CN118016630A - Integrated semiconductor circuit - Google Patents
Integrated semiconductor circuit Download PDFInfo
- Publication number
- CN118016630A CN118016630A CN202410417269.3A CN202410417269A CN118016630A CN 118016630 A CN118016630 A CN 118016630A CN 202410417269 A CN202410417269 A CN 202410417269A CN 118016630 A CN118016630 A CN 118016630A
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- CN
- China
- Prior art keywords
- circuit board
- semiconductor circuit
- components
- circuit
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000003990 capacitor Substances 0.000 claims description 6
- 230000017525 heat dissipation Effects 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000003466 welding Methods 0.000 abstract description 10
- 238000004806 packaging method and process Methods 0.000 abstract description 6
- 230000003068 static effect Effects 0.000 abstract description 6
- 230000005611 electricity Effects 0.000 abstract description 5
- 239000004033 plastic Substances 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to the technical field of circuits and provides an integrated semiconductor circuit which comprises a circuit board, a semiconductor circuit board embedded in one side of the circuit board with components and electrically connected with the circuit board, and a radiator fixed on one side of the circuit board away from the semiconductor circuit board and arranged opposite to the semiconductor circuit board; the semiconductor circuit comprises an insulating substrate, a plurality of metal totem poles, an insulating layer, a circuit wiring layer and a plurality of components. The integrated semiconductor circuit realizes the integration of the semiconductor circuit board and the circuit board in a pin-free arrangement mode, so that the layering condition of an insulating layer at a pin welding position caused by the stress generated during plastic packaging due to pin welding tolerance due to the connection of two circuit modules through pins is avoided, the influence of human static electricity on an internal chip is avoided, the production cost is reduced, the production efficiency is improved, and in addition, the heat dissipation capacity is improved.
Description
Technical Field
The invention relates to the technical field of circuits, in particular to an integrated semiconductor circuit.
Background
The semiconductor circuit is also called a modularized intelligent power module MIPM (Module Intelligent Power System), which integrates a power switch device and a driving circuit, and also has built-in fault detection circuits such as overvoltage, overcurrent and overheat, and can send detection signals to a CPU or a DSP for interrupt processing. The high-speed low-power-consumption integrated power supply is composed of a high-speed low-power-consumption tube core, an optimized gate-level driving circuit and a rapid protection circuit, and can prevent the IPM from being damaged even if load accidents or improper use occur. It generally uses IGBTs as power switching elements and incorporates an integrated structure of current sensors and drive circuits.
The semiconductor circuit is required to assemble an inverter circuit composed of a low-voltage control circuit such as an IC drive control circuit, an IPM sampling amplifying circuit, a PFC current protection circuit, and the like, and a high-voltage semiconductor circuit on the same circuit board. However, in the prior art, the semiconductor circuit boards are only integrated with a single circuit module, even if a plurality of circuit modules are integrated, the circuit modules are connected only through pins on two circuit modules, and the integrated mode is easy to cause layering of an insulating layer at a pin welding position due to stress generated by pin welding tolerance in plastic packaging, and can cause human static electricity to influence an internal chip (electrostatic breakdown) due to the arrangement of the pins, so that the production efficiency is reduced, in addition, special anti-static packaging is needed for an integrated semiconductor circuit in order to prevent static electricity, and pin purchase and rib cutting equipment is needed for the arrangement of the pins, so that the production cost is higher; meanwhile, as a plurality of circuit modules are integrated, the generated heat is necessarily increased, so that the heat dissipation capacity of the circuit modules is poor.
Disclosure of Invention
The invention provides an integrated semiconductor circuit, which aims to solve the problems that in the prior art, a plurality of circuit modules are integrated in the semiconductor circuit, the insulation layer at a pin welding position is easily layered due to stress generated during plastic packaging due to pin welding tolerance, and the internal chip is influenced by human static due to the arrangement of pins, so that the production cost of the semiconductor circuit is higher, the production efficiency is reduced and the heat dissipation capacity is poor.
The embodiment of the invention provides an integrated semiconductor circuit, which comprises a circuit board, a semiconductor circuit board embedded in one side of the circuit board with components and electrically connected with the circuit board, and a radiator fixed on one side of the circuit board away from the semiconductor circuit board and arranged opposite to the semiconductor circuit board;
The semiconductor circuit board includes:
An insulating substrate;
The metal totem poles respectively penetrate through the insulating substrate, and are arranged at intervals;
The insulating layer is fixed at one end of the metal totem pole and is flush with one side of the insulating substrate;
the circuit wiring layer is fixed on one side of the insulating substrate away from the metal totem pole and one side of the insulating layer away from the metal totem pole;
The components are arranged at one side of the circuit wiring layer far away from the insulating layer at intervals, and are electrically connected with each other; and part of the components are respectively arranged opposite to the plurality of metal totem poles.
Preferably, the area of the radiator attached to the circuit board is larger than the area of the semiconductor circuit board attached to the circuit board.
Preferably, the semiconductor circuit board further includes a package body covering a part of the circuit wiring layer and the plurality of component arrangements.
Preferably, the semiconductor circuit board further comprises a green oil layer which is used for avoiding all the components and arranged on the circuit wiring layer.
Preferably, the plurality of components at least include chip resistors and chip capacitors arranged on the circuit wiring layer at intervals.
Preferably, the semiconductor circuit board further includes a plurality of heat sinks disposed on the circuit wiring layer at intervals, and a part of the components are disposed on the plurality of heat sinks, respectively.
Preferably, the plurality of components and the circuit wiring layer are electrically connected through binding metal wires.
Compared with the prior art, the integrated semiconductor circuit of the invention realizes the integration of the semiconductor circuit board and the circuit board in a pin-free arrangement mode by embedding the semiconductor circuit board into the circuit board, thereby avoiding layering of an insulating layer at a pin welding position caused by stress generated during plastic packaging due to pin welding tolerance by connecting two circuit modules through pins, avoiding the influence of human static electricity on an internal chip, reducing the production cost, improving the production efficiency, and further improving the heat dissipation capacity by fixing a radiator opposite to the semiconductor circuit board on one side of the circuit board far away from the semiconductor circuit board and arranging a metal totem pole which passes through the circuit board and is attached to the radiator.
Drawings
The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
Fig. 1 is a schematic side view of an integrated semiconductor circuit according to an embodiment of the present invention;
Fig. 2 is a cross-sectional view of a semiconductor circuit board in an integrated semiconductor circuit according to an embodiment of the present invention.
10, A circuit board; 20. A semiconductor circuit board; 21. an insulating substrate; 22. an insulating layer; 23. a circuit wiring layer; 24. a component; 241. a chip resistor; 242. a patch capacitor; 25. a package; 26. a green oil layer; 27. a heat sink; 28. binding metal wires; 29. a metal totem pole; 30. a heat sink.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
An embodiment of the present invention provides an integrated semiconductor circuit, as shown in fig. 1 to 2, which includes a circuit board 10, a semiconductor circuit board 20 embedded in one side of the circuit board 10 having a component 24 and electrically connected to the circuit board 10, and a heat sink 30 fixed on one side of the circuit board 10 away from the semiconductor circuit board 20 and disposed opposite to the semiconductor circuit board 20.
The circuit board 10 is capable of connecting a plurality of electronic components together to form a complete circuit, and ensures signal transmission and information communication between the electronic components through precise wiring and soldering techniques.
The semiconductor circuit board 20 is configured such that an inverter circuit composed of a low-voltage control circuit such as an IC drive control circuit, a sampling amplifier circuit, and a PFC current protection circuit and a high-voltage semiconductor circuit is laid out on the same board, and a module is finally formed.
The heat sink 30 plays a role in rapidly radiating heat to the semiconductor circuit.
Specifically, the semiconductor circuit board 20 includes an insulating substrate 21, a plurality of metal totem poles 29, an insulating layer 22, a circuit wiring layer 23, a plurality of components 24, and a package 25.
The metal totem poles 29 are respectively arranged through the insulating substrate 21, and the metal totem poles 29 are arranged at intervals; the insulating layer 22 is fixed at one end of the metal totem pole 29 and is level with one side of the insulating substrate 21; the circuit wiring layer 23 is fixed on one side of the insulating substrate 21 away from the metal totem pole 29, and one side of the insulating layer 22 away from the metal totem pole 29; the plurality of components 24 are arranged at intervals on one side of the circuit wiring layer 23 far away from the insulating layer 22, and the components 24 and the circuit wiring layer 23 are electrically connected with each other; the parts 24 are respectively arranged opposite to a plurality of metal totem poles 29, and one side of the metal totem poles 29 far away from the insulating substrate 21 passes through the circuit board 10 and is attached to the radiator 30; the package 25 covers a part of the circuit wiring layer 23 and the plurality of components 24.
The insulating substrate 21 is composed of glass fiber cloth and epoxy resin, and plays a role in supporting and insulating the components 24, such as an FR4 board; the metal totem pole 29 is composed of a metal material with good heat dissipation performance such as copper, aluminum and the like and an insulating medium, is mainly used as a carrier of the semiconductor circuit board 20 and plays a role in heat dissipation of the semiconductor circuit board 20; the insulating layer 22 is used for preventing the risk of short circuit or electric leakage of an internal circuit caused by electrifying the circuit wiring layer 23 and the metal totem pole 29; the circuit wiring layer 23 is also called a copper foil layer, and a desired circuit is formed by etching; the package 25 is a powder molding compound prepared by mixing epoxy resin as matrix resin, high-performance phenolic resin as curing agent, silica powder and the like as filler, and a plurality of auxiliary agents, and is extruded into a mold cavity by a heat transfer molding method to embed the components 24 therein, and is cross-linked, cured and molded to form the component with a certain shape.
In this embodiment, the semiconductor circuit board 20 further includes a green oil layer 26 that is disposed on the circuit wiring layer 23 so as to avoid all the components 24.
The green layer 26 is also called a protective layer, and is used for preventing tin from being added in places where tin is not added, increasing the voltage resistance between the circuits, and preventing short circuits caused by oxidation or pollution of the circuits, and protecting the circuits.
In the present embodiment, the plurality of components 24 includes at least the chip resistor 241 and the chip capacitor 242 which are provided on the circuit wiring layer 23 at intervals.
The chip resistor 241 is connected to the gate of the IGBT chip in the semiconductor circuit board 20, and the effect of limiting the switching speed of the IGBT is achieved through current limiting; the patch capacitor 242 functions as a filter, a coupling, and a bootstrap within the integrated semiconductor circuit. Of course, the plurality of components 24 also includes chips required to make up the semiconductor circuit board 20 according to actual requirements.
The metal totem pole 29 is not disposed opposite to the chip resistor 241 and the chip capacitor 242, i.e., the number of metal totem poles 29 is smaller than the number of components 24, and the metal totem pole 29 is mainly used for heat dissipation, so that it is required to be disposed opposite to the components 24 with high heat generation.
In this embodiment, the semiconductor circuit board 20 further includes a plurality of heat sinks 27 disposed on the circuit wiring layer 23 at intervals, and a part of the components 24 are disposed on the plurality of heat sinks 27, respectively. The heat sink 27 and the component 24 disposed on the heat sink 27 are referred to as a component semi-finished product, and the component 24 disposed on the heat sink 27 is a high-voltage power component 24 with high heat dissipation requirement.
The heat sink 27 can achieve better adhesion between the component 24 and the heat sink 27 by adopting a copper surface silver plating process, so as to improve heat dissipation capability.
In the present embodiment, electrical connection is achieved between the plurality of components 24 and between the components 24 and the circuit wiring layer 23 by bonding metal wires 28.
The bond wires 28 are typically gold, aluminum, copper, etc. for making electrical connection between the components 24 within the circuit.
In addition, the wiring board 10 includes an insulating substrate, an insulating layer, a circuit wiring layer, a green layer, and the like, and is the same as or similar to the substrate structure of the semiconductor circuit board 20.
Specifically, the area of the heat sink 30 attached to the circuit board 10 is larger than the area of the semiconductor circuit board 20 attached to the circuit board 10, so that the heat dissipation capability of the heat sink 30 to the semiconductor circuit board 20 can be improved.
Compared with the prior art, the integrated semiconductor circuit of the invention realizes the integration of the semiconductor circuit board 20 and the circuit board 10 by embedding the semiconductor circuit board 20 into the circuit board 10 in a pin-free arrangement mode, thereby avoiding layering of the insulating layer 22 at the pin welding position caused by stress generated during plastic packaging due to pin welding tolerance by connecting two circuit modules through pins, avoiding the influence of human static electricity on an internal chip, reducing the production cost and improving the production efficiency, and in addition, fixing the radiator 30 opposite to the semiconductor circuit board 20 on one side of the circuit board 10 far away from the semiconductor circuit board 20, and arranging the metal totem pole 29 which passes through the circuit board 10 and is attached to the radiator 30, thereby improving the heat dissipation capacity.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the embodiments of the present invention have been illustrated and described in connection with the drawings, what is presently considered to be the most practical and preferred embodiments of the invention, it is to be understood that the invention is not limited to the disclosed embodiments, but on the contrary, is intended to cover various equivalent modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (7)
1. An integrated semiconductor circuit is characterized by comprising a circuit board, a semiconductor circuit board embedded in one side of the circuit board with components and electrically connected with the circuit board, and a radiator fixed on one side of the circuit board away from the semiconductor circuit board and arranged opposite to the semiconductor circuit board;
The semiconductor circuit board includes:
An insulating substrate;
The metal totem poles respectively penetrate through the insulating substrate, and are arranged at intervals;
The insulating layer is fixed at one end of the metal totem pole and is flush with one side of the insulating substrate;
the circuit wiring layer is fixed on one side of the insulating substrate away from the metal totem pole and one side of the insulating layer away from the metal totem pole;
The components are arranged at one side of the circuit wiring layer far away from the insulating layer at intervals, and are electrically connected with each other; part of the components are respectively arranged opposite to the metal totem poles;
And one side, far away from the insulating substrate, of the metal totem poles penetrates through the circuit board and is attached to the radiator.
2. The integrated semiconductor circuit of claim 1, wherein an area of the heat sink attached to the circuit board is greater than an area of the semiconductor circuit board attached to the circuit board.
3. The integrated semiconductor circuit of claim 1, wherein the semiconductor circuit board further comprises a package body covering a portion of the circuit routing layer and a plurality of the component arrangements.
4. The integrated semiconductor circuit of claim 1, wherein the semiconductor circuit board further comprises a green oil layer that is recessed from all of the components for placement on the circuit routing layer.
5. The integrated semiconductor circuit of claim 1, wherein the plurality of components includes at least a chip resistor and a chip capacitor disposed on the circuit wiring layer at intervals.
6. The integrated semiconductor circuit of claim 1, wherein the semiconductor circuit board further comprises a plurality of heat sinks disposed on the circuit wiring layer at intervals, a portion of the components being disposed on the plurality of heat sinks, respectively.
7. The integrated semiconductor circuit of claim 1, wherein electrical connection is made between a plurality of said components and between said components and said circuit wiring layer by bonding metal lines.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410417269.3A CN118016630A (en) | 2024-04-09 | 2024-04-09 | Integrated semiconductor circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410417269.3A CN118016630A (en) | 2024-04-09 | 2024-04-09 | Integrated semiconductor circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118016630A true CN118016630A (en) | 2024-05-10 |
Family
ID=90954697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410417269.3A Pending CN118016630A (en) | 2024-04-09 | 2024-04-09 | Integrated semiconductor circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118016630A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5513072A (en) * | 1993-11-18 | 1996-04-30 | Kabushiki Kaisha Toshiba | Power module using IMS as heat spreader |
| CN210226059U (en) * | 2019-05-31 | 2020-03-31 | 广州视源电子科技股份有限公司 | Frequency conversion drive plate and frequency conversion electrical apparatus |
| CN217334063U (en) * | 2022-05-16 | 2022-08-30 | 广东汇芯半导体有限公司 | Semiconductor circuit module |
| CN115064510A (en) * | 2022-06-24 | 2022-09-16 | 广东汇芯半导体有限公司 | Semiconductor circuit module and preparation method thereof |
| CN117219591A (en) * | 2023-10-10 | 2023-12-12 | 广东汇芯半导体有限公司 | Packaging structure of semiconductor circuit |
| CN220417604U (en) * | 2023-07-31 | 2024-01-30 | 佛山市顺德区美的电子科技有限公司 | Control panel, electric control assembly and air conditioner |
-
2024
- 2024-04-09 CN CN202410417269.3A patent/CN118016630A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5513072A (en) * | 1993-11-18 | 1996-04-30 | Kabushiki Kaisha Toshiba | Power module using IMS as heat spreader |
| CN210226059U (en) * | 2019-05-31 | 2020-03-31 | 广州视源电子科技股份有限公司 | Frequency conversion drive plate and frequency conversion electrical apparatus |
| CN217334063U (en) * | 2022-05-16 | 2022-08-30 | 广东汇芯半导体有限公司 | Semiconductor circuit module |
| CN115064510A (en) * | 2022-06-24 | 2022-09-16 | 广东汇芯半导体有限公司 | Semiconductor circuit module and preparation method thereof |
| CN220417604U (en) * | 2023-07-31 | 2024-01-30 | 佛山市顺德区美的电子科技有限公司 | Control panel, electric control assembly and air conditioner |
| CN117219591A (en) * | 2023-10-10 | 2023-12-12 | 广东汇芯半导体有限公司 | Packaging structure of semiconductor circuit |
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