., ipm (intelligent Power module), is a Power driving product combining Power electronics and integrated circuit technology. The intelligent power module integrates a power switch device and a high-voltage driving circuit and is internally provided with fault detection circuits such as overvoltage, overcurrent and overheat. The conventional IPM module is characterized in that a driving circuit and a power switch device are arranged on the same substrate, when the IPM module works, high temperature generated by the power switch device is transmitted to a driving chip in the driving circuit through the substrate, and with the increase of the temperature of the driving chip, conductive electrons and holes are participated in the driving chip, so that the driving chip is excited to be increased and obviously increased, the conductivity is increased, the resistance is reduced, the parameter deviation and the control precision of an IC are influenced, and the service life of the driving chip is shortened due to the high temperature. Thereby affecting the operating life and operating reliability of the IPM module.
Disclosure of Invention
The technical problem to be solved by the invention is to solve the problem that the control precision and the service life of a driving chip of a driving circuit are influenced by overhigh working temperature of the driving chip of the driving circuit because a power switch device and the driving circuit are arranged on the same substrate in the conventional IPM module.
Specifically, the present invention discloses an intelligent power module, comprising:
a heat-dissipating substrate made of a metal material;
the insulating layer and the heat insulating layer are respectively arranged on the surface of the heat dissipation substrate;
the metal heat transfer layer is arranged on the surface of the insulating layer;
a circuit wiring layer disposed on the thermal insulation layer and the metal heat transfer layer, the circuit wiring layer being provided with a plurality of pads;
the electronic element is configured on the bonding pad of the circuit wiring layer and comprises a power device and a driving chip, wherein the heat generation of the power device is larger than that of the driving chip, the power device is arranged on the circuit wiring layer corresponding to the metal heat transfer layer, and the driving chip is arranged on the circuit wiring layer corresponding to the heat insulation layer;
a plurality of pins disposed on at least one side of the heat-dissipating substrate;
and the sealing layer at least wraps one surface of the heat dissipation substrate provided with the circuit element, and one end of the pin is exposed out of the sealing layer.
Optionally, the thermal conductivity of the thermal insulating layer is lower than the thermal conductivity of the insulating layer.
Optionally, the heat insulation layer includes a middle heat insulation body and upper and lower metal layers, the heat insulation body is an FR-4 plate, and the metal layer is a copper foil.
Optionally, the stacked thickness of the insulating layer and the metal heat transfer layer is equal to the thickness of the isolation layer.
Optionally, the area of the insulating layer is not smaller than the area of the metal heat transfer layer.
Optionally, the thermal insulation layer is provided with a through slot penetrating through the thickness thereof, and the insulation layer and the metal heat transfer layer are installed in the through slot.
Optionally, the IPM module further includes a plurality of bonding wires connected between the plurality of electronic components, the circuit wiring layer, and the plurality of pins.
Alternatively, the insulating layer is made of a resin material filled with a filler of alumina and aluminum carbide.
Optionally, the filler is angular, spherical or a mixture of angular and spherical.
Optionally, the power devices are disposed close to each other, and the driving chip is disposed far from the power devices.
The intelligent power module comprises a heat dissipation substrate, an insulating layer, a heat insulation layer, a metal heat transfer layer, a circuit wiring layer, an electronic element, a plurality of pins and a sealing layer. The heat insulation layer is arranged between the circuit wiring layer where the driving chip is located and the heat dissipation substrate, so that heat of a power device transmitted by the heat dissipation substrate is blocked, the temperature of the driving chip is effectively reduced, the working temperature of the driving chip can be maintained near the room temperature, and the problem that a semiconductor element of the driving chip is unstable due to overhigh temperature is solved well. And furthermore, a metal heat transfer layer is arranged between the insulating layers for mounting the power device, and the heat conductivity coefficient of the metal heat transfer layer is higher than that of the insulating layer, so that the heat generated in the working process of the power device is quickly transferred to the insulating layer through the metal heat dissipation layer and finally transferred to the metal heat dissipation substrate. Therefore, the heat conduction of the power device is improved, and the heat emission of the driving chip is reduced, so that the working temperatures of the power device and the driving chip are controlled under reasonable temperature parameters respectively, and the reliability and the stability of the IPM work are improved.
Drawings
FIG. 1 is a top view of an IPM module in accordance with an embodiment of the invention;
FIG. 2 is a sectional view taken in the direction X1-X1 in FIG. 1;
FIG. 3 is a sectional view taken in the direction X2-X2 in FIG. 1;
FIG. 4 is a schematic view of the structure of the insulating layer of FIG. 2;
FIG. 5 is a top view of an IPM module in accordance with an embodiment of the invention with the sealing layer removed;
FIG. 6 is a circuit diagram of a driving chip of an IPM module according to an embodiment of the present invention;
fig. 7 is a simplified schematic circuit diagram of an IPM module according to an embodiment of the present invention.
Reference numerals:
the flywheel diode 103, the IGBT104, the sealing layer 105, the driver chip 106, the bonding wire 107, the circuit wiring layer 108, the insulating layer 109, the heat dissipation substrate 110, the metal heat transfer layer 112, the pad 114, the thermal insulation layer 115, the lead 116, the thermal insulation body 1151, and the metal layer 1152.
Detailed Description
It is to be noted that the embodiments and features of the embodiments may be combined with each other without conflict in structure or function. The present invention will be described in detail below with reference to examples.
As shown in fig. 1 to 5, the IPM module includes a heat dissipation substrate 110, an insulating layer 109, a thermal insulating layer 115, a metal heat transfer layer 112, a circuit wiring layer 108, an electronic component, a plurality of pins 116, and a sealing layer 105.
The heat dissipation substrate 110 is made of a metal material, and includes an upper mounting surface and a lower heat dissipation surface, and may be a rectangular plate made of aluminum such as 1100, 5052, and the like. The insulating layer 109 is formed to cover at least one surface of the heat dissipation substrate 110, and is made of a resin material such as epoxy resin, and a filler such as alumina and aluminum carbide is filled inside the resin material to improve thermal conductivity. In order to increase the thermal conductivity, the shape of these fillers may be angular, and in order to avoid the risk of the fillers damaging the contact surfaces of the electronic components arranged on the surface thereof, the fillers may be spherical or a mixture of angular and spherical. The circuit wiring layer 108 may be formed by etching copper foil or by printing a paste-like conductive medium, which may be a conductive material such as graphene, solder paste, or silver paste. A plurality of pads 114 are provided on the circuit wiring layer 108 for mounting electronic components and pins 116. The pins 116 are electrically fixed to the pads 114 on one edge of the heat dissipation substrate 110, and have a function of inputting and outputting signals to and from an external circuit connected to the IPM module, and in this embodiment, as shown in fig. 1, a plurality of pins 116 are led out from one side of the heat dissipation substrate 110, but may be led out from two opposite sides of the heat dissipation substrate 110 in other implementations. The leads 116 are generally made of copper or other metal, a nickel-tin alloy layer is formed on the copper surface by chemical plating and electroplating, the thickness of the alloy layer is generally 5 μm, and the copper can be protected from corrosion and oxidation by the plating layer and the solderability can be improved. The sealing layer 105 may be formed of resin, and may be molded using thermosetting resin by a transfer molding method or thermoplastic resin by an injection molding method. The sealing layer 105 has two packaging structures, one is that the sealing layer 105 covers the upper and lower surfaces of the heat dissipation substrate 110 and covers the electronic elements arranged on the heat dissipation substrate 110, and also covers the pins 116 arranged at one end of the heat dissipation substrate 110, which is a full-covering mode of the sealing layer 105; in another packaging method, the sealing layer 105 covers the upper surface of the heat dissipating substrate 110, i.e. covers the heat dissipating substrate 110, the electronic component and the leads 116 disposed at one end of the heat dissipating substrate 110, and the lower surface of the heat dissipating substrate 110, i.e. the heat dissipating surface, is exposed out of the sealing layer 105, thereby forming a half-covering method of the sealing layer 105. Fig. 2 and 3 show a half-coating manner of the sealing layer 105.
The electronic components are disposed on the bonding pads 114 of the circuit wiring layer 108, and the electronic components include a power device and a driving chip 106, wherein the power device includes a switching Transistor such as an IGBT104(Insulated Gate Bipolar Transistor) or a MOS Transistor (metal oxide semiconductor), and the like, and also includes a freewheeling diode 103, which consumes a large amount of power and generates a large amount of heat, while the driving chip 106 consumes a much smaller amount of power and generates a very low amount of heat during operation, and the driving chip 106 includes a plurality of micro semiconductor devices therein, and thus the temperature of the driving chip 106 is much lower than that of the power device. In the working process of the power device, a large amount of heat generated by the power device is transmitted to the driving chip 106 through the heat dissipation substrate 110, so that the temperature of the power device is raised suddenly, thereby affecting the working stability of the driving chip 106. To solve this problem, the insulating layer 109 is provided only in a partial region of the heat dissipating substrate 110 where the power device is mounted, and the insulating layer 109 is not provided in a partial region of the heat dissipating substrate 110 where the driving chip 106 is mounted. Namely, the insulating layer 109 is disposed between the pad 114 of the circuit wiring layer 108 where the power device is located and the heat dissipation substrate 110, and the heat insulation layer 115 is disposed between the pad 114 of the circuit wiring layer 108 where the driving chip 106 is located and the heat dissipation substrate 110, so as to replace the insulating layer 109 disposed between the driving chip 106 and the heat dissipation substrate 110 in the prior art, and since the thermal conductivity coefficient of the insulating layer 109 is much higher than that of the heat insulation layer 115, the heat from the power device is better prevented from being transferred by the heat dissipation substrate 110, so that the temperature of the driving chip 106 is effectively reduced, and the operating temperature of the driving chip 106 can be maintained near room temperature. Therefore, the problem that the semiconductor element of the driving chip 106 is unstable due to overhigh temperature is well solved. And further, a metal heat transfer layer 112 is arranged between the insulating layers 109 for mounting the power device, and the heat conductivity coefficient of the metal heat transfer layer 112 is higher than that of the insulating layer 109, so that heat generated in the working process of the power device is rapidly transferred to the insulating layer 109 through the metal heat dissipation layer and finally transferred to the metal heat dissipation substrate 110. Therefore, the heat conduction of the power device is improved, and the heat generation of the driving chip 106 is reduced, so that the working temperatures of the power device and the driving chip 106 are controlled under reasonable temperature parameters respectively, and the reliability and the stability of the IPM work are improved. Moreover, the heat transfer generated by the functional device is enhanced and the heat generated by the driving chip 106 is reduced, so that the distribution density of the electronic components of the whole IPM module can be improved, and the miniaturization of the IPM module is facilitated. Further, in the relevant specification of the IPM module for the driver chip 106, each parameter is obtained by testing at room temperature of 25 ℃, so that the closer the operating temperature of the driver chip 106 is to room temperature, the more beneficial an engineer designs the relevant circuit of the IPM module with reference to the parameter of the specification, and the design requirement of the engineer is reduced.
In some embodiments of the present invention, as shown in fig. 4, insulation layer 115 includes an intermediate insulation body 1151 and metal layers 1152 attached to each of upper and lower surfaces of insulation body 1151, wherein insulation body 1151 has a lower thermal conductivity than insulation layer 109. The thicker portion of the intermediate portion is an insulating body 1151 having a thermal conductivity lower than that of the insulating layer 109 and thus having a poor heat transfer capability with respect to the insulating layer 109, and the metal layers 1152 disposed on both upper and lower surfaces of the insulating body 1151 are relatively thin, such as copper foil layers, on the surfaces of which pads may be disposed to fix the upper and lower surfaces of the insulating body 1151 between the pads 114 of the circuit wiring layer 108 and the heat-dissipating substrate 110 by soldering. Moreover, the heat insulation body 1151 has a low thermal conductivity, so that heat generated on the heat dissipation substrate 110 is not easily blocked by the heat insulation body 1151 and is not easily transmitted to the driving chip 106, thereby effectively reducing the working temperature of the driving chip 106. Specifically, the heat insulation body 1151 may be a glass cloth substrate made of FR-4 plate material with a thermal conductivity of only 0.2W/m.k, and the existing insulation layer 109 has a thermal conductivity of 2.0W/m.k, which is much smaller than that of the insulation layer 109, so that the heat conductivity of the insulation layer 109 is weak, and the insulation layer can perform a better thermal insulation function.
In some embodiments of the present invention, the metal heat transfer layer 112 is a copper heat sink, and copper has excellent thermal conductivity, so that the ability of conducting heat generated by the power device can be improved. Further, the area of the insulating layer 109 is not smaller than the area of the metal heat transfer layer 112. Thereby ensuring sufficient insulation between the metal heat transfer layer 112 and the heat dissipation substrate 110 through the insulating layer 109.
In some embodiments of the invention, the thermal insulation layer 115 is provided with a through-slot through its thickness, the insulation layer 109 and the metal heat transfer layer 112 being mounted within the through-slot. As shown in fig. 2 and 3, the circuit wiring layer 108 corresponding to the thermal insulation layer 115 may be provided with other passive components such as resistors, capacitors, and other electronic components besides the active components with small heat generation quantity, such as the driving chip 106, so that the area occupied by the thermal insulation layer 115 is relatively large. For convenience of processing and assembly, a whole heat insulating layer 115 is prepared, and then a plurality of through grooves are formed in the heat insulating layer 115 to penetrate through the thickness thereof, and the shape of each through groove is adapted to the shape of the insulating layer 109 and the metal heat transfer layer 112. For example, the IPM module at least includes 6 switching transistors of upper and lower arms, such as IGBTs 104, and corresponding freewheeling diodes 103, so that the thermal insulation layer 115 has at least 6 through slots, and the shape and size of each through slot are respectively adapted to the shapes of the insulation layer 109 and the metal heat transfer layer 112. During assembly, the heat insulation layer 115 is firstly installed on the heat dissipation substrate 110, then the plurality of insulation layers 109 and the metal heat transfer layers 112 are respectively installed in the corresponding through grooves, the total thickness of the insulation layers 109 and the metal heat transfer layers 112 is equal to the thickness of the heat insulation layer 115, and thus the surface of the metal heat transfer layers 112 is flush with the surface of the heat insulation layer 115, so that the circuit wiring layer 108 is convenient to lay, and the surface of the circuit wiring layer 108 is flat, so that the electronic element is convenient to install.
In some embodiments of the present invention, as shown in fig. 2, 3 and 5, a plurality of bonding wires 107 are further included, and the bonding wires 107 are connected between the plurality of electronic components, the circuit wiring layer 108 and the plurality of pins 116. The electronic components are the IGBT104304, the driver chip 106, the freewheeling diode 103, and others such as resistors, capacitors, etc. mentioned in the above embodiments. The bond wires 107 are typically gold wires, copper wires, hybrid gold-copper wires, 38um, or thin aluminum wires below 38 um. Specifically, the bonding wires 107 may connect between the electronic component and the electronic component, may connect between the electronic component and the wiring layer, may connect between the electronic component and the pins 116, and the like, thereby forming a circuit connection of the entire IPM module.
In some embodiments of the present invention, as shown in fig. 4 to fig. 6, a circuit composed of the circuit wiring layer 108 and the electronic component disposed on the circuit wiring layer 108 includes a driving circuit and an inverter circuit, wherein the inverter circuit includes 6 switching tubes of upper and lower bridge arms, the driving circuit includes a driving chip 106, and the driving chip 106 is provided with at least one of an over-temperature protection switching circuit, an under-voltage protection circuit, an over-current protection circuit, and an over-voltage protection circuit. Wherein the driving circuit mainly comprises a driving chip 106, the inverter circuit mainly comprises 3 sets of inverter units of upper and lower bridge arms, each inverter unit comprises two three-level transistors, i.e. an IGBT104 in fig. 7, or an MOS transistor, wherein a triode transistor 202 and a triode transistor 205 are combined into one set, a triode transistor 203 and a triode transistor 206 are combined into one set, a triode transistor 204 and a triode transistor 207 are combined into one set, each set of two triode transistors is divided into an upper bridge arm and a lower bridge arm, wherein the triode transistor 202 is an upper bridge arm, the triode transistor 205 is a lower bridge arm, the triode transistor 203 is an upper bridge arm, the triode transistor 206 is a lower bridge arm, the triode transistor 204 is an upper bridge arm, the triode transistor 207 is a lower bridge arm, a drain of the triode transistor 202 of the upper bridge arm is connected with a high voltage input end P of the module, a source of the triode transistor 202 of the upper bridge arm is connected with a drain of the triode transistor 205 of the lower bridge arm, the source of the triode transistor 205 of the lower bridge arm is connected with the end of a module outer pin 116303UN, the gates of the two triode transistors are connected with the driving chip 106, the source of the triode transistor 203 of the upper bridge arm is connected with the drain of the triode transistor 205 of the lower bridge arm, the source of the triode transistor 206 of the lower bridge arm is connected with the end of a module outer pin 116303VN, the gates of the two triode transistors are connected with the driving chip 106, the source of the triode transistor 204 of the upper bridge arm is connected with the drain of the triode transistor 207 of the lower bridge arm, the source of the triode transistor 207 of the lower bridge arm is connected with the end of a module outer pin 116303WN, and the gates of the two triode transistors are connected with the control chip. Fig. 6 is a circuit block diagram inside the driving chip 106, which includes, in addition to the driving circuits for driving the upper and lower bridge arm switching tubes respectively, that is, the high-voltage side driving circuit for driving the upper bridge arm switching tube and the low-voltage side driving circuit for driving the lower bridge arm switching tube, an over-temperature protection switch, an under-voltage protection circuit, an over-current protection circuit, and an over-voltage protection circuit, the control accuracy of these circuits is high, so as to improve the control accuracy of the driving chip 106 and avoid the influence of an excessive temperature on the parameters of the driving chip 106.
In some embodiments of the present invention, as shown in fig. 5, six switching tubes of the inverter circuit, i.e., IGBTs 104, are divided into two groups of upper and lower bridge arms, wherein three switching tubes of the upper bridge arm are arranged above the circuit wiring layer 108 in parallel, three switching tubes of the lower bridge arm are arranged below the circuit wiring layer 108 in parallel, the switching tubes are arranged close to each other, the driving chip 106 as the driving circuit is arranged on the other side of the circuit wiring layer 108, e.g., on the right side in fig. 5, and is further away from the six switching tubes, the driving chip 106 and the six switching tubes are connected by routing, because the inverter circuit operates in a strong current region (about 300V dc power supply), and a part of the driving chip 106 operates in a weak current region, and its input control signal is a weak current signal, by arranging the driving chip 106 and the switching tubes far away, it is better to avoid interference caused by switching between high voltage in the strong current region and high speed switching tubes to the weak current circuit inside the driving chip 106, which causes interference The operation of the IPM module is unstable, so that the stability and reliability of the operation of the whole IPM module are prompted.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A smart power module comprising:
a heat-dissipating substrate made of a metal material;
the insulating layer and the heat insulating layer are respectively arranged on the surface of the heat dissipation substrate;
the metal heat transfer layer is arranged on the surface of the insulating layer;
a circuit wiring layer disposed on the thermal insulation layer and the metal heat transfer layer, the circuit wiring layer being provided with a plurality of pads;
the electronic element is configured on the bonding pad of the circuit wiring layer and comprises a power device and a driving chip, wherein the heat generation of the power device is larger than that of the driving chip, the power device is arranged on the circuit wiring layer corresponding to the metal heat transfer layer, and the driving chip is arranged on the circuit wiring layer corresponding to the heat insulation layer;
a plurality of pins disposed on at least one side of the heat-dissipating substrate;
and the sealing layer at least wraps one surface of the heat dissipation substrate provided with the circuit element, and one end of the pin is exposed out of the sealing layer.
2. The smart power module of claim 1 wherein the thermal conductivity of the thermal insulating layer is lower than the thermal conductivity of the insulating layer.
3. The smart power module of claim 2, wherein the thermal insulation layer comprises an intermediate thermal insulation body and upper and lower metal layers, the thermal insulation body is an FR-4 board, and the metal layer is a copper foil.
4. The smart power module of claim 1, wherein a thickness of a stack of the insulating layer and the metal heat transfer layer is equal to a thickness of the isolation layer.
5. The smart power module of claim 4, wherein an area of the insulating layer is not less than an area of the metal heat transfer layer.
6. The smart power module of claim 4 wherein the thermal insulating layer is provided with through slots through its thickness, the insulating layer and the metal heat transfer layer being mounted within the through slots.
7. The smart power module of claim 1 further comprising a plurality of bond wires connected between the plurality of electronic components, the circuit routing layer, and the plurality of pins.
8. The smart power module of claim 1 wherein the insulating layer is made of a resin material filled with a filler of alumina and aluminum carbide.
9. The smart power module of claim 8 wherein the filler is angular, spherical, or a mixture of angular and spherical.
10. The smart power module of claim 1, wherein the power devices are disposed proximate to each other and the driver chip is disposed distal from the power devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110334974.3A CN113161337A (en) | 2021-03-29 | 2021-03-29 | Intelligent power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110334974.3A CN113161337A (en) | 2021-03-29 | 2021-03-29 | Intelligent power module |
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| CN113161337A true CN113161337A (en) | 2021-07-23 |
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| CN202110334974.3A Pending CN113161337A (en) | 2021-03-29 | 2021-03-29 | Intelligent power module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114334873A (en) * | 2022-03-15 | 2022-04-12 | 广东汇芯半导体有限公司 | Water-cooling intelligent power module and refrigerating device using same |
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2021
- 2021-03-29 CN CN202110334974.3A patent/CN113161337A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114334873A (en) * | 2022-03-15 | 2022-04-12 | 广东汇芯半导体有限公司 | Water-cooling intelligent power module and refrigerating device using same |
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