CN114698241A - Semiconductor integrated circuit and manufacturing method thereof - Google Patents
Semiconductor integrated circuit and manufacturing method thereof Download PDFInfo
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- CN114698241A CN114698241A CN202210259685.6A CN202210259685A CN114698241A CN 114698241 A CN114698241 A CN 114698241A CN 202210259685 A CN202210259685 A CN 202210259685A CN 114698241 A CN114698241 A CN 114698241A
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0272—Adaptations for fluid transport, e.g. channels, holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/068—Apparatus for etching printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/282—Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to the technical field of electronic circuits, and particularly discloses a semiconductor integrated circuit and a manufacturing method thereof. The invention can reduce the installation area, better radiate heat and solve the heat radiation problem with higher current specification; the structure can realize strong and weak current separation, improve the anti-interference capability of circuit products and meet the high integration requirement of the circuit products.
Description
Technical Field
The present invention relates to the field of electronic circuit technology, and more particularly, to a semiconductor integrated circuit and a method for manufacturing the same.
Background
The semiconductor circuit, namely the modular Intelligent Power system mips (modular Intelligent Power system), not only integrates the Power switch device and the driving circuit, but also embeds fault detection circuits such as overvoltage, overcurrent and overheat, and can send detection signals to a CPU or a DSP for interrupt processing. The high-speed low-power-consumption chip-on-chip protection circuit is composed of a high-speed low-power-consumption chip, an optimized gate-level driving circuit and a quick protection circuit. Even if a load accident occurs or the use is improper, the MIPS can be prevented from being damaged. MIPS generally uses an IGBT as a power switching element, and has an integrated structure in which a current sensor and a driving circuit are incorporated.
The inverter circuit composed of the low-voltage control circuit such as the existing MIPS modular intelligent power system IC drive control circuit, the MIPS sampling amplification circuit, the PFC current protection circuit and the like and the high-voltage semiconductor circuit is arranged on the same board, as shown in figure 1, the existing MIPS modular intelligent power system only integrates a single MIPS module, integration of a plurality of MIPS modular intelligent power systems is not achieved, and higher requirements on high integration and high heat dissipation technologies of the MIPS modular intelligent power system are provided for market miniaturization and low-cost competition.
Disclosure of Invention
The present invention provides a semiconductor integrated circuit and a method for manufacturing the same, which can reduce the mounting area, better dissipate heat, and solve the heat dissipation problem of higher current specification by using a pentagonal circuit substrate as a carrier, each side of which corresponds to a functional circuit; the structure can realize strong and weak current separation, improve the anti-interference capability of the circuit product and realize the high integration requirement of the circuit product.
In order to solve the technical problems, the technical scheme of the invention is as follows:
the utility model provides a semiconductor integrated circuit, includes pentagonal circuit substrate, pentagonal circuit substrate's the outside has set gradually insulating layer, copper foil layer, green oil reservoir, a plurality of functional circuit and packaging body, pentagonal circuit substrate's edge has set gradually a plurality of pin, functional circuit is including PFC circuit, press inverter circuit, rectifier bridge circuit, fan inverter circuit and the drive control circuit that connects gradually, PFC circuit, press inverter circuit, rectifier bridge circuit, fan inverter circuit and drive control circuit all with pin electric connection.
Preferably, the functional circuit is provided with a plurality of chips, a patch resistor and a patch capacitor in a distributed manner, and the chips, the patch resistor and the patch capacitor are electrically connected through a binding metal wire.
Preferably, the pentagonal circuit substrate is provided with a water cooling tank and a screw hole, and the water cooling tank is provided with a cold water pipeline; the screw hole is arranged at the center of the pentagonal circuit substrate, and the water cooling grooves are distributed along the edge of the pentagonal circuit substrate.
Preferably, the PFC circuit is configured to reduce a phase difference between a current and a voltage to improve a power factor; the compressor inverter circuit and the fan inverter circuit are used for converting direct current into alternating current and can work according to logic signals of an IC (integrated circuit); the drive control circuit is used for receiving the logic signal of the MCU and outputting the signal to control the drive power device.
In order to solve the above technical problem, the present invention further provides a method for manufacturing a semiconductor integrated circuit, including the steps of: placing the pentagonal circuit substrate on a carrier by taking the pentagonal circuit substrate as a carrier; sequentially laminating the insulating layer and the copper foil layer on the pentagonal circuit substrate to form a laminated semi-finished product; forming a circuit wiring layer on the copper foil layer by etching; a green oil layer which plays a role in protection is formed on the surface of the circuit wiring layer, and pins which are connected with the circuit wiring layer and extend outwards are formed on the circuit wiring layer; coating an adhesive material on the circuit wiring layer; placing a circuit component on the bonding material; forming electrical connection between the circuit component and the circuit wiring layer by binding metal wires; sealing and fixing the pentagonal circuit substrate and the pins in a plastic packaging mode; at least the connection part of the lead and the circuit wiring layer is sealed by epoxy resin, and at least a part of the lead extending outward is exposed without being sealed by epoxy resin, thereby forming a semiconductor integrated circuit
Preferably, the manufacturing method further includes forming a water cooling groove and a screw hole in the pentagonal circuit substrate.
Preferably, the manufacturing method further comprises marking the semiconductor integrated circuit by a laser marking machine, performing post-curing stress-relief treatment on the semiconductor integrated circuit by a high-temperature oven, and finally performing electrical parameter testing treatment.
Preferably, the circuit component includes a chip, a chip resistor and a chip capacitor, the chip is mounted on the component mounting position corresponding to the circuit wiring layer through an automatic die bonding device, and the chip resistor and the chip capacitor are mounted on the component mounting position corresponding to the circuit wiring layer through an automatic chip mounting technology (SMT) device.
By adopting the technical scheme, the semiconductor integrated circuit and the manufacturing method thereof provided by the invention have the following beneficial effects: the semiconductor integrated circuit is characterized in that an insulating layer, a copper foil layer, a green oil layer, a plurality of functional circuits and a packaging body are sequentially arranged on the outer side of a pentagonal circuit substrate, a plurality of pins are sequentially arranged at the edge of the pentagonal circuit substrate, the functional circuits comprise a PFC circuit, a press inverter circuit, a rectifier bridge stack circuit, a fan inverter circuit and a drive control circuit which are sequentially connected, the PFC circuit, the press inverter circuit, the rectifier bridge stack circuit, the fan inverter circuit and the drive control circuit are electrically connected with the pins, each side of the pentagonal circuit substrate serves as a carrier, and each functional circuit corresponds to one side of the pentagonal circuit substrate, so that the mounting area can be reduced, the heat dissipation problem caused by higher specification current and higher integration level can be well solved, the application is wider, and the heat dissipation can be better carried out; the structure can realize strong and weak current separation, improve the anti-interference capability of circuit products, realize the high integration requirement of the circuit products, can conveniently eliminate the problem when the circuit products have problems, is convenient for failure analysis, and can meet the high integration level electric control miniaturization requirement.
Drawings
FIG. 1 is a three-dimensional schematic view of a conventional semiconductor circuit substrate;
FIG. 2 is a three-dimensional schematic diagram of the internal structure of a semiconductor integrated circuit according to the present invention;
fig. 3 is a front view of the internal structure of the semiconductor integrated circuit in the present invention;
fig. 4 is a cross-sectional view of a semiconductor integrated circuit according to the present invention;
FIG. 5 is a three-dimensional schematic diagram of an external structure of a semiconductor integrated circuit according to the present invention;
fig. 6 is a front view of the external structure of the semiconductor integrated circuit in the present invention.
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
As shown in fig. 2 to 6, the semiconductor integrated circuit includes a pentagonal circuit substrate 2, an insulating layer 001, a copper foil layer 002, a green oil layer 003, a plurality of functional circuits and a package 9 are sequentially disposed on an outer side of the pentagonal circuit substrate 2, a plurality of pins 7 are sequentially disposed on an edge of the pentagonal circuit substrate 2, the functional circuits include a PFC circuit 1, a compressor inverter circuit 3, a rectifier bridge stack circuit 4, a fan inverter circuit 5 and a drive control circuit 6, which are sequentially connected, and the PFC circuit 1, the compressor inverter circuit 3, the rectifier bridge stack circuit 4, the fan inverter circuit 5 and the drive control circuit 6 are all electrically connected to the pins 7. It can be understood that the outer side of the pentagonal circuit substrate 2 is 5 faces, the cross section of the pentagonal circuit substrate can be a regular pentagon, and the PFC circuit 1, the press inverter circuit 3, the rectifier bridge circuit 4, the fan inverter circuit 5 and the drive control circuit 6 are sequentially and correspondingly distributed on the 5 faces of the pentagonal circuit substrate 2.
Specifically, a plurality of chips, chip resistors and chip capacitors are distributed on the functional circuit, and the chips, the chip resistors and the chip capacitors are electrically connected through binding metal wires; the pentagonal circuit substrate is provided with a water cooling tank 201 and a screw hole 202, and the water cooling tank is provided with a cold water pipeline 8; the screw hole is arranged at the center of the pentagonal circuit substrate, and the water cooling grooves are distributed along the edge of the pentagonal circuit substrate; the PFC circuit is used for reducing the phase difference between current and voltage to improve the power factor; the compressor inverter circuit and the fan inverter circuit are used for converting direct current into alternating current and can work according to logic signals of an IC (integrated circuit); the driving control circuit is used for receiving the logic signal of the MCU and outputting the signal to control the driving power device. The base material structure (namely the pentagonal circuit substrate) is designed into a pentagon, each surface of the base material structure is provided with a functional circuit, a water cooling device (namely a water cooling pipeline) can be arranged below each functional circuit to achieve the independent heat dissipation purpose, and meanwhile, a screw mounting hole is reserved in the center of the pentagonal circuit substrate and used for mounting a semiconductor circuit on an electric control board.
Specifically, the internal structure of the semiconductor integrated circuit includes: a PFC circuit 1 for increasing a power factor by reducing a phase difference between a current and a voltage; a PFC circuit chip 101 is formed, on-off control of the circuit is realized, and a follow current effect is achieved; a PFC circuit driving resistor 102 is formed to limit the switching speed of the IGBT; a PFC circuit bonding pad (pad)103 is formed and used for being welded with the pin 7 to realize electric connection with an external circuit; a pentagonal circuit board 2 serving as a carrier of the entire internal circuit of the semiconductor integrated circuit and having a heat dissipation function for the entire semiconductor integrated circuit; a water cooling tank 201 for installing a water cooling pipe; screw holes 202 for mounting the semiconductor integrated circuit on the electronic control board; the insulating layer 001 is used for preventing the risks of short circuit and electric leakage of an internal circuit caused by electrifying the circuit wiring layer and the metal base material; a copper foil layer 002, which is etched to form a desired circuit to form a circuit wiring layer; the green oil layer 003 is mainly used for protecting the copper foil circuit layer, preventing physical disconnection of a conductor circuit, preventing short circuit caused by bridging in a welding process, reducing copper pollution to a welding trough and preventing insulation deterioration and corrosion caused by external environmental factors such as dust, moisture and the like; a binding metal wire 004 (the metal wire is generally made of gold, aluminum, copper and the like) for realizing the electrical connection between components in the circuit; the chip 005 realizes on-off control of the circuit and plays a role of follow current; the chip resistor 006 is connected to the gate of the IGBT chip in the semiconductor circuit and plays a role in limiting the switching speed of the IGBT by current limiting; the patch capacitor 007 plays roles of filtering, coupling and bootstrapping in the semiconductor circuit; the press inverter circuit 3 converts direct current into alternating current and can work according to logic signals of the IC; an inverter circuit chip 301 of the press is formed, so that the on-off control of the circuit is realized, and the follow current effect is realized; a press inverter circuit pad (pad)302 for electrically connecting with an external circuit by welding with a pin; the rectifier bridge rectifier circuit 4 converts sine wave alternating current into steamed bun wave direct current; a rectifier bridge circuit chip 401 is formed, and rectification is realized by using the single-phase conduction characteristic of a diode; a bridge pad 402 for electrically connecting to an external circuit by bonding to a pin; the fan inverter circuit 5 converts direct current into alternating current and can work according to logic signals of the IC; a fan inverter circuit chip 501 is formed, on-off control of the circuit is achieved, and follow current is achieved; a fan inverter circuit pad (pad)502 for being soldered to a pin to electrically connect to an external circuit; the driving control circuit 6 is composed of a press driving control circuit and a fan driving control circuit and is used for receiving the logic signal of the MCU and outputting the signal to control the driving power device; the driving chip 601 controls the driving power device according to the MCU logic signal; a driving control circuit pad (pad)602 for electrically connecting with an external circuit by bonding with a pin; the lead 7 is made of C194(-1/2H) (chemical composition: Cu (97.0): 2.4P: 0.03 Zn: 0.12) or KFC (-1/2H) (chemical composition: Cu (99.6): 0.1 (0.05-0.15) Fe: 0.03 (0.025-0.04)), and is formed into a required shape by punching processing of a 0.5mm copper plate through machining, and then plating nickel with the thickness of 0.1-0.5um on the surface and plating tin with the thickness of 2-5 um; the cold water pipeline 8 realizes the heat dissipation effect by realizing the water circulation in the pipeline; the packaging body 9 is a powder molding compound prepared by mixing epoxy resin as matrix resin, high-performance phenolic resin as curing agent, silicon micropowder and the like as fillers and a plurality of additives, extruding the powder molding compound into a die cavity by a heat transfer molding method, embedding a semiconductor chip in the die cavity, and simultaneously performing cross-linking, curing and molding to form a device with a certain shape structure. In summary, the conventional semiconductor circuit is only composed of a single inverter circuit and a drive control circuit, while the semiconductor integrated circuit of the invention is composed of a rectifier bridge stack circuit, a PFC circuit, a compressor inverter circuit, a fan inverter circuit, a compressor drive control circuit and a fan drive control circuit, and has high integration level and small size specification.
It can be understood that the external structure of the semiconductor integrated circuit of the invention is composed of a packaging body 9, a pentagonal circuit substrate 2, pins 7, a water-cooling pipeline 8, a water-cooling tank 201 and screw holes 202; compared with the external structure, the semiconductor integrated circuit has a pentagonal overall structure, and the conventional semiconductor integrated circuit has a cuboid overall structure which is different; the pins of the semiconductor circuit are distributed from five surfaces to form a pentagonal layout, while the pins of the existing semiconductor circuit are distributed from one surface, and the pin layouts are different; the semiconductor integrated circuit only needs one screw hole for installation, while the existing semiconductor circuit needs two screw holes for installation, and the installation modes are different; the pentagonal circuit board in the semiconductor circuit of the invention has a water cooling tank device, while the existing semiconductor circuit board has no water cooling tank device, and the heat dissipation mode is different.
When the electronic control board is installed and used, the semiconductor integrated circuit is directly installed on the electronic control board as a plug-in unit, then the semiconductor integrated circuit is fixed in the screw hole position through a screw, and the pin is welded on the electronic control board through wave soldering to realize electric connection; the existing semiconductor circuit mounting method is to put a bracket (bracket function: used for supporting the semiconductor circuit and other power devices), fix the semiconductor integrated circuit and other power devices on the radiator through screws, then mount the semiconductor circuit with the radiator on the electric control board through the bracket, fix the electric control board and the radiator through screws, and realize the electrical connection of pins and the electric control board through wave soldering.
It can be understood that the semiconductor integrated circuit heat dissipation method of the invention realizes water-cooling heat dissipation by taking hot water through water circulation; in the conventional semiconductor circuit heat dissipation method, heat is transferred through a radiator and then dissipated through air, so that air cooling heat dissipation is realized. The semiconductor integrated circuit has the following features, including: the pentagonal metal substrate is used as a carrier; an insulating layer disposed intermediate the metal substrate and the copper foil layer; a copper foil layer for forming a circuit wiring layer; pressing the insulating layer and the copper foil layer to form a pressed semi-finished product; laminating the laminated semi-finished product insulation layer surface and the other surface of the metal base material to form a substrate semi-finished product; forming a circuit wiring layer on the surface of the copper foil layer of the substrate semi-finished product; forming a green oil layer serving as a protection function on the circuit wiring layer to form a substrate finished product; a metal pin which is connected with the circuit wiring and is used as input and output and extends outwards; a circuit component disposed at a specific portion of the circuit wiring; a metal wire for electrically connecting the circuit wiring and the circuit component; at least the connection portion of the lead and the circuit wiring is sealed by an epoxy resin, and at least a portion of the lead extending outward is exposed without being sealed by the resin.
It can be understood that the present invention also provides a method for manufacturing a semiconductor integrated circuit, comprising the steps of: placing the pentagonal circuit substrate on a carrier by taking the pentagonal circuit substrate as a carrier; sequentially pressing the insulating layer and the copper foil layer on the pentagonal circuit substrate to form a pressed semi-finished product; forming a circuit wiring layer on the copper foil layer by etching; a green oil layer which plays a role in protection is formed on the surface of the circuit wiring layer, and pins which are connected with the circuit wiring layer and extend outwards are formed on the circuit wiring layer; coating an adhesive material on the circuit wiring layer; placing a circuit component on the adhesive material; forming electrical connection between the circuit component and the circuit wiring layer by binding metal wires; sealing and fixing the pentagonal circuit substrate and the pins in a plastic packaging mode; at least the connection portion of the lead and the circuit wiring layer is sealed with epoxy resin, and at least a portion of the lead extending outward is exposed without being sealed with epoxy resin, thereby forming a semiconductor integrated circuit. The manufacturing method also comprises the steps of forming a water cooling groove and screw holes on the pentagonal circuit substrate; the manufacturing method also comprises the steps of marking the semiconductor integrated circuit by a laser marking machine, carrying out post-curing stress-removing treatment on the semiconductor integrated circuit by a high-temperature oven, and finally carrying out electrical parameter test treatment; the circuit component comprises a chip, a chip resistor and a chip capacitor, wherein the chip is mounted on a component mounting position corresponding to the circuit wiring layer through automatic crystal bonding equipment, and the chip resistor and the chip capacitor are mounted on the component mounting position corresponding to the circuit wiring layer through automatic chip mounting technology (SMT) equipment.
Specifically, the semiconductor integrated circuit manufacturing method explains: putting a pentagonal metal substrate finished product into a special carrier (the carrier can be made of materials with the temperature resistance of more than 200 ℃ such as aluminum, synthetic stone, ceramics, PPS and the like), brushing tin paste or silver paste on component mounting positions reserved on five surface copper foil circuit layers of the pentagonal circuit substrate respectively, mounting a semiconductor inverter circuit chip on the component mounting positions through automatic crystal sticking equipment (DA machine), mounting semi-finished components, chip resistors and chip capacitors on the component mounting positions through automatic SMT equipment, placing a lead frame on the corresponding welding positions of the pentagonal circuit substrate through a mechanical arm or manpower, then welding all the components on the corresponding mounting positions through a reflow oven by the whole semi-finished product including the carrier together, detecting the welding quality of the components through visual inspection AOI equipment, and removing scaling powder, oxidation and other pollutants remained on the substrate through cleaning modes such as spraying, ultrasonic and the like, the circuit element and the circuit wiring are electrically connected through the binding line, the substrate circuit is packaged in a specific die through packaging equipment, then the product is marked through laser marking, post-curing stress removal treatment is carried out on the product through a high-temperature oven, and finally a final qualified product is formed after electrical parameter testing.
It is understood that the method for manufacturing a semiconductor circuit of the present invention has the following features including: a pentagonal metal substrate is used as a carrier; arranging a copper foil layer on the surface of each side of the metal substrate; forming a circuit wiring on the metal base copper foil by etching; forming a line protection green oil layer on the surface of the circuit wiring; a step of forming a plating layer on the surface of the metal copper material of the specific shape, which is not covered by the green oil layer, to manufacture a metal connector; a step of forming a plating layer on the surface of a metal copper material with a specific shape to prepare a pin; coating an adhesive material having a predetermined fluidity on a predetermined position of the circuit wiring; welding a chip on the surface of the metal radiating fin; placing a circuit element on the adhesive material; curing the adhesive material; cleaning the scaling powder, aluminum scraps and other pollutants remained on the metal aluminum substrate by adopting cleaning modes such as spraying, ultrasonic and the like; forming electrical connection between the circuit component and the circuit wiring through the binding wire; sealing and fixing the metal substrate and the pins in a plastic package mode, so that the specific position of the circuit wiring with a specific potential is not filled with the resin; testing necessary electrical parameters and appearance parameters by testing equipment; a step of mounting a cooling water pipe to the semiconductor circuit; the semiconductor integrated circuit of the present invention is manufactured after the water pipe is mounted.
The invention has the advantages of reasonable design, unique structure, wide application, capability of well solving the heat dissipation problem caused by higher specification current and higher integration level; the requirement of high integration degree electric control miniaturization can be met; each side of the pentagonal circuit substrate is provided with a functional circuit, so that strong and weak current distinguishing is realized, the anti-interference capability of a circuit product can be improved, and when the circuit product has a problem, the problem can be conveniently eliminated, and failure analysis is convenient to perform; the fixing with the electric control board can be realized only by installing one screw, and the installation efficiency is improved.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. It will be apparent to those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, and the scope of protection is still within the scope of the invention.
Claims (8)
1. A semiconductor integrated circuit, characterized in that: including pentagonal circuit substrate, pentagonal circuit substrate's the outside has set gradually insulating layer, copper foil layer, green oil reservoir, a plurality of functional circuit and packaging body, pentagonal circuit substrate's edge has set gradually a plurality of pin, functional circuit is including PFC circuit, press inverter circuit, rectifier bridge pile circuit, fan inverter circuit and the drive control circuit that connects gradually, PFC circuit, press inverter circuit, rectifier bridge pile circuit, fan inverter circuit and drive control circuit all with pin electric connection.
2. The semiconductor integrated circuit according to claim 1, wherein: the functional circuit is provided with a plurality of chips, a patch resistor and a patch capacitor in a distributed mode, and the chips, the patch resistor and the patch capacitor are electrically connected through binding metal wires.
3. The semiconductor integrated circuit according to claim 1, wherein: the pentagonal circuit substrate is provided with a water cooling tank and a screw hole, and the water cooling tank is provided with a cold water pipeline; the screw hole is arranged at the center of the pentagonal circuit substrate, and the water cooling grooves are distributed along the edge of the pentagonal circuit substrate.
4. The semiconductor integrated circuit according to claim 1, wherein: the PFC circuit is used for reducing the phase difference between the current and the voltage to improve the power factor; the compressor inverter circuit and the fan inverter circuit are used for converting direct current into alternating current and can work according to logic signals of an IC (integrated circuit); the rectifier bridge stack circuit is used for converting sine wave alternating current into steamed bread wave direct current; the drive control circuit is used for receiving the logic signal of the MCU and outputting the signal to control the drive power device.
5. A method for manufacturing a semiconductor integrated circuit according to any one of claims 1 to 4, wherein: the method comprises the following steps: placing the pentagonal circuit substrate on a carrier by taking the pentagonal circuit substrate as a carrier; sequentially pressing the insulating layer and the copper foil layer on the pentagonal circuit substrate to form a pressed semi-finished product; forming a circuit wiring layer on the copper foil layer by etching; a green oil layer which plays a role in protection is formed on the surface of the circuit wiring layer, and pins which are connected with the circuit wiring layer and extend outwards are formed on the circuit wiring layer; coating an adhesive material on the circuit wiring layer; placing a circuit component on the bonding material; forming electrical connection between the circuit component and the circuit wiring layer by binding metal wires; sealing and fixing the pentagonal circuit substrate and the pins in a plastic packaging mode; at least the connection portion of the lead and the circuit wiring layer is sealed with epoxy resin, and at least a portion of the lead extending outward is exposed without being sealed with epoxy resin, thereby forming a semiconductor integrated circuit.
6. The method of manufacturing a semiconductor integrated circuit according to claim 5, wherein: the pentagonal circuit substrate is also provided with a water cooling groove and a screw hole.
7. The method of manufacturing a semiconductor integrated circuit according to claim 5, wherein: the method further comprises the steps of marking the semiconductor integrated circuit through a laser marking machine, carrying out post-curing stress-removing treatment on the semiconductor integrated circuit through a high-temperature oven, and finally carrying out electrical parameter testing treatment.
8. The method of manufacturing a semiconductor integrated circuit according to claim 5, wherein: the circuit components comprise chips, chip resistors and chip capacitors, the chips are mounted on the component mounting positions corresponding to the circuit wiring layer through automatic crystal bonding equipment, and the chip resistors and the chip capacitors are mounted on the component mounting positions corresponding to the circuit wiring layer through automatic chip SMT equipment.
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| CN202210259685.6A CN114698241B (en) | 2022-03-16 | 2022-03-16 | Semiconductor integrated circuit and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210259685.6A CN114698241B (en) | 2022-03-16 | 2022-03-16 | Semiconductor integrated circuit and manufacturing method thereof |
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| CN114698241B CN114698241B (en) | 2024-07-23 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19509441A1 (en) * | 1994-03-16 | 1995-09-28 | Hitachi Ltd | Hybrid integrated circuit |
| DE10350913A1 (en) * | 2003-10-31 | 2005-06-02 | Osram Opto Semiconductors Gmbh | Light-emitting diode arrangement for a rotating warning light comprises a spatial arrangement of diodes, a support having rigid assembly regions and connecting regions arranged between the assembly regions, and a flexible circuit board |
| CN203279343U (en) * | 2013-06-07 | 2013-11-06 | 深圳市恒瑞灵机电有限公司 | Electric apparatus with heat dissipation function |
| CN109300890A (en) * | 2018-08-31 | 2019-02-01 | 华中科技大学 | One kind can recombinate polyhedron circuit structure and its conformal spray printing manufacturing method |
| CN208836439U (en) * | 2018-08-16 | 2019-05-07 | 昆山金鹏电子有限公司 | High-accuracy fine and closely woven circuit board |
-
2022
- 2022-03-16 CN CN202210259685.6A patent/CN114698241B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19509441A1 (en) * | 1994-03-16 | 1995-09-28 | Hitachi Ltd | Hybrid integrated circuit |
| DE10350913A1 (en) * | 2003-10-31 | 2005-06-02 | Osram Opto Semiconductors Gmbh | Light-emitting diode arrangement for a rotating warning light comprises a spatial arrangement of diodes, a support having rigid assembly regions and connecting regions arranged between the assembly regions, and a flexible circuit board |
| CN203279343U (en) * | 2013-06-07 | 2013-11-06 | 深圳市恒瑞灵机电有限公司 | Electric apparatus with heat dissipation function |
| CN208836439U (en) * | 2018-08-16 | 2019-05-07 | 昆山金鹏电子有限公司 | High-accuracy fine and closely woven circuit board |
| CN109300890A (en) * | 2018-08-31 | 2019-02-01 | 华中科技大学 | One kind can recombinate polyhedron circuit structure and its conformal spray printing manufacturing method |
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| Publication number | Publication date |
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| CN114698241B (en) | 2024-07-23 |
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