CN220895500U - Semiconductor power module - Google Patents
Semiconductor power module Download PDFInfo
- Publication number
- CN220895500U CN220895500U CN202322501932.1U CN202322501932U CN220895500U CN 220895500 U CN220895500 U CN 220895500U CN 202322501932 U CN202322501932 U CN 202322501932U CN 220895500 U CN220895500 U CN 220895500U
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- China
- Prior art keywords
- metallized ceramic
- substrate
- power module
- semiconductor
- copper layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000000919 ceramic Substances 0.000 claims abstract description 40
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 230000017525 heat dissipation Effects 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 238000012858 packaging process Methods 0.000 description 3
- 239000012945 sealing adhesive Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a semiconductor power module, which relates to the technical field of power modules and comprises the following components: the upper surface of the radiating substrate is connected with a plurality of metallized ceramic substrates; the anodes of the semiconductor chips are connected with the corresponding emitter of the metallized ceramic substrate through bonding wires; the shell is sleeved on the outer side of the heat dissipation substrate, a plurality of power terminals are arranged along the edge of the shell, each power terminal corresponds to each metallized ceramic substrate respectively, and each power terminal is connected with the emitter of the corresponding metallized ceramic substrate through an aluminum strip. The aluminum tape bonding has the beneficial effects that the aluminum tape bonding is one of the technical methods for increasing the overcurrent capacity, enhancing the conductivity and improving the reliability in the integrated circuit package, and the aluminum tape bonding is used for realizing the connection between the power terminal and the metallized ceramic substrate, so that the overcurrent capacity and the conductivity of the integrated circuit package can be improved to a greater extent.
Description
Technical Field
The present disclosure relates to power modules, and particularly to a semiconductor power module.
Background
A power module is a semiconductor package used in a power electronic circuit, for example, a module in which an Insulated Gate Bipolar Transistor (IGBT) chip or a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) chip is packaged. Some modules are also provided with a semiconductor DIODE (DIODE) chip for overvoltage protection, the above power semiconductor chip having a range of voltage and current levels to accommodate applications in a variety of different situations or industries.
In the conventional power device packaging process, aluminum wires are generally used to connect the power terminals arranged on the housing with the metallized ceramic substrate, but in order to further improve the overcurrent capability between the power terminals and the metallized ceramic substrate, enhance the conductivity and enhance the reliability of the module, a new method is needed to replace the conventional aluminum wire bonding process because of lower overcurrent capability and poorer conductivity.
Disclosure of utility model
In view of the problems existing in the prior art, the present utility model provides a semiconductor power module, comprising:
The upper surface of the radiating substrate is connected with a plurality of metallized ceramic substrates;
The anodes of the semiconductor chips are connected with the corresponding emitter of the metallized ceramic substrate through bonding wires;
The shell is sleeved on the outer side of the heat dissipation substrate, a plurality of power terminals are arranged along the edge of the shell, each power terminal corresponds to each metallized ceramic substrate respectively, and each power terminal is connected with the corresponding emitter of the metallized ceramic substrate through an aluminum belt.
Preferably, each metallized ceramic substrate is arranged side by side along the length direction of the heat dissipation substrate.
Preferably, the total area of each metallized ceramic substrate is smaller than the total area of the heat dissipation substrate.
Preferably, each of the metallized ceramic substrates includes:
The back copper layer, the middle ceramic layer and the surface copper layer are sequentially connected from bottom to top;
the back copper layer is welded with the upper surface of the heat dissipation substrate through solder;
The semiconductor chip and the emitter electrode on the surface copper layer are soldered by solder.
Preferably, the bonding wire is a soft aluminum wire.
Preferably, an emitter copper layer is coated on the surface of the emitter, and the anode of each semiconductor chip is connected with the emitter copper layer through the bonding wire in an ultrasonic bonding mode.
Preferably, the outer shell and the outer side of the heat dissipation substrate are adhered through a sealing adhesive.
The technical scheme has the following advantages or beneficial effects: aluminum ribbon bonding is one of the technical methods for increasing overcurrent capacity, enhancing conductivity and improving reliability in integrated circuit packaging, and the aluminum ribbon bonding is used for realizing connection between a power terminal and a metallized ceramic substrate, so that the overcurrent capacity and the conductivity of the integrated circuit package can be improved to a greater extent.
Drawings
FIG. 1 is a schematic diagram of a semiconductor power module according to a preferred embodiment of the present utility model;
Fig. 2 is a schematic cross-sectional view of a semiconductor power module according to a preferred embodiment of the utility model.
Detailed Description
The utility model will now be described in detail with reference to the drawings and specific examples. The present utility model is not limited to the embodiment, and other embodiments may fall within the scope of the present utility model as long as they conform to the gist of the present utility model.
In a preferred embodiment of the present utility model, based on the above-mentioned problems occurring in the prior art, there is now provided a semiconductor power module, as shown in fig. 1 and 2, comprising:
A plurality of metallized ceramic substrates 2 are connected to the upper surface of the heat dissipation substrate 1;
The emitters of the metallized ceramic substrates 2 are respectively provided with a plurality of semiconductor chips 3, and the anodes of the semiconductor chips 3 are connected with the corresponding emitters 21 of the metallized ceramic substrates 2 through bonding wires 4;
The shell 5 is sleeved on the outer side of the heat dissipation substrate 1, a plurality of power terminals 6 are arranged along the edge of the shell 5, each power terminal 6 corresponds to each metallized ceramic substrate 2, and each power terminal 6 is connected with the corresponding emitter of the metallized ceramic substrate 2 through an aluminum belt 7.
In particular, in the conventional power device packaging process, aluminum wires are generally used to connect the power terminals disposed on the housing with the metallized ceramic substrate, and because the conventional aluminum wire bonding process has low overcurrent capability and poor conductivity, a new method is needed to replace the conventional aluminum wire bonding process, so that the performance of the conventional power device packaging process is improved. The aluminum ribbon 7 bonding is one of technical methods for realizing the increase of overcurrent capability, the enhancement of conductivity and the improvement of reliability in the integrated circuit package, and the aluminum ribbon 7 bonding is used for realizing the connection between the power terminal 6 and the metallized ceramic substrate 2, so that the overcurrent capability and the conductivity of the integrated circuit package can be improved to a large extent.
In a preferred embodiment of the present utility model, as shown in fig. 1, each of the metallized ceramic substrates 2 is arranged side by side along the length direction of the heat dissipating substrate 1.
In a preferred embodiment of the present utility model, the total area of each metallized ceramic substrate 2 is smaller than the total area of the heat dissipating substrate 1.
Specifically, in this embodiment, as shown in fig. 1, a plurality of metallized ceramic substrates 2 are disposed on a heat dissipation substrate 1, and are arranged side by side along the length direction of the heat dissipation substrate 1, so that the overall structure is compact, which is conducive to reducing the volume of a power module, and the bonding wires 4 can be uniformly and neatly routed, which is convenient for maintenance, the total area of the metallized ceramic substrates 2 is smaller than that of the heat dissipation substrate 1, and all the metallized ceramic substrates 2 are partially connected to the heat dissipation substrate 1, so that the whole power module can be ensured to have a good heat dissipation effect.
In a preferred embodiment of the present utility model, each of the metallized ceramic substrates 2 comprises:
a back copper layer 21, an intermediate ceramic layer 22 and a surface copper layer 23 which are sequentially connected from bottom to top;
the back copper layer 21 and the upper surface of the heat dissipation substrate 1 are soldered by solder;
The emitters on the semiconductor chip 3 and the surface copper layer 23 are soldered by means of solder.
In a preferred embodiment of the present utility model, the bonding wire 4 is a soft aluminum wire.
Specifically, in this embodiment, the connection requirement between the semiconductor chip 3 and the metallized ceramic substrate is not high, and the connection requirement between the power terminal and the metallized ceramic substrate is not high, so all the bonding wires 4 can be aluminum wires, and a part of material cost is saved.
In a preferred embodiment of the present utility model, an emitter copper layer is coated on the surface of the emitter, and the anode of each semiconductor chip 3 connects the bonding wire to the emitter copper layer by ultrasonic bonding.
In a preferred embodiment of the present utility model, the housing 5 is adhered to the outer side of the heat dissipating substrate 1 by a sealing adhesive.
Specifically, in this embodiment, the outer casing 5 is glued with the outer side of the heat dissipation substrate 1 by using a sealing adhesive, so that the structure is more stable, and the overall structural strength of the power module is enhanced.
The foregoing description is only illustrative of the preferred embodiments of the present utility model and is not to be construed as limiting the scope of the utility model, and it will be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the description and drawings, and are intended to be included within the scope of the present utility model.
Claims (7)
1. A semiconductor power module, comprising:
The upper surface of the radiating substrate is connected with a plurality of metallized ceramic substrates;
The anodes of the semiconductor chips are connected with the corresponding emitter of the metallized ceramic substrate through bonding wires;
The shell is sleeved on the outer side of the heat dissipation substrate, a plurality of power terminals are arranged along the edge of the shell, each power terminal corresponds to each metallized ceramic substrate respectively, and each power terminal is connected with the corresponding emitter of the metallized ceramic substrate through an aluminum belt.
2. The semiconductor power module of claim 1 wherein each of said metallized ceramic substrates is arranged side-by-side along a length of said heat dissipating substrate.
3. The semiconductor power module of claim 1 wherein a total area of each of the metallized ceramic substrates is less than a total area of the heat dissipating substrate.
4. The semiconductor power module of claim 1 wherein each of said metallized ceramic substrates comprises:
The back copper layer, the middle ceramic layer and the surface copper layer are sequentially connected from bottom to top;
the back copper layer is welded with the upper surface of the heat dissipation substrate through solder;
The semiconductor chip and the emitter electrode on the surface copper layer are soldered by solder.
5. The semiconductor power module of claim 1, wherein the bond wire is a soft aluminum wire.
6. The semiconductor power module of claim 1, wherein the surface of the emitter electrode is covered with an emitter copper layer, and the anode of each semiconductor chip connects the bonding wire to the emitter copper layer by ultrasonic bonding.
7. The semiconductor power module of claim 1, wherein the outer shell is bonded to the outside of the heat dissipating substrate by a seal adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322501932.1U CN220895500U (en) | 2023-09-14 | 2023-09-14 | Semiconductor power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322501932.1U CN220895500U (en) | 2023-09-14 | 2023-09-14 | Semiconductor power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220895500U true CN220895500U (en) | 2024-05-03 |
Family
ID=90843015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322501932.1U Active CN220895500U (en) | 2023-09-14 | 2023-09-14 | Semiconductor power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220895500U (en) |
-
2023
- 2023-09-14 CN CN202322501932.1U patent/CN220895500U/en active Active
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