CN115734462A - Semiconductor circuit and manufacturing method thereof - Google Patents

Abstract

The invention provides a semiconductor circuit and a manufacturing method thereof, and the semiconductor circuit comprises a metal substrate, a plurality of circuit components, a binding metal wire, a metal pin and a packaging body, wherein the metal substrate comprises a metal base material, a pipe groove arranged on the back surface of the metal base material, a pipeline which is embedded in the pipe groove and has a heat dissipation function, and a circuit wiring layer which is pressed on one surface of the metal base material far away from the pipe groove; the circuit components are arranged at specific positions of the circuit wiring layer; the binding metal wire is used for realizing the electric connection among the circuit components; the metal pins are connected with the circuit wiring layer and extend out of the metal substrate; the packaging body is coated on the front side surface of the metal substrate in a half mode or completely coated on the whole metal substrate, so that the connection part of the metal pin and the circuit wiring layer is sealed at least. The semiconductor circuit of the invention increases the heat capacity, and has high installation efficiency, simple structure and strong practicability.

Description

Semiconductor circuit and manufacturing method thereof

Technical Field

The invention relates to the technical field of circuit board processing, in particular to a semiconductor circuit and a manufacturing method thereof.

Background

The semiconductor circuit, namely the Modular Intelligent Power System (MIPS), not only integrates a Power switch device and a driving circuit, but also embeds fault detection circuits such as overvoltage, overcurrent and overheat, and can send detection signals to a CPU or a DSP for interrupt processing. The high-speed low-power-consumption chip-on-chip protection circuit is composed of a high-speed low-power-consumption chip, an optimized gate-level driving circuit and a quick protection circuit. Even if a load accident occurs or the use is improper, the MIPS can be prevented from being damaged. MIPS generally uses an IGBT as a power switching element, and has an integrated structure in which a current sensor and a driving circuit are incorporated.

However, inverter circuits formed by low-voltage control circuits such as an IC drive control circuit, an MIPS sampling amplification circuit, a PFC current protection circuit and the like of the existing MIPS modular intelligent power system and a high-voltage semiconductor circuit are arranged on the same board, and meanwhile, the existing MIPS modular intelligent power system only integrates a single MIPS module, integration of a plurality of MIPS modular intelligent power systems is not achieved, and higher requirements are provided for high integration and high heat dissipation technologies of the MIPS modular intelligent power system in the face of market miniaturization and low cost competition.

Disclosure of Invention

In view of the above deficiencies of the related art, the present invention provides a semiconductor circuit and a method for manufacturing the same to solve the above problems.

In order to solve the above technical problem, in a first aspect, an embodiment of the present invention provides a semiconductor circuit, including:

the metal substrate comprises a metal base material, a pipe groove arranged on the back surface of the metal base material, a pipeline which is embedded in the pipe groove and has a heat dissipation function, and a circuit wiring layer which is pressed on one surface of the metal base material far away from the pipe groove;

a plurality of circuit components arranged at specific positions of the circuit wiring layer;

a bonding wire for electrically connecting the plurality of circuit components;

a metal pin connected with the circuit wiring layer and extending out of the metal substrate;

and the packaging body is coated on the front side surface of the metal substrate in a half way or completely coated on the whole metal substrate so as to seal at least the connecting part of the metal pin and the circuit wiring layer.

Preferably, the circuit wiring layer includes an insulating layer and a copper foil layer stacked on the metal substrate, the copper foil layer is etched to form a wiring layer, and a protective layer stacked on the wiring layer, and the metal pin is connected with the wiring layer and extends out of the metal substrate.

Preferably, the plurality of circuit components comprise chip resistors, chip capacitors, components and component semi-finished products which are welded on the wiring layer; the semi-finished component comprises a radiating fin welded on the wiring layer and a high-voltage power device attached to the surface of the radiating fin.

Preferably, the surface of the heat sink is plated with a silver layer.

Preferably, the metal binding wire is made of any one of gold, aluminum and copper.

Preferably, the semiconductor circuit further includes a heat sink mounted on a peripheral side of the package.

Preferably, the material of the metal pin is C194 (-1/2H) copper alloy or KFC (-1/2H) copper alloy.

Preferably, the shape of the metal pin is formed by a press working.

Preferably, the pipeline is filled with a liquid medium with a heat dissipation function.

In a second aspect, an embodiment of the present invention further provides a method for manufacturing a semiconductor circuit, where the method includes:

s1, manufacturing a metal substrate: providing a metal base material, wherein a pipe groove is formed in the back surface of the metal base material, and a pipeline with a heat dissipation function is installed inside the pipe groove; providing an insulating layer and a copper foil layer, and laminating the insulating layer and the copper foil layer to form a laminated semi-finished product; laminating the insulating layer of the laminated semi-finished product and the front surface of the metal base material to form a metal base plate semi-finished product; etching the surface of the copper foil layer of the semi-finished metal substrate to form a circuit layer; arranging a protective layer on the surface of the circuit layer to obtain a finished metal substrate;

s2, mounting components on the metal substrate: placing the metal substrate finished product into a special carrier, and pasting the components on the component mounting positions through automatic crystal sticking equipment by brushing tin paste or dispensing silver paste on the component mounting positions reserved on the copper foil circuit layer of the metal substrate finished product;

s3, manufacturing a semi-finished product of the component: the high-voltage power device is pasted on a heat dissipation sheet with a silver-plated surface through a soft solder die bonder to form a semi-finished product of the device;

s4, automatically mounting a patch: mounting the chip resistor, the chip capacitor and the semi-finished product of the component on a component mounting position through automatic chip mounting SMT equipment;

s5, welding of components: placing the lead frame to a corresponding welding position of the metal substrate through a manipulator or manually, and welding all circuit components to corresponding mounting positions through a reflow oven;

s6, welding quality detection: detecting the welding quality of the components by visual inspection of AOI equipment;

s7, removing residual garbage: cleaning the scaling powder and the aluminum skimmings remained on the metal substrate in a spraying and ultrasonic cleaning mode;

s8, binding line processing: electrically connecting the plurality of circuit components and the circuit wiring by bonding metal wires;

s9, packaging and marking: the metal substrate is subjected to plastic package through packaging equipment, so that the pipeline and one surface of the metal substrate are exposed out of the packaging body or the pipeline and the metal substrate are packaged into the packaging body together, and then the product is marked through laser marking;

s10, stress relief treatment: performing post-curing stress-relief treatment on the product through a high-temperature oven;

s11, cutting off pin connecting ribs: cutting off the connecting ribs and the false pins of the pins by rib cutting and forming equipment, shaping the required shapes, and finally testing electrical parameters to form a final qualified product;

s12, mounting a radiator: and aligning and mounting the qualified semiconductor circuit pipeline protrusion and the radiator recess to realize the positioning and the jointing between the semiconductor circuit substrate and the radiator surface, and finally realizing the mounting of the semiconductor circuit on the electric control board through the connection of the radiator and the electric control board.

Compared with the prior art, the invention achieves the purpose of increasing the heat capacity of the product by embedding the pipeline with the heat dissipation effect (the pipeline is filled with the liquid medium with the heat dissipation function) into the semiconductor circuit. In addition, the packaging body of the invention adopts two packaging modes: 1. in a semi-encapsulation mode, the embedded pipeline comprises a metal substrate which is exposed on the surface of the packaging body, and the joint between the pipeline protrusion and the pipeline recess can be realized only by aligning when the semiconductor circuit and the radiator are installed, so that the accurate positioning and the accurate heat dissipation of the semiconductor circuit on the radiator are realized; because the existing semiconductor circuit is positioned on the radiator through the screws, the precise positioning can be realized without screw installation after the structural design of the invention is used, the use of the screws and screw twisting processes are saved, the installation cost is reduced, the installation efficiency is improved, and meanwhile, after the screw installation and positioning are not needed, the design of the screw installation position is not needed to be reserved for the external structure of the semiconductor circuit, the complexity of the external structure of the semiconductor circuit is reduced, and the risk of edge breakage of the external plastic package material of the semiconductor circuit caused by the installation of the screws is avoided. 2. The fully-encapsulated pipeline and the metal substrate are embedded in the packaging body, so that the bonding force between the metal substrate and resin can be improved.

Drawings

The present invention is described in detail below with reference to the attached drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings. In the drawings:

FIG. 1 is a front view of the internal structure of a semiconductor circuit of the present invention;

FIG. 2 is a schematic diagram of a semiconductor circuit according to the present invention;

FIG. 3 is a schematic view of the semiconductor circuit and heat sink assembly of the present invention;

FIG. 4 is a schematic diagram of a semiconductor circuit according to another embodiment of the present invention;

FIG. 5 is a schematic view of a semiconductor circuit and heat sink assembly according to another embodiment of the present invention;

FIG. 6 is a schematic view of a semiconductor circuit mounting heat sink according to the present invention;

FIG. 7 is a flow chart of a method of manufacturing a semiconductor circuit of the present invention.

Detailed Description

The following detailed description of embodiments of the invention refers to the accompanying drawings.

The embodiments/examples described herein are specific embodiments of the present invention, are intended to be illustrative of the concepts of the present invention, are intended to be illustrative and exemplary, and should not be construed as limiting the embodiments and scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include those which make any obvious replacement or modification of the embodiments described herein, and all of which are within the scope of the present invention.

Example one

Referring to fig. 1-5, a semiconductor circuit 1000 according to the present invention includes: the metal substrate 100 comprises a metal substrate 01, a pipe groove A formed in the back surface 01 of the metal substrate, a pipeline 13 which is embedded in the pipe groove A and has a heat dissipation function, and a circuit wiring layer 50 which is pressed on one surface of the metal substrate 01 far away from the pipe groove A; the plurality of circuit components 20 are disposed at specific positions of the circuit wiring layer 500; the binding metal wire 12 is used for realizing the electric connection among the plurality of circuit components 20; the metal pin 10 is connected with the circuit wiring layer 50 and extends out of the metal substrate 100; the package 11 is half-wrapped on the front side of the metal substrate (as shown in fig. 2) or fully wrapped on the entire metal substrate (as shown in fig. 4) to seal at least the connection portion of the metal pin and the circuit wiring layer.

In this embodiment, the semiconductor circuit 1000 further includes a heat sink 15 mounted on the periphery of the package 11, for transferring heat of the metal substrate 100 to the heat sink to achieve rapid heat dissipation by the flow of air driven by a fan; the pipe 13 is filled with a liquid medium (e.g., water) having a heat dissipation function.

In the above configuration, the heat capacity of the product is increased by inserting the pipe 13 having a heat radiation effect (the pipe 13 is filled with a liquid medium having a heat radiation function) into the semiconductor circuit 1000. In addition, the package 11 adopts two encapsulation methods: 1. in a semi-encapsulated form (as shown in fig. 3), the embedded pipeline 13 includes a metal substrate 100 exposed on the surface of the package body 11, and when the semiconductor circuit is mounted on the heat sink 15, the pipeline can be attached only by aligning the protrusion and the recess of the pipeline, so that the semiconductor circuit can be accurately positioned on the heat sink and accurately dissipate heat; because the existing semiconductor circuit is positioned on the radiator through the screws, the accurate positioning can be realized without screw installation after the structural design, the use of the screws is saved, the screw twisting process is omitted, the installation cost is reduced, the installation efficiency is improved, and meanwhile, after the screw installation positioning is not required, the design of the screw installation position is not required to be reserved for the external structure of the semiconductor circuit, the complexity of the external structure of the semiconductor circuit is reduced, and the risk that the edge of the external plastic package material of the semiconductor circuit is broken due to the installation of the screws is avoided. 2. In a fully encapsulated form (as shown in fig. 5), the embedded pipes 13 and the metal substrate 100 are inside the package body 11, so that the bonding force of the metal substrate and the resin can be improved.

Specifically, the circuit wiring layer 50 includes an insulating layer 02 and a copper foil layer 03 stacked on the metal substrate 100, a wiring layer B formed by etching the surface of the copper foil layer 03, and a protection layer 04 stacked on the wiring layer B, and the metal pin 10 is connected to the wiring layer B and extends out of the metal substrate 100.

The metal base material 01 serves as a carrier of the entire internal circuit of the semiconductor circuit and plays a role in heat dissipation of the entire semiconductor circuit; the insulating layer 02 is provided to prevent the risk of short circuit and leakage of the internal circuit caused by the conduction of electricity between the circuit wiring layer 50 and the metal substrate 01; a copper foil layer 03 having a wiring layer B formed by etching a desired circuit; the protective layer 04 is also called as a green oil layer, prevents tin from being applied to places where tin is not applied, increases the withstand voltage between circuits, prevents short circuit caused by oxidation or pollution of the circuits, and plays a role in protecting the circuits; the packaging body 11 is a powder molding compound prepared by mixing epoxy resin as matrix resin, high-performance phenolic resin as curing agent, silicon micropowder and the like as fillers and a plurality of additives, extruding the powder molding compound into a die cavity by a heat transfer molding method, embedding a semiconductor chip in the die cavity, and simultaneously performing cross-linking, curing and molding to form a device with a certain shape structure.

Further, the circuit components 20 include a chip resistor 05, a chip capacitor 06, a component 07 and a component semi-finished product 08 which are welded on the wiring layer B; the semi-finished component comprises a radiating fin 09 welded on the wiring layer and a high-voltage power device G attached to the surface of the radiating fin 09.

It is worth mentioning that the chip resistor 05 is connected to the gate of the IGBT chip in the semiconductor circuit, and the switching speed of the IGBT chip is limited by current limiting; the chip capacitor 06 plays roles of filtering, coupling and bootstrap in the semiconductor circuit; the component 07, make up the chip that the internal functional circuit of the semiconductor circuit needs; and (3) mounting a high-voltage power component G with high heat dissipation requirement on a small heat sink 09 to form the component semi-finished product 08.

In this embodiment, the surface of the heat sink 09 is plated with a silver layer, so that the surface high-voltage power component G and the heat sink 09 can be better attached to each other, and the heat dissipation capability is improved.

Furthermore, the metal pins are made of C194 (-1/2H) copper alloy (chemical composition: cu (97.0) Fe: 2.4P; the metal pin 10 is formed by performing stamping processing on a 0.5mm copper plate through machining to form a required shape, and then performing nickel plating on the surface to a thickness of 0.1-0.5um and then performing tin plating on the surface to a thickness of 2-5 um.

Preferably, in the present embodiment, the metal binding wire 30 is made of any one of gold, aluminum, and copper, but is not limited thereto.

Example two

Referring to fig. 7, fig. 7 is a flow chart of a method for manufacturing a semiconductor circuit according to the present invention. The embodiment of the present invention further provides a manufacturing method of a semiconductor circuit, based on the semiconductor circuit of the first embodiment, the method includes the following steps:

s1, manufacturing a metal substrate: providing a metal base material, wherein a pipe groove is formed in the back surface of the metal base material, and a pipeline with a heat dissipation function is installed inside the pipe groove; providing an insulating layer and a copper foil layer, and laminating the insulating layer and the copper foil layer to form a laminated semi-finished product; laminating the insulating layer of the laminated semi-finished product and the front surface of the metal base material to form a metal substrate semi-finished product; etching the surface of the copper foil layer of the semi-finished metal substrate to form a circuit layer; arranging a protective layer on the surface of the circuit layer to obtain a finished metal substrate;

s2, mounting components on the metal substrate: placing the metal substrate finished product into a special carrier, and pasting the components on the component mounting positions through automatic crystal sticking equipment by brushing tin paste or dispensing silver paste on the component mounting positions reserved on the copper foil circuit layer of the metal substrate finished product;

s3, manufacturing a semi-finished product of the component: the high-voltage power device is pasted on a heat dissipation sheet with a silver-plated surface through a soft solder die bonder to form a semi-finished product of the device;

s4, automatically mounting a patch: mounting the chip resistor, the chip capacitor and the semi-finished product of the component on a component mounting position through automatic chip mounting SMT equipment;

s5, welding of components: placing the lead frame to a corresponding welding position of the metal substrate through a manipulator or manually, and welding all circuit components to corresponding mounting positions through a reflow oven;

s6, welding quality detection: detecting the welding quality of the components by visual inspection of AOI equipment;

s7, removing residual garbage: cleaning the scaling powder and the aluminum skimmings remained on the metal substrate in a spraying and ultrasonic cleaning mode;

s8, binding line processing: electrically connecting the plurality of circuit components and the circuit wiring by bonding metal wires;

s9, packaging and marking: the metal substrate is subjected to plastic package through packaging equipment, so that the pipeline and one surface of the metal substrate are exposed out of the packaging body or the pipeline and the metal substrate are packaged into the packaging body together, and then the product is marked through laser marking;

s10, stress relief treatment: performing post-curing stress-relief treatment on the product through a high-temperature oven;

s11, cutting off pin connecting ribs: cutting off the connecting ribs and the false pins of the pins by rib cutting and forming equipment, shaping the required shapes, and finally testing electrical parameters to form a final qualified product;

s12, mounting a radiator: and aligning and mounting the qualified semiconductor circuit pipeline protrusion and the radiator recess to realize the positioning and the jointing between the semiconductor circuit substrate and the radiator surface, and finally realizing the mounting of the semiconductor circuit on the electric control board through the connection of the radiator and the electric control board.

Specifically, the manufactured metal substrate 100 is placed in a special carrier (the carrier can be made of materials with high temperature resistance of more than 200 ℃ such as aluminum, synthetic stone, ceramics, PPS, and the like), and the component 07 is mounted on the component mounting position through automatic die bonding equipment (DA machine) by brushing solder paste or dispensing silver paste on the component mounting position reserved in the copper foil circuit layer. And (3) attaching the high-voltage power device G (PFC circuit) to the copper radiating fin 09 with the silver plated surface by using a soft solder die bonder to form a semi-finished component 08. The method comprises the steps of loading a chip resistor 05, a chip capacitor 06 and a semi-finished product 08 of a component on a component mounting position through an automatic chip SMT (surface mount technology) device, placing a lead frame on a corresponding welding position of a metal substrate 100 through a manipulator or manually, welding all circuit components on the corresponding mounting position through a reflow furnace together by the whole semi-finished product including a carrier, detecting the welding quality of the components through a visual inspection AOI (automated optical inspection) device, cleaning foreign matters such as scaling powder and aluminum scraps remained on an insulating substrate through cleaning modes such as spraying and ultrasonic, packaging the plurality of circuit components and the circuit wiring into an encapsulation body 11 through a metal binding line, carrying out plastic encapsulation on a substrate circuit through an encapsulation device in a specific die to enable a pipeline 13 and the metal substrate 100 to be exposed out of the encapsulation body 11 or enable the pipeline 13 and the metal substrate 100 to be packaged into the encapsulation body 11 together, marking the product through a laser, carrying out post-curing stress removal treatment on the product through a high-temperature oven, cutting forming device to cut off connecting ribs and dummy pins of the pins and form required shapes, finally carrying out electrical parameter testing on the final product, aligning the qualified semiconductor circuit to the semiconductor mounting position between the semiconductor circuit and the radiator, and realizing the final positioning of the radiator through the radiator.

Compared with the prior art, the invention achieves the purpose of increasing the heat capacity of the product by embedding the pipeline with the heat dissipation effect (the pipeline is filled with the liquid medium with the heat dissipation function) into the semiconductor circuit. In addition, the packaging body of the invention adopts two packaging modes: 1. in a semi-encapsulation mode, the embedded pipeline comprises a metal substrate which is exposed on the surface of the packaging body, and the joint between the pipeline protrusion and the pipeline recess can be realized only by aligning when the semiconductor circuit and the radiator are installed, so that the accurate positioning and the accurate heat dissipation of the semiconductor circuit on the radiator are realized; because the existing semiconductor circuit is positioned on the radiator through the screws, the precise positioning can be realized without screw installation after the structural design of the invention is used, the use of the screws and screw twisting processes are saved, the installation cost is reduced, the installation efficiency is improved, and meanwhile, after the screw installation and positioning are not needed, the design of the screw installation position is not needed to be reserved for the external structure of the semiconductor circuit, the complexity of the external structure of the semiconductor circuit is reduced, and the risk of edge breakage of the external plastic package material of the semiconductor circuit caused by the installation of the screws is avoided. 2. In a full-encapsulation mode, the embedded pipeline and the metal substrate are arranged in the packaging body, so that the bonding force between the metal substrate and the resin can be improved.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.

Claims (10)

1. A semiconductor circuit, comprising:

the metal substrate comprises a metal base material, a pipe groove arranged on the back surface of the metal base material, a pipeline which is embedded in the pipe groove and has a heat dissipation function, and a circuit wiring layer which is pressed on one surface of the metal base material far away from the pipe groove;

a plurality of circuit components arranged at specific positions of the circuit wiring layer;

a bonding wire for electrically connecting the plurality of circuit components;

a metal pin connected with the circuit wiring layer and extending out of the metal substrate;

and the packaging body is coated on the front side surface of the metal substrate in a half way or completely coated on the whole metal substrate so as to seal at least the connecting part of the metal pin and the circuit wiring layer.

2. The semiconductor circuit according to claim 1, wherein the circuit wiring layer comprises an insulating layer and a copper foil layer stacked on the metal base material, a wiring layer is formed by etching a surface of the copper foil layer, and a protective layer stacked on the wiring layer, and the metal pin is connected to the wiring layer and extends out of the metal substrate.

3. The semiconductor circuit of claim 2, wherein said plurality of circuit components includes chip resistors, chip capacitors, components and component semi-finished products soldered to said wiring layer; the semi-finished component comprises a radiating fin welded on the wiring layer and a high-voltage power device attached to the surface of the radiating fin.

4. The semiconductor circuit of claim 1, wherein a surface of the heat sink is plated with a silver layer.

5. The semiconductor circuit according to claim 1, wherein the metal binding wire is made of any one of gold, aluminum, and copper.

6. The semiconductor circuit according to claim 1, further comprising a heat sink mounted on a peripheral side of the package body.

7. The semiconductor circuit according to claim 1, wherein the metal leads are made of a C194 (-1/2H) copper alloy or a KFC (-1/2H) copper alloy.

8. The semiconductor circuit of claim 7, wherein the shape of the metal pin is formed by a stamping process.

9. The semiconductor circuit according to claim 1, wherein the pipe contains a liquid medium having a heat dissipation function.

10. A method of manufacturing a semiconductor circuit comprising a semiconductor circuit according to any of claims 1-9, the method comprising the steps of:

s1, manufacturing a metal substrate: providing a metal base material, wherein a pipe groove is formed in the back surface of the metal base material, and a pipeline with a heat dissipation function is installed inside the pipe groove; providing an insulating layer and a copper foil layer, and laminating the insulating layer and the copper foil layer to form a laminated semi-finished product; laminating the insulating layer of the laminated semi-finished product and the front surface of the metal base material to form a metal base plate semi-finished product; etching the surface of the copper foil layer of the semi-finished metal substrate to form a circuit layer; arranging a protective layer on the surface of the circuit layer to obtain a finished metal substrate product;

s2, mounting components on the metal substrate: placing the metal substrate finished product into a special carrier, and pasting the components on the component mounting positions through automatic crystal sticking equipment by brushing tin paste or dispensing silver paste on the component mounting positions reserved on the copper foil circuit layer of the metal substrate finished product;

s3, manufacturing a semi-finished product of the component: the high-voltage power device is pasted on a heat dissipation sheet with a silver-plated surface through a soft solder die bonder to form a semi-finished product of the device;

s4, automatically mounting a patch: mounting the chip resistor, the chip capacitor and the semi-finished product of the component on a component mounting position through automatic chip SMT equipment;

s5, welding of components: placing the lead frame to a corresponding welding position of the metal substrate through a manipulator or manually, and welding all circuit components to corresponding mounting positions through a reflow oven;

s6, welding quality detection: detecting the welding quality of the components by visual inspection of AOI equipment;

s7, removing residual garbage: cleaning the scaling powder and the aluminum skimmings remained on the metal substrate in a spraying and ultrasonic cleaning mode;

s8, binding line processing: electrically connecting the plurality of circuit components and the circuit wiring by bonding metal wires;

s9, packaging and marking: the metal substrate is subjected to plastic package through packaging equipment, so that the pipeline and one surface of the metal substrate are exposed out of the packaging body or the pipeline and the metal substrate are packaged into the packaging body together, and then the product is marked through laser marking;

s10, stress relief treatment: performing post-curing stress-relief treatment on the product through a high-temperature oven;

s11, cutting off pin connecting ribs: cutting off the connecting ribs and the false pins of the pins by rib cutting and forming equipment, shaping the required shapes, and finally testing electrical parameters to form a final qualified product;

s12, mounting a radiator: and aligning and mounting the qualified semiconductor circuit pipeline protrusion and the radiator recess to realize the positioning and the jointing between the semiconductor circuit substrate and the radiator surface, and finally realizing the mounting of the semiconductor circuit on the electric control board through the connection of the radiator and the electric control board.

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