JP5017332B2 - Inverter - Google Patents

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Publication number
JP5017332B2
JP5017332B2 JP2009192710A JP2009192710A JP5017332B2 JP 5017332 B2 JP5017332 B2 JP 5017332B2 JP 2009192710 A JP2009192710 A JP 2009192710A JP 2009192710 A JP2009192710 A JP 2009192710A JP 5017332 B2 JP5017332 B2 JP 5017332B2
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wiring
power
power module
cooling body
surface
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JP2009278134A (en
JP2009278134A5 (en
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卓義 中村
敏夫 小川
一二 山田
光幸 本部
典孝 神村
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株式会社日立製作所
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Abstract

<P>PROBLEM TO BE SOLVED: To further improve the reliability of a power module. <P>SOLUTION: In the power module in which active elements 13 and 14 soldered to an electrode 8 on one face of a ceramic substrate 7 are sealed with resin 2, a conductive film 11 is formed on the other face of the ceramic substrate 7 and the resin 2 is extended to cover a peripheral portion of the conductive film 11. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a resin-sealed package, and more particularly to a module structure that is effective in preventing temperature rise of a resin-sealed element.

  Generally, a motor is used as a drive source for various devices such as an electric vehicle, a machine tool, a transfer device, an air conditioner, and home appliances. These motors are often controlled by inverters regardless of whether they are direct current or alternating current. A power module such as an IGBT (Insulated Gate Bipolar Transistor) module or a MOS (Metal Oxide Semiconductor) transistor module is used for the main circuit of such an inverter. As a technique for reducing the saturation thermal resistance of such a power module, a technique described in JP-A-5-67697 is known. According to this technique, as shown in FIG. 21, an AlN substrate 113 excellent in thermal conductivity and a chip 112 are brought into close contact with each other via a lead frame 111, and the back surface of the AlN substrate 113 (opposite to the mounting surface of the chip or the like). The periphery of the chip is molded with resin 114 so that the side surface is exposed. By adopting such a structure, the saturation thermal resistance of the power module is reduced.

  By the way, from the viewpoint of the reliability of the inverter, besides reducing the thermal resistance of the power module used therefor, it is also desired to improve the reliability of element protection by the sealing resin.

  Accordingly, an object of the present invention is to further improve the reliability of the power module.

In order to solve the above problems, in one embodiment of the present invention,
In a power module in which one or more active elements soldered to electrodes on one surface of a ceramic substrate are sealed with a resin, a conductor film is formed on the other surface of the ceramic substrate, and the substrate on which the conductor film is formed The peripheral part of the surface was covered with the sealing resin of the active element.

  According to the present invention, the reliability of the power module can be further improved.

(a) is the perspective view at the time of seeing the power module which concerns on one Embodiment of this invention from a mutually different direction, (b) and (C) are the AA sectional drawing and BB It is sectional drawing. 1 is an equivalent circuit diagram of a power module according to an embodiment of the present invention. It is a figure for demonstrating the manufacturing method of the power module of FIG. (a) is a front view of the triple power module according to one embodiment of the present invention before the lead frame is detached, and (b) is a rear view thereof. (a) is sectional drawing at the time of cutting the power module which concerns on one Embodiment of this invention by the surface containing the surface of a ceramic substrate, (b) is the AA sectional drawing. (a) is sectional drawing at the time of cutting the power module which concerns on one Embodiment of this invention in the surface containing the surface of a ceramic substrate, (b) is the AA sectional drawing and its rear view It is. (a) is sectional drawing at the time of cutting the power module which concerns on one Embodiment of this invention by the surface containing the surface of a ceramic substrate, (b) is the AA sectional drawing. (a) is a front view of the triple power module according to the embodiment of the present invention before the lead frame is detached, and (b) and (c) are a BB sectional view and an AA sectional view thereof. FIG. (a) is a front view of the power module which concerns on one Embodiment of this invention, (b) is the AA sectional drawing. (a) And (b) is the front view and rear view of the triple power module which concerns on one Embodiment of this invention, (c) is notched in order to demonstrate the state before lead frame separation FIG. It is a front view of the triple power module which concerns on one Embodiment of this invention. It is a figure for demonstrating the structure of the external cooling body attached to the power module which concerns on one Embodiment of this invention. It is a fragmentary sectional view of the junction part of the power module which concerns on one Embodiment of this invention, and an external cooling body. It is a fragmentary sectional view of the junction part of the power module which concerns on one Embodiment of this invention, and an external cooling body. It is a front view of the power module which concerns on one Embodiment of this invention. It is a fragmentary sectional view of the junction part of the power module of FIG. 15, and an external cooling body. It is a front view of the triple power module which concerns on one Embodiment of this invention. It is an equivalent circuit diagram of an inverter module. (a) is sectional drawing of the inverter which concerns on one Embodiment of this invention, (b) is AA sectional drawing for demonstrating the arrangement | positioning inside the cover. (a) is a front view of the power module which concerns on one Embodiment of this invention, (b) is sectional drawing at the time of cutting the power module in the surface containing the surface of a ceramic substrate. It is a figure for demonstrating the connection structure of the external terminal of a power module in the inverter module which concerns on one Embodiment of this invention. It is a front view of the inverter which concerns on one Embodiment of this invention, (b) is the BB sectional drawing. It is AA front view of the inverter of Fig.22 (a). It is sectional drawing of the inverter module which concerns on one Embodiment of this invention. It is sectional drawing of two types of cooling bodies of the state to which the power module which concerns on one form of this Embodiment was attached. It is an equivalent circuit diagram of an inverter module with a capacitor. (a) is the front view (partially notched) of the inverter which concerns on one Embodiment of this invention, (b) is the CC sectional drawing. (a) And (b) is AA sectional drawing and BB sectional drawing of the inverter of Fig.27 (a). It is an equivalent circuit diagram of an inverter module. (a) is the front view of the power module for implement | achieving the equivalent circuit of FIG. 29 based on one Embodiment of this invention, (b) is the AA sectional drawing. It is a perspective view of the power element used for the power module of FIG. It is a figure for demonstrating the internal structure of the power module of FIG. FIG. 31 is a perspective view of the power module of FIG. 30 with external cooling bodies attached on both sides. (a) is the power module which concerns on one Embodiment of this invention, (b) And (c) is the side view. It is sectional drawing of the conventional power module.

  Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

  First, the configuration of the power module according to the present embodiment will be described with reference to FIGS. 1 and 2. Here, IGBTs and free wheel diodes are used as power elements.

As shown in FIG. 1B, the power module 1 according to the present embodiment includes (1) a ceramic substrate 7 such as AlN having excellent thermal conductivity, and (2) one surface (the surface and the surface) of the ceramic substrate 7. The conductive patterns 8, 9, 10 (collector electrode 8, emitter electrode 9, gate electrode 10) bonded by chemical bonding via titanium-containing silver solder or oxygen, and (3) the other of the ceramic substrate 7. (4) Terminal mounting holes 3a, 4a, 5a, which are bonded to the entire region of the surface (referred to as the back surface) of the metal layer by chemical bonding via titanium-containing silver solder or oxygen. The other end portion (referred to as a fixed end portion) is soldered to each electrode pattern 8, 9, 10 so that one end portion (referred to as a connection end portion) formed with a protrusion protrudes from one side of the ceramic substrate 7. External terminals 3, 4, 5 (external collector terminal 3, external emitter terminal 4, external Gate terminals 5), (5) IGBTs 13 and free wheel diodes 14 joined to the collector electrodes 8 with solder 12, and (6) Power elements so that the free wheel diodes 14 are connected in parallel to the IGBTs 13 (see FIG. 2). And a bonding wire 16 electrically connected to the emitter electrode 9 or the gate electrode 10, and (7) a sealing resin 2 for protecting the surface side of the ceramic substrate 7 from the external environment. Furthermore, an auxiliary terminal 15 opposite to the external terminals 3, 4, 5 may be provided, which is used to uniformly press the ceramic substrate 7 against the mold during transfer molding.

  Now, as shown in FIG. 1 (c), the sealing resin 2 for protecting the surface side of the ceramic substrate 7 from the external environment includes power elements 13, 14, bonding wires 16, electrodes 8, 9, 10 and The periphery of the fixed ends of the external terminals 3, 4, 5 is filled. Further, the sealing resin 2 wraps around the back surface side of the ceramic substrate 7 and reaches the periphery of the conductor film 11 on the back surface side of the ceramic substrate 7. Thus, since the adhesive force between the ceramic substrate 7 and the sealing resin 2 is increased by covering the peripheral edge of the back surface side of the ceramic substrate 7 with the end 2a of the sealing resin 2, the element made of the sealing resin 2 The reliability of protection can be improved. Further, since the edge of the ceramic substrate 2 which is a brittle material is protected from mechanical shock by the sealing resin 2, not only the power elements 13 and 14 but also the reliability of protection of the ceramic substrate 7 is improved.

Here, as shown in FIG. 1A, only the region 11 a other than the peripheral portion of the conductor film 11 in close contact with the back surface of the ceramic substrate 7 is exposed to the outside from the sealing resin 2. This is because the exposed region 11a can be used as a soldering surface with the external cooling body. Further, the conductor film 11 used in this way is in close contact with the back surface of the ceramic substrate 2 because the dissimilar materials are in close contact with the front surface side of the ceramic substrate 2 (the close contact between the electrodes 8, 9, 10 and the ceramic substrate 2). , The contact between the collector electrode 8 and the power elements 13 and 14) is prevented. Therefore, deformation of the power module 1 is prevented.

  Thus, according to the structure according to the present embodiment, the heat from the power elements 13 and 14 can be effectively released through the ceramic substrate 7, and the element protection and the substrate by the sealing resin 2 can be performed. Improvement in the reliability of protection and prevention of deformation of the power module 1 can be achieved. Therefore, the reliability of the power module 1 is further improved.

  Here, although an AlN substrate is mentioned as an example of the ceramic substrate, other ceramic substrates using alumina, SiN, or the like as a substrate material may be used. In the above description, IGBTs and freewheeling diodes are used as power elements, but MOSs and power transistors may be used instead.

  Next, a method for manufacturing the power module of FIG. 1 will be described with reference to FIG. However, the ceramic substrate 7 used here is an AlN-DBC (direct bonded copper) on which a collector electrode 8, an emitter electrode 9, a gate electrode 10, a conductor film 11 and the like are previously formed by Cu or Al plated with Ni. ).

  First, as shown in FIG. 3A, the IGBT 13 and the free wheel diode 14 are joined to the collector electrode 8 with solder. Further, predetermined leads provided on the lead frame 19 are joined to the collector electrode 8, the emitter electrode 9 and the gate electrode 10 with solder. Here, the leads soldered to the electrodes 8, 9, 10 are leads to be the external terminals 3, 4, 5 described above. When the auxiliary terminal 15 used during the transfer molding process is provided on the ceramic substrate 7, a lead to be the auxiliary terminal is also formed on the lead frame 19, and the lead is provided at a predetermined location on the surface of the ceramic substrate 7. What is necessary is just to solder to the conductor pattern formed in (the edge part which opposes the edge part in which the external terminals 3, 4, and 5 were formed).

  Thereafter, as shown in FIG. 3B, the electrode pad on the freewheel diode 14 and the electrode pad on the IGBT 13 and the emitter electrode 9 or the gate electrode 10 are electrically connected by the Al wire 16 by wire bonding. . Thereby, an equivalent circuit as shown in FIG. 2 is realized.

  When the wire bonding is completed, the ceramic substrate 7 is accommodated in the cavity 23 of the mold as shown in FIG. At this time, since each lead of the lead frame 19 is firmly sandwiched between the parting surface of the upper mold 20 and the parting surface of the lower mold 21, the ceramic substrate 7 is positioned at an appropriate position in the cavity 23 of the mold. Positioned on. When the ceramic substrate 7 is positioned at an appropriate position in the cavity 23 of the mold, the region of the conductor film 11 on the back surface of the ceramic substrate 7 excluding the peripheral portion (the region to be the exposed region 11a) is in close contact with the inner wall of the mold. To do. This prevents the resin from entering the exposed region 11 a of the conductor film 11.

  In such a state, a resin is injected from the gate 22 to fill the cavity 23 with the resin. The resin used here does not matter whether it is thermosetting or thermoplastic. And after hardening the resin in the cavity 23 of a metal mold | die, a metal mold | die is opened and the molded object sticking to one type | mold is protruded. Thereby, as shown in FIG.3 (d), the molded object by which the surface side of the ceramic substrate 7 was sealed with the resin 2 is taken out. Thereafter, the unnecessary portion is removed from the molded body by cutting the frame portion of the lead frame 19. Thereby, the power module 1 as shown in FIG.3 (e) is completed.

  Here, only one power module 1 is manufactured, but as shown in FIG. 4A, a lead frame 19 in which a plurality of leads to be the external electrodes 3, 4, 5 and the auxiliary electrode 15 are formed. Is used to solder a plurality of (three as an example here) power element-mounted ceramic substrates 7 to the respective leads of the lead frame 19 in a single soldering step. In the transfer molding process, a plurality of ceramic substrates 7 connected by the lead frame 19 may be collectively sealed with resin. Of course, from the plurality of sealing resins 2 formed thereby, as shown in FIG. 4B, regions 11a excluding the peripheral portion of the conductor film 11 on the back surface side of the ceramic substrate 7 included therein, respectively. Is exposed.

  By the way, what was demonstrated above is only one structural example of the power module 1 which concerns on this Embodiment. Various changes can be made in practical use. Below are some specific examples of such changes. In addition, although the structure which concerns on each modification given here is applied to the separate power module 1 for convenience of explanation, it can also be applied to one power module 1 combining suitably as needed.

(A) Modification 1
In the configuration shown in FIG. 1, the external terminals 3, 4, and 5 are soldered to the electrodes 8, 9, and 10 on the surface of the ceramic substrate 7, but it is not always necessary to do so. For example, as shown in FIG. 5A, the ends of the electrodes 8, 9, 10 on the surface of the ceramic substrate 7 are extended, and the portions 8a, 9a, 10a protruding from the ceramic substrate 7 are connected to the external terminals 3, It may be used as 4,5. The same applies to the auxiliary terminal 15.

In this way, by integrating each electrode on the surface of the ceramic substrate 7 and the external terminal, as shown in FIG. 5B, between each electrode on the surface of the ceramic substrate 7 and the external terminal. No solder joints exist. Therefore, the number of solder joints can be reduced as compared with the case where each electrode on the surface of the ceramic substrate 7 and the external terminal are separated (see FIG. 1).
For this reason, the reliability of the power module 1 is improved. Moreover, since the soldering process can be reduced, the manufacturing process can be simplified.

(B) Modification 2
Since the external emitter terminal 4 and the external gate terminal 5 are not in direct contact with the power elements 13 and 14 which are heating elements, they are in contact with the ceramic substrate 7 for releasing heat from the power elements 13 and 14 to the outside. There is little need to be. Therefore, even if at least one of the external emitter terminal 4 and the external gate terminal 5 is arranged at a position away from the surface of the ceramic substrate 7, the saturation thermal resistance of the power module 1 hardly changes. As a specific example, FIG. 6B shows a configuration in which the external emitter terminal 4 and the external gate terminal 5 are arranged at positions away from the surface of the ceramic substrate 7. In this case, only the external collector terminal (or collector electrode) is in contact with the surface of the ceramic substrate 7. If such a three-dimensional arrangement is adopted, the emitter electrode and the gate electrode are not required as shown in FIG. 6A. Therefore, when all the external terminals are brought into contact with the electrodes on the ceramic substrate (FIG. 1). The area of the surface of the ceramic substrate 7 is sufficient as compared with FIG. For this reason, the size of the expensive ceramic substrate 7 can be reduced, and the production cost can be suppressed. However, as shown in FIG. 6C, the exposed region 11a of the conductor film 11 is also narrowed because the size of the ceramic substrate 7 is small.
The same applies to the case where one of the external emitter terminal 4 and the external gate terminal 5 is disposed at a position away from the surface of the ceramic substrate 7.

  When the external emitter terminal 4 is floated from the surface of the ceramic substrate 7, the external emitter terminal 4 is led to the electrode pads on the upper surfaces of the power modules 13 and 14, as shown in FIGS. They may be joined directly with solder 59 instead of the bonding wires 16. Thereby, since the bonding wire between each power module 13 and 14 and the external emitter terminal 4 becomes unnecessary, the inductance can be reduced by that amount. Similarly, when the external gate terminal 5 is floated from the surface of the ceramic substrate 7, the external gate electrode 5 is led to the electrode pad on the upper surface of the IGBT 13, and they are directly joined by solder instead of the bonding wire 16. It may be. Thereby, since the bonding wire between IGBT13 and the external gate terminal 5 becomes unnecessary, the inductance can be reduced by that amount.

(C) Modification 3
In general, a rapidly changing large current flows between the external emitter terminal 4 and the external gate terminal 5. For this reason, the voltage between the emitter and gate of the IGBT 13 varies depending on the resistance or inductance of the external gate terminal 5 and the external emitter terminal 4. In order to prevent such a phenomenon, as shown in FIG. 8A, the width of the external collector terminal 5 is narrowed to such an extent that no practical problem occurs, and the vicinity of the base of the external emitter terminal 4 (that is, The auxiliary emitter electrode 4 ′ that is thinner than the main body side may be branched from a position as close to the IGB 13 as possible. Alternatively, the auxiliary emitter terminal may be created by soldering a terminal thinner than the external emitter terminal 4 to the emitter electrode 9 separately.

  Such an auxiliary emitter electrode 4 'can take out the voltage between the emitter and gate of the IGBT 13 almost without fluctuation and supply it to an external control circuit. For this reason, control which supplies a stable voltage between the emitter-gate of IGBT13 can be performed.

  As described above, the configuration according to this modification example can be combined with the configuration according to any of the modification examples described above or below. Therefore, the configuration according to the modification example can also be applied to the configuration according to the modification example 2 described above. For example, as shown in FIGS. 9A and 9B, when the external emitter terminal 4 is applied to a configuration in which the external emitter terminal 4 is directly soldered to the power elements 13 and 14, the auxiliary emitter electrode 4 ′ is connected to the external emitter terminal. What is necessary is just to make it branch from the solder joint part 59 vicinity with IGBT13 instead of the root vicinity of 4. FIG.

  In FIGS. 8 and 9, the auxiliary emitter electrode 4 ′ and the external collector electrode 5 are longer than the external emitter electrode 4, but the length of each electrode 4 ′, 4, 5 is the same as that of the power module. What is necessary is just to determine suitably according to a real phase form.

(D) Modification 4
When the three external terminals are arranged in a line in the order of the external collector terminal 3, the external emitter terminal 4, and the external gate terminal 5, the power module 1 is connected between the external collector terminal 3 and the external emitter terminal 4. Maximum voltage is applied. For this reason, it is necessary to provide a sufficient space between the external collector terminal 3 and the external emitter terminal 4 so that no spatial discharge or the like occurs, which hinders the miniaturization of the power module 1. It was. When the three external terminals are arranged in a line in the order of the external collector terminal 3, the external emitter terminal 4, and the external gate terminal 5, the space discharge between the external collector terminal 3 and the external emitter terminal 4 is prevented. On the other hand, in order to reduce the size of the power module 1, as shown in FIGS. 34 (a), (b), and (c), the convex portions 30 that partition the external collector terminal 3 and the external emitter terminal 4 are sealed with resin. It is effective to integrally mold with 2. This is because the convex portion 30 functions as a shielding plate. A similar convex portion may be interposed between the external emitter terminal 4 and the external gate terminal 5. However, since the voltage (input signal to the IGBT 13) applied between the external emitter terminal 4 and the external gate terminal 5 is usually 15 V or less, the distance between the external emitter terminal 4 and the external gate terminal 5 However, it is unlikely that this will hinder the miniaturization of the power module 1. Therefore, there is little need to interpose a shielding plate between the external emitter terminal 4 and the external gate terminal 5.

  When the three external terminals are arranged in a line in the order of the external collector terminal 3, the external gate terminal 5, and the external emitter terminal 4, a power module is provided between the external collector terminal 3 and the external gate terminal 5. Since the maximum voltage of 1 is applied, the shielding plate 30 interposed between the external collector terminal 3 and the external gate terminal 5 may be integrally formed with the sealing resin 2.

  If the three external terminals are arranged in the order of the external emitter terminal 4, the external collector terminal 3, and the external gate terminal 5, the external collector terminal 3 and the external gate terminal 5 are connected between the external emitter terminal 4 and the external collector terminal 3. In each case, a shielding plate is required. For this reason, the three external terminals may be arranged in the order of the external collector terminal 3, the external emitter terminal 4, and the external gate terminal 5, or the external collector terminal 3, the external gate terminal 5, and the external emitter terminal 4 in this order. desirable.

(E) Modification example 5
In the above, the connection end portions of the three external terminals 3, 4, and 5 are protruded from one side of the ceramic substrate 7, but it is not always necessary to do so. The orientations of the connection end portions of the three external terminals 3, 4, and 5 may be appropriately determined according to the connection structure when the system is mounted. Therefore, for example, as shown in FIGS. 20A and 20B, the connection end of the external emitter terminal 4 may protrude in the direction opposite to the connection end of the external collector terminal 3. In this case, since the external emitter terminal 4 also serves as the auxiliary terminal 15, it is not necessary to provide the auxiliary terminal 15 separately.

(F) Modification 6
When a power module is mounted on an inverter or the like, a plurality of power modules are used as a set. In order to cope with such a usage pattern, a plurality of ceramic substrates 7 arranged in a line may be sealed with one sealing resin 2 as shown in FIG. In order to do this, as shown in FIG. 10C, a lead frame 19 having a plurality of sets of leads to be external terminals 3, 4, 5 (here, further including the auxiliary emitter terminal 4 ') is provided. A necessary number of ceramic substrates 7 may be soldered and the ceramic substrates 7 may be insert-molded. In this case, of course, as shown in FIG. 10 (b), the region 11 a excluding the peripheral portion of the conductor film 11 on the back surface side of the plurality of ceramic substrates 7 is exposed from the sealing resin 2.

  By adopting such a structure, the necessary number (here, three as an example) of the power modules 1 according to the present embodiment can be handled as an integrated module. However, as shown in FIG. 10A, when a plurality of ceramic substrates 7 arranged in a row are sealed with one sealing resin 2, the width d of the sealing resin is larger than that of the power module alone. For this reason, when thermal stress arises, the curvature larger than a power module single-piece | unit will arise in sealing resin. Therefore, in order to suppress the deformation of the entire module, as shown in FIG. 11, the individual sealing resin 2 that seals the individual ceramic substrates 7 and the connecting portion 31 that connects them are integrally formed. It may be. In addition, the shape, position, and number of the connecting portions 31 that connect the sealing resins 2 may be determined as appropriate.

(G) Modification example 7
In any of the configurations described above, the external cooling body is mounted on one side of the power module 1. However, the external cooling body can be mounted on both sides of the power module 1. Here, a power module that realizes the equivalent circuit shown in FIG. 29 will be described as an example.

  As shown in FIGS. 30 (a) and 30 (b), this power module has two opposing ceramic substrates 7, 7 ′ and opposing surfaces (surfaces on the other ceramic substrate side) of the ceramic substrates 7, 7 ′. The formed electrodes and the conductor films 11 and 11 ′ formed on the outer surface (surface opposite to the facing surface) of each ceramic substrate 7 and 7 ′ are interposed between the facing surfaces of the two ceramic substrates 7 and 7 ′. Power elements 13 and 14, sealing resin 2 for protecting the opposing surface side of the two ceramic substrates 7 and 7 ′ from the external environment, external terminals 3, 4, 5 (external collector terminal 3, external emitter terminal 4 And an external gate terminal 5).

  As shown in FIGS. 31 (a) and 31 (b), the power elements 13, 14, 13A, 14A used here are also provided with soldering electrode pads 13G, 13K, 14K on the upper surface. Specifically, on the upper surface of the IGBT 13 and the upper surface of the free wheel diode 14, emitter intermediate electrodes 13E and 14K are formed inside the peripheral FLR (Field Limited Ring). Thus, by arranging the emitter intermediate electrode while avoiding the FLR having a high electric field concentration, the emitter electrode can be kept away from such FLR. For this reason, disturbance of the electric field is prevented, and the device breakdown voltage is protected. A gate intermediate electrode 13G is further formed on the upper surfaces of the IGBTs 13 and 13A, and the emitter intermediate electrode 13E has a shape that does not cover the region where the gate intermediate electrode 13G is formed (region on the central gate electrode) (here, (C shape). The emitter intermediate electrodes 13E and 14K and the gate intermediate electrode 13G are made of a material (tungsten W, molybdenum Mo, etc.) whose linear expansion coefficient is close to that of Si, and silicon by soldering, low-temperature pressure bonding, or the like. It is desirable that it is joined to.

  As shown in FIG. 32 (a), a collector electrode 8A and a gate electrode 10A are formed on the facing surface of one of the two ceramic substrates 7, 7 'facing each other. . The external gate electrode 5 is connected to the gate electrode 10A. The collector electrode 8A is mounted with an IGBT 13A and a free wheel diode 14A, and is connected to an output terminal (U, V, W) and an auxiliary emitter electrode 4 ′. The collector electrode 8A also functions as an emitter electrode of the IGBT 13 and FWD 14 mounted on the other ceramic substrate 7.

  On the opposite surface of the other ceramic substrate 7, a collector electrode 8, an emitter electrode 9, and a gate electrode 10 are formed as shown in FIG. The gate electrode 10 is connected to the external gate electrode 5A. Further, the collector electrode 8 is mounted with an IGBT 13 and a free wheel diode 14 and is connected to an external collector terminal 3. Further, the emitter electrode 9 is connected to an external emitter electrode 4A and an auxiliary emitter electrode 4A ′.

  When the facing surfaces of these ceramic substrates 7 and 7 'are made to face each other, as can be seen from FIG. 32 (b), the upper surfaces of the power elements 13A and 14A of one ceramic substrate 7' are the emitters of the other ceramic substrate 7. The upper surface of the power elements 13 and 14 of the other ceramic substrate 7 faces the collector electrode 8A of one ceramic substrate 7 '. Therefore, the equivalent circuit shown in FIG. 29 is realized by joining these facing members together with solder 59 as shown in FIG. 30 (b). By adopting such a joining structure, the power elements 13A and 14A mounted on one ceramic substrate 7 ′ can be used not only from the exposed region 11a of the conductor film 11 of the ceramic substrate 7 ′ on which the power elements 13A and 14A are mounted. Heat is also radiated from the exposed region 11 a of the conductor film 11 of the other ceramic substrate 7 through the solder 59. Similarly, the power elements 13 and 14 mounted on the other ceramic substrate 7 are not only from the exposed region 11a of the conductor film 11 of the ceramic substrate 7 on which they are mounted, but also to other ceramic substrates via the solder 59. The heat is also radiated from the exposed region 11 a of the conductor film 11. For this reason, as shown in FIG. 33, by mounting the external cooling body 23 on both sides of the power module, heat from the power element can be efficiently released to the outside. Thereby, electrical resistance and thermal resistance are reduced.

  When such a structure is employed, it is desirable to form the sealing resin with a thermosetting resin that is easily filled even in a narrow region. This is because the distance between the opposing surfaces of the two ceramic insulating substrates 7 and 7 'is about 1.5 mm.

  Next, the structure of the external cooling body 23 suitable for the power module 1 according to the present embodiment will be described.

  As shown in FIG. 12, the external cooling body 23 is provided with a straight type fin portion 23B on one side and a power module mounting portion 23A on the opposite side. The external cooling medium 23 needs to be formed of a material that is excellent in thermal conductivity and that does not corrode by contact with a refrigerant, such as Al, Cu, Al—SiC composite material, and Cu—CuO composite material. It is not always necessary to be made of a single material. For example, when the fin portion 23B is attached to a housing or the like, it is desirable to form the power module mounting portion 23A and the fin portion 23B with different materials. Specifically, the power module mounting portion 23A is formed of an Al—SiC composite material whose thermal expansion coefficient approximates that of a ceramic substrate, and the fin portion 23B serving as a fixing portion is more easily plastically deformed than the Al—SiC composite material. It is desirable to form with Al. With such a structure, the stress generated between the housing and the power module mounting portion 23A is alleviated by Al.

  Now, as shown in FIG. 12, the power module mounting portion 23A of the external cooling body 23 has a convex portion 23a having a surface (soldering surface) facing the exposed region 11a of the conductor film 11 of the power module 1. Three or more are formed so as not to line up. The convex portion 23a has a slight margin (excess solder escape path) in a concave portion (see FIG. 1C) formed by the exposed surface 11a of the conductor film 11 of the power module 1 and the resin end portion 2a surrounding the exposed surface 11a. It fits in with a gap of about For this reason, the power module 1 can be easily positioned with high accuracy with respect to the external cooling body 23 by fitting the convex portions 23a and the concave portions. The ability to accurately position the power module 1 with respect to the external cooling body 23 is advantageous for external terminal connection with other power modules attached to the same external cooling body 23 (described later).

  The soldering surface of the protrusion 23a formed on the power module mounting portion 23A of the external cooling body 23 may be flat, or as shown in FIG. 13, one or more protrusions 23a ′ having an appropriate height are formed. May be. However, when one or more protrusions 23a ′ are formed, the exposed region 11a of the conductor film 11 of the power module 1 and the soldering surface of the protrusion 23a of the power module mounting portion 23A are always at the height of the protrusion 23a. Therefore, it is advantageous from the viewpoint of improving the bonding reliability between the power module 1 and the external cooling body 23. The vertical and horizontal widths of the protrusions 23a ′ formed on the upper surface of the convex portion 23a of the power module mounting portion 23A (the width of the cross section when cut by a plane parallel to the joint surface of the convex portion 23a) are the same as those of the power module mounting portion 23A. What is necessary is just to determine according to the area etc. of the upper surface of the convex part 23a.

Then, when it is necessary to further improve the bonding reliability between the power module 1 and the external cooling body 23, the gap between the sealing resin 2 of the power module 1 and the external cooling body 23 is shown in FIG. An adhesive 64 such as an epoxy resin may be injected from the outside. By doing so, the stress applied to the solder layer 25 between the exposed region 11a of the conductor film 11 of the power module 1 and the upper surface of the convex portion 23a of the external cooling body 23 is relaxed. The bonding reliability with the body 23 can be further improved. A power module using a ceramic substrate (AlN, alumina, SiN) having a difference in thermal expansion coefficient from silicon of about 3 × 10 −6 to 18 × 10 −6 (1 / ° C.) is shown in FIG. It has been confirmed by experiments that a connection life of two orders of magnitude or more can be obtained when bonded to an external cooling body.

  Alternatively, one or more attachment portions with hubs may be integrally formed in the sealing resin 2 of the power module 1 and the attachment portions with hubs may be screwed to the external cooling body 23. Of course, in this case, it is necessary that a screw hole be formed in the external cooling body 23 at a position corresponding to the hub of the mounting portion with the hub. Here, the position of the mounting portion with the hub in the sealing resin 2 is not limited. However, when a plurality of mounting portions with the hub are provided, the mounting portion with the hub has a positional relationship in which force is evenly applied to the sealing resin 2 when the screw is fastened. It is desirable to arrange For example, when the outer shape of the sealing resin 2 of the power module 1 is substantially rectangular, as shown in FIG. 15, a hub-attached mounting portion 27 is integrally formed at each corner of the sealing resin 2 of the power module 1. It is desirable. When a plurality of such substantially rectangular sealing resins 2 are connected, as shown in FIG. 16, the hub-attached mounting portion 17 of the corner portion is shared as a connecting portion between the adjacent sealing resins 2. You can also Further, as shown in FIG. 17, the external cooling body 23 to which the power module 1 shown in either of FIGS. 15 and 16 is attached is associated with the hub hole 27a of each hub-attached portion 27, and fixed screws. The screw hole 29 to which 28 is fastened needs to be cut.

  In addition, when the sealing resin 2 of the power module 1 is screwed to the external cooling body 23 as described herein, the power module 1 is firmly fixed to the external cooling body 23 by this screw. It is not necessary to solder the conductor film 11 of the power module 1 and the convex portion 23a of the external cooling body 23. Therefore, instead of the solder 25, a high thermal conductive grease, a high thermal conductive sheet, or the like is interposed between the conductor film 11 of the power module 1 and the convex portion 23 a of the external cooling body 23, so that the power element and the external cooling body 23 are disposed. The thermal resistance between the two may be reduced.

  In the above, the external cooling body 23 having the straight fin portion 23B is taken as an example of the external cooling body of the power module 1 according to the present embodiment, but the power module 1 according to the present embodiment is Mounting to an external cooling body having a fin portion of a shape other than the mold and mounting to an external cooling body with a built-in heat pipe are also possible. For example, in the case where the cooling medium is passed through an external cooling body having fin portions 23B formed therein, as shown in FIG. A power module mounting portion 23A may be provided on both sides of the fin portion 23B formed on the side. According to such a cooling body, the same power module as the cooling body having a plurality of power module mounting portions only on one side can be mounted in a smaller size. For this reason, the system can be miniaturized. Similarly, when mounting on an external cooling body with a built-in heat pipe, as shown in FIG. 25A, power module mounting portions 23A are formed on both sides of the external cooling body 23 with a built-in heat pipe 65. can do.

  Next, a system in which the power module 1 described above is mounted will be described. Here, a three-phase inverter having an inverter module that realizes the equivalent circuit shown in FIG. 18 is taken as an example.

  As shown in FIG. 19B, the inverter according to the present embodiment is mounted on an inverter module, a case 60 attached to the inverter module, a printed wiring board 54 attached to the upper surface of the case 60, and the printed wiring board 54. The control microcomputer and other surface mount components 57 and 58 are provided.

  As shown in FIG. 19A, the inverter module includes an external cooling body 23, six power modules 1 in which an external gate electrode 5 is connected to a control microcomputer, and three output terminals to which loads such as motors are connected. U, V, W, and two power terminals P, N connected to a power source. The external cooling body 23 is a refrigerant from the supply port 62 to the discharge port 63 through six power module mounting portions 23A arranged in two rows inside the case 60, and fluid paths 23b along the rows of the power module mounting portions 23A. Have two rows of fin portions 23B. The six power modules 1 are soldered to the convex portion 23a of the power module mounting portion 23A of the two rows of power module mounting portions 23A. For this reason, the six power modules 1 are arranged in two rows by three. In such a state, the connection end of the external emitter 4 of the power module 1 in one row and the connection end of the external collector 3 of the power module 1 in the other row face each other at a predetermined interval. . That is, the connection ends of the external terminals to be connected to the common output terminals U, V, and W face each other at a predetermined interval. Further, the connection end portions of the external collectors 3 of all the power modules 1 in one row are arranged in a row, and the connection end portions of the external emitters 4 of all the power modules 1 in the other row are arranged in a row. That is, the connection end portions of the external terminals to be connected to the common power supply terminals P and N are arranged in a line. Therefore, the equivalent circuit of FIG. 18 can be realized with a simple connection structure with a small wiring inductance. Here, the inverter module is configured by using a plurality of single power modules, but instead of a plurality of power modules constituting each row, a module in which power modules for one row are integrated (see FIG. 10 and the like). ) May be used.

  The same can be said for the case where the power module having the structure according to the modification 4 is used. For example, as shown in FIG. 21, in the case where three power modules are used in one row (upper arm) and only the connection end of the external emitter terminal 4 is opposite to the external collector terminal 3, the other row A power module in which the connection end of the external emitter terminal 4 and the connection end of the external gate terminal 5 (here, also the connection end of the auxiliary emitter terminal 4 ′) are opposite to the external collector terminal 3 is connected to the (lower arm). If three are used, connection ends of external terminals to be connected to the common output terminals U, V, and W can be overlapped between the upper arm and the lower arm. Further, the connection end portions of the external terminals to be connected to the common power supply terminals P and N can be arranged in a line on both the upper and lower sides. Accordingly, in this case as well, the equivalent circuit of FIG. 18 can be realized with a simple connection structure. In this case, from the viewpoint of downsizing the inverter, when both ends of the upper and lower arms are aligned, the external emitter terminal 4 of the upper arm power module and the external collector terminal 3 of the lower arm power module are overlapped. It is desirable.

  The inverter having such a structure is suitable for installation in a space with a deep space such as a gap but a small interval, but is not suitable for installation in a space with a shallow depth. Therefore, when there is a request for installation in a shallow space or the like, it is desirable that the inverter module has a structure as shown in FIG.

  As shown in FIG. 22 (a), this inverter module has a pair of external cooling bodies 23 sandwiching a plurality of power modules 1 so that external terminals 2, 3, and 4 protrude outside from one side. ing. The pair of external cooling bodies 23 are fixed by screws 40 or welding in a state where a plurality of power modules 1 are sandwiched, but on the opposing surfaces of the respective external cooling bodies 23, as shown in FIG. A recess 18 having an L-shaped cross section is formed in which the sealing resins 2 of the plurality of power modules 1 are accommodated in a line. On the bottom surface of the recess 18, as shown in FIG. 22 (b), a plurality of protrusions that fit into the recess formed by the exposed surface 11 a of the conductor film 11 of the power module 1 and the resin end 2 a surrounding it. 23A are formed in a row, and the power module 1 is soldered to the upper surfaces of these convex portions with the external terminals 3, 4, 5 directed in a predetermined direction. By overlapping the opposing surfaces of the pair of external cooling bodies 23 as shown in FIG. 22A, the external emitter terminal 4 of the power module 1 on the one external cooling body 23 side and the other The external collector terminal 3 of the power module 1 on the external cooling body 23 side faces. That is, the external terminals 3 and 4 connected to the common output terminals U, V, and W are opposed to each other. For this reason, it is only necessary to sandwich the output terminal between the external terminals 3 and 4 connected to the common output terminals U, V and W and fix them with a set of bolts and nuts 32.

  However, with such a structure, as shown in FIG. 22A, when external terminals connected to the power supplies P and N having opposite polarities face each other, as shown in FIG. It is necessary to interpose a shielding sheet.

  The pair of external cooling bodies 23 used here are fixed to each other by screws 40 or welding, but it is not always necessary to do so. For example, the overlapping state of the pair of external cooling bodies 23 is maintained by fixing the individual external cooling bodies 23 to the mounting housing 34 with screws 36, fixing the individual external cooling bodies 23 to the cooling medium supply device, or the like. You may be made to do.

  Further, the shape of the fin portion of the external cooling body 23 used here is not limited. However, as shown in FIG. 22 (b), the fin portion 23A having a flow path 37 for guiding the cooling medium from one to the other as shown in FIG. When used, the fin portion 23A is directly fixed to the mounting case 34 with screws 36. As shown in FIG. 24, when the straight fin portion 23A is used, the external terminals 3, 4, 5 side According to the shape of the fin portion 233B, the fin portion 23A is fixed to the attachment housing 34 via the O-ring 35 that prevents the cooling medium from leaking to the attachment housing 34. It is desirable to change

  By the way, a jump voltage (-Ldi / dt) due to an intermittent current is superimposed on a DC voltage between the collector and emitter of the IGBT of the three-phase inverter. In order to eliminate this, as shown in FIG. 26, a DC reactor and a smoothing capacitor 41 are often added to the inverter module. Of course, such a smoothing capacitor or the like can be connected to the inverter module on which the power module 1 according to the present embodiment is mounted. As an example, an inverter configuration example when a capacitor is connected to an inverter module in which the triple power module 1 (see FIG. 10) according to the modified example 6 is attached on both sides of the external cooling body 23 shown in FIG. Are shown in FIGS.

  As shown in FIGS. 27 (a) and 27 (b), this inverter does not apply force to the inverter module, the smoothing capacitor 41, the case 55 to which the inverter module and the smoothing capacitor 41 are fixed, the printed wiring board 54, and the inverter module. In addition, a reinforcing rod 56 for maintaining a distance between the printed circuit board 54 and the bottom surface of the case 55, a control microcomputer mounted on the printed wiring board 54, and other surface mount components 57 and 58 are provided. In addition to these, a current sensor attached to the output terminal may be further included.

  In the inverter module used here, as shown in FIG. 28 (b), the emitter terminal 4 of the upper arm (the left triple power module 1 in the figure) and the collector of the lower arm (the right triple power module in the figure). The terminals 3 are each short-circuited by a short-circuit rod 49. Then, output wirings U, V, W (only the output terminal W is shown here) are connected to one end of each short-circuit rod 49, respectively. Further, the auxiliary emitter terminal 4 ′ and the external gate terminal 5 of each power module 1 pass through the through hole 52 formed in one power supply terminal P, and are soldered to the through hole of the printed circuit board 54, or the printed circuit board 54. It is inserted in the connector provided in.

  Further, the two power supply terminals P and N of the inverter module used here are plate-shaped and are in close contact with each other while maintaining an insulating state with the insulating plate 48 interposed therebetween. With such an arrangement, the inflow current and the outflow current are almost reversed, so that the wiring inductance can be reduced by the effect of mutual inductance. For this reason, the compensation circuit (snubber circuit) can be omitted.

  Then, as shown in FIGS. 28A and 28B, one of the two power terminals is directly fixed to one terminal 43 of the smoothing capacitor 41 with a screw 44, and the other power terminal. N is directly fixed to the other terminal 46 of the capacitor 41 with a screw 47. By adopting such a connection structure, the length of the wiring between the smoothing capacitor and each IGBT can be shortened and the cross-sectional area thereof can be increased. Thereby, wiring inductance and DC resistance are suppressed.

  Thus, the wiring structure can be improved.

  In the above, for convenience of explanation, any one of the above-described power modules is used for the inverter, but other types of the above-described power modules may be used. For example, although the triple power module according to Modification 6 is used for the inverters shown in FIGS. 27 and 28, the above-described other types of power modules may be used.

DESCRIPTION OF SYMBOLS 1 ... Power module, 2 ... Sealing resin, 2a ... End part of sealing resin, 3 ... Collector terminal, 4 ... Emitter terminal, 4 '... Auxiliary emitter terminal, 5 ... Gate terminal, 7 ... Ceramic substrate, 8 ... Collector electrode, 9 ... Emitter electrode, 10 ... Gate electrode, 11 ... Conductive film, 11a ... Exposed portion of conductor film, 13, 14 ... Power element, 23 ... Cooling body, 26 ... Protrusion for adjusting thickness of solder layer, 27 ... Mounting part, 30 ... Shielding plate, 31 ... Connecting part

Claims (11)

  1. A first power module having a first power element that converts a direct current into an alternating current by a switching operation;
    A second power module having a second power element that converts a direct current into an alternating current by a switching operation;
    A cooling body having a flow path through which a cooling refrigerant flows, and
    The first power module, the a first wiring connected to one electrode of the first power device, and a second wiring connected to the other electrode of the first power device, the first power device A first resin sealing material that seals
    The second power module, the third wiring that is provided separately from the first distribution Sen及 beauty the second wiring is connected to one electrode of the second power device, the second power and a fourth wiring that is provided separately from the first distribution Sen及 beauty the second wiring is connected to the other electrode of the element, the first resin molding with sealing the second power device A second resin sealing material provided separately from the stop material,
    Wherein the first distribution line, wherein the first power element arranged side surface having a first exposed surface exposed from the first resin sealing material on the other side,
    Said second wiring, said the first power element arranged side surface has a second exposed surface which is exposed from the first resin sealing material on the other side,
    The third wiring, the the second power element arranged side surface has a third exposed surface exposed from the second resin sealing material on the other side,
    The fourth wiring, said the second power element arranged side surface and a fourth exposed surface exposed from the second resin sealing material on the other side,
    The cooling body includes a first cooling body having a region facing the first exposed surface and a region facing the third exposed surface, and the first power module and the second power module sandwiched between the first power module and the first power module. A second cooling body facing the cooling body and having a region facing the second exposed surface and a region facing the fourth exposed surface;
    The side portion of the first wiring, the area of the first exposed surface is formed so as remote smaller by the cross-sectional area in a plane direction parallel to the first exposed surface including an outer edge portion of the first wire,
    A side portion of the second wiring is formed such that an area of the second exposed surface is smaller than a cross-sectional area in a plane direction parallel to the second exposed surface including an outer edge portion of the second wiring,
    The side portion of the third wiring is formed such that an area of the third exposed surface is smaller than a cross-sectional area in a plane direction parallel to the third exposed surface including an outer edge portion of the third wiring,
    The side portion of the fourth wiring is formed such that an area of the fourth exposed surface is smaller than a cross-sectional area in a plane direction parallel to the fourth exposed surface including an outer edge portion of the fourth wiring,
    The first resin sealing material is formed to cover a side portion of the first wiring and a side portion of the second wiring,
    The second resin sealing material is an inverter formed to cover a side portion of the third wiring and a side portion of the fourth wiring.
  2. A first power module having a first power element that converts a direct current into an alternating current by a switching operation;
    A second power module having a second power element that converts a direct current into an alternating current by a switching operation;
    A cooling body having a flow path through which a cooling refrigerant flows, and
    The first power module, the a first wiring connected to one electrode of the first power device, and a second wiring connected to the other electrode of the first power device, the first power device A first resin sealing material that seals
    The second power module, the third wiring that is provided separately from the first distribution Sen及 beauty the second wiring is connected to one electrode of the second power device, the second power and a fourth wiring that is provided separately from the first distribution Sen及 beauty the second wiring is connected to the other electrode of the element, the first resin molding with sealing the second power device A second resin sealing material provided separately from the stop material,
    The cooling body includes a first cooling body with each said first wiring facing the region and the third wiring area opposed to the first across the first power module and the second power module a second cooling body with the second wiring and the facing region and the fourth wiring and the area facing with facing the cooling body, respectively,
    In the side portion of the first wiring, the area of the surface opposite to the surface on which the first power element is disposed is parallel to the outermost surface of the opposite surface including the outer edge portion of the first wiring. Formed to be smaller than the cross-sectional area in the plane direction ,
    In the side portion of the second wiring, the area of the surface opposite to the surface on which the first power element is disposed is parallel to the outermost surface of the opposite surface including the outer edge portion of the second wiring. Formed to be smaller than the cross-sectional area in the plane direction ,
    In the side portion of the third wiring, the area of the surface opposite to the surface on which the second power element is disposed is parallel to the outermost surface of the opposite surface including the outer edge portion of the third wiring. Formed to be smaller than the cross-sectional area in the plane direction ,
    In the side portion of the fourth wiring, the area of the surface opposite to the surface on which the second power element is disposed is parallel to the outermost surface of the opposite surface including the outer edge portion of the fourth wiring. Formed to be smaller than the cross-sectional area in the plane direction ,
    The first resin sealing material is formed to cover a side portion of the first wiring and a side portion of the second wiring,
    The second resin sealing material is an inverter formed to cover a side portion of the third wiring and a side portion of the fourth wiring.
  3. An inverter according to claim 1 or 2,
    The plurality of power modules each have a terminal for transmitting the direct current,
    The resin encapsulant forms a protruding portion that protrudes to the outside than the first sandwiched wiring and the second wiring space,
    The terminal is an inverter that protrudes to the outside of the resin sealing material through the protruding portion of the resin sealing material.
  4. The inverter according to any one of claims 1 to 3,
    Wherein the first wiring is opposite to the first conductive film mounting the power element, a first substrate made of ceramic for holding the first conductor layer, and the first conductive film across the first substrate A second conductor film formed on the side,
    The second wiring is opposite to the third conductive film mounting the power element, and a second substrate made of a ceramic which holds the third conductive film, and the third conductive film across the first substrate And an inverter having a fourth conductor film formed on the side.
  5. An inverter according to claim 4, wherein
    The second conductive layer of the first wiring is connected to the first cooling member via a solder,
    It said fourth conductive film of the second wiring, the inverter connected to said second cooling member via solder.
  6. An inverter according to any one of claims 1 to 5,
    Comprising a smoothing capacitor for smoothing the direct current,
    A power supply terminal for electrically connecting the smoothing capacitor and the power module;
    The cooling body is disposed on a side of the smoothing capacitor;
    The power supply terminal extends from the smoothing capacitor side to the upper portion of the cooling body, and includes a plate-like positive power supply terminal and a plate-like negative power supply terminal, and further includes the positive power supply terminal and the negative electrode side. An inverter having an insulating member sandwiched between a power supply terminal.
  7. An inverter according to claim 6, wherein
    The power supply terminal is an inverter directly connected to the smoothing capacitor.
  8. An inverter according to claim 6 or 7,
    A printed wiring board for driving the power module;
    The said printed wiring board is an inverter arrange | positioned in the position facing the said cooling body and the said power module.
  9. An inverter according to claim 8, wherein
    A case for housing the cooling body and the power module;
    And a reinforcing member for supporting the printed wiring board on the case.
  10. An inverter according to any one of claims 1 to 9,
    The first power module has a first collector terminal for transmitting the direct current to the first power element, and a first gate terminal for transmitting a gate signal to the first power element,
    The first collector terminal protrudes from a space sandwiched between the first cooling body and the second cooling body,
    The inverter in which the first gate terminal protrudes from a space between the first cooling body and the second cooling body and protrudes in a direction opposite to a protruding direction of the first collector terminal.
  11. An inverter according to claim 10, wherein
    The second power module has a second collector terminal for transmitting the direct current to the second power element, and a second gate terminal for transmitting a gate signal to the second power element,
    The second collector terminal protrudes from a space sandwiched between the first cooling body and the second cooling body and protrudes in parallel with the protruding direction of the first collector terminal,
    The inverter, wherein the second gate terminal protrudes from a space sandwiched between the first cooling body and the second cooling body and protrudes in a direction opposite to a protruding direction of the second collector terminal.
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JP5327646B2 (en) 2009-06-24 2013-10-30 株式会社デンソー Motor with built-in electronic circuit
US9888613B2 (en) 2010-11-02 2018-02-06 Mitsubishi Electric Corporation Power module for electric power steering and electric power steering drive control apparatus using the same
CN103229295B (en) * 2010-11-29 2016-01-06 丰田自动车株式会社 Power plant module
WO2012108048A1 (en) * 2011-02-10 2012-08-16 三菱電機株式会社 Power conversion device
JP2013232445A (en) * 2012-04-27 2013-11-14 Toshiba Corp Semiconductor device
DE102015104990A1 (en) * 2015-03-31 2016-10-06 Infineon Technologies Austria Ag A compound semiconductor device having a scan lead
JP6308978B2 (en) * 2015-06-16 2018-04-11 三菱電機株式会社 Semiconductor device
KR101663558B1 (en) * 2016-05-23 2016-10-07 제엠제코(주) Semiconcuctor chip package having destruction preventing structure
CN110537258A (en) * 2017-04-24 2019-12-03 罗姆股份有限公司 Semiconductor device

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