CN210379025U - Power device packaging structure - Google Patents

Power device packaging structure Download PDF

Info

Publication number
CN210379025U
CN210379025U CN201921390223.8U CN201921390223U CN210379025U CN 210379025 U CN210379025 U CN 210379025U CN 201921390223 U CN201921390223 U CN 201921390223U CN 210379025 U CN210379025 U CN 210379025U
Authority
CN
China
Prior art keywords
power device
circuit board
conductive
metal
heat dissipation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201921390223.8U
Other languages
Chinese (zh)
Inventor
赵永新
林伟健
李汉祥
李其鸿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fengpeng Electronics Zhuhai Co Ltd
Original Assignee
Fengpeng Electronics Zhuhai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fengpeng Electronics Zhuhai Co Ltd filed Critical Fengpeng Electronics Zhuhai Co Ltd
Priority to CN201921390223.8U priority Critical patent/CN210379025U/en
Application granted granted Critical
Publication of CN210379025U publication Critical patent/CN210379025U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The utility model relates to a power device packaging structure, include: a power device; the circuit board and the heat dissipation assembly are respectively arranged on two opposite sides of the power device, the circuit board is provided with a ceramic heat dissipation body which is at least partially overlapped with the power device in the thickness direction of the circuit board, and the heat dissipation assembly comprises a heat dissipation metal layer, a conductive metal member electrically connected with the power device and a ceramic insulating layer arranged between the conductive metal member and the heat dissipation metal layer; one or more metal spacers, both ends of which are connected with the circuit board and the heat dissipation assembly, respectively, and at least one metal spacer establishes electrical connection between the conductive metal member and the circuit board; a circuit element mounted on an inner side surface of the circuit board and electrically connected to the circuit board; and a resin package body which encapsulates the power device, the circuit element, the conductive metal member, and the metal spacer inside thereof. The utility model discloses a power device packaging mechanism has that heat dispersion is good, the preparation is convenient and the miniaturized advantage of being convenient for.

Description

Power device packaging structure
Technical Field
The utility model relates to the field of power devices; and more particularly, to a package structure of a power device.
Background
Power devices such as IGBTs (insulated gate bipolar transistors) and MOSFETs (metal-oxide semiconductor field effect transistors) generate a large amount of heat during operation, and if the heat generated by the power devices cannot be dissipated in time, the operation of the power devices and peripheral circuit elements thereof is seriously affected.
Chinese patent document CN108133915A discloses a power module with a built-in power device and double-sided heat dissipation, wherein the power device is packaged in an insulating package substrate which is stacked and prepared by a hot-pressing process, the package substrate further has two ceramic heat sinks which are respectively disposed on two opposite sides of the power device and thermally connected to the power device, and the package substrate has a heat dissipation copper foil thermally connected to the ceramic heat sinks, so as to achieve double-sided efficient heat dissipation of the power device.
Chinese patent document CN109103159A discloses a device module with an embedded switch chip, which includes: the double-sided circuit board is provided with a first bonding pad on a first surface and a second bonding pad on a second surface opposite to the first surface; a heat radiation substrate embedded with an electric insulation heat radiation body and arranged on the first surface side of the double-sided circuit board; for example, the switch chips of the IGBT and the MOSFET are also embedded in the heat dissipation substrate, the pins of the switch chips are welded on the first bonding pads, and the other side of the switch chips, which is opposite to the pins, is thermally connected with the electric insulation heat dissipation body; and the pin of the energy storage device such as a capacitor or an inductor is welded on the second bonding pad.
The disadvantages of the prior art are as follows: the ceramic heat radiation bodies are used on the two sides of the power device for heat radiation, and the size of the ceramic heat radiation bodies embedded in the circuit board is limited, so that the heat radiation performance of the module still has a space for improving; the power device is subjected to hot-pressing packaging by using the stacked insulating medium layers, so that the manufacturing cost is relatively high, and the power device is easy to damage; energy storage devices such as capacitors or inductors are arranged outside the module, so that the miniaturization of the module is not convenient to realize.
Disclosure of Invention
The utility model aims at providing a power device packaging structure who has excellent heat dispersion, makes conveniently and be convenient for miniaturizedly.
In order to realize this main objective, the utility model provides a power device packaging structure, it includes:
a power device;
a circuit board disposed on a first surface side of the power device; the circuit board comprises an insulating substrate and a conducting circuit, wherein the conducting circuit is formed on the inner side surface of the insulating substrate and is electrically connected with the power device, the insulating substrate is provided with a ceramic radiator penetrating through the insulating substrate in the thickness direction, and the ceramic radiator and the power device are at least partially overlapped in the thickness direction of the circuit board;
a heat dissipating member disposed on a second surface side of the power device with respect to the first surface thereof; the heat dissipation assembly comprises a heat dissipation metal layer, a conductive metal member electrically connected with the power device and a ceramic insulation layer arranged between the conductive metal member and the heat dissipation metal layer;
the two ends of the metal spacer are respectively connected with the circuit board and the radiating assembly; the number of the metal spacers is one or more, and at least one metal spacer establishes an electrical connection between the conductive metal member and the conductive line;
the circuit element is arranged on the inner side surface of the circuit board and is electrically connected with the conducting circuit of the circuit board;
and the resin packaging body is used for packaging the power device, the circuit element, the metal spacer and the conductive metal member in the resin packaging body, and partially or completely exposing the heat dissipation metal layer and the outer side surface of the circuit board.
The technical scheme has the advantages that: the power device adopts a circuit board embedded with a ceramic radiator as a packaging carrier plate, and the circuit board provides flexibility in design of conducting circuits on one hand and can utilize the ceramic radiator to radiate the power device on the other hand; the heat dissipation assembly comprises a heat dissipation metal layer, a conductive metal member and a ceramic insulation layer arranged between the conductive metal member and the heat dissipation metal layer, and the conductive metal member and the ceramic insulation layer positioned in the resin packaging body can have surface areas (the surface area parallel to the thickness direction of the circuit board) larger than that of the ceramic heat dissipation body, so that the rapid heat dissipation of the power device is ensured; the power device and the like are encapsulated by the resin encapsulation body, and the resin encapsulation body can be manufactured by a resin injection molding process, so that the manufacturing process is simple, the efficiency is high, and the cost is low; the circuit element is packaged in the packaging structure, so that the miniaturization of the packaging structure is convenient to realize.
In an embodiment of the present invention, the material of the ceramic heat sink and the ceramic insulating layer may be a heat conductive ceramic such as aluminum nitride, aluminum oxide, silicon nitride, or silicon carbide ceramic.
In a preferred embodiment of the present invention, the conductive metal member has a protruding portion that protrudes toward and is connected to the power device. Wherein, the height of the convex part can be designed according to the height difference between the circuit element and the power device, so as to realize the internal encapsulation of the power device and the circuit element with different heights.
In a preferred embodiment of the invention, a plurality of metal spacers are provided at least on opposite sides of the power device; the circuit board further comprises a metal foil which is formed on the inner side surface of the insulating substrate and is not used for transmitting current, and a part of the metal spacers are in welded connection with the conductive metal members and the metal foil; another part of the metal spacers in the plurality of metal spacers are connected with the conductive metal member and the conductive line by welding, so that the electrical connection is established between the conductive metal member and the conductive line.
In the present invention, the distance between the metal spacer and the power device is preferably 0.7 mm or more.
In an embodiment of the present invention, the power device package structure may further include a conductive pin for receiving input power, one end of the conductive pin is connected to the conductive circuit by welding, and the other end of the conductive pin extends out of the resin package.
Preferably, the conductive pin is formed with a stepped surface at the other end thereof protruding from the resin package body, so as to facilitate soldering of the conductive pin with the external power supply terminal and miniaturization of the soldering structure.
In the embodiment of the present invention, the heat dissipation metal layer is preferably a copper foil layer with a thickness of 0.1 mm to 0.8 mm, and the ceramic insulation layer is preferably an alumina ceramic layer with a thickness of 0.1 mm to 1 mm.
In an embodiment of the present invention, the circuit board is preferably a single or multi-layer FR-4 circuit board with embedded aluminum nitride ceramic radiators.
According to the utility model discloses a concrete implementation mode, power device packaging structure can also include the mounting hole, and this mounting hole runs through power device packaging structure.
In a preferred embodiment of the present invention, the circuit board further includes a heat dissipation copper foil layer formed on an outer surface thereof and thermally connected to the ceramic heat sink, so as to increase a heat dissipation area and achieve a better heat dissipation performance.
The utility model discloses in, power device can be IGBT or MOSFET, nevertheless the utility model discloses a packaging structure does not use this as the limit, but the encapsulation that can be used for other power devices equally.
To more clearly illustrate the objects, technical solutions and advantages of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
It should be noted that, for the sake of clarity of illustration of the structures to be expressed, different parts in the drawings may not be drawn to the same scale, and therefore, unless explicitly stated otherwise, the contents expressed in the drawings do not constitute a limitation on the size and the proportional relationship of the parts.
Drawings
Fig. 1 is a schematic cross-sectional structure diagram of an embodiment 1 of a power device package structure of the present invention;
fig. 2 is a schematic cross-sectional structure diagram of embodiment 2 of the power device package structure of the present invention;
fig. 3 is a schematic cross-sectional structure diagram of embodiment 3 of the power device package structure of the present invention.
Detailed Description
Example 1
As shown in fig. 1, the power device package structure of embodiment 1 includes a MOSFET10 as a power device, a circuit board 20, a heat dissipation member 30, a circuit element 40, and a resin package 100. The circuit board 20 includes an insulating substrate 21, the insulating substrate 21 is preferably an FR-4 insulating substrate (which includes multiple layers of FR-4 core boards and a cured adhesive layer disposed between the FR-4 core boards, not shown in fig. 1) embedded with an aluminum nitride ceramic radiator 211, and the aluminum nitride ceramic radiator 211 penetrates through the insulating substrate 21 in the thickness direction of the insulating substrate 21; the insulating substrate 21 has a conductive line 22 for transmitting current and a metal foil 23 not for transmitting current on the inner surface thereof. Although the circuit board 20 is shown in fig. 1 as a single-layer circuit board having conductive traces only on its inside surface, in other embodiments, the circuit board 20 may be a multi-layer circuit board having conductive traces also inside.
MOSFET10 has first and second oppositely disposed surfaces, with the first surface having a G-pole pin 11, an S-pole pin 12, and a D-pole pin (not shown), and the second surface having a TPAD pin 13. The G-pole pin 11, the S-pole pin 12 and the D-pole pin of the MOSFET10 are electrically connected to the conductive trace 22 by soldering, and the aluminum nitride ceramic heat sink 211 and the MOSFET10 are at least partially overlapped in the thickness direction of the circuit board 20.
The heat dissipation member 30 is disposed on the second surface side of the MOSFET10, and includes a heat dissipation metal layer 33, a conductive metal member 32 electrically connected to the TPAD pin 13 of the MOSFET10, and a ceramic insulating layer 31 disposed between the conductive metal member 32 and the heat dissipation metal layer 33, and wherein the conductive metal member 32 has a projection 321 projecting toward the MOSFET10 and electrically connected to the TPAD pin 13 thereof. The heat-dissipating metal layer 33 is a copper foil layer having a thickness of 0.1 mm to 0.8 mm (e.g., about 0.3 mm), and the ceramic insulating layer 31 is an aluminum nitride or aluminum oxide ceramic layer having a thickness of 0.1 mm to 1 mm (e.g., about 0.6 mm, 0.3 mm). The conductive metal member 32 is also a copper member, and has a thickness of 0.1 mm to 1 mm (e.g., about 0.6 mm) in a region other than the projection 321. The height of the projection 321 can be controlled as follows: when the height of the tallest circuit element 40 is equal to or greater than the height of the MOSFET10, the sum of the heights of the projection 321 and the MOSFET10 is set to be greater than the height of the tallest circuit element 40 (the dimension in the thickness direction of the circuit board 20). When the heights of all the circuit elements 40 are smaller than the height of the MOSFET10, the conductive metal member 32 may be provided with the projection 321, or may not be provided with the projection 321.
A plurality of metal spacers 51 and 52 are arranged between the circuit board 20 and the heat sink assembly 30, and two ends of the metal spacers 51 and 52 are respectively connected with the circuit board 20 and the heat sink assembly 30; wherein the metal spacers 51 and 52 are disposed on opposite sides of the MOSFET10, and the distance between the metal spacers 51 and 52 and the MOSFET10 is controlled to be 0.7 mm or more (e.g., 0.8 mm and 1 mm). Specifically, both ends of the metal spacer 51 are soldered to the conductive metal member 32 and the conductive line 22, respectively, to establish electrical connection between the conductive line 22 and the conductive metal member 32, thereby achieving electrical connection between the S-pole pin 12 and the TPAD pin 13 of the MOSFET 10; both ends of the metal spacer 52 are solder-connected to the conductive metal member 32 and the metal foil 23, respectively, thereby smoothly supporting and connecting the circuit board 20 and the heat dissipation assembly 30 together with the metal spacer 51. In other embodiments of the present invention, the metal spacers 51, 52 may be formed integrally with the conductive metal member 32. When MOSFET10 is in operation, TPAD pin 13 is electrically connected to the S-pole pin 12, but no current flows through it. The TPAD pin 13 has excellent thermal conductivity and can rapidly dissipate heat within the MOSFET 10.
The circuit component 40 is a passive component such as a resistor, a capacitor, an inductor, etc., which is mounted on the inner side surface of the circuit board 20 and electrically connected to the conductive line 22 of the inner side surface of the circuit board 20; the resin package 100 encapsulates the MOSFET10, the circuit element 40, the metal spacers 51 and 52, and the conductive metal member 32 inside thereof, and completely exposes the heat-dissipating metal layer 33 and the outer side surface of the circuit board 20.
With continued reference to fig. 1, the power device package further includes a conductive pin 60 for receiving input power and a mounting hole 70 for mounting a fastening screw. One end of the conductive pin 60 is connected to the conductive trace 22 by soldering, and the other end of the conductive pin 60 extends out of the resin package 100, and a step surface 61 is formed at the other end extending out of the resin package 100.
Example 2
As shown in fig. 2, embodiment 2 differs from embodiment 1 in that: the circuit board 20 also includes a heat dissipating copper foil layer 24 formed on an outer surface thereof and thermally connected to the ceramic heat sink 211.
Example 3
As shown in fig. 3, the MOSFET 100 of another structure is packaged in embodiment 3, and the first surface of the MOSFET 100 has a G-pole pin 111 and an S-pole pin 112, and the second surface has a D-pole pin 113. Wherein, the G-pole pin 111 and the S-pole pin 112 of the MOSFET 100 are electrically connected to the conductive trace 22 by soldering; the D-pole pin 113 is electrically connected to the projection 321 of the conductive metal member 32, and is further electrically connected to the conductive pattern 22 through the metal support 51.
For the description of other parts of the package structure in embodiment 3, reference may be made to embodiments 1 and 2, and details are not repeated here.
Although the present invention has been described with reference to specific embodiments, the embodiments are not intended to limit the scope of the invention. Any person skilled in the art can make some modifications without departing from the scope of the invention, i.e. all equivalent modifications made according to the invention are intended to be covered by the scope of the invention. Therefore, the protection scope of the present invention is subject to the claims.

Claims (10)

1. A power device package structure, comprising: a power device; a circuit board disposed on a first surface side of the power device; the circuit board comprises an insulating substrate and a conducting circuit, wherein the conducting circuit is formed on the inner side surface of the insulating substrate and is electrically connected with the power device, the insulating substrate is provided with a ceramic radiator penetrating through the insulating substrate in the thickness direction, and the ceramic radiator and the power device are at least partially overlapped in the thickness direction of the circuit board; the method is characterized in that:
a heat dissipation member provided on a second surface side of the power device with respect to the first surface; the heat dissipation assembly comprises a heat dissipation metal layer, a conductive metal member electrically connected with the power device and a ceramic insulation layer arranged between the conductive metal member and the heat dissipation metal layer;
the two ends of the metal spacer are respectively connected with the circuit board and the heat dissipation assembly; the number of the metal spacers is one or more, and at least one metal spacer establishes electrical connection between the conductive metal member and the conductive line;
the circuit element is arranged on the inner side surface of the circuit board and is electrically connected with the conductive circuit;
and a resin package body which encapsulates the power device, the metal spacer and the circuit element inside thereof, and partially or completely exposes the heat dissipation metal layer and the outer side surface of the circuit board.
2. The power device package structure of claim 1, wherein: the conductive metal member has a protruding portion that protrudes toward and is connected to the power device.
3. The power device package structure of claim 1, wherein: a plurality of the metal spacers are disposed at least on opposite sides of the power device; the circuit board further comprises a metal foil which is formed on the inner side surface of the insulating substrate and is not used for transmitting current, a part of metal spacers are in welded connection with the conductive metal member and the metal foil, and another part of metal spacers are in welded connection with the conductive metal member and the conductive line.
4. The power device package structure of claim 1, wherein: the distance between the metal spacer and the power device is more than 0.7 mm.
5. The power device package structure of claim 1, wherein: the resin packaging structure further comprises a conductive pin for receiving input power, one end of the conductive pin is connected with the conductive circuit in a welding mode, and the other end of the conductive pin extends out of the resin packaging body.
6. The power device package structure of claim 5, wherein: the conductive pins extend out of the other end of the resin packaging body to form a step surface.
7. The power device package structure of claim 1, wherein: the heat dissipation metal layer is a copper foil layer with the thickness of 0.1 mm to 0.8 mm, and the ceramic insulation layer is an alumina ceramic layer with the thickness of 0.1 mm to 1 mm.
8. The power device package structure of claim 1, wherein: the circuit board is a single-layer or multi-layer FR-4 circuit board embedded with an aluminum nitride ceramic radiator.
9. The power device package structure of claim 1, wherein: the power device packaging structure further comprises a mounting hole penetrating through the power device packaging structure.
10. The power device package structure of claim 1, wherein: the circuit board further includes a heat dissipating copper foil layer formed on an outer surface thereof and thermally connected to the ceramic heat sink.
CN201921390223.8U 2019-08-23 2019-08-23 Power device packaging structure Active CN210379025U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201921390223.8U CN210379025U (en) 2019-08-23 2019-08-23 Power device packaging structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201921390223.8U CN210379025U (en) 2019-08-23 2019-08-23 Power device packaging structure

Publications (1)

Publication Number Publication Date
CN210379025U true CN210379025U (en) 2020-04-21

Family

ID=70252560

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201921390223.8U Active CN210379025U (en) 2019-08-23 2019-08-23 Power device packaging structure

Country Status (1)

Country Link
CN (1) CN210379025U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114867185A (en) * 2022-03-14 2022-08-05 江苏耀鸿电子有限公司 Heat-dissipation carrier plate for high-frequency IC packaging and preparation process thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114867185A (en) * 2022-03-14 2022-08-05 江苏耀鸿电子有限公司 Heat-dissipation carrier plate for high-frequency IC packaging and preparation process thereof
CN114867185B (en) * 2022-03-14 2023-08-01 江苏耀鸿电子有限公司 Carrier plate for heat dissipation high-frequency IC packaging and preparation process thereof

Similar Documents

Publication Publication Date Title
JP4634497B2 (en) Power semiconductor module
KR101388737B1 (en) Semiconductor package, semiconductor module, and mounting structure thereof
JP6147256B2 (en) Power semiconductor module
US20140029201A1 (en) Power package module and manufacturing method thereof
KR101278393B1 (en) Power package module and a fabricating mothod the same
US20090244848A1 (en) Power Device Substrates and Power Device Packages Including the Same
US7551455B2 (en) Package structure
CN111261598B (en) Packaging structure and power module applicable to same
US20040222515A1 (en) Double-sided cooling isolated packaged power semiconductor device
JP2007305702A (en) Semiconductor device and its manufacturing method
JP2019071412A (en) Chip package
CN210349834U (en) Double-side radiating power device module
CN117153798B (en) Packaging structure of power module
KR102490612B1 (en) Power semiconductor module
CN105990275B (en) Power module package part and preparation method thereof
CN210379025U (en) Power device packaging structure
CN110634813B (en) Packaging structure
CN216145615U (en) Semiconductor circuit having a plurality of transistors
CN110676232B (en) Semiconductor device packaging structure, manufacturing method thereof and electronic equipment
CN112397472A (en) Semiconductor device with a plurality of semiconductor chips
CN210349819U (en) Power device module
JP2016101071A (en) Semiconductor device
JP6060053B2 (en) Power semiconductor device
KR101897304B1 (en) Power module
CN214672591U (en) Power device packaging structure

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant