CN112490233A - Intelligent power module and manufacturing method thereof - Google Patents

Intelligent power module and manufacturing method thereof Download PDF

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Publication number
CN112490233A
CN112490233A CN202011463564.0A CN202011463564A CN112490233A CN 112490233 A CN112490233 A CN 112490233A CN 202011463564 A CN202011463564 A CN 202011463564A CN 112490233 A CN112490233 A CN 112490233A
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China
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substrate
mounting surface
layer
circuit layer
heat dissipation
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CN202011463564.0A
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Chinese (zh)
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谢荣才
左安超
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Guangdong Huizhi Precision Instrument Co ltd
Guangdong Huizhi Precision Manufacturing Co ltd
Guangdong Huixin Semiconductor Co Ltd
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Guangdong Huizhi Precision Instrument Co ltd
Guangdong Huizhi Precision Manufacturing Co ltd
Guangdong Huixin Semiconductor Co Ltd
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Priority to CN202011463564.0A priority Critical patent/CN112490233A/en
Publication of CN112490233A publication Critical patent/CN112490233A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention relates to an intelligent power module and a manufacturing method thereof.A first substrate and a second substrate which are arranged at an upper layer and a lower layer are arranged, so that an installation space is formed between the two substrates to install electronic elements and pins, radiators are installed at the upper outer side surface and the lower outer side surface of the first substrate and the second substrate, and the first substrate and the second substrate are connected through a bendable film circuit layer, so that the IPM module forms an upper laminated structure and a lower laminated structure, and the electronic elements can be installed at the upper layer and the lower layer, thereby effectively improving the circuit distribution density of the module, effectively reducing the surface area size of the IPM module, effectively realizing the miniaturization of the IPM module and reducing the cost. And because the upper layer and the lower layer of the structure mode can enable the circuit of the high-voltage power device and the low-voltage control circuit to be respectively arranged at the two layers, the electrical distance between the high-voltage power device and the low-voltage control circuit is realized, the interference of the high-voltage power device on the low-voltage control circuit is reduced, and the working stability and the reliability of the IPM module are improved.

Description

Intelligent power module and manufacturing method thereof
Technical Field
The invention relates to an intelligent power module and a manufacturing method of the intelligent power module, and belongs to the technical field of power semiconductor devices.
Background
In an Intelligent Power Module (IPM), an IC drive control circuit, a switching tube sampling amplification circuit, a PFC current protection circuit and the like, and an inverter circuit consisting of a low-voltage control circuit and a high-voltage Power device is arranged on the same plate, the high-voltage Power device is easy to generate interference by multiple low-voltage control circuits in the working process, and meanwhile, the existing IPM Intelligent Power Module only integrates a single IPM Module, and the integration of multiple IPM Intelligent Power modules is not realized, so that higher requirements are provided for the high integration and high heat dissipation technology of the IPM Intelligent Power Module in the face of market miniaturization and low cost competition.
Disclosure of Invention
The technical problem to be solved by the invention is to solve the problems that a high-voltage power device inside the IPM module is easy to interfere with a low-voltage control circuit in the working process of the conventional IPM module, and the module inside the IPM module only comprises one module circuit, so that the cost is higher.
Specifically, the invention discloses an intelligent power module, comprising
The first substrate and the second substrate are arranged oppositely up and down, the first substrate comprises a first mounting surface for mounting a power device and a first radiating surface for radiating, the second substrate comprises a second mounting surface for mounting the power device and a second radiating surface for radiating, the first mounting surface and the second mounting surface are arranged in a downward facing manner, and the first radiating surface and the second radiating surface are arranged in an outward facing manner;
a plurality of electronic components including power devices, the electronic components being mounted on the first mounting surface and the second mounting surface;
the bendable thin film circuit layer is arranged at one end of the first substrate and the second substrate on the same side so as to be electrically connected with the first substrate and the second substrate;
the pins are arranged and electrically connected to the other ends of the first substrate and the second substrate on the same side;
the packaging body at least wraps and fills the space between the first mounting surface and the second mounting surface, and the pins are exposed out of the packaging body;
and the radiator is arranged on the first radiating surface and the second radiating surface.
Optionally, the first substrate and the second substrate include a metal heat dissipation layer, an insulating layer, and a circuit layer, which are sequentially connected, wherein the first mounting surface and the second mounting surface are disposed on the circuit layer, and the first heat dissipation surface and the second heat dissipation surface are disposed on the metal heat dissipation layer.
Optionally, the first substrate and the second substrate include a non-metal heat dissipation layer and a circuit layer, which are sequentially connected, wherein the first mounting surface and the second mounting surface are disposed on the circuit layer, and the first heat dissipation surface and the second heat dissipation surface are disposed on the non-metal heat dissipation layer.
Alternatively, the circuit layer is formed by etching from a copper foil on the insulating layer; or by printing a paste-like conductive medium on the insulating layer.
Optionally, the film circuit layer comprises an insulating film layer on the surface and a conductive medium layer positioned in the middle of the insulating film layer, and the film circuit layer is manufactured based on a flexible copper clad laminate process or a wire arranging process; the conductive medium layer and the circuit layer are integrally formed.
Optionally, the package body extends towards both ends of the first substrate and the second substrate to form a first protruding portion and a second protruding portion, and the first protruding portion and the second protruding portion are provided with a matching structure with the heat sink.
Optionally, the fitting structure is a rib provided with the first protruding part and a groove provided with the second protruding part and the groove provided with the radiator correspondingly; or the matching structure is a groove which is respectively arranged on the first protruding part and the second protruding part and a convex rib which is correspondingly arranged on the radiator.
Optionally, the first and second heat dissipating surfaces are 0.1-0.5mm higher than the first and second protrusions, respectively.
The invention also provides a manufacturing method of the intelligent power module, which is characterized by comprising the following steps:
arranging a first substrate, a second substrate and a film circuit layer in a carrier;
arranging pins and a plurality of electronic components including power devices on the first mounting surface and the second mounting surface;
respectively electrically connecting jumper wires with the first mounting surface, the thin film circuit layer, the second mounting surface and the thin film circuit layer to form a first semi-finished product;
bending the film circuit layer of the first semi-finished product in a pair manner to form a second semi-finished product, enabling the first mounting surface and the second mounting surface to be opposite inwards, and arranging the second semi-finished product in a packaging mold;
the packaging method comprises the steps that glue is poured into a packaging mold to form a packaging body, a second semi-finished product containing the packaging body forms a third semi-finished product, the packaging body is located between a first mounting surface and a second mounting surface, the first heat dissipation surface and the second heat dissipation surface are exposed outwards, and the packaging body extends outwards on two sides of the first mounting surface and the second mounting surface to form a first protruding portion and a second protruding portion respectively;
and mounting the radiator on the third semi-finished product, wherein one side of the radiator is open, and upper and lower contact surfaces are arranged in the radiator and are respectively contacted with the first mounting surface and the second mounting surface.
The intelligent power module comprises a first substrate and a second substrate which are arranged at an upper layer and a lower layer, wherein an installation space is formed between the first substrate and the second substrate, a first installation surface and a second installation surface for installing electronic elements are arranged in the installation space, so that the electronic elements arranged on the two installation surfaces are also arranged in the installation space, a radiator is arranged at the upper outer side surface and the lower outer side surface of the first substrate and the second substrate, namely a first radiating surface and a second radiating surface, and the first substrate and the second substrate are connected through a bendable film circuit layer, so that the IPM module forms an upper-lower laminated structure, the upper layer and the lower layer can be provided with the electronic elements, the circuit distribution density of the module is effectively improved, the surface area size of the IPM module is effectively reduced, the miniaturization of the IPM module can be effectively realized, and the cost is reduced. And because the upper layer and the lower layer of the structure mode can enable the circuit of the high-voltage power device and the low-voltage control circuit to be respectively arranged at the two layers, the electrical distance between the high-voltage power device and the low-voltage control circuit is realized, the interference of the high-voltage power device on the low-voltage control circuit is reduced, and the working stability and the reliability of the IPM module are improved.
Drawings
FIG. 1 is a simplified diagram of a semi-finished IPM module in accordance with an embodiment of the present invention;
FIG. 2 is a cross-sectional view of an IPM module in accordance with an embodiment of the invention;
FIG. 3 is a flowchart illustrating a method for fabricating an IPM module according to an embodiment of the invention.
Reference numerals:
the IPM module 100, the first substrate 10, the first mounting surface 11, the first heat dissipation surface 12, the second substrate 20, the second mounting surface 21, the second heat dissipation surface 22, the package 30, the first protrusion 31, the second protrusion 32, the groove 321, the heat sink 40, the rib 41, the heat dissipation fin 42, the electronic component 50, the jumper wire 60, the pin 70, and the thin film circuit layer 80.
Detailed Description
It is to be noted that the embodiments and features of the embodiments may be combined with each other without conflict in structure or function. The present invention will be described in detail below with reference to examples.
The invention provides an intelligent power module, namely an IPM module. As shown in fig. 1 to 2, an IPM module 100 of the embodiment of the present invention includes a first substrate 10 and a second substrate 20 disposed opposite to each other in an up-down direction, a plurality of electronic components 50 including power devices, a flexible thin film circuit layer 80, a plurality of leads 70, a package 30, and a heat sink 40. The first substrate 10 comprises a first mounting surface 11 for mounting a power device and a first heat dissipation surface 12 for dissipating heat, the second substrate 20 comprises a second mounting surface 21 for mounting the power device and a second heat dissipation surface 22 for dissipating heat, the first mounting surface 11 and the second mounting surface 21 are arranged inwards, and the first heat dissipation surface 12 and the second heat dissipation surface 22 are arranged outwards; the thin film circuit layer 80 is disposed at one end of the first substrate 10 and the second substrate 20 on the same side to electrically connect the first substrate 10 and the second substrate 20; a plurality of pins 70 are disposed and electrically connected to the other ends of the first substrate 10 and the second substrate 20 on the same side; the package body 30 at least wraps and fills the space between the first mounting surface 11 and the second mounting surface 21, and the pins 70 are exposed from the package body 30; the heat sink 40 is mounted to the first and second heat radiating surfaces 12 and 22. Unlike the conventional arrangement mode in which the IPM module 100 has one substrate, the IPM module 100 of the embodiment of the present invention includes a first substrate 10 and a second substrate 20, which are stacked up and down, wherein an installation space is formed between the first substrate 10 and the second substrate 20, a first installation surface 11 and a second installation surface 21 of the first substrate for installing an electronic component 50 are disposed in the installation space, so that the electronic component 50 installed on the two installation surfaces is also installed in the installation space, and a heat sink 40 is installed on upper and lower outer surfaces of the first substrate 10 and the second substrate 20, i.e., a first heat dissipation surface 12 and a second heat dissipation surface 22, and the first substrate 10 and the second substrate 20 are connected by a flexible thin film circuit layer 80, so that the IPM module 100 forms a stacked structure, and the electronic component 50 can be installed on both the upper and lower layers, thereby effectively increasing the circuit distribution density of the module, and effectively reducing the surface area of the IPM module 100, this can effectively reduce the size of the IPM module 100, thereby reducing the cost. And because the upper and lower two-layer structural mode can make the circuit of high-voltage power device and low-voltage control circuit set up in two-layer respectively to this realizes the electric distance of the two, reduces the interference of high-voltage power device to low-voltage control circuit, thereby has improved the job stabilization nature and the reliability of IPM module 100.
In some embodiments of the present invention, as shown in fig. 1 and 2, the first substrate 10 and the second substrate 20 include a metal heat dissipation layer (not shown), an insulating layer (not shown), and a circuit layer (not shown) connected in sequence, wherein the first mounting surface 11 and the second mounting surface 21 are disposed on the circuit layer, and the first heat dissipation surface 12 and the second heat dissipation surface 22 are disposed on the metal heat dissipation layer. The metal heat dissipation layer can be a rectangular plate made of metal materials with good heat conduction performance such as aluminum and copper, for example, aluminum made of materials such as 1100 and 5052, the thickness of the rectangular plate is larger than that of other layers, generally ranges from 0.8mm to 2mm, and the common thickness is 1.5mm, so that the heat conduction and heat dissipation effects are mainly achieved. The surface of the metal heat dissipation layer is connected with an insulating layer, and the thickness of the insulating layer is thinner than that of the circuit substrate, generally 50um to 150um, and is usually 110 um. The circuit layer is made of metal such as copper and is insulated from the metal heat dissipation layer, the circuit layer comprises circuit lines made of etched copper foil, and the thickness of the circuit layer is relatively thin, such as about 70 um; or the circuit layer is formed by printing paste-shaped conductive media, and the conductive media can be graphene, tin paste, silver paste and other conductive materials. Mounting sites for electronic components are provided on the circuit layer to mount the electronic components 50 and the leads 70. The package body 30 is mainly formed of an injection molding material, which may be a resin.
In some embodiments of the present invention, the first substrate 10 and the second substrate 20 include a non-metal heat dissipation layer (not shown) and a circuit layer connected in sequence, wherein the first mounting surface 11 and the second mounting surface 21 are disposed on the circuit layer, and the first heat dissipation surface 12 and the second heat dissipation surface 22 are disposed on the non-metal heat dissipation layer. The difference from the previous embodiment is that the non-metal heat dissipation layer is used to replace the metal heat dissipation layer, the non-metal heat dissipation layer can be made of insulating materials with good heat conduction performance such as glass and ceramic, and the non-metal heat dissipation layer body is insulated, so that the insulating layer is omitted compared with the previous embodiment, the circuit layer is directly arranged on the surface of the non-metal heat dissipation layer, the process of the circuit layer is the same as that of the previous embodiment in the insulating layer, and the description is omitted here.
In a next embodiment of the present invention, the thin film circuit layer 80 is manufactured based on a flexible copper clad laminate process or a flex cable process. Referring to fig. 1 and 2, the thin film circuit layer 80 electrically connects the circuit layers of the first substrate 10 and the second substrate 20, and is a flexible soft structure, such as a flex cable process for connecting a circuit board similar to a display screen of a mobile phone so as to be bendable. The thin film circuit layer 80 is configured as a flexible soft body structure, so that the first substrate 10 and the second substrate 20 are electrically connected at a short distance at one side of the two through the thin film circuit layer 80 after being stacked up and down.
When the first substrate 10, the second substrate 20 and the thin film circuit layer 80 are manufactured, as shown in fig. 1, a metal heat dissipation layer and an insulating layer of the first substrate 10 and the second substrate 20 may be manufactured at the same time, or a non-metal heat dissipation layer of these substrates and an insulating thin film layer of the thin film circuit layer 80 may be manufactured at the same time for a substrate having no metal heat dissipation layer, and a conductive medium may be simultaneously formed on the insulating layer or the non-metal heat dissipation layer and the insulating thin film layer of the first substrate 10 and the second substrate 20 by printing and other processes, so that the circuit layer of the first substrate 10 and the second substrate 20 and the conductive medium layer of the thin film circuit layer 80 are simultaneously formed and integrally connected, which facilitates the manufacturing and indicates the manufacturing efficiency of the whole semi-finished product.
The thin film wiring layer 80 is mounted on one side of the two substrates, which effectively reduces the mounting space occupied by the first and second substrates 10 and 20 and the first semi-finished product formed by the thin film wiring layer 80.
Further, in a lower embodiment of the present invention, a plurality of jumpers 60 are further disposed on the circuit layer to electrically connect the plurality of electronic components 50, and/or a plurality of jumpers 60 electrically connect the electronic components 50 with the first mounting surface 11, and/or a plurality of jumpers 60 electrically connect the electronic components 50 with the second mounting surface 21. The jumper wire 60 is made of metal material, such as aluminum, copper, gold, silver and other materials with good welding and electric conductivity of substrates, and the connection of the jumper wire 60 can be realized through keys and machine binding wires.
Specifically, the jumper lines 60 may connect the electronic element 50 and the electronic element 50 on one substrate, may connect the electronic element 50 and a circuit layer, and may also serve as a jumper line to connect the circuit layer; the jumper wires 60 may also connect the electronic element 50 and the electronic element 50 on the thin film circuit layer 80, connect the electronic element 50 to a conductive medium layer, or be used as a jumper wire to connect the conductive medium layer; these jumpers 60 may also connect the substrate and the thin film wiring layer 80, such as connecting the electronic component 50 on the substrate and the conductive medium layer on the thin film wiring layer 80, or connecting the circuit layer on the substrate and the electronic component 50 on the thin film wiring layer 80, or connecting the circuit layer on the substrate and the conductive medium layer on the thin film wiring layer 80.
In a lower embodiment of the present invention, as shown in fig. 2, the package 30 extends toward both ends of the first and second substrates 10 and 20 to form first and second protruding parts 31 and 32, and the first and second protruding parts 31 and 32 are provided with a fitting structure with the heat sink 40. The package 30, in addition to sealing the mounting space between the first substrate 10 and the second substrate 20, extends out toward both ends of the two substrates to form a first protrusion 31 and a second protrusion 32, the first protrusion 31 and the second protrusion 32 have a thickness approximately corresponding to the distance between the first heat dissipation surface 12 and the second heat dissipation surface 22, and the first protrusion 31 and the second protrusion 32 are respectively provided with a fitting structure with the heat sink 40 to achieve fitting with the heat sink 40, so that the inner side surface of the heat sink 40 makes good contact with the first heat dissipation surface 12 and the second heat dissipation surface 22 to achieve heat transfer. The heat sink 40 may be composed of upper and lower sub-heat sinks 40 corresponding to the first substrate 10 and the second substrate 20, the two sub-heat sinks 40 are respectively installed in cooperation with the first heat dissipation surface 12 and the second heat dissipation surface 22 through cooperation, and the connection between the two sub-heat sinks 40 may be further realized at one end of the two sub-heat sinks 40 through a connection structure such as a column and groove structure. Or the heat sink 40 is an integrally formed structure, a groove is formed in the middle of the heat sink, the size of the groove is adapted to the size of the space occupied by the first substrate 10, the second substrate 20 and the protruding portions at the two ends, and the first substrate 10, the second substrate 20 and the protruding portions and the heat sink 40 are installed in a matched manner by arranging a matching structure matched with the wall surfaces of the groove on the protruding portions. Wherein the matching structures can be simultaneously arranged on the upper and lower surfaces of the first protrusion 31 and the upper and lower surfaces of the second protrusion 32, thereby achieving good installation and heat transfer of the heat sink 40, which is an integrally formed middle slotted structure in fig. 2.
Specifically, in some embodiments of the present invention, as shown in fig. 2, the matching structure is a groove 321 provided with the first protrusion 31 and the second protrusion 32, respectively, and a rib 41 provided with the heat sink 40 correspondingly. Grooves 321 are respectively formed on the surfaces of the first protruding portion 31 and the second protruding portion 32, and ribs 41 are respectively correspondingly formed on the wall surfaces of the grooves of the heat sink 40, so that the heat sink 40 is inserted from one side of the first base plate 10 and the second base plate 20, and the heat sink 40 is quickly mounted through the matching and guiding of the ribs 41 and the grooves 321.
Alternatively, in some embodiments of the present invention, the matching structures are ribs respectively provided with the first protruding portion 31 and the second protruding portion 32 and grooves correspondingly provided with the heat sink 40, and unlike the matching structure of the previous embodiment, the embodiment is provided with the ribs at the protruding portions and the corresponding grooves at the wall surfaces of the grooves of the heat sink 40, so that the quick installation of the two is commonly realized.
In a lower embodiment of the present invention, the first and second heat dissipating surfaces 12 and 22 are raised 0.1-0.5mm above the thickness of the first and second protrusions 31 and 32, respectively. As shown in fig. 2, the distance between the upper and lower wall surfaces of the groove of the heat sink 40 is equal to the thickness of the first protrusion 31 and the second protrusion 32, and the first heat dissipation surface 12 and the second heat dissipation surface 22 are slightly higher than the thickness of the protrusion, such as 0.2mm, respectively, so that when the heat sink 40 is mounted on the first protrusion 31 and the second protrusion 32, the wall surfaces of the groove form an interference fit with the first heat dissipation surface 12 and the second heat dissipation surface 22, so that the two form a close contact, thereby improving the heat transfer effect, and finally improving the heat dissipation capability of the heat sink 40 to the high heat generated by the power device.
In a lower embodiment of the present invention, the heat sink 40 is a sheet, and the outer surface of the heat sink 40 is provided with heat dissipation fins 42. As shown in fig. 2, the heat dissipation capability of the heat sink 40 can be effectively improved by disposing a plurality of heat dissipation fins 42 distributed in parallel on the outer surface, the heat can be quickly absorbed through the air slot in the middle to be discharged by disposing the structure of the plate-shaped heat dissipation fins,
the present invention further provides a manufacturing method of the IPM module 100 according to the above embodiment, as shown in fig. 3, the manufacturing method includes the following steps:
step S100, disposing the first substrate 10, the second substrate 20 and the thin film circuit layer 80 in a carrier;
step S200 of disposing the pins 70 and the plurality of electronic components 50 including the power device on the first mounting surface 11 and the second mounting surface 21;
step 300, electrically connecting the jumper wire 60 with the first mounting surface 11 and the thin-film circuit layer 80 and the second mounting surface 21 and the thin-film circuit layer 80 respectively to form a first semi-finished product;
step S400, oppositely bending the film circuit layer 80 of the first semi-finished product to form a second semi-finished product, enabling the first mounting surface 11 and the second mounting surface 21 to be opposite inwards, and arranging the second semi-finished product in a packaging mold;
step S500, performing glue filling on the package mold to form a package body 30, forming a second semi-finished product including the package body 30 into a third semi-finished product, wherein the package body 30 is located between the first mounting surface 11 and the second mounting surface 21, the first heat dissipation surface 12 and the second heat dissipation surface 22 are exposed towards the outside, and the package body 30 extends outwards at two sides of the first mounting surface 11 and the second mounting surface 21 to form a first protrusion 31 and a second protrusion 32, respectively;
step S600, mounting the heat sink 40 on the third semi-finished product, wherein one side of the heat sink 40 is open, and upper and lower contact surfaces are arranged inside the heat sink 40 and are respectively in contact with the first mounting surface 11 and the second mounting surface 21.
In step S100, as shown in fig. 1, the first substrate 10, the second substrate 20 and the thin film circuit layer 80 may be placed in a special carrier (not shown), wherein the carrier may be made of a material with a high temperature resistance of 200 ℃ or higher, such as aluminum, synthetic stone, ceramic, PPS, etc.
It should be noted that, in step S100, before the substrate and the thin film circuit layer 80 are placed in the carrier, a plurality of processes for forming the first substrate 10 and the second substrate 20 may be further included. According to the technical scheme, the method comprises the following steps that according to the circuit layout, a metal heat dissipation layer with a proper size is designed, the metal heat dissipation layer is taken as an aluminum substrate for example, the aluminum substrate is formed in a mode of directly carrying out routing treatment on 1m multiplied by 1m aluminum material, a routing knife uses high-speed steel as a material, a motor rotates at a speed of 5000 revolutions per minute, and the routing knife is set at a right angle with the plane of the aluminum material; or may be formed by stamping. Then, an insulating layer is arranged on one surface of the metal heat dissipation layer, a copper foil is pressed on the surface of the insulating layer, then the copper foil is etched, and the copper foil is locally taken out to form a circuit layer, wherein the circuit layer comprises a circuit line and a bonding pad arranged close to the side edge of the metal heat dissipation layer, the circuit layer of the first substrate 10 and the circuit layer of the second substrate 20 respectively form a first mounting surface 11 and a second mounting surface, the other exposed surface of the metal heat dissipation layer of the first substrate 10 forms a first heat dissipation surface 12, and the other exposed surface of the metal heat dissipation layer of the second substrate 20 forms a second heat dissipation surface 22.
When the first substrate 10 and the second substrate 20 are formed, the thin film circuit layer 80 may be formed at the same time, specifically, an insulating thin film layer may be formed first, and then the conductive medium layer is printed on the insulating thin film layer based on a printing process, it should be noted that the circuit layers of the first substrate 10 and the second substrate 20 may also be formed by printing the conductive medium layer by a printing process, and the circuit layers of the first substrate 10 and the second substrate 20 and the conductive medium layer may be printed and integrated at the same time, thereby saving the process. Of course, the circuit layer and the conductive dielectric layer may be formed separately.
In step S200, the electronic component 50 and the pin 70 of the power device are mounted on the circuit layer by solder paste soldering or silver paste dispensing process, the electronic component 50 is mounted on the mounting position of the circuit layer by an automatic die bonder, and then the electronic component 50 and the pin 70 are soldered on the mounting position by a reflow oven.
In step S300, in this step, the jumper 60 may electrically connect the circuit layer of the first substrate 10 with the thin film wiring layer 80 by the binding device, and the circuit layer of the second substrate 20 with the thin film wiring layer 80 by the jumper 60, thereby achieving that the thin film wiring layer 80 electrically connects the first substrate 10 and the second substrate 20. Finally forming a first semi-finished product.
In step S400, as shown in fig. 2, the thin film circuit layer 80 of the first semi-finished product is bent to be stacked up and down, so that the first substrate 10 and the second substrate 20 are disposed on top of each other, the first mounting surface 11 and the second mounting surface 21 are located on the inner side, the thin film circuit layer 80 is disposed on the same side of the first substrate 10 and the second substrate 20 in a bending manner, and the leads 70 are disposed on the same side of the first substrate 10 and the second substrate 20, thereby forming a second semi-finished product. The second semi-finished product is then placed in a packaging mold (not shown) in which a cavity for injection molding and packaging is formed, and the first heat dissipation surface 12 and the second heat dissipation surface 22 are exposed on both the upper and lower surfaces of the packaging mold.
In step S500, a thermoplastic material, such as a resin, is injected into the mold cavity until the entire cavity is filled, the temperature within the cavity being typically about 180 ℃ as the resin material is injected. After cooling, the thermoplastic material forms an encapsulation layer, and the first substrate 10 and the second substrate 20 are all covered by the encapsulation layer on the side on which the electronic component 50 and the leads 70 are mounted. And the first and second heat-dissipating surfaces 12 and 22 are exposed from both the upper and lower surfaces of the package layer. And extend outward on both sides of the first and second mounting surfaces 11 and 21 to form first and second protruding portions 31 and 32, and form a fitting structure with an inner wall surface of the heat sink 40 on the first and second protruding portions 31 and 32. Finally forming a third semi-finished product.
In step S600, the heat sink 40 is mounted on the third semi-finished product, wherein the heat sink 40 is open on one side and the inner vertical wall surfaces are in contact with the first mounting surface 11 and the second mounting surface 21, respectively. Specifically, the fitting structure between the heat sink 40 and the first protrusion 31 and the second protrusion 32 is to provide the rib 41 corresponding to the first protrusion 31 and the second protrusion 32 and the groove 321 corresponding to the heat sink 40. The first protrusion 31 and the second protrusion 32 are respectively provided with a rib 41 on the surface, and the heat sink 40 is correspondingly provided with a groove 321 on the wall surface of the groove, so that the heat sink 40 is inserted from one side of the first base plate 10 and the second base plate 20, and the heat sink 40 is quickly mounted through the matching and guiding of the rib 41 and the groove 321. Or, the matching structure is a groove 321 and a rib 41, which are respectively provided with the first protrusion 31 and the second protrusion 32, and correspondingly provided with the heat sink 40, different from the matching structure of the previous embodiment, in which the groove 321 is provided in the protrusion, and the corresponding rib 41 is avoided in the groove of the heat sink 40, so that the quick installation of the two is commonly realized.
Further, in step S500, the first heat dissipation surface 12 and the second heat dissipation surface 22 may be further raised by 0.1-0.5mm above the thickness of the first protrusion 31 and the second protrusion 32, respectively. As shown in fig. 2, the height of the heat sink 40 in the up-down direction of the slot is equal to the thickness of the first protrusion 31 and the second protrusion 32, and the first heat dissipation surface 12 and the second heat dissipation surface 22 are slightly higher than the thickness of the protrusions, such as 0.2mm, so that in step S600, when the heat sink 40 is mounted on the first protrusion 31 and the second protrusion 32, the wall surface of the slot forms an interference fit with the first heat dissipation surface 12 and the second heat dissipation surface 22, so that the two form a close contact, thereby improving the heat transfer effect, and finally improving the heat dissipation capability of the heat sink 40 to the high heat generated by the power device.
The method for manufacturing the intelligent power module comprises the steps of arranging a first substrate 10, a second substrate 20 and a film circuit layer 80 in a carrier, arranging a plurality of electronic elements 50 containing power devices and pins 70 on a first mounting surface 11 and a second mounting surface 21, respectively, electrically connecting jumper wires 60 with the first mounting surface 11, the film circuit layer 80, the second mounting surface 21 and the film circuit layer 80 to form a first semi-finished product, oppositely bending the film circuit layer 80 of the first semi-finished product to form a second semi-finished product, enabling the first mounting surface 11 and the second mounting surface 21 to be opposite inwards, arranging the second semi-finished product in a packaging mold, and pouring glue into the packaging mold to form a packaging body 30 to form a third semi-finished product, wherein the packaging body 30 is positioned between the first mounting surface 11 and the second mounting surface 21, and a first heat dissipation surface 12 and a second heat dissipation surface 22 are exposed outwards, and the package 30 extends outwards at two sides of the first mounting surface 11 and the second mounting surface 21 to form a first protrusion 31 and a second protrusion 32, respectively, and finally the heat sink 40 is mounted on the third semi-finished product, wherein one side of the heat sink 40 is open, and upper and lower contact surfaces are arranged inside the heat sink 40 and are in contact with the first mounting surface 11 and the second mounting surface 21, respectively. Therefore, the IPM module 100 forms an upper and lower laminated structure, and the electronic component 50 can be mounted on both the upper and lower layers, so that the circuit distribution density of the module is effectively improved, the surface area of the IPM module 100 is effectively reduced, the IPM module 100 can be effectively miniaturized, and the cost is reduced. And because the upper and lower two-layer structural mode can make the circuit of high-voltage power device and low-voltage control circuit set up in two-layer respectively to this realizes the electric distance of the two, reduces the interference of high-voltage power device to low-voltage control circuit, thereby has improved the job stabilization nature and the reliability of IPM module 100.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (10)

1. A smart power module, comprising:
the first substrate and the second substrate are arranged oppositely up and down, the first substrate comprises a first mounting surface for mounting a power device and a first radiating surface for radiating, the second substrate comprises a second mounting surface for mounting the power device and a second radiating surface for radiating, the first mounting surface and the second mounting surface are arranged in a downward facing manner, and the first radiating surface and the second radiating surface are arranged in an outward facing manner;
a plurality of electronic components including power devices, the electronic components being mounted on the first mounting surface and the second mounting surface;
the bendable thin film circuit layer is arranged at one end of the first substrate and the second substrate on the same side so as to be electrically connected with the first substrate and the second substrate;
the pins are arranged and electrically connected to the other ends of the first substrate and the second substrate on the same side;
the packaging body at least wraps and fills the space between the first mounting surface and the second mounting surface, and the pins are exposed out of the packaging body;
and the radiator is arranged on the first radiating surface and the second radiating surface.
2. The smart power module of claim 1, wherein the first and second substrates comprise a metal heat dissipation layer, an insulating layer, and a circuit layer connected in sequence, wherein the first and second mounting surfaces are disposed on the circuit layer, and the first and second heat dissipation surfaces are disposed on the metal heat dissipation layer.
3. The smart power module of claim 1, wherein the first and second substrates comprise a non-metal heat sink layer and a circuit layer connected in sequence, wherein the first and second mounting surfaces are disposed on the circuit layer, and the first and second heat sink surfaces are disposed on the non-metal heat sink layer.
4. The smart power module of claim 2 or 3, wherein the circuit layer is formed by etching from a copper foil on the insulating layer; or by printing a paste-like conductive medium on the insulating layer.
5. The intelligent power module according to claim 1, wherein the thin film circuit layer comprises an insulating thin film layer on the surface and a conductive medium layer positioned in the middle of the insulating thin film layer, and the thin film circuit layer is manufactured based on the flexible copper clad laminate process or a wire arranging process; the conductive medium layer and the circuit layer are integrally formed.
6. The smart power module of claim 1, wherein the package extends toward both ends of the first and second substrates to form first and second tabs, the first and second tabs being provided with mating structures with the heat sink.
7. The smart power module as recited in claim 6 wherein the mating structures are ribs provided with the first and second protrusions, respectively, and grooves provided with the heat sink correspondingly; or the matching structure is a groove which is respectively arranged on the first protruding part and the second protruding part and a convex rib which is correspondingly arranged on the radiator.
8. The smart power module of claim 6, wherein the first and second heat dissipating surfaces are 0.1-0.5mm higher than the first and second tab thicknesses, respectively.
9. The smart power module of claim 1 further comprising a plurality of jumpers electrically connecting the plurality of electronic components; and/or the plurality of jumper wires electrically connect the electronic element with the first mounting surface; and/or the plurality of jumper wires electrically connect the electronic element with the second mounting surface.
10. A method of manufacturing a smart power module according to any one of claims 1 to 9, characterized in that the method of manufacturing comprises the steps of:
arranging a first substrate, a second substrate and a film circuit layer in a carrier;
arranging pins and a plurality of electronic components including power devices on the first mounting surface and the second mounting surface;
respectively electrically connecting jumper wires with the first mounting surface, the thin film circuit layer, the second mounting surface and the thin film circuit layer to form a first semi-finished product;
bending the film circuit layer of the first semi-finished product in a pair manner to form a second semi-finished product, enabling the first mounting surface and the second mounting surface to be opposite inwards, and arranging the second semi-finished product in a packaging mold;
the packaging mold is filled with glue to form a packaging body, a second semi-finished product containing the packaging body forms a third semi-finished product, the packaging body is located between the first mounting surface and the second mounting surface, the first heat dissipation surface and the second heat dissipation surface are exposed outwards, and the packaging body extends outwards on two sides of the first mounting surface and the second mounting surface to form a first protruding portion and a second protruding portion respectively;
and mounting a radiator on the third semi-finished product, wherein one side of the radiator is provided with an opening, and upper and lower contact surfaces are arranged in the radiator and are respectively contacted with the first mounting surface and the second mounting surface.
CN202011463564.0A 2020-12-11 2020-12-11 Intelligent power module and manufacturing method thereof Pending CN112490233A (en)

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CN113314515A (en) * 2021-06-09 2021-08-27 广东汇芯半导体有限公司 Semiconductor circuit and method for manufacturing semiconductor circuit

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CN110767614A (en) * 2019-10-10 2020-02-07 华为技术有限公司 Packaging structure and electronic device
CN111584443A (en) * 2020-05-26 2020-08-25 忱芯科技(上海)有限公司 Double-sided heat dissipation power module and control method of double-sided parallelism thereof
CN214705926U (en) * 2020-12-11 2021-11-12 广东汇芯半导体有限公司 Intelligent power module

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CN209592033U (en) * 2019-04-03 2019-11-05 比亚迪股份有限公司 Power semiconductor modular and vehicle
CN110767614A (en) * 2019-10-10 2020-02-07 华为技术有限公司 Packaging structure and electronic device
CN111584443A (en) * 2020-05-26 2020-08-25 忱芯科技(上海)有限公司 Double-sided heat dissipation power module and control method of double-sided parallelism thereof
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