CN216145611U - Semiconductor circuit having a plurality of transistors - Google Patents

Abstract

The utility model relates to a semiconductor circuit, which is characterized in that an insulating layer is arranged on a circuit substrate, and a circuit layer is arranged on the insulating layer; the first ends of the pins are respectively electrically connected with the circuit layer; the sealing body at least wraps one surface of the circuit substrate provided with the circuit layer; the circuit layer comprises a driving chip, a wireless communication component and an inversion component which are respectively connected with the driving chip; the driving chip is configured to detect working parameters of the circuit layer according to the received control signal transmitted by the wireless communication component to obtain detection data; the drive chip sends the detection data to the server through the wireless communication assembly, and the detection data is fed back to the server in real time, so that technical personnel can know the use condition of the product more quickly and accurately. This application is through integrateing the wireless communication subassembly on the circuit layer, wraps up into a high integrated semiconductor circuit through the encapsulation body to effectively solve the detection data real time transport monitoring problem that exists now.

Description

Semiconductor circuit having a plurality of transistors

Technical Field

The utility model relates to a semiconductor circuit, and belongs to the technical field of semiconductor circuit application.

Background

A semiconductor circuit is a power-driven type product that combines power electronics and integrated circuit technology. The semiconductor circuit integrates a power switching device and a high-voltage driving circuit, and incorporates a fault detection circuit for detecting an overvoltage, an overcurrent, an overheat, and the like. The semiconductor circuit receives the control signal of the MCU to drive the subsequent circuit to work on one hand, and sends the state detection signal of the system back to the MCU for processing on the other hand. Compared with the traditional discrete scheme, the semiconductor circuit gains a bigger and bigger market with the advantages of high integration degree, high reliability and the like, is particularly suitable for frequency converters of driving motors and various inverter power supplies, and is an ideal power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances. The semiconductor circuit is composed of a high-speed low-power-consumption tube core, an optimized gate-level driving circuit and a quick protection circuit. Even if a load accident or improper use occurs, the semiconductor circuit itself can be prevented from being damaged. In general, a semiconductor circuit uses an IGBT as a power switching element, and has an integrated structure in which a current sensor and a driving circuit are incorporated. In the face of market miniaturization and low cost competition, higher requirements are put forward on high integration and high heat dissipation technology of semiconductor circuits.

In the implementation process, the inventor finds that at least the following problems exist in the conventional technology: in the terminal application of the semiconductor circuit, the real-time performance data of the product of the semiconductor circuit is basically not monitored at present, and the performance level expression of the product in the actual use process cannot be known. From the aspect of product iterative development, when a product fails, technicians cannot acquire data conditions of the failed product, cannot accurately analyze a product failure mechanism, cannot provide better suggestions for improving the product, and the problem of information real-time transmission monitoring still exists in the conventional semiconductor circuit product.

SUMMERY OF THE UTILITY MODEL

Therefore, the monitoring data is necessary to be lacked aiming at the real-time performance monitoring data of the traditional semiconductor circuit, which is not beneficial to the analysis of the monitoring data. A semiconductor circuit is provided.

Specifically, the present invention discloses a semiconductor circuit comprising:

a circuit substrate on which an insulating layer is provided;

a circuit layer disposed on the insulating layer;

the first ends of the pins are respectively electrically connected with the circuit layer;

the sealing body at least wraps one surface of the circuit substrate provided with the circuit layer, and the second end of each pin is exposed out of the sealing body;

the circuit layer comprises a driving chip, a wireless communication component and an inversion component; the wireless communication component and the inversion component are respectively connected with a driving chip; the driving chip is configured to receive a control signal transmitted by the wireless communication component, and detect working parameters of the circuit layer according to the control signal to obtain detection data; the driver chip is further configured to transmit the detection data to the server through the wireless communication component.

Optionally, the semiconductor circuit further comprises an MCU chip connected to the driving chip; the MCU chip is used for transmitting the first PWM signal to the driving chip so that the driving chip drives the inversion component to be switched on and off according to the first PWM signal.

Optionally, the circuit layer further includes a PFC component connected to the driving chip; the driving chip is used for receiving the second PWM signal transmitted by the driving chip and driving the on-off of the PFC component according to the second PWM signal.

Optionally, the wireless communication component is a WIFI communication component.

Optionally, the WIFI communication component includes a WIFI chip and an antenna connected to the WIFI chip; the WIFI chip is connected with the driving chip and is located between the driving chip and the antenna.

Optionally, the semiconductor circuit further comprises a crystal oscillator circuit connected with the WIFI chip.

Optionally, the driving chip includes an inverter driving circuit and a working parameter detection circuit; the inversion driving circuit is used for receiving a first PWM signal transmitted by the wireless communication component and driving the inversion component to be switched on and off according to the first PWM signal; the working parameter detection circuit is used for detecting the working parameters of the circuit layer to obtain detection data and sending the detection data to the server through the wireless communication assembly.

Optionally, the inverter driving circuit comprises a high-voltage side driving circuit and a low-voltage side driving circuit; the inversion assembly comprises a high-voltage side bridge arm and a low-voltage side bridge arm; the first PWM signal comprises a high-voltage side PWM signal and a low-voltage side PWM signal;

the high-voltage side driving circuit is configured to drive the high-voltage side bridge arm to be switched on and off according to the received high-voltage side PWM signal; the low-voltage side driving circuit is configured to drive the low-voltage side bridge arm to be switched on and off according to the received low-voltage side PWM signal.

Optionally, the semiconductor circuit further comprises an auxiliary substrate; the MCU chip is arranged on the auxiliary substrate.

One of the above technical solutions has the following advantages and beneficial effects:

in each of the embodiments of the semiconductor circuit described above, the insulating layer is provided on the circuit substrate, and the circuit layer is provided on the insulating layer; the first ends of the pins are respectively electrically connected with the circuit layer; the sealing body at least wraps one surface of the circuit substrate provided with the circuit layer, and the second end of each pin is exposed out of the sealing body; the circuit layer comprises a driving chip, a wireless communication component and an inversion component; the wireless communication component and the inversion component are respectively connected with a driving chip; the driving chip is configured to receive a control signal transmitted by the wireless communication component, and detect working parameters of the circuit layer according to the control signal to obtain detection data; the driving chip sends the detection data to the server through the wireless communication assembly, and the detection data are fed back to the server in real time. This application is through with wireless communication subassembly integration on the circuit layer, wraps up into a high integrated semiconductor circuit through the encapsulation body to effectively solve the detection data real time transport monitoring problem that has now, provide convenient, reliable big data for everything networking. The detection data such as working temperature, voltage, current, faults and the like are transmitted to the server in real time, cloud storage is carried out through the server, technicians can know the service condition of the product quickly and accurately conveniently, and powerful data are provided for later-stage iterative development of the product.

Drawings

FIG. 1 is a schematic diagram of a conventional semiconductor circuit;

FIG. 2 is a schematic diagram of an internal structure of a semiconductor circuit according to an embodiment of the present invention;

FIG. 3 is a schematic diagram of an electrical transmission architecture for a semiconductor circuit in accordance with an embodiment of the present invention;

FIG. 4 is a SMT diagram of a semiconductor circuit according to an embodiment of the utility model.

Reference numerals:

the circuit board 100, the pin 200, the sealing body 300, the driving chip 400, the WIFI communication component 500, the WIFI chip 510, the antenna 520, the inverter component 600, the MCU chip 700, the PFC component 800, and the crystal oscillator circuit 900.

Detailed Description

In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It is to be noted that the embodiments and features of the embodiments may be combined with each other without conflict in structure or function. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.

Traditional semiconductor circuit, as shown in fig. 1, including circuit substrate and pin, the circuit layer on the pin connection circuit substrate does not have wireless communication subassembly on the circuit layer usually, leads to the unable real-time transmission of detection data to the server that traditional semiconductor circuit detected to the technical staff can't obtain semiconductor circuit's detection data condition in real time, can not accurate analysis product failure mechanism, just can not provide better suggestion improving the product, still has the information real-time transmission monitoring problem in the traditional semiconductor circuit product.

In one embodiment, as shown in fig. 2-4, the present invention provides a semiconductor circuit comprising a circuit substrate 100, a circuit layer, a plurality of pins 200, and a sealing body 300; an insulating layer is provided on the circuit board 100; the circuit layer is arranged on the insulating layer; the first ends of the pins 200 are respectively electrically connected with the circuit layer; the sealing body 300 at least wraps one surface of the circuit substrate 100 provided with the circuit layer, and the second end of each pin 200 is exposed from the sealing body 300; the circuit layer comprises a driving chip 400, a wireless communication component and an inversion component 600; the wireless communication component and the inversion component 600 are respectively connected with the driving chip 400; the driving chip 400 is configured to receive the control signal transmitted by the wireless communication component, and detect the working parameters of the circuit layer according to the control signal to obtain detection data; the driver chip 400 is further configured to transmit the detection data to the server through the wireless communication component.

The circuit substrate 100 can be used to carry a driving circuit of the entire semiconductor circuit and corresponding components. The circuit substrate 100 may be made of a metal material, such as a rectangular plate made of aluminum of 1100, 5052, etc., and the thickness of the rectangular plate is much thicker than other layers, generally 0.8mm to 2mm, and the common thickness is 1.5mm, so as to mainly achieve the heat conduction and heat dissipation effects on components such as power devices, etc. For another example, the circuit board 100 may be made of other metal materials with good thermal conductivity, for example, a rectangular plate made of copper. The shape of the circuit board 100 of the present invention is not limited to a rectangular shape, and may be a circular shape, a trapezoidal shape, or the like. The circuit substrate 100 is provided with an insulating layer for preventing the circuit layer from conducting with the circuit substrate 100. The insulating layer is disposed on the surface of the circuit substrate 100, and the thickness of the insulating layer is thinner than that of the circuit substrate 100, generally 50um to 150um, and usually 110 um. A circuit layer is provided on the insulating layer to insulate the circuit layer from the circuit board 100, and the circuit layer is provided with internal circuits such as a power switch device, a drive circuit, and a failure detection circuit. The power switch device, the high-voltage driving circuit and the fault detection circuit are electrically connected through metal wires.

The pins 200 may be used to transmit signals to corresponding internal circuits on the circuit substrate 100 and to transmit signals output by corresponding internal circuits on the circuit layer to an external module. The plurality of pins 200 may be divided into a plurality of low voltage side pins 200 and a plurality of high voltage side pins 200 according to the voltage strength of the transmission signal. The low voltage side pin 200 refers to a pin 200 terminal for transmitting a low voltage logic control signal, the plurality of low voltage side pins 200 are disposed at least one side edge of the circuit substrate 100, and the low voltage side pins 200 are electrically connected to a circuit layer on the circuit substrate 100; the low-voltage side pins 200 are soldered to pads of a circuit layer on the circuit substrate 100 by soldering such as solder paste soldering, thereby achieving electrical connection with the circuit layer on the circuit substrate 100. For example, the low-side pins 200 may be electrically connected to the fault detection circuit on the circuit layer through metal lines, such as copper lines. The high-voltage side pin 200 refers to a pin 200 terminal for transmitting a high-voltage power output signal, the plurality of high-voltage side pins 200 are disposed at least one side edge of the circuit substrate 100, and the high-voltage side pins 200 are electrically connected with a circuit layer on the circuit substrate 100; the plurality of high-voltage side pins 200 are soldered to pads of a circuit layer on the circuit substrate 100 by means of soldering such as solder paste soldering, thereby achieving electrical connection with the circuit layer on the circuit substrate 100. For example, the high-voltage side pin 200 may be electrically connected to the power switch device and the high-voltage driving circuit on the circuit layer through metal wires, respectively, where the metal wires may be copper wires.

The lead 200 can be made of C194(-1/2H) plates (chemical components: Cu (97.0), Fe (2.4), P (0.03) and Zn (0.12)) or KFC (-1/2H) plates (chemical components: Cu (99.6), Fe (0.1-0.05) and P (0.03, 0.025-0.04)), the C194 or KFC plates with the thickness of 0.5mm are processed by a stamping or etching process, nickel plating is firstly performed on the surface to the thickness of 0.1-0.5um, and tin plating is performed on the surface to the thickness of 2-5 um; the excess connecting ribs of the pin 200 are cut and shaped into a desired shape by a specific device.

It should be noted that, after the pins 200 penetrate out of the first side surface of the sealing body 300, the pins 200 are bent by a bending process to obtain first bent ends, and then the tail ends of the first bent ends are bent to obtain second bent ends. Wherein the first bending end may be parallel to the circuit substrate 100.

The circuit layer can comprise a circuit wiring layer and circuit elements arranged on the circuit wiring layer; the circuit wiring layer is provided on the insulating layer. The circuit wiring layer is made of metal such as copper and is insulated from the circuit board 100200, the circuit wiring layer includes a circuit line made of etched copper foil, and the thickness of the circuit layer is also thin, for example, about 70 um. In one example, the circuit wiring layer further includes pads disposed near the side edge of the circuit substrate 100, which may be formed using 2 ounce copper foil. And finally, a thin green oil layer can be coated on the circuit wiring layer to play a role in circuit isolation and to separate the circuit lines from the circuit lines. The circuit elements are arranged on the circuit wiring layer, and the circuit elements or the circuit elements and the circuit wiring layer can be electrically connected through metal wires; the circuit element may be fixed to the circuit wiring layer by soldering. In one example, the circuit elements include circuit elements corresponding to the inverter assembly 600 (e.g., IGBT and fast recovery diode) and circuit elements corresponding to the driver chip 400 (e.g., diode, transistor, resistor, capacitor, etc.).

In one example, the circuit element may employ an active element such as a transistor or a diode, or a passive element such as a capacitor or a resistor. Further, elements such as power elements having a large heat generation amount may be fixed to the circuit board 100 by a heat sink made of copper or the like. The insulating layer is formed to cover at least one surface of the circuit substrate 100. And the resin material such as epoxy resin and the like forming the sealing layer can be filled with fillers such as alumina, silicon aluminum carbide and the like at high concentration to improve the heat conductivity, the fillers can be angular in order to improve the heat conductivity, and the fillers can be spherical in order to avoid the risk that the fillers damage the surface of the circuit element.

The driving chip 400 may include corresponding circuit wiring and circuit elements in the circuit wiring layer. The driving chip 400 may be used to drive the inverter assembly 600 to operate, the driving chip 400 (i.e., the HVIC driving chip 400) is adhered to the circuit substrate 100 by silver paste or solder, the driving chip 400 may be connected to the circuit layer by using bonding wires of gold, copper, or aluminum, and the driving chip 400 may be connected to the inverter assembly 600 (e.g., a power MOS transistor or an IGBT) by using bonding wires of gold, copper, or aluminum. The driving chip 400 can also be used to detect the operating parameters of the circuit layer to obtain the detection data. The inverter assembly 600 includes corresponding circuit wiring and circuit elements in the circuit wiring layer; the inverter assembly 600 may be used to control the high-side load operation or the low-side load operation, and may also be used to control the high-side load operation and the low-side load operation, respectively. The inverter assembly 600 may be a full bridge arm inverter module, and the inverter assembly 600 may also be a half bridge arm inverter module. The inverting component 600 may be a three-phase inverting component 600; the inverter assembly 600 may be used to drive an external three-phase motor. The inverter assembly 600 may include a plurality of IGBTs, diodes (FRDs), and resistors-capacitors; the IGBTs, diodes (FRDs), and the resistors and capacitors may be adhered to the circuit substrate 100 by silver paste or solder, and may be connected to the corresponding pins 200 by bonding wires of gold, copper, or aluminum, respectively.

The wireless communication assembly includes respective circuit routes and circuit elements in the circuit route layer; a wireless communication component is a transducer of a signal used to transmit and receive wireless signals. The wireless communication component may receive the detection data (i.e., the real-time operating status signal) of the circuit layer transmitted by the driver chip 400, and transmit the received detection data to the server. The wireless communication component may be further configured to receive a control signal sent by the server, and transmit the control signal to the driver chip 400, so that the driver chip 400 detects an operating parameter of the circuit layer according to the control signal. For example, the driving chip 400 may detect the current operating temperature, the operating voltage, the operating current, and other detection data.

The sealing body 300 may be used to plastically package the circuit substrate 100 electrically connected with the plurality of pins 200 and the circuit layer, so that the circuit layer connected with each pin 200 is wrapped in the sealing body 300 to protect the internal circuit and to withstand voltage. In the preparation process of the sealing body 300, the circuit layer electrically connected with the plurality of pins 200 can be plastically packaged in the sealing body 300 by a plastic packaging process and a plastic packaging mold. The material of the sealing body 300 may be thermosetting polymer, such as epoxy resin, phenolic resin, silica gel, amino group, unsaturated resin; in order to improve heat dissipation capability, the sealing body 300 may be a composite material containing powder or fiber of metal, ceramic, silicon oxide, graphene, or the like. In one example, the material used for the sealing body 300 may be a molding compound prepared by mixing an epoxy resin as a matrix resin, a high-performance phenolic resin as a curing agent, silica powder and the like as fillers, and various additives.

According to different design requirements, plastic package molds with different shapes can be designed, and then the sealing bodies 300 with different shapes and structures can be obtained through plastic package. For example, the sealing body 300 may be a rectangular parallelepiped structure. The circuit layer to which the respective pins 200 are connected and in which the driving chip 400, the wireless communication module, and the inverter module 600 are disposed is wrapped by an injection molding method using a thermoplastic resin or a transfer molding method using a thermosetting resin to perform a protective function.

Further, a plastic package mold corresponding to the semiconductor circuit of the present application can be obtained by design, in the manufacturing process, the first ends of the pins 200 are electrically connected to the circuit layer, respectively, and a surface of the circuit substrate 100 electrically connected to the plurality of pins 200 is plastic-packaged in the sealing body 300 by a pre-designed plastic package mold through a plastic package process. It should be noted that, in some embodiments, the circuit substrate 100 electrically connected with the plurality of pins 200 may be completely encapsulated in the sealing body 300 by an encapsulation mold.

In the above embodiment, the circuit substrate 100 is provided with the insulating layer, and the circuit layer is disposed on the insulating layer; the first ends of the pins 200 are respectively electrically connected with the circuit layer; the sealing body 300 at least wraps one surface of the circuit substrate 100 provided with the circuit layer, and the second end of each pin 200 is exposed from the sealing body 300; the circuit layer comprises a driving chip 400, a wireless communication component and an inversion component 600; the wireless communication component and the inversion component 600 are respectively connected with the driving chip 400; the driving chip 400 is configured to receive the control signal transmitted by the wireless communication component, and detect the working parameters of the circuit layer according to the control signal to obtain detection data; the driving chip 400 sends the detection data to the server through the wireless communication component, so that the detection data is fed back to the server in real time. This application is through with wireless communication subassembly integration on the circuit layer, wraps up into a high integrated semiconductor circuit through the encapsulation body to effectively solve the detection data real time transport monitoring problem that has now, provide convenient, reliable big data for everything networking. The detection data such as working temperature, voltage, current, faults and the like are transmitted to the server in real time, cloud storage is carried out through the server, technicians can know the service condition of the product quickly and accurately conveniently, and powerful data are provided for later-stage iterative development of the product.

In one example, an insulating layer is formed covering at least one surface of the circuit substrate 100. And the resin material such as epoxy resin and the like forming the sealing layer can be filled with fillers such as alumina, silicon aluminum carbide and the like at high concentration to improve the heat conductivity, the fillers can be angular in order to improve the heat conductivity, and the fillers can be spherical in order to avoid the risk that the fillers damage the surface of the circuit element. The lead 200 is generally made of a metal such as copper, a nickel-tin alloy layer is formed on the surface of the copper by chemical plating and electroplating, the thickness of the alloy layer is generally 5 μm, and the copper can be protected from corrosion and oxidation by the plating layer and the solderability can be improved.

In some embodiments of the present invention, as shown in fig. 3, the semiconductor circuit further includes an MCU chip 700 connected to the driving chip 400; the MCU chip 700 is configured to transmit a first PWM signal to the driving chip 400, so that the driving chip 400 drives the inverter assembly 600 to turn on or off according to the first PWM signal.

The MCU (single chip microcomputer) chip is a micro control unit, also called a single chip microcomputer or a single chip microcomputer, is a chip-level computer and is controlled in different combinations for different application occasions. It is fast, and the program can be encrypted, but its processing power is limited, and it is suitable for the control field with high integration, size, power consumption and other limitations. MCU chip 700 can set up on auxiliary substrate, and auxiliary substrate's first face is provided with the MCU installing zone, and during the encapsulation, the MCU installing zone exposes from sealed body 300, and then is convenient for MCU chip 700 to install in the MCU installing zone, and is convenient for MCU chip 700 to dismantle from the MCU installing zone. The MCU chip 700 may send out a control signal (e.g., a first PWM signal) according to a predetermined program.

Specifically, based on MCU chip 700 connects driver chip 400, and then MCU chip 700 can transmit first PWM signal to driver chip 400, driver chip 400 can convert into drive frequency according to first PWM signal and drive inverter assembly 600, realize that inverter assembly 600 controls outside three-phase motor and work.

In some embodiments of the present invention, as shown in fig. 2 and 4, the circuit layer further includes a PFC component 800 connected to the driving chip 400; the driving chip 400 is configured to receive the second PWM signal transmitted by the driving chip 400, and drive the PFC component 800 to turn on or off according to the second PWM signal.

Among them, a PFC (Power Factor Correction) component can be used to improve the Power Factor of the device. It should be noted that the power factor refers to a relationship between the effective power and the total power consumption (apparent power), that is, a ratio of the effective power divided by the total power consumption (apparent power). The power factor can measure the effective utilization degree of the power, and when the power factor value is larger, the power utilization rate is higher. In one example, the PFC assembly 800 may include a first IGBT (Insulated Gate Bipolar Transistor), a fast recovery diode, and a schottky diode, wherein a Gate of the first IGBT is coupled to a set of PFC driving outputs of the PFC driving circuit, the fast recovery diode D2 is connected between a collector and an emitter of the first IGBT, and the schottky diode is connected between the collector and a power supply. Respectively pasting the corresponding device chip of the PFC assembly 800 to the corresponding device installation position of the circuit layer by brushing solder paste or dispensing silver paste, and respectively pasting the corresponding resistance element and the corresponding capacitance element of the PFC assembly 800 to the corresponding device installation position of the circuit layer by automatic SMT equipment; then, the whole semi-finished product is processed by a reflow oven to weld all components to corresponding mounting positions, and the welding quality of the components is detected by visual inspection of AOI equipment; by means of cleaning modes such as spraying and ultrasonic cleaning, foreign matters such as scaling powder and aluminum scraps remained on the circuit substrate 100 are removed, connection is formed between the PFC component 800 and circuit wiring through a bonding wire, installation of the PFC component 800 is achieved, and then the semiconductor circuit of the PFC component 800 is integrated.

Specifically, based on the PFC component 800 being connected to the driving chip 400, the MCU chip 700 may transmit a second PWM signal to the driving chip 400, and the driving chip 400 may convert the second PWM signal into a driving frequency to drive the PFC component 800, so as to implement the control current rectification and power factor correction functions of the PFC component 800.

In some embodiments of the present invention, as shown in fig. 3, the wireless communication component is a WIFI communication component 500.

The WIFI communication component 500 includes a WIFI chip 510 and an antenna 520 connected to the WIFI chip 510; the WIFI chip 510 is connected to the driving chip 400 and located between the driving chip 400 and the antenna 520.

The WIFI chip 510 may be configured to perform wireless transmission of signals; the antenna 520 refers to a radio frequency line. The WIFI chip 510 is disposed between the driving chip 400 and the antenna 520, and when a product is packaged, the tail end of the antenna 520 extends out to maintain signal transmission with the environment; the antenna 520 is arranged on the side edge of the current substrate, so that the inverter driving signal can be far away, and signal interference is avoided, and false triggering action is avoided; by embedding the antenna 520 inside the sealing body 300 and partially exposing from the sealing body 300, inconvenience in installation is avoided.

Specifically, connect between driver chip 400 and antenna 520 based on WIFI chip 510, and then antenna 520 can receive the control signal of external terminal transmission to give WIFI chip 510 control signal transmission, and then WIFI chip 510 gives driver chip 400 control signal transmission, makes driver chip 400 according to control signal, the working parameter on control detection circuitry layer, obtains detection data. Driver chip 400 can transmit the detection data who detects for WIFI chip 510, and then WIFI chip 510 accessible antenna 520 sends for the server, realizes making things convenient for technical staff to know the in service behavior of product faster, accurately to the cloud storage of detection data, provides powerful data to product later stage iteration development.

In some embodiments of the present invention, as in fig. 3, the semiconductor circuit further includes a crystal oscillator circuit 900 connected to the WIFI chip 510.

The crystal oscillator circuit 900 is used for generating and controlling frequencies of all communication systems, is an important element in a digital clock and a microprocessor, plays an important role in the WiFi technology, and the crystal oscillator needs to have high precision, high stability and anti-interference capability to ensure that the function of the WiFi component can be normally performed, and the crystal oscillator frequency can be 20MHZ or 40 MHZ.

Specifically, connect WIFI chip 510 based on crystal oscillator circuit 900, and then crystal oscillator circuit 900 can provide accurate hour hand frequency to WIFI chip 510, improves signal transmission's stability.

Further, the crystal oscillator circuit 900 may be disposed on the second surface of the auxiliary substrate, and during the encapsulation, the second surface of the auxiliary substrate is encapsulated on the sealing body 300, that is, the crystal oscillator circuit 900 is also encapsulated on the sealing body 300. By arranging the crystal oscillator circuit 900 on the auxiliary substrate, the high-voltage circuit element on the circuit substrate 100 based on the principle of the crystal oscillator circuit 900 is prevented from generating signal interference and influencing the accuracy of the hour hand.

In some embodiments of the present invention, the driving chip 400 includes an inverter driving circuit and an operating parameter detecting circuit; the inverter driving circuit is used for receiving a first PWM signal transmitted by the wireless communication component and driving the inverter component 600 to be switched on and off according to the first PWM signal; the working parameter detection circuit is used for detecting the working parameters of the circuit layer to obtain detection data and sending the detection data to the server through the wireless communication assembly.

The inverter driving circuit may be used to drive and control the inverter assembly 600 to be turned on or off; the working parameter detection circuit can be used for detecting working temperature, voltage, current, fault and other detection data on a circuit layer. The wireless communication component is connected with the circuit based on the working parameter detection circuit, the inversion driving circuit can receive the control signal transmitted by the wireless communication component, and the working parameter of the circuit layer is detected according to the control signal to obtain detection data; working parameter detection circuitry still can send the detected data to the server through the wireless communication subassembly, realizes in real time feeding back the detected data to the server, realizes in real time that operating temperature, voltage, electric current, trouble etc. detected data transmission to the server, carries out cloud storage through the server, makes things convenient for technical staff to know the in service behavior of product faster, accurately, provides powerful data to product later stage iteration development. Based on the wireless communication subassembly of contravariant drive circuit connection, MCU chip 700 can transmit first PWM signal to contravariant drive circuit, and contravariant drive circuit can be according to first PWM signal, converts drive frequency into and drives contravariant subassembly 600, realizes that contravariant subassembly 600 controls outside three-phase motor and works.

In one example, the operating parameter detection circuit includes a temperature detection subcircuit. The temperature detection sub-circuit may include a temperature sensing device (e.g., a thermistor), and the temperature sensing device may detect a current temperature of a location (i.e., an internal circuit of the chip) where the temperature sensing device is located, and may upload the detected current temperature data to the server through the wireless communication component. Therefore, the fan is driven to radiate the chip circuit according to the internal temperature of the chip circuit, the phenomenon that the chip circuit is burnt out due to overhigh internal temperature of the chip circuit is avoided, and the radiating and cooling effects of the chip circuit are improved while the chip driving function is realized.

Furthermore, the working parameter detection circuit further comprises an undervoltage protection circuit, an overcurrent protection circuit and an overtemperature protection circuit. The undervoltage protection circuit can be used for detecting the undervoltage condition of the power supply, and can timely disconnect the output power supply of the power supply when detecting that the power supply is in an undervoltage state, thereby playing the undervoltage protection role on the internal power supply of the chip. The overcurrent protection circuit can realize the overcurrent protection function of the internal circuit of the driving chip 400. The overcurrent protection circuit can monitor the working current of the driving chip 400 in real time, and can cut off the chip work in time when the working current is monitored to exceed the current early warning value, so that the phenomenon that the working current of the chip is too high and the chip is burnt out can be prevented, and the overcurrent protection effect of the internal circuit of the driving chip 400 is achieved. The over-temperature protection circuit can realize the over-temperature protection function of the internal circuit of the driving chip 400. The over-temperature protection circuit can timely cut off the work of the chip according to the current temperature detected by the temperature detection circuit and when the current temperature is monitored to exceed a temperature early warning value, so that the phenomenon that the working voltage of the chip is too high and the chip is burnt out can be prevented, and the over-temperature protection effect on an internal circuit (an inverter driving circuit) of the driving chip 400 is achieved.

In one example, the driving chip 400 further includes a PFC driving circuit, and the PFC driving circuit can be used to control on/off of the PFC component 800.

In some embodiments of the present invention, the inverter driving circuit includes a high-side driving circuit and a low-side driving circuit; the inverter assembly 600 includes a high-side bridge arm and a low-side bridge arm; the first PWM signal comprises a high-voltage side PWM signal and a low-voltage side PWM signal; the high-voltage side driving circuit is configured to drive the high-voltage side bridge arm to be switched on and off according to the received high-voltage side PWM signal; the low-voltage side driving circuit is configured to drive the low-voltage side bridge arm to be switched on and off according to the received low-voltage side PWM signal.

The inverter assembly 600 may include a high-voltage side bridge arm (i.e., an upper bridge arm module) and a low-voltage side bridge arm (i.e., a lower bridge arm module), and the inverter driving circuit includes a high-voltage side driving circuit and a low-voltage side driving circuit; the high-voltage side driving circuit can be used for driving and controlling the on-off of the high-voltage side bridge arm; the high side bridge arm (i.e., the upper bridge arm) may be used to control the high side load to operate. The high-voltage side bridge arm can be a full bridge arm, and the high-voltage side bridge arm can also be a half bridge arm. The low-voltage side driving circuit can be used for driving and controlling the on or off of the low-voltage side bridge arm; the low-voltage side bridge arm (i.e., the lower bridge arm) can be used to control the low-voltage side load to work. The low-voltage side bridge arm can be a full-bridge arm, and the low-voltage side bridge arm can also be a half-bridge arm.

Specifically, a high-voltage side PWM signal is input to the high-voltage side driving circuit, then the high-voltage side driving circuit receives the high-voltage side PWM signal transmitted by the wireless communication assembly, and drives the high-voltage side bridge arm according to the received high-voltage side PWM signal, so that the high-voltage side bridge arm drives and controls the high-voltage side load, and the driving function of the high-voltage side bridge arm of the chip is realized. The low-voltage side drive circuit receives the high-voltage side PWM signal transmitted by the wireless communication assembly through inputting the low-voltage side PWM signal to the low-voltage side drive circuit, and drives the low-voltage side bridge arm according to the received high-voltage side PWM signal, so that the low-voltage side bridge arm drives and controls the low-voltage side load, and the driving function of the low-voltage side bridge arm of the chip is realized.

Further, the high side bridge arm may include 3 IGBT and 3 freewheeling diode assemblies; the low side leg may include 3 IGBTs and 3 freewheeling diode assemblies.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the utility model and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the utility model.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (9)

1. A semiconductor circuit, comprising:

the circuit board is provided with an insulating layer;

a circuit layer disposed on the insulating layer;

the first ends of the pins are respectively and electrically connected with the circuit layer;

the sealing body at least wraps one surface of the circuit substrate provided with the circuit layer, and the second end of each pin is exposed out of the sealing body;

the circuit layer comprises a driving chip, a wireless communication component and an inversion component; the wireless communication component and the inversion component are respectively connected with the driving chip; the driving chip is configured to receive a control signal transmitted by the wireless communication component, and detect working parameters of the circuit layer according to the control signal to obtain detection data; the driving chip is further configured to transmit the detection data to a server through the wireless communication component.

2. The semiconductor circuit according to claim 1, further comprising an MCU chip connected to the driver chip; the MCU chip is used for transmitting a first PWM signal to the driving chip so that the driving chip drives the inversion component to be switched on and off according to the first PWM signal.

3. The semiconductor circuit according to claim 2, wherein the circuit layer further comprises a PFC component connected to the driving chip; the driving chip is used for receiving a second PWM signal transmitted by the driving chip and driving the on-off of the PFC component according to the second PWM signal.

4. The semiconductor circuit according to any one of claims 1 to 3, wherein the wireless communication component is a WIFI communication component.

5. The semiconductor circuit of claim 4, wherein the WIFI communication component comprises a WIFI chip and an antenna connected to the WIFI chip; the WIFI chip is connected with the driving chip and is located between the driving chip and the antenna.

6. The semiconductor circuit of claim 5, further comprising a crystal oscillator circuit connected to the WIFI chip.

7. The semiconductor circuit according to claim 4, wherein the driver chip includes an inverter driver circuit and an operating parameter detection circuit; the inverter driving circuit is used for receiving the first PWM signal transmitted by the wireless communication component and driving the inverter component to be switched on and off according to the first PWM signal; the working parameter detection circuit is used for detecting the working parameters of the circuit layer to obtain detection data and sending the detection data to the server through the wireless communication assembly.

8. The semiconductor circuit according to claim 7, wherein the inverter driver circuit includes a high-side driver circuit and a low-side driver circuit; the inversion assembly comprises a high-voltage side bridge arm and a low-voltage side bridge arm; the first PWM signal comprises a high-voltage side PWM signal and a low-voltage side PWM signal;

the high-voltage side driving circuit is configured to drive the high-voltage side bridge arm to be switched on and off according to the received high-voltage side PWM signal; the low-voltage side driving circuit is configured to drive the low-voltage side bridge arm to be switched on and off according to the received low-voltage side PWM signal.

9. The semiconductor circuit according to claim 2, further comprising an auxiliary substrate; the MCU chip is arranged on the auxiliary substrate.

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