CN116798972A - Semiconductor refrigerating system and manufacturing method - Google Patents
Semiconductor refrigerating system and manufacturing method Download PDFInfo
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- CN116798972A CN116798972A CN202310751971.9A CN202310751971A CN116798972A CN 116798972 A CN116798972 A CN 116798972A CN 202310751971 A CN202310751971 A CN 202310751971A CN 116798972 A CN116798972 A CN 116798972A
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- 239000011889 copper foil Substances 0.000 claims description 26
- 239000011265 semifinished product Substances 0.000 claims description 24
- 239000000047 product Substances 0.000 claims description 22
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/345—Arrangements for heating
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The application provides a semiconductor refrigeration system and a manufacturing method thereof, comprising the following steps: the semiconductor device comprises a first refrigeration ceramic plate, a plurality of NP-type semiconductors, a semiconductor circuit, pins arranged on one side of the semiconductor circuit at intervals, a metal plate arranged on one side of the NP-type semiconductors far away from the semiconductor circuit, a second refrigeration ceramic plate arranged on one side of the metal plate far away from the NP-type semiconductors, direct current power supply conductive columns arranged on two sides of the NP-type semiconductors, a packaging body, an interface, screw holes and an electric control plate; the two ends of the direct current power supply conductive column are respectively connected to the semiconductor circuit and the metal sheet through interfaces, the semiconductor circuit is fixedly connected with the electric control plate through screws, the NP-type semiconductors are connected with the metal sheet, and the packaging body is used for packaging the first refrigeration ceramic sheet and the semiconductor circuit. The semiconductor refrigeration system provided by the application is convenient to integrate, good in refrigeration effect and high in reliability, meets the high-integration electronic control miniaturization requirement and improves the installation efficiency.
Description
Technical Field
The application relates to the technical field of intelligent power modules, in particular to a semiconductor refrigerating system.
Background
The semiconductor circuit, i.e. the modularized intelligent power system MIPS (Module Intelligent Power System), not only integrates the power switch device and the driving circuit, but also is internally provided with fault detection circuits such as overvoltage, overcurrent, overheat and the like, and can send detection signals to the CPU or the DSP for interrupt processing. The high-speed low-power-consumption integrated circuit consists of a high-speed low-power-consumption tube core, an optimized gate-level driving circuit and a rapid protection circuit. The MIPS itself may not be damaged even if a load accident or misuse occurs. MIPS generally use IGBTs as power switching elements and incorporate an integrated structure of a current sensor and a driving circuit.
The IC driving control circuit, the MIPS sampling amplifying circuit, the inverter circuit composed of the PFC current protection circuit and other low-voltage control circuits and the high-voltage semiconductor circuit of the traditional MIPS modularized intelligent power system are distributed on the same board, meanwhile, the traditional MIPS modularized intelligent power system only integrates a single MIPS module, the integration of a plurality of MIPS modularized intelligent power systems is not realized yet, and the high integration and high heat dissipation technology of the MIPS modularized intelligent power system are put forward higher requirements in the face of market miniaturization and low cost competition.
However, the above-mentioned semiconductor refrigeration system is troublesome to integrate, has a poor refrigeration effect, is inconvenient to install, has poor reliability, and has poor market competitiveness.
Disclosure of Invention
Aiming at the defects of the related technology, the application provides a semiconductor refrigerating system which is convenient to integrate, good in refrigerating effect, high in reliability and convenient to install.
To solve the above technical problem, in a first aspect, an embodiment of the present application provides a semiconductor refrigeration system, including: the semiconductor device comprises a first refrigeration ceramic piece, a plurality of NP-type semiconductors arranged on one side of the first refrigeration ceramic piece, a semiconductor circuit arranged on the other side of the first refrigeration ceramic piece, pins arranged on one side of the semiconductor circuit and spaced, a metal sheet arranged on one side of the NP-type semiconductors, which is far away from the semiconductor circuit, a second refrigeration ceramic piece arranged on one side of the metal sheet, which is far away from the NP-type semiconductors, a direct current power supply conductive column, a packaging body, an interface, screw holes and an electric control plate, wherein the direct current power supply conductive column, the packaging body, the interface and the screw holes are arranged on two sides of the NP-type semiconductors; the two ends of the direct-current power supply conductive column are respectively connected to the semiconductor circuit and the metal sheet through the interfaces, the semiconductor circuit is fixedly connected with the electric control plate through the screw holes through screws, the NP-type semiconductors are connected with the metal sheet, and the packaging body is used for packaging the first refrigeration ceramic sheet and the semiconductor circuit.
Preferably, the semiconductor circuit comprises a metal substrate stacked on the other side of the first refrigeration ceramic plate, an insulating layer arranged on the metal substrate, a copper foil layer arranged on the insulating layer, a chip resistor, a chip capacitor, components, a semi-finished component, a radiating fin and a plurality of wires arranged on the copper foil layer; the chip resistor, the chip capacitor, the component and the component semi-finished product are respectively and electrically connected with the copper foil layer through the plurality of leads.
Preferably, the semiconductor circuit further comprises a protective layer attached to the copper foil layer, and the protective layer is arranged among the chip resistor, the chip capacitor, the component and the component semi-finished product at intervals.
Preferably, the radiating fin is formed by adopting a copper surface silver plating process to realize the bonding arrangement of the component semiconductor and the radiating fin.
Preferably, a first refrigeration ceramic plate at one end of the direct-current power supply conductive column is connected, and the other end of the direct-current power supply conductive column is connected with a second refrigeration ceramic plate, so that the first refrigeration ceramic plate and the second refrigeration ceramic plate can perform refrigeration or heating conversion by changing the polarity of direct current.
Preferably, the plurality of NP semiconductors includes 4 and is disposed side by side on the metal sheet.
Preferably, the packaging body is formed by taking epoxy resin as matrix resin, taking high-performance phenolic resin as curing agent, adding silicon micropowder as filler and adding powdery molding compound mixed by a plurality of auxiliary agents, extruding the molding compound into a mold cavity by a heat transfer molding method, embedding the semiconductor circuit therein, and simultaneously crosslinking, curing and molding.
In a second aspect, an embodiment of the present application provides a method for manufacturing a semiconductor refrigeration system, including the steps of:
s1, placing a substrate finished product of a refrigeration ceramic wafer into a special carrier through automatic equipment or manual operation;
s2, mounting a semiconductor inverter circuit chip on a component mounting position reserved on a copper foil layer of the substrate through brushing solder paste or dispensing silver paste through automatic die bonding equipment;
s3, mounting the high-voltage power device on a radiating fin with silver plated surface through a soft solder die bonder to form a semi-finished product of the component;
s4, mounting the resistor, the capacitor and the semi-finished product of the component on a component mounting position through automatic SMT mounting equipment;
s5, placing the lead frame to a corresponding welding position of the metal substrate through a mechanical arm or manually, and welding all components to the corresponding mounting position through a reflow oven by the whole semi-finished product including the carrier;
s6, detecting the welding quality of the components through visual inspection AOI equipment;
s7, cleaning the scaling powder and oxidized pollutants remained on the plurality of metal plates in a spraying and ultrasonic cleaning mode;
s8, electrically connecting the resistor, the capacitor and the component with the copper foil layer respectively through binding wires;
s9, packaging the component semi-finished product in a specific die through packaging equipment, and marking the product through laser marking;
s10, performing post-curing stress relief treatment on the product through a high-temperature oven;
s11, cutting off the connecting ribs and the dummy pins of the pins through rib cutting forming equipment and shaping the pins into the required shapes;
s12, performing electrical parameter test through test equipment to form a qualified finished product.
Compared with the prior art, the semiconductor circuit is arranged on the other side of the first refrigeration ceramic plate through the NP-type semiconductors on one side of the first refrigeration ceramic plate, the semiconductor circuit is arranged on the other side of the first refrigeration ceramic plate, pins arranged on two sides of the semiconductor circuit are used for being connected with an external power supply, metal plates are arranged on one side, far away from the semiconductor circuit, of the NP-type semiconductors, direct-current power supply conductive columns are arranged on two sides of the NP-type semiconductors, the metal plates are far away from the NP-type semiconductors, two ends of the direct-current power supply conductive columns are respectively connected to the semiconductor circuit and the metal plates through the interfaces, the semiconductor circuit is fixedly connected with the electric control plate through screws, the NP-type semiconductors are connected with the metal plates, and the package body is used for packaging the first refrigeration ceramic plate and the semiconductor circuit. When the Peltier effect of the semiconductor material is utilized to realize the couple formed by connecting direct current with two different semiconductor materials in series, the two ends of the couple can absorb heat and release heat respectively, so that the aim of refrigeration is fulfilled; the temperature detection circuit is integrated through the internal drive IC chip of the semiconductor circuit, the direct-current power supply control circuit of the automatic refrigeration ceramic substrate is integrated, and the refrigeration or heating of the ceramic substrate can be controlled according to the environmental temperature and the working temperature of the semiconductor circuit, so that the internal chip of the semiconductor circuit is always in a relatively constant-temperature working environment, the reliability of products is improved, and the chip integration is realized; meanwhile, the refrigerating ceramic substrate is of a double-ceramic-plate structure, so that the binding force between the ceramic substrate and the plastic packaging material can be improved; the direct-current power supply terminal is connected with the circuit of the semiconductor circuit through the conductive column structure, so that the integration of an internal circuit is realized, and the reliability of a product is improved. The conductive column is matched with the direct current power supply access port on the outer surface of the semiconductor circuit package body, so that the refrigeration and heat dissipation system and the semiconductor circuit are better positioned.
Drawings
The present application will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the application will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
FIG. 1 is a front view of a semiconductor refrigeration system of the present application;
FIG. 2 is a side view of the semiconductor refrigeration system of the present application;
FIG. 3 is a schematic diagram of the installation of the semiconductor refrigeration system of the present application;
fig. 4 is a flow chart of a method of manufacturing a semiconductor refrigeration system according to the present application.
In the figure, 01, a metal base material, 02, an insulating layer, 03, a copper foil layer, 04, a protective layer, 05, a chip resistor, 06, a chip capacitor, 07, a component, 08, a component semi-finished product, 09, a radiating fin, 10, a pin, 11, a package, 12, a wire, 13, a direct current power supply conductive column, 14, a metal sheet, 15, an interface, 16, an NP type semiconductor, 17, a first refrigeration ceramic sheet, 18, a screw hole, 19, a second refrigeration ceramic sheet, 20 and a semiconductor circuit.
Detailed Description
The following describes in detail the embodiments of the present application with reference to the drawings.
The detailed description/examples set forth herein are specific embodiments of the application and are intended to be illustrative and exemplary of the concepts of the application and are not to be construed as limiting the scope of the application. In addition to the embodiments described herein, those skilled in the art will be able to adopt other obvious solutions based on the disclosure of the claims and specification, including any obvious alterations and modifications to the embodiments described herein, all within the scope of the present application.
Example 1
As shown in fig. 1-3, the present application provides a semiconductor refrigeration system comprising: the semiconductor device comprises a first refrigerating ceramic plate 17, a plurality of NP-type semiconductors 16 arranged on one side of the first refrigerating ceramic plate 17, a semiconductor circuit 20 arranged on the other side of the first refrigerating ceramic plate 17, pins 10 arranged on one side of the semiconductor circuit 20 at intervals, a metal sheet 14 arranged on one side of the NP-type semiconductors 16 away from the semiconductor circuit 20, a second refrigerating ceramic plate 19 arranged on one side of the metal sheet 14 away from the NP-type semiconductors 16, direct current power supply conductive columns 13 arranged on two sides of the NP-type semiconductors 16, a package 11, an interface 15, screw holes 18 and an electric control board; the two ends of the direct current power supply conductive column 13 are respectively connected to the semiconductor circuit 20 and the metal sheet 14 through the interface 15, the semiconductor circuit 20 and the electric control board are fixedly connected through the screw holes 18 through screws, the plurality of NP-type semiconductors 16 are connected with the metal sheet 14, and the packaging body 11 is used for packaging the first refrigeration ceramic sheet 17 and the semiconductor circuit 20.
The first refrigerating ceramic sheet 17 and the second refrigerating ceramic sheet 19 are used as carriers of the semiconductor circuit 20 and play a role in heat dissipation of the power device. The NP-type semiconductor 16 utilizes the Peltier effect (Peltier effect) of semiconductor materials, and when a direct current passes through a couple formed by connecting two different semiconductor materials in series, the two ends of the couple can absorb heat and release heat, respectively, so as to achieve the purpose of refrigeration. The peltier effect refers to the phenomenon that when current passes through loops formed by different conductors, heat absorption and heat release occur at joints of different conductors respectively along with different current directions, besides irreversible joule heat.
The pin 10 is made of C194 (-1/2H) (chemical composition: cu (> 97.0) Fe:2.4P:0.03Zn: 0.12) or KFC (-1/2H) (chemical composition: cu (> 99.6) Fe:0.1 (0.05-0.15) P:0.03 (0.025-0.04)), and is formed into a required shape by punching a 0.5mm copper plate through machining, and then nickel plating thickness of 0.1-0.5um and tin plating thickness of 2-5um are performed on the surface.
When the Peltier effect of the semiconductor material is utilized to realize the couple formed by connecting direct current with two different semiconductor materials in series, the two ends of the couple can absorb heat and release heat respectively, so that the aim of refrigeration is fulfilled; the temperature detection circuit is integrated through the internal drive IC chip of the semiconductor circuit 20, the direct-current power supply control circuit of the automatic refrigeration ceramic substrate is integrated, and the refrigeration or heating of the ceramic substrate can be controlled according to the ambient temperature and the working temperature of the semiconductor circuit 20, so that the internal chip of the semiconductor circuit 20 is always in a relatively constant-temperature working environment, the reliability of products is improved, and the chip integration is realized; meanwhile, the refrigerating ceramic substrate is of a double-ceramic-plate structure, so that the binding force between the ceramic substrate and the plastic packaging material can be improved; the direct current power supply terminal is connected with the circuit of the semiconductor circuit 20 through the conductive column 13 structure, so that the integration of the internal circuit is realized, and the reliability of the product is improved.
Specifically, the refrigerating ceramic plate is a cooling device composed of semiconductors, and the working principle is that the Peltier effect of semiconductor materials is utilized to provide energy required by electron flow from a direct current power supply, after the power supply is turned on, an electron cathode starts, the electron cathode firstly passes through a P-type semiconductor to absorb heat, the heat reaches an N-type semiconductor and is released, and each time the heat passes through one NP module, the heat is sent to the other side from one side to cause temperature difference to form a refrigerating end. The refrigeration ceramic substrate is respectively composed of a first ceramic plate and a second ceramic plate, wherein the first ceramic plate is used for pasting a device and is generally a refrigeration end, the second ceramic plate is connected with a radiator and is generally a heating end, and the refrigeration or heating conversion of the two ceramic plates can be realized by changing the polarity of direct current. The application integrates the temperature detection circuit in the IC circuit, carries out temperature detection on the heating of the power device in the semiconductor circuit 20 through the temperature detection circuit in the IC circuit, and controls the polarity of the direct current of the refrigeration ceramic substrate according to the detection result, thereby realizing the refrigeration of the ceramic substrate and finally realizing the heat dissipation of the power device on the surface of the ceramic substrate.
In this embodiment, the semiconductor circuit 20 includes a metal substrate 01 stacked on the other side of the first cooling ceramic plate 17, an insulating layer 02 disposed on the metal substrate 01, a copper foil layer 03 disposed on the insulating layer 02, a chip resistor 05, a chip capacitor 06, a component 07, a component semi-finished product 08, a heat sink 09, and a plurality of wires 12 disposed on the copper foil layer 03; the chip resistor 05, the chip capacitor 06, the component 07, and the component semi-finished product 08 are electrically connected to the copper foil layer 03 through the plurality of wires 12. The metal base material 01 serves as a carrier of the semiconductor circuit 20 to dissipate heat from the power device.
The insulating layer 02 is used for preventing the risk of short-circuiting and leakage of the internal circuit caused by the electrification of the circuit wiring layer and the metal base material 01.
The copper foil layer 03 is etched to form a desired circuit to form a circuit wiring layer, and at the same time, as a kind of soldering medium (pad), the copper foil layer 03 realizes the electrical connection of the surface mount component 07 and the circuit, facilitating the connection of the circuit components on the semiconductor circuit 20.
The wires 12 are typically gold, aluminum, copper, etc., and the wires 12 are used to electrically connect the components 07 within the semiconductor circuit 20.
The chip resistor 05 is connected to the gate of the IGBT chip in the semiconductor circuit 20, and the effect of limiting the switching speed of the IGBT is achieved through current limiting. The patch capacitor 06 plays roles of filtering, coupling and bootstrapping in the semiconductor circuit 20; the component 07 is used for forming chips required by functional circuits in the semiconductor circuit 20; the component semi-finished product 08 is used for attaching the high-voltage power component 07 with high heat dissipation requirement to a small heat sink 09 to form the component semi-finished product 08; the radiating fin 09 adopts a copper surface silver plating process, so that better bonding between the surface component 07 and the radiating fin 09 can be realized, and the radiating capability is improved.
Specifically, the metal substrate 01 is disposed on the other side of the first refrigerating ceramic sheet 17 to serve as a carrier of the semiconductor circuit 20 for heat dissipation of the power device. An insulating layer 02 is arranged between the metal base material 01 and the copper foil layer 03 for insulation, so that the internal circuit short circuit and electric leakage caused by the copper foil layer 03 and a metal base material 01 channel are prevented, and the safety is high. The copper foil layer 03 is made into a circuit wiring layer, and at the same time, as a kind of soldering medium (pad), the surface mount component 07 is electrically connected to the circuit. The copper foil layer 03 is convenient to carry out circuit connection among the chip resistor 05, the chip capacitor 06, the component 07 and the component semi-finished product 08 through the lead 12, and has good conductive effect and convenient wiring.
In this embodiment, the semiconductor circuit 20 further includes a protective layer 04 attached to the copper foil layer 03, and the protective layer 04 is disposed between the chip resistor 05, the chip capacitor 06, the component 07 and the component semi-finished product 08 at intervals. The protective layer 04 is also called a green oil layer, prevents the places which are not plated with tin from being plated with tin, increases the voltage resistance between the circuits, prevents the short circuit caused by the oxidation or pollution of the circuits, and protects the circuits.
In this embodiment, the heat sink 09 is bonded to the heat sink 09 by a copper surface silver plating process. The radiating fin 09 adopts a copper surface silver plating process, so that better bonding between the surface component 07 and the radiating fin 09 can be realized, and the radiating capability is improved.
In this embodiment, a first refrigerating ceramic plate 17 is connected to one end of the dc power supply conductive column 13, and the other end of the dc power supply conductive column 13 is connected to a second refrigerating ceramic plate 19, so that the first refrigerating ceramic plate 17 and the second refrigerating ceramic plate 19 perform a refrigerating or heating conversion by changing the polarity of the dc current.
In the present embodiment, the plurality of NP-type semiconductors 16 includes 4 and are disposed side by side on the metal sheet 14. The plurality of NP semiconductors 16 are mounted on the metal sheet 14 such that the metal sheet 14 effects the series connection of NP two semiconductor materials forming a galvanic couple.
In this embodiment, the package 11 is made of epoxy resin as matrix resin, high-performance phenolic resin as curing agent, silica powder as filler, and powdery molding compound mixed by adding various additives, and is extruded into a mold cavity by a heat transfer molding method to embed the semiconductor circuit 20 therein, and is cross-linked, cured and molded to form a device with a certain shape.
Example two
As shown in fig. 4, an embodiment of the present application provides a method for manufacturing a semiconductor refrigeration system, including the following steps:
s1, placing a substrate finished product of a refrigeration ceramic wafer into a special carrier through automatic equipment or manual operation; wherein, the carrier can be aluminum, synthetic stone, ceramic, PPS and other materials with high temperature resistance of more than 200 ℃.
S2, mounting the semiconductor inverter circuit chip on the component mounting position reserved on the copper foil layer of the substrate through brushing solder paste or dispensing silver paste through automatic die bonding equipment.
And S3, mounting the high-voltage power device on a radiating fin with silver plated surface through a soft solder die bonder to form a semi-finished product of the component.
S4, mounting the resistor, the capacitor and the semi-finished product of the component on a component mounting position through automatic SMT equipment.
S5, placing the lead frame to a corresponding welding position of the metal substrate through a mechanical arm or manually, and welding all components to the corresponding mounting position through a reflow oven together with the carrier by the whole semi-finished product.
S6, detecting the welding quality of the components through visual inspection AOI equipment.
And S7, cleaning the scaling powder and oxidized pollutants remained on the plurality of metal plates by a spray and ultrasonic cleaning mode.
S8, electrically connecting the resistor, the capacitor and the component with the copper foil layer respectively through binding wires.
And S9, packaging the component semi-finished product in a specific die through packaging equipment, and marking the product through laser marking.
S10, performing post-curing stress relief treatment on the product through a high-temperature oven.
S11, cutting off the connecting ribs and the dummy pins of the pins through rib cutting forming equipment and shaping the pins into the required shapes.
S12, performing electrical parameter test through test equipment to form a qualified finished product.
Specifically, a finished product of a refrigeration ceramic wafer substrate is placed on a special carrier through automatic equipment or manual operation, a reserved component mounting position of a copper foil circuit layer of the finished product of the substrate is pasted on a component mounting position through automatic die bonding equipment (DA machine) by brushing solder paste or silver dispensing, and a high-voltage power device (PFC circuit) is pasted on a copper radiating fin with silver plated surface by a soft solder die bonder, so that a semi-finished product of the component is formed. The method comprises the steps of mounting a resistor and a capacitor on a component mounting position through automatic SMT equipment, placing a lead frame on a corresponding welding position of a metal substrate through a manipulator or manually, welding all components on the corresponding mounting position through a reflow oven by the aid of a carrier, detecting the welding quality of the components through visual inspection AOI equipment, cleaning foreign matters such as soldering flux and aluminum scraps remained on the substrate through a binding line in a spraying, ultrasonic and other cleaning modes, enabling circuit elements and circuit wiring to form electric connection, performing plastic package on the substrate circuit in a specific die through packaging equipment, marking the product through laser marking, performing post-curing stress relief treatment on the product through a high-temperature oven, cutting the connecting ribs and false pins of pins through a rib cutting forming equipment, and finally performing electric parameter test to form a final qualified product.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any such modifications, equivalents, and improvements that fall within the spirit and principles of the present application are intended to be covered by the following claims.
Claims (8)
1. A semiconductor refrigeration system, comprising: the semiconductor device comprises a first refrigeration ceramic piece, a plurality of NP-type semiconductors arranged on one side of the first refrigeration ceramic piece, a semiconductor circuit arranged on the other side of the first refrigeration ceramic piece, pins arranged on one side of the semiconductor circuit and spaced, a metal sheet arranged on one side of the NP-type semiconductors, which is far away from the semiconductor circuit, a second refrigeration ceramic piece arranged on one side of the metal sheet, which is far away from the NP-type semiconductors, a direct current power supply conductive column, a packaging body, an interface, screw holes and an electric control plate, wherein the direct current power supply conductive column, the packaging body, the interface and the screw holes are arranged on two sides of the NP-type semiconductors; the two ends of the direct-current power supply conductive column are respectively connected to the semiconductor circuit and the metal sheet through the interfaces, the semiconductor circuit is fixedly connected with the electric control plate through the screw holes through screws, the NP-type semiconductors are connected with the metal sheet, and the packaging body is used for packaging the first refrigeration ceramic sheet and the semiconductor circuit.
2. The semiconductor refrigeration system according to claim 1, wherein the semiconductor circuit comprises a metal substrate stacked on the other side of the first refrigeration ceramic sheet, an insulating layer provided on the metal substrate, a copper foil layer provided on the insulating layer, a chip resistor, a chip capacitor, a component semi-finished product, a heat sink and a plurality of wires provided on the copper foil layer; the chip resistor, the chip capacitor, the component and the component semi-finished product are respectively and electrically connected with the copper foil layer through the plurality of leads.
3. The semiconductor refrigeration system of claim 2, wherein the semiconductor circuit further comprises a protective layer attached to the copper foil layer, the protective layer being disposed between the chip resistor, the chip capacitor, the component and the component half-product at intervals.
4. The semiconductor refrigeration system as recited in claim 2 wherein said heat sink is provided by a copper surface plating process to provide for the attachment of said component semiconductor to said heat sink.
5. The semiconductor refrigeration system according to claim 1, wherein a first refrigeration ceramic plate is connected to one end of the dc power supply conductive column, and the other end of the dc power supply conductive column is connected to a second refrigeration ceramic plate, and the first refrigeration ceramic plate and the second refrigeration ceramic plate perform refrigeration or heating conversion by changing polarity of dc current.
6. The semiconductor refrigeration system as recited in claim 1 wherein said plurality of NP-type semiconductors includes 4 and are disposed side by side on said metal sheet.
7. The semiconductor refrigeration system according to claim 1, wherein the package is formed by using epoxy resin as a matrix resin, using high-performance phenolic resin as a curing agent, adding silica micropowder as a filler, adding a powdery molding compound mixed by a plurality of auxiliary agents, extruding the powdery molding compound into a mold cavity by a heat transfer molding method, embedding the semiconductor circuit therein, and simultaneously crosslinking and curing the molding compound.
8. A method of manufacturing a semiconductor refrigeration system according to any one of claims 1 to 7, comprising the steps of:
s1, placing a substrate finished product of a refrigeration ceramic wafer into a special carrier through automatic equipment or manual operation;
s2, mounting a semiconductor inverter circuit chip on a component mounting position reserved on a copper foil layer of the substrate through brushing solder paste or dispensing silver paste through automatic die bonding equipment;
s3, mounting the high-voltage power device on a radiating fin with silver plated surface through a soft solder die bonder to form a semi-finished product of the component;
s4, mounting the resistor, the capacitor and the semi-finished product of the component on a component mounting position through automatic SMT mounting equipment;
s5, placing the lead frame to a corresponding welding position of the metal substrate through a mechanical arm or manually, and welding all components to the corresponding mounting position through a reflow oven by the whole semi-finished product including the carrier;
s6, detecting the welding quality of the components through visual inspection AOI equipment;
s7, cleaning the scaling powder and oxidized pollutants remained on the plurality of metal plates in a spraying and ultrasonic cleaning mode;
s8, electrically connecting the resistor, the capacitor and the component with the copper foil layer respectively through binding wires;
s9, packaging the component semi-finished product in a specific die through packaging equipment, and marking the product through laser marking;
s10, performing post-curing stress relief treatment on the product through a high-temperature oven;
s11, cutting off the connecting ribs and the dummy pins of the pins through rib cutting forming equipment and shaping the pins into the required shapes;
s12, performing electrical parameter test through test equipment to form a qualified finished product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310751971.9A CN116798972A (en) | 2023-06-25 | 2023-06-25 | Semiconductor refrigerating system and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310751971.9A CN116798972A (en) | 2023-06-25 | 2023-06-25 | Semiconductor refrigerating system and manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| CN116798972A true CN116798972A (en) | 2023-09-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310751971.9A Pending CN116798972A (en) | 2023-06-25 | 2023-06-25 | Semiconductor refrigerating system and manufacturing method |
Country Status (1)
| Country | Link |
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| CN (1) | CN116798972A (en) |
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2023
- 2023-06-25 CN CN202310751971.9A patent/CN116798972A/en active Pending
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