CN114628375A - Crimping type semiconductor sub-module and module - Google Patents
Crimping type semiconductor sub-module and module Download PDFInfo
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- CN114628375A CN114628375A CN202011464686.1A CN202011464686A CN114628375A CN 114628375 A CN114628375 A CN 114628375A CN 202011464686 A CN202011464686 A CN 202011464686A CN 114628375 A CN114628375 A CN 114628375A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Die Bonding (AREA)
Abstract
The invention provides a crimping type semiconductor sub-module, which comprises a second conducting strip, wherein the second conducting strip is connected with a plurality of semiconductor chips, each semiconductor chip is connected with a first conducting strip, the first conducting strip is connected with an emitter/source electrode of the semiconductor chip, the second conducting strip is connected with a collector/drain electrode of the semiconductor chip, the emitter/source electrode and the collector/drain electrode are respectively arranged on two opposite surfaces of the semiconductor chip, the second conducting strip is also provided with an outer frame, the outer frame is provided with a plurality of grooves, and the semiconductor chip is arranged in the grooves; the crimping type semiconductor sub-module provided by the invention has small processing difficulty, can simplify the process flow, improve the overall stability and reliability of the module and reduce the failure risk on the physical layer of the internal structure.
Description
Technical Field
The invention belongs to the technical field of power semiconductor devices, and particularly relates to a crimping type semiconductor sub-module and a module.
Background
The insulated gate bipolar transistor has good characteristics and wide application fields due to the combination of the advantages of the power transistor and the power field effect transistor. The compression joint type semiconductor module is used as a common packaging mode of the IGBT module and has the characteristics of double-sided heat dissipation, wider Safe Operating Area (SOA), higher operating junction temperature, no welding layer, no lead bonding, high reliability and the like. Especially, the special characteristic of the failure Short circuit (Fail-to-Short) makes the device have very obvious competitive advantages in the application fields of direct series connection of devices in the flexible direct current transmission converter valve, harsh application environment, railway locomotive main converter with high reliability requirement and the like compared with BJT thyristors and traditional lead bonding/welding type IGBT modules.
Each semiconductor chip of the existing compression joint type semiconductor sub-module needs to be connected with an independent emitting electrode molybdenum sheet and an independent collecting electrode molybdenum sheet, so that the precision requirement is high, and the processing difficulty is high; the sub-modules formed by single semiconductor chips need to be packaged and tested one by one, and the packaging efficiency and the testing efficiency are low; each sub-module formed by the chips needs insulation protection and matched creepage distance, so that the space utilization rate is low, and the size and the weight of the compression joint type semiconductor device are correspondingly increased; when the uneven condition appears in outside pressure equipment power, the electric current that flows in from the collecting electrode can not flow in the regional single chip submodule group of uneven pressure, makes the device inefficacy more appear more easily, has increased the requirement of single chip submodule group device to pressure balance.
Disclosure of Invention
The invention aims to solve the technical problem of providing a crimping type semiconductor sub-module and a module, which have small processing difficulty, can simplify the process flow, improve the overall stability and reliability of the module and reduce the failure risk on the physical layer of an internal structure.
In order to achieve the above object, according to the technical scheme of the present invention, a crimping type semiconductor sub-module includes a second conductive sheet, the second conductive sheet is connected to a plurality of semiconductor chips, each semiconductor chip is connected to a first conductive sheet, the first conductive sheet is connected to an emitter/source of the semiconductor chip, the second conductive sheet is connected to a collector/drain of the semiconductor chip, the emitter/source and the collector/drain are respectively disposed on two opposite sides of the semiconductor chip, the second conductive sheet is further provided with an outer frame, the outer frame is provided with a plurality of grooves, and the semiconductor chips are disposed in the grooves.
Preferably, the semiconductor chip is at least one of an IGBT chip, a MOSFET chip, an FRD chip, or an SBD chip.
Preferably, the semiconductor chip is an IGBT chip, a gate of the IGBT chip is connected to a pogo pin, and the pogo pin extends to the outside of the outer frame.
Preferably, the groove is filled with a first insulating protection glue.
Preferably, the height of the first insulating protection glue is lower than that of the first conductive sheet.
Preferably, the first conductive sheet and the second conductive sheet can also be molybdenum, copper, aluminum, gold, silver, copper-molybdenum alloy or copper-molybdenum-copper alloy.
A crimping type semiconductor module comprises the crimping type semiconductor sub-module, wherein a spring needle on the crimping type semiconductor sub-module is connected with a PCB, the PCB collects grids of a plurality of crimping type semiconductor sub-modules to a master grid, the master grid is connected with a grid terminal on a base, a tube cover is arranged on the base, the tube cover and the base form an accommodating cavity, and the crimping type semiconductor sub-module and the PCB are arranged in the accommodating cavity.
Preferably, the tube cover and/or the tube seat are/is provided with a boss for positioning the crimping type sub-module.
Preferably, the accommodating cavity is filled with a second insulating protection glue.
Preferably, the height of the second insulating protection glue is lower than that of the first conducting strip.
The invention has the advantages that the whole second conducting strip is provided with the plurality of semiconductor chips to form the crimping type sub-module structure of the integrated chip, thereby greatly simplifying the processing difficulty, effectively simplifying the internal space of the crimping type module and improving the utilization rate of the internal space of the crimping type module; meanwhile, the process flow is simplified, and the production difficulty is reduced; the stability and the reliability of the whole crimping type module are improved, and the failure risk on the physical layer of the internal structure is reduced.
Drawings
Fig. 1 is an exploded view of a compression-bonded semiconductor sub-module according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of the embodiment shown in FIG. 1;
FIG. 3 is a top view of the embodiment shown in FIG. 1;
FIG. 4 is a cross-sectional view taken along line A-A of FIG. 3;
FIG. 5 is a cross-sectional view taken along line C-C of FIG. 3;
fig. 6 is a schematic structural diagram of a compression-type semiconductor module according to an embodiment of the present invention;
fig. 7 is a cross-sectional view of the embodiment shown in fig. 6.
In the figure, 1, a semiconductor chip; 2. a first conductive sheet; 3. a second conductive sheet; 4. a pogo pin; 5. an outer frame; 51. a groove; 6. a first insulating protective adhesive; 7. a tube cover; 8. a tube holder; 9. a PCB; 10. a total gate; 11. a gate terminal; 12. a boss; 13. a second insulating protective adhesive; u1, press-fit type semiconductor sub-module.
Detailed Description
The technical scheme of the invention is further described in detail by combining the drawings and the specific embodiments:
referring to fig. 1-5, the press-fit semiconductor sub-module according to the present embodiment includes a second conductive sheet 3, the second conductive sheet 3 is connected to a plurality of semiconductor chips 1, each of the semiconductor chips 1 is connected to a first conductive sheet 2, the first conductive sheet 2 is connected to an emitter/source of the semiconductor chip 1, the second conductive sheet 3 is connected to a collector/drain of the semiconductor chip 1, the emitter/source and the collector/drain are respectively disposed on two opposite sides of the semiconductor chip 1, the second conductive sheet 3 is further provided with an outer frame 5, the outer frame 5 is provided with a plurality of grooves 51, and the semiconductor chip 1 is disposed in the grooves 51.
The plurality of semiconductor chips 1 are arranged on the whole second conducting strip 3 to form the crimping type sub-module structure U1 of the integrated chip, so that the processing precision requirement can be reduced, the processing difficulty is greatly simplified, the size and the weight of the sub-module are reduced, the internal space of the crimping type module is effectively simplified, and the utilization rate of the internal space of the crimping type module is improved; the process flow can be simplified, the production difficulty is reduced, the overall stability and reliability of the crimping type module are improved, and the failure risk on the physical layer of the internal structure is reduced.
More specifically, the semiconductor chip 1 is at least one of an IGBT chip, a MOSFET chip, an FRD chip, or an SBD chip, and in a sub-module formed by combining a plurality of chips, a multifunctional module can be implemented. The embodiment is four IGBT chips and two FRD chips, and the FRD chip can give the IGBT chip afterflow during the test IGBT chip, and both are each other and accompany the survey, and a test, test can all be accomplished to two kinds of chips, have improved efficiency of software testing.
More specifically, the semiconductor chip 1 is an IGBT chip, the gate of the IGBT chip is connected with a pogo pin 4, the pogo pin 4 extends to the outside of the outer frame 5, the pogo pin 4 can be built in the outer frame 5, and the gate of the IGBT chip is led out by pressure; or the spring pin 4 and the gate of the IGBT chip can be welded and then penetrate out of the positioning hole of the outer frame 5.
More specifically, the groove 51 is filled with the first insulating protection paste 6, and the outer frame 5 may be mounted by directly coating the first insulating protection paste 6 on the terminal voltage-resistant region on the semiconductor chip 1, or may be mounted on the terminal voltage-resistant region on the chip after coating the first insulating protection paste 6 under the outer frame 5.
After the assembly of the outer frame 5 is completed, the first insulating protective paste 6 fills up the gap between the outer frame 5 and the semiconductor chip 1 and plays a role in adhering the outer frame 5 and the semiconductor chip 1; in addition, in the gap between the outer frame 5 and the first conducting strip 2, insulating protection glue can be filled for the second insulating protection, and the height of the glue is lower than that of the upper surface of the first conducting strip 2.
More specifically, the height of the first insulating protection paste 6 is lower than that of the first conductive sheet 2.
More specifically, the first conductive sheet 2 and the second conductive sheet 3 may also be molybdenum, copper, aluminum, gold, silver, copper-molybdenum alloy, or copper-molybdenum-copper alloy.
Referring to fig. 6 and 7 together, the present embodiment provides a compression-type semiconductor module, including the compression-type semiconductor sub-module U1 according to any one of claims 1 to 6, wherein the pogo pins 4 on the compression-type semiconductor sub-module U1 are connected to a PCB9, the PCB9 collects gates of a plurality of compression-type semiconductor sub-modules U1 to a main gate 10, the main gate 10 is connected to a gate terminal 11 on a socket 8 by screw fastening, soldering or bonding, and the like, the socket 8 is provided with a cap 7, the cap 7 and the socket 8 form a receiving cavity, and the compression-type semiconductor sub-module U1 and the PCB9 are both disposed in the receiving cavity.
The plurality of semiconductor chips 1 are arranged on the whole second conducting strip 3 to form the crimping type sub-module structure U1 of the integrated chip, so that the requirement on processing precision can be reduced, the processing difficulty is greatly simplified, the internal space of the crimping type module is effectively simplified, and the utilization rate of the internal space of the crimping type module is improved; the process flow can be simplified, the production difficulty is reduced, the overall stability and reliability of the crimping type module are improved, and the failure risk on the physical layer of the internal structure is reduced.
More specifically, the tube cover 7 and/or the tube seat 8 are provided with bosses 12 for positioning the crimping type sub-module U1.
More specifically, the accommodating cavity is filled with a second insulating protection glue 13; all the crimping type sub-modules U1 are insulated and protected in the tube shell in a silica gel sealing mode.
More specifically, the tube shell is not pressurized when the insulating protective adhesive is filled and sealed, and the height of the second insulating protective adhesive 13 is lower than that of the first conducting strip 2.
More specifically, the first insulating protective paste 6 and the second insulating protective paste 13 are preferably silicon pastes.
The above examples are only for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A kind of crimping type semiconductor sub-module, characterized by that: the novel semiconductor chip packaging structure is characterized by comprising a second conducting strip (3), wherein the second conducting strip (3) is connected with a plurality of semiconductor chips (1), each semiconductor chip (1) is connected with a first conducting strip (2), the first conducting strip (2) is connected with an emitting electrode/source electrode of each semiconductor chip (1), the second conducting strip (3) is connected with a collecting electrode/drain electrode of each semiconductor chip (1), the emitting electrode/source electrode and the collecting electrode/drain electrode are respectively arranged on two opposite surfaces of each semiconductor chip (1), an outer frame (5) is further arranged on the second conducting strip (3), a plurality of grooves (51) are formed in the outer frame (5), and the semiconductor chips (1) are arranged in the grooves (51).
2. The compression-type semiconductor sub-module of claim 1, wherein: the semiconductor chip (1) is at least one of an IGBT chip, a MOSFET chip, an FRD chip or an SBD chip.
3. The compression-type semiconductor sub-module of claim 2, wherein: the semiconductor chip (1) is an IGBT chip, a grid electrode of the IGBT chip is connected with a spring needle (4), and the spring needle (4) extends to the outside of the outer frame (5).
4. The compression-bonded semiconductor sub-module according to any one of claims 1 to 3, wherein: and a first insulating protective adhesive (6) is filled in the groove (51).
5. The compression-type semiconductor sub-module of claim 4, wherein: the height of the first insulating protective glue (6) is lower than that of the first conducting strip (2).
6. The compression-bonded semiconductor sub-module of claim 1, 2, 3 or 5, wherein: the first conducting strip (2) and the second conducting strip (3) can also be molybdenum, copper, aluminum, gold, silver, copper-molybdenum alloy or copper-molybdenum-copper alloy.
7. A crimping type semiconductor module, characterized in that: the crimping type semiconductor sub-module (U1) comprises the crimping type semiconductor sub-module (U1) according to any one of claims 1-6, a PCB (9) is connected to the pogo pins (4) on the crimping type semiconductor sub-module (U1), the PCB (9) collects the grids of the plurality of crimping type semiconductor sub-modules (U1) to a total grid (10), the total grid (10) is connected with a grid terminal (11) on a tube seat (8), a tube cover (7) is arranged on the tube seat (8), a containing cavity is formed by the tube cover (7) and the tube seat (8), and the crimping type semiconductor sub-module (U1) and the PCB (9) are arranged in the containing cavity.
8. The press-fit semiconductor module according to claim 7, wherein: and the pipe cover (7) and/or the pipe seat (8) are/is provided with a boss (12) for positioning the crimping type sub-module (U1).
9. The press-fit semiconductor module according to claim 7 or 8, wherein: and a second insulating protection glue (13) is filled in the accommodating cavity.
10. The press-fit semiconductor module according to claim 9, wherein: the height of the second insulating protection glue (13) is lower than that of the first conducting strip (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011464686.1A CN114628375A (en) | 2020-12-14 | 2020-12-14 | Crimping type semiconductor sub-module and module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011464686.1A CN114628375A (en) | 2020-12-14 | 2020-12-14 | Crimping type semiconductor sub-module and module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114628375A true CN114628375A (en) | 2022-06-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011464686.1A Pending CN114628375A (en) | 2020-12-14 | 2020-12-14 | Crimping type semiconductor sub-module and module |
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| Country | Link |
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| CN (1) | CN114628375A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117238901A (en) * | 2023-11-16 | 2023-12-15 | 西安西电电力系统有限公司 | Crimping IGBT structure and power assembly |
-
2020
- 2020-12-14 CN CN202011464686.1A patent/CN114628375A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117238901A (en) * | 2023-11-16 | 2023-12-15 | 西安西电电力系统有限公司 | Crimping IGBT structure and power assembly |
| CN117238901B (en) * | 2023-11-16 | 2024-03-08 | 西安西电电力系统有限公司 | Crimping IGBT structure and power assembly |
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