CN102254886A - Lead bonding-free IGBT (Insulated Gate Bipolar Translator) module - Google Patents

Lead bonding-free IGBT (Insulated Gate Bipolar Translator) module Download PDF

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CN102254886A
CN102254886A CN2011102224840A CN201110222484A CN102254886A CN 102254886 A CN102254886 A CN 102254886A CN 2011102224840 A CN2011102224840 A CN 2011102224840A CN 201110222484 A CN201110222484 A CN 201110222484A CN 102254886 A CN102254886 A CN 102254886A
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module
free
lead
igbt
plate
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CN2011102224840A
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刘国友
覃荣震
黄建伟
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株洲南车时代电气股份有限公司
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Publication of CN102254886A publication Critical patent/CN102254886A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]

Abstract

The invention discloses a lead bonding-free IGBT (Insulated Gate Bipolar Translator) module, which comprises a substrate, a liner plate, a power semiconductor chip, a collector terminal and a lead-free electrode run-off plate, wherein the liner plate is welded on the substrate; the power semiconductor chip and the collector terminal are welded on the liner plate; the lead-free electrode run-off plate is a composite bus bar or a multi-layer printed circuit board, is arranged on the power semiconductor chip, and is used for realizing electrode interconnection and run-off of the power semiconductor chip and supplying current and a radiating channel for the module; electrodes of the power semiconductor chip are interconnected through a connecting terminal on the lead-free electrode run-off plate; and silver is taken as a connecting medium. According to the lead bonding-free IGBT module, lead bonding is eliminated, parasitic inductance is reduced, the reliability is enhanced, encapsulating materials and parts are reduced, the module structure is more compact, double-side heat radiation is realized, the heat resistance is reduced, the encapsulating process is simplified and the module cost is lowered.

Description

一种免引线键合IGBT模块 A no wire bonding IGBT module

技术领域 FIELD

[0001] 本发明涉及一种功率半导体模块,特别是一种基于绝缘栅双极晶体管(IGBT)模块。 [0001] The present invention relates to a power semiconductor module, in particular based on insulated gate bipolar transistor (IGBT) module.

背景技术 Background technique

[0002] 绝缘栅双极晶体管(IGBT)具有通态压降低、电流容量大、输入阻抗高、响应速度快和控制简单的特点,被广泛用于工业、信息、新能源、医学、交通、军事和航空领域。 [0002] The insulated gate bipolar transistor (IGBT) having a state voltage drop, high current capacity, high input impedance and fast response characteristics and control simple, widely used in industry, information technology, energy, medicine, transportation, military and aviation.

[0003] 对于焊接式IGBT模块而言,芯片正面互连普遍采用引线6'(粗铝线)键合的方式,如图1所示。 [0003] For welded IGBT modules, the chip front side interconnect manner commonly used lead 6 '(crude aluminum) is bonded, as shown in FIG. 利用引线6'将功率半导体芯片正面电极引出至衬板正面图形化金属化面31'上,从而实现功率半导体芯片的互连,再通过集电极端子7',发射极端子8,和栅极端子9'引出至模块外部。 By wire 6 'of the power semiconductor chip front electrode lead to the front surface metallization pattern plate 31', so as to interconnect the power semiconductor chip, and then through the collector terminal 7 ', the emitter terminal 8, and a gate terminal 9 'drawn out to the outside of the module.

[0004] 因此,焊接式IGBT模块内部有很多引线键合点,即使随着模块封装技术的持续进步和引线键合参数的不断优化,键合点的可靠性不断得到提高,但模块内部有1000多个引线键合点,键合点仍然是可靠性的一个薄弱环节。 [0004] Thus, the internal IGBT module welded wire bonding many points, even with the continuous optimization module packaging technology continues to progress and wire bonding parameter, the reliability of the bond site is improving, but a plurality of internal modules 1000 wire bond pads, bond points is still a weak link reliability.

发明内容 SUMMARY

[0005] 本发明所要解决的技术问题是,针对现有技术不足,提供一种免引线键合IGBT模块,采用免引线电极引出板对IGBT模块内部各功率半导体芯片的电极直接进行互连并引出至模块外部,免除引线键合;同时,将多个外部电极端子集成到一个免引线电极引出板中。 [0005] The present invention solves the technical problem, for the deficiencies of the prior art, to provide a wire bonding free IGBT modules using the lead-free electrode lead-out electrode plate of the IGBT module internal power semiconductor chip and lead directly interconnected to the outside of the module, eliminating the wire bonding; the same time, the integration of a plurality of external electrode terminal to the electrode lead-out lead plates Free. 降低寄生电感,提高可靠性;实现双面散热,降低热阻;简化封装工艺,降低模块成本。 Reduce the parasitic inductance, improving reliability; dual-sided cooling, reduce the thermal resistance; simplify the assembly process and the cost of the module.

[0006] 为解决上述技术问题,本发明所采用的技术方案是:免引线键合IGBT模块包括基板、焊接在基板上的衬板、焊接在衬板上的功率半导体芯片和集电极端子,还包括免引线电极引出板;所述衬板的上下表面均为单一金属化面;所述免引线电极引出板为复合母排或多层印制电路板,设置在功率半导体芯片上面;所述功率半导体芯片包括IGBT芯片和FRD 芯片,IGBT芯片背面的集电极及FRD芯片背面的阴极通过衬板正面的单一金属化面实现互连;所述集电极端子焊接在衬板正面的单一金属化面上,将IGBT芯片背面的集电极及FRD 芯片背面的阴极互连并引出至模块外部。 [0006] To solve the above technical problem, the technical solution employed in the present invention: Free wire bonding IGBT module comprising a substrate, on the substrate plate welding, the welding power and the collector terminal of the semiconductor chip on the liner, further comprising a lead-free electrode lead plate; said upper and lower surfaces of the plate are of a single metal surface; Free said lead electrode lead plate to the printed circuit board or a multi-layer laminated bus bar, a power semiconductor chip disposed thereon; said power the semiconductor chip includes an IGBT chip and a cathode FRD chips, and the collector electrode of the chip back surface of the back of the FRD chip are interconnected by a single IGBT metallized side of the front plate; the collector terminal welded to a front surface of a single metal plate , the collector of the cathode interconnect and the back surface of the back FRD chip and led outside the IGBT chip module.

[0007] 作为优选方案之一,本发明的免引线键合IGBT模块,所述免引线电极引出板集成了栅极端子和发射极端子,将IGBT芯片正面的栅极互连并引出至模块外部,同时将IGBT芯片正面的发射极和FRD芯片正面的阳极互连并引出至模块外部;此外,还包括集电极端子。 [0007] As one preferred embodiment, the present invention is free IGBT module wire bonding, the lead-free electrode lead plate integrated emitter terminal and a gate terminal, the gate of the IGBT chip interconnect the front module and is led out to the outside while the positive anode interconnect emitter of IGBT chips and FRD chip front surface and leads to the outside of the module; in addition, further comprising a collector terminal. 集电极端子通过锡银焊层焊接到衬板正面的单一金属化面上,将IGBT芯片背面的集电极与FRD芯片背面的阴极互连并弓I出至模块外部。 Welded to the collector terminal of a single metal surface of the front plate by tin-silver solder layer, the cathode interconnect and the back surface of the collector FRD chip back surface of the IGBT chip and to an external module I bow.

[0008] 作为优选方案之二,所述免引线电极引出板集成了栅极端子、发射极端子和集电极端子,将IGBT芯片正面的栅极互连并引出模块外部,将IGBT芯片正面的发射极和FRD芯片正面的阳极互连并引出模块外部,还将IGBT芯片背面的集电极和FRD芯片背面的阴极互连并引出至模块外部。 [0008] As a second preferred embodiment of the lead-free electrode lead plate integrated gate terminal, an emitter terminal and collector terminal, the gate of the IGBT chip interconnects the front and external lead-out module, the front surface of the IGBT chip emits positive electrode and the anode interconnect FRD chip module and an external lead-out, the rear surface of the collector and the cathode interconnect FRD chip also IGBT chip and led out to the back surface of the external module. [0009] 所述免引线电极引出板尺寸线路连接上需要调整为与IGBT适应,同时,免引线电极引出板与功率半导体芯片正面电极或衬板正面的单一金属化面的连接介质为银。 [0009] The lead-free electrode lead connecting circuit board size to be adjusted to adapt to the IGBT, while the lead-free lead-out electrode plate and the positive electrode of the power semiconductor chips or a single medium is connected to the front plate of metal surface is silver.

[0010] 本发明提供的免引线键合IGBT模块,内部采用免引线电极引出板对功率半导体芯片的电极直接进行互连并引出至模块外部,不再需要将功率半导体芯片正面的电极通过引线先引出到衬板上再进行互连,模块结构更简单,所需的封装材料和零部件更少;同时, 使得模块封装免除了引线键合工艺,封装工艺更简单,快捷,并可大大提高模块可靠性;此外,该发明的散热模式与现有焊接式IGBT模块的单面散热不同,为双面散热,从而减小模块的热阻,增加了模块的功率密度;最后,还可减小模块内部的寄生参数(电阻和电感)。 [0010] The present invention provides a lead-free bond IGBT module, the internal use of lead-free electrode lead-out electrode plate of the power semiconductor chip is directly interconnected and drawn out to the outside of the module, the front is no longer needed the power semiconductor chip first electrode by wire lead to further interconnect plate, a simpler structure module, and packaging materials required fewer parts; the same time, so that the module package eliminating the wire bonding process, a packaging process more simple, quick, and can greatly increase module reliability; in addition, the heat dissipation single-sided mode of the invention, the conventional heat welding different IGBT module, a double-sided cooling, thereby reducing the thermal resistance of the module, increasing the power density of the module; Finally, the module may be reduced internal parasitic parameters (resistance and inductance).

附图说明 BRIEF DESCRIPTION

[0011] 图1为现有焊接式IGBT模块结构示意图; [0011] FIG. 1 is a schematic view of the conventional welded structure of the IGBT module;

[0012] 图2为本发明实施例1的结构示意图; [0012] FIG 2 structural diagram of an embodiment of the invention;

[0013] 图3为本发明实施例2的结构示意图。 [0013] FIG. 3 schematic structural diagram of embodiment 2 of the present invention.

[0014]其中: [0014] wherein:

[0015] 1,:基板;2' :锡银焊层;3' :衬板,31,:衬板正面图形金属化面;32,:衬板背面单一金属化面;4,=FRD芯片;41,=FRD芯片阳极;42,=FRD芯片阴极;5,=IGBT芯片;51,=IGBT 芯片栅极;52,=IGBT芯片发射极;53,=IGBT芯片集电极;6,:引线;7,:集电极端子;8,:发射极端子;9' :栅极端子;2 :银;31 :衬板正面单一金属化面;6 :免引线电极引出板;61 :第二发射极;62 :第二栅极;63 :第二集电极。 [0015] ,: substrate 1; 2 ': tin-silver solder layer; 3': plate, a front plate 31 ,: surface metallization pattern; 32 ,: the back surface of a single metal plate; 4, = FRD chip; 41, = FRD chips anode; 42, = FRD chip cathode; 5, = IGBT chip; 51, = IGBT chip gate; 52, = IGBT chip is an emitter; 53, = IGBT chip collector; 6 ,: leads; 7 ,: collector terminal; 8 ,: emitter terminal; 9 ': a gate terminal; 2: silver; 31: a front surface of a single metal plate; 6: Free lead electrode lead plate; 61: second emitter; 62 : a second gate electrode; 63: second collector.

具体实施方式 Detailed ways

[0016] 实施例1 [0016] Example 1

[0017] 如图2所示,为本发明实施例1的免引线键合IGBT模块的结构示意图。 [0017] As shown in FIG 2, a schematic view of the structure of a wire bonding-free IGBT module according to Embodiment 1 of the present invention. 免引线键合IGBT模块包括基板1,、焊接在基板上的衬板3'、焊接在衬板上的功率半导体芯片(包括IGBT芯片5'和FRD芯片4' )和集电极端子7'以及设置在功率半导体芯片上的免引线电极引出板6。 Free wire bonding IGBT module 1 comprises a substrate ,, soldered on the substrate plate 3 ', the liner is welded to the power semiconductor chip (IGBT chips comprising 5' and FRD chip 4 ') and the collector terminal 7' and provided Free lead electrode of the power semiconductor chips on a lead plate 6. 免引线电极引出板6与功率半导体芯片正面电极的连接介质为银2。 Free lead electrode lead plate 6 and the connecting medium power semiconductor chip 2 of the front electrode silver. 衬板3' 的上下表面均为单一金属化面31及32' ;IGBT芯片5'背面的集电极53'及FRD芯片4'背面的阴极42'通过衬板正面的单一金属化面31实现互连;集电极端子V焊接在衬板3'正面的单一金属化面31上,将IGBT芯片5,背面的集电极53,及FRD芯片4,背面的阴极42, 互连并引出至模块外部;免引线电极引出板6集成了栅极端子9'和发射极端子8' JfIGBT 芯片5'正面的栅极51'通过第二栅极62互连并引出至模块外部,同时将IGBT芯片5'正面的发射极52'和FRD芯片4'正面的阳极41'通过第二发射极61互连并引出至模块外部。 Lining 3 'is a single upper and lower surfaces are metallized surface 31 and 32'; IGBT chip 5 'of the back surface collector electrode 53' and FRD chips 4 'of the back surface of the cathode 42' by lining interoperability of the front surface 31 of a single metal even; a collector plate welded to the terminal V 3 'single metallization front surface 31, the IGBT chip 5, the back surface of the collector 53 and FRD chip 4, the back surface of the cathode 42, and leads to the outside interconnection module; Free lead electrode lead plate 6 integrated gate terminal 9 'and the emitter terminal 8' JfIGBT chip 5 'front gate 51' through the second gate interconnection 62 and drawn outside the module, while the IGBT chip 5 'positive emitter 52 'and FRD chip 4' in front of the anode 41 'through the second emitter 61 led out to the outside and interconnect module. 从而不再需要将芯片正面电极通过引线进行互连,实现免引线键合。 Thereby eliminating the need to interconnect the front electrode chip by wire, wire bonding to achieve free. 免引线电极引出板结合了模块的栅极端子和发射极端子,减小了模块体积,减小了寄生电感;并且只需一次键合焊接便可完成所有芯片正面电极的连接,提高了工艺效率;同时,在免引线电极引出板和芯片正面电极之间形成的银键合层可以大大提高模块的可靠性;最后,模块工作时所产生的热量可以通过免引线电极引出板传导出去,免引线电极引出板既能通电流,也能散热,与现有焊接式模块正面通电流,背面散热相比,其散热能力更高,模块热阻更小,性能更好。 Free lead electrode lead plate combined with the gate terminal and the emitter terminal of the module, reducing the volume of the module, the parasitic inductance is reduced; and just one weld bonding the chip to complete the connection of all the front electrode, to improve process efficiency ; Meanwhile, a silver bonding layer between the extraction electrode plate and the lead-free front electrode formed on the chip can greatly improve the reliability of the module; Finally, when the heat generated by the module can be conducted away through the free lead electrode lead plate, lead-free current lead-through both the electrode plates, but also heat, the conventional welding current through the front of the module, compared to the back heat, higher heat dissipation capacity, heat resistance module is smaller, and better performance.

[0018] 实施例2[0019] 如图3所示,为本发明实施例2的IGBT模块结构示意图。 [0018] Example 2 [0019] FIG. 3, a schematic diagram of the structure of the IGBT module 2 of the embodiment of the invention embodiment. 整个IGBT模块包括包括基板1'、焊接在基板上的衬板3'、焊接在衬板上的功率半导体芯片(包括IGBT芯片5' 和FRD芯片4' )和免引线电极引出板6。 Whole IGBT module 1 comprises a substrate comprising 'solder on the substrate plate 3', the welding power semiconductor chips on a plate (including the IGBT chip 5 'and the FRD chips 4') lead-free and lead-out electrode plate 6. 与图2相比,变化在于免引线电极引出板不仅集成了栅极端子9'和发射极端子8',还集成了集电极端子7'。 Compared with FIG. 2, a change that lead-free electrode lead plate, which integrates the gate terminal 9 'and the emitter terminal 8', also integrates the collector terminal 7 '. 免引线电极引出板6与功率半导体芯片正面电极及衬板3'正面单一金属化面31的连接介质为银2。 Free lead electrode lead-out electrode plate and the front plate 6 and the power semiconductor chip 3 'single front surface metallization connecting medium 31 is silver 2. 功率半导体芯片的所有电极均通过免引线电极引出板6进行互连并引出至模块外部,具体地,IGBT芯片5' 正面的栅极51'通过免引线电极引出板6的第二栅极62互连并引出至模块外部;IGBT芯片5'正面的发射极52'和FRD芯片4'正面的阳极41'通过免引线电极引出板6的第二发射极61互连并引出至模块外部;IGBT芯片5'背面的集电极53'和FRD芯片4'背面的阴极42'通过免引线电极引出板6的第二集电极63互连并引出至模块外部。 All average power semiconductor chip electrode by a lead-free electrode lead plate 6 are interconnected and drawn outside the module, in particular, the IGBT chip 5 'front gate 51' of the second gate lead 62 through the free cross-plate 6 lead electrode and leads connected to the external module; the IGBT chip 5 'front emitter 52' ​​and FRD chips 4 'positive anode 41' drawn by the second radiation plate 6 Free electrode lead electrode 61 drawn out to the outside and interconnect module; the IGBT chip 5 'of the back surface of the collector 53' and the FRD chips 63 are interconnected by a second collector electrode lead-out lead plate 6 Free 4 'of the back surface of the cathode 42' and is led out to the outside of the module.

Claims (4)

1. 一种免引线键合IGBT模块,包括基板、焊接在基板上的衬板、焊接在衬板上的功率半导体芯片和集电极端子,其特征在于,还包括免引线电极引出板;所述衬板的上下表面均为单一金属化面;所述免引线电极引出板为复合母排或多层印制电路板,设置在功率半导体芯片上面;所述功率半导体芯片包括IGBT芯片和FRD芯片,IGBT芯片背面的集电极及FRD芯片背面的阴极通过衬板正面的单一金属化面实现互连;所述集电极端子焊接在衬板正面的单一金属化面上,将IGBT芯片背面的集电极及FRD芯片背面的阴极互连并引出至模块外部。 A wire bonding Free IGBT module comprising a substrate, the substrate plate used in the welding, the welding power and the collector terminal of the semiconductor chip on the liner, characterized by further comprising a lead-free electrode lead plate; the upper and lower surfaces of the liner are of a single metal surface; Free said lead electrode lead plate or busbar composite multilayer printed circuit board, a power semiconductor chip disposed thereon; said power semiconductor chip includes an IGBT chip and FRD chips, the collector and the cathode back surface of the back of the IGBT chip FRD chips interconnected by the front surface of a single metal plate; single front side of the metallized liner, the back surface of the collector of the IGBT chip and a collector terminal welding FRD chip back surface of the cathode interconnect and is led out to the outside of the module.
2.根据权利要求1所述的免引线键合IGBT模块,其特征在于,所述免引线电极引出板集成了栅极端子和发射极端子,将IGBT芯片正面的栅极互连并引出至模块外部,同时将IGBT芯片正面的发射极和FRD芯片正面的阳极互连并引出至模块外部。 The bonding wire Free IGBT module according to claim 1, wherein said lead-free electrode lead plate integrated emitter terminal and a gate terminal, the gate of the IGBT chip interconnect the front module and leads to the outside while the emitter and the anode interconnect the front FRD chip front side IGBT chip and led outside the module.
3.根据权利要求1所述的免引线键合IGBT模块,其特征在于,所述免引线电极引出板还集成了集电极端子,将IGBT芯片背面的集电极和FRD芯片背面的阴极互连并引出至模块外部。 The bonding wire Free IGBT module according to claim 1, wherein said lead-free electrode lead plate further integrates the collector terminal, the collector of the cathode interconnect and the back surface of the FRD chip and the back surface of the IGBT chip drawn to the outside of the module.
4.根据权利要求1至3之一所述的免引线键合IGBT模块,其特征在于,所述免引线电极引出板与功率半导体芯片正面电极或衬板正面的单一金属化面的连接介质为银。 1 according to one of the bonding wire 3 Free IGBT module as claimed in claim, wherein said connector-free medium of a single metal surface of the electrode lead-out lead plate or the front electrode of the power semiconductor chip front plate silver.
CN2011102224840A 2011-08-04 2011-08-04 Lead bonding-free IGBT (Insulated Gate Bipolar Translator) module CN102254886A (en)

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