CN114664765A - Semiconductor circuit board with good heat dissipation and manufacturing method thereof - Google Patents
Semiconductor circuit board with good heat dissipation and manufacturing method thereof Download PDFInfo
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- CN114664765A CN114664765A CN202210250678.XA CN202210250678A CN114664765A CN 114664765 A CN114664765 A CN 114664765A CN 202210250678 A CN202210250678 A CN 202210250678A CN 114664765 A CN114664765 A CN 114664765A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
- F04C29/00—Component parts, details or accessories of pumps or pumping installations, not provided for in groups F04C18/00 - F04C28/00
- F04C29/0042—Driving elements, brakes, couplings, transmissions specially adapted for pumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a semiconductor circuit board with good heat dissipation, which is arranged on the side wall surface of a compressor and comprises a metal substrate, an insulating layer and a chip; the upper surface of the metal substrate is covered with an insulating layer, and a chip is arranged on the upper surface of the insulating layer; the lower surface of the metal substrate is of a curved surface structure, the lower surface of the metal substrate is welded on the side wall surface of the compressor, and the lower surface of the metal substrate is attached to the side wall surface of the compressor. Also discloses a manufacturing method of the semiconductor circuit board with good heat dissipation. The semiconductor circuit board with good heat dissipation and the manufacturing method thereof solve the problems that the existing semiconductor circuit board needs to be provided with an additional radiator for heat dissipation, and is complex in structure and high in cost.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor circuit board with good heat dissipation and a manufacturing method thereof.
Background
The modular Intelligent Power system mips (modular Intelligent Power system) not only integrates a Power switch device and a driving circuit, but also incorporates a fault detection circuit for overvoltage, overcurrent, overheat and the like, and can send a detection signal to a CPU or a DSP for interrupt processing. The high-speed low-power-consumption chip-on-chip protection circuit is composed of a high-speed low-power-consumption chip, an optimized gate-level driving circuit and a quick protection circuit. Even if a load accident occurs or the use is improper, the MIPS can be prevented from being damaged. MIPS generally uses an IGBT as a power switching element, and has an integrated structure in which a current sensor and a driving circuit are incorporated. An inverter circuit composed of a low-voltage control circuit and a high-voltage semiconductor circuit, such as an IC drive control circuit, an MIPS sampling amplification circuit, a PFC current protection circuit and the like of the existing MIPS modular intelligent power system, is laid on the same board.
As shown in fig. 1, the bottom surface of a substrate 100 of a conventional modular smart power system for driving a refrigeration device is a planar structure, and the substrate 100 can only be mounted on a mounting plate of the planar structure, and the substrate 100 is mounted on the mounting plate of the refrigeration device by screws. In addition, because the modular intelligent power system generates heat during operation, a radiator needs to be arranged in the modular intelligent power system to dissipate heat, the structure is complex, and the cost is increased.
Disclosure of Invention
In view of the above drawbacks, an object of the present invention is to provide a semiconductor circuit board with good heat dissipation, which solves the problems of the conventional semiconductor circuit board that an additional heat sink needs to be provided for heat dissipation, the structure is complex, and the cost is high.
In view of the above drawbacks, another objective of the present invention is to provide a method for manufacturing a semiconductor circuit board with good heat dissipation, which solves the problems of complex structure and high cost of the conventional semiconductor circuit board, which needs to be provided with an additional heat sink for heat dissipation.
In order to achieve the purpose, the invention adopts the following technical scheme: a semiconductor circuit board with good heat dissipation is arranged on the side wall surface of a compressor and comprises a metal substrate, an insulating layer and a chip;
the upper surface of the metal substrate is covered with an insulating layer, and a chip is arranged on the upper surface of the insulating layer;
the lower surface of the metal base plate is of a curved surface structure, the lower surface of the metal base plate is welded on the side wall surface of the compressor, and the lower surface of the metal base plate is attached to the side wall surface of the compressor.
It is worth mentioning that the semiconductor circuit board further comprises a packaging body, the packaging body covers the upper surface of the metal substrate, the packaging body extends towards the direction far away from the upper surface of the metal substrate, and the insulating layer and the chip are located in the packaging body.
Optionally, the semiconductor circuit board further includes a copper foil layer, the copper foil layer is located in the package body, the copper foil layer covers the upper surface of the insulating layer, and the copper foil layer is electrically connected to the chip.
Specifically, the semiconductor circuit board further comprises a green oil layer, the green oil layer is located in the packaging body, and the green oil layer covers the upper surface of the copper foil layer.
Preferably, the semiconductor circuit board further comprises a chip resistor and a chip capacitor;
the chip resistor and the chip capacitor are both located in the packaging body, the chip resistor and the chip capacitor are both arranged on the upper surface of the insulating layer, the chip resistor is electrically connected with the chip, and the chip capacitor is electrically connected with the chip.
It is worth to say that, the semiconductor circuit board further includes a pin, one end of the pin is located in the package body and electrically connected with the copper foil layer, and the other end of the pin is arranged outside the package body.
Optionally, the semiconductor circuit board further includes a bonding metal line, the bonding metal line is located in the package, and the bonding metal line is electrically connected to the chip.
A manufacturing method for manufacturing the semiconductor circuit board with good heat dissipation comprises the following steps:
a1: processing the lower surface of the metal substrate into a curved surface structure;
a2: arranging an insulating layer on the upper surface of the metal substrate;
a3: arranging a copper foil layer on the upper surface of the insulating layer, and laminating the insulating layer and the copper foil layer to form a laminated semi-finished product;
a4: pressing the insulating layer in the pressed semi-finished product and the upper surface of the metal substrate to form a substrate semi-finished product;
a5: arranging a chip on the upper surface of the insulating layer;
a6: the surface of the pin is electrically connected with the copper foil layer after being plated with silver;
a7: one ends of the metal substrate, the insulating layer, the copper foil layer, the chip and the pins are sealed through epoxy resin to form a packaging body, and the other ends of the pins are arranged outside the packaging body.
One of the above technical solutions has the following beneficial effects:
1. the semiconductor circuit board is used for driving the compressor to work. The metal substrate is matched with a refrigerant tank or a refrigerant copper pipe of the compressor. The lower surface of the metal substrate is determined according to the structure of the side wall surface of the compressor, and compared with the existing heat dissipation device of the semiconductor circuit board which is a radiator, the lower surface of the metal substrate of the semiconductor circuit board with good heat dissipation is designed into a curved surface and is attached to the side wall surface of the compressor.
2. In the semiconductor circuit board with good heat dissipation, the metal substrate is 1mm to 5mm higher than that of the metal substrate in the existing semiconductor circuit, so that the metal substrate is conveniently welded on the side wall surface of the compressor; compared with the prior semiconductor circuit board which needs to be tightly contacted with the surface of a radiator through screwing down, the semiconductor circuit board with good heat dissipation is installed on a compressor through a welding mode, so that a screw hole does not need to be reserved, and the risk of edge collapse of the packaging body caused by screw installation is avoided.
3. The metal substrate is used as a carrier of the whole internal circuit of the semiconductor circuit board, and the lower surface of the metal substrate is attached to the side wall surface of the compressor, so that the whole semiconductor circuit board is cooled. The chip is used for realizing the control of the on and off of the semiconductor circuit board and playing a role of follow current. The insulating layer is used for preventing the occurrence of internal circuit short circuit and electric leakage risk caused by electrifying the circuit of the wiring area and the metal substrate.
Drawings
FIG. 1 is a schematic diagram of a conventional semiconductor circuit board;
FIG. 2 is a schematic structural diagram of a semiconductor circuit board of one embodiment of the present invention;
FIG. 3 is a cross-sectional view of a semiconductor circuit board of one embodiment of the present invention;
FIG. 4 is an enlarged schematic view of circle A of FIG. 3;
FIG. 5 is a schematic view of a semiconductor circuit board mounted to a compressor in accordance with one embodiment of the present invention;
FIG. 6 is a top view of a semiconductor circuit board mounted to a compressor in accordance with one embodiment of the present invention;
FIG. 7 is an enlarged schematic view of circle B of FIG. 6;
wherein: 1, a compressor; 2 a metal substrate; 3 an insulating layer; 4, a chip; 5, packaging body; 6 a copper foil layer; 7 a green oil layer; 8, a chip resistor; 9, a chip capacitor; 10 pins; 11 binding metal wires; 100 substrate.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.
In the description of the present invention, "a plurality" means two or more unless otherwise specified.
A semiconductor circuit board with good heat dissipation according to an embodiment of the present invention is described below with reference to fig. 2 to 7, and is disposed on a side wall surface of the compressor 1, and includes a metal substrate 2, an insulating layer 3, and a chip 4;
the upper surface of the metal substrate 2 is covered with an insulating layer 3, and a chip 4 is arranged on the upper surface of the insulating layer 3;
the lower surface of the metal substrate 2 is of a curved surface structure, the lower surface of the metal substrate 2 is welded on the side wall surface of the compressor 1, and the lower surface of the metal substrate 2 is attached to the side wall surface of the compressor 1. That is, the curvature of any one position of the lower surface of the metal substrate 2 is equal to the curvature of the position corresponding to the side wall surface of the compressor 1, and the curved surface structure of the lower surface of the metal substrate 2 is formed by wire cutting.
As shown in fig. 2, 5, 6 and 7, the semiconductor circuit board is used to drive the compressor to operate. The metal substrate 2 is matched with a refrigerant tank or a refrigerant copper pipe of the compressor 1. The lower surface of the metal substrate 2 is determined according to the structure of the side wall surface of the compressor 1, and compared with the existing heat dissipation device of the semiconductor circuit board which is a heat radiator, the lower surface of the metal substrate 2 of the semiconductor circuit board with good heat dissipation is designed into a curved surface and is attached to the side wall surface of the compressor 1, so that the heat dissipation device of the semiconductor circuit board with good heat dissipation utilizes the refrigeration function of the compressor 1 to dissipate heat, a heat radiator does not need to be added, the structure is simple, the cost is reduced, and the production efficiency is improved.
In the semiconductor circuit board with good heat dissipation, the metal substrate 2 is 1mm to 5mm higher than the metal substrate 2 in the existing semiconductor circuit, so that the metal substrate is conveniently welded to the side wall surface of the compressor 1; compared with the prior semiconductor circuit board which needs to be tightly contacted with the surface of a radiator through screw tightening, the semiconductor circuit board with good heat dissipation is installed on the compressor 1 through a welding mode, so that screw holes do not need to be reserved, and the risk of edge collapse of the packaging body 5 caused by screw installation is avoided.
The metal substrate 2 is used as a carrier of the whole internal circuit of the semiconductor circuit board, and the lower surface of the metal substrate 2 is attached to the side wall surface of the compressor 1, so that the whole semiconductor circuit board is cooled. The chip 4 is used for realizing the control of the on and off of the semiconductor circuit board and playing a role of follow current. The insulating layer 3 is used for preventing the occurrence of internal circuit short circuit and electric leakage risk caused by the electrification of the wires of the wiring area and the metal substrate 2.
In some embodiments, as shown in fig. 3 and 4, the semiconductor circuit board further includes a package body 5, the package body 5 covers the upper surface of the metal substrate 2, the package body 5 extends in a direction away from the upper surface of the metal substrate 2, and the insulating layer 3 and the chip 4 are located in the package body 5. The packaging body 5 is a powdery molding compound formed by mixing epoxy resin serving as matrix resin, high-performance phenolic resin serving as a curing agent, silicon micropowder and the like serving as fillers and a plurality of auxiliaries, and has an insulating effect. The metal substrate 2, the insulating layer 3, the copper foil layer 6, the chip 4, the chip resistor 8, the chip capacitor 9, the green oil layer 7, the bonding metal wire 11 and one end of the pin 10 are pressed into a die cavity by a heat transfer molding method, and simultaneously, cross-linking, curing and molding are carried out to form a device with a certain shape structure, so that elements in the packaging body 5 can be protected. The lead 10 is made of C194(-1/2H) (chemical components of Cu (97.0 percent and larger), Fe (2.4 percent), P (0.03 percent) and Zn (0.12 percent) or KFC (-1/2H) (chemical components of Cu (99.6 percent and larger), Fe (0.05-0.15 percent and P (0.025-0.04 percent)) through machining, a copper plate with the thickness of 0.5mm is punched to form a required shape, the nickel plating thickness of 0.1-0.5um is firstly carried out on the surface, and then the tin plating thickness is 2-5 um.
It should be noted that the semiconductor circuit board further includes a copper foil layer 6, the copper foil layer 6 is located in the package 5, the copper foil layer 6 covers the upper surface of the insulating layer 3, and the copper foil layer 6 is electrically connected to the chip 4. The circuit wiring layer is formed by etching the copper foil layer 6 to form a desired circuit wiring.
Optionally, the semiconductor circuit board further includes a green oil layer 7, the green oil layer 7 is located in the package body 5, and the green oil layer 7 covers the upper surface of the copper foil layer 6. The upper surface of copper foil layer 6 covers there is green oil reservoir 7, green oil reservoir 7 plays the guard action to copper foil layer 6, prevents the physics nature broken string of copper foil layer 6, can also prevent in welding process because of the short circuit that the bridging produced, reduces the copper pollution to the welding silo, can also prevent to cause insulating deterioration and corruption because of external environmental factors such as dust or moisture.
Specifically, the semiconductor circuit board further comprises a chip resistor 8 and a chip capacitor 9; chip resistor 8 and chip capacitor 9 all are located in packaging body 5, chip resistor 8 and chip capacitor 9 all set up in the upper surface of insulating layer 3, chip resistor 8 with chip 4 electricity is connected, chip capacitor 9 with chip 4 electricity is connected. The patch capacitor 9 plays a role in filtering, coupling and bootstrapping in the modular smart power system. The chip 4 comprises an IGBT chip, and the grid electrode of the IGBT chip is electrically connected with the chip resistor 8. The chip resistor 8 plays a role in current limiting, is electrically connected with the grid electrode of the IGBT chip in the semiconductor circuit board, and achieves the role of limiting the switching speed of the IGBT chip through current limiting.
Preferably, the semiconductor circuit board further includes a pin 10, one end of the pin 10 is located in the package body 5 and electrically connected to the copper foil layer 6, and the other end of the pin 10 is disposed outside the package body 5. One end of the pin 10 is disposed in the package body 5, and the position where one end of the pin 10 is electrically connected to the copper foil layer 6 can be protected, so that the one end of the pin 10 and the copper foil layer 6 are not easily short-circuited. The other end of the pin 10 is disposed outside the package 5, which facilitates electrical connection between the semiconductor circuit board and a peripheral circuit.
In some embodiments, the semiconductor circuit board further includes a bonding metal line 11, the bonding metal line 11 is located in the package 5, and the bonding metal line 11 is electrically connected to the chip 4. When some chip pins between two chips 4 cannot be directly and electrically connected through the copper foil layer 6, the chip pins are electrically connected through the bonding metal wires 11. When the semiconductor circuit board of the present embodiment is mounted, the semiconductor circuit board is first soldered to the electric control board by the wave soldering process, and then the semiconductor circuit board with the electric control board is soldered to the side wall surface of the compressor 1 by electric soldering.
A manufacturing method for manufacturing the semiconductor circuit board with good heat dissipation comprises the following steps:
a1: processing the lower surface of the metal substrate 2 into a curved surface structure;
a2: an insulating layer 3 is arranged on the upper surface of the metal substrate 2;
a3: arranging a copper foil layer 6 on the upper surface of the insulating layer 3, and laminating the insulating layer 3 and the copper foil layer 6 to form a laminated semi-finished product;
a4: pressing the insulating layer 3 in the pressed semi-finished product and the upper surface of the metal substrate 2 to form a substrate semi-finished product;
a5: disposing the chip 4 on the upper surface of the insulating layer 3;
a6: electrically connecting the pin 10 with the copper foil layer 6 after silver plating on the surface;
a7: one ends of the metal substrate 2, the insulating layer 3, the copper foil layer 6, the chip 4 and the pin 10 are sealed by epoxy resin to form a package body 5, and the other end of the pin 10 is arranged outside the package body 5.
In one embodiment, a curved-surface-structured metal substrate 2 is used as a carrier; an insulating layer 3 disposed between a metal substrate 2 and a copper foil layer 6; a copper foil layer 6 for forming a circuit wiring layer; pressing the insulating layer 3 and the copper foil layer 6 to form a pressed semi-finished product; laminating the insulating layer 3 of the laminated semi-finished product and the upper surface of the metal substrate 2 to form a substrate semi-finished product; forming a circuit wiring layer on the surface of the copper foil layer 6 of the substrate semi-laminate; forming a green oil layer 7 which plays a role of protection on the circuit wiring layer to form a finished substrate; a metal heat sink with silver plated on the surface; welding the chip 4 to the metal radiating fin to form a semi-finished product of the component; a pin 10 having a surface partially plated with silver and electrically connected to a circuit wiring layer, the pin 10 extending outward as an input/output; a circuit component disposed at a specific portion of the circuit wiring layer; a bonding wire 11 for circuit wiring and electrically connected to the circuit component; at least the electrical connection portion of the lead 10 and the circuit wiring layer is sealed by epoxy resin, and at least a portion of the lead 10 extending outward is exposed without being sealed by resin.
The manufacturing method of the semiconductor circuit board of the present embodiment is as follows:
the metal substrate 2 is used as a carrier;
locally anodizing at a specific position on the lower surface of the metal substrate 2;
arranging a copper foil layer 6 on the upper surface of the metal substrate 2;
forming a circuit wiring layer on the upper surface of the copper foil layer 6 of the metal substrate 2 by etching;
a green oil layer 7 for line protection is formed on the upper surface of the circuit wiring layer;
forming a plating treatment on the uncovered surface of the metal copper material with the specific shape of the green oil layer 7 and manufacturing a metal connector;
forming a plating layer on the surface of the metal copper material with a specific shape, and manufacturing a pin 10;
coating an adhesive material with certain fluidity at a specific position of the circuit wiring layer;
welding a chip 4 on the surface of the metal radiating fin;
placing a circuit element on the adhesive material;
curing the bonding material;
cleaning the metal substrate 2 by spraying or ultrasonic cleaning to remove the scaling powder, aluminum scraps and other pollutants remained on the metal substrate;
electrically connecting the circuit element and the circuit wiring layer by the bonding metal line 11;
sealing and fixing the metal substrate 2 and the pins 10 in a plastic packaging mode, so that a specific position of a circuit wiring layer with a specific potential is not filled with the resin;
testing electrical parameters and appearance parameters through testing equipment;
the semiconductor circuit board of the present embodiment was obtained after the test passed.
The manufacturing method of the semiconductor circuit board of another embodiment is as follows:
the method comprises the steps of firstly putting a metal radiating fin with a silver-plated surface into a special carrier, dispensing solder paste or silver adhesive at a specific position on the surface of the metal radiating fin, then attaching a PFC chip onto the metal radiating fin through soft solder die bonder equipment to form a semi-finished product of a component, and detecting the attaching quality of the PFC chip through visual inspection AOI equipment. Placing a metal substrate 2 with a curved surface structure into a special carrier (the carrier can be made of materials with high temperature resistance of more than 200 ℃ such as aluminum, synthetic stone, ceramics or PPS) and the like), pasting a semiconductor inverter circuit chip on a component mounting position reserved on a copper foil circuit layer through automatic die bonder (DA machine) by brushing tin paste or silver paste, pasting a semi-finished component on the component mounting position through automatic SMT equipment, pasting a chip resistor 8 and a chip capacitor 9 on the component mounting position, placing a lead frame on the corresponding welding position of the metal substrate 2 through a mechanical arm or manpower, then welding all components on the corresponding mounting position through a reflow oven by the whole semi-finished product including the carrier, detecting the welding quality of the components through visual inspection of AOI equipment, and removing scaling powder, oxidation pollutants and the like remained on the metal substrate 2 through cleaning modes such as spraying or ultrasonic waves and the like, the circuit element is electrically connected with the circuit wiring layer through the binding metal wire 11, the metal substrate 2, the insulating layer 3, the copper foil layer 6, the chip 4, the chip resistor 8, the chip capacitor 9, the green oil layer 7, the binding metal wire 11 and one end of the pin 10 are packaged in a specific die through packaging equipment, then the product is marked through laser marking, the product is subjected to post-curing stress-removing treatment through a high-temperature oven, the connecting ribs and the false pins 10 of the pin 10 are cut and shaped into a required shape through bar cutting forming equipment, and finally a final qualified product is formed after electrical parameter testing.
In the description herein, references to the description of the terms "embodiment," "example," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (8)
1. A semiconductor circuit board with good heat dissipation is characterized in that: the side wall surface is arranged on the compressor and comprises a metal substrate, an insulating layer and a chip;
the upper surface of the metal substrate is covered with an insulating layer, and a chip is arranged on the upper surface of the insulating layer;
the lower surface of the metal base plate is of a curved surface structure, the lower surface of the metal base plate is welded on the side wall surface of the compressor, and the lower surface of the metal base plate is attached to the side wall surface of the compressor.
2. The semiconductor circuit board with good heat dissipation of claim 1, wherein: the semiconductor circuit board further comprises a packaging body, the packaging body covers the upper surface of the metal substrate, the packaging body extends towards the direction far away from the upper surface of the metal substrate, and the insulating layer and the chip are located in the packaging body.
3. The semiconductor circuit board with good heat dissipation of claim 2, wherein: the semiconductor circuit board further comprises a copper foil layer, the copper foil layer is located in the packaging body, the copper foil layer covers the upper surface of the insulating layer, and the copper foil layer is electrically connected with the chip.
4. The semiconductor circuit board with good heat dissipation of claim 2, wherein: the semiconductor circuit board further comprises a green oil layer, the green oil layer is located in the packaging body, and the green oil layer covers the upper surface of the copper foil layer.
5. The semiconductor circuit board with good heat dissipation of claim 2, wherein: the semiconductor circuit board further comprises a chip resistor and a chip capacitor;
the chip resistor and the chip capacitor are both located in the packaging body, the chip resistor and the chip capacitor are both arranged on the upper surface of the insulating layer, the chip resistor is electrically connected with the chip, and the chip capacitor is electrically connected with the chip.
6. The semiconductor circuit board with good heat dissipation of claim 3, wherein: the semiconductor circuit board further comprises a pin, one end of the pin is located in the packaging body and electrically connected with the copper foil layer, and the other end of the pin is arranged outside the packaging body.
7. The semiconductor circuit board with good heat dissipation of claim 3, wherein: the semiconductor circuit board further comprises a bonding metal wire, wherein the bonding metal wire is positioned in the packaging body and is electrically connected with the chip.
8. A method of manufacture, characterized by: manufacturing a semiconductor circuit board with good heat dissipation according to any one of claims 1 to 7, comprising the steps of:
a1: processing the lower surface of the metal substrate into a curved surface structure;
a2: arranging an insulating layer on the upper surface of the metal substrate;
a3: arranging a copper foil layer on the upper surface of the insulating layer, and laminating the insulating layer and the copper foil layer to form a laminated semi-finished product;
a4: pressing the insulating layer in the pressed semi-finished product and the upper surface of the metal substrate to form a substrate semi-finished product;
a5: arranging a chip on the upper surface of the insulating layer;
a6: the surface of the pin is electrically connected with the copper foil layer after being plated with silver;
a7: and sealing one ends of the metal substrate, the insulating layer, the copper foil layer, the chip and the pins by epoxy resin to form a packaging body, wherein the other ends of the pins are arranged outside the packaging body.
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| CN202210250678.XA CN114664765A (en) | 2022-03-15 | 2022-03-15 | Semiconductor circuit board with good heat dissipation and manufacturing method thereof |
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| CN202210250678.XA CN114664765A (en) | 2022-03-15 | 2022-03-15 | Semiconductor circuit board with good heat dissipation and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115734462A (en) * | 2022-11-21 | 2023-03-03 | 广东汇芯半导体有限公司 | Semiconductor circuit and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115734462A (en) * | 2022-11-21 | 2023-03-03 | 广东汇芯半导体有限公司 | Semiconductor circuit and manufacturing method thereof |
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