CN214848619U

CN214848619U - Intelligent power module

Info

Publication number: CN214848619U
Application number: CN202120541871.XU
Authority: CN
Inventors: 谢荣才; 王敏; 左安超
Original assignee: Guangdong Huixin Semiconductor Co Ltd
Current assignee: Guangdong Huixin Semiconductor Co Ltd
Priority date: 2021-03-16
Filing date: 2021-03-16
Publication date: 2021-11-23
Anticipated expiration: 2031-03-16

Abstract

The utility model relates to an intelligent power module, through the range upon range of setting of the first electronic component that will give out heat greatly and the little second electronic component that gives out heat, and set up insulating heat shield between the two, with this effectual area occupied that has reduced electronic component, theoretically compare with prior art, its area occupied can reduce half at most, therefore can effectual whole heat dissipation base plate's that reduces volume realize its cost reduction, and reduce the volume of sealing layer, and then make whole IPM module volume effectively reduce, thereby also more made things convenient for the application of IPM module when reducing whole IPM module material cost. Or, in the case of the same size as the existing IPM module, the area of the electronic component, particularly the first electronic component with a large heat generation amount, may be increased to enhance the overcurrent capability thereof, so that the operating power of the IPM module is higher, thereby increasing the power density of the IPM module.

Description

Intelligent power module

Technical Field

The utility model relates to an intelligent power module belongs to power semiconductor device technical field.

Background

An intelligent Power module, i.e., ipm (intelligent Power module), is a Power driving product combining Power electronics and integrated circuit technology. The intelligent power module integrates a power switch device and a high-voltage driving circuit and is internally provided with fault detection circuits such as overvoltage, overcurrent and overheat. The intelligent power module receives a control signal of the MCU to drive a subsequent circuit to work on one hand, and sends a state detection signal of the system back to the MCU on the other hand. In the prior internal structure of the IPM, electronic components such as power devices and driving chips are fixed on a heat dissipation substrate in a single layer, and these planar structures need a heat dissipation substrate and a wiring area with large areas besides the chips, and occupy large areas, which is not favorable for the miniaturization of the IPM module.

SUMMERY OF THE UTILITY MODEL

The utility model discloses the technical problem that need solve is that it is big to solve current IPM module electronic component and adopt planar mounting means to lead to its area occupied, is unfavorable for the miniaturized problem of IPM module.

Specifically, the utility model discloses an intelligent power module, which comprises a heat dissipation substrate, wherein the heat dissipation substrate comprises a mounting surface for mounting an electronic element and a heat dissipation surface for dissipating heat;

the electronic device comprises a plurality of electronic elements, a first electronic element and a second electronic element, wherein the electronic elements comprise the first electronic element and the second electronic element which are vertically stacked, the work heat productivity of the first electronic element is larger than that of the second electronic element, and the first electronic element is arranged on a mounting surface;

the insulating and heat-insulating sheet is arranged between the first electronic element and the second electronic element;

the pins are arranged on at least one side of the heat dissipation substrate;

and the sealing layer at least wraps one surface of the heat dissipation substrate provided with the electronic element, and one end of each pin is exposed out of the sealing layer.

Optionally, the first electronic component is a heat-generating power device, and the second electronic component is a driving chip.

Optionally, the surface of the first electronic component is provided with a lamination land for mounting an insulating and heat-insulating sheet and an electrode bonding region for electrically connecting electrodes of the first electronic component.

Optionally, the lamination land surface is a non-conductive area and the lamination land surface is provided with an insulating passivation layer.

Optionally, the insulating and heat insulating sheet is provided with a plurality of through holes through its thickness.

Optionally, the power device is a plurality of switching tubes or a plurality of freewheeling diodes, and the driving chips are single-channel driving chips, and the number of the driving chips is a plurality of that is arranged corresponding to the switching tubes.

Optionally, the driving chip is one of a plurality of high-voltage chip and low-voltage chip combinations and a plurality of high-voltage driving chip sets.

Optionally, the smart power module further includes a third electronic component 5, the third electronic component 5 generates a larger amount of heat in operation than the second electronic component, and the third electronic component 5 is mounted on the mounting surface.

Optionally, the insulating and heat insulating sheet and the first electronic component are fixed by an insulating adhesive.

The utility model discloses an intelligent power module, electronic component among the prior art all compares in the structure of heat dissipation base plate with the individual layer mode, the utility model discloses an IPM module is through the range upon range of setting of the first electronic component that will give out heat greatly and the second electronic component that gives out heat little to set up insulating heat shield between the two, with this effectual area occupied that reduces electronic component, theoretically compare with prior art, its area occupied can reduce half at most, therefore can effectually reduce its cost reduction of whole heat dissipation base plate's volume realization, and reduce the volume of sealing layer, and then make whole IPM module volume effectively reduce, thereby also more made things convenient for the application of IPM module when reducing whole IPM module material cost. Or, in the case of the same size as the existing IPM module, the area of the electronic component, particularly the first electronic component with a large heat generation amount, may be increased to enhance the overcurrent capability thereof, so that the operating power of the IPM module is higher, thereby increasing the power density of the IPM module.

Drawings

Fig. 1 is a cross-sectional view of an IPM module of a sealing layer full encapsulation structure according to an embodiment of the present invention;

fig. 2 is a cross-sectional view of an IPM module of a half-encapsulated layer full encapsulation structure in accordance with an embodiment of the present invention;

fig. 3 is a schematic plan view of an IGBT for the IPM module shown in fig. 1 and 2;

fig. 4 is a cross-sectional view of an IPM module of a sealing layer full cladding structure according to another embodiment of the present invention;

fig. 5 is a cross-sectional view of an IPM module with a half-clad sealant structure according to another embodiment of the present invention;

FIG. 6 is a schematic plan view of a freewheeling diode in the IPM module shown in FIGS. 4 and 5;

fig. 7 to 10 are schematic plan views of IPM modules of the embodiments of the present invention without a sealing layer;

fig. 11 and 12 are schematic circuit diagrams of an IPM module according to an embodiment of the present invention;

fig. 13 is a flowchart of an IPM module manufacturing method according to an embodiment of the present invention.

Reference numerals:

the semiconductor device comprises a bonding wire 1, a first electronic element 2, an IGBT21, a gate bonding region 211, an emitter/source bonding region 212, a first laminated bonding region 213, a free wheel diode 22, an anode bonding region 221, a second laminated bonding region 222, an insulating heat-insulating sheet 3, a second electronic element 4, a driving chip 40, a high-voltage driving chip 41, a low-voltage driving chip 42, a third electronic element 55, a sealing layer 6, a heat dissipation substrate 7, a pin 8 and a wiring layer 10.

Detailed Description

It should be noted that the embodiments and features of the embodiments of the present invention may be combined with each other without conflict in structure or function. The present invention will be described in detail below with reference to examples.

The utility model provides an intelligent power module is IPM module, as shown in fig. 1 to fig. 6, the utility model discloses IPM module of embodiment includes radiating basal plate 7, a plurality of electronic component, insulating heat shield 3, a plurality of pin 8 and sealing layer 6. Wherein the heat dissipating substrate 7 includes a mounting surface for mounting an electronic component and a heat dissipating surface for dissipating heat; the plurality of electronic components comprise a first electronic component 2 and a second electronic component 4, the first electronic component 2 and the second electronic component 4 are arranged in a stacked mode, the work heating value of the first electronic component 2 is larger than that of the second electronic component 4, and the first electronic component 2 is mounted on the mounting surface; the insulating and heat-insulating sheet 3 is arranged between the first electronic component 2 and the second electronic component 4; a plurality of pins 8 are arranged on at least one side of the heat dissipation substrate 7; the sealing layer 6 covers at least one surface of the heat dissipating substrate 7 on which the electronic component 4 is mounted, and one end of each of the leads 8 is exposed from the sealing layer 6.

The heat dissipating substrate 7 generally includes a substrate, an insulating layer, and a wiring layer 10 connected in sequence, and the heat dissipating substrate 7 may be classified into different types according to the plate structure of the substrate, among which an IMS substrate, a DBC substrate, and a copper-prepreg substrate are commonly used. The IMS substrate is generally an IMS substrate, i.e., an aluminum substrate, and the main body thereof is made of an aluminum alloy material; the DBC substrate main body is a ceramic material, and the copper-semi-cured resin substrate main body is a copper material.

In fig. 1 and 4, the sealing layer 6 covers both upper and lower surfaces of the heat dissipating substrate 7, covers the electronic component and the insulating heat insulating sheet 3 provided on the heat dissipating substrate 7, and also covers the leads 8 provided at one end of the heat dissipating substrate 7, and is a full-covering type, and in fig. 2 and 5, the sealing layer 6 covers the upper surface of the heat dissipating substrate 7, that is, covers the heat dissipating substrate 7, the electronic component, the insulating heat insulating sheet 3, and the leads 8 provided at one end of the heat dissipating substrate 7, and the lower surface of the heat dissipating substrate 7, that is, the heat dissipating surface is exposed to the sealing layer 6.

The first electronic component 2 with large heat productivity is arranged between the heat dissipation substrate 7 and the insulating heat insulation sheet 3, the second electronic component 4 with small heat productivity is arranged on the insulating heat insulation sheet 3, so that the heat dissipation of the first electronic component 2 with large heat productivity is realized through the heat dissipation substrate 7 when the first electronic component 2 works, the working stability of the first electronic component is ensured, the insulating heat insulation sheet 3 realizes the insulating and heat insulation effects between the first electronic component 2 and the second electronic component 4, the heat of the first electronic component 2 is prevented from being conducted to the second electronic component 4 to influence the working stability of the second electronic component 4, and the working temperature which can be borne by the second electronic component 4 is lower than that of the first electronic component 2, and the electrical isolation between the first electronic component 2 and the second electronic component is realized. The insulating and heat insulating sheet 3 can be fixed between the first electronic component 2 and the second electronic component 4 by an insulating adhesive, such as an insulating epoxy resin.

Compared with the structure that electronic component among the prior art all installed in heat dissipation base plate with the individual layer mode, the utility model discloses an IPM module is through 2 and the 4 range upon range of settings of the second electronic component that calorific capacity is little of the first electronic component that will give out heat big, and set up insulating heat shield 3 between the two, with this effectual area occupied that has reduced electronic component, theoretically compare with prior art, its area occupied can reduce half at most, therefore can effectual volume that reduces whole heat dissipation base plate 7 realize its cost reduction, and reduce the volume of sealing layer 6, and then make whole IPM module volume effectively reduce, thereby also made things convenient for the application of IPM module when reducing whole IPM module material cost. Or, in the case of the same size as the existing IPM module, the area of the electronic component, particularly the first electronic component 2 with a large heat generation amount, may be increased to enhance the overcurrent capability thereof, so that the operating power of the IPM module is higher, thereby increasing the power density of the IPM module.

In some embodiments of the present invention, the first electronic component 2 is a heat-generating power device, and the second electronic component 4 is the driving chip 40. In the IPM module, the power devices with large heat generation mainly include a switching tube and a freewheeling diode 22, and the switching tube is an IGBT (Insulated Gate Bipolar Transistor) or a MOS (metal oxide semiconductor) tube shown in fig. 2 and 5. Wherein the power device shown in fig. 2 is an IGBT21 as a switching tube, which is stacked under the driving chip 40 with the insulating sheet 3 installed therebetween; the power device shown in fig. 5 is a free wheel diode 22 stacked below a driver chip 40 with an insulating and heat insulating sheet 3 interposed therebetween, and the difference between fig. 1 and 2 and fig. 4 and 5 is that the sealing layer 6 is coated in a different manner, and the other structures are the same.

Further, in some embodiments of the present invention, the surface of the first electronic component 2 is provided with a lamination welding area for mounting the insulating thermal barrier 3 and an electrode bonding area for electrically connecting the bonding wire. Wherein the electrode bonding area has one or more areas according to the difference of the first electronic component 2, and the electrode bonding area needs to be connected to the wiring layer 10 or the lead 8 or other electronic components through the bonding wire 1. The bonding wires 1 are typically gold wires, copper wires, hybrid gold-copper wires, 38um or thin aluminum wires below 38 um. As shown in fig. 3, taking the first electronic component 2 as a power device as an example of an IGBT21, two electrode bonding regions are provided, namely a gate bonding region 211 and an emitter/source bonding region 212, wherein the emitter/source bonding region 212 is an emitter bonding region or a source bonding region according to the type (PNP type or NPN type) of the IGBT 21. The other electrode of the power device is arranged on the other surface of the power device opposite to the electrode charge area, namely, one surface of the power device arranged on the heat dissipation substrate 7, which corresponds to the mounting structure shown in fig. 1 and 2. The first electronic component 2 serving as a power device shown in fig. 6 is a freewheeling diode 22, one of the electrode bonding regions is an anodic bonding region 221, and the other electrode of the first electronic component 2 is also disposed on the other surface on which the electrode charge region is disposed, that is, on the surface mounted on the heat dissipation substrate 7, which corresponds to the mounting structure shown in fig. 4 or 5. These lamination lands of the first electronic component 2, such as the first lamination land 213 in fig. 3 and the second lamination land 222 in fig. 6, are used for mounting the insulating and heat insulating sheet 3, which is located at a distance from the electrode bonding area on the surface of the first electronic component 2, i.e., the other side in contact with the heat dissipating substrate 7. The area of the lamination welding area is similar to that of the insulating and heat-insulating sheet 3 or slightly larger than that of the insulating and heat-insulating sheet 3 so as to realize the mutual fixation of the two. Further, since the lamination welding area is used for installing the insulating and heat-insulating sheet 3 made of insulating material, unlike the electrode bonding area which needs to be electrically connected through the conductive bonding wire 1, the lamination welding area is insulated from the insulating and heat-insulating sheet 3, and therefore, the lamination welding area is preferably a non-conductive area on the surface thereof, and the surface is covered with an insulating passivation layer to play a role of protecting the non-metal layer.

In some embodiments of the present invention, the insulating and heat-insulating sheet 3 is provided with a plurality of through holes (not shown in the figures) throughout its thickness. Through the arrangement of the through holes, a plurality of sealed air-filled fine chambers formed by the through holes are formed between the second electronic component 4 and the first electronic component 2 which are connected up and down by the insulating and heat-insulating sheet 3, and the heat conduction capability of air is lower than that of the insulating and heat-insulating sheet 3, so that the heat-insulating effect between the second electronic component 4 and the first electronic component 2 is further improved, the heat generated during the operation of the first electronic component 2 is reduced and conducted to the second electronic component 4, and the operation stability of the electronic component is further improved.

In some embodiments of the present invention, the driving chip 40 is a single-channel driving chip, and the number of the driving chips is a plurality of that is corresponding to the switch tube. Because the IPM module at least includes six switching tubes such as IGBT21 or MOS tube, which are composed of switching tubes of upper and lower bridge arms, and the switching tube serving as the first electronic component 2 and the driving chip 40 serving as the second electronic component 4 are stacked up and down, each switching tube is correspondingly provided with one driving chip 40, so as to facilitate the operation of the driving switching tube. The driver chip 40 is preferably a single-channel chip with driving capability, i.e., only one IGBT21 can be driven, to optimize cost. Fig. 11 and 12 are schematic diagrams of basic circuits of the IPM module, in fig. 11, each single-channel driver chip 40 is a high voltage driver chip 41(HVIC), which needs to input an independent working power source, i.e., a power source input from VB and VS pins 8 in the drawing, and the high voltage driver chip 41 is used to drive the upper arm switches, i.e., Q1, Q3, and Q5 in fig. 11, and simultaneously can also be used to drive the lower arm switches, i.e., Q2, Q2, and Q6 in fig. 11. In fig. 12, the upper bridge arm switching tubes are connected to the high voltage driving chip 41, the lower bridge arm switching tubes are connected to the low voltage driving chip 42(LVIC), and the low voltage driving chip 42 does not need to input an independent working power supply to the high voltage driving chip 41, which is lower in cost, so that the scheme in fig. 12 is lower than that in fig. 11, but fig. 11 is convenient to produce and manufacture due to the fact that the high voltage driving chips 401 of uniform models are all adopted, so that efficiency is improved.

For the high voltage driving chip 41, the surface thereof has at least six bonding wire pads, which are respectively a low voltage region power supply VDD, a low voltage region ground VSS, a high voltage region power supply VB, a high voltage region ground VS, an input IN and an output HO, and the back surface of the high voltage driving chip 41, i.e. the surface mounted with the insulating and heat insulating sheet 3, is not metallized. For the low voltage driving chip 42, the surface thereof has at least four bonding wire pads, which are respectively a low voltage region power supply VDD, a low voltage region ground VSS, an input IN and an output HO, and the back surface of the high voltage driving chip 41, i.e. the surface where the insulating and heat insulating sheet 3 is mounted, is not metallized.

In some embodiments of the present invention, as shown in fig. 1 and 4, the IPM module further includes a third electronic component 5, the third electronic component 5 generates a larger amount of heat in operation than the second electronic component 4, and the third electronic component 5 is mounted on the mounting surface. As shown in fig. 1, 2, 4 and 5 in particular, a third electronic component 5 is also provided on the side opposite to the side on which the first electronic component 2 is mounted. Considering the reason that if the third electronic component 5 is stacked simultaneously with the first electronic component 2 and the second electronic component 4, the electrodes of the electronic components located in the intermediate layer are electrically connected to the inconvenient lines or electronic components, the third electronic component 5 is independently located with respect to the other electronic components of the first electronic component 2 and the second electronic component 4 in the IPM module. In fig. 1 and 2, the IGBT21, the insulating and heat insulating sheet 3, and the driver chip 40 are stacked, and the free wheel diode 22 serving as the third electronic component 5 in fig. 2 is provided relatively independently; in fig. 4 and 5, the free wheel diode 22, the insulating and heat insulating sheet 3, and the driver chip 40 are stacked, and the IGBT21 serving as the third electronic component 5 in fig. 5 is provided relatively independently.

Fig. 7 to 9 are schematic plan views of the IPM module without the sealant 6. The electronic components in fig. 7 and 9 are distributed in the same manner, and the electronic components in fig. 8 and 10 are distributed in the same manner. In which the electronic components in fig. 7 and 8 are stacked in the same manner as in fig. 1 or 2, and the electronic components in fig. 9 and 10 are stacked in the same manner as in fig. 4 or 5. Taking fig. 7 as an example, the first stacked element formed by the upper arm switching tube (i.e., IGBT21), the insulating and heat-insulating sheet 3, and the driving chip 40, and the second stacked element formed by the lower arm switching tube (i.e., IGBT21), the insulating and heat-insulating sheet 3, and the driving chip 40 are sequentially arranged in an up-down interval manner to form a first element group, and then the three first element groups are arranged in a left-right interval manner. In fig. 8, the upper arm switch tube or the lower arm switch tube, the insulating heat-insulating sheet 3, and the driving chip 40 form a laminated element, and then the laminated element and the freewheeling diode 22 are arranged at intervals up and down to form a second element group, and then six such second elements are arranged at intervals left and right in a group.

The present invention further provides a manufacturing method of the IPM module mentioned in the above embodiments, as shown in fig. 13, the manufacturing method includes the following steps:

step S100, configuring a heat dissipation substrate, and forming a wiring layer on the surface of the heat dissipation substrate;

step S200, a first electronic element or the first electronic element and a third electronic element are configured on a wiring layer;

step S300, fixing an insulating and heat-insulating sheet on the surface of a first electronic element;

step S400, arranging a second electronic element on the surface of the insulating and heat-insulating sheet;

step S500, configuring pins;

step S600, electrically connecting at least one of the first electronic element, the second electronic element and the third electronic element, the wiring layer and the pins through bonding wires;

step S700, performing injection molding on the substrate provided with the electronic element and the pins through a packaging mold to form a sealing layer, wherein the sealing layer coats at least one surface, provided with the electronic element, of the circuit substrate;

and S800, cutting and shaping the pins to form the intelligent power module, and testing the formed intelligent power module.

In step S100, the body of the heat dissipation substrate 7, i.e., the circuit substrate, may be designed according to the required circuit layout, and for example, for a general IPM module, the size of one heat dissipation substrate may be 64mm × 30 mm. Taking a circuit substrate as an aluminum substrate as an example, the aluminum substrate is formed by directly routing 1m × 1m aluminum, the routing knife uses high-speed steel as a material, the motor uses a rotating speed of 5000 r/min, and the routing knife is set at a right angle with the plane of the aluminum; or may be formed by stamping. Then, both surfaces of the circuit substrate may be subjected to an etching prevention treatment, and in the IPM module having the half-encapsulated structure, the surface of the circuit substrate on which the electronic component 4 is not provided is exposed from the sealing layer 6. For the IPM module with the full encapsulation structure, the etching process may not be performed in order to save cost. And then, laminating a copper foil on the surface of the insulating layer, and then, etching the copper foil to locally take out the copper foil so as to form a wiring layer 10 of the circuit, wherein the wiring layer 10 comprises a circuit line, and the electronic wiring layer 10 is provided with a bonding pad for connecting the bonding wire 1 and a lead pad for connecting the lead 8.

In step S200, the first electronic component 2 may be fixed to the wiring layer 10 of the heat dissipating substrate 7 by soldering, for example, by soldering a chip such as the IGBT21/MOS and the free wheel diode 22 as the first electronic component 2 to the wiring layer 10 of the heat dissipating substrate 7. In addition to the arrangement of the first electronic component 2, the IGBT21/MOS, the free wheel diode 22, and the like of the third electronic component 5 may be die-bonded to the wiring layer 10 of the heat dissipating substrate 7.

In step S300, the insulating and heat-insulating sheet 3 may be adhered to the surface of the first electronic component 2, specifically, to the lamination pad of the first electronic component 2, by means of an insulating adhesive. The insulating heat shield 3 is bonded to the lamination lands, such as by an insulating epoxy.

In step S400, the second electronic component 4 may be disposed on the surface of the insulating and heat-insulating sheet 3 by means of an insulating paste. The bottom surface of the second electronic component 4 is not metallized because there is no electrical connection between the insulating and heat insulating sheet 3 and the bottom surface of the second electronic component 4, for example, as the driving chip 40 of the second electronic component 4, the bottom surface of the driving chip 40 is adhered to the surface of the insulating and heat insulating sheet 3 by using insulating epoxy resin.

In step S500, the lead 8 may be soldered to the lead 8 pad of the wiring layer 10 by soldering. It should be noted that the timing of this step with respect to other steps can be adjusted for different types of the heat dissipation substrate 7. As for the DBC substrate, the step of arranging the pins 8 after mounting the second electronic component 4 may be performed at this step, and as for the IMS substrate, the step of soldering the pins 8 to the wiring layer 10 may be performed at the same time as the soldering of the first electronic component 2 and the third electronic component 5, that is, at step S200, instead.

In step S600, the bonding line 1 is connected. For example, the bonding wire 1 pad at the output terminal HO of the high voltage driver chip 40 may be directly connected to the gate bonding region 211 of the IGBT21 or MOS transistor through the bonding wire 1 such as gold wire, copper wire, hybrid gold-copper wire, 38um or thin aluminum wire below 38um, and the bonding wire 1 pad corresponding to the output terminal VDD, VSS, VB, VS, IN of the high voltage driver chip 40 may be directly connected to the pin 8 or connected to the wiring layer 10 through the bonding wire 1 such as gold wire, copper wire, hybrid gold-copper wire, 38um or thin aluminum wire below 38 um. Directly connecting an emitter bonding region of an IGBT21 tube or a source bonding region of an MOS tube to a bonding wire pad of the heat dissipation substrate 7 through a thick aluminum wire of 100um or more than 100 um; the anode bonding region 221 of the driving chip 40 is directly connected to the bonding wire pad of the heat dissipation substrate 7 through a 100um or more thick aluminum wire.

In step S700, this step is a step of realizing the sealing layer 6. In an implementation manner, the heat dissipation substrate 7 with the electronic components and the pins 8 mounted therein in the above step process may be baked in an oxygen-free environment, the baking time should not be less than 2 hours, and the baking temperature and the temperature are selected to be 125 ℃. The heat dissipation substrate 7 with the pins 8 is transferred to a package mold (not shown), wherein the package mold comprises an upper film and a lower film which are arranged up and down, the pins 8 are fixedly arranged between the upper film and the lower film, and the pins 8 fixedly connected with the heat dissipation substrate 7 are contacted with a fixing device positioned on the lower film to position the heat dissipation substrate 7. Wherein set up two at least thimbles on last mould, the free end of thimble can butt in circuit wiring layer 10, through these two thimbles, can be used to control the distance between radiating substrate 7 and the lower mould and realize the location, this distance can not too far away, otherwise can influence the thermal diffusivity, this distance also can not too near, otherwise can cause the injecting glue situation such as not full.

Then, the package mold on which the heat dissipation substrate 7 is placed is clamped, and a sealing resin is injected from the gate. The sealing method may employ transfer mold molding using thermosetting resin or injection mold molding using thermosetting resin. Further, the gas corresponding to the inside of the sealing resin cavity injected from the gate is discharged to the outside through the exhaust port.

Finally, the mold is removed, and after the mold is removed, the sealing resin forms the sealing layer 6, and the free ends of the leads 8 are exposed from the sealing layer 6.

According to the packaging process of the sealing layer 6 and the difference of the packaging mold, the sealing layer 6 can only seal one side of the upper surface of the heat dissipation substrate 7, namely one side on which the electronic element and the pins 8 are arranged, and the bottom surface of the heat dissipation substrate 7, namely the heat dissipation surface, is exposed out of the sealing layer 6, so that a semi-coated packaging structure is formed; the upper and lower surfaces of the heat dissipating substrate 7 may be sealed to form a full-clad structure.

In step S800, the step is a step of cutting and shaping the pins 8 of the IPM module which is a semi-finished product forming the sealing layer 6, and the pins 8 may be shaped according to the length and shape of the module to be used; and further testing the IPM module, for example, performing conventional electrical parameter tests, which generally include insulation voltage resistance, static power consumption, delay time and other test items, and performing appearance AOI tests, which generally include test items such as assembly hole size, pin 8 offset and the like, wherein the qualified IPM module is a finished product. Thereby completing the entire IPM module manufacturing process.

The IPM module manufacturing method of the present invention forms a wiring layer on the surface of a heat dissipation substrate by disposing the heat dissipation substrate, and then disposes a first electronic component 2 on the wiring layer, or the first electronic component 2 and the third electronic component 5, and the insulating and heat-insulating sheet is fixed to the surface of the first electronic component 2, arranging a second electronic element 4 and pins on the surface of the insulating and heat-insulating sheet, electrically connecting at least one of the first electronic element 2, the second electronic element 4 and the third electronic element 5, the wiring layer and the pins through bonding wires, and the substrate provided with the electronic components and the pins is injection-molded through a package mold to form a sealing layer, the sealing layer coats at least one surface, provided with the electronic element, of the circuit substrate, and finally the pins are cut and shaped to form the intelligent power module, and the molded intelligent power module is tested. Compared with the manufacturing process of the IPM module in which the electronic element is installed on the heat dissipation substrate in a single-layer mode in the prior art, the first electronic element 2 with large heat productivity and the second electronic element 4 with small heat productivity are stacked, and the insulating heat-insulating sheet is arranged between the first electronic element 2 and the second electronic element, so that the occupied area of the electronic element is effectively reduced, the size of the whole heat dissipation substrate can be effectively reduced, the cost is reduced, the size of the sealing layer is reduced, the size of the whole IPM module is effectively reduced, and the application of the IPM module is facilitated while the material cost of the whole IPM module is reduced. Or, in the case of the same size as the existing IPM module, the area of the electronic component, particularly the first electronic component 2 with a large heat generation amount, may be increased to enhance the overcurrent capability thereof, so that the operating power of the IPM module is higher, thereby increasing the power density of the IPM module.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship indicated based on the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

Although embodiments of the present invention have been shown and described, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art without departing from the scope of the present invention.

Claims

1. A smart power module, comprising:

the heat dissipation substrate comprises a mounting surface for mounting the electronic element and a heat dissipation surface for dissipating heat;

a plurality of electronic components including a first electronic component and a second electronic component, the first electronic component and the second electronic component being stacked up and down, and an operating heat generation amount of the first electronic component being larger than an operating heat generation amount of the second electronic component, the first electronic component being mounted on the mounting surface;

an insulating and heat-insulating sheet disposed between the first electronic component and the second electronic component;

a plurality of pins disposed on at least one side of the heat-dissipating substrate;

and the sealing layer at least wraps one surface of the heat dissipation substrate provided with the electronic element, and one end of the pin is exposed out of the sealing layer.

2. The smart power module as claimed in claim 1, wherein the first electronic component is a heat-generating power device, and the second electronic component is a driving chip.

3. The smart power module as claimed in claim 2, wherein the surface of the first electronic component is provided with a lamination land for mounting the insulating and heat-insulating sheet and an electrode bonding pad for electrically connecting the electrode of the first electronic component.

4. The smart power module as recited in claim 3 wherein the lamination land surface is a non-conductive area and the lamination land surface is provided with an insulating passivation layer.

5. The smart power module of claim 1, wherein the insulating thermal sheet is provided with a plurality of through holes through a thickness thereof.

6. The intelligent power module according to claim 2, wherein the power device is a plurality of switching tubes or a plurality of freewheeling diodes, and the driving chips are single-channel driving chips, and the number of the driving chips is a plurality of driving chips arranged corresponding to the switching tubes.

7. The smart power module of claim 6 wherein the driver chip is one of a plurality of high voltage and low voltage chip combinations, a plurality of high voltage driver chip sets.

8. The smart power module of claim 1 further comprising a third electronic component having a greater operating heating value than the second electronic component, the third electronic component being mounted to the mounting surface.

9. The smart power module of claim 1, wherein the insulating thermal sheet and the first electronic component are fixed by an insulating paste.