CN218277264U - Embedded heat dissipation type ceramic substrate - Google Patents
Embedded heat dissipation type ceramic substrate Download PDFInfo
- Publication number
- CN218277264U CN218277264U CN202221145542.4U CN202221145542U CN218277264U CN 218277264 U CN218277264 U CN 218277264U CN 202221145542 U CN202221145542 U CN 202221145542U CN 218277264 U CN218277264 U CN 218277264U
- Authority
- CN
- China
- Prior art keywords
- heat conduction
- heat
- layer
- graphene
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model discloses an embedded heat dissipation type ceramic substrate, which comprises a ceramic body, an upper circuit layer, a lower circuit layer, an inner graphene heat-conducting layer, an upper graphene heat-conducting layer, a first lower graphene heat-conducting layer and a second lower graphene heat-conducting layer; this ceramic body is including the basal portion and the convex part that extends of an organic whole on the basal portion, the recessed encapsulation chamber that supplies electronic device to inlay to bury of opening up that is formed with of convex part, the electrically conductive hole has been seted up to the bottom surface in encapsulation chamber, first heat conduction hole and second heat conduction hole, set up first heat conduction post through the cooperation, the second heat conduction post, go up graphite alkene heat-conducting layer, graphite alkene heat-conducting layer under first graphite alkene heat-conducting layer and the second, the heat that the electronic device that makes the embedding produce in the encapsulation can be derived fast, heat conduction efficiency has effectively been improved, the ideal that the radiating effect is more, satisfy high-power device's encapsulation requirement completely.
Description
Technical Field
The utility model belongs to the technical field of the ceramic substrate technique and specifically relates to indicate a bury formula heat dissipation type ceramic substrate.
Background
The ceramic substrate means that a copper foil is directly bonded to alumina (Al) at a high temperature 2 O 3 ) Or a special process plate on the surface (single or double side) of an aluminum nitride (AlN) ceramic substrate. The manufactured ultrathin composite substrate has excellent electrical insulation performance, high heat conduction characteristic, excellent soft solderability and high adhesion strength, can be etched into various patterns like a PCB (printed circuit board), and has great current carrying capacity. Therefore, the ceramic substrate has become a basic material for high-power electronic circuit structure technology and interconnection technology.
At present, the technology of the microelectronic industry is rapidly developed, electronic devices and electronic equipment are developed towards high integration and miniaturization, and the performance requirements on substrates are higher and higher. The alumina ceramic substrate has the remarkable characteristics of excellent insulating property, better thermal conductivity, lower thermal expansion coefficient, stronger mechanical strength and the like, and is widely applied to the field of electronic industrial packaging such as thick film integrated circuits, LED packaging and the like.
In order to simplify the structure of the ceramic substrate and better fix the electronic device, an embedded ceramic substrate is provided at present, which is to directly form a packaging cavity on the ceramic substrate and embed and fix the electronic device by using the packaging cavity. Therefore, there is a need for an improved embedded ceramic substrate.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present invention provides an embedded heat dissipation ceramic substrate, which can effectively solve the problems of low heat conduction efficiency and unsatisfactory heat dissipation effect of the embedded heat dissipation ceramic substrate.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
an embedded heat dissipation type ceramic substrate comprises a ceramic body, an upper circuit layer, a lower circuit layer, an inner graphene heat conduction layer, an upper graphene heat conduction layer, a first lower graphene heat conduction layer and a second lower graphene heat conduction layer;
the ceramic body comprises a base part and a convex part integrally extending from the base part, wherein a packaging cavity with an upward opening for embedding the electronic device is formed at the lower concave part of the convex part, a conductive hole, a first heat conduction hole and a second heat conduction hole are formed in the bottom surface of the packaging cavity, the conductive hole, the first heat conduction hole and the second heat conduction hole penetrate through the lower surface of the base part, metal is filled in the conductive hole to form a conductive column, and graphene materials are filled in the first heat conduction hole and the second heat conduction hole to form a first heat conduction column and a second heat conduction column respectively;
the upper circuit layer and the lower circuit layer are respectively arranged on the upper surface and the lower surface of the base part, the upper circuit layer is connected with the upper end of the conductive column and is positioned in the packaging cavity, and the lower circuit layer is connected with the lower end of the conductive column;
the inner graphene heat conduction layer is molded and covered on the inner side wall of the packaging cavity and is integrally molded and connected with the upper end of the first heat conduction column;
the upper graphene heat conduction layer is arranged on the upper surface of the base and positioned in the packaging cavity, and the upper graphene heat conduction layer is integrally connected with the upper end of the second heat conduction column;
this graphite alkene heat-conducting layer and second graphite alkene heat-conducting layer all set up in the lower surface of basal portion down, and first graphite alkene heat-conducting layer is connected with the lower extreme integrated into one piece of first heat conduction post down, and graphite alkene heat-conducting layer is connected with the lower extreme integrated into one piece of second heat conduction post under the second.
Preferably, the upper surface of the convex part is concave downwards to form an annular water retaining groove, and the cross section of the annular water retaining groove is triangular.
As a preferred scheme, a carbon fiber insulating layer is embedded and molded in the base, a plurality of through holes are formed in the carbon fiber insulating layer, and the plurality of through holes are all embedded in the base.
As a preferred scheme, the periphery side shaping cladding of ceramic body has the carbon fiber shell, and this carbon fiber shell is connected with carbon fiber insulating layer integrated into one piece.
As a preferable scheme, the first heat conduction hole and the second heat conduction hole are both multiple, and each of the first heat conduction hole and each of the second heat conduction holes is filled with a graphene material to form multiple first heat conduction columns and multiple second heat conduction columns respectively.
Compared with the prior art, the utility model obvious advantage and beneficial effect have, particularly, can know by above-mentioned technical scheme:
set up first heat conduction post, second heat conduction post, go up graphite alkene heat-conducting layer, first graphite alkene heat-conducting layer and the graphite alkene heat-conducting layer under the second through the cooperation for the heat that the electronic device of embedding in the encapsulation produced can be derived fast, has effectively improved heat conduction efficiency, and the more ideal of radiating effect satisfies high-power device's encapsulation requirement completely.
To illustrate the structural features and functions of the present invention more clearly, the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
Drawings
Fig. 1 is a cross-sectional view of a preferred embodiment of the present invention.
The attached drawings indicate the following:
10. ceramic body 11, base
12. Convex part 101 and packaging cavity
102. The conductive hole 103 and the first heat conduction hole
104. Second heat conduction hole 105 and annular water retaining groove
20. Upper circuit layer 30, lower circuit layer
40. Interior graphite alkene heat-conducting layer 50, go up graphite alkene heat-conducting layer
60. First lower graphene heat conducting layer 70, second lower graphene heat conducting layer
81. Conductive column 82 and first conductive column
83. Second heat conduction column 91 and carbon fiber insulation layer
92. Carbon fiber shell 901, through-hole.
Detailed Description
Referring to fig. 1, a specific structure of a preferred embodiment of the present invention is shown, which includes a ceramic body 10, an upper circuit layer 20, a lower circuit layer 30, an inner graphene heat conduction layer 40, an upper graphene heat conduction layer 50, a first lower graphene heat conduction layer 60, and a second lower graphene heat conduction layer 70.
The ceramic body 10 includes a base 11 and a protrusion 12 integrally extending from the base 11, a concave portion of the protrusion 12 is formed with a package cavity 101 having an upward opening for embedding an electronic device, a conductive hole 102, a first thermal conductive hole 103 and a second thermal conductive hole 104 are formed in a bottom surface of the package cavity 101, the conductive hole 102, the first thermal conductive hole 103 and the second thermal conductive hole 104 all penetrate through to a lower surface of the base 11, a conductive column 81 is formed in the conductive hole 102 by filling metal, and a first thermal conductive column 82 and a second thermal conductive column 83 are respectively formed by filling graphene materials in the first thermal conductive hole 103 and the second thermal conductive hole 104. In this embodiment, the upper surface of the convex portion 12 is recessed to form an annular water retaining groove 105, and the cross section of the annular water retaining groove 105 is triangular. The carbon fiber insulating layer 91 is embedded in the base 11, a plurality of through holes 901 are formed in the carbon fiber insulating layer 91, and the through holes 901 are all embedded in the base 11. In addition, the outer peripheral side surface of the ceramic body 10 is coated with a carbon fiber housing 92, and the carbon fiber housing 92 is integrally formed and connected with the carbon fiber insulating layer 91, so as to effectively enhance the overall structural strength of the ceramic body 10. And, these first heat conduction hole 103 and second heat conduction hole 104 are a plurality of, and every first heat conduction hole 103 and every second heat conduction hole 104 all pack and have the graphite alkene material and be formed with a plurality of first heat conduction posts 82 and a plurality of second heat conduction posts 83 respectively to improve heat conduction efficiency, reinforcing radiating effect.
The upper circuit layer 20 and the lower circuit layer 30 are respectively disposed on the upper and lower surfaces of the base 11, the upper circuit layer 20 is connected to the upper end of the conductive pillar 81 and is located in the package cavity 101, and the lower circuit layer 30 is connected to the lower end of the conductive pillar 81.
The inner graphene heat conduction layer 40 covers the inner side wall of the package cavity 101 and is integrally connected with the upper ends of the first heat conduction columns 82.
The upper graphene heat conduction layer 50 is disposed on the upper surface of the base 11 and located in the packaging cavity 101, and the upper graphene heat conduction layer 50 is integrally connected to the upper ends of the second heat conduction pillars 83.
The first lower graphene heat conduction layer 60 and the second lower graphene heat conduction layer 70 are both arranged on the lower surface of the base 11, the first lower graphene heat conduction layer 60 is integrally formed with the lower end of the first heat conduction column 82, and the second lower graphene heat conduction layer 70 is integrally formed with the lower end of the second heat conduction column 83.
During the use, bury the electron device in encapsulation chamber 101 for the bottom surface and the side of week of electron device respectively with last graphite alkene heat-conducting layer 50 and interior graphite alkene heat-conducting layer 40 laminating contact, make electron device and last circuit layer 20 turn-on connection simultaneously, then, arrange the apron in on the convex part 12 and seal up the opening of encapsulation chamber 101, then, with graphite alkene heat-conducting layer 70 and the laminating of outside radiator under first graphite alkene heat-conducting layer 60 and the second, and make circuit layer 30 and external lines turn-on connection down can. In the working process, heat generated by the electronic device is transferred to the upper graphene heat conduction layer 50 and the inner graphene heat conduction layer 40, then is transferred to the first lower graphene heat conduction layer 60 and the second lower graphene heat conduction layer 70 through the first heat conduction columns 82 and the second heat conduction columns 88 respectively, and finally is transferred to the radiator, so that efficient heat dissipation is realized.
The utility model discloses a design focus lies in: set up first heat conduction post, second heat conduction post, go up graphite alkene heat-conducting layer, first graphite alkene heat-conducting layer and the graphite alkene heat-conducting layer under the second through the cooperation for the heat that the electronic device of embedding in the encapsulation produced can be derived fast, has effectively improved heat conduction efficiency, and the more ideal of radiating effect satisfies high-power device's encapsulation requirement completely.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the technical scope of the present invention, so that any slight modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention are all within the scope of the technical solution of the present invention.
Claims (5)
1. The utility model provides an embedded heat dissipation type ceramic substrate which characterized in that: the heat-conducting ceramic comprises a ceramic body, an upper circuit layer, a lower circuit layer, an inner graphene heat-conducting layer, an upper graphene heat-conducting layer, a first lower graphene heat-conducting layer and a second lower graphene heat-conducting layer;
the ceramic body comprises a base part and a convex part integrally extending from the base part, wherein a packaging cavity with an upward opening for embedding the electronic device is formed at the lower concave part of the convex part, a conductive hole, a first heat conduction hole and a second heat conduction hole are formed in the bottom surface of the packaging cavity, the conductive hole, the first heat conduction hole and the second heat conduction hole penetrate through the lower surface of the base part, metal is filled in the conductive hole to form a conductive column, and graphene materials are filled in the first heat conduction hole and the second heat conduction hole to form a first heat conduction column and a second heat conduction column respectively;
the upper circuit layer and the lower circuit layer are respectively arranged on the upper surface and the lower surface of the base part, the upper circuit layer is connected with the upper end of the conductive column and is positioned in the packaging cavity, and the lower circuit layer is connected with the lower end of the conductive column;
the inner graphene heat conduction layer is formed and covered on the inner side wall of the packaging cavity and is integrally connected with the upper end of the first heat conduction column;
the upper graphene heat conduction layer is arranged on the upper surface of the base and is positioned in the packaging cavity, and the upper graphene heat conduction layer is integrally connected with the upper end of the second heat conduction column;
the first lower graphene heat conduction layer and the second lower graphene heat conduction layer are both arranged on the lower surface of the base, the first lower graphene heat conduction layer is connected with the lower end of the first heat conduction column in an integrated forming mode, and the second lower graphene heat conduction layer is connected with the lower end of the second heat conduction column in an integrated forming mode.
2. The embedded heat dissipation type ceramic substrate of claim 1, wherein: the upper surface of the convex part is concave downwards to form an annular water retaining groove, and the cross section of the annular water retaining groove is triangular.
3. The embedded heat dissipation type ceramic substrate of claim 1, wherein: the embedded molding has the carbon fiber insulating layer in the basal portion, has seted up a plurality of through-holes on this carbon fiber insulating layer, and these a plurality of through-holes all bury in the basal portion.
4. The embedded heat dissipation type ceramic substrate of claim 3, wherein: the periphery side shaping cladding of ceramic body has the carbon fiber shell, and this carbon fiber shell is connected with carbon fiber insulating layer integrated into one piece.
5. The embedded heat dissipation type ceramic substrate of claim 1, wherein: the first heat conduction holes and the second heat conduction holes are multiple, and each first heat conduction hole and each second heat conduction hole are filled with graphene materials to form a plurality of first heat conduction columns and a plurality of second heat conduction columns respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221145542.4U CN218277264U (en) | 2022-05-13 | 2022-05-13 | Embedded heat dissipation type ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221145542.4U CN218277264U (en) | 2022-05-13 | 2022-05-13 | Embedded heat dissipation type ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218277264U true CN218277264U (en) | 2023-01-10 |
Family
ID=84755836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221145542.4U Active CN218277264U (en) | 2022-05-13 | 2022-05-13 | Embedded heat dissipation type ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218277264U (en) |
-
2022
- 2022-05-13 CN CN202221145542.4U patent/CN218277264U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102107901B1 (en) | Ceramic module for power semiconductor integrated packaging and preparation method thereof | |
| CN101958307B (en) | Power semiconductor module and method of manufacturing the same | |
| JP2010129868A (en) | Semiconductor module for power and method of manufacturing the same | |
| CN106208623A (en) | Power module | |
| CN110246835B (en) | Three-dimensional integrated high-voltage silicon carbide module packaging structure | |
| CN101266952A (en) | Novel full-press high-power IGBT multi-mode rack porcelain tube shell | |
| US20060220188A1 (en) | Package structure having mixed circuit and composite substrate | |
| CN218277264U (en) | Embedded heat dissipation type ceramic substrate | |
| CN212381467U (en) | Metal-based circuit board | |
| CN216145606U (en) | Semiconductor circuit having a plurality of transistors | |
| CN217387149U (en) | Durable aluminum oxide ceramic substrate for packaging | |
| US20040227230A1 (en) | Heat spreaders | |
| CN217389091U (en) | Multi-layer heat dissipation type ceramic substrate | |
| CN217389106U (en) | Ceramic substrate with high thermal conductivity | |
| CN217770481U (en) | Temperature change resistant and crack resistant ceramic substrate | |
| CN211980602U (en) | High-heat-dissipation semiconductor product with bottom heat dissipation plate and electronic product | |
| CN212587484U (en) | Dual-heat-dissipation semiconductor product and electronic product | |
| CN218498093U (en) | Universal UV packaged ceramic substrate | |
| CN212587483U (en) | High-heat-dissipation semiconductor product and electronic product | |
| CN216597626U (en) | Novel 3D box dam ceramic substrate | |
| CN212587495U (en) | Semiconductor product electric connection structure and electronic product | |
| CN210351985U (en) | Miniature electronic circuit device | |
| CN218499342U (en) | Copper ceramic circuit board is covered in graphite alkene heat dissipation | |
| CN213818360U (en) | High-efficient radiating bluetooth circuit board | |
| CN215578508U (en) | Semiconductor circuit having a plurality of transistors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |