JP4403166B2 - Power module and power converter - Google Patents

Power module and power converter Download PDF

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JP4403166B2
JP4403166B2 JP2006299816A JP2006299816A JP4403166B2 JP 4403166 B2 JP4403166 B2 JP 4403166B2 JP 2006299816 A JP2006299816 A JP 2006299816A JP 2006299816 A JP2006299816 A JP 2006299816A JP 4403166 B2 JP4403166 B2 JP 4403166B2
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power module
conductor member
cooling
external
terminal
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JP2007043204A (en
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一二 山田
敏夫 小川
典孝 神村
卓義 中村
光幸 本部
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Hitachi Ltd
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Hitachi Ltd
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    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
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Abstract

<P>PROBLEM TO BE SOLVED: To further improve the reliability of a power module. <P>SOLUTION: In the power module, active elements 13 and 14 are sealed with a resin 2, which are soldered to an electrode 8 on one side of a ceramic substrate 8. A conductive film 11 is formed on the other side of the ceramic substrate 8, and the resin 2 is made to extend to the peripheral portion of the film. <P>COPYRIGHT: (C)2007,JPO&amp;INPIT

Description

本発明は、樹脂封止型パッケージに係り、特に、樹脂封止された素子の温度上昇防止に効果的なモジュール構造に関する。   The present invention relates to a resin-sealed package, and more particularly to a module structure that is effective in preventing temperature rise of a resin-sealed element.

電気自動車、工作機械、搬送装置、空調設備、家電機器等、各種装置の駆動源に、通常、モータが用いられている。これらのモータは、直流および交流の別を問わず、インバータによって制御されていることが多い。このようなインバータの主回路には、ＩＧＢＴ(Insulated Gate Bipolar Transistor)モジュール、ＭＯＳ(Metal Oxide Semiconductor)トランジスタモジュール等のパワーモジュールが用いられている。このようなパワーモジュールの飽和熱抵抗を低減する技術として、特開平５−６７６９７号公報記載の技術が知られている。この技術によれば、図２１に示すように、熱伝導性に優れたＡｌＮ基板１１３とチップ１１２とをリードフレーム１１１を介して密着させ、そのＡｌＮ基板１１３の裏面(チップ等の搭載面と反対側の面)が露出するようにチップ周辺を樹脂１１４でモールドする。このような構造とすることによって、パワーモジュールの飽和熱抵抗の低減が図られている。   Generally, a motor is used as a drive source for various devices such as an electric vehicle, a machine tool, a transfer device, an air conditioner, and home appliances. These motors are often controlled by inverters regardless of whether they are direct current or alternating current. A power module such as an IGBT (Insulated Gate Bipolar Transistor) module or a MOS (Metal Oxide Semiconductor) transistor module is used for the main circuit of such an inverter. As a technique for reducing the saturation thermal resistance of such a power module, a technique described in JP-A-5-67697 is known. According to this technique, as shown in FIG. 21, an AlN substrate 113 excellent in thermal conductivity and a chip 112 are brought into close contact with each other via a lead frame 111, and the back surface of the AlN substrate 113 (opposite to the mounting surface of the chip or the like). The periphery of the chip is molded with resin 114 so that the side surface is exposed. By adopting such a structure, the saturation thermal resistance of the power module is reduced.

ところで、インバータの信頼性の観点からは、それに用いられるパワーモジュールの熱抵抗を低減する他、さらに、封止樹脂による素子保護の信頼性を向上させること等も望まれる。   By the way, from the viewpoint of the reliability of the inverter, besides reducing the thermal resistance of the power module used therefor, it is also desired to improve the reliability of element protection by the sealing resin.

そこで、本発明は、パワーモジュールの信頼性をさらに向上することを目的のひとつとする。   Accordingly, an object of the present invention is to further improve the reliability of the power module.

上記課題を解決するため、本発明の一態様では、
セラミック基板の一方の面の電極にはんだ付けされた１以上の能動素子が樹脂で封止されたパワーモジュールにおいて、セラミック基板の他方の面に導体膜を形成し、この導体膜が形成された基板面の周縁部が、能動素子の封止樹脂で覆われるようにした。 In order to solve the above problems, in one embodiment of the present invention,
In a power module in which one or more active elements soldered to electrodes on one surface of a ceramic substrate are sealed with a resin, a conductor film is formed on the other surface of the ceramic substrate, and the substrate on which the conductor film is formed The peripheral part of the surface was covered with the sealing resin of the active element.

本発明によれば、パワーモジュールの信頼性をより向上させることができる。   According to the present invention, the reliability of the power module can be further improved.

以下、添付図面を参照しながら、本発明に係る実施の形態について説明する。   Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

まず、図１および図２により、本実施の形態に係るパワーモジュールの構成について説明する。なお、ここでは、パワー素子としてＩＧＢＴおよびフリーホイールダイオードを用いることとする。   First, the configuration of the power module according to the present embodiment will be described with reference to FIGS. 1 and 2. Here, IGBTs and free wheel diodes are used as power elements.

本実施の形態に係るパワーモジュール１は、図１(ｂ)に示すように、(１)熱伝導性に優れたＡｌＮ等のセラミック基板７、(２)セラミック基板７の一方の面(表面と呼ぶ)に、チタン含有の銀ろうまたは酸素を介した化学的結合によって接着された導体パターン８,９,１０(コレクタ電極８、エミッタ電極９、ゲート電極１０)、(３)セラミック基板７の他方の面(裏面と呼ぶ)内の、周縁部を除く領域全体に、チタン含有の銀ろうまたは酸素を介した化学的結合によって接着された導体膜１１、(４)端子取付け穴３ａ,４ａ,５ａが形成された一端部(接続端部と呼ぶ)がセラミック基板７の一辺側から突出するように、他端部(固定端部と呼ぶ)が各電極パターン８,９,１０にはんだ付けされた外部端子３,４,５(外部コレクタ端子３、外部エミッタ端子４、外部ゲート端子５)、(５)コレクタ電極８にはんだ１２で接合されたＩＧＢＴ１３およびフリーホイールダイオード１４、(６)フリーホイールダイオード１４がＩＧＢＴ１３に並列接続されるように(図２参照)、各パワー素子１３,１４をエミッタ電極９またはゲート電極１０に電気的に接続したボンディングワイヤ１６、(７)セラミック基板７の表面側を外部環境から保護するための封止樹脂２、を有している。さらに、トランスファー成形中に金型にセラミック基板７を均一に押し付けるために利用した、外部端子３,４,５と反対向きの補助端子１５を備えることもある。   As shown in FIG. 1B, the power module 1 according to the present embodiment includes (1) a ceramic substrate 7 such as AlN having excellent thermal conductivity, and (2) one surface (the surface and the surface) of the ceramic substrate 7. The conductive patterns 8, 9, 10 (collector electrode 8, emitter electrode 9, gate electrode 10) bonded by chemical bonding via titanium-containing silver solder or oxygen, and (3) the other of the ceramic substrate 7. (4) Terminal mounting holes 3a, 4a, 5a, which are bonded to the entire region of the surface (referred to as the back surface) of the metal layer by chemical bonding via titanium-containing silver solder or oxygen. The other end portion (referred to as a fixed end portion) is soldered to each electrode pattern 8, 9, 10 so that one end portion (referred to as a connection end portion) formed with a protrusion protrudes from one side of the ceramic substrate 7. External terminals 3, 4, 5 (external collector terminal 3, external emitter terminal 4, external Gate terminals 5), (5) IGBTs 13 and free wheel diodes 14 joined to the collector electrodes 8 with solder 12, and (6) Power elements so that the free wheel diodes 14 are connected in parallel to the IGBTs 13 (see FIG. 2). And a bonding wire 16 electrically connected to the emitter electrode 9 or the gate electrode 10, and (7) a sealing resin 2 for protecting the surface side of the ceramic substrate 7 from the external environment. Furthermore, an auxiliary terminal 15 opposite to the external terminals 3, 4, 5 may be provided, which is used to uniformly press the ceramic substrate 7 against the mold during transfer molding.

さて、セラミック基板７の表面側を外部環境から保護するための封止樹脂２は、図１(ｃ)に示すように、パワー素子１３,１４、ボンディングワイヤ１６、各電極８,９,１０および外部端子３,４,５の固定端部の周辺に充填されている。さらに、この封止樹脂２は、セラミック基板７の裏面側にまわり込み、セラミック基板７の裏面側の導体膜１１の周縁部にまで及んでいる。このように、セラミック基板７の裏面側の周縁部まで封止樹脂２の端部２ａで覆うことによって、セラミック基板７と封止樹脂２との接着力が強くなるため、封止樹脂２による素子保護の信頼性を向上させることができる。また、脆性材料であるセラミック基板２の縁が封止樹脂２によって機械的衝撃から保護されるため、パワー素子１３,１４だけでなく、セラミック基板７の保護の信頼性も向上する。   Now, as shown in FIG. 1 (c), the sealing resin 2 for protecting the surface side of the ceramic substrate 7 from the external environment includes power elements 13, 14, bonding wires 16, electrodes 8, 9, 10 and The periphery of the fixed ends of the external terminals 3, 4, 5 is filled. Further, the sealing resin 2 wraps around the back surface side of the ceramic substrate 7 and reaches the periphery of the conductor film 11 on the back surface side of the ceramic substrate 7. Thus, since the adhesive force between the ceramic substrate 7 and the sealing resin 2 is increased by covering the peripheral edge of the back surface side of the ceramic substrate 7 with the end 2a of the sealing resin 2, the element made of the sealing resin 2 The reliability of protection can be improved. Further, since the edge of the ceramic substrate 2 which is a brittle material is protected from mechanical shock by the sealing resin 2, not only the power elements 13 and 14 but also the reliability of protection of the ceramic substrate 7 is improved.

ここで、セラミック基板７の裏面に密着した導体膜１１は、図１(ａ)に示すように、周縁部以外の領域１１ａだけが封止樹脂２から外部に露出させている。このようにしているのは、この露出領域１１ａを外部冷却体とのはんだ付け面として利用可能とするためである。また、このように利用される導体膜１１がセラミック基板２の裏面に密着していることは、セラミック基板２の表面側における異種材料の密着(電極８,９,１０とセラミック基板２との密着、コレクタ電極８とパワー素子１３,１４との密着等)による熱応力の発生防止につながる。したがって、パワーモジュール１の変形が防止される。   Here, as shown in FIG. 1A, only the region 11 a other than the peripheral portion of the conductor film 11 in close contact with the back surface of the ceramic substrate 7 is exposed to the outside from the sealing resin 2. This is because the exposed region 11a can be used as a soldering surface with the external cooling body. Further, the conductor film 11 used in this way is in close contact with the back surface of the ceramic substrate 2 because the dissimilar materials are in close contact with the front surface side of the ceramic substrate 2 (the close contact between the electrodes 8, 9, 10 and the ceramic substrate 2). , The contact between the collector electrode 8 and the power elements 13 and 14) is prevented. Therefore, deformation of the power module 1 is prevented.

このように、本実施の形態に係る構造によれば、パワー素子１３,１４からの熱がセラミック基板７を介して効果的に放出することができる上に、封止樹脂２による素子保護および基板保護の信頼性向上と、パワーモジュール１の変形防止とを図ることができる。したがって、パワーモジュール１の信頼性が一層向上する。   Thus, according to the structure according to the present embodiment, the heat from the power elements 13 and 14 can be effectively released through the ceramic substrate 7, and the element protection and the substrate by the sealing resin 2 can be performed. Improvement in the reliability of protection and prevention of deformation of the power module 1 can be achieved. Therefore, the reliability of the power module 1 is further improved.

なお、ここでは、セラミックス基板の例としてＡｌＮ基板を挙げたが、アルミナ、ＳｉＮ等を基板材料とする他のセラミックス基板を用いてもよい。また、以上においては、パワー素子としてＩＧＢＴおよびフリーホイールダイオードを用いたが、それらに代えて、ＭＯＳおよびパワートランジスタを用いてもよい。   Here, although an AlN substrate is mentioned as an example of the ceramic substrate, other ceramic substrates using alumina, SiN, or the like as a substrate material may be used. In the above description, IGBTs and freewheeling diodes are used as power elements, but MOSs and power transistors may be used instead.

つぎに、図３により、図１のパワーモジュールを製造する方法について説明する。ただし、ここで用いるセラミック基板７には、予め、ＮｉメッキされたＣｕまたはＡｌ等によって、コレクタ電極８、エミッタ電極９、ゲート電極１０、導体膜１１等が形成されたＡｌＮ−ＤＢＣ(direct bonded Copper)を用いることとする。   Next, a method for manufacturing the power module of FIG. 1 will be described with reference to FIG. However, the ceramic substrate 7 used here is an AlN-DBC (direct bonded copper) on which a collector electrode 8, an emitter electrode 9, a gate electrode 10, a conductor film 11 and the like are previously formed by Cu or Al plated with Ni. ).

まず、図３(ａ)に示すように、コレクタ電極８にＩＧＢＴ１３およびフリーホイールダイオード１４をはんだで接合する。さらに、コレクタ電極８、エミッタ電極９およびゲート電極１０に、それぞれ、リードフレーム１９に設けられた所定のリードをはんだで接合する。ここで各電極８,９,１０にはんだ付けされたリードは、上述の各外部端子３,４,５となるリードである。なお、トランスファー成形加工中に用いる補助端子１５をセラミック基板７に設ける場合には、補助端子となるべきリードもリードフレーム１９に形成しておき、そのリードを、セラミック基板７の表面の所定の箇所(外部端子３,４,５が形成された縁部に対向する縁部)に形成された導体パターンにはんだ付けすればよい。   First, as shown in FIG. 3A, the IGBT 13 and the free wheel diode 14 are joined to the collector electrode 8 with solder. Further, predetermined leads provided on the lead frame 19 are joined to the collector electrode 8, the emitter electrode 9 and the gate electrode 10 with solder. Here, the leads soldered to the electrodes 8, 9, 10 are leads to be the external terminals 3, 4, 5 described above. When the auxiliary terminal 15 used during the transfer molding process is provided on the ceramic substrate 7, a lead to be the auxiliary terminal is also formed on the lead frame 19, and the lead is provided at a predetermined location on the surface of the ceramic substrate 7. What is necessary is just to solder to the conductor pattern formed in (the edge part which opposes the edge part in which the external terminals 3, 4, and 5 were formed).

その後、図３(ｂ)に示すように、ワイヤボンディングにより、フリーホイールダイオード１４上の電極パッドおよびＩＧＢＴ１３上の電極パッドと、エミッタ電極９またはゲート電極１０とをＡｌワイヤ１６で電気的に接続する。これにより、図２に示したような等価回路が実現される。   Thereafter, as shown in FIG. 3B, the electrode pad on the freewheel diode 14 and the electrode pad on the IGBT 13 and the emitter electrode 9 or the gate electrode 10 are electrically connected by the Al wire 16 by wire bonding. . Thereby, an equivalent circuit as shown in FIG. 2 is realized.

ワイヤボンディングが終了したら、図３(ｃ)に示すように、金型のキャビティ２３にセラミック基板７を収容する。このとき、上金型２０のパーティング面と下金型２１のパーティング面とにリードフレーム１９の各リードがしっかりと挟み込まれるため、セラミック基板７が、金型のキャビティ２３内の適正な位置に位置付けられる。金型のキャビティ２３内でセラミック基板７が適正な位置に位置付けられると、セラミック基板７の裏面の導体膜１１の、周縁部を除く領域(露出領域１１ａとなるべき領域)が金型内壁に密着する。これにより、導体膜１１の露出領域１１ａへの樹脂の周り込みが防止される。   When the wire bonding is completed, the ceramic substrate 7 is accommodated in the cavity 23 of the mold as shown in FIG. At this time, each lead of the lead frame 19 is firmly sandwiched between the parting surface of the upper mold 20 and the parting surface of the lower mold 21, so that the ceramic substrate 7 is positioned at an appropriate position in the cavity 23 of the mold. Positioned on. When the ceramic substrate 7 is positioned at an appropriate position in the cavity 23 of the mold, the region of the conductor film 11 on the back surface of the ceramic substrate 7 excluding the peripheral portion (the region to be the exposed region 11a) is in close contact with the inner wall of the mold. To do. This prevents the resin from entering the exposed region 11 a of the conductor film 11.

このような状態となったら、ゲート２２から樹脂を注入し、キャビティ２３内に樹脂を充填させる。ここで用いる樹脂は、熱硬化性であると、熱可塑性であるとを問わない。そして、金型のキャビティ２３内の樹脂を硬化させてから金型を開き、一方の型にだきついた成形体を突き出す。これにより、図３(ｄ)に示すように、セラミック基板７の表面側が樹脂２で封止された成形体が取り出される。その後、リードフレーム１９のフレーム部を切断することによって、成形体から不要部分を取り除く。これにより、図３(ｅ)に示すようなパワーモジュール１が完成する。   In such a state, a resin is injected from the gate 22 to fill the cavity 23 with the resin. The resin used here does not matter whether it is thermosetting or thermoplastic. And after hardening the resin in the cavity 23 of a metal mold | die, a metal mold | die is opened and the molded object sticking to one type | mold is protruded. Thereby, as shown in FIG.3 (d), the molded object by which the surface side of the ceramic substrate 7 was sealed with the resin 2 is taken out. Thereafter, the unnecessary portion is removed from the molded body by cutting the frame portion of the lead frame 19. Thereby, the power module 1 as shown in FIG.3 (e) is completed.

ここでは、パワーモジュール１を１つだけ製造しているが、図４(ａ)に示すように、各外部電極３,４,５および補助電極１５となるリードが複数組形成されたリードフレーム１９を用いることによって、一回のはんだ付け工程で、複数(ここでは一例として３個)のパワー素子搭載済みセラミック基板７をリードフレーム１９の各組のリードに一括してはんだ付けし、一回のトランスファー成形工程で、リードフレーム１９で連結された複数のセラミック基板７を一括して樹脂封止するようにしてもよい。もちろん、これにより形成される複数の封止樹脂２からは、それぞれ、図４(ｂ)に示すように、それに内包されたセラミック基板７の裏面側の導体膜１１の、周縁部を除く領域１１ａが露出する。   Here, only one power module 1 is manufactured, but as shown in FIG. 4A, a lead frame 19 in which a plurality of leads to be the external electrodes 3, 4, 5 and the auxiliary electrode 15 are formed. Is used to solder a plurality of (three as an example here) power element-mounted ceramic substrates 7 to the respective leads of the lead frame 19 in a single soldering step. In the transfer molding process, a plurality of ceramic substrates 7 connected by the lead frame 19 may be collectively sealed with resin. Of course, from the plurality of sealing resins 2 formed thereby, as shown in FIG. 4B, regions 11a excluding the peripheral portion of the conductor film 11 on the back surface side of the ceramic substrate 7 included therein, respectively. Is exposed.

ところで、以上説明したのは、本実施の形態に係るパワーモジュール１の一構成例に過ぎない。実用に際しては、各種の変更を加えることができる。以下、そのような変更の具体例をいくつか挙げておく。なお、ここで挙げる各変更例に係る構成は、説明の便宜上、別々のパワーモジュール１に適用しているが、必要に応じて適宜に組み合わせて１つのパワーモジュール１に適用することもできる。   By the way, what was demonstrated above is only one structural example of the power module 1 which concerns on this Embodiment. Various changes can be made in practical use. Below are some specific examples of such changes. In addition, although the structure which concerns on each modification given here is applied to the separate power module 1 for convenience of explanation, it can also be applied to one power module 1 combining suitably as needed.

(Ａ)変更例１
図１に示した構成においては、セラミック基板７の表面上の各電極８,９,１０に外部端子３,４,５をそれぞれはんだ付けしているが、必ずしも、このようにする必要はない。例えば、図５(ａ)に示すように、セラミック基板７の表面上の各電極８,９,１０の端部を延長し、セラミック基板７から突き出した部分８ａ,９ａ,１０ａを外部端子３,４,５として利用してもよい。このことは、補助端子１５についても同様である。 (A) Modification 1
In the configuration shown in FIG. 1, the external terminals 3, 4, and 5 are soldered to the electrodes 8, 9, and 10 on the surface of the ceramic substrate 7, but it is not always necessary to do so. For example, as shown in FIG. 5A, the ends of the electrodes 8, 9, 10 on the surface of the ceramic substrate 7 are extended, and the portions 8a, 9a, 10a protruding from the ceramic substrate 7 are connected to the external terminals 3, It may be used as 4,5. The same applies to the auxiliary terminal 15.

このように、セラミック基板７の表面上の各電極と外部端子とを一体物とすることによって、図５(ｂ)に示すように、セラミック基板７の表面上の各電極と外部端子との間にはんだ接合部が存在しなくなる。したがって、セラミック基板７の表面上の各電極と外部端子とを別体とした場合(図１参照)と比較して、はんだ接合部の数を減らすことができる。このため、パワーモジュール１の信頼性が向上する。また、はんだ付け工程を減らすことができるため、製造工程の簡略化が図られる。   In this way, by integrating each electrode on the surface of the ceramic substrate 7 and the external terminal, as shown in FIG. 5B, between each electrode on the surface of the ceramic substrate 7 and the external terminal. No solder joints exist. Therefore, the number of solder joints can be reduced as compared with the case where each electrode on the surface of the ceramic substrate 7 and the external terminal are separated (see FIG. 1). For this reason, the reliability of the power module 1 is improved. Moreover, since the soldering process can be reduced, the manufacturing process can be simplified.

(Ｂ)変更例２
外部エミッタ端子４および外部ゲート端子５は、発熱体であるパワー素子１３,１４と直接接触していないため、パワー素子１３,１４からの熱を外部に放出するためのセラミック基板７に接触している必要性は少ない。したがって、外部エミッタ端子４および外部ゲート端子５のうち、少なくとも一方を、セラミック基板７の表面から離れた位置に配置しても、パワーモジュール１の飽和熱抵抗はほとんど変化しない。具体例として、図６(ｂ)に、セラミック基板７の表面から離れた位置に外部エミッタ端子４および外部ゲート端子５を配置した構成を示す。この場合、セラミック基板７の表面に接触しているのは外部コレクタ端子(またはコレクタ電極)だけである。このような立体的な配置を採用すれば、図６(ａ)に示すように、エミッタ電極およびゲート電極が不要となるため、すべての外部端子をセラミック基板上の電極に接触させる場合(図１、図５等参照)よりも、セラミック基板７の表面の面積が小さくて足りる。このため、高価なセラミック基板７のサイズを小さくすることができ、生産コストを抑制することができる。ただし、図６(ｃ)に示すように、セラミック基板７のサイズが小さい分、導体膜１１の露出領域１１ａも狭くなる。このようなことは、外部エミッタ端子４および外部ゲート端子５の一方をセラミック基板７の表面から離れた位置に配置した場合についても同様である。 (B) Modification 2
Since the external emitter terminal 4 and the external gate terminal 5 are not in direct contact with the power elements 13 and 14 which are heating elements, they are in contact with the ceramic substrate 7 for releasing heat from the power elements 13 and 14 to the outside. There is little need to be. Therefore, even if at least one of the external emitter terminal 4 and the external gate terminal 5 is arranged at a position away from the surface of the ceramic substrate 7, the saturation thermal resistance of the power module 1 hardly changes. As a specific example, FIG. 6B shows a configuration in which the external emitter terminal 4 and the external gate terminal 5 are arranged at positions away from the surface of the ceramic substrate 7. In this case, only the external collector terminal (or collector electrode) is in contact with the surface of the ceramic substrate 7. If such a three-dimensional arrangement is adopted, the emitter electrode and the gate electrode are not required as shown in FIG. 6A. Therefore, when all the external terminals are brought into contact with the electrodes on the ceramic substrate (FIG. 1). The area of the surface of the ceramic substrate 7 is sufficient as compared with FIG. For this reason, the size of the expensive ceramic substrate 7 can be reduced, and the production cost can be suppressed. However, as shown in FIG. 6C, the exposed region 11a of the conductor film 11 is also narrowed because the size of the ceramic substrate 7 is small. The same applies to the case where one of the external emitter terminal 4 and the external gate terminal 5 is arranged at a position away from the surface of the ceramic substrate 7.

そして、セラミック基板７の表面から外部エミッタ端子４を浮かせた場合には、図７(ａ)(ｂ)に示すように、各パワーモジュール１３,１４の上面の電極パッドまで外部エミッタ端子４を導き、それらを、ボンディングワイヤ１６に代えてはんだ５９で直接接合するようにしてもよい。これにより、各パワーモジュール１３,１４と外部エミッタ端子４との間のボンディングワイヤが不要となるため、その分のインダクタンスを削減することができる。同様に、セラミック基板７の表面から外部ゲート端子５を浮かせている場合には、ＩＧＢＴ１３の上面の電極パッドまで外部ゲート電極５を導き、それらを、ボンディングワイヤ１６に代えてはんだで直接接合するようにしてもよい。これにより、ＩＧＢＴ１３と外部ゲート端子５との間のボンディングワイヤが不要となるため、その分のインダクタンスを削減することができる。   When the external emitter terminal 4 is floated from the surface of the ceramic substrate 7, the external emitter terminal 4 is led to the electrode pads on the upper surfaces of the power modules 13 and 14, as shown in FIGS. They may be joined directly with solder 59 instead of the bonding wires 16. Thereby, since the bonding wire between each power module 13 and 14 and the external emitter terminal 4 becomes unnecessary, the inductance can be reduced by that amount. Similarly, when the external gate terminal 5 is floated from the surface of the ceramic substrate 7, the external gate electrode 5 is led to the electrode pad on the upper surface of the IGBT 13, and they are directly joined by solder instead of the bonding wire 16. It may be. Thereby, since the bonding wire between IGBT13 and the external gate terminal 5 becomes unnecessary, the inductance can be reduced by that amount.

(Ｃ)変更例３
一般に、外部エミッタ端子４と外部ゲート端子５との間には、急激に変化する大電流が流れる。このため、外部ゲート端子５および外部エミッタ端子４の抵抗またはインダクタンスによって、ＩＧＢＴ１３のエミッタ−ゲート間の電圧が変動する。このような現象を防止するには、図８(ａ)に示すように、外部コレクタ端子５の幅を実用上問題の生じない程度に細くした上で、外部エミッタ端子４の根元付近(すなわち、できるだけＩＧＢ１３に近い位置)から、本体部側より細い補助エミッタ電極４'を分岐させればよい。または、外部エミッタ端子４より細い端子をエミッタ電極９に別途はんだ付けすることによって補助エミッタ端子を作成してもよい。 (C) Modification 3
In general, a rapidly changing large current flows between the external emitter terminal 4 and the external gate terminal 5. For this reason, the voltage between the emitter and gate of the IGBT 13 varies depending on the resistance or inductance of the external gate terminal 5 and the external emitter terminal 4. In order to prevent such a phenomenon, as shown in FIG. 8A, the width of the external collector terminal 5 is narrowed to such an extent that no practical problem occurs, and the vicinity of the base of the external emitter terminal 4 (that is, The auxiliary emitter electrode 4 ′ that is thinner than the main body side may be branched from a position as close to the IGB 13 as possible. Alternatively, the auxiliary emitter terminal may be created by soldering a terminal thinner than the external emitter terminal 4 to the emitter electrode 9 separately.

このような補助エミッタ電極４'は、ＩＧＢＴ１３のエミッタ−ゲート間の電圧をほぼ変動なく取り出し、それを外部制御回路に供給することができる。このため、ＩＧＢＴ１３のエミッタ−ゲート間に安定な電圧を供給する制御を行うことができる。   Such an auxiliary emitter electrode 4 'can take out the voltage between the emitter and gate of the IGBT 13 almost without fluctuation and supply it to an external control circuit. For this reason, control which supplies a stable voltage between the emitter-gate of IGBT13 can be performed.

前述したように、この変更例に係る構成は、上述または後述のいずれの変更例に係る構成と組み合わせることができる。したがって、この変更例に係る構成は、上述の変更例２に係る構成にも当然適用することもできる。例えば、図９(ａ)(ｂ)に示すように、外部エミッタ端子４を各パワー素子１３,１４に直説はんだ付けした構成に適用する場合には、補助エミッタ電極４'を、外部エミッタ端子４の根元付近ではなく、ＩＧＢＴ１３とのはんだ接合部５９付近から分岐させればよいすればよい。   As described above, the configuration according to this modification example can be combined with the configuration according to any of the modification examples described above or below. Therefore, the configuration according to the modification example can also be applied to the configuration according to the modification example 2 described above. For example, as shown in FIGS. 9A and 9B, when the external emitter terminal 4 is applied to a configuration in which the external emitter terminal 4 is directly soldered to the power elements 13 and 14, the auxiliary emitter electrode 4 ′ is connected to the external emitter terminal. What is necessary is just to make it branch from the solder joint part 59 vicinity with IGBT13 instead of the root vicinity of 4. FIG.

なお、図８および図９においては、補助エミッタ電極４'および外部コレクタ電極５を、外部エミッタ電極４よりも長くしているが、各電極４',４,５の長さは、パワーモジュールの実相形態に応じて適宜に定めばよい。   In FIGS. 8 and 9, the auxiliary emitter electrode 4 ′ and the external collector electrode 5 are longer than the external emitter electrode 4, but the length of each electrode 4 ′, 4, 5 is the same as that of the power module. What is necessary is just to determine suitably according to a real phase form.

(Ｄ)変更例４
３つの外部端子が、外部コレクタ端子３、外部エミッタ端子４、外部ゲート端子５の順番で一列に並んでいる場合には、外部コレクタ端子３と外部エミッタ端子４との間に、パワーモジュール１の最大電圧がかかる。このため、外部コレクタ端子３と外部エミッタ端子４との間には、空間放電等が生じない十分な間隔が設けられている必要があり、このことが、パワーモジュール１の小型化の妨げになっていた。３つの外部端子が、外部コレクタ端子３、外部エミッタ端子４、外部ゲート端子５の順番で一列に並んでいる場合に、外部コレクタ端子３と外部エミッタ端子４との間の空間放電等を防止しつつ、パワーモジュール１の小型化を図るには、図３４(ａ)(ｂ)(ｃ)に示すように、外部コレクタ端子３と外部エミッタ端子４との間を仕切る凸部３０を封止樹脂２と一体成形することが有効である。この凸部３０が遮蔽板として機能するからである。同様な凸部は、外部エミッタ端子４と外部ゲート端子５との間に介在させておいてもよい。しかし、外部エミッタ端子４と外部ゲート端子５との間に印加される電圧(ＩＧＢＴ１３への入力信号)は、通常、１５Ｖ以下であるため、外部エミッタ端子４と外部ゲート端子５との間の間隔がパワーモジュール１の小型化の妨げになるとは考えにくい。したがって、外部エミッタ端子４と外部ゲート端子５との間に遮蔽板を介在させる必要性は乏しい。 (D) Modification 4
When the three external terminals are arranged in a line in the order of the external collector terminal 3, the external emitter terminal 4, and the external gate terminal 5, the power module 1 is connected between the external collector terminal 3 and the external emitter terminal 4. Maximum voltage is applied. For this reason, it is necessary to provide a sufficient space between the external collector terminal 3 and the external emitter terminal 4 so that no spatial discharge or the like occurs, which hinders the miniaturization of the power module 1. It was. When the three external terminals are arranged in a line in the order of the external collector terminal 3, the external emitter terminal 4, and the external gate terminal 5, a space discharge between the external collector terminal 3 and the external emitter terminal 4 is prevented. On the other hand, in order to reduce the size of the power module 1, as shown in FIGS. 34 (a), (b), and (c), the convex portions 30 that partition the external collector terminal 3 and the external emitter terminal 4 are sealed with resin. It is effective to integrally mold with 2. This is because the convex portion 30 functions as a shielding plate. A similar convex portion may be interposed between the external emitter terminal 4 and the external gate terminal 5. However, since the voltage (input signal to the IGBT 13) applied between the external emitter terminal 4 and the external gate terminal 5 is usually 15 V or less, the distance between the external emitter terminal 4 and the external gate terminal 5 However, it is unlikely that this will hinder the miniaturization of the power module 1. Therefore, there is little need to interpose a shielding plate between the external emitter terminal 4 and the external gate terminal 5.

また、３つの外部端子が、外部コレクタ端子３、外部ゲート端子５、外部エミッタ端子４の順番で一列に並んでいる場合には、外部コレクタ端子３と外部ゲート端子５との間に、パワーモジュール１の最大電圧がかかるため、外部コレクタ端子３と外部ゲート端子５との間に介在する遮蔽板３０を封止樹脂２と一体成形すればよい。   When the three external terminals are arranged in a line in the order of the external collector terminal 3, the external gate terminal 5, and the external emitter terminal 4, a power module is provided between the external collector terminal 3 and the external gate terminal 5. Since the maximum voltage of 1 is applied, the shielding plate 30 interposed between the external collector terminal 3 and the external gate terminal 5 may be integrally formed with the sealing resin 2.

なお、３つの外部端子を、外部エミッタ端子４、外部コレクタ端子３、外部ゲート端子５の順に並べると、外部エミッタ端子４と外部コレクタ端子３との間、外部コレクタ端子３と外部ゲート端子５との間に、それぞれ、遮蔽板が必要となる。このため、３つの外部端子は、外部コレクタ端子３、外部エミッタ端子４、外部ゲート端子５の順、または、外部コレクタ端子３、外部ゲート端子５、外部エミッタ端子４の順で並んでいることが望ましい。   If the three external terminals are arranged in the order of the external emitter terminal 4, the external collector terminal 3, and the external gate terminal 5, the external collector terminal 3 and the external gate terminal 5 are connected between the external emitter terminal 4 and the external collector terminal 3. In each case, a shielding plate is required. For this reason, the three external terminals may be arranged in the order of the external collector terminal 3, the external emitter terminal 4, and the external gate terminal 5, or the external collector terminal 3, the external gate terminal 5, and the external emitter terminal 4 in this order. desirable.

(Ｅ)変更例５
以上においては、いずれも、３つの外部端子３,４,５の接続端部を、セラミック基板７の一辺側から突出させているが、必ずしも、このようにする必要はない。３つの外部端子３,４,５の接続端部の向きは、システム実装時における接続構造に応じて適宜に定めばよい。したがって、例えば、図２０(ａ)(ｂ)に示すように、外部コレクタ端子３の接続端部とは逆向きに外部エミッタ端子４の接続端部を突き出させてもよい。この場合、外部エミッタ端子４が補助端子１５としての役割も果たすため、補助端子１５を別途設ける必要はない。 (E) Modification example 5
In the above, the connection end portions of the three external terminals 3, 4, and 5 are protruded from one side of the ceramic substrate 7, but it is not always necessary to do so. The orientations of the connection end portions of the three external terminals 3, 4, and 5 may be appropriately determined according to the connection structure when the system is mounted. Therefore, for example, as shown in FIGS. 20A and 20B, the connection end of the external emitter terminal 4 may protrude in the direction opposite to the connection end of the external collector terminal 3. In this case, since the external emitter terminal 4 also serves as the auxiliary terminal 15, it is not necessary to provide the auxiliary terminal 15 separately.

(Ｆ)変更例６
インバータ等にパワーモジュールを実装する際等には、複数のパワーモジュールが一組として使用される。このような使用形態に対応するため、図１０(ａ)に示すように、一列に並べた複数のセラミック基板７を１つの封止樹脂２で封止するようにしてもよい。このようにするには、図１０(ｃ)に示すように、外部端子３,４,５(ここでは、さらに補助エミッタ端子４'も含めている)となるリードを複数組有するリードフレーム１９に必要数のセラミック基板７をはんだ付けし、それらのセラミック基板７をインサート成形すればよい。この場合には、もちろん、図１０(ｂ)に示すように、複数のセラミック基板７の裏面側の導体膜１１の、周縁部を除く領域１１ａが封止樹脂２から露出することになる。 (F) Modification 6
When a power module is mounted on an inverter or the like, a plurality of power modules are used as a set. In order to cope with such a usage pattern, a plurality of ceramic substrates 7 arranged in a line may be sealed with one sealing resin 2 as shown in FIG. In order to do this, as shown in FIG. 10C, a lead frame 19 having a plurality of sets of leads to be external terminals 3, 4, 5 (here, further including the auxiliary emitter terminal 4 ') is provided. A necessary number of ceramic substrates 7 may be soldered and the ceramic substrates 7 may be insert-molded. In this case, of course, as shown in FIG. 10B, the region 11 a excluding the peripheral portion of the conductor film 11 on the back surface side of the plurality of ceramic substrates 7 is exposed from the sealing resin 2.

このような構造とすることによって、本実施の形態に係るパワーモジュール１の必要数(ここでは一例として３個)分を一体のモジュールとして取り扱うことができる。ただし、図１０(ａ)に示したように、一列に並べた複数のセラミック基板７を１つの封止樹脂２で封止した場合、パワーモジュール単体よりも封止樹脂の幅ｄが大きくなる。このため、熱応力が生じると、パワーモジュール単体よりも大きな反りが封止樹脂に生じる。そこで、モジュール全体としての変形を抑制するため、図１１に示すように、個々のセラミック基板７を封止する個別の封止樹脂２と、それらの間をつなぐ連結部３１とを一体成形するようにしてもよい。なお、各封止樹脂２の間をつなぐ連結部３１の形状と位置と個数とは、適宜に定めれられていればよい。   By adopting such a structure, the necessary number (here, three as an example) of the power modules 1 according to the present embodiment can be handled as an integrated module. However, as shown in FIG. 10A, when a plurality of ceramic substrates 7 arranged in a row are sealed with one sealing resin 2, the width d of the sealing resin is larger than that of the power module alone. For this reason, when thermal stress arises, the curvature larger than a power module single-piece | unit will arise in sealing resin. Therefore, in order to suppress the deformation of the entire module, as shown in FIG. 11, the individual sealing resin 2 that seals the individual ceramic substrates 7 and the connecting portion 31 that connects them are integrally formed. It may be. In addition, the shape, position, and number of the connecting portions 31 that connect the sealing resins 2 may be determined as appropriate.

(Ｇ)変更例７
以上述べたいずれの構成も、パワーモジュール１の片面側に外部冷却体を装着させるものであったが、パワーモジュール１の両面側に外部冷却体を装着させるようにすることもできる。ここでは、図２９に示す等価回路を実現するパワーモジュールを例に挙げて説明する。 (G) Modification example 7
In any of the configurations described above, the external cooling body is mounted on one side of the power module 1. However, the external cooling body can be mounted on both sides of the power module 1. Here, a power module that realizes the equivalent circuit shown in FIG. 29 will be described as an example.

図３０(ａ)(ｂ)に示すように、このパワーモジュールは、対向する２枚のセラミック基板７,７'、各セラミック基板７,７'の対向面(他方のセラミック基板側の面)に形成された電極、各セラミック基板７,７'の外側面(対向面の反対側の面)に形成された導体膜１１,１１'、２枚のセラミック基板７,７'の対向面間に介在するパワー素子１３,１４、２枚のセラミック基板７,７'の対向面側を外部環境から保護するための封止樹脂２、外部端子３,４,５(外部コレクタ端子３,外部エミッタ端子４、外部ゲート端子５)、を有している。   As shown in FIGS. 30 (a) and 30 (b), this power module has two opposing ceramic substrates 7, 7 ′ and opposing surfaces (surfaces on the other ceramic substrate side) of the ceramic substrates 7, 7 ′. The formed electrodes and the conductor films 11 and 11 ′ formed on the outer surface (surface opposite to the facing surface) of each ceramic substrate 7 and 7 ′ are interposed between the facing surfaces of the two ceramic substrates 7 and 7 ′. Power elements 13 and 14, sealing resin 2 for protecting the opposing surface side of the two ceramic substrates 7 and 7 ′ from the external environment, external terminals 3, 4, 5 (external collector terminal 3, external emitter terminal 4 And an external gate terminal 5).

ここで用いているパワー素子１３,１４,１３Ａ,１４Ａは、図３１(ａ)(ｂ)に示すように、上面にもはんだ付け用の電極パッド１３Ｇ,１３Ｋ,１４Ｋが形成されている。具体的には、ＩＧＢＴ１３の上面およびフリーホイールダイオード１４の上面には、周縁のＦＬＲ(フィールド・リミテッド・リング)内側にエミッタ中間電極１３Ｅ,１４Ｋが形成されている。このように、高い電界集中のあるＦＬＲを避けてエミッタ中間電極を配することによって、そのようなＦＬＲからエミッタ電極を遠ざけることができる。このため、電界の乱れが防止され、素子耐圧が保護される。そして、ＩＧＢＴ１３,１３Ａの上面には、さらにゲート中間電極１３Ｇが形成されており、エミッタ中間電極１３Ｅは、このゲート中間電極１３Ｇの形成領域(中央ゲート電極上の領域)にかぶらない形状(ここではコ形状)に成形されている。なお、エミッタ中間電極１３Ｅ,１４Ｋおよびゲート中間電極１３Ｇは、Ｓｉと線膨張係数が近似している材料(タングステンＷ、モリブデンＭｏ等)で形成され、かつ、はんだ付け、低温加圧接合等でシリコンに接合されていることが望ましい。   As shown in FIGS. 31 (a) and 31 (b), the power elements 13, 14, 13A, 14A used here are also provided with soldering electrode pads 13G, 13K, 14K on the upper surface. Specifically, on the upper surface of the IGBT 13 and the upper surface of the free wheel diode 14, emitter intermediate electrodes 13E and 14K are formed inside the peripheral FLR (Field Limited Ring). Thus, by arranging the emitter intermediate electrode while avoiding the FLR having a high electric field concentration, the emitter electrode can be kept away from such FLR. For this reason, disturbance of the electric field is prevented, and the device breakdown voltage is protected. A gate intermediate electrode 13G is further formed on the upper surfaces of the IGBTs 13 and 13A, and the emitter intermediate electrode 13E has a shape that does not cover the region where the gate intermediate electrode 13G is formed (region on the central gate electrode) (here, (C shape). The emitter intermediate electrodes 13E and 14K and the gate intermediate electrode 13G are made of a material (tungsten W, molybdenum Mo, etc.) whose linear expansion coefficient is close to that of Si, and silicon by soldering, low-temperature pressure bonding, or the like. It is desirable that it is joined to.

そして、対向する２枚のセラミック基板７,７'のうち、一方のセラミック基板７'の対向面には、図３２(ａ)に示すように、コレクタ電極８Ａ、ゲート電極１０Ａが形成されている。そして、ゲート電極１０Ａには、外部ゲート電極５が接続されている。また、コレクタ電極８Ａには、ＩＧＢＴ１３Ａおよびフリーホイールダイオード１４Ａが搭載され、かつ、出力端子(Ｕ、Ｖ、Ｗ)および補助エミッタ電極４'が接続されている。なお、このコレクタ電極８Ａは、他方のセラミック基板７に搭載されたＩＧＢＴ１３およびＦＷＤ１４のエミッタ電極としても機能する。   As shown in FIG. 32 (a), a collector electrode 8A and a gate electrode 10A are formed on the facing surface of one of the two ceramic substrates 7, 7 'facing each other. . The external gate electrode 5 is connected to the gate electrode 10A. The collector electrode 8A is mounted with an IGBT 13A and a free wheel diode 14A, and is connected to an output terminal (U, V, W) and an auxiliary emitter electrode 4 ′. The collector electrode 8A also functions as an emitter electrode of the IGBT 13 and FWD 14 mounted on the other ceramic substrate 7.

他方のセラミック基板７の対向面には、図３２(ｂ)に示すように、コレクタ電極８、エミッタ電極９、ゲート電極１０が形成されている。そして、ゲート電極１０には、外部ゲート電極５Ａが接続されている。また、コレクタ電極８には、ＩＧＢＴ１３およびフリーホイールダイオード１４が搭載され、かつ、外部コレクタ端子３が接続されている。さらに、エミッタ電極９には、外部エミッタ電極４Ａおよび補助エミッタ電極４Ａ'が接続されている。   On the opposite surface of the other ceramic substrate 7, a collector electrode 8, an emitter electrode 9, and a gate electrode 10 are formed as shown in FIG. The gate electrode 10 is connected to the external gate electrode 5A. Further, the collector electrode 8 is mounted with an IGBT 13 and a free wheel diode 14 and is connected to an external collector terminal 3. Further, the emitter electrode 9 is connected to an external emitter electrode 4A and an auxiliary emitter electrode 4A ′.

これらのセラミック基板７,７'の対向面同士を対向させると、図３２(ｂ)から判るように、一方のセラミック基板７'のパワー素子１３Ａ,１４Ａの上面が、他方のセラミック基板７のエミッタ電極９と対向し、他方のセラミック基板７のパワー素子１３,１４の上面が、一方のセラミック基板７'のコレクタ電極８Ａと対向する。そこで、これら対向し合ったもの同士を、図３０(ｂ)に示すように、はんだ５９で接合することによって、図２９に示した等価回路を実現している。このような接合構造を採用することにより、一方のセラミック基板７'に搭載されたパワー素子１３Ａ,１４Ａは、自身が搭載されたセラミック基板７'の導体膜１１の露出領域１１ａからだけでなく、はんだ５９を介して、他のセラミック基板７の導体膜１１の露出領域１１ａからも放熱する。他方のセラミック基板７に搭載されたパワー素子１３,１４も、同様に、自身が搭載されたセラミック基板７の導体膜１１の露出領域１１ａからだけでなく、はんだ５９を介して、他のセラミック基板７の導体膜１１の露出領域１１ａからも放熱する。このため、図３３に示すように、パワーモジュールの両側に外部冷却体２３を装着することによって、パワー素子からの熱を効率的に外部に放出することができる。これにより、電気的抵抗および熱抵抗が低減される。   When the facing surfaces of these ceramic substrates 7 and 7 'are made to face each other, as can be seen from FIG. 32 (b), the upper surfaces of the power elements 13A and 14A of one ceramic substrate 7' are the emitters of the other ceramic substrate 7. The upper surface of the power elements 13 and 14 of the other ceramic substrate 7 faces the collector electrode 8A of one ceramic substrate 7 '. Therefore, the equivalent circuit shown in FIG. 29 is realized by joining these facing members together with solder 59 as shown in FIG. 30 (b). By adopting such a joining structure, the power elements 13A and 14A mounted on one ceramic substrate 7 ′ can be used not only from the exposed region 11a of the conductor film 11 of the ceramic substrate 7 ′ on which the power elements 13A and 14A are mounted. Heat is also radiated from the exposed region 11 a of the conductor film 11 of the other ceramic substrate 7 through the solder 59. Similarly, the power elements 13 and 14 mounted on the other ceramic substrate 7 are not only from the exposed region 11a of the conductor film 11 of the ceramic substrate 7 on which they are mounted, but also to other ceramic substrates via the solder 59. The heat is also radiated from the exposed region 11 a of the conductor film 11. For this reason, as shown in FIG. 33, by mounting the external cooling body 23 on both sides of the power module, heat from the power element can be efficiently released to the outside. Thereby, electrical resistance and thermal resistance are reduced.

なお、このような構造を採用する場合には、狭い領域でも充填されやすい熱硬化性樹脂で封止樹脂を形成することが望ましい。２枚のセラミック絶縁基板７,７'の対向面の間隔が１.５ｍｍ程度となるからである。   When such a structure is employed, it is desirable to form the sealing resin with a thermosetting resin that is easily filled even in a narrow region. This is because the distance between the opposing surfaces of the two ceramic insulating substrates 7 and 7 'is about 1.5 mm.

つぎに、本実施の形態に係るパワーモジュール１に適した外部冷却体２３の構造について説明する。   Next, the structure of the external cooling body 23 suitable for the power module 1 according to the present embodiment will be described.

図１２に示すように、外部冷却体２３には、一方の側にストレート型のフィン部２３Ｂが設けられ、その反対側にパワーモジュール装着部２３Ａが設けられている。この外部冷却媒体２３は、Ａｌ、Ｃｕ、Ａｌ−ＳｉＣ複合材料、Ｃｕ−ＣｕＯ複合材料等の、熱伝導性に優れ、かつ、冷媒との接触によって腐食しない材料によって形成されている必要があるが、必ずしも、単一の材料で形成されている必要はない。例えば、フィン部２３Ｂが筐体等に取り付けられる場合には、パワーモジュール装着部２３Ａとフィン部２３Ｂとを異種材料で形成することが望ましい。具体的には、パワーモジュール装着部２３Ａを、セラミック基板と熱膨張係数が近似するＡｌ−ＳｉＣ複合材料で形成し、固定部であるフィン部２３Ｂを、Ａｌ−ＳｉＣ複合材料よりも塑性変形しやすいＡｌで形成することが望ましい。このような構造とすれば、筐体等とパワーモジュール装着部２３Ａとの間に生じる応力がＡｌによって緩和されるからである。   As shown in FIG. 12, the external cooling body 23 is provided with a straight type fin portion 23B on one side and a power module mounting portion 23A on the opposite side. The external cooling medium 23 needs to be formed of a material that is excellent in thermal conductivity and that does not corrode by contact with a refrigerant, such as Al, Cu, Al—SiC composite material, and Cu—CuO composite material. It is not always necessary to be made of a single material. For example, when the fin portion 23B is attached to a housing or the like, it is desirable to form the power module mounting portion 23A and the fin portion 23B with different materials. Specifically, the power module mounting portion 23A is formed of an Al—SiC composite material whose thermal expansion coefficient approximates that of a ceramic substrate, and the fin portion 23B serving as a fixing portion is more easily plastically deformed than the Al—SiC composite material. It is desirable to form with Al. With such a structure, the stress generated between the housing and the power module mounting portion 23A is alleviated by Al.

さて、この外部冷却体２３のパワーモジュール装着部２３Ａには、図１２に示すように、パワーモジュール１の導体膜１１の露出領域１１ａに対向する面(はんだ付け面)を有する凸部２３ａが、３つ以上、一列に並ばないように形成されている。この凸部２３ａは、パワーモジュール１の導体膜１１の露出面１１ａとこれを囲む樹脂端部２ａとによって形成された凹部(図１(ｃ)参照)に、僅かな余裕(余剰はんだの逃げ路になる程度の隙間)をもってはまり込むようになっている。このため、これら凸部２３ａと凹部とのはめ合いによって、簡単に、パワーモジュール１を、外部冷却体２３に対して精度良く位置決めすることができる。なお、外部冷却体２３に対してパワーモジュール１を精度良く位置決めできるということは、同じ外部冷却体２３に取り付けられた他のパワーモジュールとの外部端子接続に有利となる(後述)。   Now, as shown in FIG. 12, the power module mounting portion 23A of the external cooling body 23 has a convex portion 23a having a surface (soldering surface) facing the exposed region 11a of the conductor film 11 of the power module 1. Three or more are formed so as not to line up. The convex portion 23a has a slight margin (excess solder escape path) in a concave portion (see FIG. 1C) formed by the exposed surface 11a of the conductor film 11 of the power module 1 and the resin end portion 2a surrounding the exposed surface 11a. It fits in with a gap of about For this reason, the power module 1 can be easily positioned with high accuracy with respect to the external cooling body 23 by fitting the convex portions 23a and the concave portions. The ability to accurately position the power module 1 with respect to the external cooling body 23 is advantageous for external terminal connection with other power modules attached to the same external cooling body 23 (described later).

外部冷却体２３のパワーモジュール装着部２３Ａに形成された凸部２３ａのはんだ付け面は、平坦であってもよいし、図１３に示すように、適当な高さの突起２３ａ'が１以上形成されていてもよい。ただし、１以上の突起２３ａ'が形成されていると、パワーモジュール１の導体膜１１の露出領域１１ａとパワーモジュール装着部２３Ａの凸部２３ａのはんだ付け面とが、常に、突起２３ａの高さに応じた適当な厚さのはんだ層２５で接合されるため、パワーモジュール１と外部冷却体２３との接合信頼性向上の観点からは有利である。なお、パワーモジュール装着部２３Ａの凸部２３ａの上面に形成する突起２３ａ'の縦横幅(凸部２３ａの接合面と平行な面で切ったときの断面の幅)は、パワーモジュール装着部２３Ａの凸部２３ａの上面の面積等に応じて定めればよい。   The soldering surface of the protrusion 23a formed on the power module mounting portion 23A of the external cooling body 23 may be flat, or as shown in FIG. 13, one or more protrusions 23a ′ having an appropriate height are formed. May be. However, when one or more protrusions 23a ′ are formed, the exposed region 11a of the conductor film 11 of the power module 1 and the soldering surface of the protrusion 23a of the power module mounting portion 23A are always at the height of the protrusion 23a. Therefore, it is advantageous from the viewpoint of improving the bonding reliability between the power module 1 and the external cooling body 23. The vertical and horizontal widths of the protrusions 23a ′ formed on the upper surface of the convex portion 23a of the power module mounting portion 23A (the width of the cross section when cut by a plane parallel to the joint surface of the convex portion 23a) are What is necessary is just to determine according to the area etc. of the upper surface of the convex part 23a.

そして、パワーモジュール１と外部冷却体２３との接合信頼性をさらに向上させる必要がある場合には、図１４に示すように、パワーモジュール１の封止樹脂２と外部冷却体２３との隙間にエポキシ樹脂等の接着剤６４を外部から注入すればよい。このようにすることで、パワーモジュール１の導体膜１１の露出領域１１ａと外部冷却体２３の凸部２３ａの上面との間のはんだ層２５にかかる応力が緩和するため、パワーモジュール１と外部冷却体２３との接合信頼性をさらに向上させることができる。シリコンとの熱膨張係数の差が約３×１０-6〜１８×１０-6(１／℃)のセラミック基板(ＡｌＮ、アルミナ、ＳｉＮ)を用いたパワーモジュールを、図１４に示した接続構造で外部冷却体に接合した場合、２桁以上の接続寿命が得られることが実験により確認されている。 Then, when it is necessary to further improve the bonding reliability between the power module 1 and the external cooling body 23, the gap between the sealing resin 2 of the power module 1 and the external cooling body 23 is shown in FIG. An adhesive 64 such as an epoxy resin may be injected from the outside. By doing so, the stress applied to the solder layer 25 between the exposed region 11a of the conductor film 11 of the power module 1 and the upper surface of the convex portion 23a of the external cooling body 23 is relaxed. The bonding reliability with the body 23 can be further improved. A power module using a ceramic substrate (AlN, alumina, SiN) having a difference in thermal expansion coefficient from silicon of about 3 × 10 −6 to 18 × 10 −6 (1 / ° C.) is shown in FIG. It has been confirmed by experiments that a connection life of two orders of magnitude or more can be obtained when bonded to an external cooling body.

または、パワーモジュール１の封止樹脂２に１以上のハブ付き取付け部を一体成形し、このハブ付き取付け部を外部冷却体２３にネジ止めするようにしてもよい。もちろん、この場合には、ハブ付き取付け部のハブに対応する位置にネジ穴が外部冷却体２３に形成されている必要がある。ここで、封止樹脂２におけるハブ付き取付け部の位置は限定しないが、ハブ付き取付け部を複数設ける場合には、ネジ締結時に封止樹脂２に均等に力がかかる位置関係にハブ付き取付け部を配することが望ましい。例えば、パワーモジュール１の封止樹脂２の外形をほぼ四角形とする場合には、図１５に示すように、パワーモジュール１の封止樹脂２の各コーナにそれぞれハブ付き取付け部２７を一体成形することが望ましい。また、このようなほぼ四角形の封止樹脂２を複数連結する場合には、図１６に示すように、隣り合う封止樹脂２間で、コーナ部のハブ付き取付け部１７を連結部として共有させることもできる。そして、図１５、図１６のいずれに示したパワーモジュール１が取り付けられる外部冷却体２３にも、図１７に示すように、各ハブ付き取付け部２７のハブの穴２７ａに対応付けて、固定ネジ２８が締結されるネジ穴２９が切られている必要がある。   Alternatively, one or more attachment portions with hubs may be integrally formed in the sealing resin 2 of the power module 1 and the attachment portions with hubs may be screwed to the external cooling body 23. Of course, in this case, it is necessary that a screw hole be formed in the external cooling body 23 at a position corresponding to the hub of the mounting portion with the hub. Here, the position of the mounting portion with the hub in the sealing resin 2 is not limited. However, when a plurality of mounting portions with the hub are provided, the mounting portion with the hub has a positional relationship in which force is evenly applied to the sealing resin 2 when the screw is fastened. It is desirable to arrange For example, when the outer shape of the sealing resin 2 of the power module 1 is substantially rectangular, as shown in FIG. 15, a hub-attached mounting portion 27 is integrally formed at each corner of the sealing resin 2 of the power module 1. It is desirable. When a plurality of such substantially rectangular sealing resins 2 are connected, as shown in FIG. 16, the hub-attached mounting portion 17 of the corner portion is shared as a connecting portion between the adjacent sealing resins 2. You can also Further, as shown in FIG. 17, the external cooling body 23 to which the power module 1 shown in either of FIGS. 15 and 16 is attached is associated with the hub hole 27a of each hub-attached portion 27, and fixed screws. The screw hole 29 to which 28 is fastened needs to be cut.

なお、ここで述べたようにパワーモジュール１の封止樹脂２を外部冷却体２３にネジ止めする場合には、このネジによってパワーモジュール１が外部冷却体２３にしっかりと固定されるため、必ずしも、パワーモジュール１の導体膜１１と外部冷却体２３の凸部２３ａとをはんだ付けする必要はない。したがって、はんだ２５に代えて、高熱伝導グリース、高熱伝導シート等を、パワーモジュール１の導体膜１１と外部冷却体２３の凸部２３ａとの間に介在させることによって、パワー素子と外部冷却体２３との間の低熱抵抗化を図るようにしてもよい。   In addition, when the sealing resin 2 of the power module 1 is screwed to the external cooling body 23 as described herein, the power module 1 is firmly fixed to the external cooling body 23 by this screw. It is not necessary to solder the conductor film 11 of the power module 1 and the convex portion 23a of the external cooling body 23. Therefore, instead of the solder 25, a high thermal conductive grease, a high thermal conductive sheet, or the like is interposed between the conductor film 11 of the power module 1 and the convex portion 23 a of the external cooling body 23, so that the power element and the external cooling body 23 are disposed. The thermal resistance between the two may be reduced.

以上においては、本実施の形態に係るパワーモジュール１の外部冷却体として、ストレート型のフィン部２３Ｂを有する外部冷却体２３を例に挙げたが、本実施の形態に係るパワーモジュール１は、ストレート型以外の形状のフィン部を有する外部冷却体への装着、ヒートパイプが内蔵された外部冷却体への装着も可能である。例えば、冷却媒体を通過させる流路が内部に形成されたフィン部２３Ｂを有する外部冷却体に装着する場合には、図２５(ｂ)に示すように、冷却媒体を通過させる流路３７が内部に形成されたフィン部２３Ｂを挟んで両側にパワーモジュール装着部２３Ａを設けてもよい。このような冷却体によれば、片側にだけパワーモジュール装着部を複数有する冷却体と同じだけのパワーモジュールを、より小さなサイズで装着可能とすることができる。このため、システムを小形化できる。同様に、ヒートパイプが内蔵された外部冷却体に装着する場合にも、図２５(ａ)に示すように、ヒートパイプ６５が内蔵された外部冷却体２３の両側にパワーモジュール装着部２３Ａを形成することができる。   In the above, the external cooling body 23 having the straight fin portion 23B is taken as an example of the external cooling body of the power module 1 according to the present embodiment, but the power module 1 according to the present embodiment is Mounting to an external cooling body having a fin portion of a shape other than the mold and mounting to an external cooling body with a built-in heat pipe are also possible. For example, in the case where the cooling medium is passed through an external cooling body having fin portions 23B formed therein, as shown in FIG. A power module mounting portion 23A may be provided on both sides of the fin portion 23B formed on the side. According to such a cooling body, the same power module as the cooling body having a plurality of power module mounting portions only on one side can be mounted in a smaller size. For this reason, the system can be miniaturized. Similarly, when mounting on an external cooling body with a built-in heat pipe, as shown in FIG. 25A, power module mounting portions 23A are formed on both sides of the external cooling body 23 with a built-in heat pipe 65. can do.

つぎに、以上説明したパワーモジュール１が実装されたシステムについて説明する。ここでは、図１８に示す等価回路を実現するインバータモジュールを有する３相インバータを例として挙げる。   Next, a system in which the power module 1 described above is mounted will be described. Here, a three-phase inverter having an inverter module that realizes the equivalent circuit shown in FIG. 18 is taken as an example.

本実施の形態に係るインバータは、図１９(ｂ)に示すように、インバータモジュール、インバータモジュールに取り付けられたケース６０、ケース６０の上面に取り付けられたプリント配線板５４、プリント配線板５４に搭載された制御用マイコンその他の表面実装部品５７,５８、を有している。   As shown in FIG. 19B, the inverter according to the present embodiment is mounted on an inverter module, a case 60 attached to the inverter module, a printed wiring board 54 attached to the upper surface of the case 60, and the printed wiring board 54. The control microcomputer and other surface mount components 57 and 58 are provided.

インバータモジュールは、図１９(ａ)に示すように、外部冷却体２３、制御用マイコンに外部ゲート電極５が接続された６個のパワーモジュール１、モータ等の負荷が接続される３つの出力端子Ｕ,Ｖ,Ｗ、電源に接続される２つの電源端子Ｐ,Ｎを有している。外部冷却体２３は、ケース６０内側において３つずつ２列に並んだ６個のパワーモジュール装着部２３Ａ、パワーモジュール装着部２３Ａの列に沿った流体路２３ｂで供給口６２から排出口６３へ冷媒を導く２列のフィン部２３Ｂを有している。６個のパワーモジュール１は、２列のパワーモジュール装着部２３Ａのうちのいずれかパワーモジュール装着部２３Ａの凸部２３ａにはんだ付けされている。このため、６個のパワーモジュール１は、３個ずつ、２列に配列されている。このような状態において、一方の列のパワーモジュール１の外部エミッタ４の接続端部と、他方の列のパワーモジュール１の外部コレクタ３の接続端部とが、所定の間隔をおいて向き合っている。すなわち、共通の出力端子Ｕ,Ｖ,Ｗに接続されるべき外部端子の接続端部同士が、所定の間隔をおいて向き合っている。また、一方の列の全パワーモジュール１の外部コレクタ３の接続端部が一列に並び、他方の列の全パワーモジュール１の外部エミッタ４の接続端部が一列に並んでいる。すなわち、共通の電源端子Ｐ,Ｎに接続されるべき外部端子の接続端部が一列に並んでいる。このため、配線インダクタンスの小さい簡単な結線構造で、図１８の等価回路を実現することができる。なお、ここでは、単体のパワーモジュールを複数用いてインバータモジュールを構成しているが、各列を構成する複数のパワーモジュールに代わりに、一列分のパワーモジュールを一体化したモジュール(図１０等参照)を用いてもよい。   As shown in FIG. 19A, the inverter module includes an external cooling body 23, six power modules 1 in which an external gate electrode 5 is connected to a control microcomputer, and three output terminals to which loads such as motors are connected. U, V, W, and two power terminals P, N connected to a power source. The external cooling body 23 is a refrigerant from the supply port 62 to the discharge port 63 through six power module mounting portions 23A arranged in two rows inside the case 60, and fluid paths 23b along the rows of the power module mounting portions 23A. Have two rows of fin portions 23B. The six power modules 1 are soldered to the convex portion 23a of the power module mounting portion 23A of the two rows of power module mounting portions 23A. For this reason, the six power modules 1 are arranged in two rows by three. In such a state, the connection end of the external emitter 4 of the power module 1 in one row and the connection end of the external collector 3 of the power module 1 in the other row face each other at a predetermined interval. . That is, the connection ends of the external terminals to be connected to the common output terminals U, V, and W face each other at a predetermined interval. Further, the connection end portions of the external collectors 3 of all the power modules 1 in one row are arranged in a row, and the connection end portions of the external emitters 4 of all the power modules 1 in the other row are arranged in a row. That is, the connection end portions of the external terminals to be connected to the common power supply terminals P and N are arranged in a line. Therefore, the equivalent circuit of FIG. 18 can be realized with a simple connection structure with a small wiring inductance. Here, the inverter module is configured by using a plurality of single power modules, but instead of a plurality of power modules constituting each row, a module in which power modules for one row are integrated (see FIG. 10 and the like). ) May be used.

このようなことは、変更例４に係る構造のパワーモジュールを用いた場合についても同様に言えることである。例えば、図２１に示すように、一方の列(上アーム)に、外部エミッタ端子４の接続端部だけが外部コレクタ端子３と逆向きのパワーモジュールを３つ用いた場合には、他方の列(下アーム)に、外部エミッタ端子４の接続端部および外部ゲート端子５の接続端部(ここではさらに補助エミッタ端子４'の接続端部も)が外部コレクタ端子３と逆方向のパワーモジュールを３つ用いれば、共通の出力端子Ｕ,Ｖ,Ｗに接続されるべき外部端子の接続端部同士を、上アームと下アームとの間で重ね合わせることができる。また、共通の電源端子Ｐ,Ｎに接続されるべき外部端子の接続端部を、上下両サイドに一列に並べることができる。したがって、この場合にも同様に、簡単な結線構造で、図１８の等価回路を実現することができる。なお、この場合には、インバータ小型化の観点から、上下アームの両端を揃えたときに上アームのパワーモジュールの外部エミッタ端子４と下アームのパワーモジュールの外部コレクタ端子３とが重なり合うようにすることが望ましい。   The same can be said for the case where the power module having the structure according to the modification 4 is used. For example, as shown in FIG. 21, in the case where three power modules are used in one row (upper arm) and only the connection end of the external emitter terminal 4 is opposite to the external collector terminal 3, the other row A power module in which the connection end of the external emitter terminal 4 and the connection end of the external gate terminal 5 (here, also the connection end of the auxiliary emitter terminal 4 ′) are opposite to the external collector terminal 3 is connected to the (lower arm). If three are used, connection ends of external terminals to be connected to the common output terminals U, V, and W can be overlapped between the upper arm and the lower arm. Further, the connection end portions of the external terminals to be connected to the common power supply terminals P and N can be arranged in a line on both the upper and lower sides. Accordingly, in this case as well, the equivalent circuit of FIG. 18 can be realized with a simple connection structure. In this case, from the viewpoint of downsizing the inverter, when both ends of the upper and lower arms are aligned, the external emitter terminal 4 of the upper arm power module and the external collector terminal 3 of the lower arm power module are overlapped. It is desirable.

このような構造のインバータは、隙間等、奥行きは深いが間隔の狭い空間への設置に適しているが、奥行きの浅い空間等への設置には不向きである。したがって、奥行きの浅い空間等への設置の要請がある場合等には、インバータモジュールを、図２２に示すような構造にすることが望ましい。   The inverter having such a structure is suitable for installation in a space with a deep space such as a gap but a small interval, but is not suitable for installation in a space with a shallow depth. Therefore, when there is a request for installation in a shallow space or the like, it is desirable that the inverter module has a structure as shown in FIG.

このインバータモジュールは、図２２(ａ)に示すように、一方の側から外部端子２,３,４が外部に突き出すように複数のパワーモジュール１を挟み込んだ１対の外部冷却体２３を有している。この１対の外部冷却体２３は、複数のパワーモジュール１を挟み込んだ状態でネジ４０または溶接で固定されているが、それぞれの外部冷却体２３の対向面には、図２３に示すように、複数のパワーモジュール１の封止樹脂２が一列に並んで収容される、断面Ｌ字形の凹部１８が形成されている。この凹部１８の底面には、図２２(ｂ)に示すように、パワーモジュール１の導体膜１１の露出面１１ａとこれを囲む樹脂端部２ａとによって形成された凹部にはまり込む複数の凸部２３Ａが一列に形成されており、これらの凸部の上面に、それぞれ、パワーモジュール１が、外部端子３,４,５を所定の方向に向けてはんだ付けされている。このような一対の外部冷却体２３の対向面同士を重ね合わせたことによって、図２２(ａ)に示すように、一方の外部冷却体２３側のパワーモジュール１の外部エミッタ端子４と、他方の外部冷却体２３側のパワーモジュール１の外部コレクタ端子３とが向い合っている。すなわち、共通の出力端子Ｕ,Ｖ,Ｗに接続されるベき外部端子３,４同士が対向している。このため、共通の出力端子Ｕ,Ｖ,Ｗに接続されるベき外部端子３,４間にその出力端子を挟み込み、それらを１組のボルトとナット３２とで固定するだけでよい。   As shown in FIG. 22 (a), this inverter module has a pair of external cooling bodies 23 sandwiching a plurality of power modules 1 so that external terminals 2, 3, and 4 protrude outside from one side. ing. The pair of external cooling bodies 23 are fixed by screws 40 or welding in a state where a plurality of power modules 1 are sandwiched, but on the opposing surfaces of the respective external cooling bodies 23, as shown in FIG. A recess 18 having an L-shaped cross section is formed in which the sealing resins 2 of the plurality of power modules 1 are accommodated in a line. On the bottom surface of the recess 18, as shown in FIG. 22 (b), a plurality of protrusions that fit into the recess formed by the exposed surface 11 a of the conductor film 11 of the power module 1 and the resin end 2 a surrounding it. 23A are formed in a row, and the power module 1 is soldered to the upper surfaces of these convex portions with the external terminals 3, 4, 5 directed in a predetermined direction. By overlapping the opposing surfaces of the pair of external cooling bodies 23 as shown in FIG. 22A, the external emitter terminal 4 of the power module 1 on the one external cooling body 23 side and the other The external collector terminal 3 of the power module 1 on the external cooling body 23 side faces. That is, the external terminals 3 and 4 connected to the common output terminals U, V, and W are opposed to each other. For this reason, it is only necessary to sandwich the output terminal between the external terminals 3 and 4 connected to the common output terminals U, V and W and fix them with a set of bolts and nuts 32.

ただし、このような構造としたことによって、図２２(ａ)に示すように、互いに逆極性の電源Ｐ,Ｎに接続される外部端子も向い合ってしまう場合には、それらの外部端子間に遮蔽シートを介在させておく必要がある。   However, with such a structure, as shown in FIG. 22A, when external terminals connected to the power supplies P and N having opposite polarities face each other, as shown in FIG. It is necessary to interpose a shielding sheet.

なお、ここで用いた１対の外部冷却体２３は、互いにネジ４０または溶接で固定されているが、必ずしも、このようする必要はない。例えば、個々の外部冷却体２３を取付け筐体３４にネジ３６で固定する、個々の外部冷却体２３を冷却媒体供給装置に固定する等によって、１対の外部冷却体２３の重なり合った状態が維持されるようにしてもよい。   The pair of external cooling bodies 23 used here are fixed to each other by screws 40 or welding, but it is not always necessary to do so. For example, the overlapping state of the pair of external cooling bodies 23 is maintained by fixing the individual external cooling bodies 23 to the mounting housing 34 with screws 36, fixing the individual external cooling bodies 23 to the cooling medium supply device, or the like. You may be made to do.

また、ここで用いる外部冷却体２３のフィン部の形状に制限はないが、図２２(ｂ)に示したように、一方から他方へ冷却媒体を導く流路３７を内部に有するフィン部２３Ａを使用する場合には、フィン部２３Ａを直接取り付け筐体３４にネジ３６で固定し、図２４に示したように、ストレート型のフィン部２３Ａを用いる場合には、外部端子３,４,５側への冷却媒体漏洩を防ぐＯリング３５を介して、フィン部２３Ａを取り付け筐体３４にネジ３６で固定する、というように、フィン部２３３Ｂの形状に応じて、取付け筐体３４への取付け方法を変えることが望ましい。   Further, the shape of the fin portion of the external cooling body 23 used here is not limited. However, as shown in FIG. 22 (b), the fin portion 23A having a flow path 37 for guiding the cooling medium from one to the other as shown in FIG. When used, the fin portion 23A is directly fixed to the mounting case 34 with screws 36. As shown in FIG. 24, when the straight fin portion 23A is used, the external terminals 3, 4, 5 side According to the shape of the fin portion 233B, the fin portion 23A is fixed to the attachment housing 34 via the O-ring 35 that prevents the cooling medium from leaking to the attachment housing 34. It is desirable to change

ところで、３相インバータのＩＧＢＴのコレクタ−エミッタ間には、断続的な電流による跳上り電圧(−Ｌｄｉ／ｄｔ)が直流電圧に重畳する。これを除去するため、図２６に示すように、直流リアクトル、平滑コンデンサ４１がインバータモジュールに付加されることが多い。本実施の形態に係るパワーモジュール１が搭載されたインバータモジュールにも、もちろん、そのような平滑コンデンサ等を接続可能である。一例として、図２５(ｂ)に示した外部冷却体２３の両側に、変更例６に係る３連パワーモジュール１(図１０参照)が取り付けられたインバータモジュールにコンデンサを接続した場合のインバータ構成例を図２７および図２８に示す。   By the way, a jump voltage (-Ldi / dt) due to an intermittent current is superimposed on a DC voltage between the collector and emitter of the IGBT of the three-phase inverter. In order to eliminate this, as shown in FIG. 26, a DC reactor and a smoothing capacitor 41 are often added to the inverter module. Of course, such a smoothing capacitor or the like can be connected to the inverter module on which the power module 1 according to the present embodiment is mounted. As an example, an inverter configuration example when a capacitor is connected to an inverter module in which the triple power module 1 (see FIG. 10) according to the modified example 6 is attached on both sides of the external cooling body 23 shown in FIG. Are shown in FIGS.

図２７(ａ)(ｂ)に示すように、このインバータは、インバータモジュール、平滑コンデンサ４１、インバータモジュールおよび平滑コンデンサ４１が固定されたケース５５、プリント配線板５４、インバータモジュールに力が加わらないようにプリント基板５４とケース５５の底面との間隔を維持する補強棒５６、プリント配線板５４に搭載された制御用マイコンその他の表面実装部品５７,５８、を有している。また、これらに加えて、出力端子に取り付けられた電流センサをさらに有していることもある。   As shown in FIGS. 27 (a) and 27 (b), this inverter does not apply force to the inverter module, the smoothing capacitor 41, the case 55 to which the inverter module and the smoothing capacitor 41 are fixed, the printed wiring board 54, and the inverter module. In addition, a reinforcing rod 56 for maintaining the distance between the printed circuit board 54 and the bottom surface of the case 55, a control microcomputer mounted on the printed wiring board 54, and other surface mount components 57, 58 are provided. In addition to these, a current sensor attached to the output terminal may be further included.

ここで用いるインバータモジュールにおいては、図２８(ｂ)に示すように、上アーム(図中左側の３連パワーモジュール１)のエミッタ端子４と下アーム(図中右側の３連パワーモジュール)のコレクタ端子３とがそれぞれ短絡棒４９で短絡されている。そして、各短絡棒４９の一端部に、それぞれ、出力配線Ｕ,Ｖ,Ｗ(ここでは、出力端子Ｗのみ図示)が接続されている。また、各パワーモジュール１の補助エミッタ端子４'および外部ゲート端子５は、一方の電源端子Ｐにあけられた貫通穴５２を通過し、プリント基板５４のスルーホールにはんだ付け、または、プリント基板５４に設けられたコネクタへ挿入されている。   In the inverter module used here, as shown in FIG. 28 (b), the emitter terminal 4 of the upper arm (the left triple power module 1 in the figure) and the collector of the lower arm (the right triple power module in the figure). The terminals 3 are each short-circuited by a short-circuit rod 49. Then, output wirings U, V, W (only the output terminal W is shown here) are connected to one end of each short-circuit rod 49, respectively. Further, the auxiliary emitter terminal 4 ′ and the external gate terminal 5 of each power module 1 pass through the through hole 52 formed in one power supply terminal P, and are soldered to the through hole of the printed circuit board 54, or the printed circuit board 54. It is inserted in the connector provided in.

また、ここで用いるインバータモジュールの２つの電源端子Ｐ,Ｎは、板状であり、絶縁板４８を挟んで絶縁状態を維持しながら密着している。このような配置することによって、流入電流と流出電流とがほぼ逆向きとなるため、相互インダクタンスの効果によって配線インダクタンスを低減することができる。このため、保償回路(スナバ回路)を省略することも可能である。   Further, the two power supply terminals P and N of the inverter module used here are plate-shaped and are in close contact with each other while maintaining an insulating state with the insulating plate 48 interposed therebetween. With such an arrangement, the inflow current and the outflow current are almost reversed, so that the wiring inductance can be reduced by the effect of mutual inductance. For this reason, the compensation circuit (snubber circuit) can be omitted.

そして、図２８(ａ)(ｂ)に示すように、２枚の電源端子のうち、一方の電源端子Ｐは、平滑コンデンサ４１の一方の端子４３に直接ネジ４４で固定され、他方の電源端子Ｎは、コンデンサ４１の他方の端子４６に直接ネジ４７で固定されている。このような接続構造とすることによって、平滑コンデンサと各ＩＧＢＴとの間の配線の長さを短縮化し、その断面積を大きくすることができる。これにより、配線インダクタンスおよび直流抵抗が抑制される。   Then, as shown in FIGS. 28A and 28B, one of the two power terminals is directly fixed to one terminal 43 of the smoothing capacitor 41 with a screw 44, and the other power terminal. N is directly fixed to the other terminal 46 of the capacitor 41 with a screw 47. By adopting such a connection structure, the length of the wiring between the smoothing capacitor and each IGBT can be shortened and the cross-sectional area thereof can be increased. Thereby, wiring inductance and DC resistance are suppressed.

このように、配線構造の改善を図ることができる。   Thus, the wiring structure can be improved.

なお、以上においては、説明の便宜上、インバータには、上述したパワーモジュールのいずれか１種類を用いているが、上述したパワーモジュールの他の種類を用いてもよい。例えば、図２７および図２８に示したインバータには、変更例６に係る３連パワーモジュールを使用しているが、上述した他種パワーモジュールを使用してもよい。   In the above, for convenience of explanation, any one of the above-described power modules is used for the inverter, but other types of the above-described power modules may be used. For example, although the triple power module according to Modification 6 is used for the inverters shown in FIGS. 27 and 28, the above-described other types of power modules may be used.

(ａ)は、本発明の実施の一形態に係るパワーモジュールを、互いに異なる方向から見た場合の斜視図であり、(ｂ)および(Ｃ)は、そのＡ−Ａ断面図およびＢ−Ｂ断面図である。(a) is the perspective view at the time of seeing the power module which concerns on one Embodiment of this invention from a mutually different direction, (b) and (C) are the AA sectional drawing and BB It is sectional drawing. 本発明の実施の一形態に係るパワーモジュールの等価回路図である。1 is an equivalent circuit diagram of a power module according to an embodiment of the present invention. 図１のパワーモジュールの製造方法を説明するための図である。It is a figure for demonstrating the manufacturing method of the power module of FIG. (ａ)は、本発明の実施の一形態に係る３連パワーモジュールの、リードフレーム切離し前の正面図であり、(ｂ)は、その背面図である。(a) is a front view of the triple power module according to one embodiment of the present invention before the lead frame is detached, and (b) is a rear view thereof. (ａ)は、本発明の実施の一形態に係るパワーモジュールを、セラミック基板の表面を含む面で切った場合の断面図であり、(ｂ)は、そのＡ−Ａ断面図である。(a) is sectional drawing at the time of cutting the power module which concerns on one Embodiment of this invention by the surface containing the surface of a ceramic substrate, (b) is the AA sectional drawing. (ａ)は、本発明の実施の一形態に係るパワーモジュールを、セラミック基板の表面を含む面で切った場合の断面図であり、(ｂ)は、そのＡ−Ａ断面図およびその背面図である。(a) is sectional drawing at the time of cutting the power module which concerns on one Embodiment of this invention in the surface containing the surface of a ceramic substrate, (b) is the AA sectional drawing and its rear view It is. (ａ)は、本発明の実施の一形態に係るパワーモジュールを、セラミック基板の表面を含む面で切った場合の断面図であり、(ｂ)は、そのＡ−Ａ断面図である。(a) is sectional drawing at the time of cutting the power module which concerns on one Embodiment of this invention by the surface containing the surface of a ceramic substrate, (b) is the AA sectional drawing. (ａ)は、本発明の実施の一形態に係る３連パワーモジュールの、リードフレーム切離し前の正面図であり、(ｂ)および(ｃ)は、そのＢ−Ｂ断面図およびＡ−Ａ断面図である。(a) is a front view of the triple power module according to the embodiment of the present invention before the lead frame is detached, and (b) and (c) are a BB sectional view and an AA sectional view thereof. FIG. (ａ)は、本発明の実施の一形態に係るパワーモジュールの正面図であり、(ｂ)は、そのＡ−Ａ断面図である。(a) is a front view of the power module which concerns on one Embodiment of this invention, (b) is the AA sectional drawing. (ａ)および(ｂ)は、本発明の実施の一形態に係る３連パワーモジュールの正面図および背面図であり、(ｃ)は、その、リードフレーム切離し前の状態を説明するため切欠き図である。(a) And (b) is the front view and rear view of the triple power module which concerns on one Embodiment of this invention, (c) is notched in order to demonstrate the state before lead frame separation FIG. 本発明の実施の一形態に係る３連パワーモジュールの正面図である。It is a front view of the triple power module which concerns on one Embodiment of this invention. 本発明の実施の一形態に係るパワーモジュールに取り付けられる外部冷却体の構造を説明するための図である。It is a figure for demonstrating the structure of the external cooling body attached to the power module which concerns on one Embodiment of this invention. 本発明の実施の一形態に係るパワーモジュールと外部冷却体との接合部の部分断面図である。It is a fragmentary sectional view of the junction part of the power module which concerns on one Embodiment of this invention, and an external cooling body. 本発明の実施の一形態に係るパワーモジュールと外部冷却体との接合部の部分断面図である。It is a fragmentary sectional view of the junction part of the power module which concerns on one Embodiment of this invention, and an external cooling body. 本発明の実施の一形態に係るパワーモジュールの正面図である。It is a front view of the power module which concerns on one Embodiment of this invention. 図１５のパワーモジュールと外部冷却体との接合部の部分断面図である。It is a fragmentary sectional view of the junction part of the power module of FIG. 15, and an external cooling body. 本発明の実施の一形態に係る３連パワーモジュールの正面図である。It is a front view of the triple power module which concerns on one Embodiment of this invention. インバータモジュールの等価回路図である。It is an equivalent circuit diagram of an inverter module. (ａ)は、本発明の実施の一形態に係るインバータの断面図であり、(ｂ)は、その、カバー内部の配置を説明するめのＡ−Ａ断面図である。(a) is sectional drawing of the inverter which concerns on one Embodiment of this invention, (b) is AA sectional drawing for demonstrating the arrangement | positioning inside the cover. (ａ)は、本発明の実施の一形態に係るパワーモジュールの正面図であり、(ｂ)は、そのパワーモジュールを、セラミック基板の表面を含む面で切った場合の断面図である。(a) is a front view of the power module which concerns on one Embodiment of this invention, (b) is sectional drawing at the time of cutting the power module in the surface containing the surface of a ceramic substrate. 本発明の実施の一形態に係るインバータモジュールにおける、パワーモジュールの外部端子の接続構造を説明するための図である。It is a figure for demonstrating the connection structure of the external terminal of a power module in the inverter module which concerns on one Embodiment of this invention. 本発明の実施の一形態に係るインバータの正面図であり、(ｂ)は、そのＢ−Ｂ断面図である。It is a front view of the inverter which concerns on one Embodiment of this invention, (b) is the BB sectional drawing. 図２２(ａ)のインバータのＡ−Ａ正面図である。It is AA front view of the inverter of Fig.22 (a). 本発明の実施の一形態に係るインバータモジュールの断面図である。It is sectional drawing of the inverter module which concerns on one Embodiment of this invention. 本実施の形態の一形態に係るパワーモジュールが取り付けられた状態の２種類の冷却体の断面図である。It is sectional drawing of two types of cooling bodies of the state to which the power module which concerns on one form of this Embodiment was attached. コンデンサ付きのインバータモジュールの等価回路図である。It is an equivalent circuit diagram of an inverter module with a capacitor. (ａ)は、本発明の実施の一形態に係るインバータの正面図(一部切欠き)であり、(ｂ)は、そのＣ−Ｃ断面図である。(a) is the front view (partially notched) of the inverter which concerns on one Embodiment of this invention, (b) is the CC sectional drawing. (ａ)および(ｂ)は、図２７(ａ)のインバータのＡ−Ａ断面図およびＢ−Ｂ断面図である。(a) And (b) is AA sectional drawing and BB sectional drawing of the inverter of Fig.27 (a). インバータモジュールの等価回路図である。It is an equivalent circuit diagram of an inverter module. (ａ)は、本発明の実施の一形態に係る、図２９の等価回路を実現するためのパワーモジュールの正面図であり、(ｂ)は、そのＡ−Ａ断面図である。(a) is the front view of the power module for implement | achieving the equivalent circuit of FIG. 29 based on one Embodiment of this invention, (b) is the AA sectional drawing. 図３０のパワーモジュールに用いられるパワー素子の斜視図である。It is a perspective view of the power element used for the power module of FIG. 図３０のパワーモジュールの内部構造を説明するための図である。It is a figure for demonstrating the internal structure of the power module of FIG. 両側に外部冷却体が取り付けられた、図３０のパワーモジュールの斜視図である。FIG. 31 is a perspective view of the power module of FIG. 30 with external cooling bodies attached on both sides. (ａ)は、本発明の実施の一形態に係るパワーモジュールであり、(ｂ)および(ｃ)は、その側面図である。(a) is the power module which concerns on one Embodiment of this invention, (b) And (c) is the side view. 従来のパワーモジュールの断面図である。It is sectional drawing of the conventional power module.

符号の説明Explanation of symbols

１…パワーモジュール、２…封止樹脂、２ａ…封止樹脂の端部、３…コレクタ端子、４…エミッタ端子、４'……補助エミッタ端子、５…ゲート端子、７…セラミック基板、８…コレクタ電極、９…エミッタ電極、１０…ゲート電極、１１…導電膜、１１ａ…導体膜の露出部、１３,１４…パワー素子、２３……冷却体、２６…はんだ層の厚さ調整用突起、２７…取付け部、３０…遮蔽板、３１…連結部 DESCRIPTION OF SYMBOLS 1 ... Power module, 2 ... Sealing resin, 2a ... End part of sealing resin, 3 ... Collector terminal, 4 ... Emitter terminal, 4 '... Auxiliary emitter terminal, 5 ... Gate terminal, 7 ... Ceramic substrate, 8 ... Collector electrode, 9 ... Emitter electrode, 10 ... Gate electrode, 11 ... Conductive film, 11a ... Exposed portion of conductor film, 13, 14 ... Power element, 23 ... Cooling body, 26 ... Protrusion for adjusting thickness of solder layer, 27 ... Mounting part, 30 ... Shielding plate, 31 ... Connecting part

Claims (14)

インバータ回路の上アーム回路部を構成する第１スイッチング素子と、  A first switching element constituting the upper arm circuit portion of the inverter circuit;
前記インバータ回路の下アーム回路部を構成する第２スイッチング素子と、  A second switching element constituting a lower arm circuit portion of the inverter circuit;
金属接合材を介して前記第１スイッチング素子のコレクタ電極側と接続される第１導体部材と、  A first conductor member connected to the collector electrode side of the first switching element via a metal bonding material;
金属接合材を介して前記第２スイッチング素子のエミッタ電極側と接続される第２導体部材と、  A second conductor member connected to the emitter electrode side of the second switching element via a metal bonding material;
前記第１導体部材と一体に形成される第１外部端子と、  A first external terminal formed integrally with the first conductor member;
前記第２導体部材と一体に形成される第２外部端子と、を備え、  A second external terminal formed integrally with the second conductor member,
前記第２導体部材は、当該第２導体部材の少なくとも一部が前記第１導体部材における前記第１スイッチング素子との接続面と対向するように配置され、  The second conductor member is disposed such that at least a part of the second conductor member faces a connection surface of the first conductor member with the first switching element,
前記第２外部端子は、前記第１外部端子と同一方向に突出し、  The second external terminal protrudes in the same direction as the first external terminal,
さらに、前記第２外部端子は、前記第２導体部材における前記第１導体部材との対向面の鉛直方向から投影したときに、当該第２外部端子の投影部と当該第１外部端子の投影部とが重なるように、配置されるパワーモジュール。  Furthermore, when the second external terminal is projected from the vertical direction of the surface of the second conductor member facing the first conductor member, the projection part of the second external terminal and the projection part of the first external terminal The power module is arranged so that and overlap. 請求項１に記載のパワーモジュールであって、  The power module according to claim 1,
前記第１導体部材とは前記第１スイッチング素子を介して電気的に接続され、かつ前記第２導体部材とは前記第２スイッチング素子を介して電気的に接続される出力端子を備え、  An output terminal electrically connected to the first conductor member via the first switching element, and an output terminal electrically connected to the second conductor member via the second switching element;
前記出力端子は、前記第１外部端子及び前記第２外部端子と同一方向に突出するパワーモジュール。  The output module is a power module that protrudes in the same direction as the first external terminal and the second external terminal. 請求項１または２に記載のいずれかのパワーモジュールであって、  The power module according to claim 1 or 2,
第１冷却部材と第２冷却部材とにより構成される冷却体と、  A cooling body constituted by a first cooling member and a second cooling member;
前記第１冷却部材の所定面に配置された第１絶縁部材と、  A first insulating member disposed on a predetermined surface of the first cooling member;
前記第２冷却部材の所定面に配置された第２絶縁部材と、を備え、  A second insulating member disposed on a predetermined surface of the second cooling member,
前記第１冷却部材と第２冷却部材は、前記第１絶縁部材と前記第２絶縁部材が向き合うように配置され、  The first cooling member and the second cooling member are arranged so that the first insulating member and the second insulating member face each other,
前記第１導体部材は、前記第１スイッチング素子が配置された側とは反対側の面が前記第１絶縁部材に対向するように配置され、  The first conductor member is disposed such that a surface opposite to the side on which the first switching element is disposed is opposed to the first insulating member,
前記第２導体部材は、当該第２導体部材における前記第１導体部材との対向面とは反対側の面が前記第２絶縁部材と対向するように配置されるパワーモジュール。  The second conductor member is a power module arranged such that a surface of the second conductor member opposite to the surface facing the first conductor member faces the second insulating member. 請求項１に記載のパワーモジュールであって、  The power module according to claim 1,
一面に開口部を形成し、かつ底部を有する収納空間を形成する冷却体を備え、  A cooling body that forms an opening on one side and forms a storage space having a bottom,
前記第１導体部材は、前記第１スイッチング素子が配置された側とは反対側の面が前記冷却体の前記収納空間を形成する一方の壁に対向するように配置され、  The first conductor member is disposed such that a surface opposite to the side on which the first switching element is disposed is opposed to one wall forming the storage space of the cooling body,
前記第２導体部材は、当該第２導体部材における前記第１導体部材との対向面とは反対側の面が前記冷却体の前記収納空間を形成する他方の壁に対向するように配置されるパワーモジュール。  The second conductor member is arranged such that a surface of the second conductor member opposite to the surface facing the first conductor member is opposed to the other wall forming the storage space of the cooling body. Power module. 第１ダイオードと、当該第１ダイオードと電気的に並列に接続された第１ＩＧＢＴとにより構成される上アーム回路部と、  An upper arm circuit unit configured by a first diode and a first IGBT electrically connected in parallel with the first diode;
第２ダイオードと、当該第２ダイオードと電気的に並列に接続された第２ＩＧＢＴとにより構成される下アーム回路部と、  A lower arm circuit unit including a second diode and a second IGBT electrically connected in parallel with the second diode;
金属接合材を介して、前記第１ダイオードのカソード電極及び前記第１ＩＧＢＴのコレクタ電極と接合される第１導体部材と、  A first conductor member bonded to the cathode electrode of the first diode and the collector electrode of the first IGBT via a metal bonding material;
金属接合材を介して、前記第２ダイオードのアノード電極及び前記第２ＩＧＢＴのエミッタ電極と接合される第２導体部材と、  A second conductor member bonded to the anode electrode of the second diode and the emitter electrode of the second IGBT via a metal bonding material;
前記第１導体部材と一体に形成され、かつ板状に構成されたコレクタ端子と、  A collector terminal formed integrally with the first conductor member and configured in a plate shape;
前記第２導体部材と一体に形成され、かつ板状に構成されたエミッタ端子と、  An emitter terminal formed integrally with the second conductor member and configured in a plate shape;
第１冷却部材と第２冷却部材とにより構成される冷却体と、を備え、  A cooling body constituted by a first cooling member and a second cooling member,
前記第１導体部材は、前記上アーム回路部が配置された側とは反対側の面が前記第１冷却部材に対向するように配置され、  The first conductor member is disposed such that a surface opposite to the side on which the upper arm circuit portion is disposed is opposed to the first cooling member,
前記第２導体部材は、前記第１導体部材と少なくとも一部が対向するように配置され、かつ当該第１導体部材との対向面とは反対側の面が前記第２冷却部材と対向するように配置され、  The second conductor member is disposed so as to be at least partially opposed to the first conductor member, and a surface opposite to the surface facing the first conductor member is opposed to the second cooling member. Placed in
前記上アーム回路部及び前記下アーム回路部は、前記第１冷却部材と前記第２冷却部材の間に配置され、  The upper arm circuit portion and the lower arm circuit portion are disposed between the first cooling member and the second cooling member,
前記コレクタ端子と前記エミッタ端子は、当該コレクタ端子の主面と当該エミッタ端子の主面とが向き合いように配置されるパワーモジュール。  The power module in which the collector terminal and the emitter terminal are arranged so that a main surface of the collector terminal faces a main surface of the emitter terminal. 請求項５に記載のパワーモジュールであって、  The power module according to claim 5,
前記第１導体部材とは前記第１ＩＧＢＴを介して電気的に接続され、かつ前記第２導体部材とは前記第１ＩＧＢＴを介して電気的に接続される出力端子を備え、  An output terminal electrically connected to the first conductor member via the first IGBT and electrically connected to the second conductor member via the first IGBT;
前記出力端子は、前記コレクタ端子及び前記エミッタ端子と同一方向に突出するパワーモジュール。  The output module is a power module protruding in the same direction as the collector terminal and the emitter terminal. 請求項５または６に記載のいずれかのパワーモジュールであって、  The power module according to claim 5 or 6,
前記第１冷却部材の所定面に配置された第１絶縁部材と、  A first insulating member disposed on a predetermined surface of the first cooling member;
前記第２冷却部材の所定面に配置された第２絶縁部材と、を備え、  A second insulating member disposed on a predetermined surface of the second cooling member,
前記第１冷却部材と第２冷却部材は、前記第１絶縁部材と前記第２絶縁部材とが向き合うように配置され、  The first cooling member and the second cooling member are arranged so that the first insulating member and the second insulating member face each other,
前記第１導体部材は、前記第１ＩＧＢＴが配置された側とは反対側の面が前記第１絶縁部材に対向するように配置され、  The first conductor member is disposed such that a surface opposite to the side on which the first IGBT is disposed is opposed to the first insulating member,
前記第２導体部材は、当該第２導体部材における前記第１導体部材との対向面とは反対側の面が前記第２絶縁部材と対向するように配置されるパワーモジュール。  The second conductor member is a power module arranged such that a surface of the second conductor member opposite to the surface facing the first conductor member faces the second insulating member. 請求項５に記載のパワーモジュールであって、  The power module according to claim 5,
前記冷却体は、一面に開口部を形成し、かつ底部を有する収納空間を形成し、  The cooling body forms an opening on one side and forms a storage space having a bottom,
前記第１導体部材は、前記第１ＩＧＢＴが配置された側とは反対側の面が前記冷却体の前記収納空間を形成する一方の壁に対向するように配置され、  The first conductor member is disposed such that a surface opposite to the side on which the first IGBT is disposed is opposed to one wall forming the storage space of the cooling body,
前記第２導体部材は、当該第２導体部材前における記第１導体部材との対向面とは反対側の面が前記冷却体の前記収納空間を形成する他方の壁に対向するように配置されるパワーモジュール。  The second conductor member is disposed such that a surface opposite to the surface facing the first conductor member in front of the second conductor member is opposed to the other wall forming the storage space of the cooling body. Power module. 請求項８に記載のいずれかのパワーモジュールであって、  The power module according to claim 8, wherein
前記冷却体は、当該冷却体の内壁により前記収納空間が形成され、かつ当該冷却体の外壁が冷却媒体と直接接触するように、配置されるパワーモジュール。  The cooling body is a power module arranged such that the storage space is formed by an inner wall of the cooling body, and an outer wall of the cooling body is in direct contact with a cooling medium. 請求項９に記載のパワーモジュールであって、  The power module according to claim 9, wherein
前記冷却体は、当該冷却体の外壁にフィンを形成するパワーモジュール。  The said cooling body is a power module which forms a fin in the outer wall of the said cooling body. 請求項８ないし１０に記載のいずれかのパワーモジュールであって、  The power module according to any one of claims 8 to 10,
前記出力端子と前記コレクタ端子と前記エミッタ端子は、前記冷却体の前記開口部から突出するパワーモジュール。  The output module, the collector terminal, and the emitter terminal are power modules that protrude from the opening of the cooling body. 請求項３に記載のパワーモジュールであって、  The power module according to claim 3,
前記第１冷却部材と前記第２冷却部材は、ネジまたは、溶接により固定されるパワーモジュール。  The first cooling member and the second cooling member are power modules fixed by screws or welding. 請求項３ないし１２に記載のいずれかのパワーモジュールであって、  The power module according to any one of claims 3 to 12,
前記冷却体は、当該冷却体を形成する媒質内部に冷却媒体を導く流路が形成されるパワーモジュール。  The cooling body is a power module in which a flow path for guiding the cooling medium is formed inside the medium forming the cooling body. 請求項３ないし１２に記載のいずれかのパワーモジュールを備えた電力変換装置であって、  A power conversion device comprising the power module according to any one of claims 3 to 12,
冷却媒体を流すための空間を形成する筐体を備え、  A housing that forms a space for flowing a cooling medium;
前記冷却体は、前記筐体にＯリングを介してネジにより固定される電力変換装置。  The said cooling body is a power converter device fixed to the said housing | casing with a screw via an O-ring.
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