CN116544202A - High-integration superconductive heat semiconductor circuit module and manufacturing method - Google Patents
High-integration superconductive heat semiconductor circuit module and manufacturing method Download PDFInfo
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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Abstract
The invention relates to the technical field of intelligent power modules, and provides a high-integration superconductive heat semiconductor circuit module and a manufacturing method thereof, wherein the high-integration superconductive heat semiconductor circuit module comprises: the semiconductor device comprises a plurality of semiconductor circuits, a metal heat dissipation piece, a heat radiator, a thin film circuit layer and a packaging body, wherein the metal heat dissipation piece, the heat radiator, the thin film circuit layer and the packaging body are correspondingly arranged on one side of each semiconductor circuit; the semiconductor circuit includes: the insulation layer, copper foil layer, green oil layer, a plurality of chips, a plurality of chip resistors, a plurality of chip capacitors and a plurality of wires which are arranged on the copper foil layer; the adjacent copper foil layers are connected through the thin film circuit layer, the tail ends of the metal radiating pieces are oppositely arranged to form an installation space by folding, the packaging body is formed in the installation space in an injection molding mode, the chip is connected with the copper foil layers through wires, and the radiator is fixed on the packaging body and is perpendicular to the installation space. The invention has good heat dissipation effect, strong anti-interference capability, miniaturized structure and improved installation efficiency.
Description
Technical Field
The invention relates to the technical field of intelligent power modules, in particular to a high-integration superconductive heat semiconductor circuit module.
Background
The semiconductor circuit, i.e. the modularized intelligent power system MIPS (Module Intelligent Power System), not only integrates the power switch device and the driving circuit, but also is internally provided with fault detection circuits such as overvoltage, overcurrent, overheat and the like, and can send detection signals to the CPU or the DSP for interrupt processing. The high-speed low-power-consumption integrated circuit consists of a high-speed low-power-consumption tube core, an optimized gate-level driving circuit and a rapid protection circuit. The MIPS itself may not be damaged even if a load accident or misuse occurs. MIPS generally use IGBTs as power switching elements and incorporate an integrated structure of a current sensor and a driving circuit.
The existing MIPS modularized intelligent power system lays out an inverter circuit composed of an IC drive control circuit, a MIPS sampling amplifying circuit, a PFC current protection circuit and other low-voltage control circuits and a high-voltage semiconductor circuit on the same board, meanwhile, the existing MIPS modularized intelligent power system only integrates a single MIPS module, the integration of a plurality of MIPS modularized intelligent power systems is not realized yet, market miniaturization and low cost competition are faced, and higher requirements are put forward for the MIPS modularized intelligent power system high integration and high heat dissipation technology.
However, the high-integration superconductive semiconductor circuit module is troublesome to integrate, has poor refrigerating effect, is inconvenient to install, has a small application range and has poor market competitiveness.
Disclosure of Invention
Aiming at the defects of the related technology, the invention provides the high-integration superconductive heat semiconductor circuit module which is convenient to integrate, good in refrigeration effect and convenient to install.
To solve the above technical problem, in a first aspect, an embodiment of the present invention provides a highly integrated superconducting thermal semiconductor circuit module, including: the semiconductor device comprises a plurality of semiconductor circuits, a metal heat dissipation piece, a heat radiator, a thin film circuit layer and a packaging body, wherein the metal heat dissipation piece, the heat radiator, the thin film circuit layer and the packaging body are correspondingly arranged on one side of each semiconductor circuit;
the semiconductor circuit includes: the insulation layer is arranged on the metal heat dissipation piece, the copper foil layer is arranged on the insulation layer, the green oil layer is arranged on the copper foil layer, the plurality of chips, the plurality of chip resistors, the plurality of chip capacitors and the plurality of wires are arranged on the copper foil layer; adjacent copper foil layers are connected through the thin film circuit layers, a plurality of metal radiating pieces are folded to enable the tail ends of the metal radiating pieces to be arranged oppositely to form an installation space, the packaging body is formed in the installation space in an injection molding mode, the chip is connected with the copper foil layers through the lead wires, and the radiator is fixed on the packaging body and perpendicular to the installation space.
Preferably, the metal heat sink comprises a heat sink body, a groove formed by recessing one side of the heat sink body close to the semiconductor circuit to one side far away from the semiconductor circuit, and a fin formed by protruding one side of the heat sink body far away from the groove, wherein the semiconductor circuit is fixed in the groove.
Preferably, the cross section of the fin is triangular.
Preferably, a plurality of the semiconductor circuits are folded to form any one of a rectangular, triangular, quadrangular, pentagonal, and hexagonal structure.
Preferably, the high-integration superconductive heat semiconductor circuit module further comprises a substrate connecting mechanism, and the substrate connecting mechanism is respectively connected with the plurality of metal heat dissipation pieces.
Preferably, the high-integration superconductive heat semiconductor circuit module further comprises a plurality of pins, one ends of the pins are respectively and electrically connected with the semiconductor circuit, and the other ends of the pins are connected with an external power supply.
Preferably, the high-integration superconductive heat semiconductor circuit module further comprises an electric control plate, wherein the packaging body is penetrated to form a mounting hole, and the packaging body is fixed on the electric control plate through the mounting hole by a screw.
Preferably, the packaging body is formed by taking epoxy resin as matrix resin, taking high-performance phenolic resin as curing agent, adding silicon micropowder as filler and adding powdery molding compound mixed by a plurality of auxiliary agents, extruding the molding compound into a mold cavity by a heat transfer molding method, embedding the semiconductor circuit therein, and simultaneously crosslinking, curing and molding.
Preferably, the plurality of metal radiating pieces include a first metal radiating piece, a second metal radiating piece and a third metal radiating piece, the plurality of copper foil layers include a first copper foil layer, a second copper foil layer and a third copper foil layer, the first metal radiating piece, the second metal radiating piece and the third metal radiating piece are respectively provided with the first copper foil layer, the second copper foil layer and the third copper foil layer, and the thin film circuit layer is respectively electrically connected with the first copper foil layer, the second copper foil layer and the third copper foil layer.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a highly integrated superconducting thermal semiconductor circuit module, the method comprising the steps of:
s1, connecting a plurality of horizontally-arranged metal heat dissipation elements through the thin film circuit layer;
s2, placing a plurality of flat metal heat dissipation part finished products into a special carrier, reserving component mounting positions on the copper foil layer for components on the surfaces of the metal heat dissipation parts, and placing a semiconductor inverter circuit chip of the semiconductor circuit on the component mounting positions through automatic die bonding equipment in a manner of brushing solder paste or dispensing silver paste;
s3, mounting the component semi-finished product, the chip resistor and the chip capacitor on the component mounting position through automatic chip SMT equipment;
s4, placing the lead frames of the pins on corresponding welding positions of a plurality of metal heat dissipation parts through a mechanical arm or manually, and then enabling the whole semi-finished products of the components and the special carrier to pass through a reflow oven together to weld all the components to the corresponding component mounting positions;
s5, detecting the welding quality of the components through visual inspection AOI equipment;
s6, cleaning the scaling powder and oxides remained on the plurality of metal heat dissipation elements in a spraying and ultrasonic cleaning mode;
s7, binding the lead to enable the chip and the copper foil layer to form electric connection, and clockwise folding the first metal radiating piece, the second metal radiating piece and the third metal radiating piece through a substrate connecting mechanism to form a triangular semi-finished product of the semiconductor circuit;
s8, locking one end of the substrate connecting mechanism through a pin column, and placing the triangular semi-finished semiconductor circuit into a packaging mold cavity; packaging the triangular semi-finished semiconductor circuit by packaging equipment;
s9, marking the triangular semi-finished product of the semiconductor circuit through laser marking;
s10, cutting off the connecting ribs and the dummy pins of the pins through rib cutting forming equipment and shaping the pins into required shapes;
s11, performing electrical parameter test through test equipment to obtain a qualified finished product.
Compared with the related art, the semiconductor circuits are electrically connected through the thin film circuit layer; the semiconductor circuits comprise an insulating layer arranged on the metal heat dissipation part, a copper foil layer arranged on the insulating layer, a green oil layer arranged on the copper foil layer, a plurality of chips, a plurality of chip resistors, a plurality of chip capacitors and a plurality of wires which are arranged on the copper foil layer; adjacent copper foil layers are connected through the thin film circuit layers, a plurality of metal radiating pieces are folded to enable the tail ends of the metal radiating pieces to be arranged oppositely to form an installation space, the packaging body is formed in the installation space in an injection molding mode, the chip is connected with the copper foil layers through the lead wires, and the radiator is fixed on the packaging body and perpendicular to the installation space. The metal heat dissipation piece is arranged on one side of the semiconductor circuit and used for peripheral side heat dissipation, and the radiator is arranged on one side of the packaging body and used for dissipating heat to the mounting space, so that side and front heat dissipation of the semiconductor circuit are realized, the heat dissipation performance of the semiconductor circuit is improved, the heat dissipation problem caused by higher specification current and higher integration level can be well solved, and the application is wider. The high-integration electronic control miniaturization requirement can be met, each side of the polygon is provided with a functional circuit, the strong and weak electricity distinction is realized, and the anti-interference capability of the product can be improved. Meanwhile, the high-integration superconductive heat semiconductor circuit module is connected to the electric control board through a plurality of pins. Only one screw is required to be installed to fix the electric control plate, so that the installation efficiency is improved.
Drawings
The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
FIG. 1 is a front view of a highly integrated superconducting thermal semiconductor circuit module of the present invention;
FIG. 2 is a schematic diagram of an assembled structure of a highly integrated superconductive semiconductor circuit module according to the present invention;
FIG. 3 is a top view of a highly integrated superconducting thermal semiconductor circuit module of the present invention;
FIG. 4 is a schematic diagram of a mounting structure of a highly integrated superconductive semiconductor circuit module according to the present invention;
FIG. 5 is a front view of FIG. 4 in accordance with the present invention;
FIG. 6 is a schematic diagram of a finished product structure of the highly integrated superconductive semiconductor circuit module according to the present invention;
FIG. 7 is a schematic diagram of a finished product mounting structure of a highly integrated superconductive semiconductor circuit module according to the present invention;
FIG. 8 is a side view of FIG. 7 in accordance with the present invention;
FIG. 9 is a schematic diagram of a polygonal structure of a highly integrated superconductive semiconductor circuit module according to the present invention;
fig. 10 is a flow chart of a method of fabricating a highly integrated superconducting thermal semiconductor circuit module according to the present invention.
In the figure, 001, metal heat dissipation part, 01, heat dissipation body, 02, groove, 03, fin, 002, insulating layer, 003, copper foil layer, 004, green oil layer, 005, wire, 006, chip, 007, chip resistor, 008, chip capacitor, 1, package, 2, heat dissipation device, 3, mounting hole, 4, thin film circuit layer, 5, pin, 6, substrate connection mechanism, 61, first connecting block, 62, second connecting block, 63, first connecting hole, 64, second connecting hole, 7, semiconductor circuit, 8, first metal heat dissipation part, 9, second metal heat dissipation part, 10, third metal heat dissipation part, 11, electric control board, 12, screw hole.
Detailed Description
The following describes in detail the embodiments of the present invention with reference to the drawings.
The detailed description/examples set forth herein are specific embodiments of the invention and are intended to be illustrative and exemplary of the concepts of the invention and are not to be construed as limiting the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to adopt other obvious solutions based on the disclosure of the claims and specification of the present application, including those adopting any obvious substitutions and modifications to the embodiments described herein, all within the scope of the present invention.
Example 1
As shown in fig. 1 to 9, the present invention provides a highly integrated superconducting thermal semiconductor circuit module, which includes: the semiconductor circuits 7, the metal heat sink 001, the heat sink 2, the thin film circuit layer 4 and the package 1 which are provided on the side of each semiconductor circuit 7 are electrically connected to each other through the thin film circuit layer 4.
The semiconductor circuit 7 includes: the insulating layer 002 on the metal heat dissipation piece 001 is arranged, the copper foil layer 003 is arranged on the insulating layer 002, the green oil layer 004 is arranged on the copper foil layer 003, the plurality of chips 006, the plurality of chip resistors 007, the plurality of chip capacitors 008 and the plurality of wires 005 are arranged on the copper foil layer 003, the adjacent copper foil layers 003 are connected through the thin film circuit layer 4, the plurality of metal heat dissipation pieces 001 are folded to enable the tail ends of the plurality of metal heat dissipation pieces to be oppositely arranged to form an installation space, the packaging body 1 is formed in the installation space in an injection molding mode, the chips 006 are connected with the copper foil layer 003 through the wires 005, and the heat radiator 2 is fixed on the packaging body 1 and perpendicular to the installation space.
The multiple metal heat dissipation parts 001 and the heat sink 2 are used for dissipating heat of the semiconductor circuit 7, the thin film circuit layer 4 is used for realizing electric connection between the multiple metal heat dissipation parts 001, and the package body 1 is used for injection molding of an installation space formed after the multiple semiconductor circuits 7 are folded so as to form the package of the semiconductor circuit 7, so that the fixing effect is good. The semiconductor circuit 7 not only integrates the power switching device and the driving circuit, but also has built-in fault detection circuits such as overvoltage, overcurrent, overheat and the like, and can send detection signals to a CPU (Central Processing Unit, CPU for short) or a DSP (Digital Signal Processing, DSP for short) for interrupt processing.
The metal heat sink 001 may also serve as a carrier for the entire internal circuit of the semiconductor circuit 7 and may serve to dissipate heat from the semiconductor circuit 7. The insulating layer 002 is used for preventing the copper foil layer 003 from being conducted with the metal heat sink 001 to cause short circuit, electric leakage and the like of an internal circuit, and is high in safety. The copper foil layer 003 is etched to form a required circuit, so that the circuit wiring layer is manufactured, and wiring is facilitated. The green oil layer 004 is used for protecting the copper foil layer 003, preventing physical disconnection of the semiconductor circuit 7, preventing short circuit caused by bridging in the welding process, reducing copper pollution to the welding trough, and preventing insulation deterioration and corrosion caused by external environmental factors such as dust, moisture and the like. The wires 005 are typically made of gold, copper, aluminum, or the like, and the wires 005 are used to electrically connect components in the semiconductor circuit 7. The chip 006 is used to realize the switch control of the semiconductor circuit 7, and plays a role of freewheeling. The chip resistor 007 is used for being connected to the gate of the IGBT chip 006 (IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor) in the semiconductor circuit 7, and the effect of limiting the switching speed of the IGBT is achieved through current limiting. The patch capacitor 008 serves as a filter, coupling and bootstrap function within the semiconductor circuit 7. Preferably, filtering generally adopts a filter capacitor, coupling adopts a coupling capacitor, and bootstrapping adopts a bootstrap capacitor.
The radiator 2 can fix and radiate the finished product formed by the whole semiconductor circuit 7, so that the metal radiating piece 001 and the radiator 2 jointly act to realize the full-package radiating function, so that the radiating problem caused by higher specification current and higher integration level can be well solved, and the application is wider.
Specifically, through setting up metal heat dissipation piece 001 in semiconductor circuit 7 one side and being used for the week side to dispel the heat, radiator 2 sets up in package 1 one side and is used for dispelling the heat to the installation space to realize semiconductor circuit 7 side and openly dispel the heat, improve semiconductor circuit 7's heat dispersion, solution that can be fine is higher the specification electric current, and the heat dissipation problem that the integrated level is higher brings, and the application is wider. The high-integration electronic control miniaturization requirement can be met, each side of the polygon is provided with a functional circuit, the strong and weak electricity distinction is realized, and the anti-interference capability of the product can be improved. Meanwhile, the high-integration superconductive heat semiconductor circuit module is connected to the electric control board 11 through a plurality of pins 5. Only one screw is required to be installed to fix the electric control plate 11, so that the installation efficiency is improved.
In the present embodiment, the metal heat sink 001 includes a heat sink body 01, a recess 02 formed by recessing a side of the heat sink body 01 close to the semiconductor circuit 7 toward a side away from the semiconductor circuit 7, and a fin 03 formed by protruding and extending a side of the heat sink body 01 away from the recess 02, the semiconductor circuit 7 being fixed in the recess 02. The radiator body 01 is used for supporting and fixing the semiconductor circuit 7, and the semiconductor is conveniently installed in the groove 02, so that the semiconductor circuit 7 is integrally arranged in the groove 02, and the assembly effect is better. The fins 03 can take away heat through air cooling, so that heat dissipation is realized.
In this embodiment, the cross section of the fin 03 is a triangular structure. The fin 03 with the triangular structure has better heat dissipation effect.
In the present embodiment, the plurality of semiconductor circuits 7 are folded to form any one of structures including a right angle shape, a triangle shape, a quadrangle shape, a pentagon shape, and a hexagon shape.
Wherein a more polygonal higher integrated semiconductor circuit 7 product can be realized by such a multi-circuit substrate metal heat sink 001 manufacturing process. For example, the semiconductor circuit 7 may be a double-substrate rectangular semiconductor circuit 7 of an integrated inverter circuit+a driving circuit+a three-substrate triangular semiconductor circuit 7 of a PFC circuit, may be a four-substrate quadrangular semiconductor circuit 7 of an integrated inverter circuit+a driving circuit+a PFC circuit+a rectifier bridge stack, may be a five-substrate pentagonal double-motor driving semiconductor circuit 7 of an integrated press inverter circuit+a press driving circuit+a fan inverter circuit+a fan driving circuit+a PFC circuit, and may be a six-substrate hexagonal double-motor driving semiconductor circuit 7 of an integrated press inverter circuit+a press driving circuit+a fan inverter circuit+a PFC circuit+a rectifier bridge stack. Each side of the polygon is provided with a functional circuit, so that strong and weak electricity can be distinguished, and the anti-interference capability of the product can be improved. When the product has problems, the problems can be conveniently removed, and failure analysis is convenient to carry out.
In this embodiment, the highly integrated superconductive semiconductor circuit module further includes a substrate connection mechanism 6, and the substrate connection mechanism 6 is respectively connected to the plurality of metal heat dissipation elements 001. This allows the connection of a plurality of metal heat sinks 001 to be achieved, thereby forming a polygonal semiconductor circuit 7 with a better integration effect.
Preferably, the substrate connecting mechanism 6 comprises a first connecting block 61 and two second connecting blocks 62, the first connecting block 61 is provided with a first connecting hole 63, the second connecting block 62 is provided with a second connecting hole 64, and the first connecting hole 63 and the second connecting hole 64 are used for realizing physical connection among a plurality of metal heat dissipation elements 001, so that the fixing effect is good.
In this embodiment, the highly integrated superconducting thermal semiconductor circuit module further includes a plurality of pins 5, one ends of the plurality of pins 5 are electrically connected to the semiconductor circuit 7, respectively, and the other ends of the plurality of pins 5 are connected to an external power source.
The pins 5 are used for realizing electrical connection with the electric control board 11 and limiting the freedom degrees of the semiconductor circuit 7 in the X direction and the Y direction of the electric control board 11. The material adopts C194 (-1/2H) (chemical component: cu (> 97.0) Fe: 2.4P: 0.03 Zn: 0.12) or KFC (-1/2H) (chemical component: cu (> 99.6) Fe:0.1 (0.05-0.15) P:0.03 (0.025-0.04)), a 0.5mm copper plate is punched by machining to form a required shape, nickel plating thickness is performed on the surface of the plate by 0.1-0.5um, and then pins 5 are formed by tinning the plate by 2-5um, and the pins 5 have good conductive effect.
In this embodiment, the highly integrated superconductive semiconductor circuit module further includes an electric control board 11, the package 1 is penetrated to form a mounting hole 3, and the package 1 is fixed on the electric control board 11 through the mounting hole 3 by a screw. This makes it possible to realize the limitation of the degree of freedom of the semiconductor circuit 7 in the Z direction of the electronic control board 11. Screw holes 12 are also formed at two ends of the semiconductor circuit 7, and the semiconductor circuit 7 is fixed on the electric control board 11 through the screw passing through the screw holes 12, so that the installation efficiency of the semiconductor circuit 7 is improved.
Specifically, the metal heat dissipation element 001 and the semiconductor circuit 7 are used as an insert to be mounted on the electric control board 11, then the metal heat dissipation element 001 and the semiconductor circuit 7 are fixed at the mounting hole 3 through screws, and the pins 5 are welded to the electric control board 11 through wave soldering to realize electric connection; the semiconductor circuit 7 is integrated into the radiator by other power devices, so that the semiconductor circuit 7 and other power devices are not required to be supported by a bracket, the semiconductor circuit 7 and other power devices are fixed on the radiator 2 by screws, then the power devices with the radiator 2 are mounted on the electric control board 11 by the bracket, the electric control board 11 and the radiator are fixed by the screws, and the pins 5 are electrically connected with the electric control board 11 by wave soldering, so that the semiconductor circuit 7 is mounted more simply and conveniently.
In this embodiment, the package 1 is formed by using epoxy resin as matrix resin, using high-performance phenolic resin as curing agent, adding silica micropowder as filler, and adding various additives to prepare a powdery molding compound, extruding the powdery molding compound into a mold cavity by a heat transfer molding method, embedding the semiconductor circuit 7 therein, and crosslinking and curing the molding compound.
In this embodiment, the plurality of metal heat dissipation elements 001 includes a first metal heat dissipation element 8, a second metal heat dissipation element 9 and a third metal heat dissipation element 10, the plurality of copper foil layers 003 includes a first copper foil layer 003, a second copper foil layer 003 and a third copper foil layer 003, the first copper foil layer 003, the second copper foil layer 003 and the third copper foil layer 003 are respectively disposed on the first metal heat dissipation element 8, the second metal heat dissipation element 9 and the third metal heat dissipation element 10, and the thin film circuit layer 4 is electrically connected with the first copper foil layer 003, the second copper foil layer 003 and the third copper foil layer 003 respectively.
Example two
As shown in fig. 1 to 10, an embodiment of the present invention provides a method for manufacturing a highly integrated superconducting thermal semiconductor circuit module, the method comprising the steps of:
s1, connecting a plurality of flat metal heat dissipation elements 001 through the thin film circuit layer 4.
S2, placing a plurality of flat metal heat dissipation parts 001 finished products into a special carrier, reserving component mounting positions on a copper foil layer 003 for components on the surfaces of the metal heat dissipation parts 001, and placing a semiconductor inverter circuit chip 006 of a semiconductor circuit 7 on the component mounting positions through automatic die bonding equipment in a manner of brushing tin paste or dispensing silver paste; wherein, the special carrier can be aluminum, synthetic stone, ceramic, PPS and other materials with high temperature resistance of more than 200 ℃.
S3, mounting the semi-finished product of the component, the chip resistor 007 and the chip capacitor 008 on a component mounting position through automatic chip SMT equipment.
S4, placing the lead frame of the pin 5 on corresponding welding positions of the metal heat dissipation parts 001 through a mechanical arm or manually, and then passing the whole semi-finished product of the components and the special carrier through a reflow oven together to weld all the components on the corresponding component mounting positions.
S5, detecting the welding quality of the components through visual inspection AOI equipment; AOI is an automated optical inspection (Automated Optical Inspection) that is a device that detects common defects encountered in welding production based on optical principles.
S6, cleaning the flux and oxides remained on the plurality of metal heat dissipation elements 001 by spraying and ultrasonic cleaning modes.
S7, through binding wires 005, the chip 006 and the copper foil layer 003 are electrically connected, and the first metal heat dissipation piece 8, the second metal heat dissipation piece 9 and the third metal heat dissipation piece 10 are folded clockwise through the substrate connecting mechanism 6 to form a triangular semi-finished product of the semiconductor circuit 7.
S8, locking one end of the substrate connecting mechanism 6 through a pin column, and placing the semi-finished product of the triangular semiconductor circuit 7 into a packaging mold cavity; the triangular semiconductor circuit 7 semi-finished product is packaged by a packaging device.
The folding opening of the substrate connecting mechanism 6 is placed into a pin column to lock the pin column, then the whole semiconductor circuit 7 is placed into a cavity of a packaging mould, the semi-finished product of the semiconductor circuit 7 is subjected to injection molding in a specific mould through packaging equipment, the pin column is automatically taken away by the packaging mould in the injection molding process, and finally the packaging is completed.
And S9, marking the semi-finished product of the triangular semiconductor circuit 7 through laser marking. And post-curing stress relief treatment is not needed to be carried out on the product by a high-temperature oven, so that the manufacturing efficiency is improved.
S10, cutting off and shaping the connecting ribs and the dummy pins of the pins 5 by using rib cutting forming equipment.
S11, performing electrical parameter test through test equipment to obtain a qualified finished product.
The qualified products of the semiconductor circuit 7 prepared by the S1-S11 meet the requirements of different customers on the semiconductor circuits 7 with different integration levels, so that the electronic control design of the customers is more flexible, and the market adaptability of the products is better. The metal heat dissipation piece 001 is arranged on one side of the semiconductor circuit 7 and used for peripheral heat dissipation, and the radiator 2 is arranged on one side of the packaging body 1 and used for dissipating heat to the installation space, so that the side face and the front face of the semiconductor circuit 7 are realized, the heat dissipation performance of the semiconductor circuit 7 is improved, the heat dissipation problem caused by higher specification current and higher integration level can be well solved, and the application is wider. The high-integration electronic control miniaturization requirement can be met, each side of the polygon is provided with a functional circuit, the strong and weak electricity distinction is realized, and the anti-interference capability of the product can be improved. Meanwhile, the high-integration superconductive heat semiconductor circuit module is connected to the electric control board 11 through a plurality of pins 5. Only one screw is required to be installed to fix the electric control plate 11, so that the installation efficiency is improved.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any such modifications, equivalents, and improvements that fall within the spirit and principles of the present invention are intended to be covered by the following claims.
Claims (10)
1. A highly integrated superconducting thermal semiconductor circuit module, the highly integrated superconducting thermal semiconductor circuit module comprising: the semiconductor device comprises a plurality of semiconductor circuits, a metal heat dissipation piece, a heat radiator, a thin film circuit layer and a packaging body, wherein the metal heat dissipation piece, the heat radiator, the thin film circuit layer and the packaging body are correspondingly arranged on one side of each semiconductor circuit;
the semiconductor circuit includes: the insulation layer is arranged on the metal heat dissipation piece, the copper foil layer is arranged on the insulation layer, the green oil layer is arranged on the copper foil layer, the plurality of chips, the plurality of chip resistors, the plurality of chip capacitors and the plurality of wires are arranged on the copper foil layer; adjacent copper foil layers are connected through the thin film circuit layers, a plurality of metal radiating pieces are folded to enable the tail ends of the metal radiating pieces to be arranged oppositely to form an installation space, the packaging body is formed in the installation space in an injection molding mode, the chip is connected with the copper foil layers through the lead wires, and the radiator is fixed on the packaging body and perpendicular to the installation space.
2. The highly integrated superconducting thermal semiconductor circuit module of claim 1 wherein the metal heat sink comprises a heat sink body, a recess formed by recessing a side of the heat sink body adjacent to the semiconductor circuit away from the semiconductor circuit, and a fin formed by protruding an extension of a side of the heat sink body away from the recess, the semiconductor circuit being secured within the recess.
3. The highly integrated superconducting thermal semiconductor circuit module of claim 2 wherein the fins have a triangular cross-section.
4. The highly integrated superconducting thermal semiconductor circuit module of claim 1 wherein a plurality of the semiconductor circuits are folded to form any one of a rectangular, triangular, quadrilateral, pentagonal, and hexagonal configuration.
5. The highly integrated superconducting thermal semiconductor circuit module of claim 1 further comprising a substrate connection mechanism connected to a plurality of the metal heat sinks, respectively.
6. The highly integrated superconducting thermal semiconductor circuit module of claim 1 further comprising a plurality of pins, one ends of the plurality of pins being electrically connected to the semiconductor circuit, respectively, and the other ends of the plurality of pins being connected to an external power source.
7. The highly integrated superconducting thermal semiconductor circuit module of claim 1 further comprising an electrical control board, wherein the package body has mounting holes formed therethrough, and wherein the package body is secured to the electrical control board by screws passing through the mounting holes.
8. The high-integration superconductive semiconductor circuit module according to claim 1, wherein the package is formed by using epoxy resin as matrix resin, high-performance phenolic resin as curing agent, adding silicon micropowder as filler and powdery molding compound mixed by adding various auxiliary agents, extruding the molding compound into a mold cavity by a heat transfer molding method, embedding the semiconductor circuit therein, and simultaneously crosslinking and curing.
9. The highly integrated superconducting thermal semiconductor circuit module of claim 1 wherein the plurality of metal heat sinks includes a first metal heat sink, a second metal heat sink and a third metal heat sink, the plurality of copper foil layers includes a first copper foil layer, a second copper foil layer and a third copper foil layer, the first copper foil layer, the second copper foil layer and the third copper foil layer are respectively provided on the first metal heat sink, the second copper foil layer and the third metal heat sink, and the thin film circuit layer is electrically connected with the first copper foil layer, the second copper foil layer and the third copper foil layer respectively.
10. A method of manufacturing a highly integrated superconducting thermal semiconductor circuit module according to any one of claims 1 to 9, characterized in that the method of manufacturing comprises the steps of:
s1, connecting a plurality of horizontally-arranged metal heat dissipation elements through the thin film circuit layer;
s2, placing a plurality of flat metal heat dissipation part finished products into a special carrier, reserving component mounting positions on the copper foil layer for components on the surfaces of the metal heat dissipation parts, and placing a semiconductor inverter circuit chip of the semiconductor circuit on the component mounting positions through automatic die bonding equipment in a manner of brushing solder paste or dispensing silver paste;
s3, mounting the component semi-finished product, the chip resistor and the chip capacitor on the component mounting position through automatic chip SMT equipment;
s4, placing the lead frames of the pins on corresponding welding positions of a plurality of metal heat dissipation parts through a mechanical arm or manually, and then enabling the whole semi-finished products of the components and the special carrier to pass through a reflow oven together to weld all the components to the corresponding component mounting positions;
s5, detecting the welding quality of the components through visual inspection AOI equipment;
s6, cleaning the scaling powder and oxides remained on the plurality of metal heat dissipation elements in a spraying and ultrasonic cleaning mode;
s7, binding the lead to enable the chip and the copper foil layer to form electric connection, and clockwise folding the first metal radiating piece, the second metal radiating piece and the third metal radiating piece through a substrate connecting mechanism to form a triangular semi-finished product of the semiconductor circuit;
s8, locking one end of the substrate connecting mechanism through a pin column, and placing the triangular semi-finished semiconductor circuit into a packaging mold cavity; packaging the triangular semi-finished semiconductor circuit by packaging equipment;
s9, marking the triangular semi-finished product of the semiconductor circuit through laser marking;
s10, cutting off the connecting ribs and the dummy pins of the pins through rib cutting forming equipment and shaping the pins into required shapes;
s11, performing electrical parameter test through test equipment to obtain a qualified finished product.
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| CN112490234A (en) * | 2020-12-11 | 2021-03-12 | 广东汇芯半导体有限公司 | Intelligent power module and manufacturing method thereof |
| CN116093042A (en) * | 2023-03-10 | 2023-05-09 | 广东汇芯半导体有限公司 | High-integration polygonal semiconductor circuit module, packaging structure and manufacturing method |
| CN116314065A (en) * | 2023-01-06 | 2023-06-23 | 深圳市信展通电子股份有限公司 | Semiconductor package structure including heat spreader and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112490234A (en) * | 2020-12-11 | 2021-03-12 | 广东汇芯半导体有限公司 | Intelligent power module and manufacturing method thereof |
| CN116314065A (en) * | 2023-01-06 | 2023-06-23 | 深圳市信展通电子股份有限公司 | Semiconductor package structure including heat spreader and method of manufacturing the same |
| CN116093042A (en) * | 2023-03-10 | 2023-05-09 | 广东汇芯半导体有限公司 | High-integration polygonal semiconductor circuit module, packaging structure and manufacturing method |
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