CN113314515A

CN113314515A - Semiconductor circuit and method for manufacturing semiconductor circuit

Info

Publication number: CN113314515A
Application number: CN202110642252.4A
Authority: CN
Inventors: 王敏; 左安超; 谢荣才
Original assignee: Guangdong Huixin Semiconductor Co Ltd
Current assignee: Guangdong Huixin Semiconductor Co Ltd
Priority date: 2021-06-09
Filing date: 2021-06-09
Publication date: 2021-08-27

Abstract

The invention relates to a semiconductor circuit and a preparation method thereof.A MCU chip is integrated outside the semiconductor circuit by bending an electric connection wire group between a first substrate and a second substrate, a first plate surface of the second substrate is close to the first substrate, and a second plate surface of the second substrate is exposed out of a sealing body. Thereby realizing the zero-distance transmission of control signals and reducing the area of the glass fiber board; meanwhile, strong current and weak current are separated in the same semiconductor circuit, the anti-interference capacity of the whole semiconductor circuit is improved, electric control is miniaturized, wiring is more flexible, the cost is low, the product size is further reduced, and in addition, the MCU chip is convenient to replace and disassemble.

Description

Semiconductor circuit and method for manufacturing semiconductor circuit

Technical Field

The invention relates to a semiconductor circuit and a preparation method of the semiconductor circuit, and belongs to the technical field of power semiconductor devices.

Background

A semiconductor circuit is a power-driven type product that combines power electronics and integrated circuit technology. The semiconductor circuit integrates a power switching device and a high-voltage driving circuit, and incorporates a fault detection circuit for detecting an overvoltage, an overcurrent, an overheat, and the like. The semiconductor circuit receives the control signal of the CPU or the DSP to drive the subsequent circuit to work, and sends the state detection signal of the system back to the CPU or the DSP for processing. Compared with the traditional discrete scheme, the semiconductor circuit gains a bigger and bigger market with the advantages of high integration degree, high reliability and the like, is particularly suitable for frequency converters of driving motors and various inverter power supplies, and is an ideal power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances. The semiconductor circuit is composed of a high-speed low-power-consumption tube core, an optimized gate-level driving circuit and a quick protection circuit. Even if a load accident or improper use occurs, the semiconductor circuit itself can be prevented from being damaged. In general, a semiconductor circuit uses an IGBT as a power switching element, and has an integrated structure in which a current sensor and a driving circuit are incorporated. In the face of market miniaturization and low cost competition, higher requirements are put forward on high integration and high heat dissipation technology of semiconductor circuits.

In the implementation process, the inventor finds that at least the following problems exist in the conventional technology: in the existing semiconductor circuit, a high-voltage module consisting of a low-voltage control circuit and a high-voltage power device is arranged on the same substrate, so that the whole semiconductor circuit is poor in anti-interference capability; in addition, the existing semiconductor circuit separates a strong current module consisting of a low-voltage control circuit and a high-voltage power device on different boards, so that the transmission distance of control signals is long, the anti-interference capability of the whole system is poor, the integration degree is low, the wiring is complex, and the cost is high.

Disclosure of Invention

Therefore, in the conventional process of designing and preparing the semiconductor circuit, a high-voltage module consisting of a low-voltage control circuit and a high-voltage power device is required to be arranged on the same substrate for the conventional semiconductor circuit, so that the whole semiconductor circuit is poor in anti-interference capability; the existing semiconductor circuit separates a strong current module consisting of a low-voltage control circuit and a high-voltage power device on different boards, and has the problems of poor anti-jamming capability of the whole system, low integration degree, complex wiring and high cost due to long transmission distance of control signals. A semiconductor circuit and a method of manufacturing a semiconductor circuit are provided.

Specifically, the present invention discloses a semiconductor circuit comprising:

the first substrate is provided with a first insulating layer;

a circuit layer disposed on the first insulating layer;

the first ends of the pins are respectively electrically connected with the circuit layer;

the first end of the electrical connection wire set is electrically connected with the circuit layer;

the first surface of the second substrate is provided with an IC control circuit which is electrically connected with the second end of the electrical connection wire set; the second surface of the second substrate is provided with a chip mounting area for mounting the MCU chip, the chip mounting area is provided with a plurality of electrical connecting pieces, each electrical connecting piece is used for being connected with each pin of the MCU chip in a one-to-one correspondence manner, each electrical connecting piece is respectively electrically connected with the second end of the electrical connecting line group, and the IC control circuit is electrically connected with the corresponding electrical connecting piece;

the sealing body wraps the first substrate, the first plate surface of the second substrate provided with the IC control circuit and the circuit layer connected with the electrical connection wire group and the pins;

the second end of each pin is led out from the first side surface of the sealing body; the electrical connection line set is arranged between the first substrate and the second substrate in a bending mode, and the second plate surface of the second substrate is exposed out of the sealing body.

Optionally, the IC control circuit includes a first circuit wiring layer, and a first circuit element disposed on the first circuit wiring layer; the first circuit wiring layer is arranged on the first plate surface of the second substrate.

Optionally, the IC control circuitry comprises compressor control circuitry and/or fan control circuitry; the compressor control circuit includes respective first circuit wiring lines and respective first circuit elements in the first circuit wiring layer; the fan control circuit includes a respective first circuit wiring and a respective first circuit element in a first circuit wiring level.

Optionally, the electrical connection line group includes a wiring layer, a second insulation layer and a thin film layer; the second insulating layer is provided with a wiring layer, the thin film layer covers the wiring layer, the first end of the wiring layer is connected to the circuit layer, and the second end of the wiring layer is connected to the IC control circuit and the corresponding electric connecting piece respectively.

Optionally, a capacitance-resistance element is disposed near the second end of the electrical connection line set, and the capacitance-resistance element is electrically connected to the flat cable layer.

Optionally, the circuit layer includes a second circuit wiring layer, and a second circuit element disposed on the second circuit wiring layer; the second circuit wiring layer is provided on the first insulating layer.

Optionally, the circuit layer further includes a compressor inverter circuit and/or a fan inverter circuit, and the compressor inverter circuit includes corresponding second circuit wiring and second circuit elements in the second circuit wiring layer; the fan inverter circuit includes a corresponding second circuit wiring and a corresponding second circuit element in the second circuit wiring layer.

Optionally, the circuit layer further comprises a PFC circuit and/or a rectifier circuit; the PFC circuit includes a respective second circuit wiring and a second circuit element in the second circuit wiring layer; the rectifier circuit includes a corresponding second circuit wiring and a corresponding second circuit element in the second circuit wiring layer.

The invention also discloses a preparation method of the semiconductor circuit, which comprises the following steps:

providing a first substrate and a second substrate;

preparing a first insulating layer on a first substrate;

preparing a circuit layer on the first insulating layer;

preparing an IC control circuit on a first plate surface of a second substrate, arranging a chip mounting area for mounting an MCU chip on a second plate surface of the second substrate, preparing each electrical connecting piece in the chip mounting area, arranging a through hole on the second substrate, and connecting the IC control circuit with the corresponding electrical connecting piece by passing a first metal wire through the through hole;

the circuit layer is provided with an electrical connection wire set and a plurality of pins, the first ends of the electrical connection wire set are electrically connected with the circuit layer, and the first ends of the plurality of pins are respectively connected with the circuit layer through second metal wires;

bending the electrical connection wire set, and respectively connecting the IC control circuit and each electrical connection piece at the second end of the electrical connection wire set so as to enable the second substrate to be positioned right above the first substrate;

the method comprises the steps that a first substrate provided with a circuit layer, a plurality of pins and an electrical connection wire set and a first panel of a second substrate provided with an IC control circuit are subjected to injection molding through a packaging mold to form a sealing body, second ends of the plurality of pins are led out from a first side face of the sealing body respectively, and a second panel face of the second substrate provided with a chip mounting area is exposed from a second side face of the sealing body;

and arranging the MCU chip in the chip mounting area, and welding the pins of the MCU chip and the electric connecting pieces in a one-to-one correspondence manner to form a semiconductor circuit.

Optionally, the step of preparing the electrically connecting wire set includes:

providing a metal sheet;

preparing a wiring layer on the metal sheet;

covering a second insulating layer on the first surface of the flat cable layer;

covering a second surface of the second insulating layer opposite to the first surface with a thin film layer; the first end of the wiring layer is connected to the circuit layer, and the second end of the wiring layer is connected with the IC control circuit and the corresponding electric connecting piece respectively.

One of the above technical solutions has the following advantages and beneficial effects:

in the embodiments of the semiconductor circuit, the first substrate is provided with the first insulating layer, the circuit layer is disposed on the first insulating layer, the first ends of the plurality of pins are electrically connected to the circuit layer, and the first ends of the electrically connecting wire sets are electrically connected to the circuit layer; the first surface of the second substrate is provided with an IC control circuit which is electrically connected with the second end of the electrical connection wire set; the second surface of the second substrate is provided with a chip mounting area for mounting the MCU chip, the chip mounting area is provided with a plurality of electrical connecting pieces, each electrical connecting piece is used for being connected with each pin of the MCU chip in a one-to-one correspondence manner, each electrical connecting piece is respectively electrically connected with the second end of the electrical connecting line group, and the IC control circuit is electrically connected with the corresponding electrical connecting piece; the first substrate, the first plate surface of the second substrate provided with the IC control circuit and the circuit layer connected with the electrical connection wire group and the pins are wrapped by the sealing body, and the second ends of the pins are respectively led out from the first side surface of the sealing body; the electric connection wire group is bent and arranged between the first substrate and the second substrate, the second plate surface of the second substrate is exposed out of the sealing body, the MCU chip is integrated outside (on the second side surface) of the semiconductor circuit, the IC control circuit which does not have high heat dissipation requirements is arranged on the first plate surface of the second substrate, the MCU chip is arranged on the second plate surface of the second substrate, and therefore the thickness of the second substrate is only separated between the MCU chip and the IC control circuit, and the transmission distance of signals is greatly shortened. Thereby realizing the zero-distance transmission of control signals and reducing the area of the glass fiber board; meanwhile, strong current and weak current separation is realized in the same semiconductor circuit, so that the anti-interference capability of the whole semiconductor circuit is improved, the electric control is miniaturized, the wiring is more flexible, the cost is low, and the product volume is further reduced; in addition, when the semiconductor circuit breaks down, the MCU chip integrated outside the module can be taken out independently, so that the utilization rate of components is improved, and meanwhile, failure analysis is facilitated; when the MCU chip breaks down, the MCU chip can be replaced to remove the fault, so that the maintenance cost is reduced, and the product reliability is improved.

Drawings

FIG. 1 is a diagram of a conventional semiconductor circuit;

FIG. 2 is a schematic diagram of a first semi-finished semiconductor circuit according to an embodiment of the present invention;

FIG. 3 is a cross-sectional view taken along line X-X' of FIG. 1;

FIG. 4 is a schematic diagram of a second semi-finished semiconductor circuit according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of an internal product of a semiconductor circuit according to an embodiment of the present invention;

FIG. 6 is a schematic diagram of the external structure of an unassembled MCU chip of the semiconductor circuit according to the embodiment of the present invention;

FIG. 7 is a schematic diagram of an outline structure of an MCU chip mounted on a semiconductor circuit according to an embodiment of the present invention;

FIG. 8 is a flow chart of steps for fabricating a semiconductor circuit according to an embodiment of the present invention;

FIG. 9 is a flowchart illustrating a process for fabricating a set of electrical connections for a semiconductor circuit according to an embodiment of the present invention.

Reference numerals:

the semiconductor device comprises a semiconductor circuit 10, a first substrate 100, a first insulating layer 200, a circuit layer 300, a compressor inverter circuit 310, a fan inverter circuit 320, a PFC circuit 330, a rectifying circuit 340, an IC control circuit 400, a compressor control circuit 410, a fan control circuit 420, a capacitance-resistance element 430, a pin 500, an electrical connection wire set 600, a second insulating layer 610, a wire arrangement layer 620, a thin film layer 630, a second substrate 700, a chip mounting area 710, a sealing body 800, an electrical connection element 900 and an MCU chip 910.

Detailed Description

In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It is to be noted that the embodiments and features of the embodiments may be combined with each other without conflict in structure or function. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.

In a conventional semiconductor circuit, as shown in fig. 1, the semiconductor circuit includes an MCU chip, pins, and a package, wherein the MCU chip is packaged inside the package. When the MCU chip fails, the MCU chip is difficult to disassemble in the packaging body, and even if the MCU chip is forcibly disassembled, the whole semiconductor circuit is damaged, so that the whole semiconductor circuit is scrapped, the maintenance cost is increased, and resources are wasted; in addition, the MCU chip is integrated into the semiconductor circuit, secondary packaging is needed for the MCU chip, product reliability is affected, wiring is complex, and cost is high. In the traditional semiconductor circuit without the integrated MCU chip, the signal transmission distance between the semiconductor circuit and the MCU chip is longer, so that the whole system has poor anti-jamming capability and low integration degree. In addition, the semiconductor circuit lays out a strong current module consisting of a low-voltage control circuit and a high-voltage power device on the same substrate, so that the whole semiconductor circuit is easy to have poor anti-interference capability; if a strong current module consisting of a low-voltage control circuit and a high-voltage power device is separated on different boards, and the transmission distance of control signals is long, the anti-interference capability of the whole system is poor, the integration degree is low, the wiring is complex, and the cost is high.

In order to overcome the above-mentioned problems of the conventional semiconductor circuit, in one embodiment, as shown in fig. 2 to 7, the present invention provides a semiconductor circuit 10, the semiconductor circuit 10 includes a first substrate 100, a circuit layer 300, a plurality of leads 500, a set of electrical connection lines 600, a second substrate 700, and a sealing body 800. A first insulating layer 200 is disposed on the first substrate 100; the circuit layer 300 is disposed on the first insulating layer 200; the first ends of the plurality of pins 500 are electrically connected to the circuit layer 300, respectively; the first end of the electrical connection wire set 600 is electrically connected to the circuit layer 300; the first board surface of the second substrate 700 is provided with an IC control circuit 400, and the IC control circuit 400 is electrically connected to the second end of the electrical connection wire set 600; a chip mounting area 710 for mounting the MCU chip 910 is disposed on the second board surface of the second substrate 700, the chip mounting area 710 is provided with a plurality of electrical connectors 900, each electrical connector 900 is used for being correspondingly connected to each pin 500 of the MCU chip 910, each electrical connector 900 is electrically connected to the second end of the electrical connection wire set 600, and the IC control circuit 400 is electrically connected to the corresponding electrical connector 900; the sealing body 800 wraps the first substrate 100, the first plate surface of the second substrate 700 provided with the IC control circuit 400, and the circuit layer 300 connected with the electrical connection wire set 600 and each pin 500; wherein, the second end of each pin 500 is respectively led out from the first side surface of the sealing body 800; the electrical connection wire set 600 is bent and disposed between the first substrate 100 and the second substrate 700, and the second plate surface of the second substrate 700 is exposed from the sealing body 800.

The first substrate 100 may be used to support a high voltage driving circuit of the entire semiconductor circuit 10 and corresponding components. The first substrate 100 may be made of a metal material, such as a rectangular plate made of aluminum of 1100, 5052, etc., and the thickness of the rectangular plate is much thicker than other layers, generally 0.8mm to 2mm, and the common thickness is 1.5mm, so as to mainly achieve the heat conduction and heat dissipation effects on components such as power devices, etc. For another example, the first substrate 100 may be made of other metal materials with good thermal conductivity, for example, a rectangular plate made of copper. The shape of the first substrate 100 in the present application is not limited to a rectangular shape, and may be a circular shape, a trapezoidal shape, or the like. The first insulating layer 200 may be used to prevent the circuit layer 300 from conducting with the first substrate 100. The first insulating layer 200 is disposed on the surface of the first substrate 100, and has a thickness thinner than that of the first substrate 100, generally 50um to 150um, and usually 110 um. The circuit layer 300 is provided on the first insulating layer 200 to insulate the circuit layer 300 from the first substrate 100, and the circuit layer 300 is provided with internal circuits such as a power switching device and a high voltage driving circuit. The power switch device and the high-voltage driving circuit are electrically connected through a metal wire.

The second substrate 700 may be used to carry a low-voltage circuit and corresponding components of the semiconductor circuit 10, for example, a first board of the second substrate 700 may be used to carry the IC control circuit 400, and a second board of the second substrate 700 may be used to carry the MCU chip 910, where the first board is opposite to the second board, the first board is disposed close to the first substrate 100, and the second board is disposed far from the first substrate 100. The second substrate 700 may be made of a non-metal material, for example, the second substrate 700 may be a rectangular glass fiber board (i.e., a glass fiber board), and the size of the second substrate 700 is smaller than that of the first substrate 100, and the specific size may be determined according to the size of the IC control circuit 400 and the MCU layout. The shape of the second substrate 700 in the present application is not limited to a rectangular shape, and may be a circular shape, a trapezoidal shape, or the like. The IC control circuit 400 may be configured to receive a control command from the MCU chip 910 and transmit a control signal to a corresponding high voltage driving circuit on the first substrate 100 according to the control command; the IC control circuit 400 may also be used to feed back a response signal to the MCU chip 910. The IC control circuit 400 may include an IC control chip and corresponding peripheral capacitive resistors, and the IC control circuit 400 further includes metal wires electrically connecting the IC control chip and the corresponding peripheral capacitive resistors. A chip mounting area 710 is disposed on the second plate surface of the second substrate 700, and a plurality of electrical connectors 900 are disposed on the chip mounting area 710. Each electrical connector 900 may be used as a bonding site for the MCU chip 910, i.e., a bonding pad (pad) for bonding with the MCU chip 910. A via hole is further formed in the second substrate 700, and the electrical connector 900 on the second board surface can be connected to the IC control circuit 400 on the first board surface through the via hole, so that the MCU chip 910 is connected to the IC control circuit 400. The MCU (single chip microcomputer) chip is a micro control unit, also called a single chip microcomputer or a single chip microcomputer, is a chip-level computer and is controlled in different combinations for different application occasions. It is fast, and the program can be encrypted, but its processing power is limited, and it is suitable for the control field with high integration, size, power consumption and other limitations.

The first end of the electrical connection wire set 600 is used to electrically connect with the corresponding circuit element on the circuit layer 300, the second end of the electrical connection wire set 600 is used to electrically connect with the IC control circuit 400, the second end of the electrical connection wire set 600 is also used to electrically connect with each electrical connection member 900, each electrical connection member 900 is correspondingly connected with each pin 500 of the MCU chip 910 one by one, that is, the connection relationship between the MCU chip 910 and the IC control circuit 400 is established through the electrical connection wire set 600 and the electrical connection members 900, and the connection relationship between the MCU chip 910 and the IC control circuit 400 and the corresponding circuit element on the circuit layer 300 is established respectively. The electrical connection wiring set 600 may be a thin film wiring assembly; further, the electrical connection wiring set 600 is a bendable thin film circuit assembly, the IC control circuit 400 is disposed on the first board surface of the second substrate 700, the chip mounting area 710 is disposed on the second board surface of the second substrate 700, the chip mounting areas 710 disposed on the second board surface of the second substrate 700 are provided by disposing the electrical connection members 900 on the second board surface of the second substrate 700, the electrical connection wiring set 600 is bent between the first substrate 100 and the second substrate 700, and the MCU chip 910 is soldered between the chip mounting areas 710, such that the MCU chip 910 and the IC control circuit 400 and the circuit layer 300 are electrically connected.

The pins 500 may be used to transmit signals to corresponding internal circuits on the first substrate 100 and signals output by corresponding internal circuits on the circuit layer 300 to an external module; the pin 500 may also be used to transmit signals to the MCU chip 910 and the IC control circuit 400 on the second substrate 700, and transmit signals output by the MCU chip 910 and the IC control circuit 400 on the second substrate 700 to an external module. The plurality of pins 500 may be divided into a plurality of low voltage pins 500 and a plurality of high voltage pins 500 according to the voltage level of the transmission signal. The low voltage pins 500 refer to terminals of the pins 500 for transmitting low voltage logic control signals, and are used for connecting the MCU chip 910 and the IC control circuit 400 on the second substrate 700, and a plurality of low voltage pins 500 are soldered to pads on the second substrate 700 by soldering, such as solder paste soldering, so as to electrically connect the MCU chip 910 and the IC control circuit 400 on the second substrate 700. For example, the low voltage pin 500 may be electrically connected to the MCU chip 910 and the IC control circuit 400 on the second substrate 700 through a metal wire, wherein the metal wire may be a copper wire. The high voltage pin 500 refers to a terminal of the pin 500 for transmitting a high voltage power output signal for connecting the circuit layer 300 on the first substrate 100; the high voltage pins 500 are soldered to the pads of the circuit layer 300 on the first substrate 100 by soldering, such as solder paste soldering, so as to electrically connect with the circuit layer 300 on the first substrate 100. For example, the high voltage pin 500 may be electrically connected to the power switch device and the high voltage driving circuit on the circuit layer 300 through metal wires, respectively, where the metal wires may be copper wires.

The lead 500 can be made of C194(-1/2H) plates (chemical components: Cu (97.0), Fe (2.4), P (0.03) and Zn (0.12)) or KFC (-1/2H) plates (chemical components: Cu (99.6), Fe (0.1 (0.05-0.15) and P (0.025-0.04)), the C194 or KFC plates with the thickness of 0.5mm are processed by a stamping or etching process, and then the nickel plating thickness of 0.1-0.5um and the tin plating thickness of 2-5um are carried out on the surface; the excess webs of the pins 500400 are cut and shaped into the desired shape by a special device.

It should be noted that, after the pins 500 penetrate out of the first side surface of the sealing body 800, the pins 500 are bent by a bending process to obtain first bent ends, and then the tail ends of the first bent ends are bent to obtain second bent ends. Wherein the first bent end may be parallel to the first substrate 100.

The sealing body 800 may be used to plastically package the first board surface of the first substrate 100 electrically connected with the plurality of pins 500 and the electrical connection wire set 600 and the first board surface of the second substrate 700 provided with the IC control circuit 400, so that the first board surface of the first substrate 100, the first board surface of the second substrate 700 provided with the IC control circuit 400 and the circuit layer 300 connected with the electrical connection wire set 600 and each pin 500 are wrapped in the sealing body 800, thereby protecting the internal circuit and performing the functions of insulation and pressure resistance. In the manufacturing process of the sealing body 800, the first substrate 100 electrically connected with the plurality of pins 500 and the electrical connection wire set 600 may be plastically packaged in the sealing body 800 by a plastic packaging process using a plastic packaging mold. The material of the sealing body 800 may be thermosetting polymer, such as epoxy resin, phenolic resin, silica gel, amino group, unsaturated resin; in order to improve heat dissipation capability, the sealing body 800 may be a composite material containing powder or fiber of metal, ceramic, silicon oxide, graphene, or the like. In one example, the material used for the sealing body 800 may be a molding compound prepared by mixing an epoxy resin as a matrix resin, a high-performance phenolic resin as a curing agent, silica powder and the like as fillers, and various additives.

According to different design requirements, plastic package molds with different shapes can be designed, and then the sealing bodies 800 with different shapes and structures can be obtained through plastic package. For example, the sealing body 800 may be a rectangular parallelepiped structure. By using a thermoplastic resin injection molding method or a thermosetting resin transfer molding method, the first substrate 100, the first board surface of the second substrate 700 provided with the IC control circuit 400, and the circuit layer 300 connected with the electrical connection wire set 600 and the pins 500 are wrapped to play a role in protection, and the electrical connectors 900 on the second board surface of the second substrate 700 are exposed out of the sealing body 800, so that the corresponding pins 500 of the MCU chip 910 can be soldered to the corresponding electrical connectors 900, the MCU chip 910 is integrated in the chip mounting region 710 on the second board surface of the second substrate 700 of the sealing body 800, and the MCU chip 910 can be electrically connected to the IC control circuit 400 and the circuit layer 300, respectively.

Further, a plastic package mold for accommodating the chip mounting area 710 on the second plate surface of the second substrate 700 is obtained by design, and during the preparation process, the first end of each pin 500 is electrically connected to the circuit layer 300, the IC control circuit 400 and the corresponding electrical connector 900, the first end of the electrical connection wire set 600 is electrically connected to the circuit layer 300, and the second end of the electrical connection wire set 600 is connected to the IC control circuit 400 and the corresponding electrical connector 900; then, the electrical connection wiring set 600 is bent, so that the second substrate 700 is located right above the first substrate 100, the first board surface of the second substrate 700 is close to the first substrate 100, and through a plastic package process, the first substrate 100 electrically connected with the plurality of pins 500 and the electrical connection wiring set 600 and the second board surface of the second substrate 700 electrically connected with the IC control circuit 400 are plastic packaged in the sealing body 800 by a pre-designed plastic package mold, and meanwhile, each electrical connection member 900 on the second board surface of the second substrate 700 is exposed out of the sealing body 800, so that the MCU chip 910 can be welded with each electrical connection member 900, and the MCU chip 910 can be integrated outside the semiconductor circuit 10.

In the above-described embodiment, the MCU chip 910 is integrated outside (on the second side surface) the semiconductor circuit 10 by bending the electrical connection wire set 600 between the first substrate 100 and the second substrate 700 and exposing the second surface of the second substrate 700 from the sealing body 800, and the MCU chip 910 is mounted on the first surface of the second substrate 700 and the IC control circuit 400 that does not require high heat dissipation is mounted on the second surface of the second substrate 700, so that the MCU chip 910 and the IC control circuit are separated by only one thickness of the second substrate 700, thereby greatly shortening the transmission distance of signals. Thereby realizing the zero-distance transmission of control signals and reducing the area of the glass fiber board; meanwhile, strong current and weak current are separated in the same semiconductor circuit 10, so that the anti-interference capability of the whole semiconductor circuit 10 is improved, the electric control is miniaturized, the wiring is more flexible, the cost is low, and the product volume is further reduced; in addition, when the semiconductor circuit 10 fails, the MCU chip 910 integrated outside the module can be taken out alone, thereby improving the utilization of the components and facilitating the failure analysis; when the MCU chip 910 fails, the MCU chip 910 can be replaced to remove the failure, thereby reducing the maintenance cost and improving the product reliability.

In some embodiments of the present invention, as in fig. 3-5, IC control circuitry 400 includes a first circuit wiring level, and a first circuit element disposed on the first circuit wiring level; the first circuit wiring layer is provided on the first plate surface of the second substrate 700.

The first circuit wiring layer is made of metal such as copper and is insulated from the second substrate 700, the first circuit wiring layer includes circuit lines made of etched copper foil, and the thickness of the circuit layer is relatively thin, for example, about 70 um. In one example, the first circuit wiring layer further includes pads disposed near side positions of the second substrate 700, and the first circuit wiring layer may be formed using a 2 oz copper foil. And finally, a thin green oil layer can be coated on the first circuit wiring layer to play a role in circuit isolation and to separate the circuit lines from the electric connection between the circuit lines. The plurality of first circuit elements are arranged on the first circuit wiring layer, and the plurality of first circuit elements or the first circuit elements and the first circuit wiring layer can be electrically connected through metal wires; the first circuit element may be fixed to the first circuit wiring layer by soldering. In one example, the first circuit element may include an IC control chip, and a passive element such as a capacitor or a resistor.

In some embodiments of the present invention, as in fig. 4-5, IC control circuitry 400 includes compressor control circuitry 410 and/or fan control circuitry 420; the compressor control circuit 410 includes respective first circuit wiring and respective first circuit elements in a first circuit wiring layer; fan control circuitry 420 includes respective first circuit routes and respective first circuit elements in a first circuit routing layer.

Wherein the compressor may be, but is not limited to, an air conditioner compressor. The compressor control circuit 410 may be used to control the on/off of the compressor, and specifically, the compressor control circuit 410 may control the on/off of the compressor by controlling the on/off of the compressor inverter circuit 310 on the first substrate 100. The fan may be, but is not limited to, an air conditioning fan. The fan control circuit 420 may be configured to control on/off of the fan, and specifically, the fan control circuit 420 may control on/off of the fan by controlling on/off of the fan inverter circuit 320 on the first substrate 100.

Specifically, the compressor control circuit 410 and/or the fan control circuit 420 may be partitioned based on circuit implementation functionality for the first circuit elements and circuit wiring on the first circuit wiring level. That is, the corresponding first circuit elements and circuit wiring included in the compressor control circuit 410 are capable of performing the corresponding compressor control function; the corresponding first circuit elements and circuit wiring included in fan control circuit 420 may enable corresponding fan control functions.

In one example, the IC control circuit 400 includes a compressor control circuit 410, the IC control chip corresponding to the compressor control circuit 410 is mounted on the component mounting position corresponding to the first board surface of the second board 700 by brushing solder paste or dispensing silver paste, and the resistor and the capacitor corresponding to the compressor control circuit 410 are mounted on the component mounting position corresponding to the first board surface of the second board 700 by an SMT device; then, the whole semi-finished product is processed by a reflow oven to weld all components to corresponding mounting positions, and the welding quality of the components is detected by visual inspection of AOI equipment; foreign matters such as flux and aluminum chips remaining on the first plate surface of the second substrate 700 are removed by cleaning methods such as spraying and ultrasonic cleaning, and the compressor control circuit 410 is mounted.

In one example, the IC control circuit 400 includes a fan control circuit 420, where an IC control chip corresponding to the fan control circuit 420 is mounted on a component mounting position corresponding to a first board surface of the second substrate 700 by brushing solder paste or dispensing silver paste, and a resistor and a capacitor corresponding to the fan control circuit 420 are mounted on a component mounting position corresponding to the first board surface of the second substrate 700 by an SMT device; then, the whole semi-finished product is processed by a reflow oven to weld all components to corresponding mounting positions, and the welding quality of the components is detected by visual inspection of AOI equipment; by means of cleaning methods such as spraying and ultrasonic cleaning, foreign matters such as flux and aluminum chips remaining on the first plate surface of the second substrate 700 are removed, and the fan control circuit 420 is mounted.

It should be noted that in some embodiments, the IC control circuit 400 may further include both the compressor control circuit 410 and the fan control circuit 420.

In some embodiments of the present invention, as in fig. 3, the set of electrical connection lines 600 includes a wiring layer 620, a second insulating layer 610, and a thin film layer 630; the second insulating layer 610 is provided with a flat cable layer 620, the thin film layer 630 covers the flat cable layer 620, a first end of the flat cable layer 620 is connected to the circuit layer 300, and a second end of the flat cable layer 620 is respectively connected to the IC control circuit 400 and the corresponding electrical connector 900.

The flat cable layer 620 may include a plurality of metal wires arranged in rows, and the manufacturing process of the excluding layer may be: the metal sheet is processed by a stamping or etching process, so that the flat cable layer 620 having a plurality of metal wire patterns can be obtained. In one example, the bus bar layer 620 may be integrally formed with the second circuit wiring layer on the circuit layer 300, that is, the second circuit wiring layer and the bus bar layer 620 may be formed on the same copper foil layer. The second insulating layer 610 may be used to insulate each metal line on the bus line layer 620. The second insulating layer 610 is disposed on the surface of the row line layer 620, and has a thickness smaller than that of the row line layer 620, for example, the thickness of the second insulating layer 610 can be the same as that of the first insulating layer 200. The thin film layer 630 may be used to prevent accidental short circuit between metal lines on the wiring layer 620 due to external environmental pollution, prevent oxidation of metal lines on the wiring layer 620, and prevent surface damage of metal lines on the wiring layer 620, increase strength of the wiring layer 620 when bending and folding, enable the wiring layer 620 to bend a preset radian, enable the second substrate 700 connected to the second end of the wiring layer 620 to be located right above the first substrate 100, and enable the first board surface of the second substrate 700 to be close to the first substrate 100, and enable each electrical connector 900 on the second board surface of the second substrate 700 to expose the package body. Further, the thin film layer 630 is an insulating material, and may be a paste or liquid, and an insulating medium layer is formed on the surface of the flat cable layer 620 by spraying or coating, and then a thin film layer is formed by drying, and the thin film layer has certain toughness and can be bent and folded; or a film-shaped insulating material is coated on the surface of the flat cable layer 620 by a layer of adhesive and adhered by natural air drying or heating drying, thereby playing a series of protective effects on the flat cable layer 620.

Further, after the flat cable layer 620 is prepared, the second insulating layer 610 covers the first side of the flat cable layer 620, and the thin film layer 630 covers the second side of the flat cable layer 620, so that the metal wires on the flat cable layer 620 are insulated from each other, and the bending and folding strength of the flat cable layer 620 is enhanced. Then, the first end of the flat cable layer 620 is connected to the circuit layer 300, and the second end of the flat cable layer 620 is respectively connected to the IC control circuit 400 and the corresponding electrical connector 900; the flat cable layer 620 covered with the second insulating layer 610 and the thin film layer 630 is bent, so that the second substrate 700 is located right above the first substrate 100, the bent flat cable layer 620 is fixed through a corresponding carrier, and the flat cable layer is placed into a plastic package mold for packaging, so that each electrical connector 900 on the second plate surface of the second substrate 700 is exposed out of the package body, the MCU chip 910 is installed in the chip installation area 710, so that the MCU chip 910 can be integrated outside (second side surface) of the package body 800, and meanwhile, only one thickness of the second substrate 700 is separated between the MCU chip 910 and the IC control circuit, so that the transmission distance of signals is greatly shortened. Thereby achieving "zero distance" transmission of the control signal.

In some embodiments of the present invention, as shown in fig. 5, a capacitance-resistance element 430 is disposed near the second end of the electrical connection line set 600, and the capacitance-resistance element is electrically connected to the flat cable layer 620.

Wherein, the capacitance-resistance element 430 may include a resistor and/or a capacitor. By disposing the capacitance-resistance element 430 near the second end of the electrical connection wire set 600, the volume of the second substrate 700 can be further reduced without affecting the bending of the electrical connection wire set 600.

In some embodiments of the present invention, as in fig. 2-3, circuit layer 300 includes a second circuit wiring layer (not shown), and a second circuit element disposed on the second circuit wiring layer; the second circuit wiring layer is provided on the first insulating layer 200.

The second circuit wiring layer is made of metal such as copper and is insulated from the first substrate 100, the second circuit wiring layer includes circuit lines made of etched copper foil, and the thickness of the circuit layer is relatively thin, for example, about 70 um. In one example, the second circuit wiring layer further includes pads disposed near the side positions of the first substrate 100, and the second circuit wiring layer may be formed using 2 ounce copper foil. And finally, a thin green oil layer can be coated on the second circuit wiring layer to play a role in circuit isolation and to separate the circuit lines from the electric connection between the circuit lines. A plurality of second circuit elements are arranged on the second circuit wiring layer, and the plurality of second circuit elements or the second circuit elements and the second circuit wiring layer can be electrically connected through metal wires; the second circuit element may be fixed to the second circuit wiring layer by soldering.

In one example, the second circuit element may employ an active element such as a transistor or a diode, or a passive element such as a capacitor or a resistor. Further, elements having a large heat generation amount, such as power elements, may be fixed to the first substrate 100 by a heat sink made of copper or the like. The first insulating layer 200 is formed to cover at least one surface of the first substrate 100. And the resin material such as epoxy resin and the like forming the sealing layer can be filled with fillers such as alumina, silicon aluminum carbide and the like at high concentration to improve the heat conductivity, the fillers can be angular in order to improve the heat conductivity, and the fillers can be spherical in order to avoid the risk that the fillers damage the surface of the circuit element.

In some embodiments of the present invention, as in fig. 4, the circuit layer 300 further includes a compressor inverter circuit 310 and/or a fan inverter circuit 320, the compressor inverter circuit 310 including respective second circuit wiring and second circuit elements in a second circuit wiring layer; the fan inverter circuit 320 includes a corresponding second circuit wiring and a corresponding second circuit element in the second circuit wiring layer.

The compressor inverter circuit 310 may convert the dc power into ac power and supply the ac power to the compressor according to the control of the compressor control circuit 410. The fan inverter circuit 320 may convert the dc power into ac power and supply the ac power to the fan according to the control of the fan control circuit 420.

In one example, the circuit layer 300 includes a compressor inverter circuit 310, a device chip corresponding to the compressor inverter circuit 310 is mounted on a corresponding device mounting position of the circuit layer 300 by brushing solder paste or dispensing silver paste, and a resistor and a capacitor corresponding to the compressor inverter circuit 310 are mounted on a corresponding device mounting position of the circuit layer 300 by an automatic SMT (surface mount technology) device; then, the whole semi-finished product is processed by a reflow oven to weld all components to corresponding mounting positions, and the welding quality of the components is detected by visual inspection of AOI equipment; foreign matters such as flux and aluminum chips remaining on the first substrate 100 are removed by cleaning methods such as spraying and ultrasonic cleaning, and the compressor inverter circuit 310 and circuit wiring are connected by a bonding wire, so that the compressor inverter circuit 310 is mounted. It should be noted that, based on the circuit layer 300, the compressor inverter circuit 310 is included, and the corresponding IC control circuit 400 may include the compressor control circuit 410, so as to implement the two-in-one semiconductor circuit 10 integrating the compressor inverter circuit 310, the compressor control circuit 410 and the MCU chip 910.

In one example, the circuit layer 300 includes a fan inverter circuit 320, a device chip corresponding to the fan inverter circuit 320 is mounted on a corresponding device mounting position of the circuit layer 300 by brushing solder paste or dispensing silver paste, and a resistor and a capacitor corresponding to the fan inverter circuit 320 are mounted on a corresponding device mounting position of the circuit layer 300 by an automatic SMT (surface mount technology) device; then, the whole semi-finished product is processed by a reflow oven to weld all components to corresponding mounting positions, and the welding quality of the components is detected by visual inspection of AOI equipment; cleaning the first substrate 100 by spraying, ultrasonic cleaning, or the like to remove foreign matters such as flux and aluminum debris remaining thereon; the fan inverter circuit 320 and the circuit wiring are connected through the bonding wire, and the fan inverter circuit 320 is installed. It should be noted that, based on the circuit layer 300 including the fan inverter circuit 320, the corresponding IC control circuit 400 may include the fan control circuit 420, so as to implement the two-in-one semiconductor circuit 10 integrating the fan inverter circuit 320, the fan control circuit 420, and the MCU chip 910.

It should be noted that the circuit layer 300 may further include both the compressor inverter circuit 310 and the fan inverter circuit 320, and the corresponding IC control circuit 400 may include both the compressor control circuit 410 and the fan control circuit 420. Based on the above installation and preparation method for the compressor inverter circuit 310 and the fan inverter circuit 320, the compressor inverter circuit 310 and the fan inverter circuit 320 can be installed, and the three-in-one semiconductor circuit 10 integrating the compressor inverter circuit 310, the fan inverter circuit 320, the compressor control circuit 410, the fan control circuit 420 and the MCU chip 910 can be realized.

In some embodiments of the present invention, as in fig. 4, the circuit layer 300 further includes a PFC circuit 330 and/or a rectifier circuit 340; PFC circuit 330 includes a respective second circuit wiring and second circuit element in a second circuit wiring layer; the rectifying circuit 340 includes a corresponding second circuit wiring and a corresponding second circuit element in the second circuit wiring layer.

The PFC (Power Factor Correction) circuit may be used to improve the Power Factor of the device. It should be noted that the power factor refers to a relationship between the effective power and the total power consumption (apparent power), that is, a ratio of the effective power divided by the total power consumption (apparent power). The power factor can measure the effective utilization degree of the power, and when the power factor value is larger, the power utilization rate is higher. The rectifier circuit 340 may be used to convert ac power to dc power. The rectifying circuit 340 may be a bridge stack circuit, wherein the bridge stack circuit may include a rectifying device composed of two or four diodes.

Specifically, the second circuit elements and circuit wiring on the second circuit wiring layer may be divided into the PFC circuit 330 and/or the rectifier circuit 340 based on the circuit implementation function. Namely, the respective second circuit elements and circuit wiring included in the PFC circuit 330 can implement the respective PFC (power factor correction) functions; the respective second circuit elements and circuit wiring included in the rectifying circuit 340 can realize the respective rectifying functions.

In one example, the circuit layer 300 may further include a PFC circuit 330, where a device chip corresponding to the PFC circuit 330 is attached to a device mounting position corresponding to the circuit layer 300 by brushing solder paste or dispensing silver paste, and a resistor and a capacitor corresponding to the PFC circuit 330 are attached to a device mounting position corresponding to the circuit layer 300 by an automatic SMT (surface mount technology) device; then, the whole semi-finished product is processed by a reflow oven to weld all components to corresponding mounting positions, and the welding quality of the components is detected by visual inspection of AOI equipment; cleaning the first substrate 100 by spraying, ultrasonic cleaning, or the like to remove foreign matters such as flux and aluminum debris remaining thereon; the PFC circuit 330 and the circuit wiring are connected through a bonding wire, so that the installation of the PFC circuit 330 is realized, and the three-in-one semiconductor circuit 10 integrating the PFC circuit 330, the fan IPM (namely the fan control circuit 420 and the fan inverter circuit 320) and the MCU chip 910 is further realized; or a three-in-one semiconductor circuit 10 integrating the PFC circuit 330, the compressor IPM (i.e., the compressor control circuit 410 and the compressor inverter circuit 310) and the MCU chip 910; or a four-in-one semiconductor circuit 10 integrating the PFC circuit 330, the compressor IPM (i.e., the compressor control circuit 410 and the compressor inverter circuit 310), the fan IPM (i.e., the fan control circuit 420 and the fan inverter circuit 320), and the MCU chip 910.

In one example, the circuit layer 300 may further include a rectifying circuit 340, where a device chip corresponding to the rectifying circuit 340 is mounted on a corresponding device mounting position of the circuit layer 300 by brushing solder paste or dispensing silver paste, and a resistor and a capacitor corresponding to the rectifying circuit 340360 are mounted on a corresponding device mounting position of the circuit layer 300 by an automatic SMT (surface mount technology) device; then, the whole semi-finished product is processed by a reflow oven to weld all components to corresponding mounting positions, and the welding quality of the components is detected by visual inspection of AOI equipment; cleaning the first substrate 100 by spraying, ultrasonic cleaning, or the like to remove foreign matters such as flux and aluminum debris remaining thereon; the PFC circuit 330 is connected with the circuit wiring through a bonding wire, so that the rectification circuit 340 is installed, and the three-in-one semiconductor circuit 10 integrating the rectification circuit 340, the fan IPM (namely the fan control circuit 420 and the fan inverter circuit 320) and the MCU chip 910 is further realized; or a three-in-one semiconductor circuit 10 integrating the rectification circuit 340, the compressor IPM (i.e., the compressor control circuit 410 and the compressor inverter circuit 310) and the MCU chip 910; or a four-in-one semiconductor circuit 10 integrating the rectification circuit 340, the compressor IPM (i.e., the compressor control circuit 410 and the compressor inverter circuit 310), the fan IPM (i.e., the fan control circuit 420 and the fan inverter circuit 320), and the MCU chip 910.

It should be noted that the circuit layer 300 may further include a PFC circuit 330 and a rectifying circuit 340. Based on the installation and preparation method of the PFC circuit 330 and the installation and preparation method of the rectification circuit 340, the installation of the PFC circuit 330 and the rectification circuit 340 can be realized, and further, the four-in-one semiconductor circuit 10 integrating the compressor IPM (i.e., the compressor control circuit 410 and the compressor inverter circuit 310), the PFC circuit 330, the rectification circuit 340 and the MCU chip 910 is realized; or a four-in-one semiconductor circuit 10 integrating the fan IPM (i.e. the fan control circuit 420 and the fan inverter circuit 320), the PFC circuit 330, the rectification circuit 340 and the MCU chip 910; or a five-in-one semiconductor circuit 10 integrating the compressor IPM (i.e., the compressor control circuit 410 and the compressor inverter circuit 310), the fan IPM (i.e., the fan control circuit 420 and the fan inverter circuit 320), the PFC circuit 330, the rectification circuit 340 and the MCU chip 910.

In the above embodiment, based on the characteristics of the semiconductor circuit 10 of the present application, such as high integration, high flexibility of wiring, good heat dissipation, and small product size, the semiconductor circuit 10 with different functions can be realized by combining different circuit elements and corresponding circuit wirings.

In some embodiments of the present invention, as in fig. 8, there is also provided a method of manufacturing a semiconductor circuit according to the above-mentioned embodiments, the method including the steps of:

step S100, providing a first substrate and a second substrate;

step 200, preparing a first insulating layer on a first substrate;

step S300, preparing a circuit layer on the first insulating layer;

step S400, preparing an IC control circuit on a first board surface of a second substrate, wherein a chip mounting area for mounting an MCU chip is arranged on a second board surface of the second substrate, each electrical connecting piece is prepared in the chip mounting area, a through hole is arranged on the second substrate, and the IC control circuit penetrates through the through hole through a first metal wire to be connected with the corresponding electrical connecting piece;

step S500, arranging an electrical connection wire set and a plurality of pins on the circuit layer, wherein the first ends of the electrical connection wire set are electrically connected with the circuit layer, and the first ends of the plurality of pins are respectively connected with the circuit layer through second metal wires;

step S600, bending the electrical connection wire set, and respectively connecting the IC control circuit and each electrical connector at a second end of the electrical connection wire set so as to enable the second substrate to be positioned right above the first substrate;

step S700, performing injection molding on a first substrate provided with a circuit layer, a plurality of pins and an electrical connection wire group and a first panel of a second substrate provided with an IC control circuit through a packaging mold to form a sealing body, wherein second ends of the plurality of pins are respectively led out from a first side surface of the sealing body, and a second panel surface of the second substrate provided with a chip mounting area is exposed from a second side surface of the sealing body;

step S800, placing the MCU chip in the chip mounting area, and welding pins of the MCU chip and the electric connectors in a one-to-one correspondence manner to form a semiconductor circuit.

Specifically, the semiconductor circuit is prepared by the following specific steps: the first substrate and the second substrate are designed to be proper in size according to the required circuit layout, and for a common semiconductor circuit, the size of one substrate can be selected to be 64mm multiplied by 30 mm; putting the prepared first substrate into a special carrier (the carrier can be made of materials with high temperature resistance of more than 200 ℃ such as aluminum, synthetic stone, ceramics, PPS and the like), preparing a first insulating layer on the first substrate, then laminating a copper foil on the surface of the first insulating layer, etching the copper foil, and locally taking out the copper foil to form a second circuit wiring layer; mounting a power device chip on a component mounting position reserved in a circuit layer through automatic die bonding equipment (DA machine) by brushing solder paste or dispensing silver paste, mounting a resistance element and a capacitance element on the component mounting position through automatic SMT equipment, placing pins on corresponding mounting positions through a manipulator or manually, and fixing the pins through a carrier; then with whole semi-manufactured goods including the carrier on reflow oven welds all components and parts to corresponding installation position together, detect components and parts welding quality through visual inspection AOI equipment, through washing modes such as spraying, supersound, clear away and remain foreign matter such as scaling powder and aluminium bits on the aluminium base metal board, through binding line, form between circuit element and the circuit wiring and be connected, and then form the circuit layer on first base plate.

The second base plate can select the glass fiber board for use, and the size of the glass fiber board is smaller than that of the first base plate. Laminating a copper foil on the first plate surface of the second substrate, etching the copper foil, and locally taking out the copper foil to form a first circuit wiring layer; mounting an IC control chip on a component mounting position reserved in a first circuit wiring layer through automatic die bonding equipment (DA machine) by brushing solder paste or dispensing silver paste, mounting a resistance element and a capacitance element on the component mounting position through automatic SMT equipment, placing pins on corresponding mounting positions through a manipulator or manually, and fixing the pins through a carrier; then with whole semi-manufactured goods including the carrier on reflow oven welds all components and parts to corresponding installation position together, detect components and parts welding quality through visual inspection AOI equipment, through washing modes such as spraying, supersound, clear away the foreign matter such as scaling powder and the aluminium bits that remain on the second base plate, and then form IC control circuit on the first face of second base plate. In addition, a copper foil is pressed on the second plate surface of the second substrate, and then the copper foil is etched according to the pin arrangement rule of the MCU chip to form each electrical connector (namely, the MCU bonding pad). Preparing a through hole on the second substrate so as to electrically connect the corresponding electrical connecting piece on the second board surface with the IC control circuit on the first board surface; for example, the IC control circuit is connected with the corresponding electrical connector by the first metal wire passing through the through hole.

All the pins (such as the low-voltage pins and the high-voltage pins) are made of a metal base material such as a copper base material, for example, the pins are made into a strip shape with the length C of 25mm, the width K of 1.5mm and the thickness H of 1mm, for convenience of assembly, one end of each pin can be pressed and shaped into a certain radian, and then a nickel layer is formed on the surface of each pin by an electroless plating method: the nickel layer is formed on the surface of the copper material with a special shape by the mixed solution of nickel salt and sodium hypophosphite and adding a proper complexing agent, the metal nickel has strong passivation capability, a layer of extremely thin passivation film can be rapidly generated, and the corrosion of atmosphere, alkali and certain acid can be resisted. The nickel plating crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 mu m; then, by an acid sulfate process, the copper material with the formed shape and the nickel layer is soaked in a plating solution with positive tin ions for electrifying at room temperature, a nickel-tin alloy layer is formed on the surface of the nickel layer, the thickness of the nickel layer is generally controlled to be 5 mu m, and the protection and the weldability are greatly improved by the formation of the nickel layer. Thereby completing the pin preparation. And then, the first end of each pin is prepared on the circuit layer through reflow soldering, and solidification of tin paste or silver paste.

Then, processing the metal sheet by a stamping or etching process to obtain a plurality of metal wire patterns; sequentially covering the second insulating layer and the film layer on the surface of the metal wire pattern through processes of spraying or coating and the like, and then forming a film layer through drying, wherein the film layer has certain toughness and can be bent and folded; or coating a layer of adhesive on the surface of the metal wire pattern, and adhering the film-shaped insulating material by natural air drying or heating drying to play a series of protective effects on the metal wire pattern so as to form an electrical connection wire group; then connecting the first end of the electrical connection wire set to the circuit layer, and respectively connecting the second end of the electrical connection wire set to the IC control circuit and the corresponding electrical connection piece; the electric connection line group is bent by a preset radian, so that the second substrate can be positioned right above the first substrate, the first surface of the second substrate is close to the first substrate, and the second substrate is fixed through a special carrier, so that each electric connection piece on the second surface of the second substrate can expose the packaging body. Wherein, a metal substrate can be processed by stamping or etching process, and then MCU bonding pad with each electrical connector pattern can be obtained.

The method comprises the steps that a designed plastic package mold with a chip mounting area is adopted, in the preparation process, the plastic package mold with the chip mounting area is adopted, and a first substrate provided with a circuit layer, a plurality of pins and an electric connection wire group and a first panel of a second substrate provided with an IC control circuit are plastically packaged in the plastic package mold through a plastic package material; and finally, demolding, wherein after demolding, the plastic package material forms a sealing body, the first substrate provided with the circuit layer, the plurality of pins and the electrical connection wire group and the first panel provided with the second substrate of the IC control circuit are plastically packaged in the sealing body, and each electrical connection piece on the second panel of the second substrate is exposed out of the packaging body, namely, the specific position of the circuit wiring with a specific potential exposed out of the sealing body is connected with the MCU chip.

Finally, forming a semi-finished packaging product through the processes of marking, PMC post-curing, rib cutting and forming and the like; dispensing all the electric connecting pieces (namely pin bonding pads) on the second plate surface of the second substrate, and welding the MCU chip to the chip mounting area on the sealing body through high-temperature reflow; and carrying out electrical performance test on the product through an electrical parameter tester to further form the semiconductor circuit.

In the above embodiment, the electrical connection wire set is bent and disposed between the first substrate and the second substrate, and the second board surface of the second substrate is exposed from the sealing body, so as to integrate the MCU chip outside (on the second side surface) the semiconductor circuit. Thereby realizing the zero-distance transmission of control signals and reducing the area of the glass fiber board; meanwhile, strong current and weak current separation is realized in the same semiconductor circuit, so that the anti-interference capability of the whole semiconductor circuit is improved, the electric control is miniaturized, the wiring is more flexible, the cost is low, and the product volume is further reduced; in addition, when the semiconductor circuit breaks down, the MCU chip integrated outside the module can be taken out independently, so that the utilization rate of components is improved, and meanwhile, failure analysis is facilitated; when the MCU chip breaks down, the MCU chip can be replaced to remove the fault, so that the maintenance cost is reduced, and the product reliability is improved.

In some embodiments of the present invention, as shown in fig. 9, the step of preparing the set of electrically connecting wires comprises:

step S510, providing a metal sheet;

step S520, preparing a wiring layer on the metal sheet;

step S530, covering a second insulating layer on the first surface of the flat cable layer;

step 540, covering a thin film layer on a second surface, opposite to the first surface, of the second insulating layer; the first end of the wiring layer is connected to the circuit layer, and the second end of the wiring layer is connected with the IC control circuit and the corresponding electric connecting piece respectively.

Specifically, a metal sheet is processed through a stamping or etching process, and then a wiring layer with a plurality of metal wire patterns can be obtained; covering the first surface and the second surface of the flat cable layer with a second insulating layer and a thin film layer through processes such as spraying or coating in sequence, and then forming a thin film layer through drying, wherein the thin film layer has certain toughness and can be bent and folded; or the film-shaped insulating material is adhered by coating a layer of adhesive on the surface of the flat cable layer through natural air drying or heating drying, so that a series of protective effects are exerted on the flat cable layer, accidental short circuit caused by external environment pollution among all metal wires on the flat cable layer is prevented, oxidation of all metal wires on the flat cable layer is prevented, surface damage of all metal wires on the flat cable layer is prevented, and the strength of the flat cable layer is increased when the flat cable layer is bent and folded; then connecting the first end of the wiring layer to the circuit layer, and respectively connecting the second end of the wiring layer to the IC control circuit and the corresponding electrical connecting piece; the wiring layer provided with the second insulating layer and the thin film layer is bent by a preset radian, so that the second substrate connected with the second end of the wiring layer can be positioned right above the first substrate and is fixed through a special carrier, and each electric connecting piece on the second surface of the second substrate can be exposed out of the packaging body.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims

1. A semiconductor circuit, comprising:

the first substrate is provided with a first insulating layer;

a circuit layer disposed on the first insulating layer;

the first ends of the pins are respectively and electrically connected with the circuit layer;

the first surface of the second substrate is provided with an IC control circuit, and the IC control circuit is electrically connected with the second end of the electrical connection wire set; a chip mounting area for mounting an MCU chip is arranged on the second surface of the second substrate, a plurality of electrical connectors are arranged in the chip mounting area, each electrical connector is used for being connected with each pin of the MCU chip in a one-to-one correspondence manner, each electrical connector is electrically connected with the second end of the electrical connection line set, and the IC control circuit is electrically connected with the corresponding electrical connector;

the second end of each pin is led out from the first side face of the sealing body; the electrical connection wire group is arranged between the first substrate and the second substrate in a bent mode, and the second plate surface of the second substrate is exposed out of the sealing body.

2. The semiconductor circuit according to claim 1, wherein the IC control line includes a first circuit wiring layer, and a first circuit element arranged on the first circuit wiring layer; the first circuit wiring layer is arranged on the first plate surface of the second substrate.

3. The semiconductor circuit according to claim 2, wherein the IC control line includes a compressor control circuit and/or a fan control circuit; the compressor control circuit includes respective first circuit wiring lines and respective first circuit elements in the first circuit wiring layer; the fan control circuit includes a corresponding first circuit wire and a corresponding first circuit element in the first circuit wire level.

4. The semiconductor circuit according to any one of claims 1 to 3, wherein the set of electrical connection lines comprises a wiring layer, a second insulating layer, and a thin film layer; the second insulating layer is provided with the wiring layer, the thin film layer covers the wiring layer, the first end of the wiring layer is connected to the circuit layer, and the second end of the wiring layer is connected to the IC control circuit and the corresponding electric connecting piece respectively.

5. The semiconductor circuit of claim 4, wherein a capacitance element is disposed proximate the second end of the set of electrically connected wires, the capacitance element being electrically connected to the flex layer.

6. The semiconductor circuit according to claim 1, wherein the circuit layer includes a second circuit wiring layer, and a second circuit element arranged on the second circuit wiring layer; the second circuit wiring layer is provided on the first insulating layer.

7. The semiconductor circuit according to claim 6, wherein the circuit layer further includes a compressor inverter circuit and/or a fan inverter circuit, the compressor inverter circuit including respective second circuit wiring and second circuit elements in the second circuit wiring layer; the fan inverter circuit includes a corresponding second circuit wiring and a corresponding second circuit element in the second circuit wiring layer.

8. The semiconductor circuit according to claim 6 or 7, wherein the circuit layer further comprises a PFC circuit and/or a rectifier circuit; the PFC circuit includes a respective second circuit wiring and second circuit element in the second circuit wiring layer; the rectifier circuit includes a corresponding second circuit wiring and a corresponding second circuit element in the second circuit wiring layer.

9. A method for manufacturing a semiconductor circuit according to any one of claims 1 to 8, comprising the steps of:

providing a first substrate and a second substrate;

preparing a first insulating layer on the first substrate;

preparing a circuit layer on the first insulating layer;

preparing an IC control circuit on a first plate surface of the second substrate, wherein a chip mounting area for mounting an MCU chip is arranged on a second plate surface of the second substrate, each electrical connecting piece is prepared in the chip mounting area, a through hole is arranged on the second substrate, and the IC control circuit is connected with the corresponding electrical connecting piece by a first metal wire penetrating through the through hole;

the circuit layer is provided with an electrical connection wire set and a plurality of pins, the first ends of the electrical connection wire set are electrically connected with the circuit layer, and the first ends of the pins are respectively connected with the circuit layer through second metal wires;

bending the electrical connection wire set, and respectively connecting the IC control circuit and each electrical connection piece at a second end of the electrical connection wire set so as to enable the second substrate to be positioned right above the first substrate;

performing injection molding on the first substrate provided with the circuit layer, the plurality of pins, the first substrate provided with the electrical connection wire group and the first panel provided with the second substrate provided with the IC control circuit through a packaging mold to form a sealing body, wherein second ends of the plurality of pins are respectively led out from a first side surface of the sealing body, and a second panel surface of the second substrate provided with the chip mounting area is exposed from a second side surface of the sealing body;

and arranging the MCU chip in the chip mounting area, and welding the pins of the MCU chip and the electric connecting pieces in a one-to-one correspondence manner to form the semiconductor circuit.

10. A method for fabricating a semiconductor circuit according to claim 9, wherein the step of fabricating the set of electrically connecting lines comprises:

providing a metal sheet;

preparing a wiring layer on the metal sheet;

covering a second insulating layer on the first surface of the wiring layer;

covering a second surface, opposite to the first surface, of the second insulating layer with a thin film layer; and the first end of the wiring layer is connected to the circuit layer, and the second end of the wiring layer is respectively connected with the IC control circuit and the corresponding electric connecting piece.