CN116741766B - Manufacturing method of intelligent power module device - Google Patents
Manufacturing method of intelligent power module device Download PDFInfo
- Publication number
- CN116741766B CN116741766B CN202311027310.8A CN202311027310A CN116741766B CN 116741766 B CN116741766 B CN 116741766B CN 202311027310 A CN202311027310 A CN 202311027310A CN 116741766 B CN116741766 B CN 116741766B
- Authority
- CN
- China
- Prior art keywords
- pin
- columns
- column
- semiconductor circuit
- power module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- 238000004806 packaging method and process Methods 0.000 claims abstract description 14
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 36
- 239000000047 product Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000011889 copper foil Substances 0.000 claims description 22
- 239000011265 semifinished product Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 239000003990 capacitor Substances 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000009434 installation Methods 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002969 artificial stone Substances 0.000 claims description 4
- 230000001680 brushing effect Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 238000010330 laser marking Methods 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000011417 postcuring Methods 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- 238000011179 visual inspection Methods 0.000 claims description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 238000001721 transfer moulding Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 239000012752 auxiliary agent Substances 0.000 claims description 2
- 238000004132 cross linking Methods 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The application relates to the technical field of intelligent power modules, and provides a manufacturing method of an intelligent power module device, which comprises the following steps: the semiconductor circuit is arranged on two opposite sides of the air-cooled radiator in a bonding mode, pin columns are arranged on one side of the semiconductor circuit, connecting columns are connected with the pin columns, a plurality of pin column connectors are arranged on the connecting columns, an electric control plate is connected to the tail end of the connecting columns, and a packaging body is used for completely sealing the semiconductor circuit and bonding the air-cooled radiator; the two semiconductor circuits are connected in parallel through a connecting column; the pin column connectors are sleeved on the connecting columns, and the pin columns are arranged in the package body; one end of the pin post is connected with the semiconductor circuit, the other end of the pin post is provided with a built-in pin connector, and the built-in pin connector is sleeved on the connecting post. The intelligent power module device is convenient for realizing superposition and electric control miniaturization of a plurality of semiconductor circuits, and ensures that the electric control arrangement is more flexible and the cost is lower.
Description
Technical Field
The application relates to the technical field of intelligent power modules, in particular to a manufacturing method of an intelligent power module device.
Background
At present, an Intelligent power Module IPM (Intelligent Powr Module) not only integrates a power switch device and a driving circuit, but also is internally provided with fault detection circuits such as overvoltage, overcurrent and overheat, and can send detection signals to a CPU or DSP for interrupt processing. The high-speed low-power-consumption integrated circuit consists of a high-speed low-power-consumption tube core, an optimized gate-level driving circuit and a rapid protection circuit. The IPM itself may not be damaged even if a load accident or misuse occurs. IPM generally uses IGBT as a power switching element, and incorporates an integrated structure of a current sensor and a driving circuit.
The existing IPM semiconductor circuit comprises an IC drive control circuit, an IPM sampling amplifying circuit, a PFC current protection circuit and the like, and is used for arranging an inverter circuit formed by a low-voltage control circuit and a high-voltage power device on the same board, so that the reliability is poor; meanwhile, the existing IPM semiconductor circuits only integrate a single IPM module, the integration of a plurality of IPM semiconductor circuits is not realized, and the requirements on high integration and high heat dissipation technology of the IPM semiconductor circuits are raised against the market miniaturization and low cost competition.
Disclosure of Invention
Aiming at the defects of the related technology, the application provides a manufacturing method of an intelligent power module device, which can realize superposition of a plurality of semiconductor circuits and electric control miniaturization, so that electric control arrangement is more flexible and cost is lower.
In order to solve the above technical problems, an embodiment of the present application provides an intelligent power module device, including: the semiconductor circuit is arranged on two opposite sides of the air-cooled radiator in a bonding mode, pin columns are arranged on one side of the semiconductor circuit, connecting columns connected with the pin columns, a plurality of pin column connectors arranged on the connecting columns, an electric control plate connected to the tail end of the connecting columns, and a packaging body which is used for completely sealing the semiconductor circuit and bonding the air-cooled radiator;
the two semiconductor circuits are connected in parallel through the connecting column; the pin column connectors are sleeved on the connecting columns, and the pin columns are arranged in the package body; one end of the pin post is connected with the semiconductor circuit, the other end of the pin post is provided with a built-in pin connector, and the built-in pin connector is sleeved on the connecting post;
the semiconductor circuit comprises a metal base material attached to one of two opposite sides of the air-cooled radiator, an insulating layer arranged on the metal base material, a copper foil layer arranged on the insulating layer, a protective layer arranged on the copper foil layer, a patch resistor, a patch capacitor, components, a radiating fin and a semi-finished product of the components arranged on the radiating fin at intervals, wherein one end of the pin column is connected with the copper foil layer to realize electric connection;
the chip resistor, the chip capacitor, the component and the component semi-finished product are respectively and electrically connected with the copper foil layer through wires.
Preferably, the inner diameter of the pin post connector is provided with a threaded structure.
Preferably, one end of the built-in pin connector is provided with a thread structure.
Preferably, the pin column is made of copper plates made of C194 or KFC, the copper plates with the thickness of 0.5mm are punched to form a required shape through machining, nickel plating is performed on the surfaces of the copper plates with the thickness of 0.1-0.5um, and then the surfaces of the copper plates are formed with the thickness of 2-5um.
Preferably, the packaging body is formed by taking epoxy resin as matrix resin, taking high-performance phenolic resin as curing agent, adding silicon micropowder as filler and adding powdery molding compound mixed by a plurality of auxiliary agents, extruding the molding compound into a mold cavity by a heat transfer molding method, embedding the semiconductor circuit therein, and simultaneously crosslinking, curing and molding.
In a second aspect, an embodiment of the present application provides a method for manufacturing an intelligent power module device, including the steps of:
s1, placing a metal substrate finished product into a special carrier through automatic equipment or manual operation;
s2, mounting a semiconductor circuit on a component mounting position reserved on the copper foil layer of the metal substrate finished product through brushing solder paste or dispensing silver paste by using automatic die bonding equipment;
s3, mounting the high-voltage power device on a radiating fin with silver plated surface through a soft solder die bonder to form a semi-finished product of the component;
s4, mounting a chip resistor, a chip capacitor and the component semi-finished product on the component mounting position through automatic chip SMT equipment;
s5, connecting the connecting column with the pin column, arranging a plurality of pin column connectors on the connecting column, connecting an electric control board at the tail end of the connecting column, placing the pin column at a pin column installation position through a manipulator or manually, and welding all components on the corresponding installation position through a reflow oven together with the carrier by the whole semi-finished product;
s6, detecting the welding quality of the components through visual inspection AOI equipment;
s7, removing the soldering flux remained on the insulating layer in a spraying and ultrasonic cleaning mode;
s8, respectively and electrically connecting the chip resistor, the chip capacitor, the component and the semi-finished product of the component with the copper foil layer by binding wires;
s9, plastic packaging is carried out on the metal substrate in a specific die through packaging equipment, and then the product is marked through laser marking;
s10, performing post-curing stress relief treatment on the product through a high-temperature oven, and finally performing electrical parameter testing to form a plurality of semiconductor circuits of a final qualified product; attaching an air-cooled radiator between a plurality of the semiconductor circuits;
s11, connecting a plurality of semiconductor circuits in parallel through connecting columns according to the power of an application scene.
Preferably, the carrier is any one of aluminum, synthetic stone, ceramic and PPS.
Compared with the related art, the intelligent power module device has the advantages that the plurality of semiconductor circuits are connected in parallel through the connecting column, so that superposition of the plurality of semiconductor circuits can be realized, electric control is miniaturized, electric control arrangement is more flexible, and cost is lower; meanwhile, the method can be flexibly applied to occasions with various current levels, and the working requirement of larger current can be realized by only increasing the parallel quantity of the semiconductor circuits; the parallel connection process can control a plurality of parallel semiconductor circuits only by an internal control circuit of an electric control board, thereby reducing the production cost and simplifying the procedures and the technology; the built-in structural design of the pins solves the problems of insulating layer layering and glue overflow on the back of the metal substrate, and improves the reliability and heat dissipation performance of the product.
Drawings
The present application will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the application will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
FIG. 1 is a schematic diagram of the overall structure of an intelligent power module device according to the present application;
fig. 2 is a schematic structural diagram of a connector with built-in pins according to the present application
FIG. 3 is a schematic diagram of a pin connector according to the present application;
FIG. 4 is a schematic diagram of an assembly of a pin post connector and a connecting post of the present application;
fig. 5 is a flowchart of a method of manufacturing a smart power module device according to the present application.
Detailed Description
The following describes in detail the embodiments of the present application with reference to the drawings.
The detailed description/examples set forth herein are specific embodiments of the application and are intended to be illustrative and exemplary of the concepts of the application and are not to be construed as limiting the scope of the application. In addition to the embodiments described herein, those skilled in the art will be able to adopt other obvious solutions based on the disclosure of the claims and specification, including any obvious alterations and modifications to the embodiments described herein, all within the scope of the present application.
Example 1
As shown in fig. 1-4, the present application provides an intelligent power module device 100, comprising: the semiconductor device comprises an air-cooled radiator 13, semiconductor circuits 14 attached to two opposite sides of the air-cooled radiator 13, pin posts 10 arranged on one side of the semiconductor circuits 14, connection posts 002 connected with the pin posts 10, a plurality of pin post connectors 001 arranged on the connection posts 002, a circuit board 16 connected to the tail ends of the connection posts 002, and a package 11 which completely seals the semiconductor circuits 14 and is attached to the air-cooled radiator 13.
In this embodiment, the number of the intelligent power module apparatuses 100 is 2, and the 2 intelligent power module apparatuses 100 can be connected in parallel through the connection column 002. Of course, the number of the intelligent power module devices 100 can be 3, 4, 5, etc., and the number is specifically selected according to practical situations.
The air-cooled radiator 13 is used for radiating heat of the semiconductor circuits 14 at two sides, so that the semiconductor circuits 14 have good radiating effect when in operation, and the reliability of the semiconductor circuits 14 is improved.
The two semiconductor circuits 14 are connected in parallel through the connecting column 002; the plurality of pin column connectors 001 are sleeved on the connecting column 002, and the pin columns 10 are arranged in the packaging body 11; one end of the pin post 10 is connected with the semiconductor circuit 14, the other end of the pin post 10 is provided with a built-in pin connector 003, and the built-in pin connector 003 is sleeved on the connecting post 002.
Specifically, the parallel connection mode of the plurality of semiconductor circuits 14 through the connecting column 002 can realize the superposition of the plurality of semiconductor circuits 14, and the electric control is miniaturized, so that the electric control arrangement is more flexible and the cost is lower; meanwhile, the method can be flexibly applied to occasions with various current levels, and the working requirement of larger current can be realized by only increasing the parallel quantity of the semiconductor circuits 14; the parallel process can control a plurality of parallel semiconductor circuits 14 by only one internal control circuit of the circuit board 16, thereby reducing the production cost and simplifying the procedures and processes; the parallel connection method can flexibly change and increase or decrease the semiconductor circuits 14 to adapt to the use scenes of different powers, and when one of the semiconductor circuits 14 fails, only the semiconductor circuits need to be changed without scrapping the whole product, thereby not only reducing the cost, but also improving the rework efficiency. The built-in structure design of the pins solves the problems of layering of the insulating layer 02 and glue overflow on the back of the metal substrate 01, and improves the reliability and heat dissipation performance of products.
The semiconductor circuit 14 comprises a metal substrate 01 attached to one of two opposite sides of the air-cooled radiator 13, an insulating layer 02 arranged on the metal substrate 01, a copper foil layer 03 arranged on the insulating layer 02, a protective layer 04 arranged on the copper foil layer 03, a chip resistor 05, a chip capacitor 06, a component 07, a radiating fin 09 and a semi-finished product 08 arranged on the radiating fin 09, wherein the chip resistor 05, the chip capacitor 06, the component 07 and the radiating fin 09 are arranged on the copper foil layer 03 at intervals, and one end of the pin post 10 is connected with the copper foil layer 03 to realize electric connection; the chip resistor 05, the chip capacitor 06, the component 07, and the component semi-finished product 08 are electrically connected to the copper foil layer 03 through wires 12.
The connection posts 002 are used to connect with the metal substrate 01 and the circuit board 16 as input/output terminals of the semiconductor circuit 14 or to connect with the pin connector 001 to extend the length of the pin 10.
The metal substrate 01 serves as a carrier for the semiconductor circuit 14 and serves as a heat sink for the power device. The insulating layer 02 is used for preventing the risk of short circuit and electric leakage of an internal circuit caused by the electrification of the circuit wiring layer formed by the copper foil layer 03 and the metal base material 01. The copper foil layer 03 is etched to form a desired circuit, and a circuit wiring layer is formed, and the surface mount component 07 is electrically connected to the circuit as a kind of bonding medium (pad). The protective layer 04 is also called a green oil layer, prevents tin from being added in places where tin is not added, increases voltage resistance between circuits, prevents short circuits caused by oxidation or pollution of the circuits, and protects the circuits. The chip resistor 05 is connected to the gate of the IGBT chip in the semiconductor circuit 14, and the effect of limiting the switching speed of the IGBT is achieved through current limiting; the patch capacitor 06 is used for filtering, coupling and bootstrapping in the semiconductor circuit 14; the component 07 is used for forming chips required by functional circuits inside the semiconductor circuit 14; the component semi-finished product 08 is used for attaching the high-voltage power component 07 with high heat dissipation requirement to a small heat sink 09 to form the component semi-finished product 08; the radiating fin 09 adopts a copper surface silver plating process, so that better bonding between the surface component 07 and the radiating fin 09 can be realized, and the radiating capability is improved. The wires 12 are typically made of gold, aluminum, copper, etc., and the wires 12 are used to electrically connect the components 07 inside the circuit.
In this embodiment, the inner diameter of the pin connector 001 is provided with a screw structure. The threaded structure facilitates installation between pin post connector 001 and connection post 002.
In this embodiment, one end of the pin connector 003 is provided with a threaded structure. The threaded structure facilitates installation between the built-in pin connector 003 and the connection post 002.
In this embodiment, the pin column 10 is made of a copper plate made of C194 or KFC, the copper plate with 0.5mm is punched to form a required shape by machining, and then the surface is plated with nickel with a thickness of 0.1-0.5um and then with a thickness of 2-5um.
Specifically, the material of the pin column 10 is C194 (-1/2H) (chemical composition: cu (> 97.0) Fe: 2.4P: 0.03 Zn: 0.12) or KFC (-1/2H) (chemical composition: cu (> 99.6) Fe:0.1 (0.05-0.15) P:0.03 (0.025-0.04)), and a 0.5mm copper plate is punched into a required shape by machining, and then nickel plating thickness is performed on the surface of the plate by 0.1-0.5um and then tin plating thickness is performed by 2-5um.
In this embodiment, the package 11 is made of epoxy resin as matrix resin, high-performance phenolic resin as curing agent, silica powder as filler, and powdery molding compound mixed by adding various additives, and is extruded into a mold cavity by a heat transfer molding method to embed the semiconductor circuit 14 therein, and is cross-linked, cured and molded to form a device with a certain shape.
Example two
As shown in fig. 1 to 5, an embodiment of the present application provides a manufacturing method of an intelligent power module device 100, the manufacturing method including the steps of:
s1, placing a finished product of the metal substrate 01 into a special carrier through automatic equipment or manual operation;
s2, mounting a semiconductor circuit on a component mounting position reserved on the copper foil layer 03 of the finished product of the metal substrate 01 through brushing solder paste or dispensing silver paste by automatic die bonding equipment;
s3, mounting the high-voltage power device on a radiating fin 09 with silver plated surface through a soft solder die bonder to form a semi-finished product 08 of the component;
s4, mounting the chip resistor 05, the chip capacitor 06 and the component semi-finished product 08 on the component mounting position through automatic chip SMT equipment;
s5, connecting the connecting column 002 with the pin column 10, arranging a plurality of pin column connectors 001 on the connecting column 002, connecting an electric control board 16 at the tail end of the connecting column 002, placing the pin column at a pin column installation position through a manipulator or manually, and welding all components 07 on the corresponding installation position through a reflow oven together with a carrier by the whole semi-finished product;
s6, detecting the welding quality of the components 07 through visual inspection AOI equipment;
s7, removing foreign matters of soldering flux and aluminum scraps remained on the insulating layer 02 in a spraying and ultrasonic cleaning mode;
s8, respectively and electrically connecting the chip resistor 05, the chip capacitor 06, the component 07 and the component semi-finished product 08 with the copper foil layer 03 through binding wires 12;
s9, plastic packaging is carried out on the metal substrate 01 in a specific die through packaging equipment, and then the product is marked through laser marking;
s10, performing post-curing stress relief treatment on the product through a high-temperature oven, and finally performing electrical parameter testing to form a plurality of semiconductor circuits 14 of the final qualified product; attaching an air-cooled radiator 13 between the plurality of semiconductor circuits 14;
s11, connecting a plurality of semiconductor circuits 14 in parallel through the connecting column 002 according to the power level of the application scene.
Preferably, the carrier is any one of aluminum, synthetic stone, ceramic and PPS.
Specifically, firstly, a finished metal substrate product is placed into a special carrier (the carrier can be aluminum, synthetic stone, ceramic, PPS and other materials with high temperature resistance of more than 200 ℃) through automatic equipment or manual operation, a component mounting position reserved on a copper foil circuit layer of the finished metal substrate product is pasted on the component mounting position through automatic die bonding equipment (DA machine) through solder paste brushing or silver paste dispensing. And (3) mounting a high-voltage power device (PFC circuit) on the copper radiating fin 09 with silver plated on the surface by a soft solder die bonder to form a semi-finished product 08 of the component. The manufacturing method comprises the steps of mounting a resistor and capacitor on an element mounting position through automatic SMT equipment, placing a pin column 10 on the pin column mounting position through a manipulator or manual operation, welding all elements 07 on corresponding mounting positions through a reflow oven together by the aid of a carrier, detecting welding quality of the elements 07 through visual inspection AOI equipment, removing foreign matters such as soldering flux and aluminum scraps remained on an insulating layer through spraying, ultrasonic and other cleaning modes, enabling circuit elements and circuit wiring to form electric connection through binding wires, marking products through laser marking after plastic packaging (corresponding mounting holes are reserved after plastic packaging) of the substrate circuits through packaging equipment, post-curing and stress removing treatment of the products through a high-temperature oven, and finally forming a final qualified product after electric parameter testing. Finally, a plurality of semiconductor circuits 14 are connected in parallel through the connecting column 002 according to the power level of the application scene.
The beneficial effects of the application are as follows:
the novel manufacturing method of the semiconductor circuit is provided, and the superposition of a plurality of semiconductor circuits can be realized in a parallel connection mode, so that the electronic control is miniaturized, the electronic control arrangement is more flexible, and the cost is lower; the method can be flexibly applied to occasions with various current levels, and the working requirement of larger current can be realized by only increasing the parallel quantity of the semiconductor circuits; the parallel connection method can be flexibly replaced, increased and reduced, so that the parallel connection method not only can adapt to the use scenes of different powers, but also only needs to be replaced when one of the semiconductor circuits fails, and the whole product is not required to be scrapped, thereby not only reducing the cost, but also improving the rework efficiency; the control of a plurality of parallel semiconductor circuits can be completed by only one control circuit through the parallel process, so that the production cost is reduced, and the procedures and the processes are simplified; the semiconductor circuit is designed for a pin built-in structure, so that the layering problem of the insulating layer 02 is solved, and the reliability of a product is improved; the application relates to a semiconductor circuit pin built-in structure design, which solves the problem of glue overflow on the back of a metal substrate.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any such modifications, equivalents, and improvements that fall within the spirit and principles of the present application are intended to be covered by the following claims.
Claims (6)
1. A method of manufacturing an intelligent power module device, comprising: the semiconductor circuit is arranged on two opposite sides of the air-cooled radiator in a bonding mode, pin columns are arranged on one side of the semiconductor circuit, connecting columns connected with the pin columns, a plurality of pin column connectors arranged on the connecting columns, an electric control plate connected to the tail end of the connecting columns, and a packaging body which is used for completely sealing the semiconductor circuit and bonding the air-cooled radiator;
the two semiconductor circuits are connected in parallel through the connecting column; the pin column connectors are sleeved on the connecting columns, and the pin columns are arranged in the package body; one end of the pin post is connected with the semiconductor circuit, the other end of the pin post is provided with a built-in pin connector, and the built-in pin connector is sleeved on the connecting post;
the semiconductor circuit comprises a metal base material attached to one of two opposite sides of the air-cooled radiator, an insulating layer arranged on the metal base material, a copper foil layer arranged on the insulating layer, a protective layer arranged on the copper foil layer, a patch resistor, a patch capacitor, components, a radiating fin and a semi-finished product of the components arranged on the radiating fin at intervals, wherein one end of the pin column is connected with the copper foil layer to realize electric connection;
the chip resistor, the chip capacitor, the component and the component semi-finished product are respectively and electrically connected with the copper foil layer through wires;
the manufacturing method comprises the following steps:
s1, placing a metal substrate finished product into a special carrier through automatic equipment or manual operation;
s2, mounting a semiconductor circuit on a component mounting position reserved on the copper foil layer of the metal substrate finished product through brushing solder paste or dispensing silver paste by using automatic die bonding equipment;
s3, mounting the high-voltage power device on a radiating fin with silver plated surface through a soft solder die bonder to form a semi-finished product of the component;
s4, mounting a chip resistor, a chip capacitor and the component semi-finished product on the component mounting position through automatic chip SMT equipment;
s5, connecting the connecting column with the pin column, arranging a plurality of pin column connectors on the connecting column, connecting an electric control board at the tail end of the connecting column, placing the pin column at a pin column installation position through a manipulator or manually, and welding all components on the corresponding installation position through a reflow oven together with the carrier by the whole semi-finished product;
s6, detecting the welding quality of the components through visual inspection AOI equipment;
s7, removing the soldering flux remained on the insulating layer in a spraying and ultrasonic cleaning mode;
s8, respectively and electrically connecting the chip resistor, the chip capacitor, the component and the semi-finished product of the component with the copper foil layer by binding wires;
s9, plastic packaging is carried out on the metal substrate in a specific die through packaging equipment, and then the product is marked through laser marking;
s10, performing post-curing stress relief treatment on the product through a high-temperature oven, and finally performing electrical parameter testing to form a plurality of semiconductor circuits of a final qualified product; attaching an air-cooled radiator between a plurality of the semiconductor circuits;
s11, connecting a plurality of semiconductor circuits in parallel through connecting columns according to the power of an application scene.
2. The method of manufacturing a smart power module device of claim 1, wherein an inner diameter of the pin post connector is provided with a threaded structure.
3. The method of manufacturing a smart power module apparatus as recited in claim 1, wherein one end of the built-in pin connector is provided with a screw structure.
4. The method of manufacturing an intelligent power module device according to claim 1, wherein the pin column is made of copper plates made of C194 or KFC, the copper plates with the thickness of 0.5mm are punched to form a required shape through machining, nickel plating is performed on the surface of the copper plates with the thickness of 0.1-0.5um, and then the copper plates with the thickness of 2-5um are formed.
5. The method of manufacturing an intelligent power module device according to claim 1, wherein the package is formed by using epoxy resin as a matrix resin, using high-performance phenolic resin as a curing agent, adding silica powder as a filler, adding a powdery molding compound prepared by mixing a plurality of auxiliary agents, extruding the powdery molding compound into a mold cavity by a heat transfer molding method, embedding the semiconductor circuit therein, and simultaneously crosslinking and curing the molding compound.
6. The method of manufacturing a smart power module device according to claim 1, wherein the carrier is any one of aluminum, synthetic stone, ceramic, and PPS.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311027310.8A CN116741766B (en) | 2023-08-16 | 2023-08-16 | Manufacturing method of intelligent power module device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311027310.8A CN116741766B (en) | 2023-08-16 | 2023-08-16 | Manufacturing method of intelligent power module device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116741766A CN116741766A (en) | 2023-09-12 |
| CN116741766B true CN116741766B (en) | 2023-11-21 |
Family
ID=87911879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311027310.8A Active CN116741766B (en) | 2023-08-16 | 2023-08-16 | Manufacturing method of intelligent power module device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116741766B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112490207A (en) * | 2020-12-10 | 2021-03-12 | 上能电气股份有限公司 | Power device heat radiation structure and dc-to-ac converter |
| CN114899161A (en) * | 2022-05-10 | 2022-08-12 | 广东汇芯半导体有限公司 | Module and manufacturing method thereof |
| CN116113221A (en) * | 2023-03-10 | 2023-05-12 | 广东汇芯半导体有限公司 | Refrigerant heat dissipation semiconductor circuit device and manufacturing method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7773381B2 (en) * | 2007-09-26 | 2010-08-10 | Rohm Co., Ltd. | Semiconductor device |
| JP6920790B2 (en) * | 2016-05-24 | 2021-08-18 | ローム株式会社 | How to assemble intelligent power modules, electric or hybrid vehicles, and intelligent power modules |
-
2023
- 2023-08-16 CN CN202311027310.8A patent/CN116741766B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112490207A (en) * | 2020-12-10 | 2021-03-12 | 上能电气股份有限公司 | Power device heat radiation structure and dc-to-ac converter |
| CN114899161A (en) * | 2022-05-10 | 2022-08-12 | 广东汇芯半导体有限公司 | Module and manufacturing method thereof |
| CN116113221A (en) * | 2023-03-10 | 2023-05-12 | 广东汇芯半导体有限公司 | Refrigerant heat dissipation semiconductor circuit device and manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116741766A (en) | 2023-09-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113314515B (en) | Semiconductor circuit and method for manufacturing semiconductor circuit | |
| CN116798973A (en) | Automatic refrigerating and radiating system of semiconductor circuit and manufacturing method | |
| CN116093042A (en) | High-integration polygonal semiconductor circuit module, packaging structure and manufacturing method | |
| CN118016630A (en) | Integrated semiconductor circuit | |
| CN115064510B (en) | Semiconductor circuit module and preparation method thereof | |
| CN116113221A (en) | Refrigerant heat dissipation semiconductor circuit device and manufacturing method | |
| CN116525552A (en) | High-integration semiconductor circuit module and manufacturing method | |
| CN114727484B (en) | Hexagonal semiconductor circuit and manufacturing method thereof | |
| CN113161338A (en) | Intelligent power module and preparation method thereof | |
| CN116741766B (en) | Manufacturing method of intelligent power module device | |
| CN116031230A (en) | Semiconductor lead frame packaging structure and manufacturing method thereof | |
| CN114666975A (en) | Semiconductor circuit structure and manufacturing method thereof | |
| CN216161733U (en) | Semiconductor circuit having a plurality of transistors | |
| CN114664765A (en) | Semiconductor circuit board with good heat dissipation and manufacturing method thereof | |
| CN216413057U (en) | Semiconductor circuit having a plurality of transistors | |
| CN216563126U (en) | Semiconductor circuit with a voltage regulator circuit | |
| CN114666974B (en) | Semiconductor circuit and manufacturing method thereof | |
| CN117040258A (en) | Intelligent power module | |
| CN116779564A (en) | Semiconductor circuit cooling device and manufacturing method | |
| CN114899161A (en) | Module and manufacturing method thereof | |
| CN116798972A (en) | Semiconductor refrigerating system and manufacturing method | |
| CN116864497A (en) | Semiconductor circuit and manufacturing method thereof | |
| CN115397095A (en) | Semiconductor module and manufacturing method thereof | |
| CN114698241B (en) | Semiconductor integrated circuit and manufacturing method thereof | |
| CN113394114A (en) | Chip packaging method, chip and electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |