CN217334056U - Semiconductor circuit module - Google Patents
Semiconductor circuit module Download PDFInfo
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- CN217334056U CN217334056U CN202221168033.3U CN202221168033U CN217334056U CN 217334056 U CN217334056 U CN 217334056U CN 202221168033 U CN202221168033 U CN 202221168033U CN 217334056 U CN217334056 U CN 217334056U
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Abstract
The utility model discloses a semiconductor circuit module, include: the metal substrate, two opposite sides are mounting surfaces and heat-dissipating surfaces respectively; an insulating layer disposed on the mounting surface; a circuit wiring layer disposed on the insulating layer; the patch components are arranged on the circuit wiring layer at intervals; a plurality of power components arranged on the circuit wiring layer at intervals; a heat insulation groove formed in a penetrating mode is formed in the position, corresponding to the side face of each power device, of the substrate; a plurality of pins, one end of each pin is electrically connected with the circuit wiring layer; the packaging body is arranged on the side surface of the metal substrate; the radiator is attached to the radiating surface. The utility model discloses the heat radiation that can avoid every power components and parts to produce to the problem of other power components and parts, guaranteed semiconductor circuit module's reliability.
Description
Technical Field
The utility model relates to a semiconductor circuit technical field especially relates to a semiconductor circuit module.
Background
A semiconductor circuit, i.e., a modular Intelligent Power system (mips), which not only integrates a Power switching device and a driving circuit, but also incorporates a fault detection circuit for detecting an overvoltage, an overcurrent, an overheat, etc., and transmits a detection signal to a CPU or a DSP for interrupt processing. The semiconductor circuit mainly comprises a high-speed low-power-consumption tube core, an optimized gate-level driving circuit and a quick protection circuit, and the MIPS can be prevented from being damaged even if a load accident or improper use occurs.
The conventional semiconductor circuit mainly includes a substrate, an insulating layer disposed on the substrate, a circuit wiring layer disposed on the insulating layer, a plurality of components disposed on the circuit wiring layer, a package covering the plurality of components, a heat sink, and the like. In addition, a plurality of components are connected with each other and respectively form a high-voltage power circuit, an upper inverter bridge circuit, a lower inverter bridge circuit, a control drive circuit and the like.
When the integrated structural substrate conducts heat to the components, heat generated by each component can be radiated to other components, and therefore reliability of the semiconductor circuit is affected.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a semiconductor circuit module to the heat that the high heat components and parts produced in solving current semiconductor circuit can radiate to other components and parts on, thereby influences the problem of the reliability of other components and parts.
In order to solve the above problem, the utility model provides a semiconductor circuit module, include:
the two opposite side surfaces of the metal substrate are respectively a mounting surface and a heat dissipation surface;
an insulating layer disposed on the mounting surface;
a circuit wiring layer disposed on the insulating layer;
the patch components are arranged on the circuit wiring layer at intervals;
a plurality of power components arranged on the circuit wiring layer at intervals; the plurality of patch components, the plurality of power components and the patch components and the power components are electrically connected with each other;
the pins are electrically connected with the circuit wiring layer at one ends respectively;
the packaging body is arranged on the side face of the metal substrate and covers the circuit wiring layer, the patch components and the power components, and the other ends of the pins penetrate through the packaging body and are exposed outwards; a heat insulation groove formed in a penetrating mode is formed in the position, corresponding to the side face of each power device, of the substrate;
the radiator is attached to the radiating surface.
Preferably, a fin is arranged in the heat insulation groove, and the fin comprises a heat insulation film located in an intermediate layer.
Preferably, the fin further comprises metal layers positioned on two sides of the heat insulation film and a graphene coating coated on the metal layers.
Preferably, the fins have a thickness of 0.5mm to 2 mm.
Preferably, one end of each fin extends to the outside of the heat insulation groove to form a positioning boss, a positioning groove formed by inwards sinking is formed in the position, corresponding to the positioning boss, of the radiator, and the groove wall of the positioning groove is attached to the positioning boss.
Preferably, the semiconductor circuit module further includes a green oil layer which avoids the patch component, the power component and the pin to be disposed on the circuit wiring layer.
Preferably, a heat sink is disposed between one or more of the power components and the circuit wiring layer.
Preferably, a plurality of the patch components, a plurality of the power components, and the patch components and the power components are electrically connected to each other through bonding metal wires.
Preferably, the binding metal wire is one of a gold wire, an aluminum wire and a copper wire.
Preferably, the circuit wiring layer is a copper foil layer on which a circuit is formed by etching.
Compared with the prior art, the utility model provides a semiconductor circuit module all sets up the heat dam in the position that the base plate corresponds every power device's side to make metal substrate when carrying out heat conduction to power components and parts, can carry out the separation to the heat that every power components and parts produced through the heat dam, with the problem of heat radiation to other power components and parts of avoiding every power components and parts to produce, guaranteed semiconductor circuit module's reliability.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic diagram of an internal structure of a semiconductor circuit module according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a semiconductor circuit module according to an embodiment of the present invention after a heat sink is removed;
fig. 3 is a schematic structural diagram of a heat sink in a semiconductor circuit module according to an embodiment of the present invention;
fig. 4 is a schematic front plan view of a semiconductor circuit module according to an embodiment of the present invention;
fig. 5 is a schematic rear plane structure diagram of a semiconductor circuit module according to an embodiment of the present invention.
100, a semiconductor circuit module; 1. a metal substrate; 2. an insulating layer; 3. a circuit wiring layer; 4. a chip resistor; 5. a chip capacitor; 6. a power component; 7. semi-finished products of components; 71. a heat sink; 8. a pin; 9. a package body; 10. a heat sink; 101. a positioning groove; 11. a fin; 111. positioning the boss; 12. a green oil layer; 13. binding a metal wire; 110. a high voltage power circuit; 120. an inverting upper bridge circuit; 130. an inversion lower bridge circuit; 140. the driving circuit is controlled.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below, and it should be apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
An embodiment of the utility model provides a semiconductor circuit module 100, it is shown in combination fig. 1 to fig. 5, including metal substrate 1, insulating layer 2, circuit wiring layer 3, a plurality of paster components and parts, a plurality of power components and parts 6, a plurality of pin 8, packaging body 9 and radiator 10. Of course, other components or hierarchies may be provided as necessary or unnecessary according to actual requirements.
Wherein, two opposite side surfaces of the metal substrate 1 are respectively a mounting surface and a heat dissipation surface; the insulating layer 2 is arranged on the mounting surface; the circuit wiring layer 3 is provided on the insulating layer 2; the plurality of patch components are arranged on the circuit wiring layer 3 at intervals; a plurality of power components 6 are arranged on the circuit wiring layer 3 at intervals; the multiple chip components, the multiple power components 6 and the chip components and the power components 6 are electrically connected with each other; one ends of the plurality of pins 8 are electrically connected to the circuit wiring layer 3, respectively; the packaging body 9 is arranged on the side face of the metal substrate 1 and covers the circuit wiring layer 3, the plurality of chip components and the plurality of power components 6, and the other ends of the plurality of pins 8 penetrate through the packaging body 9 to be exposed outwards; the heat sink 10 is attached to the heat radiation surface.
The position that the base plate corresponds every power device's side all is provided with the heat-proof slot that runs through the formation, sets up like this and can carry out the separation to the heat that every power components and parts 6 produced to avoid the heat radiation that every power components and parts 6 produced to other power components and parts 6, thereby guarantee semiconductor circuit module 100's reliability.
The metal substrate 1 serves as a carrier of an internal circuit in the semiconductor circuit module 100 and plays a role of heat conduction (heat dissipation) thereto, and may be a gold plate, an aluminum plate, a copper plate, or the like.
The insulating layer 2 is used for insulation to prevent the circuit wiring layer 3 and the metal substrate 1 from conducting electricity to cause short circuit or electric leakage.
The circuit wiring layer 3 serves as a conductive layer for components such as a chip component and a power component 6. In this embodiment, the circuit wiring layer 3 is a copper foil layer for forming a desired circuit by etching, but other types of metal layers, such as an aluminum layer and a gold layer, may be selected according to actual requirements.
In this embodiment, the plurality of chip components include some components that generate lower or less heat, such as the chip resistor 4 and the chip capacitor 5, and of course, according to actual needs, other chip components may also be included. The chip resistor 4 is connected to a grid electrode of an Insulated Gate Bipolar Transistor (IGBT), and the switching speed of the IGBT is limited by limiting current; the patch capacitor 5 may function as a filter, a coupling and a bootstrap.
The plurality of power components 6 constitute chips required for internal functional circuits in the semiconductor circuit module 100, and are mainly components generating high or high heat. In this embodiment, a heat sink 71 is disposed between one or more power components 6 and the circuit wiring layer 3, that is, the power components 6 and the heat sink 71 cooperate to form a component semi-finished product 7, and the heat sink 71 is disposed between a component generating higher or more heat and the circuit wiring layer 3, so as to further improve the heat dissipation capability. The heat sink 71 is attached to the power device 6 by a silver plating process on the surface of a copper material.
The plurality of chip components and the plurality of power components 6 are combined to form a high-voltage power circuit 110, an upper inverter bridge circuit 120, a lower inverter bridge circuit 130, a control drive circuit 140, and the like.
In this embodiment, a plurality of patch components, a plurality of power components 6, and patch components and power components 6 are electrically connected to each other through a bonding metal wire 13, where the metal wire is one of a gold wire, an aluminum wire, and a copper wire.
The chip components, the power components 6 and the pins 8 are also electrically connected with the electrical connection circuit through metal wires.
C194(-1/2H) may be used as the plurality of leads 8, and lamps having a chemical composition of Cu ≧ 97.0%, Fe ═ 2.4%, P ═ 0.03%, and Zn ═ 0.12%; or KFC (-1/2H), the chemical components of Cu ≧ 99.6%, Fe ═ 0.05-0.15%, and P ═ 0.025-0.04%, then the copper plate material of 0.5mm is punched by machining to form the required shape, and the surface is plated with nickel with thickness of 0.1-0.5um and then plated with tin with thickness of 2-5 um.
The package 9 also covers the peripheral walls of the metal substrate 1, the insulating layer 2, and the circuit wiring layer 3; the package 9 is formed by mixing a base resin (epoxy resin), a high-performance phenol resin (curing agent), fine silicon powder (filler), and various additives, and is formed by covering the circuit wiring layer 3, the plurality of chip components, the plurality of power components 6, and the like by mainly pressing the mixture into a cavity by a heat transfer molding method, and simultaneously cross-linking, curing, and molding the mixture.
The heat sink 10 is mainly used for dissipating heat of the entire semiconductor circuit module 100.
In this embodiment, the semiconductor circuit module 100 further includes a green oil layer 12 that avoids the chip component, the power component 6, the pin 8, and the electrical connection line to be disposed on the circuit wiring layer 3.
The green oil layer 12 is also called a protective layer, and is used for preventing tin from being applied to places where tin is not applied, increasing the voltage resistance between circuits, preventing short circuit caused by oxidation or pollution of the circuits, and protecting gas passages of the circuits.
Further, a fin 11 is provided in the heat insulating groove, and the fin 11 includes a heat insulating film in an intermediate layer. The power components 6 can be better insulated through the heat insulation film, so that heat generated by the power components 6 is prevented from radiating to other power components 6.
The fin 11 further includes metal layers located on two sides of the heat insulation film and a graphene coating applied to the metal layers. This arrangement can improve the heat conduction of the fins 11 to improve the heat radiation performance.
The thickness of the fin 11 is 0.5mm to 2mm, and of course, according to actual requirements, the thickness can be adjusted according to the heating condition of the power device, and the corresponding shape can be set according to the layout of the power device.
Furthermore, one end of the fin 11 extends to the outside of the heat insulation slot to form a positioning boss 111, a positioning groove 101 formed by inward recessing is provided at a position of the heat sink 10 corresponding to the positioning boss 111, and a slot wall of the positioning groove 101 is attached to an outer wall of the positioning boss 111. By the arrangement, when the radiating fins 71 are arranged on the metal substrate 1, the effect of accurate positioning is realized, and meanwhile, each power component 6 is accurately radiated, so that the radiating effect is improved.
In this embodiment, the manufacturing method of the semiconductor circuit module 100 includes: firstly, hollowing out a specific position of a metal substrate 1 to form a heat insulation groove; then filling fins 11 into the heat insulation groove; then the insulating layer 2 and the circuit wiring layer 3 are pressed to form a circuit semi-finished product; then pressing the circuit semi-finished product and the metal substrate 1 to form a substrate semi-finished product; then etching the circuit wiring layer 3 to form circuit wiring; then forming a green oil layer 12 on the surface of the circuit wiring; then, the specific surface which is not covered by the green oil layer 12 is subjected to plating treatment to prepare a metal connector; coating adhesive material with fluidity on other specific surfaces which are not covered by the green oil layer 12; welding the power component 6 on the radiating fin 71 to form a component semi-finished product 7; then, the chip component, the power component 6 and the component semi-finished product 7 are configured on the re-bonding material and are subjected to curing treatment; then removing residual solder resist and oxide impurities by cleaning modes such as spraying and ultrasonic cleaning; then, the chip component, the power component 6, the electric connection circuit and the like are connected through the binding metal wire 13 to form electric connection of a circuit, and a pin 8 is installed; and finally, the packaging body 9 covers the circuit wiring layer 3, the chip component, the power component 6 and the like in a plastic packaging mode.
Compared with the prior art, the semiconductor circuit module 100 in the embodiment all sets up the heat-insulating groove in the position that the base plate corresponds the side of every power device, thereby make metal substrate 1 when carrying out heat conduction to power components and parts 6, can carry out the separation to the heat that every power components and parts 6 produced through the heat-insulating groove, with the problem of the heat radiation that avoids every power components and parts 6 to produce to other power components and parts 6, guaranteed the reliability of semiconductor circuit module 100.
The above only is the embodiment of the present invention, not limiting the scope of the present invention, all the equivalent structures or equivalent processes of the present invention are used in the specification and the attached drawings, or directly or indirectly applied to other related technical fields, and the same principle is included in the protection scope of the present invention.
Claims (10)
1. A semiconductor circuit module, comprising:
the metal substrate, two side surfaces opposite to the metal substrate are a mounting surface and a heat dissipation surface respectively;
an insulating layer disposed on the mounting surface;
a circuit wiring layer disposed on the insulating layer;
the patch components are arranged on the circuit wiring layer at intervals;
a plurality of power components arranged on the circuit wiring layer at intervals; the plurality of patch components, the plurality of power components and the patch components and the power components are electrically connected with each other; the substrate is provided with a heat insulation groove which is formed in a penetrating mode at a position corresponding to the side face of each power component;
one end of each of the pins is electrically connected with the circuit wiring layer;
the packaging body is arranged on the side face of the metal substrate and covers the circuit wiring layer, the patch components and the power components, and the other ends of the pins penetrate through the packaging body and are exposed outwards;
the radiator is attached to the radiating surface.
2. The semiconductor circuit module according to claim 1, wherein a fin is provided in the heat insulating groove, and the fin includes a heat insulating film in an intermediate layer.
3. The semiconductor circuit module of claim 2, wherein the fin further comprises a metal layer on both sides of the thermal barrier film and a graphene coating applied to the metal layer.
4. The semiconductor circuit module according to claim 2, wherein the fin has a thickness of 0.5mm to 2 mm.
5. The semiconductor circuit module according to claim 2, wherein one end of the fin extends to the outside of the heat insulation groove to form a positioning boss, the heat sink is provided with a positioning groove formed by being recessed inward at a position corresponding to the positioning boss, and a groove wall of the positioning groove is attached to the positioning boss.
6. The semiconductor circuit module of claim 1, further comprising a layer of green oil that overruns the patch component, the power component, and the pins to be disposed on the circuit wiring layer.
7. The semiconductor circuit module according to claim 1, wherein a heat sink is provided between one or more of the power components and the circuit wiring layer.
8. The semiconductor circuit module according to claim 1, wherein a plurality of the chip components, a plurality of the power components, and the chip components and the power components are electrically connected to each other by bonding wires.
9. The semiconductor circuit module according to claim 8, wherein the bonding metal line is one of a gold line, an aluminum line, and a copper line.
10. The semiconductor circuit module according to claim 1, wherein the circuit wiring layer is a copper foil layer in which a circuit is formed by etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221168033.3U CN217334056U (en) | 2022-05-16 | 2022-05-16 | Semiconductor circuit module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221168033.3U CN217334056U (en) | 2022-05-16 | 2022-05-16 | Semiconductor circuit module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217334056U true CN217334056U (en) | 2022-08-30 |
Family
ID=82953822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221168033.3U Active CN217334056U (en) | 2022-05-16 | 2022-05-16 | Semiconductor circuit module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217334056U (en) |
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2022
- 2022-05-16 CN CN202221168033.3U patent/CN217334056U/en active Active
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