CN113113401A - Semiconductor circuit and method for manufacturing semiconductor circuit - Google Patents
Semiconductor circuit and method for manufacturing semiconductor circuit Download PDFInfo
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- CN113113401A CN113113401A CN202110461821.5A CN202110461821A CN113113401A CN 113113401 A CN113113401 A CN 113113401A CN 202110461821 A CN202110461821 A CN 202110461821A CN 113113401 A CN113113401 A CN 113113401A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention relates to a semiconductor circuit and a manufacturing method of the semiconductor circuit, which comprises a heat dissipation substrate, a circuit wiring layer, a plurality of electronic elements, a plurality of pins, a sealing layer and a protective plate made of metal materials, wherein mounting grooves penetrating through the thickness of the mounting grooves are formed in two ends adjacent to the side edges of the mounting pins of the sealing layer, the protective plate comprises a protective body, the protective body is mounted on the surface of the sealing layer close to a heat dissipation surface, and the sealing layer is formed on the surface of the protective body in an injection molding mode. When passing through mounting groove and notch like the screw through the mounting, its nut is contradicted on the surface of protection body with this to the effect of the protection sealing layer of playing has prevented among the prior art that the nut oppresses the sealing layer and leads to the risk of collapsing the limit, thereby has promoted semiconductor circuit's security and reliability.
Description
Technical Field
The invention relates to a semiconductor circuit and a manufacturing method of the semiconductor circuit, and belongs to the technical field of semiconductor circuit application.
Background
A semiconductor circuit is a power-driven type product that combines power electronics and integrated circuit technology. The outer surface of a semiconductor circuit is generally encapsulated with a resin material formed by injection molding to form a sealing layer, and the circuit board and the electronic components inside are sealed, and the leads protrude from one side or both sides of the sealing layer. As shown in fig. 1, the two sides of the sealing layer 200 are provided with mounting grooves 201, so that when the semiconductor circuit is mounted on a circuit board in the application process of the semiconductor circuit, a fixing member such as a screw penetrates through the mounting groove 201 for fixing, and in the screw fixing process, when a screw cap abuts against the surface of the sealing layer at the mounting groove 201, if the force for screwing the screw is too large, the surface of the sealing layer at the mounting groove 201 is prone to edge collapse, thereby damaging the sealing layer, even exposing a heat dissipation substrate inside the sealing layer, and causing the semiconductor circuit to be damaged and unable to work normally.
Disclosure of Invention
The invention aims to solve the technical problem that the sealing layer at the mounting groove is easy to break to cause damage of a semiconductor circuit when the surface of the injection molding sealing layer is fixed in the mounting groove through a fixing piece in the application process of the existing semiconductor circuit.
Specifically, the present invention discloses a semiconductor circuit comprising:
the heat dissipation substrate comprises a mounting surface and a heat dissipation surface;
a circuit wiring layer provided on the mounting surface of the heat dissipation substrate, the circuit wiring layer being provided with a plurality of connection pads;
a plurality of electronic elements disposed on the bonding pads of the circuit wiring layer, the plurality of electronic elements including power devices and driving chips;
the pins are arranged on at least one side of the heat dissipation substrate;
the sealing layer at least wraps one surface of the heat dissipation substrate provided with the electronic element, one end of each pin is exposed out of the sealing layer, and two sides of the sealing layer, which are adjacent to the side edges of the mounting pins, are provided with mounting grooves penetrating through the thickness of the sealing layer;
the protection shield of metal material, protection shield include the protection body, and the protection body setting is on the surface of the sealing layer that is close to the cooling surface, and the sealing layer is moulded plastics and is formed on the surface of protection body.
Optionally, a sealing layer is filled between the heat dissipation surface and the protection plate, and the thickness of the filling sealing layer is 0.5mm to 5 mm.
Optionally, the surface of the heat dissipating surface is further provided with an insulating layer, and the surface of the protection plate is closely attached to the insulating layer.
Optionally, the surface of the heat dissipation surface is closely attached to the surface of the protection board, and the protection board is electrically connected to the ground wire on the circuit wiring layer.
Optionally, a connecting neck perpendicular to the protection body is further disposed at a position, opposite to the mounting groove, of the periphery of the notch of the protection body, an outer wall surface of the connecting neck is closely attached to an inner wall surface of the mounting groove, a flanging is further disposed at an end of the connecting neck, and the flanging is closely attached to one surface, away from the protection body, of the sealing layer.
Optionally, the flange is raised above the surface of the sealing layer.
Optionally, the semiconductor circuit further comprises a plurality of bonding wires connected between the plurality of electronic components, the circuit wiring layer, and the plurality of pins.
Optionally, the semiconductor circuit further includes another insulating layer provided between the heat dissipation substrate and the circuit wiring layer, the other insulating layer being made of a resin material filled with a filler of alumina and aluminum carbide.
Optionally, the filler is angular, spherical, or a mixture of angular and spherical.
The invention also provides a manufacturing method of the semiconductor circuit, which comprises the following steps:
configuring a heat dissipation substrate, and sequentially forming an insulating layer and a circuit wiring layer on the surface of the heat dissipation substrate;
disposing an electronic component on the circuit wiring layer;
configuring pins;
electrically connecting the electronic element, the wiring layer and the pins through bonding wires;
a protection plate is configured and comprises a protection body, notches with the same shape as the opening shape of the end face of the mounting groove are arranged at the two ends of the protection body, a connecting neck perpendicular to the protection body is further arranged at the periphery of each notch, and an outward flange is further arranged at the end part of the connecting neck;
the method comprises the following steps that injection molding is carried out on a radiating substrate provided with electronic elements and pins and a protective plate through a packaging mold to form a sealing layer, wherein the sealing layer covers two surfaces of the radiating substrate, mounting grooves are formed in two ends of the sealing layer, a connecting neck is tightly attached to the inner wall surfaces of the mounting grooves, and one surface of a protective body is exposed out of the sealing layer;
and cutting and molding the pins to form a semiconductor circuit, and testing the molded semiconductor circuit.
The semiconductor circuit comprises a heat dissipation substrate, a circuit wiring layer, a plurality of electronic elements, a plurality of pins, a sealing layer and a protective plate made of metal materials, wherein mounting grooves penetrating through the thickness of the sealing layer are formed in two ends adjacent to the side edges of the mounting pins of the sealing layer, the protective plate comprises a protective body, the protective body is mounted on the surface of the sealing layer close to a heat dissipation surface, and the sealing layer is formed on the surface of the protective body in an injection molding mode. When passing through mounting groove and notch like the screw through the mounting, its nut is contradicted on the surface of protection body with this to the effect of the protection sealing layer of playing has prevented among the prior art that the nut oppresses the sealing layer and leads to the risk of collapsing the limit, thereby has promoted semiconductor circuit's security and reliability.
Drawings
FIG. 1 is a perspective view of a prior art semiconductor circuit;
fig. 2 is a perspective view of a protection plate according to an embodiment of the present invention;
fig. 3 is a perspective view of the protection plate shown in fig. 2 in another direction;
FIG. 4 is a perspective view of a semiconductor circuit according to an embodiment of the present invention;
FIG. 5 is a perspective view of the semiconductor circuit shown in FIG. 4 in another orientation;
FIG. 6 is a cross-sectional view of the semiconductor circuit shown in FIG. 4 at a side of the mounting groove;
FIG. 7 is a schematic structural diagram of a lead before being mounted according to an embodiment of the present invention;
fig. 8 is a cross-sectional view of a semiconductor circuit at a side of a mounting groove according to another embodiment of the present invention.
Reference numerals:
the protection plate comprises a protection plate 100, a protection body 101, a flanging 102, a connecting neck 103, a sealing layer 200, a mounting groove 201, a pin 301, a reinforcing rib 302, a freewheeling diode 303, a bonding wire 304, a circuit wiring layer 305, an IGBT306, a driving chip 307, a first insulating layer 308, a heat dissipation substrate 309 and a second insulating layer 310.
Detailed Description
It is to be noted that the embodiments and features of the embodiments may be combined with each other without conflict in structure or function. The present invention will be described in detail below with reference to examples.
The semiconductor circuit provided by the invention is a circuit module which integrates a power switch device, a high-voltage driving circuit and the like together and is sealed and packaged on the outer surface, and is widely applied to the field of power electronics, such as the fields of frequency converters of driving motors, various inversion voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency household appliances and the like. The semiconductor circuit herein may be referred to by various other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or hybrid integrated circuit, Power semiconductor Module, Power Module, etc. In the following embodiments of the present invention, collectively referred to as a Modular Intelligent Power System (MIPS).
As shown in fig. 2 to 6, the modular smart power system of the present invention includes a heat dissipation substrate 309, a circuit wiring layer 305, a plurality of electronic components, a plurality of pins 301, a sealing layer 200, and a protection plate 100 made of a metal material.
The heat dissipation substrate 309 is made of a metal material, and includes an upper mounting surface and a lower heat dissipation surface, and may be a rectangular plate made of aluminum such as 1100, 5052, and the like. Alternatively, the heat dissipating substrate 309 may be a non-metal substrate, and the main body thereof is made of an insulating material with good thermal conductivity, such as glass or ceramic.
For the heat dissipation substrate 309 of a metal material, it is also necessary to provide the first insulating layer 308 to provide the circuit wiring layer 305 on the first insulating layer 308 to achieve electrical isolation between the circuit wiring layer 305 and the heat dissipation substrate 309. The first insulating layer 308 is formed to cover at least one surface of the heat dissipation substrate 309, and is made of a resin material such as epoxy resin, and a filler such as alumina and aluminum carbide is filled inside the resin material to improve thermal conductivity. In order to increase the thermal conductivity, the shape of these fillers may be angular, and in order to avoid the risk of the fillers damaging the contact surfaces of the electronic components arranged on the surface thereof, the fillers may be spherical, angular, or a mixture of angular and spherical. The heat dissipation substrate 309 in fig. 6 is made of metal. For the non-metal substrate, the heat dissipation substrate 309 made of metal material does not include the first insulating layer 308, and the body thereof is made of insulating material. The circuit wiring layer 305 may be formed by etching a copper foil or by printing a paste-like conductive medium, which may be a conductive material such as graphene, solder paste, or silver paste. A wiring of a circuit is formed on the circuit wiring layer 305, and a plurality of connection pads (not shown in the figure) for connecting the wiring are provided for mounting the electronic components and the pins 301. The pins 301 are fixedly and electrically connected to the connection pads of the heat dissipation substrate 309 near the edge thereof, and have a function of inputting and outputting signals with an external circuit connected to the modular smart power system, in this embodiment, as shown in fig. 6, a plurality of pins 301 are led out from one side of the heat dissipation substrate 309, and may also be led out from two opposite sides of the heat dissipation substrate 309 in other implementations. The lead 301 is generally made of a metal such as copper, a nickel-tin alloy layer is formed on the surface of the copper by chemical plating and electroplating, the thickness of the alloy layer is generally 5 μm, and the copper can be protected from corrosion and oxidation by the plating layer and the solderability can be improved.
Electronic components are disposed on the connection pads of the circuit wiring layer 305, and the electronic components include a power device and a driving chip 307, wherein the power device includes a switching tube such as an IGBT306(Insulated Gate Bipolar Transistor) or a MOS (metal oxide semiconductor) and the like, and also includes a freewheeling diode 303, which consumes a large amount of power and generates a large amount of heat, so that the temperature during the operation of the modular smart power system is higher than the room temperature.
The sealing layer 200 may be formed of resin, molded using a thermosetting resin by a transfer molding method, or molded using a thermoplastic resin by an injection molding method. The sealing layer 200 has two packaging structures, one is that the sealing layer 200 covers the upper and lower surfaces of the heat dissipation substrate 309, and covers the electronic components arranged on the heat dissipation substrate 309, and also covers the pins 301 arranged at one end of the heat dissipation substrate 309, which is a full-covering mode of the sealing layer 200; in another packaging method, the sealing layer 200 covers the upper surface of the heat dissipating substrate 309, i.e. covers the heat dissipating substrate 309, the electronic component and the leads 301 disposed at one end of the heat dissipating substrate 309, and the lower surface of the heat dissipating substrate 309, i.e. the heat dissipating surface, is exposed out of the sealing layer 200, thereby forming a half-packaging method of the sealing layer 200. Fig. 6 shows a full coating mode of the sealing layer 200.
As shown in fig. 1, mounting grooves 201 penetrating the thickness of the sealing layer 200 are further formed at both ends adjacent to the sides of the mounting pins 301, and the cross section of the mounting grooves 201 is generally U-shaped, so that the screw portions of fixing members such as screws can pass through the mounting grooves 201 to fix the MIPS on the circuit board. When the screw fixes the MIPS, the nut of the screw abuts against the surface of the sealing layer 200 at the position of the mounting groove 201 to realize fixation. If too much force is applied during screwing, the nut presses the sealing layer 200 at the position where the sealing layer 200 is pressed, the sealing layer 200 is broken, the heat dissipation substrate 309 is seriously exposed, and the electronic elements and the circuit wiring layer 305 on the heat dissipation substrate 309 are damaged, so that the MIPS cannot normally work.
To solve this problem, a protective plate 100 made of a metal material, such as copper, aluminum or an alloy material, is disposed on the surface of the sealing layer 200. The protection plate 100 includes a protection body 101, and the protection body 101 is mounted on a surface of the sealing layer 200 near the heat radiating surface, i.e., the surface where the nut contacts the sealing layer 200. Protection body 101 and sealing layer 200 closely laminate the setting, and protection body 101 is located the position department of the mounting groove 201 of sealing layer 200 and is provided with the notch unanimous with the terminal surface opening shape of mounting groove 201, like this the mounting piece when the screw passes mounting groove 201 and notch, its nut is contradicted on the surface of protection body 101, thereby the effect of protection sealing layer 200 that plays, nut oppression sealing layer causes the sealing layer to collapse the limit and lead to the unable problem of MIPS inefficacy when having prevented among the prior art like the screw, consequently, MIPS safety in utilization and reliability have been improved. In order to achieve close fitting of the protection body 101 and the sealing layer 200, the sealing layer 200 is first disposed in a mold during molding, such as molding by thermoplastic resin, and then the protection body 100 is injected with thermoplastic resin on the surface of the protection body 101, which is cooled to integrate the protection body 101 and the sealing layer 200 with each other. Therefore, the protection body 101 is tightly combined with the sealing layer 200, the phenomenon that the protection body and the sealing layer are separated in the later use process cannot occur, and the use stability is ensured. Wherein the shape of the protective body 101 may be such as to completely conform to the surface of the sealing layer 200 as shown in fig. 4 and 5, such that the protective body 101 covers the entire surface of the sealing layer 200. The surface of the sealing layer 200 can be partially covered, only the notch with the shape consistent with the opening shape of the end face of the mounting groove 201 is arranged at the position of the mounting groove 201, and the surface of the sealing layer 200 is not completely covered at other positions of the protection body 101, so that the material consumption of the protection body 101 made of metal can be reduced, and the cost is saved while the MIPS module is protected.
In some embodiments of the present invention, as shown in fig. 2 to 6, a connecting neck 103 perpendicular to the protection body 101 is further disposed at a position of the notch periphery of the protection body 101 opposite to the mounting groove 201, an outer wall surface of the connecting neck 103 is tightly connected to an inner wall surface of the mounting groove 201, an end of the connecting neck 103 is further provided with a flange 102, and the flange 102 is tightly connected to a surface of the sealing layer 200 away from the protection body 101. On the basis of the solution that the protection plate 100 in the previous embodiment is mainly a flat plate for protecting the body 101, the protection plate 100 in this embodiment is added with a connecting neck 103 vertically connected to the periphery of the protection body 101 and the notch, and a flange 102 parallel to the protection body 101 and disposed on the connecting neck 103. The flange 102 is tightly connected to the other side of the sealing layer 200 remote from the protective body 101. The connection between the connecting neck 103 and the protection body 101 may be formed by welding, or may be formed by punching the protection body 101 after slotting, and the outward flange 102 may be formed by punching the connecting neck 103. The connecting neck 103 and the flange 102 form a snap-fit structure of the protection body 101, so that the protection body 101 is more tightly fixed to the sealing layer 200. When the protection body 101, the connecting neck 103 and the flange 102 are connected to the sealing layer 200, in the above embodiment, in the process of forming the sealing layer 200 by injection molding, an assembly of the protection body 101, the connecting neck 103 and the flange 102 is placed in a mold cavity, a resin material such as a thermoplastic resin is injected onto the protection body 101, and the thickness of the injected resin material is close to the distance between the flange 102 and the protection body 101, so that the connecting neck 103 and the flange 102 are tightly combined with the thermoplastic resin. The protection plate 100 with the added connecting neck 103 and the flanging 102 is more firmly combined with the sealing layer 200 in the installation process, and the protection plate 100 and the sealing layer 200 are not separated from each other due to the impact of installation fixing pieces such as screw caps on the protection body 101.
Further, in some embodiments of the present invention, as shown in FIG. 6, the flange 102 is raised above the surface of the seal layer 200. In fig. 6, the flange 102 protrudes slightly beyond the surface of the seal layer 200, e.g., by one of 0.2mm to 2 mm. In the application process of the MIPS, one surface of the sealing layer 200, which is far away from the protection body 101, is generally installed on the surface of an electric control board such as a PCB, and the pins 301 of the sealing layer are inserted into the pad through holes of the PCB and welded, so that when the sealing layer is fixed by a fixing part such as a screw, the flanging 102 abuts against the surface of the PCB, the sealing layer 200 cannot contact with the surface of the PCB, and a small gap exists between the sealing layer and the PCB, thereby further protecting the sealing layer 200 from the abutting compression force of the PCB, the force applied by the screw fixation completely exists in the protection body 101 and the flanging 102, and the middle of the sealing layer and the flanging is supported by the connecting neck 103, so that the sealing.
In some embodiments of the present invention, as shown in fig. 6, the sealing layer 200 is filled between the heat dissipation surface and the protection body 101, and the thickness of the filling sealing layer 200 is 0.5mm to 5 mm. As shown in fig. 6, a thinner sealing layer 200 is filled between the heat dissipation surface of the heat dissipation substrate 309 and the other surface of the protection body 101, and the thickness of the sealing layer 200 is much thinner than the thickness of the sealing layer 200 sealing the other surface of the heat dissipation substrate 309, i.e. the surface on which the electronic component is mounted, for example, 1/5 to 1/11, which is the thickness from the mounting surface of the heat dissipation substrate 309 to the surface of the sealing layer 200, the thinner sealing layer 200 facilitates that the heat of the heat dissipation surface of the heat dissipation substrate 309 rapidly passes through the thinner sealing layer 200 to be transferred to the mounting board made of metal, thereby accelerating the heat dissipation of the internal power device during MIPS operation.
In some embodiments of the present invention, as shown in fig. 8, a second insulating layer 310 is further disposed on a surface of the heat dissipation surface, and the surface of the protection body 101 is closely attached to the second insulating layer 310. In contrast to the previous embodiment in which the thin sealing layer 200 is directly filled in the protection body 101 and the heat dissipation surface, the embodiment uses the second insulating layer 310 instead of the thin sealing layer 200, and the second insulating layer 310 is made of an insulating material with high thermal conductivity, for example, a resin material such as epoxy resin, and the inside of the resin material is filled with fillers such as alumina and aluminum carbide to improve the thermal conductivity. The second insulating layer 310 has a higher thermal conductivity than the sealing layer 200, so that the heat of the heat dissipation surface is more effectively transmitted to the protection body 101, thereby better accelerating the heat dissipation of the internal power device during the operation of the MIPS and improving the operation stability of the internal power device.
In some embodiments of the present invention, as shown in fig. 6 and 8, the modular smart power system further comprises a plurality of bonding wires 304, the bonding wires 304 being connected between the plurality of electronic components, the circuit wiring layer 305, and the plurality of pins 301. Such as keys and wires, may connect electronic components to electronic components, may also connect electronic components to circuit wiring layer 305, may also connect electronic components to pin 301, and may also connect circuit wiring layer 305 to pin 304. The electronic components are the IGBT306, the driver chip 307, the freewheeling diode 303, and others such as resistors, capacitors, etc. mentioned in the above embodiments. The bond wires 304 are typically gold wires, copper wires, hybrid gold and copper wires, 38um or thin aluminum wires below 38um, or thick aluminum wires above 100um or 100 um.
In some embodiments of the present invention, the surface of the heat dissipation surface is closely attached to the surface of the protection body 101, and the protection board 100 is electrically connected to the ground line on the circuit wiring layer 305. Unlike the above two embodiments, there is no other medium between the heat dissipation surface of the heat dissipation substrate 309 and the other surface of the protection body 101, and the two are closely attached. Since the heat dissipating surface of the heat dissipating substrate 309 and the protection body 101 are generally made of metal, the two are tightly combined to realize electrical connection. Because the protection body 101 is exposed on the surface of the MIPS, in order to prevent leakage, the protection body 101 needs to be electrically connected to the ground wire of the circuit wiring layer 305 on the heat dissipation substrate 309, holes can be formed in the circuit wiring layer 305 and the first insulating layer 308, so that the surface of the heat dissipation substrate 309 in contact with the first insulating layer 308 is exposed, and then the metal surface of the heat dissipation substrate 309 and the ground wire of the circuit wiring layer 305 are connected through the bonding wire 304, so that the grounding of the protection plate 100 is realized through the grounding of the heat dissipation substrate 309, and the safety in the working process of the MIPS is ensured.
The invention further provides a manufacturing method of the modular intelligent power system mentioned in the above embodiment, the manufacturing method includes the following steps:
step S100 of disposing a heat dissipation substrate 309, and sequentially forming an insulating layer and a circuit wiring layer 305 on a surface of the heat dissipation substrate 309;
step S200 of disposing an electronic component in the circuit wiring layer 305;
step S300, configuring a pin 301;
step S400, electrically connecting the electronic element, the wiring layer and the pins 301 through bonding wires 304;
step S500, configuring a protection plate 100, wherein the protection plate 100 comprises a protection body 101, notches are formed in two ends of the protection body 101, a connecting neck 103 perpendicular to the protection body 101 is further arranged on the periphery of each notch, and a flanging 102 is further arranged at the end of each connecting neck 103;
step S600, performing injection molding on the heat dissipation substrate 309 provided with the electronic component and the pin 301 and the protection plate 100 through a packaging mold to form a sealing layer 200, wherein the sealing layer 200 covers two surfaces of the heat dissipation substrate 309, mounting grooves 201 are formed at two ends of the sealing layer 200, an opening of an end surface of each mounting groove 201 is consistent with a notch, the connecting neck 103 is tightly attached to an inner wall surface of each mounting groove 201, and one surface of the protection body 101 is exposed out of the sealing layer 200;
step S700, cutting and molding the pin 301 to form the MIPS, and testing the molded MIPS.
In step S100, the heat dissipation substrate 309 with a suitable size can be designed according to a required circuit layout, for example, for a general modular smart power system, one size can be selected to be 64mm × 30 mm. Taking an aluminum substrate with a heat dissipation substrate 309 as an example, the aluminum substrate is formed by directly performing routing processing on 1m × 1m aluminum, the routing uses high-speed steel as a material, a motor rotates at 5000 rpm, and the routing and the aluminum plane form a right-angle lower cutter; or may be formed by stamping. Then, both sides of the heat dissipation substrate 309 can be subjected to anti-corrosion treatment, and for the modular intelligent power system with the half-encapsulated structure, the side, not provided with the electronic component, of the heat dissipation substrate 309 is exposed out of the sealing layer 200, so that the anti-corrosion property of the heat dissipation substrate is enhanced, and the heat dissipation substrate is not easily oxidized in the using process. And aiming at the modularized intelligent power system with the full-packaging structure, in order to save cost, the anti-corrosion treatment can be omitted. Then, an insulating layer is disposed on the surface of the heat dissipating substrate 309, and the insulating layer is formed on the surface of the aluminum substrate by hot pressing. The insulating layer may be made of a resin material such as epoxy resin, and a filler such as alumina and aluminum carbide is filled in the resin material to improve thermal conductivity. In order to increase the thermal conductivity, the shape of these fillers may be angular, and in order to avoid the risk of the fillers damaging the contact surfaces of the electronic components arranged on the surface thereof, the fillers may be spherical, angular, or a mixture of angular and spherical. In order to improve the withstand voltage characteristic, the thickness of the insulating layer may be designed to be 110 um.
Then, a copper foil is laminated on the surface of the insulating layer, and then the copper foil is etched to partially take out the copper foil to form a circuit wiring layer 305, wherein the circuit wiring layer 305 includes a circuit line including a trace for forming a circuit and a plurality of connection pads for connecting the trace. To improve the current capacity, the thickness of the circuit wiring layer 305 may be designed to be 0.07 mm.
In step S200, the electronic component may be fixed to the connection pad of the circuit wiring layer 305 by soldering. For example, the power device and the resistance-capacitance element can be soldered to the connection pad, and the driver chip 307 can be fixed to the connection pad by an epoxy adhesive.
In step S300, this step includes a process of manufacturing the pin 301 and a process of connecting the pin 301 to the connection pad. The manufacturing process of the lead 301 is as follows: all the pins 301 are made of a metal base material such as a copper base material, for example, the pins are made into a strip shape with the length of 25mm, the width of 1.5mm and the thickness of 1mm, and a certain radian can be pressed and shaped at one end of the pins for the convenience of assembly; then, a nickel layer is formed on the surface of the pin 301 by an electroless plating method: the nickel layer is formed on the surface of the copper material with a special shape by the mixed solution of nickel salt and sodium hypophosphite and adding a proper complexing agent, the metal nickel has strong passivation capability, a layer of extremely thin passivation film can be rapidly generated, and the corrosion of atmosphere, alkali and certain acid can be resisted. The nickel plating crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 mu m; then, by an acid sulfate process, the copper material with the formed shape and the nickel layer is soaked in a plating solution with positive tin ions for electrifying at room temperature, a nickel-tin alloy layer is formed on the surface of the nickel layer, the thickness of the nickel layer is generally controlled to be 5 mu m, and the protection and the weldability are greatly improved by the formation of the nickel layer.
Further, in order to prevent the electronic components from being damaged by static electricity in the subsequent processing steps, specific positions of the leads 301 are connected by the reinforcing ribs 302, as shown in fig. 7. This also facilitates securing of the pins 301 during subsequent connection to the connection pads.
The process of attaching the connection pins 301 to the connection pads is as follows: one end of the pin 301 is placed on the connecting pad, the other end of the pin 301 needs to be fixed by a carrier, the carrier is made of materials such as synthetic stone and stainless steel, and due to the connecting effect of the pin 301 reinforcing ribs 302, the pin 301 is conveniently fixed at the position of the pad. Then, the circuit board traces placed on the carrier traces are soldered and fixed on the connection pads by reflow soldering, and curing of solder paste or silver paste.
In step S400, the step is to route the bonding wires 304. As shown in fig. 6, one of the driving bonding pad traces of the driving chip 307 may be directly connected to the gate bonding region (not shown) of the IGBT306 trace tube by the bonding wire 304 trace such as gold wire, copper wire, gold-copper hybrid wire, 38um or thin aluminum wire below 38um, and the other driving bonding pad traces of the driving chip 307 may be directly connected to the lead 301 trace or the connection pad (not shown) of the circuit wiring layer 305 by the bonding wire 304 trace such as gold wire, copper wire, gold-copper hybrid wire, 38um or thin aluminum wire below 38 um. The emitter bonding region of the wiring pipe of the IGBT306 is directly connected to the connection of the heat dissipation substrate 309 through a thick aluminum wire of 100um or more.
In step S500, this step is a step of manufacturing the protective plate 100. The protection plate 100 includes a protection body 101, notches with the same shape as the end face opening of the mounting groove 201 are arranged at two ends of the protection body 101, a connection neck 103 perpendicular to the protection body 101 is further arranged at the periphery of each notch, and a flanging 102 is further arranged at the end of the connection neck 103. Taking the shape of the protective plate 100 covering the surface of the sealing layer 200 as an example, a metal plate coil stock (the metal plate coil stock can be made of copper, aluminum and other materials with good toughness and good heat dissipation) with the thickness of 0.3-1mm and the width of 10-50mm is conveyed into a progressive die of a stamping device, a rectangular metal plate with four corners subjected to corner cutting treatment is firstly stamped out of a first stage of the die, the shape of the metal plate is consistent with that of the protective body 101, notches of two small grooves are symmetrically stamped out of two sides of the metal plate in a second stage, two small grooves are enlarged to form a stretching edge to form a connecting neck 103 in a third stage, the two small grooves are continuously enlarged to form a size for connecting a fixing part such as a screw to pass through in a fourth stage, the two enlarged small grooves are final notches, and the free end of the connecting neck 103 is stamped to form an outward flange 102 in a fifth stage.
In step S600, the step is a step of implementing the sealing layer 200 and mounting the protective plate 100. Firstly, the heat dissipation substrate 309 provided with the electronic element and the pin 301 in the above step process can be baked in an oxygen-free environment, the baking time is not less than 2 hours, and the baking temperature is selected to be 125 ℃. Next, the protection plate 100 is placed in a packaging mold (not shown), wherein the packaging mold comprises an upper film and a lower film disposed above and below, and the outer surface of the protection body 101 contacts with the bottom surface of the cavity of the packaging mold. Then, the baked heat dissipation substrate 309 is transported to a package mold, and the heat dissipation substrate 309 is positioned by contacting the pins fixedly connected to the heat dissipation substrate 309 with a fixing device located on the lower mold, so that a small gap, for example, 0.5mm to 5mm, is reserved between the heat dissipation surface of the heat dissipation substrate 309 and the inner surface of the protection body 101. At least two ejector pins are arranged on the upper die, the free ends of the ejector pins can be abutted to the circuit wiring layer 305, and the two ejector pins can be used for controlling the distance between the radiating substrate 309 and the protection body 101 to realize positioning, the distance cannot be too far, otherwise the radiating performance can be influenced, the distance cannot be too close, otherwise the situations of insufficient glue injection and the like can be caused. Then, the package mold on which the heat dissipation substrate 309 is placed is clamped, and a sealing resin is injected from the gate. The sealing method may employ transfer mold molding using thermosetting resin or injection mold molding using thermosetting resin. Further, the gas corresponding to the inside of the sealing resin cavity injected from the gate is discharged to the outside through the exhaust port. Finally, demolding is carried out, after demolding, the sealing resin forms the sealing layer 200, the two ends of the sealing layer 200 are provided with the installation grooves 201 formed by the packaging mold, the free ends of the pins 301 are exposed out of the sealing layer 200, and the protection plate 100 body, the connecting neck 103 and the flanging 102 are tightly attached to the sealing layer 200.
In step S700, the step is a step of cutting and shaping the pin 301 trace of the semi-finished modular intelligent power system forming the sealing layer 200, and the shaping of the pin 301 trace and the cutting of the length of the pin 301 can be performed according to the length and shape requirements of use, and the reinforcing ribs 302 are cut off; and further testing the modular intelligent power system, for example, performing conventional electrical parameter tests, which generally include test items such as insulation voltage resistance, static power consumption and delay time, and performing appearance AOI tests, which generally include test items such as assembly hole size and pin 301 routing offset, wherein the qualified products are finished products. Thereby completing the manufacturing process of the whole modular intelligent power system.
The manufacturing method of the modular intelligent power system comprises the steps of forming a circuit wiring layer 305 on the surface of a radiating substrate 309 by configuring the radiating substrate 309, configuring an electronic element and a configuration pin 301 on the circuit wiring layer 305, then electrically connecting the electronic element, the wiring layer and the pin 301 through a bonding wire 304, configuring a protective plate 100, carrying out injection molding on the radiating substrate 309 provided with the electronic element and the pin 301 and the protective plate 100 through a packaging mold to form a sealing layer 200, wherein the sealing layer 200 covers two surfaces of the radiating substrate 309, one surface of the protective plate 100 is exposed out of the sealing layer 200, finally cutting and molding the pin 301 to form a MIPS, and testing the formed MIPS. Through increasing protection plate 100 on the surface of sealing layer 200, and protection body 101 of protection plate 100 is provided with the notch unanimous with the terminal surface opening shape of mounting groove 201 in the position of mounting groove 201 of sealing layer 200, when MIPS passes through the mounting piece like the fixed MIPS of screw in subsequent application like this, its nut is contradicted on the surface at protection plate 100, thereby the effect of protection sealing layer 200 that plays, prevented among the prior art nut oppression sealing layer 200 and led to the risk of collapsing the limit, thereby MIPS's security and reliability have been promoted. And protection plate 100 combines with sealing layer 200 in the process of forming sealing layer 200, and the two are connected closely, have avoided protection plate 100 and sealing layer 200 to separate in the application of later stage and lead to the MIPS to have the damage problem.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A semiconductor circuit, comprising:
the heat dissipation substrate comprises a mounting surface and a heat dissipation surface;
a circuit wiring layer provided on the mounting surface of the heat dissipation substrate, the circuit wiring layer being provided with a plurality of connection pads;
a plurality of electronic elements disposed on the pads of the circuit wiring layer, the plurality of electronic elements including power devices and driving chips;
a plurality of pins disposed on at least one side of the heat-dissipating substrate;
the sealing layer at least wraps one surface of the heat dissipation substrate provided with the electronic element, one end of each pin is exposed out of the sealing layer, and mounting grooves penetrating the thickness of the sealing layer are formed in two sides, adjacent to the side edges where the pins are mounted, of the sealing layer;
the protection plate is made of metal materials and comprises a protection body, the protection body is arranged close to the heat radiating surface, the surface of the sealing layer is formed by injection molding, the sealing layer is arranged on the surface of the protection body, and a notch which is consistent with an end face opening of the mounting groove is formed in the position, opposite to the mounting groove, of the protection body.
2. The semiconductor circuit according to claim 1, wherein the sealing layer is filled between the heat dissipation surface and the protective plate, and a thickness of the sealing layer is 0.5mm to 5 mm.
3. The semiconductor circuit according to claim 1, wherein an insulating layer is further provided on a surface of the heat dissipating surface, and wherein a surface of the protective plate is closely attached to the insulating layer.
4. The semiconductor circuit according to claim 1, wherein a surface of the heat dissipating surface is closely attached to a surface of the protective plate, and the protective plate is electrically connected to a ground line on the circuit wiring layer.
5. The semiconductor circuit according to claim 1, wherein a connecting neck perpendicular to the protection body is further provided at a position where a periphery of the notch of the protection body is opposite to the mounting groove, an outer wall surface of the connecting neck is in close contact with an inner wall surface of the mounting groove, an end portion of the connecting neck is further provided with a flanging, and the flanging is in close contact with a surface of the sealing layer away from the protection body.
6. The semiconductor circuit of claim 5, wherein the flange is raised above a surface of the sealing layer.
7. The semiconductor circuit of claim 1, further comprising a plurality of bond wires connected between the plurality of electronic components, the circuit wiring layer, and the plurality of pins.
8. The semiconductor circuit according to claim 1, further comprising another insulating layer provided between the heat dissipation substrate and the circuit wiring layer, the other insulating layer being made of a resin material filled with a filler of aluminum oxide and aluminum carbide.
9. The semiconductor circuit of claim 8, wherein the filler is angular, spherical, or a mixture of angular and spherical.
10. A method for manufacturing a semiconductor circuit according to any one of claims 1 to 9, characterized in that the method comprises the steps of:
configuring a heat dissipation substrate, and sequentially forming an insulating layer and a circuit wiring layer on the surface of the heat dissipation substrate;
disposing an electronic component on the circuit wiring layer;
configuring pins;
electrically connecting the electronic element, the wiring layer and the pins through bonding wires;
configuring a protection plate, wherein the protection plate comprises a protection body, notches are formed in two ends of the protection body, a connecting neck perpendicular to the protection body is further arranged on the periphery of each notch, and an outward flange is further arranged at the end part of each connecting neck;
performing injection molding on the heat dissipation substrate provided with the electronic element and the pin and the protection board through a packaging mold to form a sealing layer, wherein the sealing layer coats two surfaces of the heat dissipation substrate, mounting grooves are formed in two ends of the sealing layer, an end surface opening of each mounting groove is consistent with the corresponding notch, the connecting neck is tightly attached to the inner wall surface of each mounting groove, and one surface of the protection body is exposed out of the sealing layer;
and cutting and molding the pins to form the semiconductor circuit, and testing the molded semiconductor circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110461821.5A CN113113401A (en) | 2021-04-27 | 2021-04-27 | Semiconductor circuit and method for manufacturing semiconductor circuit |
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| CN202110461821.5A CN113113401A (en) | 2021-04-27 | 2021-04-27 | Semiconductor circuit and method for manufacturing semiconductor circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114083905A (en) * | 2021-12-06 | 2022-02-25 | 湖南凯通电子有限公司 | Thermal circuit for thermal printing hair |
| CN117199021A (en) * | 2023-08-17 | 2023-12-08 | 先之科半导体科技(东莞)有限公司 | High gate breakdown voltage field effect transistor |
-
2021
- 2021-04-27 CN CN202110461821.5A patent/CN113113401A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114083905A (en) * | 2021-12-06 | 2022-02-25 | 湖南凯通电子有限公司 | Thermal circuit for thermal printing hair |
| CN117199021A (en) * | 2023-08-17 | 2023-12-08 | 先之科半导体科技(东莞)有限公司 | High gate breakdown voltage field effect transistor |
| CN117199021B (en) * | 2023-08-17 | 2024-04-30 | 先之科半导体科技(东莞)有限公司 | High gate breakdown voltage field effect transistor |
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