CN216849941U - Novel reverse-conducting gallium nitride power device - Google Patents
Novel reverse-conducting gallium nitride power device Download PDFInfo
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- CN216849941U CN216849941U CN202220251472.4U CN202220251472U CN216849941U CN 216849941 U CN216849941 U CN 216849941U CN 202220251472 U CN202220251472 U CN 202220251472U CN 216849941 U CN216849941 U CN 216849941U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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Abstract
The utility model discloses a novel gallium nitride power device capable of conducting reversely, which comprises a frame, wherein one end of the frame is provided with a plurality of gate poles and Kelvin source electrodes, and the other end of the frame is provided with a drain electrode; the heat dissipation plate is arranged on the frame; the gallium nitride chip is arranged on the heat dissipation plate and comprises a source routing disc, a drain routing disc and a plurality of gate routing discs, wherein the source routing disc is connected with the Kelvin source, the drain routing disc is connected with the drain, and the gate routing disc is connected with the gate; and the diode is arranged on the heat radiating plate and is provided with a cathode routing disc, and the cathode routing disc is connected with the drain electrode. The utility model discloses can shorten the wire length between the parallel device to reduce because PCB walks parasitic resistance and inductance that the line brought, avoid influencing the performance of whole module.
Description
Technical Field
The utility model relates to a power semiconductor device technical field, concretely relates to novel reverse conduction gallium nitride power device.
Background
As a third-generation semiconductor material, the gallium nitride power device has the advantages of large forbidden band width, high breakdown field strength, high thermal conductivity, strong radiation resistance, stable chemical property, high power density and the like, and can realize higher switching frequency and higher system efficiency and power density; gallium nitride semiconductors are capable of withstanding higher currents and higher voltages than silicon.
In practical applications, since the loss of the gan chip in reverse conduction is large but there is no body diode to reduce the loss, a diode needs to be connected in parallel, as shown in fig. 3, to reduce the power loss of the gan chip in reverse conduction, and to allow current to flow from the source to the drain of the device. However, in the prior art, the diode is connected to the gan chip through the PCB, which results in a long wire between the gan chip and the diode, which is liable to generate parasitic parameters in the circuit, thereby affecting the performance of the whole module.
Therefore, there is a need for a gan power device that can reduce parasitic parameters of the circuit due to long wires.
SUMMERY OF THE UTILITY MODEL
Therefore, the technical problem to be solved by the present invention is to overcome the parasitic parameters caused by longer conducting wires in the prior art.
In order to solve the above technical problem, the utility model provides a novel reverse conduction gallium nitride power device, include:
the device comprises a frame, a plurality of grid electrodes and Kelvin source electrodes, a plurality of grid electrodes and a plurality of grid electrodes, wherein one end of the frame is provided with a drain electrode;
the heat dissipation plate is arranged on the frame;
the gallium nitride chip is arranged on the heat dissipation plate and comprises a source routing disc, a drain routing disc and a plurality of gate routing discs, the source routing disc is connected with the Kelvin source, the drain routing disc is connected with the drain, and the gate routing disc is connected with the gate;
the diode is arranged on the heat dissipation plate, a cathode routing disc is arranged on the diode, and the cathode routing disc is connected with the drain electrode;
the gallium nitride power device is formed by packaging the gallium nitride chip, the diode and the heat dissipation plate in the frame.
As an optimized mode of the present invention, the number of the gate routing discs is consistent with the number of the gate, and each gate routing disc is connected to one gate.
As a preferred mode of the present invention, the source of the gallium nitride chip is connected to the anode of the diode through a heat sink.
As an optimal mode of the present invention, the source wire bonding pad is connected to the kelvin source through the lead.
As an optimized mode of the utility model, the gate pole routing disc is connected with the gate pole through a lead wire.
As an optimized mode of the present invention, the drain routing disc is connected to the drain through a plurality of leads.
As an optimized mode of the present invention, the cathode routing disc is connected to the drain through the lead.
As an optimized mode of the present invention, the drain wire bonding pad of the gan chip is connected to the cathode wire bonding pad of the diode through the drain.
In a preferred embodiment of the present invention, the source and the substrate of the gallium nitride chip are shared by the heat sink.
As a preferred embodiment of the present invention, the gallium nitride chip and the diode are fixedly connected to the heat dissipation plate.
Compared with the prior art, the technical scheme of the utility model have following advantage:
a novel reverse conduction gallium nitride power device, through encapsulating gallium nitride chip, diode and heating panel in the frame, then as whole overall arrangement on the PCB board, can reduce whole shared PCB board area like this, can also shorten the wire length between the parallel device to reduce because PCB walks parasitic resistance and inductance that the line brought, avoid influencing the performance of whole module.
Drawings
In order to make the content of the present invention more clearly understood, the present invention will be described in further detail with reference to the following embodiments of the present invention, in conjunction with the accompanying drawings.
Fig. 1 is a schematic diagram of the positions of the gallium nitride chip and the diode according to the present invention.
Fig. 2 is a schematic diagram of wire bonding between a gan chip and a diode according to the present invention.
Fig. 3 is a schematic diagram of a parallel connection of a gallium nitride chip and a diode in the art.
The specification reference numbers indicate: 1. the structure comprises a frame, 2, a gallium nitride chip, 3, a diode, 4, a heat dissipation plate, 10, a first gate, 11, a second gate, 12, a first Kelvin source, 13, a second Kelvin source, 14, a drain, 20, a source bonding pad, 21, a drain bonding pad, 22, a first gate bonding pad, 23, a second gate bonding pad, 30 and a cathode bonding pad.
Detailed Description
The present invention is further described with reference to the following drawings and specific embodiments so that those skilled in the art can better understand the present invention and can implement the present invention, but the embodiments are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "second" or "first" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
Unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features, or indirectly contacting the first and second features through intervening media. Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements does not include a limitation to the listed steps or elements but may alternatively include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Referring to fig. 1-2, the present invention provides a novel embodiment of a reverse conducting gan power device, which includes a frame 1, wherein a gan chip 2 and a diode 3 are packaged in the frame 1.
Wherein the gallium nitride chip 2 and the diode 3 are encapsulated in a frame 1 as a whole; such packages include, but are not limited TO, surface mount packages (DFNs), in-line packages (TOs), Flip-chips (Flip-chip), and the like; one end of the frame 1 is provided with a plurality of gate electrodes and Kelvin source electrodes, and the other end of the frame 1 is provided with a drain electrode 14.
The two gate electrodes and the two Kelvin source electrodes are respectively provided and are divided into a first gate electrode 10, a second gate electrode 11, a first Kelvin source electrode 12 and a second Kelvin source electrode 13; the first gate 10, the first kelvin source 12, the second kelvin source 13 and the second gate 11 are sequentially arranged at one end of the frame 1 to form a symmetrical pin structure.
Preferably, the gallium nitride chip 2 includes a source routing disc 20, a drain routing disc 21 and a plurality of gate routing discs, and the gate routing discs include a first gate routing disc 22 and a second gate routing disc 23.
The gallium nitride epitaxial wafer contained in the gallium nitride chip 2 is produced by a method generally comprising an aluminum nitride nucleation layer, a gallium nitride buffer layer, a gallium nitride channel layer, an aluminum gallium nitride barrier layer and a p-type gallium nitride gate layer; the source routing disc 20 is respectively connected with the first Kelvin source 12 and the second Kelvin source 13 of the frame 1 through leads, and the drain routing disc 21 is connected with the drain 14 of the frame 1 through a plurality of leads; the first gate routing disc 22 is connected with the first gate 10 of the frame 1 through a lead wire, and the second gate routing disc 23 is connected with the second gate 11 of the frame 1 through a lead wire, namely, one gate routing disc is connected with one gate of the frame 1 through a lead wire.
Preferably, the diode 3 is provided with a cathode bonding pad 30.
Wherein, the diode 3 adopts materials including but not limited to silicon, silicon carbide and the like; the cathode bonding pad 30 is connected to the drain 14 of the frame 1 through a lead, that is, the drain 14 of the frame 1 connects the drain bonding pad 21 of the gan chip 2 and the cathode bonding pad 30 of the diode 3, respectively.
Preferably, the heat dissipation plate device further comprises a heat dissipation plate 4, and the heat dissipation plate 4 is arranged in the frame 1.
Wherein, the heat dissipation plate 4 includes but not limited to a metal plate, a non-metal plate, etc.; the source and the substrate of the gallium nitride chip 2 are shared by the heat dissipation plate 4, and the anode of the diode 3 is connected with the heat dissipation plate 4, namely the source of the gallium nitride chip 2 is connected with the anode of the diode 3 through the heat dissipation plate 4; the gallium nitride chip 2 and the diode 3 are fixedly connected to the heat dissipation plate 4, including but not limited to, being adhered and fixed by an insulating glue, a solder paste, etc.
Preferably, the assembling process of the gallium nitride power device is as follows:
the source electrode of the gallium nitride chip 2 and the anode electrode of the diode 3 are connected through a heat radiation plate 4;
connecting a first gate routing disc 22 of the gallium nitride chip 2 with a first gate 10 through a lead, and connecting a second gate routing disc 23 of the gallium nitride chip 2 with a second gate 11 through a lead;
the source bonding pad 20 of the gallium nitride chip 2 is respectively connected with the first Kelvin source 12 and the second Kelvin source 13 of the frame 1 through leads;
connecting the drain electrode routing disc 21 of the gallium nitride with the drain electrode 14 of the frame 1, and connecting the cathode routing disc 30 of the diode 3 with the drain electrode 14 of the frame 1;
the gallium nitride chip 2 and the diode 3 are packaged into the frame 1 as a whole to form a gallium nitride power device, and then the gallium nitride power device is arranged on the PCB.
After the gan chips 2 and the diodes 3 are packaged in the frame 1, the gan chips 2 and the diodes 3 need to be screened to remove the gan chips 2 and the diodes 3 that are damaged in the packaging process.
Compared with the prior art, the technical scheme of the utility model have following advantage:
a novel reverse conduction gallium nitride power device, through encapsulating gallium nitride chip, diode and heating panel in the frame, then as whole overall arrangement on the PCB board, can reduce whole shared PCB board area like this, can also shorten the wire length between the parallel device to reduce because PCB walks parasitic resistance and inductance that the line brought, avoid influencing the performance of whole module.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious changes and modifications can be made without departing from the scope of the invention.
Claims (10)
1. A novel reverse-conducting gallium nitride power device is characterized by comprising:
the device comprises a frame, a plurality of grid electrodes and Kelvin source electrodes, a plurality of grid electrodes and a plurality of grid electrodes, wherein one end of the frame is provided with a drain electrode;
the heat dissipation plate is arranged on the frame;
the gallium nitride chip is arranged on the heat dissipation plate and comprises a source routing disc, a drain routing disc and a plurality of gate routing discs, the source routing disc is connected with a Kelvin source, the drain routing disc is connected with a drain, and the gate routing disc is connected with a gate;
the diode is arranged on the heat dissipation plate, a cathode routing disc is arranged on the diode, and the cathode routing disc is connected with the drain electrode;
the gallium nitride power device is formed by packaging the gallium nitride chip, the diode and the heat dissipation plate in the frame.
2. The device of claim 1, wherein the number of gate bonding pads is the same as the number of gates, and each gate bonding pad is connected to a gate.
3. The novel reverse-conducting gallium nitride power device as claimed in claim 1, wherein the source of the gallium nitride chip is connected to the anode of the diode through a heat sink.
4. The device as claimed in claim 1, wherein the source bonding pad is connected to the kelvin source via a wire.
5. The device of claim 1, wherein the gate bonding pad is connected to the gate by a wire.
6. The device of claim 1, wherein the drain bonding pad is connected to the drain via a plurality of leads.
7. The device as claimed in claim 6, wherein the cathode bonding pad is connected to the drain via a lead.
8. The device as claimed in claim 7, wherein the bonding pad of the drain electrode of the GaN chip is connected to the bonding pad of the cathode electrode of the diode via the drain electrode.
9. The device as claimed in claim 1, wherein the source and the substrate of the GaN chip are shared with a heat sink.
10. The novel reverse-conducting GaN power device as claimed in claim 1, wherein the GaN chip and the diode are fixedly connected to the heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220251472.4U CN216849941U (en) | 2022-02-07 | 2022-02-07 | Novel reverse-conducting gallium nitride power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220251472.4U CN216849941U (en) | 2022-02-07 | 2022-02-07 | Novel reverse-conducting gallium nitride power device |
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| CN216849941U true CN216849941U (en) | 2022-06-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202220251472.4U Active CN216849941U (en) | 2022-02-07 | 2022-02-07 | Novel reverse-conducting gallium nitride power device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115050656A (en) * | 2022-07-12 | 2022-09-13 | 南京芯干线科技有限公司 | Gallium nitride power device integrated with freewheeling diode and packaging method |
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2022
- 2022-02-07 CN CN202220251472.4U patent/CN216849941U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115050656A (en) * | 2022-07-12 | 2022-09-13 | 南京芯干线科技有限公司 | Gallium nitride power device integrated with freewheeling diode and packaging method |
| CN115050656B (en) * | 2022-07-12 | 2024-01-19 | 南京芯干线科技有限公司 | Gallium nitride power device integrated with flywheel diode and packaging method |
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