CN117040258A - Intelligent power module - Google Patents
Intelligent power module Download PDFInfo
- Publication number
- CN117040258A CN117040258A CN202311038911.9A CN202311038911A CN117040258A CN 117040258 A CN117040258 A CN 117040258A CN 202311038911 A CN202311038911 A CN 202311038911A CN 117040258 A CN117040258 A CN 117040258A
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- China
- Prior art keywords
- semiconductor circuit
- pin
- power module
- intelligent power
- semiconductor
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- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 239000011889 copper foil Substances 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims 1
- 239000002671 adjuvant Substances 0.000 claims 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
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- 230000010354 integration Effects 0.000 abstract description 5
- 239000011265 semifinished product Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000047 product Substances 0.000 description 6
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- 238000004806 packaging method and process Methods 0.000 description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
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- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000002969 artificial stone Substances 0.000 description 1
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- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
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- 238000001721 transfer moulding Methods 0.000 description 1
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- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/042—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using temperature dependent resistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/36—Means for starting or stopping converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses an intelligent power module, which comprises a plurality of semiconductor circuit modules, a plurality of pin columns, a plurality of pin column connectors and an electric control board, wherein the semiconductor circuit modules are arranged on the electric control board; the semiconductor circuit module comprises a water-cooling radiator and two semiconductor circuits; the opposite sides of the semiconductor circuit are respectively provided with a substrate connector; two opposite sides of each substrate connector of two semiconductor circuits in the semiconductor circuit module are respectively connected with two oppositely arranged pin columns; two adjacent semiconductor circuits in two adjacent semiconductor circuit modules are connected through the same pin column; two pin posts which are close to each other on two substrate connectors opposite to two semiconductor circuits in the semiconductor circuit module are connected through pin post connectors; the outer pin column on the substrate connector of the outer semiconductor circuit in one outer semiconductor circuit module is connected with the electric control board. The intelligent power module realizes the integration of a plurality of semiconductor circuits, so that the intelligent power module realizes miniaturization and low cost.
Description
Technical Field
The invention relates to the technical field of power modules, in particular to an intelligent power module.
Background
The semiconductor circuit is IPM (Intelligent Powr Module), which not only integrates the power switch device and the driving circuit, but also has built-in fault detection circuits such as overvoltage, overcurrent and overheat, and sends the detection signal to the CPU or DSP for interrupt processing.
The semiconductor circuit is composed of a high-speed low-power-consumption tube core, an optimized gate-level driving circuit and a rapid protection circuit, and can prevent the semiconductor circuit from being damaged even if a load accident or improper use occurs, and the semiconductor circuit generally uses IGBT as a power switch element and is internally provided with an integrated structure of a current sensor and a driving circuit.
In the prior art, the semiconductor circuit needs to arrange an inverter circuit composed of a low-voltage control circuit such as an IC drive control circuit, an IPM sampling amplifying circuit and a PFC current protection circuit and a high-voltage power device on the same board, but the existing semiconductor circuit can only integrate a single IPM module, and the integration of a plurality of IPM semiconductor circuits is not realized, so that the miniaturization and low cost of the semiconductor circuit cannot be realized.
Disclosure of Invention
The invention aims to provide an intelligent power module, which solves the problems that in the prior art, the intelligent power module intelligently integrates a single module, and the integration of a plurality of modules cannot be realized, so that the miniaturization and the low cost cannot be realized.
In order to solve the above problems, the present invention provides an intelligent power module, which includes a plurality of semiconductor circuit modules, a plurality of pin columns, a plurality of pin column connectors, and an electric control board;
the semiconductor circuit module comprises a water-cooling radiator and two semiconductor circuits respectively attached to two opposite sides of the water-cooling radiator; the opposite sides of the semiconductor circuit are respectively provided with a substrate connector;
two opposite sides of each substrate connector of two semiconductor circuits in the semiconductor circuit module are respectively connected with two oppositely arranged pin columns;
two adjacent semiconductor circuits in two adjacent semiconductor circuit modules are connected through the same pin column; two pin posts which are close to each other on two substrate connectors opposite to two semiconductor circuits in the semiconductor circuit module are connected through the pin post connectors; and the pin column on the outer side of the substrate connector of the semiconductor circuit on the outer side in one of the semiconductor circuit modules is connected with the electric control board.
Preferably, both ends of the pin post are respectively provided with an external thread structure; the pin column is connected with the substrate connector or the pin column connector or the electric control board through the external thread structure at the end part of the pin column.
Preferably, the inner diameter of the pin column connector is provided with an internal thread structure; the pin post connector is connected with the external thread structure of the pin post through the internal thread structure.
Preferably, the pin posts are made of copper materials with the material of C194-1/2H or KFC-1/2H.
Preferably, the semiconductor circuit comprises a metal substrate attached to the water-cooling radiator, an insulating layer attached to one side of the metal substrate away from the water-cooling radiator, a copper foil layer attached to one side of the insulating layer away from the metal substrate, a plurality of components attached to the copper foil layer, an insulating medium attached to the periphery of the metal substrate and enabling the metal substrate to be spaced from and insulated from the substrate connector, and a package body covering one side of the substrate connector away from the insulating medium, the copper foil layer and the components.
Preferably, the semiconductor circuit further comprises a protective layer attached to one side of the copper foil layer away from the insulating layer and located at the periphery of the component.
Preferably, the semiconductor circuit further comprises a binding metal wire connected between the two components, and the binding metal wire is made of any one of gold, aluminum and copper.
Preferably, the packaging body is formed by mixing epoxy resin, high-performance phenolic resin, silica micropowder and various auxiliary agents.
Preferably, the components at least comprise chip resistors, chip capacitors and semi-finished products of the components.
Preferably, the semi-finished product of the component comprises a radiating fin attached to one side, away from the insulating layer, of the copper foil layer and a power component attached to one side, away from the copper foil layer, of the radiating fin.
Compared with the prior art, the intelligent power module provided by the invention has the advantages that the substrate connector is arranged on the semiconductor circuit, and the plurality of semiconductor circuits are connected through the plurality of pin posts and the plurality of pin post connectors, so that the parallel connection of the plurality of semiconductor circuits is realized, namely the integration of the plurality of semiconductor circuits is realized, and the miniaturization and the low cost are realized.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a part of a semiconductor circuit in an intelligent power module according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a pin post and a pin post connector in an intelligent power module according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a pin column connector in an intelligent power module according to an embodiment of the present invention.
1, a semiconductor circuit module; 11. a water-cooled radiator; 12. a semiconductor circuit; 121. a substrate connector; 122. a metal substrate; 123. an insulating layer; 124. a copper foil layer; 125. a component; 1251. a chip resistor; 1252. a patch capacitor; 1253. a heat sink; 1254. a power component; 126. an insulating medium; 127. a package; 128. a protective layer; 129. binding metal wires; 2. a pin post; 21. an external thread structure; 3. a pin post connector; 31. an internal thread structure; 4. and an electric control board.
Detailed Description
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention provides an intelligent power module, which is shown in fig. 1 to 4, and comprises a plurality of semiconductor circuit modules 1, a plurality of pin posts 2, a plurality of pin post connectors 3 and an electric control board 4.
The semiconductor circuit module 1 comprises a water-cooling radiator 11 and two semiconductor circuits 12 respectively attached to two opposite sides of the water-cooling radiator 11; opposite sides of the semiconductor circuit 12 are provided with substrate connectors 121, respectively.
Two oppositely arranged pin posts 2 are respectively connected to opposite sides of each substrate connector 121 of two semiconductor circuits 12 in the semiconductor circuit module 1.
Two adjacent semiconductor circuits 12 in two adjacent semiconductor circuit modules 1 are connected through the same pin column 2; two pin posts 2 close to each other on two substrate connectors 121 opposite to two semiconductor circuits 12 in the semiconductor circuit module 1 are connected through pin post connectors 3; the outer pins 2 of the substrate connector 121 of the outer semiconductor circuit 12 in one of the outer semiconductor circuit modules 1 are connected to the electronic control board 4.
The pin 2 is used as an extension of an input or an output in the semiconductor circuit 12; the substrate connector 121 is used for electrically connecting the internal circuit of the semiconductor circuit 12 with the pin post 2; the electric control board 4 is used as a control center of the equipment circuit; the water-cooling radiator 11 is used for radiating heat of two semiconductor circuits 12 connected in parallel in the semiconductor circuit module 1.
Specifically, the pin post 2 is made of copper material with the material of C194-1/2H or KFC-1/2H.
Wherein, C194-1/2H is C194 (-1/2H), and the chemical components are: cu ∈ 97.0%, fe=2.4%, p=0.03%, zn=0.12%; KFC-1/2H is KFC (-1/2H), and the chemical components are as follows: cu > 99.6%, fe=0.05 to 0.15% (preferably 1%), p=0.025 to 0.04% (preferably 0.03%). The copper plate with the thickness of 0.5mm is punched to form a required shape through mechanical processing, and then nickel plating with the thickness of 0.1-0.5um and tin plating with the thickness of 2-5um are firstly carried out on the surface.
Specifically, both ends of the pin post 2 are respectively provided with an external thread structure 21; the pin column 2 is connected with the substrate connector 121 or the pin column connector 3 or the electric control board 4 through the external thread structure 21 at the end part of the pin column; the inner diameter of the pin post connector 3 is provided with an internal thread structure 31; the pin connector 3 is connected to the external thread structure 21 of the pin 2 by the internal thread structure 31. Of course, according to practical requirements, two pins 2 close to each other on the substrate connectors 121 of two adjacent semiconductor circuits 12 in two adjacent semiconductor circuit modules 1 may also be connected by the pin connector 3.
Specifically, the semiconductor circuit 12 includes a metal substrate 122 attached to the water-cooled radiator 11, an insulating layer 123 attached to a side of the metal substrate 122 away from the water-cooled radiator 11, a copper foil layer 124 attached to a side of the insulating layer 123 away from the metal substrate 122, a plurality of components 125 attached to the copper foil layer 124, an insulating medium 126 attached to a periphery of the metal substrate 122 and separating and insulating the metal substrate 122 from the substrate connector 121, and a package 127 covering a side of the substrate connector 121 away from the insulating medium 126, the copper foil layer 124, and the plurality of components 125.
Wherein, the plurality of components 125 at least comprises a chip resistor 1251, a chip capacitor 1252 and a semi-finished product of the components 125; of course, the semiconductor circuit 12 also includes other components 125 required by itself, such as IGBTs, according to actual requirements.
The semi-finished product of the component 125 comprises a radiating fin 1253 attached to one side of the copper foil layer 124 far away from the insulating layer 123, and a power component 1254 attached to one side of the radiating fin 1253 far away from the copper foil layer 124.
The radiating fin 1253 is attached to the power component 1254 by adopting a copper surface silver plating process so as to improve the radiating capacity of the power component 1254; the power component 1254 is a high voltage power component 1254 that requires high heat sink requirements.
The package 127 is formed by mixing epoxy resin, high-performance phenolic resin, silica micropowder and various auxiliary agents; epoxy resin is used as matrix resin, high-performance phenolic resin is used as curing agent, and silica micropowder is used as filler; the package 127 is a powdery molding compound, and is extruded into a cavity by a heat transfer molding method and embeds the semiconductor circuit 12 therein while being cross-linked and cured.
The semiconductor circuit 12 further includes a protective layer 128 attached to a side of the copper foil layer 124 away from the insulating layer 123 and located at a periphery of the component 125; the semiconductor circuit 12 further includes a bonding wire 129 connected between the two components 125, and the bonding wire 129 is made of any one of gold, aluminum and copper.
The semiconductor circuit 12 further includes a bonding wire 129 connected between the two components 125, and the bonding wire 129 is made of any one of gold, aluminum and copper.
The metal substrate 122 serves as a carrier for the semiconductor circuit 12 and plays a role in heat dissipation for the components 125; the insulating layer 123 is used for preventing the risk of short circuit or electric leakage of an internal circuit caused by electrifying the copper foil layer 124 and the metal substrate 122; the copper foil layer 124 is etched to form a desired circuit, i.e., to form a circuit wiring layer, while being a kind of soldering medium (pad) to electrically connect the surface mount component 125 with the circuit; the protective layer 128 is also called a green oil layer, and is used for preventing tin from being added in places where tin is not added, so as to increase the voltage resistance between the circuits, and prevent short circuits caused by oxidation or pollution of the circuits, and protect the circuits; the insulating medium 126 is used to prevent the substrate connector 121 from contacting the metal substrate 122 to cause short-circuiting of the internal circuit; the patch capacitor 1252 is connected to the gate of the IGBT chip in the semiconductor circuit 12, and the effect of limiting the switching speed of the IGBT is achieved through current limiting; the patch capacitor 1252 performs filtering, coupling, and bootstrap functions within the semiconductor circuit 12; other components 125 are used to form the chips required for the internal functional circuits in semiconductor circuit 12.
The preparation method of the intelligent power module in the embodiment comprises the following steps: firstly, placing a finished product of the metal substrate 122 into a special carrier (the carrier can be aluminum, synthetic stone, ceramic, PPS and other materials with high temperature resistance of more than 200 ℃) manually by automatic equipment or manpower; then, reserving component mounting positions on the copper foil layer 124 of the finished product of the metal base material 122, and mounting component 125 inverter circuit chips in the semiconductor circuit 12 on the corresponding component mounting positions through automatic die bonding equipment (DA machine) by brushing solder paste or dispensing silver paste; then a high-voltage power device (PFC circuit) is attached to the radiating fin 1253 with silver plated surface through a soft solder die bonder, so as to form a semi-finished product of the component 125; then mounting the chip resistor 1251, the chip point capacitor and the semi-finished product of the component 125 on corresponding component mounting positions through automatic chip SMT equipment; the entire semi-finished product, including the carrier, is passed through a reflow oven to solder all components 125 to the corresponding mounting locations; detecting the welding quality of the component 125 by visual inspection AOI equipment, removing foreign matters such as soldering flux and aluminum scraps remained on the insulating substrate by cleaning modes such as spraying, ultrasonic and the like, electrically connecting the component 125 with circuit wiring by binding wires, performing plastic packaging on the substrate circuit in a specific die by packaging equipment (corresponding mounting holes are reserved after plastic packaging), and marking a product by laser marking; finally, carrying out post-curing stress relief treatment on the product through a high-temperature oven, and then carrying out electrical parameter testing to form a final qualified product; the plurality of semiconductor circuits 12 are then connected in parallel by the connection columns according to the power level of the application scenario.
The intelligent power module in this embodiment realizes the parallel connection of the plurality of semiconductor circuits 12 by providing the substrate connector 121 on the semiconductor circuit 12 and connecting the plurality of semiconductor circuits 12 through the plurality of pin posts 2 and the plurality of pin post connectors 3, that is, realizes the integration of the plurality of semiconductor circuits 12, and realizes miniaturization and low cost. Meanwhile, the electric control arrangement of the intelligent power module is more flexible, the intelligent power module is suitable for occasions with various current levels, the working requirements of larger current can be realized only by increasing the parallel quantity of the semiconductor circuits 12, and when one of the semiconductor circuits 12 fails, only the semiconductor circuits 12 are required to be replaced, the intelligent power module is not required to be scrapped integrally, so that the maintenance cost is saved, the rework efficiency is reduced, the design of the pin-free structure also solves the layering condition of the insulating layer 123, the reliability of products is improved, and the problem of glue overflow on the back of the metal substrate 122 is solved.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present invention.
Claims (10)
1. An intelligent power module is characterized by comprising a plurality of semiconductor circuit modules, a plurality of pin columns, a plurality of pin column connectors and an electric control board;
the semiconductor circuit module comprises a water-cooling radiator and two semiconductor circuits respectively attached to two opposite sides of the water-cooling radiator; the opposite sides of the semiconductor circuit are respectively provided with a substrate connector;
two opposite sides of each substrate connector of two semiconductor circuits in the semiconductor circuit module are respectively connected with two oppositely arranged pin columns;
two adjacent semiconductor circuits in two adjacent semiconductor circuit modules are connected through the same pin column; two pin posts which are close to each other on two substrate connectors opposite to two semiconductor circuits in the semiconductor circuit module are connected through the pin post connectors; and the pin column on the outer side of the substrate connector of the semiconductor circuit on the outer side in one of the semiconductor circuit modules is connected with the electric control board.
2. The intelligent power module according to claim 1, wherein two ends of the pin post are respectively provided with an external thread structure; the pin column is connected with the substrate connector or the pin column connector or the electric control board through the external thread structure at the end part of the pin column.
3. The intelligent power module according to claim 2, wherein an inner diameter of the pin connector is provided with an internal thread structure; the pin post connector is connected with the external thread structure of the pin post through the internal thread structure.
4. The intelligent power module according to claim 1, wherein the pin posts are made of copper material with a material of C194-1/2H or KFC-1/2H.
5. The intelligent power module according to claim 1, wherein the semiconductor circuit comprises a metal substrate attached to the water-cooled radiator, an insulating layer attached to a side of the metal substrate away from the water-cooled radiator, a copper foil layer attached to a side of the insulating layer away from the metal substrate, a plurality of components attached to the copper foil layer, an insulating medium attached to a periphery of the metal substrate and insulating the metal substrate from the substrate connector, and a package covering a side of the substrate connector away from the insulating medium, the copper foil layer, and the plurality of components.
6. The intelligent power module according to claim 5, wherein the semiconductor circuit further comprises a protective layer attached to a side of the copper foil layer away from the insulating layer and located at a periphery of the component.
7. The intelligent power module according to claim 6, wherein the semiconductor circuit further comprises a binding metal wire connected between the two components, and the binding metal wire is made of any one of gold, aluminum and copper.
8. The intelligent power module according to claim 5, wherein the package is formed from a hybrid arrangement of epoxy, high performance phenolic, silicone powder, and a plurality of adjuvants.
9. The intelligent power module according to claim 5, wherein the plurality of components comprises at least chip resistors, chip capacitors, and component blanks.
10. The intelligent power module according to claim 9, wherein the semi-finished component comprises a heat sink attached to a side of the copper foil layer away from the insulating layer and a power component attached to a side of the heat sink away from the copper foil layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311038911.9A CN117040258A (en) | 2023-08-16 | 2023-08-16 | Intelligent power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311038911.9A CN117040258A (en) | 2023-08-16 | 2023-08-16 | Intelligent power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117040258A true CN117040258A (en) | 2023-11-10 |
Family
ID=88635105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311038911.9A Pending CN117040258A (en) | 2023-08-16 | 2023-08-16 | Intelligent power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117040258A (en) |
-
2023
- 2023-08-16 CN CN202311038911.9A patent/CN117040258A/en active Pending
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