CN213212151U - Semiconductor packaging structure - Google Patents
Semiconductor packaging structure Download PDFInfo
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- CN213212151U CN213212151U CN202022772790.9U CN202022772790U CN213212151U CN 213212151 U CN213212151 U CN 213212151U CN 202022772790 U CN202022772790 U CN 202022772790U CN 213212151 U CN213212151 U CN 213212151U
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- chip
- metal bridge
- base island
- lead frame
- heat
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Abstract
The utility model relates to the technical field of power semiconductors, and discloses a semiconductor packaging structure which comprises a lead frame, a chip, a metal bridge, an insulated heat conduction device, a radiating fin, a base island group and a plastic package shell; the chip is located lead frame one side, the first end of metal bridge is located one side that the chip deviates from lead frame, insulating heat-conducting device is located one side that the first end of metal bridge deviates from the chip, the fin is located one side that insulating heat-conducting device deviates from the first end of metal bridge, the base island group includes first base island, first base island is connected with metal bridge second end electricity, the plastic envelope cladding is in lead frame, the chip, the metal bridge, insulating heat-conducting device, fin and base island group outside, and lead frame deviates from the surface of chip and the surface that the fin deviates from the chip exposes in the plastic envelope outside. The semiconductor packaging structure can realize the effect of radiating the upper surface and the lower surface of the chip and can improve the radiating capacity of a semiconductor device.
Description
Technical Field
The utility model relates to a power semiconductor technical field, in particular to semiconductor packaging structure.
Background
At present, in the field of power semiconductors, the packaging of devices includes a single-tube packaging form and an integrated module packaging form, and in the single-tube packaging form, a fully-packaged device and a half-packaged device are included, and for devices with large heat productivity, a half-packaged form is generally adopted, so that the device with small heat productivity has a better heat dissipation effect, and for devices with small heat productivity, a fully-packaged device with relatively poor heat dissipation is generally adopted.
In a single-tube device in a semi-encapsulation mode, TO-3P encapsulation is taken as an example, a heat dissipation mode that a single-side copper frame is exposed is adopted, a radiator needs TO be externally connected during working, and the heat dissipation capacity of the device needs TO be further improved.
SUMMERY OF THE UTILITY MODEL
The utility model provides a semiconductor packaging structure, above-mentioned semiconductor packaging structure can realize the double-sided radiating effect from top to bottom of chip, promotes semiconductor device's heat-sinking capability.
In order to achieve the above purpose, the utility model provides the following technical scheme:
a semiconductor packaging structure comprises a lead frame, a chip, a metal bridge, an insulating heat conduction device, a radiating fin, a base island group and a plastic package shell;
the chip is located lead frame one side, the first end of metal bridge is located the chip deviates from one side of lead frame, insulating heat-conducting device is located the first end of metal bridge deviates from one side of chip, the fin is located insulating heat-conducting device deviates from one side of the first end of metal bridge, base island group includes first base island, first base island with metal bridge second end electricity is connected, the plastic envelope shell cladding in lead frame, chip, metal bridge, insulating heat-conducting device, fin and the base island group outside, just lead frame deviates from the surface of chip with the fin deviates from the surface of chip expose in the plastic envelope shell outside.
The embodiment of the utility model provides an among the semiconductor package structure, one side of chip is provided with lead frame, the opposite side passes through the metal bridge and is connected with first base island electricity, one side that the metal bridge deviates from the chip is provided with insulating heat conduction device and fin, because lead frame deviates from the surface of chip and the surface that the fin deviates from the chip and exposes in the plastic envelope shell outside, can realize the radiating effect of double-sided from top to bottom of chip, the heat that the chip during operation produced, can dispel the heat through upper and lower double-sided lead frame and fin, can promote semiconductor device's heat-sinking capability.
Optionally, the chip is connected to the first end of the metal bridge through a first bonding material.
Optionally, a circle of first protruding corners matched with the chip is formed on the surface of the first end of the metal bridge facing the chip, and the chip is connected with the first end of the metal bridge in an area surrounded by the first protruding corners.
Optionally, a circle of second protruding angles matched with the insulating and heat conducting device is formed on the surface, facing the insulating and heat conducting device, of the first end of the metal bridge, and the insulating and heat conducting device is connected with the first end of the metal bridge in an area surrounded by the second protruding angles.
Optionally, a side of the chip facing the first end of the metal bridge has a first electrode and a second electrode, a side of the chip facing the lead frame has a third electrode, and the first electrode is electrically connected to a side of the first end of the metal bridge facing the chip.
Optionally, the base island group further includes a second base island and a third base island, the second electrode is electrically connected to the second base island, the third electrode is electrically connected to a side of the lead frame facing the chip, and the lead frame is electrically connected to the third base island.
Optionally, the first base island, the second base island and the third base island are respectively provided with a first pin, a second pin and a third pin, and the first pin, the second pin and the third pin are exposed outside the plastic package housing.
Optionally, the metal bridge is a copper bridge.
Optionally, the material of the insulating and heat conducting device is a ceramic material.
Optionally, the material of the heat sink is a heat dissipation metal material or a graphene material.
Drawings
Fig. 1 is a schematic structural diagram of a package structure according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a metal bridge according to an embodiment of the present invention;
fig. 3 is a top view of a metal bridge according to an embodiment of the present invention.
Icon:
1-a lead frame; 2-chip; 3-metal bridges; 31-a first fillet; 32-a second fillet; 4-an insulating heat conducting device; 5-a heat sink; 6-first base island; 7-plastic packaging the shell; 8-a first bonding material; 9-a second binding material; 10-third binding material.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1, the present invention provides a semiconductor package structure, which includes a lead frame 1, a chip 2, a metal bridge 3, an insulating and heat conducting device 4, a heat sink 5, a base island group and a plastic package housing 7;
Above-mentioned embodiment of the utility model provides an among the semiconductor package structure, one side of chip 2 is provided with lead frame 1, the opposite side passes through metal bridge 3 and is connected with 6 electricity in first base island, one side that metal bridge 3 deviates from chip 2 is provided with insulating heat conduction device 4 and fin 5, because lead frame 1 deviates from the surface of chip 2 and fin 5 and deviates from the surface of chip 2 and exposes in the plastic envelope 7 outside, can realize the effect of two-sided radiating about chip 2, the heat that chip 2 during operation produced, can dispel the heat through upper and lower two-sided lead frame 1 and fin 5, can promote semiconductor device's heat-sinking capability.
Specifically, the chip 2 and the first end of the metal bridge 3 may be connected by the first bonding material 8. The chip 2 and the lead frame 1 may be connected to each other by a second bonding material 9. The metal bridge 3 and the first base island 6 may be connected by a third bonding material 10. The material of the first bonding material 8, the second bonding material 9, and the third bonding material 10 may be solder paste, silver paste, or the like, or may be other bonding materials, and is not limited herein according to the actual situation.
Specifically, the material of the lead frame 1 may be a conductive metal, such as a metal material of copper, silver, etc., and is selected according to practical situations and is not limited herein. The lead frame can be used as a carrier of the chip and the integrated circuit thereof, and can be used as a leading-out terminal to be electrically connected with an external lead.
Specifically, the chip 2 may be a semiconductor chip such as an IGBT, an FRD, or a MOSFET, a semiconductor chip such as a third generation semiconductor silicon carbide, or another chip, and is not limited herein.
Specifically, the metal bridge 3 may be a copper bridge, which has excellent electrical and thermal conductivity, and can achieve good electrical connection.
Specifically, the material of the insulating and heat conducting device 4 may be a ceramic material with excellent heat conducting performance, such as aluminum nitride ceramic or silicon nitride ceramic, and may also be other insulating and heat conducting materials, which is not limited herein.
Specifically, the heat sink 5 may be a heat dissipation metal material, such as a metal material with excellent heat dissipation performance, such as copper and aluminum, or may be a material such as graphene, so as to implement the heat dissipation function of the chip.
Specifically, the plastic package housing 7 may be made of epoxy resin, and may be used to encapsulate the entire integrated circuit chip, so as to isolate the influence of the physical environment on the normal operation of the circuit, and to mold the chip in a plastic package manner.
Specifically, as shown in fig. 2, a surface of the first end of the metal bridge 3 facing the chip 2 may be formed with a circle of first protruding corners 31 matching with the chip 2, and the chip 2 is connected to the first end of the metal bridge 3 in an area surrounded by the first protruding corners 31. The arrangement of the first protruding angle 31 can form downward backflow to the first bonding material 8, can effectively reduce glue overflow when the first bonding material 8 and the metal bridge 3 are welded, and meanwhile, the bonding surface is larger and firmer.
Specifically, as shown in fig. 2 and fig. 3, a circle of second protruding angles 32 is formed on the surface of the first end of the metal bridge 3 facing the insulated heat-conducting device 4, and the insulated heat-conducting device 4 is connected to the first end of the metal bridge 3 in an area surrounded by the second protruding angles 32. The second protruding angle 32 can fix the insulating heat-conducting device 4, and can increase the contact surface with the insulating heat-conducting device 4, so as to improve the heat dissipation conductivity and realize the double-sided quick heat conduction.
Specifically, one side of the chip 2 facing the first end of the metal bridge 3 may have a first electrode and a second electrode, one side of the chip 2 facing the lead frame 1 may have a third electrode, the first electrode is electrically connected to one side of the first end of the metal bridge 3 facing the chip 2, so that the chip 2 is electrically connected to the first end of the metal bridge 3, and further, the first electrode of the chip 2 is electrically connected to the first base island 6.
Specifically, the base island group further includes a second base island and a third base island, the second electrode may be electrically connected to the second base island, the third electrode may be electrically connected to a side of the lead frame 1 facing the chip 2, and the lead frame 1 may be electrically connected to the third base island, so that the third electrode is electrically connected to the third base island.
Specifically, the material of the first base island 6, the second base island, and the third base island may be a conductive metal material, for example, a metal material such as copper, silver, and the like, and may also be another conductive metal material, which is not limited herein.
Specifically, the first base island 6, the second base island and the third base island are respectively provided with a first pin, a second pin and a third pin, the first pin, the second pin and the third pin are exposed outside the plastic package casing 7, and the first electrode, the second electrode and the third electrode of the chip 2 can be electrically connected with other external devices through the first pin, the second pin and the third pin.
Specifically, the specific manufacturing process of the semiconductor package structure may include the following steps:
the first step is as follows: the lead frame is electrically connected with the third base island, and the lead frame 1 is printed with a bonding material to realize the connection of the chip 2 and the lead frame 1.
The second step is that: placing the chip 2 on the surface of the bonding material for bonding, wherein one surface of the chip 2 facing the lead frame 1 is provided with a third electrode, and the other surface of the chip 2 is provided with a first electrode and a second electrode;
the third step: the areas of the first electrode and the second electrode are both provided with bonding materials;
the fourth step: the first end of the metal bridge 3 is attached to the area where the first electrode of the chip 2 is located, meanwhile, the second end of the metal bridge 3 is electrically connected with the first base island 6, and the second electrode is electrically connected with the second base island through a lead;
the fifth step: the bonding material is solidified at high temperature, so that the metal bridge 3 and the chip 2 are more fully connected;
and a sixth step: an insulating heat conduction device 4 is arranged on the metal bridge 3, so that the surface of the metal bridge 3, which is far away from the chip 2, is connected with the insulating heat conduction device 4, and the heat transmitted from the chip 2 to the metal bridge 3 is led out;
seventhly, attaching the radiating fin 5 to one side of the insulating heat-conducting device 4, which is far away from the chip 2, so that the heat of the chip 2 can be led out, and the radiating function is realized;
eighth step: the whole chip structure is subjected to plastic package by using epoxy resin to form a plastic package shell 7, the surface of the radiating fin 5, which is far away from the chip 2, the surface of the lead frame 1, which is far away from the chip 2, and the first pin, the second pin and the third pin are exposed out of the plastic package shell 7, and other devices are all positioned in the plastic package shell 7;
the ninth step: the epoxy resin is completely cured to reach a stable state, so that the whole packaging structure becomes firm and reliable;
the tenth step: electroplating to realize tin coating of the first pin, the second pin and the third pin;
the eleventh step: and cutting the ribs of the lead frame 1 and separating the ribs of the plurality of semiconductor devices.
It will be apparent to those skilled in the art that various changes and modifications may be made to the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A semiconductor packaging structure is characterized by comprising a lead frame, a chip, a metal bridge, an insulated heat conduction device, a heat radiating fin, a base island group and a plastic package shell;
the chip is located lead frame one side, the first end of metal bridge is located the chip deviates from one side of lead frame, insulating heat-conducting device is located the first end of metal bridge deviates from one side of chip, the fin is located insulating heat-conducting device deviates from one side of the first end of metal bridge, base island group includes first base island, first base island with metal bridge second end electricity is connected, the plastic envelope shell cladding in lead frame, chip, metal bridge, insulating heat-conducting device, fin and the base island group outside, just lead frame deviates from the surface of chip with the fin deviates from the surface of chip expose in the plastic envelope shell outside.
2. The semiconductor package structure of claim 1, wherein the chip is connected to the first end of the metal bridge by a first bonding material.
3. The semiconductor package structure according to claim 2, wherein a surface of the first end of the metal bridge facing the chip is formed with a circle of first protruding corners matched with the chip, and the chip is connected to the first end of the metal bridge in a region surrounded by the first protruding corners.
4. The semiconductor package structure of claim 1, wherein a surface of the first end of the metal bridge facing the insulating and heat-conducting device is formed with a circle of second protruding corners matching with the insulating and heat-conducting device, and the insulating and heat-conducting device is connected to the first end of the metal bridge in a region surrounded by the second protruding corners.
5. The semiconductor package structure of claim 1, wherein a side of the chip facing the first end of the metal bridge has a first electrode and a second electrode, a side of the chip facing the leadframe has a third electrode, and the first electrode is electrically connected to a side of the first end of the metal bridge facing the chip.
6. The semiconductor package structure of claim 5, wherein the set of base islands further comprises a second base island and a third base island, the second electrode is electrically connected to the second base island, the third electrode is electrically connected to a side of the lead frame facing the chip, and the lead frame is electrically connected to the third base island.
7. The semiconductor package structure according to claim 6, wherein the first base island, the second base island and the third base island respectively have a first pin, a second pin and a third pin thereon, and the first pin, the second pin and the third pin are exposed outside the plastic package.
8. The semiconductor package structure of claim 1, wherein the metal bridge is a copper bridge.
9. The semiconductor package structure of claim 1, wherein the material of the insulating and thermally conductive means is a ceramic material.
10. The semiconductor package structure of claim 1, wherein the material of the heat sink is a heat sink metal material or a graphene material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022772790.9U CN213212151U (en) | 2020-11-26 | 2020-11-26 | Semiconductor packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022772790.9U CN213212151U (en) | 2020-11-26 | 2020-11-26 | Semiconductor packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213212151U true CN213212151U (en) | 2021-05-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022772790.9U Active CN213212151U (en) | 2020-11-26 | 2020-11-26 | Semiconductor packaging structure |
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| Country | Link |
|---|---|
| CN (1) | CN213212151U (en) |
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- 2020-11-26 CN CN202022772790.9U patent/CN213212151U/en active Active
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