CN116093042A - High-integration polygonal semiconductor circuit module, packaging structure and manufacturing method - Google Patents
High-integration polygonal semiconductor circuit module, packaging structure and manufacturing method Download PDFInfo
- Publication number
- CN116093042A CN116093042A CN202310228206.9A CN202310228206A CN116093042A CN 116093042 A CN116093042 A CN 116093042A CN 202310228206 A CN202310228206 A CN 202310228206A CN 116093042 A CN116093042 A CN 116093042A
- Authority
- CN
- China
- Prior art keywords
- semiconductor circuit
- copper foil
- polygonal semiconductor
- polygonal
- foil layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 117
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 70
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 68
- 239000011889 copper foil Substances 0.000 claims abstract description 65
- 239000003990 capacitor Substances 0.000 claims abstract description 10
- 238000009434 installation Methods 0.000 claims abstract description 6
- 239000000047 product Substances 0.000 claims description 21
- 239000011265 semifinished product Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000003466 welding Methods 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000003344 environmental pollutant Substances 0.000 claims description 4
- 238000010330 laser marking Methods 0.000 claims description 4
- 231100000719 pollutant Toxicity 0.000 claims description 4
- 238000011417 postcuring Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000011179 visual inspection Methods 0.000 claims description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 230000001680 brushing effect Effects 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000001721 transfer moulding Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 2
- 238000004132 cross linking Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 7
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 230000005611 electricity Effects 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 9
- 239000003921 oil Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000005057 refrigeration Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002969 artificial stone Substances 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a high-integration polygonal semiconductor circuit module, a packaging structure and a manufacturing method, wherein the high-integration polygonal semiconductor circuit module comprises the following components: a polygonal semiconductor circuit, a heat spreader disposed within the polygonal semiconductor circuit, and a package for packaging the polygonal semiconductor circuit; the polygonal semiconductor circuit comprises a plurality of metal plates, an insulating layer arranged on the metal plates, a copper foil layer arranged on the insulating layer, a green oil layer arranged on the copper foil layer, a chip resistor, a chip capacitor and a circuit layer for connecting adjacent copper foil layers; the chip is connected with the copper foil layer through a wire, and the radiator is attached to the mounting space formed by the plurality of metal plates. The high-integration polygonal semiconductor circuit module has good heat dissipation effect, can distinguish strong electricity from weak electricity, can improve the anti-interference capability of products, meets the high-integration electronic control miniaturization requirement and improves the installation efficiency.
Description
Technical Field
The invention relates to the technical field of intelligent power modules, in particular to a high-integration polygonal semiconductor circuit module.
Background
The semiconductor circuit, i.e. the modularized intelligent power system MIPS (Module Intelligent Power System), not only integrates the power switch device and the driving circuit, but also is internally provided with fault detection circuits such as overvoltage, overcurrent, overheat and the like, and can send detection signals to the CPU or the DSP for interrupt processing. The high-speed low-power-consumption integrated circuit consists of a high-speed low-power-consumption tube core, an optimized gate-level driving circuit and a rapid protection circuit. The MIPS itself is not damaged even if a load accident or misuse occurs. MIPS generally use IGBTs as power switching elements and incorporate an integrated structure of a current sensor and a driving circuit.
The IC driving control circuit, the MIPS sampling amplifying circuit, the inverter circuit composed of the PFC current protection circuit and other low-voltage control circuits and the high-voltage semiconductor circuit of the traditional MIPS modularized intelligent power system are distributed on the same board, meanwhile, the traditional MIPS modularized intelligent power system only integrates a single MIPS module, the integration of a plurality of MIPS modularized intelligent power systems is not realized yet, and the high integration and high heat dissipation technology of the MIPS modularized intelligent power system are put forward higher requirements in the face of market miniaturization and low cost competition.
However, the high-integration polygonal semiconductor circuit module is troublesome to integrate, has a poor refrigerating effect, is inconvenient to install, has a small application range, and has poor market competitiveness.
Disclosure of Invention
Aiming at the defects of the related technology, the invention provides a high-integration polygonal semiconductor circuit module which is convenient to integrate, good in refrigeration effect and convenient to install.
To solve the above technical problem, in a first aspect, an embodiment of the present invention provides a highly integrated polygonal semiconductor circuit module, including: a polygonal semiconductor circuit, a heat spreader disposed within the polygonal semiconductor circuit, and a package for packaging the polygonal semiconductor circuit;
the polygonal semiconductor circuit comprises a plurality of metal plates, an insulating layer arranged on the metal plates, a copper foil layer arranged on the insulating layer, a green oil layer arranged on the copper foil layer, a chip resistor, a chip capacitor and a circuit layer for connecting adjacent copper foil layers; the chip is connected with the copper foil layer through a wire, and the radiator is attached to the mounting space formed by the plurality of metal plates.
Preferably, the polygonal semiconductor circuit includes any one of a right angle shape, a triangle shape, a quadrangle shape, a pentagon shape, and a hexagon shape.
Preferably, the radiator comprises a main body, a plurality of cold water pipes arranged on the main body and a screw hole penetrating through the center of the main body; the main body is arranged in the installation space, and the plurality of cold water pipes are correspondingly installed in the green oil layer and fixed in the packaging body.
Preferably, the highly integrated polygonal semiconductor circuit module further includes a plurality of pins, one ends of the plurality of pins are electrically connected with the metal plate and the heat sink, respectively, and the other ends of the plurality of pins are connected with an external power source.
Preferably, the packaging body is formed by taking epoxy resin as matrix resin, taking high-performance phenolic resin as curing agent, adding silicon micropowder as filler and adding powdery molding compound mixed by a plurality of auxiliary agents, extruding the molding compound into a mold cavity by a heat transfer molding method, embedding the polygonal semiconductor circuit therein, and simultaneously crosslinking, curing and molding.
Preferably, the plurality of metal plates include a first metal plate, a second metal plate and a third metal plate, the copper foil layer includes a first copper foil layer, a second copper foil layer and a third copper foil layer, the first metal plate, the second metal plate and the third metal plate are respectively provided with the first copper foil layer, the second copper foil layer and the third copper foil layer, and the circuit layer is respectively electrically connected with the first copper foil layer, the second copper foil layer and the third copper foil layer.
In a second aspect, an embodiment of the present invention provides a package structure, where the package structure includes an electronic control board, a plurality of components disposed on the electronic control board, and the above-mentioned highly integrated polygonal semiconductor circuit module, where the highly integrated polygonal semiconductor circuit module is connected to the electronic control board through the plurality of pins.
Preferably, the radiator and the electric control plate are fixedly connected through screws penetrating through the screw holes.
In a third aspect, an embodiment of the present invention provides a method for manufacturing a highly integrated polygonal semiconductor circuit module, including the steps of:
s1, connecting the plurality of horizontally-placed metal plates through the circuit layer;
s2, placing the flat-placed finished products of the metal plates into a special carrier, and placing semiconductor inverter circuit chips of the polygonal semiconductor circuits on the component mounting positions reserved on the copper foil layers of the components on the surfaces of the metal plates through tin paste brushing or silver paste dispensing through automatic die bonding equipment;
s3, mounting the component semi-finished product, the chip resistor and the chip capacitor on the component mounting position through automatic chip SMT equipment;
s4, placing the lead frame on corresponding welding positions of the metal plates through a manipulator or manually, and then enabling the whole semi-finished product of the components to pass through a reflow oven together with a carrier to weld all the components on the corresponding mounting positions;
s5, detecting the welding quality of the components through visual inspection AOI equipment;
s6, cleaning the scaling powder and oxidized pollutants remained on the plurality of metal plates in a spraying and ultrasonic cleaning mode;
s7, enabling the chip and the copper foil layer to form electric connection through binding wires, and folding the polygonal semiconductor circuit clockwise along the triangular jig to form a structure identical to that of the triangular jig;
s8, fixing the polygonal semiconductor circuit semi-finished product mounted on the triangular jig and the jig into a packaging mold cavity;
s9, packaging the polygonal semiconductor circuit semi-finished product in a specific die through packaging equipment, and marking the product through laser marking;
s10, performing post-curing stress relief treatment on the product through a high-temperature oven;
s11, cutting off the connecting ribs and the dummy pins of the pins through rib cutting forming equipment and shaping the pins into the required shapes;
s12, performing electrical parameter test through test equipment, and finally embedding the triangular radiator into the middle of the polygonal semiconductor circuit to form a qualified finished product.
Compared with the related art, the polygonal semiconductor circuit and the radiator are packaged in the package body; the polygonal semiconductor circuit comprises a plurality of metal plates, an insulating layer arranged on the metal plates, a copper foil layer arranged on the insulating layer, a green oil layer arranged on the copper foil layer, a chip resistor, a chip capacitor and a circuit layer for connecting adjacent copper foil layers; the chip is connected with the copper foil layer through a wire, and the radiator is attached to the mounting space formed by the plurality of metal plates. The radiator is arranged in the metal plate, can realize a water cooling function, has better refrigeration effect, can well solve the heat dissipation problem caused by higher specification current and higher integration level, and has wider application. The high-integration electronic control miniaturization requirement can be met, each side of the polygon is provided with a functional circuit, the strong and weak electricity distinction is realized, and the anti-interference capability of the product can be improved. Meanwhile, a packaging structure is provided, wherein the packaging structure comprises an electric control board, a plurality of components arranged on the electric control board and the high-integration polygonal semiconductor circuit module, and the high-integration polygonal semiconductor circuit module is connected to the electric control board through a plurality of pins. Only one screw is required to be installed to fix the electric control plate, so that the installation efficiency is improved.
Drawings
The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
FIG. 1 is a schematic diagram of the overall structure of a highly integrated polygonal semiconductor circuit module according to the present invention;
FIG. 2 is a top view of a highly integrated polygonal semiconductor circuit module according to the present invention;
fig. 3 is a cross-sectional view of a highly integrated polygonal semiconductor circuit module according to the present invention;
FIG. 4 is a front view of a highly integrated polygonal semiconductor circuit module according to the present invention;
FIG. 5 is a front view of a high-integration polygonal semiconductor circuit module development process of the present invention;
FIG. 6 is a top view of an unfolding process of a highly integrated polygonal semiconductor circuit module according to the present invention;
FIG. 7 is a top view of a package structure of the present invention;
FIG. 8 is a front view of a package structure of the present invention;
FIG. 9 is a left side view of the package structure of the present invention;
fig. 10 is a flowchart of a method of fabricating a highly integrated polygonal semiconductor circuit module according to the present invention.
Detailed Description
The following describes in detail the embodiments of the present invention with reference to the drawings.
The detailed description/examples set forth herein are specific embodiments of the invention and are intended to be illustrative and exemplary of the concepts of the invention and are not to be construed as limiting the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to adopt other obvious solutions based on the disclosure of the claims and specification of the present application, including those adopting any obvious substitutions and modifications to the embodiments described herein, all within the scope of the present invention.
Example 1
As shown in fig. 1-9, the present invention provides a highly integrated polygonal semiconductor circuit module 100, comprising: a polygonal semiconductor circuit 7, a heat spreader 2 provided in the polygonal semiconductor circuit 7, and a package 1 for packaging the polygonal semiconductor circuit 7. The heat sink 2 is provided in the polygonal semiconductor circuit 7 to dissipate heat from the polygonal semiconductor circuit 7. After the heat spreader 2 is mounted in the polygonal semiconductor circuit 7, it is fixed together by the encapsulation 1 by injection.
The polygonal semiconductor circuit 7 includes a plurality of metal plates 001, an insulating layer 002 provided on the metal plates 001, a copper foil layer provided on the insulating layer 002, a green oil layer 004 provided on the copper foil layer, a chip 006 provided on the copper foil layer, a chip resistor 007, a chip capacitor 008, and a wiring layer 4 for connecting adjacent copper foil layers; the chip 006 is connected with the copper foil layer through a wire 005, and the heat radiator 2 is attached to the mounting space formed by the plurality of metal plates 001. The plurality of metal plates 001 serve as carriers for the entire inside of the polygonal semiconductor circuit 7 and play a role in heat dissipation of the entire semiconductor circuit. The insulating layer 002 is used to prevent the risk of internal circuit shorting and leakage caused by the electrical connection between the circuit wiring layer and the metal substrate. The circuit wiring layer is formed by etching the copper foil layer to form a desired circuit. The green oil layer 004 mainly protects the copper foil circuit layer, prevents physical disconnection of the conductor circuit, prevents short circuit caused by bridging in the welding process, reduces copper pollution to a welding groove, and prevents insulation deterioration and corrosion caused by external environmental factors such as dust, moisture and the like.
The wire 005 is generally used for binding metal wires (the metal wires are generally made of gold, aluminum, copper and the like), and the metal wires are used for realizing electrical connection between components in the circuit. The chip 006 is used for realizing the on-off control of the circuit, and plays a role of follow current. The chip 006 is a common control chip 006, and will not be described here. The chip resistor 007 is used for being connected to the gate of the IGBT chip 006 in the polygonal semiconductor circuit 7, and the effect of limiting the switching speed of the IGBT is achieved through current limiting. The patch capacitor 008 is used to filter, couple, and bootstrap the inside of the polygonal semiconductor circuit 7. The radiator 2 is installed in a built-in mode and then carries heat away through water circulation to realize water cooling heat dissipation.
Specifically, by encapsulating the polygonal semiconductor circuit 7, the heat spreader 2 is encapsulated in the package 1; the polygonal semiconductor circuit 7 includes a plurality of metal plates 001, an insulating layer 002 provided on the metal plates 001, a copper foil layer provided on the insulating layer 002, a green oil layer 004 provided on the copper foil layer, a chip 006 provided on the copper foil layer, a chip resistor 007, a chip capacitor 008, and a wiring layer 4 for connecting adjacent copper foil layers; the chip 006 is connected with the copper foil layer through a wire 005, and the heat radiator 2 is attached to the mounting space formed by the plurality of metal plates 001. The radiator 2 can realize the water-cooling function in the metal plate 001, and the refrigeration effect is better, and the solution that can be fine is higher specification electric current, and the heat dissipation problem that the integrated level is higher brings, and the application is wider. The high-integration electronic control miniaturization requirement can be met, each side of the polygon is provided with a functional circuit, the strong and weak electricity distinction is realized, and the anti-interference capability of the product can be improved.
In the present embodiment, the polygonal semiconductor circuit 7 includes any one of a right angle shape, a triangle shape, a quadrangle shape, a pentagon shape, and a hexagon shape. For example, the triangle semiconductor circuit structure design can meet the requirement of high-integration circuit; the triangular semiconductor circuit is characterized in that each side of the triangular body is provided with a functional circuit, so that strong and weak electricity can be distinguished, the anti-interference capability of a product can be improved, problems can be conveniently eliminated when the product is problematic, and failure analysis can be conveniently carried out.
In this embodiment, the heat sink 2 includes a main body, a plurality of cold water pipes 6 provided on the main body, and a screw hole 3 penetrating through a central position of the main body; the main body is disposed in the installation space, and the plurality of cold water pipes 6 are correspondingly installed on the green oil layer 004 and fixed in the package body 1. The water circulation inside the pipelines can be realized through the plurality of cold water pipes 6, so that the heat dissipation effect of the whole polygonal semiconductor circuit 7 is increased, the screw holes 3 are used for fixing the polygonal semiconductor circuit 7 on the electric control plate 8, and the degree of freedom limitation of the semiconductor circuit in the Z direction of the electric control plate 8 is realized.
In this embodiment, the highly integrated polygonal semiconductor circuit module 100 further includes a plurality of pins 5, one ends of the pins 5 are electrically connected to the metal plate 001 and the heat sink 2, respectively, and the other ends of the pins 5 are connected to an external power source. The pins 5 are used for realizing the electrical connection with the electric control board 8 and limiting the freedom of the polygonal semiconductor circuit 7 in the direction of the electric control board 8X, Y. The material adopts C194 (-1/2H) (chemical composition: cu (> 97.0) Fe:2.4P:0.03Zn: 0.12) or KFC (-1/2H) (chemical composition: cu (> 99.6) Fe:0.1 (0.05-0.15) P:0.03 (0.025-0.04)), and the 0.5mm copper plate is punched into a required shape through machining, and then the surface is plated with nickel with a thickness of 0.1-0.5um and then plated with tin with a thickness of 2-5 um.
In this embodiment, the package 1 is made of epoxy resin as matrix resin, high-performance phenolic resin as curing agent, silica powder as filler, and powdery molding compound mixed by adding various additives, and is extruded into a mold cavity by a heat transfer molding method to embed the polygonal semiconductor circuit 7 therein, and is cross-linked, cured and molded to form a device with a certain shape.
In this embodiment, the plurality of metal plates 001 includes a first metal plate 001, a second metal plate 001 and a third metal plate 001, the copper foil layers include a first copper foil layer, a second copper foil layer and a third copper foil layer, the first metal plate 001, the second metal plate 001 and the third metal plate 001 are respectively provided with the first copper foil layer, the second copper foil layer and the third copper foil layer, and the circuit layer 4 is respectively electrically connected with the first copper foil layer, the second copper foil layer and the third copper foil layer. The wiring layer 4 is used to connect the first metal plate 001, the second metal plate 001, and the third metal plate 001. The manufacturing process comprises the following steps: the thin film circuit layer 4 can be a flexible copper-clad plate process or a flat cable process similar to a mobile phone display screen connecting circuit board (the surface is provided with a layer of insulating thin film, a conductive medium is arranged in the middle of the insulating thin film, and the thin film circuit layer 4 can be used for connecting the thin film circuit layer 4 in a bending and folding way) and the substrate circuit layer 4.
Example two
As shown in fig. 1 to 9, an embodiment of the present invention provides a package structure, which includes an electronic control board 8, a plurality of components 9 disposed on the electronic control board 8, and the highly integrated polygonal semiconductor circuit module 100 according to the first embodiment, where the highly integrated polygonal semiconductor circuit module 100 is connected to the electronic control board 8 through the plurality of pins 5.
In this embodiment, the heat sink 2 and the electric control board 8 are fixedly connected through the screw hole 3 by a screw.
Specifically, the polygonal semiconductor circuit 7 is directly used as an insert to be mounted on the electric control board 8, then the polygonal semiconductor circuit is fixed at the position of the screw hole 3 through screws, and the pins 5 are welded to the electric control board 8 through wave soldering to realize electric connection. The prior art is that a bracket is firstly placed, and the bracket acts: the semiconductor circuit is used for supporting a semiconductor circuit and other power devices, and the semiconductor circuit is integrated with other power devices inside, so that the semiconductor circuit and other power devices are not required to be supported by a bracket, the semiconductor circuit and other power devices are fixed on the radiator 2 through screws, then the power devices with the radiator 2 are mounted on the electric control board 8 through the bracket, the electric control board 8 and the radiator 2 are fixed through the screws, and the electric connection is realized between the wave soldering real pins 5 and the electric control board 8. Thus, only one screw is required to be installed to realize the fixation with the electric control plate 8, and the installation efficiency is improved.
Example III
As shown in fig. 1 to 10, an embodiment of the present invention provides a method for manufacturing a highly integrated polygonal semiconductor circuit 7 module, including the steps of:
s1, connecting the plurality of flat metal plates 001 through the circuit layer 4;
s2, placing the flat-placed finished products of the plurality of metal plates 001 into a special carrier, and placing the semiconductor inverter circuit chip 006 of the polygonal semiconductor circuit 7 on the component mounting position through automatic die bonding equipment by brushing solder paste or dispensing silver paste on the component mounting position reserved on the copper foil layer of the components on the surfaces of the plurality of metal plates 001;
s3, mounting the semi-finished product of the component on the component mounting position through automatic SMT equipment, wherein the chip resistor 007 and the chip capacitor 008 are mounted on the component mounting position;
s4, placing the lead frame on corresponding welding positions of the plurality of metal plates 001 through a mechanical arm or manually, and then enabling the whole semi-finished product of the components to pass through a reflow oven together with a carrier to weld all the components on the corresponding mounting positions;
s5, detecting the welding quality of the components through visual inspection AOI equipment;
s6, cleaning the scaling powder and oxidized pollutants remained on the plurality of metal plates 001 by a spray and ultrasonic cleaning mode;
s7, enabling the chip 006 and the copper foil layer to form electric connection through binding wires, and folding the polygonal semiconductor circuit 7 clockwise along a triangular jig to form a structure identical to the triangular jig;
s8, fixing the semi-finished polygonal semiconductor circuit 7 mounted on the triangular jig and the jig into a packaging mold cavity;
s9, packaging the semi-finished polygonal semiconductor circuit 7 in a specific die through packaging equipment, and marking the product through laser marking;
s10, performing post-curing stress relief treatment on the product through a high-temperature oven;
s11, cutting off the connecting ribs of the pins 5 and the dummy pins 5 through rib cutting forming equipment and shaping the required shape;
s12, performing electrical parameter test through test equipment, and finally embedding the triangular radiator 2 into the middle of the polygonal semiconductor circuit 7 to form a qualified finished product.
Specifically, each metal plate 001 square which is connected through the thin film circuit layer 4 is firstly put into a special carrier (the carrier can be made of aluminum, synthetic stone, ceramics, PPS and other materials with high temperature resistance of more than 200 ℃), and the reserved component mounting positions of the copper foil circuit layers of the components on the surface of the metal plate 001 are used for placing the semiconductor inverter circuit chip 006 on the component mounting positions through automatic die bonding equipment (DA machine) through solder paste or silver paste dispensing.
The semi-finished products of the components are mounted on the component mounting positions through automatic SMT equipment, the lead frames are placed on the corresponding welding positions of the metal plates 001 through a mechanical arm or manually, and then the whole semi-finished products including the carriers are welded on the corresponding mounting positions through a reflow oven. And detecting the welding quality of components by visual inspection AOI equipment, and removing pollutants such as soldering flux and oxidation remained on the substrate by cleaning modes such as spraying, ultrasonic and the like. The circuit element and the circuit wiring are electrically connected by the bonding wire 005, and the semiconductor circuit is folded clockwise along the triangle jig (the triangle jig and the radiator 26 are the same in size, shape and specification) to form the same structure as the triangle jig. And then fixing the semi-finished product of the semiconductor circuit mounted on the triangular jig and the jig into a packaging mold cavity, or directly folding the semi-finished product of the semiconductor circuit clockwise along the triangular structure of the packaging mold cavity to form the triangular structure in the packaging mold cavity. And packaging the semi-finished product of the semiconductor circuit in a specific die by packaging equipment, and marking the product by laser marking. And (5) carrying out post-curing stress relief treatment on the product by a high-temperature oven. The connecting ribs of the pins 5 and the dummy pins 5 are cut off and shaped into required shapes through a rib cutting forming device, electric parameter tests are carried out through a testing device, and finally the triangular radiator 2 is built in the middle of the semiconductor circuit to form a final qualified polygonal semiconductor circuit 7. By the multi-circuit substrate manufacturing process, products of semiconductor circuits with higher integration of more lines can be realized. The product of the semiconductor circuit can be a double-substrate rectangular semiconductor circuit of an integrated inverter circuit and a driving circuit; the three-substrate triangle semiconductor circuit can be an integrated inverter circuit, a driving circuit and a PFC circuit; the four-substrate quadrilateral semiconductor circuit can be an integrated inverter circuit, a driving circuit, a PFC circuit and a rectifier bridge stack; the five-substrate pentagon double-motor driving semiconductor circuit can be integrated with a press inverter circuit, a press driving circuit, a fan inverter circuit, a fan driving circuit and a PFC circuit; the six-substrate hexagonal double-motor driving semiconductor circuit can be integrated with a press inverter circuit, a press driving circuit, a fan inverter circuit, a fan driving circuit, a PFC circuit and a rectifier bridge stack. The electronic control system can meet the requirements of different customers on semiconductor circuits with different integration levels, so that the electronic control design of the customers is more flexible, and the market adaptability of products is better.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any such modifications, equivalents, and improvements that fall within the spirit and principles of the present invention are intended to be covered by the following claims.
Claims (9)
1. A highly integrated polygonal semiconductor circuit module, comprising: a polygonal semiconductor circuit, a heat spreader disposed within the polygonal semiconductor circuit, and a package for packaging the polygonal semiconductor circuit;
the polygonal semiconductor circuit comprises a plurality of metal plates, an insulating layer arranged on the metal plates, a copper foil layer arranged on the insulating layer, a green oil layer arranged on the copper foil layer, a chip resistor, a chip capacitor and a circuit layer for connecting adjacent copper foil layers; the chip is connected with the copper foil layer through a wire, and the radiator is attached to the mounting space formed by the plurality of metal plates.
2. The highly integrated polygonal semiconductor circuit module of claim 1 wherein the polygonal semiconductor circuit comprises any one of a right angle, a triangle, a quadrilateral, a pentagon, and a hexagon.
3. The highly integrated polygonal semiconductor circuit module of claim 1 wherein the heat spreader comprises a body, a plurality of cold water pipes disposed on the body, and a screw hole extending through a central location of the body; the main body is arranged in the installation space, and the plurality of cold water pipes are correspondingly installed in the green oil layer and fixed in the packaging body.
4. The highly integrated polygonal semiconductor circuit module of claim 3 further comprising a plurality of pins having one end electrically connected to the metal plate and the heat sink, respectively, and another end connected to an external power source.
5. The highly integrated polygonal semiconductor circuit module according to claim 1, wherein the package is formed by molding a powder molding compound prepared by mixing epoxy resin as a matrix resin, high-performance phenolic resin as a curing agent, silica powder as a filler, and a plurality of additives by a heat transfer molding method, extruding the powder molding compound into a mold cavity, embedding the polygonal semiconductor circuit therein, and simultaneously crosslinking and curing.
6. The highly integrated polygonal semiconductor circuit module of claim 1, wherein the plurality of metal plates comprises a first metal plate, a second metal plate, and a third metal plate, the copper foil layers comprise a first copper foil layer, a second copper foil layer, and a third copper foil layer, the first copper foil layer, the second copper foil layer, and the third copper foil layer are disposed on the first metal plate, the second metal plate, and the third metal plate, respectively, and the circuit layer is electrically connected to the first copper foil layer, the second copper foil layer, and the third copper foil layer, respectively.
7. A package structure, characterized in that the package structure comprises an electric control board, a plurality of components arranged on the electric control board, and the highly integrated polygonal semiconductor circuit module according to any one of claims 1 to 6, wherein the highly integrated polygonal semiconductor circuit module is connected to the electric control board through the plurality of pins.
8. The package of claim 7, wherein the heat sink is fixedly coupled to the electronic control board by screws passing through the screw holes.
9. A method of manufacturing a highly integrated polygonal semiconductor circuit module according to any one of claims 1-6, comprising the steps of:
s1, connecting the plurality of horizontally-placed metal plates through the circuit layer;
s2, placing the flat-placed finished products of the metal plates into a special carrier, and placing semiconductor inverter circuit chips of the polygonal semiconductor circuits on the component mounting positions reserved on the copper foil layers of the components on the surfaces of the metal plates through tin paste brushing or silver paste dispensing through automatic die bonding equipment;
s3, mounting the component semi-finished product, the chip resistor and the chip capacitor on the component mounting position through automatic chip SMT equipment;
s4, placing the lead frame on corresponding welding positions of the metal plates through a manipulator or manually, and then enabling the whole semi-finished product of the components to pass through a reflow oven together with a carrier to weld all the components on the corresponding mounting positions;
s5, detecting the welding quality of the components through visual inspection AOI equipment;
s6, cleaning the scaling powder and oxidized pollutants remained on the plurality of metal plates in a spraying and ultrasonic cleaning mode;
s7, enabling the chip and the copper foil layer to form electric connection through binding wires, and folding the polygonal semiconductor circuit clockwise along the triangular jig to form a structure identical to that of the triangular jig;
s8, fixing the polygonal semiconductor circuit semi-finished product mounted on the triangular jig and the jig into a packaging mold cavity;
s9, packaging the polygonal semiconductor circuit semi-finished product in a specific die through packaging equipment, and marking the product through laser marking;
s10, performing post-curing stress relief treatment on the product through a high-temperature oven;
s11, cutting off the connecting ribs and the dummy pins of the pins through rib cutting forming equipment and shaping the pins into the required shapes;
s12, performing electrical parameter test through test equipment, and finally embedding the triangular radiator into the middle of the polygonal semiconductor circuit to form a qualified finished product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310228206.9A CN116093042A (en) | 2023-03-10 | 2023-03-10 | High-integration polygonal semiconductor circuit module, packaging structure and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310228206.9A CN116093042A (en) | 2023-03-10 | 2023-03-10 | High-integration polygonal semiconductor circuit module, packaging structure and manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116093042A true CN116093042A (en) | 2023-05-09 |
Family
ID=86187081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310228206.9A Pending CN116093042A (en) | 2023-03-10 | 2023-03-10 | High-integration polygonal semiconductor circuit module, packaging structure and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116093042A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116544202A (en) * | 2023-07-06 | 2023-08-04 | 广东汇芯半导体有限公司 | High-integration superconductive heat semiconductor circuit module and manufacturing method |
-
2023
- 2023-03-10 CN CN202310228206.9A patent/CN116093042A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116544202A (en) * | 2023-07-06 | 2023-08-04 | 广东汇芯半导体有限公司 | High-integration superconductive heat semiconductor circuit module and manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN116093042A (en) | High-integration polygonal semiconductor circuit module, packaging structure and manufacturing method | |
| CN116525552A (en) | High-integration semiconductor circuit module and manufacturing method | |
| CN111696936A (en) | Power module of integrated radiator and manufacturing method thereof | |
| CN116113221A (en) | Refrigerant heat dissipation semiconductor circuit device and manufacturing method | |
| CN113314515A (en) | Semiconductor circuit and method for manufacturing semiconductor circuit | |
| CN113823609A (en) | Semiconductor circuit, control board, and temperature control method for semiconductor circuit | |
| CN114666975A (en) | Semiconductor circuit structure and manufacturing method thereof | |
| CN216413057U (en) | Semiconductor circuit having a plurality of transistors | |
| CN114899161A (en) | Module and manufacturing method thereof | |
| CN116031230A (en) | Semiconductor lead frame packaging structure and manufacturing method thereof | |
| CN116741766B (en) | Manufacturing method of intelligent power module device | |
| CN116544202A (en) | High-integration superconductive heat semiconductor circuit module and manufacturing method | |
| CN113161338A (en) | Intelligent power module and preparation method thereof | |
| CN112968025A (en) | Intelligent power module and manufacturing method thereof | |
| CN116798972A (en) | Semiconductor refrigerating system and manufacturing method | |
| CN116779564A (en) | Semiconductor circuit cooling device and manufacturing method | |
| CN116798973A (en) | Automatic refrigerating and radiating system of semiconductor circuit and manufacturing method | |
| CN114698241A (en) | Semiconductor integrated circuit and manufacturing method thereof | |
| CN114666974A (en) | Semiconductor circuit and manufacturing method thereof | |
| CN113496965A (en) | Semiconductor circuit and method for manufacturing semiconductor circuit | |
| CN117040258A (en) | Intelligent power module | |
| CN114727484A (en) | Hexagonal semiconductor circuit and manufacturing method thereof | |
| CN116864497A (en) | Semiconductor circuit and manufacturing method thereof | |
| CN114664765A (en) | Semiconductor circuit board with good heat dissipation and manufacturing method thereof | |
| CN115734462A (en) | Semiconductor circuit and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |