CN220796724U - Double-sided half-bridge power module - Google Patents
Double-sided half-bridge power module Download PDFInfo
- Publication number
- CN220796724U CN220796724U CN202322276078.3U CN202322276078U CN220796724U CN 220796724 U CN220796724 U CN 220796724U CN 202322276078 U CN202322276078 U CN 202322276078U CN 220796724 U CN220796724 U CN 220796724U
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- China
- Prior art keywords
- substrate
- power module
- half bridge
- double
- driving chip
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- 239000000758 substrate Substances 0.000 claims abstract description 70
- 230000017525 heat dissipation Effects 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910000570 Cupronickel Inorganic materials 0.000 claims description 2
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 claims description 2
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 2
- 230000009977 dual effect Effects 0.000 claims 2
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The embodiment of the utility model provides a double-sided half-bridge power module, which comprises: the metal lead frame, and the first heat dissipation base plate, the first substrate, the conductive block, the half-bridge driving chip, the second substrate and the second heat dissipation base plate which are sequentially stacked from top to bottom. The top surface of the half-bridge driving chip is electrically connected with the first substrate through the conductive block, the other surface of the half-bridge driving chip is fixedly connected with the second substrate, and the metal lead frame is electrically connected with the second substrate, so that the performance of the half-bridge driving chip can be better played, and the reliability of the half-bridge driving chip is improved. The first radiating bottom plate is attached to the back of the first substrate, the second radiating bottom plate is attached to the back of the second substrate, heat on the substrate can be timely taken away, the working junction temperature of the half-bridge driving chip is improved, the half-bridge driving chip can work more stably in a proper temperature range, and therefore the reliability of the double-sided half-bridge power module is improved.
Description
Technical Field
The utility model relates to the technical field of semiconductor packaging, in particular to a double-sided half-bridge power module.
Background
The traditional SIC power device package is characterized in that an SIC chip is welded on a DBC (Direct Bonding Copper, copper-clad plate), the upper surface of the SIC chip is connected with an independent metal layer in a metal bonding mode, the DBC copper layer is welded on a heat dissipation bottom plate, the heat dissipation bottom plate is directly connected with a shell for heat dissipation, and different layers are connected through solder layers.
Currently, a SIC power device packaging factory discovers that an HPD packaging process cannot exert the maximum advantage of SIC materials, so that the working junction temperature, stray inductance, power cycle reliability and the like of the conventional SIC packaging process are lower.
Disclosure of Invention
The embodiment of the utility model solves the technical problems of high working junction temperature, low stray inductance and low power cycle reliability of the traditional power device by providing the double-sided half-bridge power module.
The present utility model provides a double-sided half-bridge power module according to an embodiment of the present utility model, including: the metal lead frame, and the first radiating bottom plate, the first substrate, the conductive block, the half-bridge driving chip, the second substrate and the second radiating bottom plate which are sequentially stacked from top to bottom;
the top surface of the half-bridge driving chip is electrically connected with the first substrate through the conductive block; the other surface of the half-bridge driving chip is fixedly connected with the front surface of the second substrate; the first radiating bottom plate is attached to the back surface of the first substrate; the second heat dissipation bottom plate is attached to the back surface of the second substrate; the metal lead frame is electrically connected with the second substrate.
Optionally, the half-bridge driving chip includes a plurality of, every half-bridge driving chip's top surface all through the conducting block with first base plate electric connection, every half-bridge driving chip's another side all with the front fixed connection of second base plate.
Optionally, the half-bridge driving chip is covered with an insulating layer, and the conductive block is located in the insulating layer.
Optionally, the insulating layer further wraps the first substrate, the second substrate and the area where the second substrate and the metal lead frame are welded; the remaining area of the metal lead frame is exposed outside the insulating layer.
Optionally, the metal lead frame is made of copper or copper gold-plated.
Optionally, the first heat dissipation bottom plate and the second heat dissipation bottom plate are both provided with a plurality of fins or a plurality of unconnected protrusions.
Optionally, the materials of the first heat dissipation bottom plate and the second heat dissipation bottom plate are copper nickel plating.
Optionally, the first substrate and the second substrate comprise AMB insulating ceramic substrates.
Optionally, the conductive block is made of molybdenum.
Optionally, the half-bridge driver chip includes a silicon carbide half-bridge driver chip.
One or more technical solutions provided in the embodiments of the present utility model at least have the following technical effects or advantages:
the double-sided half-bridge power module provided by the embodiment of the utility model comprises: the metal lead frame, and the first heat dissipation base plate, the first substrate, the conductive block, the half-bridge driving chip, the second substrate and the second heat dissipation base plate which are sequentially stacked from top to bottom. The top surface of the half-bridge driving chip is electrically connected with the first substrate through the conductive block, the other surface of the half-bridge driving chip is fixedly connected with the second substrate, and the metal lead frame is electrically connected with the second substrate. The first radiating bottom plate is attached to the back of the first substrate, the second radiating bottom plate is attached to the back of the second substrate, heat on the substrate can be timely taken away, the working junction temperature of the half-bridge driving chip is improved, the half-bridge driving chip can work more stably in a proper temperature range, and therefore the reliability of the double-sided half-bridge power module is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional view of a two-sided half-bridge power module structure in an embodiment of the utility model;
fig. 2 is a schematic diagram of a distribution of half-bridge driving chips on a second substrate according to an embodiment of the utility model.
Detailed Description
The embodiment of the utility model solves the technical problems of high working junction temperature, low stray inductance and low power cycle reliability of the traditional power device by providing the double-sided half-bridge power module.
In order to better understand the above technical solutions, the following detailed description will refer to the accompanying drawings and specific embodiments.
First, the term "and/or" appearing herein is merely an association relationship describing associated objects, meaning that there may be three relationships, e.g., a and/or B, may represent: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present utility model and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the utility model described herein may be capable of operation in sequences other than those illustrated or otherwise described.
Referring to fig. 1-2, according to an embodiment of the present utility model, a double-sided half-bridge power module is provided, the double-sided half-bridge power module includes: the metal lead frame 100 and the first heat dissipation base plate 200, the first substrate 300, the conductive block 400, the half-bridge driving chip 500, the second substrate 600 and the second heat dissipation base plate 700, which are stacked in this order from top to bottom.
A plurality of half-bridge driving chips 500 may be disposed on the second substrate 600, wherein a top surface of each half-bridge driving chip 500 is electrically connected with the first substrate 300 through the conductive block 400, and another surface of each half-bridge driving chip 500 is fixedly connected with the second substrate 600. The first heat radiation chassis 200 is bonded to the back surface of the first substrate 300, and the second heat radiation chassis 700 is bonded to the back surface of the second substrate 600.
As an alternative embodiment, the half-bridge driving chips 500 may include a plurality of half-bridge driving chips 500, each of which has a top surface electrically connected to the first substrate 300 through the conductive bumps 400, and the other surface of each of the half-bridge driving chips 500 is fixedly connected to the front surface of the second substrate 600.
The drains of the half-bridge driver chips 500 may be electrically connected by metal wires, which may be made of copper or gold.
The metal lead frame 100 is electrically connected to the second substrate 600, and the material of the metal lead frame includes copper or copper gold plating.
The conductive block 400 may be a molybdenum block or a silver block, and the metal molybdenum block is used as an electrical connection of the source electrode, so that stray inductance of the module can be reduced. The first substrate may serve as a ground for the half-bridge driving chip 500.
The other side of each half-bridge driver chip 500 may be fixed to the second substrate 600 using solder bonding.
As an alternative embodiment, the first substrate 300 and the second substrate 600 may include AMB (Active Metal Brazing ) insulating ceramic substrates. The insulating ceramic material may be silicon nitride or aluminum nitride.
The half-bridge driving chip 500 may be a third generation wide bandgap semiconductor chip, for example, the half-bridge driving chip 500 may be a gallium nitride half-bridge driving chip or a silicon carbide half-bridge driving chip.
In order to improve the service life of the double-sided half-bridge power module, the half-bridge driving chip 500 may be covered with the insulating layer 800, and the conductive block 400 is also covered in the insulating layer 800, so as to avoid the conductive block 400 from being corroded and oxidized.
Of course, in order to protect the first substrate 300, the second substrate 600 and the metal lead frame 100, the insulating layer 800 may also encapsulate the first substrate 300, the second substrate 600 and the area where the second substrate 600 and the metal lead frame 100 are welded, and only the remaining area of the metal lead frame 100 is exposed outside the insulating layer 800, so that the electrical performance of the double-sided half-bridge power module may be led out.
The insulating layer 800 may be manufactured by plastic packaging with epoxy resin.
In order to further reduce the working junction temperature of the double-sided half-bridge power module, a plurality of fins or a plurality of unconnected protrusions may be disposed on the first heat dissipation substrate 200 and the second heat dissipation substrate 700. By arranging a plurality of fins or a plurality of unconnected protrusions, the heat dissipation area of the first heat dissipation base plate 200 and the second heat dissipation base plate 700 can be increased, and the overall heat dissipation capacity of the double-sided half-bridge power module is further improved, so that the working junction temperature of the double-sided half-bridge power module is reduced.
It is understood that the first and second heat dissipation substrates 200 and 700 may be made of metallic copper, and nickel may be plated on the surfaces of the first and second heat dissipation substrates 200 and 700 in order to prevent the first and second heat dissipation substrates 200 and 700 from being oxidized to reduce heat dissipation capacity.
While preferred embodiments of the present utility model have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the utility model.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present utility model without departing from the spirit or scope of the utility model. Thus, it is intended that the present utility model also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. A double sided half bridge power module, comprising: the metal lead frame, and the first radiating bottom plate, the first substrate, the conductive block, the half-bridge driving chip, the second substrate and the second radiating bottom plate which are sequentially stacked from top to bottom;
the top surface of the half-bridge driving chip is electrically connected with the first substrate through the conductive block, and the other surface of the half-bridge driving chip is fixedly connected with the front surface of the second substrate; the first radiating bottom plate is attached to the back surface of the first substrate; the second heat dissipation bottom plate is attached to the back surface of the second substrate; the metal lead frame is electrically connected with the second substrate.
2. The dual sided half bridge power module of claim 1, wherein the half bridge driver chips comprise a plurality of half bridge driver chips, a top surface of each half bridge driver chip is electrically connected with the first substrate through the conductive block, and another surface of each half bridge driver chip is fixedly connected with a front surface of the second substrate.
3. The double-sided half bridge power module of claim 1 or 2, wherein the half bridge driver chip is covered with an insulating layer and the conductive block is located within the insulating layer.
4. The double sided half bridge power module of claim 3, wherein the insulating layer further encapsulates the first substrate, the second substrate, and the area where the second substrate is soldered to the metal lead frame;
the remaining area of the metal lead frame is exposed outside the insulating layer.
5. The double sided half bridge power module of claim 4, wherein the metal lead frame is copper or copper gold plated.
6. The double-sided half bridge power module of claim 5, wherein the first heat sink base and the second heat sink base are each provided with a plurality of fins or a plurality of discrete protrusions.
7. The double-sided half-bridge power module of claim 6, wherein the first heat sink base and the second heat sink base are copper-nickel plated.
8. The double sided half bridge power module of claim 7, wherein the first substrate and the second substrate comprise AMB insulating ceramic substrates.
9. The double sided half bridge power module of claim 7, wherein the conductive block is molybdenum.
10. The dual sided half bridge power module of claim 7, wherein the half bridge driver chip comprises a silicon carbide half bridge driver chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322276078.3U CN220796724U (en) | 2023-08-22 | 2023-08-22 | Double-sided half-bridge power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322276078.3U CN220796724U (en) | 2023-08-22 | 2023-08-22 | Double-sided half-bridge power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220796724U true CN220796724U (en) | 2024-04-16 |
Family
ID=90661442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322276078.3U Active CN220796724U (en) | 2023-08-22 | 2023-08-22 | Double-sided half-bridge power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220796724U (en) |
-
2023
- 2023-08-22 CN CN202322276078.3U patent/CN220796724U/en active Active
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