CN209929293U

CN209929293U - Power module and inversion power unit

Info

Publication number: CN209929293U
Application number: CN201920265256.3U
Authority: CN
Inventors: 张振中; 孙军; 和巍巍; 汪之涵; 郝建勇; 林盛杰
Original assignee: Shenzhen Basic Semiconductor Co Ltd
Current assignee: Shenzhen Basic Semiconductor Co Ltd
Priority date: 2019-02-28
Filing date: 2019-02-28
Publication date: 2020-01-10
Anticipated expiration: 2029-02-28

Abstract

The utility model discloses a power module, including shell, chip, input terminal, output terminal and control terminal, the chip sets up in the shell, input terminal output terminal with control terminal respectively with the chip electricity is connected and respectively fixed connection be in on the shell. The utility model also discloses an contravariant power unit, including a plurality of foretell power module, wherein a plurality of parallel connection between the power module. The utility model provides a power module is small and easily parallelly connected, connects in parallel through a plurality of power modules and forms contravariant power unit for when taking place to damage, need not wholly to change, can reduce the replacement cost of module in using.

Description

Power module and inversion power unit

Technical Field

The utility model relates to a power module and contravariant power unit.

Background

The power module is required to have the characteristics of high power density, high reliability, high-temperature resistance application, convenience in application and the like. In a conventional power module, an entire application circuit is usually packaged in one module, and when an abnormality occurs in an actual application, the module is damaged, and needs to be replaced as a whole.

The above background disclosure is only provided to aid in understanding the concepts and technical solutions of the present invention, and it does not necessarily belong to the prior art of the present patent application, and it should not be used to assess the novelty and inventive step of the present application without explicit evidence that the above content has been disclosed at the filing date of the present patent application.

SUMMERY OF THE UTILITY MODEL

In order to solve the technical problem, the utility model provides a small and easy parallelly connected power module forms contravariant power unit through a plurality of power module parallels for when taking place to damage, need not wholly to change, can reduce the replacement cost of module in using.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

the utility model discloses a power module, including shell, chip, input terminal, output terminal and control terminal, the chip sets up in the shell, input terminal output terminal with control terminal respectively with the chip electricity is connected and respectively fixed connection be in on the shell.

Preferably, the chip adopts a silicon power device or a wide bandgap semiconductor power device.

Preferably, the input terminal includes an N terminal and a P terminal, the N terminal and the P terminal are respectively fixed to a first end of the housing, and the output terminal is fixed to a second end opposite to the first end of the housing.

Preferably, the housing is provided with a through hole, which leads from the first side to the second side of the housing.

Preferably, the power module includes a plurality of the control terminals therein, and the plurality of the control terminals are respectively fixed to the first side surface of the housing.

Preferably, the power module includes four control terminals, and two of the four control terminals are symmetrically disposed on two sides of the through hole.

Preferably, the input terminal, the output terminal and the control terminal are electrically connected to the chip by a lead frame or a wire bonding method, respectively.

Preferably, the chip adopts a ceramic copper clad laminate or an active metal brazing copper clad ceramic substrate; the input terminal and the output terminal are respectively and directly connected to the ceramic copper clad laminate or the active metal brazing copper clad ceramic substrate, and the control terminal is connected to the ceramic copper clad laminate or the active metal brazing copper clad ceramic substrate in a crimping pin mode or a welding mode.

Preferably, the thickness of the shell is 3-25 mm.

The utility model also discloses an contravariant power unit, including a plurality of above power module, wherein a plurality of parallel connection between the power module.

Compared with the prior art, the beneficial effects of the utility model reside in that: the utility model discloses a power module is easy to be connected in parallel, and can be connected in parallel to form application topological structures such as three-phase inversion, full-bridge inversion and the like according to practical application requirements; when the practical application is abnormal, if the individual half-bridge unit is damaged, only the damaged module needs to be replaced, and the whole module does not need to be replaced, so that the replacement cost of the module in the application can be reduced. And simultaneously, the utility model provides a power module is a basic unit among the contravariant power unit, has reduced the chip in single module parallelly connected, has reduced the influence each other between the parallelly connected unit in the module, is favorable to improving the application of flow equalizing between the parallelly connected unit.

Drawings

Fig. 1 is a schematic structural diagram of a power module according to a first embodiment of the present invention;

FIG. 2 is a schematic top view of FIG. 1;

fig. 3 is a schematic structural diagram of a power module according to a second embodiment of the present invention;

fig. 4 is a schematic top view of fig. 2.

Detailed Description

The invention will be further described with reference to the accompanying drawings and preferred embodiments.

As shown in fig. 1, a power module according to a first embodiment of the present invention includes a housing 10, a chip (not shown), an input terminal 20, an output terminal 30, and a control terminal 40, wherein the chip is disposed in the housing 10, and the input terminal 20, the output terminal 30, and the control terminal 40 are electrically connected to the chip respectively and are respectively and fixedly connected to the housing 10; wherein the thickness of the shell 10 is 3-25 mm.

The input terminal 20 includes an N terminal 21 and a P terminal 22, the N terminal 21 is for receiving a negative potential of a power supply, the P terminal 22 is for receiving a positive potential of the power supply, and the N terminal 21 and the P terminal 22 are respectively fixed to a first end of the housing 10; the output terminal 30 is fixed to a second end of the housing 10, wherein the first end and the second end of the housing 10 are opposite to each other.

Wherein the center of the housing 10 is provided with a through hole 11 leading from a first side of the housing 10 to a second side arranged opposite to the first side, through which through hole 11 the power module can be used for fixing. In the present embodiment, the control terminals 40 include a first control terminal 41, a second control terminal 42, a third control terminal 43 and a fourth control terminal 44 in common, and the four control terminals 40 are gate and source control terminal connection terminals of the power switch in the module and are respectively fixed on the first side surface of the housing 10. The first control terminal 41 and the second control terminal 42 are disposed on the left side of the through hole 11, and the third control terminal 43 and the fourth control terminal 44 are symmetrically disposed on the right side of the through hole 11, that is, the four control terminals 40 are symmetrically disposed on two sides of the through hole 11 in pairs, so as to facilitate the installation of the module driving board.

In some examples, the input terminal 20, the output terminal 30, and the control terminal 40 are electrically connected to the chip by way of a lead frame (LeadFrame) or Wire Bonding (Wire Bonding), respectively.

In some examples, the chip is a copper clad ceramic (DBC) or an active metal brazing copper clad ceramic substrate (AMB), wherein the input terminal 20 and the output terminal 30 are directly connected to the DBC or AMB, respectively, and the control terminal 40 is connected to the DBC or AMB by a press pin or by welding.

In some examples, the chip may employ a silicon power device or a wide bandgap semiconductor power device, where the wide bandgap semiconductor power device may be a silicon carbide power device.

As shown in fig. 2, the N terminal 21 and the P terminal 22 are on the same horizontal plane, and the lead electrode paths of the N terminal 21 and the P terminal 22 are smaller.

As shown in fig. 3 and fig. 4, the power module according to the second embodiment of the present invention is different from the first embodiment only in that in the present embodiment, the N terminal 21 and the P terminal 22 are not on the same horizontal plane and have a certain height difference, and at this time, the lead-out electrode channels of the N terminal 21 and the P terminal 22 may be large, which is beneficial to passing a large current.

The utility model discloses a still disclose an contravariant power unit in another preferred embodiment, including a plurality of foretell power module, wherein parallel connection between a plurality of power module.

The module packaged by the power device can be widely applied to the application fields of photovoltaic, electric vehicles and the like. Modules are being developed with high power density and high reliability. The module with high power density and high reliability is beneficial to reducing the size of the system and improving the power density of the system; particularly in the field of inverter applications, high power density and high reliability modules are beneficial to improving system performance. The utility model discloses each embodiment provides a small and easy parallel power module aiming at the application demand of the parallel use of the high power density and high reliability module, and the power module can be connected in parallel to form the application topological structure of three-phase inversion, full-bridge inversion and the like according to the actual application demand; when the practical application is abnormal, if the individual half-bridge unit is damaged, only the damaged module needs to be replaced, and the whole module does not need to be replaced, so that the replacement cost of the module in the application can be reduced. And simultaneously, the utility model provides a power module is a basic unit among the contravariant power unit, has reduced the chip in single module parallelly connected, has reduced the influence each other between the parallelly connected unit in the module, is favorable to improving the application of flow equalizing between the parallelly connected unit.

The foregoing is a more detailed description of the present invention, taken in conjunction with the specific preferred embodiments thereof, and it is not intended that the invention be limited to the specific embodiments shown and described. To the technical field of the utility model belongs to the prerequisite of not deviating from the utility model discloses, can also make a plurality of equal substitution or obvious variants, performance or usage are the same moreover, all should regard as belonging to the utility model's scope of protection.

Claims

1. A power module is characterized by comprising a shell, a chip, an input terminal, an output terminal and a control terminal, wherein the chip is arranged in the shell, and the input terminal, the output terminal and the control terminal are respectively electrically connected with the chip and respectively and fixedly connected to the shell.

2. The power module of claim 1, wherein the chip is a silicon power device or a wide bandgap semiconductor power device.

3. The power module of claim 1, wherein the input terminal includes an N terminal and a P terminal, the N terminal and the P terminal being respectively fixed to a first end of the housing, and the output terminal being fixed to a second end disposed opposite the first end of the housing.

4. The power module of claim 1 wherein the housing defines a through-hole extending from the first side to the second side of the housing.

5. The power module of claim 4, wherein the power module includes a plurality of the control terminals therein, the plurality of control terminals being respectively fixed to the first side of the housing.

6. The power module according to claim 5, wherein the power module comprises four control terminals, and two of the four control terminals are symmetrically arranged on two sides of the through hole.

7. The power module of claim 1, wherein the input terminal, the output terminal, and the control terminal are electrically connected to the chip by means of a lead frame or wire bonding, respectively.

8. The power module of claim 1, wherein the chip is brazed with a copper-clad ceramic substrate using a ceramic copper-clad plate or an active metal; the input terminal and the output terminal are respectively and directly connected to the ceramic copper clad laminate or the active metal brazing copper clad ceramic substrate, and the control terminal is connected to the ceramic copper clad laminate or the active metal brazing copper clad ceramic substrate in a crimping pin mode or a welding mode.

9. The power module of claim 1, wherein the thickness of the housing is 3-25 mm.

10. An inverter power unit comprising a plurality of power modules according to any one of claims 1 to 9, wherein the plurality of power modules are connected in parallel.