CN217719583U - Half-bridge diode integrated device, power module and frequency converter - Google Patents
Half-bridge diode integrated device, power module and frequency converter Download PDFInfo
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- CN217719583U CN217719583U CN202221652123.XU CN202221652123U CN217719583U CN 217719583 U CN217719583 U CN 217719583U CN 202221652123 U CN202221652123 U CN 202221652123U CN 217719583 U CN217719583 U CN 217719583U
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Abstract
The utility model discloses a half-bridge diode integrated device, power module and converter, half-bridge diode integrated device include base plate, N type diode chip and P type diode chip. The substrate has a first plane. The anode of the P-type diode chip is welded on the first plane. One end of the first pin is arranged on the first plane and is electrically connected with the anode of the N-type diode. One end of the second pin is arranged on the first plane and is electrically connected with the cathode of the P-type diode. The utility model discloses a half-bridge diode integrated device constitutes a half-bridge circuit through integrated N type diode chip and P type diode chip, can replace flat bridge and the square bridge that needs more artifical participation equipment. The welding assembly has higher automation degree and great advantage in comprehensive cost, and can be reflow-welded together with components on the PCB, thereby greatly improving the automatic production efficiency.
Description
Technical Field
The utility model relates to a discrete device, concretely relates to half-bridge diode integrated device, power module and converter.
Background
The power module scheme of the power driving system of the frequency converter and the servo 220V, 380V and 480V voltage grades generally adopts the following scheme:
1. the integrated module customization scheme integrates current sampling, driving and the like into a power module, and the integrated module customization scheme also has the problems of high module cost, long production period and the like.
2. The Power Integrated Module (PIM) scheme integrates a rectifier bridge, a brake link and an inverter bridge into the same PIM Module, a main loop is electrically interconnected mainly in a bonding wire mode, and an internal Power chip is welded on a ceramic copper-clad substrate. The scheme has the advantages of high module integration level, good module protection, universal packaging, high module cost, longer production period, no contribution to improving the production efficiency and higher module cost for a low-power driver.
3. The discrete device is packaged, the same module effect is achieved through materials and processes such as the ceramic substrate, the aluminum substrate or the heat conduction insulating die, the device is low in cost and high in flexibility, but the thermal resistance of the materials such as the ceramic substrate or the heat conduction insulating die is high, the model selection specification of the device is limited, the production process is complex, and the assembly cost is high. Most discrete devices are used in a formula bridge and a flat bridge at present, but the automation degree of the production of the rectifier bridges of the flat bridge and the square bridge is low, the number of artificial factors is large, and the stable production is not facilitated.
SUMMERY OF THE UTILITY MODEL
The utility model mainly aims at providing a half-bridge diode integrated device, power module and converter aims at improving welding assembly degree of automation.
In order to achieve the above object, the utility model provides a half-bridge diode integrated device, half-bridge diode integrated device includes:
a substrate having a first plane;
the cathode of the N-type diode chip is welded on the first plane;
the anode of the P-type diode chip is welded on the first plane;
one end of the first pin is arranged on the first plane and is electrically connected with the anode of the N-type diode;
and one end of the second pin is arranged on the first plane and is electrically connected with the cathode of the P-type diode.
In one embodiment, the substrate has a second plane disposed opposite the first plane, the second plane being configured to abut the thermally conductive insulator.
In an embodiment, the half-bridge diode integrated device further includes a third pin, and the third pin is disposed on the second plane of the substrate;
the substrate comprises a wiring layer, and the third pin is electrically connected with the anode of the N-type diode chip and the cathode of the P-type diode through the wiring layer.
In one embodiment, the half-bridge diode integrated device further comprises a housing, and the housing cover is arranged on the first plane of the substrate.
In an embodiment, the other end of the first pin extends along a direction away from the first plane and is bent towards the housing to form a first welding pin; the other end of the second pin extends along the direction far away from the first plane and bends towards the direction of the shell to form a second welding pin.
In one embodiment, one end of the first pin, which is far away from the substrate, extends out of the shell;
one end of the second pin, which is far away from the substrate, extends out of the shell.
The utility model also provides a power module, power module includes power component, power component includes: the brake unit, the inverter unit and the rectification unit are sequentially connected in series; wherein the content of the first and second substances,
the rectifying unit comprises a plurality of half-bridge diode integrated devices.
In one embodiment, the power module further comprises:
the power module is arranged on a first side of the heat conduction insulating substrate;
the radiator is abutted against the second side of the heat-conducting insulating substrate and used for radiating heat for the power module; wherein the second side of the thermally conductive insulating substrate is disposed opposite the first side;
and a plurality of groups of electrode terminal groups are arranged on the heat-conducting insulating substrate corresponding to the half-bridge diode integrated devices, and each group of electrode terminal group comprises three electrode terminals.
In one embodiment, the power module further comprises:
a drive plate on which the power components are arranged;
the heat conduction insulating piece is provided with a first side and a second side which are oppositely arranged, the first side of the heat conduction insulating piece is abutted against the power assembly, and the second side of the heat conduction insulating piece is abutted against the radiator;
the radiator is fixedly connected with the driving plate. The heat-conducting insulating piece and the power assembly are clamped between the heat radiator and the driving board.
The utility model also provides a frequency converter, which comprises the half-bridge diode integrated device;
and/or, include the power module described above.
The utility model discloses a half-bridge diode integrated device constitutes a half-bridge circuit through integrated N type diode chip and P type diode chip, can replace flat bridge and the square bridge that needs more artifical participation equipment. By arranging the third pin on a plane opposite to the first pin and the second pin, no welding needs to be performed after the third pin extends out of the plane of the substrate. And pin consumables are saved, and the size of a half-bridge diode integrated device is reduced. The first pin, the second pin and the third pin can be subjected to reflow soldering together with other components on the PCB, so that the automation of soldering and assembling is facilitated, and the soldering efficiency is improved. The utility model discloses a half-bridge diode integrated device integrated level is higher, and occupation space is little, can improve the utilization ratio of PCB board.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a schematic circuit diagram of a half-bridge diode integrated device according to the present invention;
fig. 2 is a schematic diagram of a circuit structure of the power module of the present invention;
fig. 3 is a schematic diagram of a package outline of an embodiment of the half-bridge diode integrated device of the present invention;
fig. 4 is a schematic diagram of a package outline of another embodiment of the half-bridge diode integrated device of the present invention;
fig. 5 to 6 are schematic structural diagrams of an embodiment of the power module of the present invention;
fig. 7 to 8 are schematic structural diagrams of another embodiment of the power module of the present invention.
| Reference numerals | Name (R) | Reference numerals | Name (R) |
| 10 | |
70 | Outer casing |
| 20 | N- |
100 | Half-bridge diode integrated device |
| 30 | P- |
200 | |
| 40 | |
300 | |
| 50 | |
400 | |
| 60 | |
500 | Heat conduction insulating part |
The objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without making creative efforts belong to the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, back \8230;) in the embodiments of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the attached drawings), and if the specific posture is changed, the directional indicator is changed accordingly.
Furthermore, the descriptions in the present application related to "first", "second", etc. are for descriptive purposes only and are not to be construed as indicating or implying relative importance or to imply that the number of technical features indicated are implicitly being indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
Referring to fig. 1-4, the utility model provides a half-bridge diode integrated device, half-bridge diode integrated device includes:
a substrate 10 having first planes oppositely disposed;
an N-type diode chip 20, wherein a cathode of the N-type diode chip 20 is soldered to the first plane of the substrate 10;
a P-type diode chip 30, wherein an anode of the P-type diode chip 30 is soldered to the first plane of the substrate 10;
one end of the first pin 40 is disposed on the first plane of the substrate 10, and is electrically connected to the anode of the N-type diode chip;
one end of the second pin 50 is disposed on the first plane of the substrate 10 and electrically connected to the cathode of the P-type diode chip;
the first lead 40 has a bonding region and a lead-out region, and the bonding region of the first lead 40 is bonded to the first plane of the lead frame and electrically connected to the anode of the N-type diode chip 20. The lead-out region of the first pin 40 extends out of the substrate 10 to form a first end of the half-bridge circuit. The second lead 50 has a bonding region and a lead-out region, and the bonding region of the second lead 50 is bonded to the first plane of the lead frame and electrically connected to the cathode of the P-type diode chip 30. The lead-out region of the second pin 50 extends out of the substrate 10 to form a second end of the half-bridge circuit. Only need during the welding will the utility model discloses a corresponding position of half-bridge diode integrated device's first pin 40 and second pin 50 welding on the circuit board need not to adopt two diode chips to weld respectively and realize a half-bridge circuit, saves weld time. The utility model discloses a half-bridge diode integrated device can be applied to the complete machine overall arrangement, adopts a plurality of half-bridge diode integrated devices to realize multiple rectifier bridge circuit according to the practical application scene. Adopt the utility model discloses a half-bridge diode integrated device is with low costs, and does benefit to the welding assembly automation. The utility model discloses a half-bridge diode integrated device can be applied to converter and 220V, 380V and 480V servo.
The utility model discloses a half-bridge diode integrated device constitutes a half-bridge circuit through integrated N type diode chip and P type diode chip, can replace flat bridge and the square bridge that needs more artifical participation equipment. The welding assembly has higher automation degree and great advantage in comprehensive cost, and can be reflow-welded together with components on the PCB, thereby greatly improving the automatic production efficiency.
In one embodiment, the substrate has a second plane disposed opposite the first plane, the second plane for abutting against a thermally conductive insulator.
In this embodiment, the heat conductive insulating member may be an aluminum substrate or a heat conductive insulating pad (e.g., a ceramic sheet). The half-bridge diode integrated device can generate heat during operation, and the other side of the heat-conducting insulating part can be fixed on the radiator by abutting the second plane against one side of the heat-conducting insulating part in the embodiment. Therefore, heat generated by the half-bridge diode integrated device during working can be quickly conducted to the radiator for heat dissipation, and the working stability of the half-bridge diode integrated device is guaranteed.
In an embodiment, the half-bridge diode integrated device further includes a third pin 60, where the third pin 60 is disposed on the second plane of the substrate;
the substrate includes a wiring layer through which the third pin 60 is electrically connected with the anode of the N-type diode chip 20 and the cathode 30 of the P-type diode chip.
In this embodiment, the third lead 60 is a metal electrode, and the first lead 40 and the second lead 50 are electrically connected to the third lead 60. The third pins 60 may be laid on the second plane of the substrate 10, and thus, the exposed area of the second plane of the third pins 60 is a welding area, which is large, so as to be conveniently welded and fixed to a pad on a PCB, and the gap after welding is small, and the third pins are not easy to fall off. Or the third pin 60 extends out of the second plane perpendicularly to the second plane, so that the third pin is convenient to be welded and fixed with a pad with a through hole on the PCB.
The first lead 40 has a bonding region and a lead-out region, and the bonding region of the first lead 40 is bonded to the first plane of the lead frame and electrically connected to the anode of the N-type diode chip 20. The lead-out region of the first pin 40 extends out of the substrate 10 to form a first end of the half-bridge circuit. The second pin 50 has a bonding region and a lead-out region, and the bonding region of the second pin 50 is bonded to the first plane of the lead frame and electrically connected to the cathode of the P-type diode chip 30. The lead-out region of the second pin 50 extends out of the substrate 10 to form a second end of the half-bridge circuit. The cathode of the N-type diode chip 20 and the anode of the P-type diode chip 30 are electrically connected to the third pin 60, forming a third terminal of the half-bridge circuit. Thus, the N-type diode chip 20 and the P-type diode chip 30 form a half-bridge circuit.
The utility model discloses set up third pin 60 in the second plane of base plate 10, weld to the PCB board through SMT (Surface mounting Technology, surface Mounted Technology) technique, welding assembly degree of automation is high, and then improves assembly efficiency. Third pin 60 sets up at the second plane of base plate 10, and the pin size is little, need not extend away along the second plane of base plate 10 again with PCB board welding, further reduced the utility model discloses a size and the consumptive material of half-bridge diode integrated device.
Only need during the welding will the utility model discloses a corresponding position of half-bridge diode integrated device's first pin 40, second pin 50 and third pin 60 welding on the circuit board need not to adopt two diode chips to weld respectively and realize a half-bridge circuit, saves weld time. The utility model discloses a half-bridge diode integrated device can be applied to the complete machine overall arrangement, adopts a plurality of half-bridge diode integrated devices can realize multiple rectifier bridge circuit according to the practical application scene. Adopt the utility model discloses a half-bridge diode integrated device is with low costs, and does benefit to the welding assembly automation. The utility model discloses a half-bridge diode integrated device can be applied to converter and 220V, 380V and 480V servo.
The utility model discloses a half-bridge diode integrated device constitutes a half-bridge circuit through integrated N type diode chip and P type diode chip, can replace flat bridge and the square bridge that needs more artifical participation equipment. The third pin is arranged on the plane opposite to the first pin and the second pin, so that welding does not need to be carried out outside the plane of the substrate. And pin consumables are saved, and the size of a half-bridge diode integrated device is reduced. The first pin, the second pin and the third pin can be in reflow soldering with other components on the PCB, so that the automation of soldering and assembling is facilitated, and the soldering efficiency is improved. The utility model discloses a half-bridge diode integrated device integrated level is higher, and occupation space is little, can improve the utilization ratio of PCB board.
In one embodiment, the first lead 40 and the N-type diode chip 20 are connected by a bonding wire or a metal wire, and the second lead 50 and the P-type diode chip 30 are connected by a bonding wire or a metal wire.
The present embodiment may implement the electrical connection between the first pin 40 and the N-type diode chip 20, and the second pin 50 and the P-type diode chip 30 through bonding wires. The bonding wire has better electrical property, heat-conducting property and mechanical property and chemical stability. The bonding wire can be classified into a bonding alloy wire, a bonding silver wire, a bonding copper wire and the like according to the material. One end of the bonding wire is bonded on the diode chip by a welding technology such as wire ball bonding, and the other end of the bonding wire is bonded on the lead of the substrate 10, so that the diode chip is electrically connected with the lead of the substrate 10.
The present embodiment can also realize the electrical connection between the first pin 40 and the N-type diode chip 20, and the second pin 50 and the P-type diode chip 30 through metal wires. Such as copper wire, silver wire, gold wire, etc. The metal wire has low cost, easy acquisition and good conductivity.
In one embodiment, the half-bridge diode integrated device further comprises a housing 70, and the housing 70 is disposed over the first plane of the substrate 10.
In this embodiment, the housing 70 is provided with a first through hole for the first pin 40 to pass through and a second through hole for the second pin 50 to pass through. The shell 70 can be made of resin materials, the resin materials are high in insulating performance, large in structural strength and good in sealing performance, mutual interference between the inside of the half-bridge diode integrated device and between components and external circuits can be effectively prevented, and meanwhile, sundries such as dust particles are prevented from entering the half-bridge diode integrated device to affect the working performance of the half-bridge diode integrated device. The present embodiment is covered above the first plane of the substrate 10 by the housing 70, so as to prevent dust particles in the environment from affecting the electrical performance of the internal N-type diode chip 20 and P-type diode chip 30 and other circuits. Meanwhile, the soldering of the third pins 60 on the second plane of the substrate 10 to the circuit board is not affected.
In an embodiment, the other end of the first pin extends along a direction away from the first plane and is bent towards the housing to form a first welding pin; the other end of the second pin extends along the direction far away from the first plane and bends towards the direction of the shell to form a second welding pin.
Referring to fig. 4, the first pin and the second pin of the half-bridge diode integrated device are bent to form welding pins in a direction generally away from the housing, and the welding is realized by contacting the substrate with the PCB board during welding. The pin distance of connecting base plate and PCB board has been reduced in the welding like this, but half-bridge diode integrated device can produce the heat at the during operation, and the heat mainly concentrates on the base plate, and the welding is unfavorable for the base plate heat dissipation like this.
Referring to fig. 3, in this embodiment, the first soldering pins and the second soldering pins are bent toward the outer shell, so that the half-bridge diode integrated device is soldered in a manner of contacting the outer shell with the PCB, and the substrate is exposed, or the substrate is abutted to the heat-conducting insulating member, so as to achieve rapid heat dissipation of the substrate.
In one embodiment, an end of the first pin 40 away from the substrate 10 extends out of the housing 70;
the end of the second pin 50 away from the substrate 10 extends out of the housing 70.
In this embodiment, the first pin 40 and the second pin 50 extending out of the housing 70 may be provided with pin directions according to requirements, for example, the first pin 40, the second pin 50 and the third pin 60 may be bent toward the substrate 10, so that the first pin 40, the second pin 50 and the third pin 60 may be soldered on the same circuit board. Or in a direction away from the substrate 10. In the present embodiment, the second through hole extends the lead-out region of the second pin 50 out of the housing 70, which facilitates the welding of the half-bridge diode integrated device with other devices.
Referring to fig. 2 and 5 to 8, the present invention also provides a power module, which includes a power assembly, the power assembly including: the brake unit B, the inversion unit C and the rectification unit A are sequentially connected in series; wherein, the first and the second end of the pipe are connected with each other,
the rectifying unit a includes a plurality of half-bridge diode integrated devices 100 described above.
In this embodiment, a plurality of half-bridge diode integrated devices 100 may be used to implement a plurality of rectifier bridge circuits, replacing the integrated module customization scheme, the power integrated module scheme, and the discrete device packaging scheme. For example, referring to fig. 2, fig. 2 is a circuit diagram corresponding to fig. 5 to 8. The rectifying unit a may be formed using three half-bridge diode integrated devices 100. During welding, the three half-bridge diode integrated devices 100 and other components can be fixed at corresponding positions on the driving board 400 together in a reflow soldering mode, and the three half-bridge diode integrated devices are electrically connected through a silk-screen circuit layer inside the driving board 400 to form an uncontrollable rectifier bridge circuit, so that the welding process is simpler. Six diode chips do not need to be welded one by one, and welding time is saved. And the screen printing circuit layer of the driving plate 400 is electrically connected with the brake unit B and the inverter unit C. The braking unit B and the inverter unit C may also be implemented by semiconductor discrete devices. The bonding positions of the plurality of half-bridge diode integrated devices on the driving board 400 may be determined according to the routing inside the driving board 400, and are not limited herein.
The utility model discloses a rectifier bridge circuit is constituteed to a plurality of half-bridge diode integrated devices. A plurality of half-bridge diode integrated devices can be reflow-welded together with other components on the driving plate, the production process is simple, and the automatic production efficiency is greatly improved. Compared with the power module scheme in the prior art, the power module scheme has the advantages of lower comprehensive cost and more flexible application. The utility model discloses a half-bridge diode integrated device integrated level is higher, and occupation space is little, and then reduces power module's occupation space.
In one embodiment, the power module further comprises:
the power modules are arranged on the first side of the heat-conducting insulating substrate;
the radiator is abutted against the second side of the heat-conducting insulating substrate and used for radiating heat for the power module; wherein the second side of the thermally conductive insulating substrate is disposed opposite the first side;
and a plurality of groups of electrode terminal groups are arranged on the heat-conducting insulating substrate corresponding to the half-bridge diode integrated devices, and each group of electrode terminal group comprises three electrode terminals.
In this embodiment, the heat-conducting insulating substrate may be an aluminum substrate. The aluminum substrate 300 is provided with a wiring layer therein, and the plurality of half-bridge diode integrated devices 100 soldered to the aluminum substrate 300 are electrically connected to each other to form a rectifying unit a. The plurality of electrode terminals are electrically connected to the first pin, the second pin, and the third pin of the half-bridge diode integrated device 100 through the wiring layers, respectively, and constitute signal terminals of the power module to perform signal transmission with the functional module.
The heat generated by the power module during operation is transferred to the heat sink 200, thereby achieving rapid heat dissipation of the power module. The substrate of the half-bridge diode integrated device 100 may be made of a heat conductive material, so that the thermal resistance between the half-bridge diode integrated device 100 and the circuit board is small, and rapid heat dissipation is achieved. In this embodiment, the heat sink 200 is used to dissipate heat from the power module, thereby reducing the temperature of the power module and preventing the power module from being failed or damaged at high temperature.
The power module further includes a driving board 400, and the aluminum substrate 300 is sandwiched between the driving board 400 and the heat sink 200. The driving board 400 is provided with a welding hole for welding the electrode terminal; the electrode terminals are electrically connected to the functional circuits on the driving board 400 through the soldering holes. Through the electrode terminals, the power module may be electrically connected to the driving board 400 by welding. In particular, the electrode terminals are preferably perpendicular to the upper surface of the aluminum substrate 300 in order to facilitate electrical connection with the driving board 400. The electrode terminals may be pins, the pins are vertically disposed on the upper surface of the aluminum substrate 300 and electrically connected to the plurality of half-bridge diode integrated devices 100 on the aluminum substrate 300 through a wiring layer, and a plurality of soldering holes are disposed on the driving board 400 corresponding to the pins. The driving board 400 is mounted on the aluminum substrate 300, the pins penetrate through the welding holes, and the exposed portions are welded and fixed with the welding holes, so that the aluminum substrate 300 is electrically connected with the driving board 400.
The present embodiment may constitute the signal terminals of the power module through a plurality of sets of electrode terminals to realize signal transmission with the driving board 400. Meanwhile, since the aluminum substrate 300 itself is a heat conductive insulating material, it is possible to isolate the electrical connection between the power module and the heat sink 200, and to quickly transmit the heat of the power module to the heat sink 200 for heat dissipation. An insulating gasket is not needed to be arranged, and heat conduction and insulation materials are saved. The half-bridge diode integrated device 100 is beneficial to reducing the possibility of generating cavities in the installation process, mechanical fixation is completed, electrical connection is carried out at the same time, the production process is greatly simplified, the overall cost is reduced, the heat dissipation performance can be improved, and the temperature fluctuation caused by servo drive high-power low-speed overload is effectively slowed down.
In one embodiment, the power module further comprises:
a drive plate on which the power components are arranged;
the heat conduction and insulation piece is provided with a first side and a second side which are oppositely arranged, the first side of the heat conduction and insulation piece is abutted against the power assembly, and the second side of the heat conduction and insulation piece is abutted against the radiator;
the radiator is fixedly connected with the driving plate. The heat-conducting insulating piece and the power assembly are clamped between the heat radiator and the driving board.
The driving board 400 has wiring layers through which the plurality of half-bridge diode integrated devices 100 are electrically connected to form the rectifying unit a. The power module is also electrically connected to other functional circuits on the driving board 400 through the wiring layer.
In this embodiment, the heat conducting insulating member 500 may be a heat conducting insulating rubber, a heat conducting silica gel insulating sheet, or a ceramic substrate. The driving board 400 is provided with a plurality of mounting holes, and the heat conductive insulator 500 is provided with mounting holes at positions corresponding to the driving board 400. In this way, the power module may be fixed to the heat sink 200 by a fastener such as a screw, and in order to improve the heat conduction efficiency, a heat conduction interface material may be filled between the back surface of the power module (i.e., the surface opposite to the half-bridge diode integrated device 100) and the surface of the heat sink 200 to fill an air gap.
The user can select a suitable frequency converter component according to the actual application scene. For example, the high-power module has a large thermal resistance during operation, and an aluminum substrate 300 with high cost and good heat conduction performance can be used as a circuit board for insulation and heat conduction, so that rapid heat dissipation is realized, and signal transmission is realized; the small-power module has small thermal resistance in working, and can use the heat-conducting insulating part 500 with low cost and low heat-conducting performance to conduct heat in an insulating way, thereby realizing heat dissipation.
The utility model also provides a frequency converter, which comprises the half-bridge diode integrated device;
and/or, a power module as described above.
The utility model discloses a half-bridge circuit is constituteed to the integrated N type diode chip of half-bridge diode integrated device and P type diode chip, can replace flat bridge and the square bridge that needs more manual work to participate in the equipment. The third pin is arranged on the plane opposite to the first pin and the second pin, so that welding does not need to be carried out outside the plane of the substrate. The pin consumption is saved, and the size of a half-bridge diode integrated device is reduced. The first pin, the second pin and the third pin can be in reflow soldering with other components on the PCB, so that the automation of soldering and assembling is facilitated, and the soldering efficiency is improved. The utility model discloses a half-bridge diode integrated device integrated level is higher, and occupation space is little, can improve the utilization ratio of PCB board, and then reduces the size of converter.
The above is only the optional embodiment of the present invention, and not limiting the patent scope of the present invention, all under the inventive concept of the present invention, the equivalent structure transformation made by the contents of the specification and the attached drawings is utilized, or the direct/indirect application is included in other related technical fields in the patent protection scope of the present invention.
Claims (10)
1. A half-bridge diode integrated device, comprising:
a substrate having a first plane;
the cathode of the N-type diode chip is welded on the first plane;
the anode of the P-type diode chip is welded on the first plane;
one end of the first pin is arranged on the first plane and is electrically connected with the anode of the N-type diode;
and one end of the second pin is arranged on the first plane and is electrically connected with the cathode of the P-type diode.
2. The half-bridge diode integrated device of claim 1, wherein the substrate has a second plane disposed opposite the first plane, the second plane for abutting a thermally conductive insulator.
3. The half-bridge diode integrated device of claim 2, further comprising a third pin disposed in the second plane of the substrate;
the substrate comprises a wiring layer, and the third pin is electrically connected with the anode of the N-type diode chip and the cathode of the P-type diode through the wiring layer.
4. The half-bridge diode integrated device of claim 1, further comprising a housing, the housing cap disposed on the first plane of the substrate.
5. The half-bridge diode integrated device of claim 4, wherein the other end of the first lead extends in a direction away from the first plane and is bent toward the housing to form a first solder lead; the other end of the second pin extends along the direction far away from the first plane and bends towards the direction of the shell to form a second welding pin.
6. The half-bridge diode integrated device of claim 4, wherein an end of the first pin distal from the substrate extends outside the housing;
one end of the second pin, which is far away from the substrate, extends out of the shell.
7. A power module, characterized in that the power module comprises a power assembly, the power assembly comprising: the brake unit, the inverter unit and the rectification unit are sequentially connected in series; wherein the content of the first and second substances,
the rectifying unit comprises a plurality of half-bridge diode integrated devices as claimed in any one of claims 1 to 6.
8. The power module of claim 7, wherein the power module further comprises:
the power modules are arranged on the first side of the heat-conducting insulating substrate;
the radiator is abutted against the second side of the heat-conducting insulating substrate and used for radiating heat for the power module; wherein the second side of the thermally conductive and insulating substrate is disposed opposite to the first side;
the heat-conducting insulating substrate is provided with a plurality of groups of electrode terminal groups corresponding to the half-bridge diode integrated devices, and each group of electrode terminal group comprises three electrode terminals.
9. The power module of claim 7, wherein the power module further comprises:
the power assembly is arranged on the driving plate;
the heat conduction and insulation piece is provided with a first side and a second side which are oppositely arranged, the first side of the heat conduction and insulation piece is abutted against the power assembly, and the second side of the heat conduction and insulation piece is abutted against the radiator;
the radiator is fixedly connected with the driving plate; the heat-conducting insulating piece and the power assembly are clamped between the heat radiator and the driving board.
10. A frequency converter, characterized in that it comprises a half-bridge diode integrated device according to any of claims 1 to 6;
and/or, comprising a power module according to any of claims 7-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221652123.XU CN217719583U (en) | 2022-06-29 | 2022-06-29 | Half-bridge diode integrated device, power module and frequency converter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221652123.XU CN217719583U (en) | 2022-06-29 | 2022-06-29 | Half-bridge diode integrated device, power module and frequency converter |
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| Publication Number | Publication Date |
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| CN217719583U true CN217719583U (en) | 2022-11-01 |
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| CN202221652123.XU Active CN217719583U (en) | 2022-06-29 | 2022-06-29 | Half-bridge diode integrated device, power module and frequency converter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117423688A (en) * | 2023-12-15 | 2024-01-19 | 四川晁禾微电子有限公司 | Fast recovery flywheel diode module applied to high-speed inverter circuit |
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2022
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117423688A (en) * | 2023-12-15 | 2024-01-19 | 四川晁禾微电子有限公司 | Fast recovery flywheel diode module applied to high-speed inverter circuit |
| CN117423688B (en) * | 2023-12-15 | 2024-02-23 | 四川晁禾微电子有限公司 | Fast recovery flywheel diode module applied to high-speed inverter circuit |
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