CN217389106U - Ceramic substrate with high thermal conductivity - Google Patents
Ceramic substrate with high thermal conductivity Download PDFInfo
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- CN217389106U CN217389106U CN202220913966.4U CN202220913966U CN217389106U CN 217389106 U CN217389106 U CN 217389106U CN 202220913966 U CN202220913966 U CN 202220913966U CN 217389106 U CN217389106 U CN 217389106U
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Abstract
The utility model discloses a ceramic substrate with high thermal conductivity, which comprises a ceramic body, an upper circuit layer, a lower circuit layer, an upper graphene heat-conducting layer and a lower graphene heat-conducting layer; the upper surface and the lower surface of the ceramic body are penetrated to form conductive holes, metal is filled in the conductive holes to form conductive columns, the upper surface of the ceramic body is concavely provided with concave positions, the bottom surface of each concave position is provided with a plurality of heat conduction holes, the plurality of heat conduction holes are all penetrated to the lower surface of the ceramic body downwards, and each heat conduction hole is filled with a graphene material to form a heat conduction column; have the graphite alkene material and be formed with the heat conduction post through all packing in a plurality of heat conduction holes to the cooperation sets up graphite alkene heat-conducting layer and graphite alkene heat-conducting layer down, utilizes the characteristic of the high heat conduction of graphite alkene, makes the heat that sets up the electron device production on last graphite alkene heat-conducting layer can transmit fast to graphite alkene heat-conducting layer down on, dispels the heat by outside radiator again, and the radiating effect is better, satisfies the heat dissipation requirement of high power device completely.
Description
Technical Field
The utility model relates to a ceramic substrate field technique especially indicates a ceramic substrate of high thermal conductivity.
Background
The ceramic substrate means that a copper foil is directly bonded to alumina (Al) at a high temperature 2 O 3 ) Or a special process plate on the surface (single or double side) of an aluminum nitride (AlN) ceramic substrate. The manufactured ultrathin composite substrate has excellent electrical insulation performance, high heat conduction characteristic, excellent soft solderability and high adhesion strength, can be etched into various patterns like a PCB (printed circuit board), and has great current carrying capacity. Therefore, the ceramic substrate has become a basic material for high-power electronic circuit structure technology and interconnection technology.
At present, the microelectronic industry technology is rapidly developed, electronic devices and electronic equipment are developed towards high integration and miniaturization, and the performance requirements on substrates are higher and higher. The alumina ceramic substrate has the remarkable characteristics of excellent insulating property, better thermal conductivity, lower thermal expansion coefficient, stronger mechanical strength and the like, and is widely applied to the field of electronic industrial packaging such as thick film integrated circuits, LED packaging and the like.
The existing ceramic substrate is generally a single layer, only depends on ceramic materials for heat conduction, has low heat conduction efficiency, and cannot meet the heat dissipation requirement of a high-power device. Therefore, there is a need for improvements in current ceramic substrates.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present invention is directed to a ceramic substrate with high thermal conductivity, which can effectively solve the problem of low thermal conductivity of the existing ceramic substrate.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a ceramic substrate with high thermal conductivity comprises a ceramic body, an upper circuit layer, a lower circuit layer, an upper graphene heat conduction layer and a lower graphene heat conduction layer; the upper surface and the lower surface of the ceramic body are penetrated to form conductive holes, metal is filled in the conductive holes to form conductive columns, the upper surface of the ceramic body is concavely provided with concave positions, the bottom surface of each concave position is provided with a plurality of heat conduction holes, the plurality of heat conduction holes are all penetrated to the lower surface of the ceramic body downwards, and each heat conduction hole is filled with a graphene material to form a heat conduction column; the upper circuit layer and the lower circuit layer are respectively arranged on the upper surface and the lower surface of the ceramic body, the upper circuit layer is connected with the upper end of the conductive column, and the lower circuit layer is connected with the lower end of the conductive column; the upper graphene heat conduction layer is embedded in the concave position and is integrally connected with the upper end of each heat conduction column; this lower graphite alkene heat-conducting layer sets up in ceramic body's lower surface, and lower graphite alkene heat-conducting layer is connected with the lower extreme integrated into one piece of each heat conduction post.
As a preferable scheme, a metal surrounding plate is formed on the periphery of the upper surface of the ceramic body, the metal surrounding plate forms an accommodating cavity, and the upper circuit layer and the upper graphene heat conduction layer are both located in the accommodating cavity.
As a preferred scheme, the upper circuit layer comprises an upper nickel-vanadium alloy coating layer, an upper nickel-copper alloy coating layer and an upper pure silver coating layer, the upper nickel-vanadium alloy coating layer is formed on the upper surface of the ceramic body in a sputtering mode, the upper nickel-copper alloy coating layer is formed on the upper surface of the upper nickel-vanadium alloy coating layer in a sputtering mode, and the upper pure silver coating layer is formed on the upper surface of the upper nickel-copper alloy coating layer in a sputtering mode.
As a preferable scheme, the upper circuit layer further comprises an upper pure copper plate, the lower surface of the upper pure copper plate is subjected to hot dip coating to form an upper tin coating, and the upper tin coating and the upper pure silver coating are laminated together in a hot pressing mode.
As a preferred scheme, the circuit layer is including lower nickel vanadium alloy coating film layer, lower nickel copper alloy coating film layer and lower pure silver coating film layer down, and this time nickel vanadium alloy coating film layer sputter forming is at ceramic body's lower surface, and this time nickel copper alloy coating film layer sputter forming is at the lower surface of lower nickel vanadium alloy coating film layer, and this time pure silver coating film layer sputter forming is at the lower surface of lower nickel copper alloy coating film layer.
As a preferred scheme, the lower circuit layer further comprises a lower pure copper plate, a lower tin coating is formed on the upper surface of the lower pure copper plate through hot dip plating, and the lower tin coating and the lower pure silver coating are laminated together through hot pressing.
Compared with the prior art, the utility model obvious advantage and beneficial effect have, particularly, can know by above-mentioned technical scheme:
have the graphite alkene material and be formed with the heat conduction post through all packing in a plurality of heat conduction holes to the cooperation sets up graphite alkene heat-conducting layer and graphite alkene heat-conducting layer down, utilizes the characteristic of the high heat conduction of graphite alkene, makes the heat that sets up the electron device production on last graphite alkene heat-conducting layer can transmit fast to graphite alkene heat-conducting layer down on, dispels the heat by outside radiator again, and the radiating effect is better, satisfies the heat dissipation requirement of high power device completely.
To illustrate the structural features and functions of the present invention more clearly, the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
Drawings
Fig. 1 is a cross-sectional view of a preferred embodiment of the present invention.
The attached drawings indicate the following:
10. ceramic body 11, conductive hole
12. Concave position 13 and heat conducting hole
20. An upper circuit layer 21 and an upper nickel-vanadium alloy coating layer
22. The upper nickel-copper alloy coating layer 23 and the upper pure silver coating layer
24. Upper pure copper plate 25, upper tin plating layer
30. Lower circuit layer 31 and lower nickel-vanadium alloy coating layer
32. Lower nickel-copper alloy coating layer 33 and lower pure silver coating layer
34. Lower pure copper plate 35, lower tin plating layer
40. Go up graphite alkene heat-conducting layer 50, graphite alkene heat-conducting layer down
61. Conductive post 62, heat conduction post
70. A metal enclosing plate 71 and an accommodating cavity.
Detailed Description
Referring to fig. 1, a specific structure of a preferred embodiment of the present invention is shown, which includes a ceramic body 10, an upper circuit layer 20, a lower circuit layer 30, an upper graphene heat-conducting layer 40, and a lower graphene heat-conducting layer 50.
The upper and lower surface of this ceramic body 10 runs through and is formed with electrically conductive hole 11, the metal of packing is formed with electrically conductive post 61 in this electrically conductive hole 11, this electrically conductive post 61 is pure copper material, the concave position 12 that is equipped with of the upper surface of this ceramic body 10, a plurality of heat conduction holes 13 have been seted up to the bottom surface of this concave position 12, these a plurality of heat conduction holes 13 all run through to the lower surface of ceramic body 10 downwards, and all pack in each heat conduction hole 13 and have the graphite alkene material and be formed with heat conduction post 62, this ceramic body 10 is alumina ceramics material.
The upper circuit layer 20 and the lower circuit layer 30 are respectively disposed on the upper and lower surfaces of the ceramic body 10, the upper circuit layer 20 is connected to the upper end of the conductive pillar 61, and the lower circuit layer 30 is connected to the lower end of the conductive pillar 61; specifically, the method comprises the following steps:
the upper circuit layer 20 comprises an upper nickel-vanadium alloy coating layer 21, an upper nickel-copper alloy coating layer 22 and an upper pure silver coating layer 23, the upper nickel-vanadium alloy coating layer 21 is formed on the upper surface of the ceramic body 10 in a sputtering mode, the upper nickel-copper alloy coating layer 22 is formed on the upper surface of the upper nickel-vanadium alloy coating layer 21 in a sputtering mode, and the upper pure silver coating layer 23 is formed on the upper surface of the upper nickel-copper alloy coating layer 22 in a sputtering mode. The upper circuit layer 20 further includes an upper pure copper plate 24, the lower surface of the upper pure copper plate 24 is hot-dip plated to form an upper tin plating layer 25, and the upper tin plating layer 25 and the upper pure silver plating layer 23 are hot-pressed and laminated together.
The lower circuit layer 30 comprises a lower nickel-vanadium alloy coating layer 31, a lower nickel-copper alloy coating layer 32 and a lower pure silver coating layer 33, the lower nickel-vanadium alloy coating layer 31 is formed on the lower surface of the ceramic body 10 in a sputtering mode, the lower nickel-copper alloy coating layer 32 is formed on the lower surface of the lower nickel-vanadium alloy coating layer 31 in a sputtering mode, and the lower pure silver coating layer 33 is formed on the lower surface of the lower nickel-copper alloy coating layer 32 in a sputtering mode. The lower circuit layer 30 further includes a lower pure copper plate 34, a lower tin plating layer 35 is formed on the upper surface of the lower pure copper plate 34 by hot dip plating, and the lower tin plating layer 35 and the lower pure silver plating layer 33 are laminated together by hot pressing.
The upper graphene heat conduction layer 40 is embedded in the concave position 12, and the upper graphene heat conduction layer 40 is integrally connected with the upper end of each heat conduction column 62; in the present embodiment, the upper graphene thermal conductive layer 40 protrudes upward from the upper surface of the ceramic body 10.
This lower graphite alkene heat-conducting layer 50 sets up in the lower surface of ceramic body 10, and lower graphite alkene heat-conducting layer 50 is connected with the lower extreme integrated into one piece of each heat conduction post 62.
And a metal surrounding plate 70 is formed on the periphery of the upper surface of the ceramic body 10, the metal surrounding plate 70 forms an accommodating cavity 71, and the upper circuit layer 20 and the upper graphene thermal conductive layer 40 are located in the accommodating cavity 71.
During the use, with the electronic device laminating fixed and with last circuit layer 20 turn-on connection on last graphite alkene heat-conducting layer 40, then, graphite alkene heat-conducting layer 40 and the laminating of outside radiator down to it can to make down circuit layer 30 and external lines turn-on connection. In the working process, the heat generated by the electronic device is rapidly transferred to the radiator through the upper graphene heat conduction layer 40, the heat conduction column 62 and the lower graphene heat conduction layer 50 in sequence, and efficient heat dissipation is realized.
The utility model discloses a design focus lies in: have the graphite alkene material and be formed with the heat conduction post through all packing in a plurality of heat conduction holes to the cooperation sets up graphite alkene heat-conducting layer and graphite alkene heat-conducting layer down, utilizes the characteristic of the high heat conduction of graphite alkene, makes the heat that sets up the electron device production on last graphite alkene heat-conducting layer can transmit fast to graphite alkene heat-conducting layer down on, dispels the heat by outside radiator again, and the radiating effect is better, satisfies the heat dissipation requirement of high power device completely.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the technical scope of the present invention, so that any slight modifications, equivalent changes and modifications made by the technical spirit of the present invention to the above embodiments are all within the scope of the technical solution of the present invention.
Claims (6)
1. A high thermal conductivity ceramic substrate, characterized by: the heat-conducting structure comprises a ceramic body, an upper circuit layer, a lower circuit layer, an upper graphene heat-conducting layer and a lower graphene heat-conducting layer; the upper surface and the lower surface of the ceramic body are penetrated to form conductive holes, metal is filled in the conductive holes to form conductive columns, the upper surface of the ceramic body is concavely provided with concave positions, the bottom surface of each concave position is provided with a plurality of heat conduction holes, the plurality of heat conduction holes are all penetrated to the lower surface of the ceramic body downwards, and each heat conduction hole is filled with a graphene material to form a heat conduction column; the upper circuit layer and the lower circuit layer are respectively arranged on the upper surface and the lower surface of the ceramic body, the upper circuit layer is connected with the upper end of the conductive column, and the lower circuit layer is connected with the lower end of the conductive column; the upper graphene heat conduction layer is embedded in the concave position and is integrally connected with the upper end of each heat conduction column; this lower graphite alkene heat-conducting layer sets up in ceramic body's lower surface, and lower graphite alkene heat-conducting layer is connected with the lower extreme integrated into one piece of each heat conduction post.
2. The high thermal conductivity ceramic substrate according to claim 1, wherein: the periphery of the upper surface of the ceramic body is formed with a metal surrounding plate, the metal surrounding plate forms an accommodating cavity, and the upper circuit layer and the upper graphene heat conduction layer are both located in the accommodating cavity.
3. The high thermal conductivity ceramic substrate according to claim 1, wherein: the upper circuit layer comprises an upper nickel-vanadium alloy coating layer, an upper nickel-copper alloy coating layer and an upper pure silver coating layer, the upper nickel-vanadium alloy coating layer is formed on the upper surface of the ceramic body in a sputtering mode, the upper nickel-copper alloy coating layer is formed on the upper surface of the upper nickel-vanadium alloy coating layer in a sputtering mode, and the upper pure silver coating layer is formed on the upper surface of the upper nickel-copper alloy coating layer in a sputtering mode.
4. The high thermal conductivity ceramic substrate according to claim 3, wherein: the upper circuit layer also comprises an upper pure copper plate, the lower surface of the upper pure copper plate is hot-dipped to form an upper tin coating, and the upper tin coating and the upper pure silver coating are hot-pressed and laminated together.
5. The high thermal conductivity ceramic substrate according to claim 1, wherein: the lower circuit layer comprises a lower nickel-vanadium alloy coating layer, a lower nickel-copper alloy coating layer and a lower pure silver coating layer, the lower nickel-vanadium alloy coating layer is formed on the lower surface of the ceramic body in a sputtering mode, the lower nickel-copper alloy coating layer is formed on the lower surface of the lower nickel-vanadium alloy coating layer in a sputtering mode, and the lower pure silver coating layer is formed on the lower surface of the lower nickel-copper alloy coating layer in a sputtering mode.
6. The high thermal conductivity ceramic substrate according to claim 5, wherein: the lower circuit layer also comprises a lower pure copper plate, the upper surface of the lower pure copper plate is hot-dipped to form a lower tin coating, and the lower tin coating and the lower pure silver coating are hot-pressed and laminated together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220913966.4U CN217389106U (en) | 2022-04-20 | 2022-04-20 | Ceramic substrate with high thermal conductivity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220913966.4U CN217389106U (en) | 2022-04-20 | 2022-04-20 | Ceramic substrate with high thermal conductivity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217389106U true CN217389106U (en) | 2022-09-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220913966.4U Active CN217389106U (en) | 2022-04-20 | 2022-04-20 | Ceramic substrate with high thermal conductivity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217389106U (en) |
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- 2022-04-20 CN CN202220913966.4U patent/CN217389106U/en active Active
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